Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906575
Ponnambalam Ravi Selvaganapathy, Mark A. Burns, D. T. Burke, C. H. Mastrangelo
This paper presents for the first time fabrication and initial measurements of an electrophoresis stage integrated with a novel inline electrochemical detection system. This detector system can be easily incorporated into plastic substrates and has less complex fabrication procedure compared to fluorescent detection systems. Potentiostatic and Open potential modes of detection are demonstrated. Techniques used to eliminate gas evolution at the detection electrodes and to reduce noise are discussed. Noise levels of 0.7 pA on a signal of 5 nA and drift in signal of 1.18 pA/s were measured for the potentiostatic mode of detection for the field and buffer concentration mentioned. Open potential mode had noise levels of 9.1 mV on a signal of 800 mV and a drift in signal of 0.22 mV/s. The potentiostatic mode was determined to be more stable based on the S/N ratios. Separation and detection of few biologically important compounds along with few electrochemical tags are demonstrated. Detection limits of 14.5 amol were measured for the potentiostatic mode of detection.
{"title":"Inline electrochemical detection for capillary electrophoresis","authors":"Ponnambalam Ravi Selvaganapathy, Mark A. Burns, D. T. Burke, C. H. Mastrangelo","doi":"10.1109/MEMSYS.2001.906575","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906575","url":null,"abstract":"This paper presents for the first time fabrication and initial measurements of an electrophoresis stage integrated with a novel inline electrochemical detection system. This detector system can be easily incorporated into plastic substrates and has less complex fabrication procedure compared to fluorescent detection systems. Potentiostatic and Open potential modes of detection are demonstrated. Techniques used to eliminate gas evolution at the detection electrodes and to reduce noise are discussed. Noise levels of 0.7 pA on a signal of 5 nA and drift in signal of 1.18 pA/s were measured for the potentiostatic mode of detection for the field and buffer concentration mentioned. Open potential mode had noise levels of 9.1 mV on a signal of 800 mV and a drift in signal of 0.22 mV/s. The potentiostatic mode was determined to be more stable based on the S/N ratios. Separation and detection of few biologically important compounds along with few electrochemical tags are demonstrated. Detection limits of 14.5 amol were measured for the potentiostatic mode of detection.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115212504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906504
S. Billat, H. Glosch, M. Kunze, F. Hedrich, J. Frech, J. Auber, W. Lang, H. Sandmaier, W. Wimmer
This paper presents a novel inclinometer operating with the free-convection heat transfer principle which has been developed at the HSG-IMIT for the VOGT electronic company. The use of SOI-technology permits a short technological process for the sensor fabrication and a very good mechanical stability like a high reproducibility. Using free convection properties the sensor presents a high resolution (0.007/spl deg/), a great sensitivity and baseline stability.
{"title":"Convection-based micromachined inclinometer using SOI technology","authors":"S. Billat, H. Glosch, M. Kunze, F. Hedrich, J. Frech, J. Auber, W. Lang, H. Sandmaier, W. Wimmer","doi":"10.1109/MEMSYS.2001.906504","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906504","url":null,"abstract":"This paper presents a novel inclinometer operating with the free-convection heat transfer principle which has been developed at the HSG-IMIT for the VOGT electronic company. The use of SOI-technology permits a short technological process for the sensor fabrication and a very good mechanical stability like a high reproducibility. Using free convection properties the sensor presents a high resolution (0.007/spl deg/), a great sensitivity and baseline stability.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"43 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124548006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906570
Tza-Huei Wang, S. Masset, Chih-Ming Ho
Using molecular beacons (MB) as highly sensitive and selective nucleic acid probes, we eliminate two of the major but cumbersome steps, probe immobilization and washing, of gene-based biosensors. By integrating sidewall mirrors with microchannels, we can increase the signal-to-noise ratio of the optical detection. The detection specificity is achieved using a MB based DNA hybridization technique. Molecular beacons become fluorescent only upon hybridization with target DNA/RNA molecules as the quencher is separated from the fluorophore. We can hence eliminate washing and immobilization steps and establish the inchannel detection technique. This technique reduces the detection volume to 36 pL. Microchannels coated with metal films with high reflectance are used to increase the signal level in the Laser Induced Fluorescence (LIF) system. By using the side-mirror channel with inchannel sensing technique, the detection limit is 0.07 zmol which is at least 3 orders of magnitude lower than many other DNA detection schemes.
{"title":"A zepto mole DNA micro sensor","authors":"Tza-Huei Wang, S. Masset, Chih-Ming Ho","doi":"10.1109/MEMSYS.2001.906570","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906570","url":null,"abstract":"Using molecular beacons (MB) as highly sensitive and selective nucleic acid probes, we eliminate two of the major but cumbersome steps, probe immobilization and washing, of gene-based biosensors. By integrating sidewall mirrors with microchannels, we can increase the signal-to-noise ratio of the optical detection. The detection specificity is achieved using a MB based DNA hybridization technique. Molecular beacons become fluorescent only upon hybridization with target DNA/RNA molecules as the quencher is separated from the fluorophore. We can hence eliminate washing and immobilization steps and establish the inchannel detection technique. This technique reduces the detection volume to 36 pL. Microchannels coated with metal films with high reflectance are used to increase the signal level in the Laser Induced Fluorescence (LIF) system. By using the side-mirror channel with inchannel sensing technique, the detection limit is 0.07 zmol which is at least 3 orders of magnitude lower than many other DNA detection schemes.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126378425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906531
T. Leichlé, M. von Arx, M. Allen
A micromachined magnetic field sensor has been designed, fabricated and tested. Its principle of operation is based on the change of resonant frequency of a magnetically sensitive micromechanical resonator as a function of applied external magnetic field. Magnetic sensitivity is achieved by incorporating magnetically soft (permeable) or hard (permanent magnet) materials into the resonator structure. The fabrication of these devices is based on electroplating through sacrificial molds and is completely CMOS-compatible. The functionality of the device has been demonstrated as both an intensity sensor and an angular sensor (i.e., compass). The intensity sensor demonstrated a sensitivity of 20 Oersted in magnetic field intensity, while the angular sensor demonstrated a resolution of approximately 20 degrees. Performance improvements are expected upon integration of these devices with appropriate circuitry.
{"title":"A micromachined resonant magnetic field sensor","authors":"T. Leichlé, M. von Arx, M. Allen","doi":"10.1109/MEMSYS.2001.906531","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906531","url":null,"abstract":"A micromachined magnetic field sensor has been designed, fabricated and tested. Its principle of operation is based on the change of resonant frequency of a magnetically sensitive micromechanical resonator as a function of applied external magnetic field. Magnetic sensitivity is achieved by incorporating magnetically soft (permeable) or hard (permanent magnet) materials into the resonator structure. The fabrication of these devices is based on electroplating through sacrificial molds and is completely CMOS-compatible. The functionality of the device has been demonstrated as both an intensity sensor and an angular sensor (i.e., compass). The intensity sensor demonstrated a sensitivity of 20 Oersted in magnetic field intensity, while the angular sensor demonstrated a resolution of approximately 20 degrees. Performance improvements are expected upon integration of these devices with appropriate circuitry.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126573517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906596
K. Hosokawa, R. Maeda
In this paper, a rapid and low-cost fabrication technology for high-density microvalve arrays is presented. For proof of the concept, a pneumatically-actuated three-way microvalve system composed of three independent one-way valve units was fabricated and tested. Each valve unit has a membrane, which is actuated by external negative air pressure. Intervals between the valve units are smaller than 780 /spl mu/m. These small intervals have been realized by providing the system with a layer of microchannels to conduct the air pressure to the valve units. All the parts were made of inexpensive silicone elastomer - polydimethylsiloxane (PDMS) - and rapidly fabricated with molding and spin-coating. A newly developed technique for wafer level transfer of a PDMS membrane has been proven to be effective. Flow characteristics of the microvalve system for water are presented. The microvalve works in an on-off manner with hysteresis. No leakage has been observed in the closed state. In the open state, measured flow resistances (pressure drops) are within the range of 1.65-2.29 kPa/(/spl mu/L/min).
{"title":"Low-cost technology for high-density microvalve arrays using polydimethylsiloxane (PDMS)","authors":"K. Hosokawa, R. Maeda","doi":"10.1109/MEMSYS.2001.906596","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906596","url":null,"abstract":"In this paper, a rapid and low-cost fabrication technology for high-density microvalve arrays is presented. For proof of the concept, a pneumatically-actuated three-way microvalve system composed of three independent one-way valve units was fabricated and tested. Each valve unit has a membrane, which is actuated by external negative air pressure. Intervals between the valve units are smaller than 780 /spl mu/m. These small intervals have been realized by providing the system with a layer of microchannels to conduct the air pressure to the valve units. All the parts were made of inexpensive silicone elastomer - polydimethylsiloxane (PDMS) - and rapidly fabricated with molding and spin-coating. A newly developed technique for wafer level transfer of a PDMS membrane has been proven to be effective. Flow characteristics of the microvalve system for water are presented. The microvalve works in an on-off manner with hysteresis. No leakage has been observed in the closed state. In the open state, measured flow resistances (pressure drops) are within the range of 1.65-2.29 kPa/(/spl mu/L/min).","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125479233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906539
T. Toriyama, Y. Tanimoto, Susumu Sugiyama
In order to confirm ability of silicon nano wire piezoresistors as sensing element of mechanical sensors, current-voltage (I-V) characteristics and the piezoresistive effect were investigated. Electron beam (EB) direct writing and RIE were used for fabrication. Fabricated polycrystalline Si (poly-Si) nano wire piezoresistors have triangular or trapezoid cross sections. The minimum width is 53 nm and thickness is 32 nm. A remarkable phenomenon was observed. The longitudinal piezoresistive coefficient /spl pi//sub l/ of the nano wire piezoresistor increased with a decrease in the cross section area, while the transverse piezoresistive coefficient /spl pi//sub t/ was approximately zero and invariant despite variation of the cross section area. The maximum value of /spl pi//sub l/ was 22/spl times/10/sup -5/ (1/MPa) at impurity concentration N=5/spl times/10/sup 19/ (cm/sup -3/).
{"title":"Characteristics of silicon nano wire as piezoresistor for nano electro mechanical systems","authors":"T. Toriyama, Y. Tanimoto, Susumu Sugiyama","doi":"10.1109/MEMSYS.2001.906539","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906539","url":null,"abstract":"In order to confirm ability of silicon nano wire piezoresistors as sensing element of mechanical sensors, current-voltage (I-V) characteristics and the piezoresistive effect were investigated. Electron beam (EB) direct writing and RIE were used for fabrication. Fabricated polycrystalline Si (poly-Si) nano wire piezoresistors have triangular or trapezoid cross sections. The minimum width is 53 nm and thickness is 32 nm. A remarkable phenomenon was observed. The longitudinal piezoresistive coefficient /spl pi//sub l/ of the nano wire piezoresistor increased with a decrease in the cross section area, while the transverse piezoresistive coefficient /spl pi//sub t/ was approximately zero and invariant despite variation of the cross section area. The maximum value of /spl pi//sub l/ was 22/spl times/10/sup -5/ (1/MPa) at impurity concentration N=5/spl times/10/sup 19/ (cm/sup -3/).","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128010167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906595
P. Cousseau, R. Hirschi, B. Frehner, S. Gamper, D. Maillefer
The paper reports on the design, manufacturing, and experimental testing of a micromachined pressure compensating flow regulator. This device was designed to provide a constant liquid flow rate of 1 ml/hr within a pressure difference of 100 to 600 mbar. At pressures higher than 600 mbar the device is designed to block the flow, preventing an over-delivery of medicine. Structural and fluidic simulations were used to design the geometry of the device before manufacturing. After devices have been characterized experimental results demonstrate the credibility of the design, the accuracy of the flow rate and the long-term stability of the device. One application of this device is the replacement of the flow restrictor in an elastomeric infusion system, which will increase the accuracy and safety of the drug delivery system. This pressure compensating flow regulator is passive, hence it needs no external energy source. The device is relatively inexpensive to manufacture and is therefore, potentially a disposable unit in a microfluidic system. Finally, it is small and lightweight, ideal for portable applications.
{"title":"Improved micro-flow regulator for drug delivery systems","authors":"P. Cousseau, R. Hirschi, B. Frehner, S. Gamper, D. Maillefer","doi":"10.1109/MEMSYS.2001.906595","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906595","url":null,"abstract":"The paper reports on the design, manufacturing, and experimental testing of a micromachined pressure compensating flow regulator. This device was designed to provide a constant liquid flow rate of 1 ml/hr within a pressure difference of 100 to 600 mbar. At pressures higher than 600 mbar the device is designed to block the flow, preventing an over-delivery of medicine. Structural and fluidic simulations were used to design the geometry of the device before manufacturing. After devices have been characterized experimental results demonstrate the credibility of the design, the accuracy of the flow rate and the long-term stability of the device. One application of this device is the replacement of the flow restrictor in an elastomeric infusion system, which will increase the accuracy and safety of the drug delivery system. This pressure compensating flow regulator is passive, hence it needs no external energy source. The device is relatively inexpensive to manufacture and is therefore, potentially a disposable unit in a microfluidic system. Finally, it is small and lightweight, ideal for portable applications.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131314277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906472
D. Lăpădatu, S. Habibi, B. Reppen, G. Salomonsen, T. Kvisterøy
This paper reports a dual-axes capacitive inclinometer/low-g accelerometer based on a novel feedback operation concept. The device consists of a sensor die and an ASIC, housed in a dual-in-line transfer moulded package for surface mounting. The sensor is fabricated by bulk micromachining of silicon and triple stack anodic bonding and is primarily an accelerometer sensitive to the Earth's gravitational field. Through the dedicated ASIC, the device can be programmed to operate either as a low-g accelerometer or as an inclinometer. The device is designed to have a programmable range up to /spl plusmn/2 g for the accelerometer and up to /spl plusmn/40/spl deg/ for the inclinometer, and a resolution of 0.61 mg and 0.1/spl deg/, respectively.
{"title":"Dual-axes capacitive inclinometer/low-g accelerometer for automotive applications","authors":"D. Lăpădatu, S. Habibi, B. Reppen, G. Salomonsen, T. Kvisterøy","doi":"10.1109/MEMSYS.2001.906472","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906472","url":null,"abstract":"This paper reports a dual-axes capacitive inclinometer/low-g accelerometer based on a novel feedback operation concept. The device consists of a sensor die and an ASIC, housed in a dual-in-line transfer moulded package for surface mounting. The sensor is fabricated by bulk micromachining of silicon and triple stack anodic bonding and is primarily an accelerometer sensitive to the Earth's gravitational field. Through the dedicated ASIC, the device can be programmed to operate either as a low-g accelerometer or as an inclinometer. The device is designed to have a programmable range up to /spl plusmn/2 g for the accelerometer and up to /spl plusmn/40/spl deg/ for the inclinometer, and a resolution of 0.61 mg and 0.1/spl deg/, respectively.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122199938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906509
N. Hedenstierna, S. Habibi, S. Nilsen, T. Kvisterøy, G. U. Jensen
The principle of the butterfly-gyro was first demonstrated with a large anisotropically etched structure in bulk silicon. Now the same principle has been used to develop a much smaller structure (9.6 mm/sup 2/). The new sensor chip is ICP-etched in bulk silicon and anodically bonded to form a triple stack (glass/Si/glass) structure. Together with an ASIC the sensor typically shows a noise level of 0.3 /sup o///sub s/ over 50 Hz bandwidth and a zero-rate offset (ZRO) less than 50 /sup o///sub s/.
{"title":"Bulk micromachined angular rate sensor based on the 'butterfly'-gyro structure","authors":"N. Hedenstierna, S. Habibi, S. Nilsen, T. Kvisterøy, G. U. Jensen","doi":"10.1109/MEMSYS.2001.906509","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906509","url":null,"abstract":"The principle of the butterfly-gyro was first demonstrated with a large anisotropically etched structure in bulk silicon. Now the same principle has been used to develop a much smaller structure (9.6 mm/sup 2/). The new sensor chip is ICP-etched in bulk silicon and anodically bonded to form a triple stack (glass/Si/glass) structure. Together with an ASIC the sensor typically shows a noise level of 0.3 /sup o///sub s/ over 50 Hz bandwidth and a zero-rate offset (ZRO) less than 50 /sup o///sub s/.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124086991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-01-21DOI: 10.1109/MEMSYS.2001.906487
O. Tabata, N. Matsuzuka, T. Yamaji, Hui You, J. Minakuchi, K. Yamamoto
Two methods, "Forward Approach" and "Inverse Approach", to fabricate complicated 3-dimensional microstructures by deep X-ray lithography have been developed. In the "Forward Approach", exposure energy distribution on a PMMA substrate was calculated using X-ray mask pattern and mask moving trajectories. Two different micro-nozzle patterns were fabricated to demonstrate the feasibility of this approach. From the comparison between prediction and experiment, a new phenomenon related to the long lifetime radicals was observed. As the "Inverse Approach", a method to determine the optimum mask moving trajectory using Fourier transformation was developed.
{"title":"Fabrication of 3-dimensional microstructures using moving mask deep X-ray lithography (M/sup 2/DXL)","authors":"O. Tabata, N. Matsuzuka, T. Yamaji, Hui You, J. Minakuchi, K. Yamamoto","doi":"10.1109/MEMSYS.2001.906487","DOIUrl":"https://doi.org/10.1109/MEMSYS.2001.906487","url":null,"abstract":"Two methods, \"Forward Approach\" and \"Inverse Approach\", to fabricate complicated 3-dimensional microstructures by deep X-ray lithography have been developed. In the \"Forward Approach\", exposure energy distribution on a PMMA substrate was calculated using X-ray mask pattern and mask moving trajectories. Two different micro-nozzle patterns were fabricated to demonstrate the feasibility of this approach. From the comparison between prediction and experiment, a new phenomenon related to the long lifetime radicals was observed. As the \"Inverse Approach\", a method to determine the optimum mask moving trajectory using Fourier transformation was developed.","PeriodicalId":311365,"journal":{"name":"Technical Digest. MEMS 2001. 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.01CH37090)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114743651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：