Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176最新文献
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659751
M. Emmenegger, S. Taschini, J. Korvink, H. Baltes
The physical dimensions of microsystems make the characteristic times of thermal and mechanical phenomena comparable. Thus, for the first time, we require the coupled analysis of this system. This paper tackles this challenge, presenting a general method to routinely investigate the frequency-domain behaviour of MEMS devices thermo-mechanically excited by an AC heating power. In particular, an application to a gas sensor is presented. For the device we can now correctly determine the amplitude/heating power ratio, given the air and structural damping model, together with the geometry and material description, Characteristics of the method are the use of finite elements for the space-discretization, and spectral analysis for the reduction of mechanical degrees of freedom.
{"title":"Simulation of a thermomechanically actuated gas sensor","authors":"M. Emmenegger, S. Taschini, J. Korvink, H. Baltes","doi":"10.1109/MEMSYS.1998.659751","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659751","url":null,"abstract":"The physical dimensions of microsystems make the characteristic times of thermal and mechanical phenomena comparable. Thus, for the first time, we require the coupled analysis of this system. This paper tackles this challenge, presenting a general method to routinely investigate the frequency-domain behaviour of MEMS devices thermo-mechanically excited by an AC heating power. In particular, an application to a gas sensor is presented. For the device we can now correctly determine the amplitude/heating power ratio, given the air and structural damping model, together with the geometry and material description, Characteristics of the method are the use of finite elements for the space-discretization, and spectral analysis for the reduction of mechanical degrees of freedom.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131615392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659820
C. Hierold, B. Clasbrumme, D. Behrend, T. Scheiter, M. Steger, K. Oppermann, H. Kapels, E. Landgraf, D. Wenzel, D. Etuodt
A new low power integrated pressure sensor system with digital output (1 bit PDM signal) for medical applications is presented. The absolute pressure sensor comprising 400 nm thick surface micromachined polysilicon membranes for capacitive pressure detection and a monolithic integrated 2/sup nd/ order sigma-delta-modulator including voltage reference and timing generator is extremely miniaturized on an area of approximately 3 mm/sup 2/. For protection and biocompatibility reasons the sensor is coated with a silicone elastomer of up to 100 /spl mu/m thickness, which does not influence the sensor's performance. The sensor system was tested in vitro in physiological NaCl solution, showing excellent results compared to a commercially available reference sensor. The sensor system is working well down to a supply voltage of 2.2 V at a power consumption of 0.5 mW. The resolution is better than 12 bit. Due to the small chip area, low power consumption and cost effective production process, the sensor is ideal for medical applications, e.g. in combination with telemetric power and data transmission as an implantable sensor to reduce the mortality risk of intensive care patients.
{"title":"Implantable low power integrated pressure sensor system for minimal invasive telemetric patient monitoring","authors":"C. Hierold, B. Clasbrumme, D. Behrend, T. Scheiter, M. Steger, K. Oppermann, H. Kapels, E. Landgraf, D. Wenzel, D. Etuodt","doi":"10.1109/MEMSYS.1998.659820","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659820","url":null,"abstract":"A new low power integrated pressure sensor system with digital output (1 bit PDM signal) for medical applications is presented. The absolute pressure sensor comprising 400 nm thick surface micromachined polysilicon membranes for capacitive pressure detection and a monolithic integrated 2/sup nd/ order sigma-delta-modulator including voltage reference and timing generator is extremely miniaturized on an area of approximately 3 mm/sup 2/. For protection and biocompatibility reasons the sensor is coated with a silicone elastomer of up to 100 /spl mu/m thickness, which does not influence the sensor's performance. The sensor system was tested in vitro in physiological NaCl solution, showing excellent results compared to a commercially available reference sensor. The sensor system is working well down to a supply voltage of 2.2 V at a power consumption of 0.5 mW. The resolution is better than 12 bit. Due to the small chip area, low power consumption and cost effective production process, the sensor is ideal for medical applications, e.g. in combination with telemetric power and data transmission as an implantable sensor to reduce the mortality risk of intensive care patients.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116640943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659779
Peter G. Hartwell, Fred Bertsch, S. A. Miller, Kimberly L. Turner, Noel C. MacDonald
A single-mask lateral tunneling accelerometer with integrated tip has been developed and characterized. High aspect ratio single-crystal silicon springs provide high resolution, wide operating bandwidth, and excellent isolation from off-axis stimuli. In this paper, we present the first such device implementing the SCREAM (1994) process technology. We focus on the advantages that this technology affords tunneling accelerometers and present a typical high-resolution accelerometer with 20 /spl mu/g/rt Hz performance at 100 Hz and 5.5 kHz resonant frequency.
{"title":"Single mask lateral tunneling accelerometer","authors":"Peter G. Hartwell, Fred Bertsch, S. A. Miller, Kimberly L. Turner, Noel C. MacDonald","doi":"10.1109/MEMSYS.1998.659779","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659779","url":null,"abstract":"A single-mask lateral tunneling accelerometer with integrated tip has been developed and characterized. High aspect ratio single-crystal silicon springs provide high resolution, wide operating bandwidth, and excellent isolation from off-axis stimuli. In this paper, we present the first such device implementing the SCREAM (1994) process technology. We focus on the advantages that this technology affords tunneling accelerometers and present a typical high-resolution accelerometer with 20 /spl mu/g/rt Hz performance at 100 Hz and 5.5 kHz resonant frequency.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127174892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659817
H. Kapels, T. Scheiter, C. Hierold, R. Aigner, J. Binder
The knowledge of the cavity pressure and the tightness of sealed surface micromachined membranes is essential for the description of their behavior and for the evaluation of their long-term stability. We are presenting a novel procedure to determine the cavity pressure and the tightness of sealed surface micromachined structures. The basic idea for cavity pressure determination is to compare two pressure-dependent resonance frequency measurements of a sealed and subsequently opened structure. The pressure dependent resonance frequency of the sealed structure depends on the clamping conditions, while the resonance frequency of the opened structure strongly depends on the compression of the gas-film between the plates. To characterize the structures with high accuracy a setup containing a temperature and pressure controlled chamber was installed. To equalize the ambient and the cavity pressure after the first characterization the sealed structures have to be opened by means of with an focused ion beam (FIB) and again measured pressure-dependent. An important application of the developed method is on-wafer process monitoring of surface micromachining processes.
{"title":"Cavity pressure determination and leakage testing for sealed surface micromachined membranes: a novel on-wafer test method","authors":"H. Kapels, T. Scheiter, C. Hierold, R. Aigner, J. Binder","doi":"10.1109/MEMSYS.1998.659817","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659817","url":null,"abstract":"The knowledge of the cavity pressure and the tightness of sealed surface micromachined membranes is essential for the description of their behavior and for the evaluation of their long-term stability. We are presenting a novel procedure to determine the cavity pressure and the tightness of sealed surface micromachined structures. The basic idea for cavity pressure determination is to compare two pressure-dependent resonance frequency measurements of a sealed and subsequently opened structure. The pressure dependent resonance frequency of the sealed structure depends on the clamping conditions, while the resonance frequency of the opened structure strongly depends on the compression of the gas-film between the plates. To characterize the structures with high accuracy a setup containing a temperature and pressure controlled chamber was installed. To equalize the ambient and the cavity pressure after the first characterization the sealed structures have to be opened by means of with an focused ion beam (FIB) and again measured pressure-dependent. An important application of the developed method is on-wafer process monitoring of surface micromachining processes.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123162345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659834
X. Jin, I. Ladabaum, B. Khuri-Yakub
Major steps used in fabricating surface micromachined capacitive ultrasonic immersion transducers are investigated. Such steps include membrane formation and cavity sealing under vacuum. Three transducer membrane structures are evaluated: a nitride membrane with an LTO sacrificial layer; a polysilicon membrane with an LTO sacrificial layer; and a nitride membrane with a polysilicon sacrificial layer. The major differences in the three processes are the conductivity, dielectric constant and residual stress of the membrane. Three vacuum sealing mechanisms are compared, each of which requires a different degree of lithographic sophistication, and results in a sealed cavity. Submicron via sealing requires sophisticated lithography, but is amenable to LPCVD nitride, LTO and other sealing procedures. Standard g-line lithography results in vias which seal only with high sticking coefficient species, such as LTO. A novel etch channel structure, which results in lateral sealing and requires neither sophisticated lithography nor a particular sealing is demonstrated. The experiments in the paper are guided by theoretical analysis and computer simulations when applicable. The optimized process based on a nitride membrane with a polysilicon sacrificial layer results in devices which have a broad band 50 /spl Omega/ real part impedance in the megahertz range. In addition, a transducer dynamic range in excess of 100 dB is achieved with an untuned bandwidth of 50%. The fabrication techniques and results herein reported indicate that surface micromachined capacitive ultrasonic transducers are an alternative to piezoelectric transducers in immersion applications.
{"title":"Surface micromachined capacitive ultrasonic immersion transducers","authors":"X. Jin, I. Ladabaum, B. Khuri-Yakub","doi":"10.1109/MEMSYS.1998.659834","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659834","url":null,"abstract":"Major steps used in fabricating surface micromachined capacitive ultrasonic immersion transducers are investigated. Such steps include membrane formation and cavity sealing under vacuum. Three transducer membrane structures are evaluated: a nitride membrane with an LTO sacrificial layer; a polysilicon membrane with an LTO sacrificial layer; and a nitride membrane with a polysilicon sacrificial layer. The major differences in the three processes are the conductivity, dielectric constant and residual stress of the membrane. Three vacuum sealing mechanisms are compared, each of which requires a different degree of lithographic sophistication, and results in a sealed cavity. Submicron via sealing requires sophisticated lithography, but is amenable to LPCVD nitride, LTO and other sealing procedures. Standard g-line lithography results in vias which seal only with high sticking coefficient species, such as LTO. A novel etch channel structure, which results in lateral sealing and requires neither sophisticated lithography nor a particular sealing is demonstrated. The experiments in the paper are guided by theoretical analysis and computer simulations when applicable. The optimized process based on a nitride membrane with a polysilicon sacrificial layer results in devices which have a broad band 50 /spl Omega/ real part impedance in the megahertz range. In addition, a transducer dynamic range in excess of 100 dB is achieved with an untuned bandwidth of 50%. The fabrication techniques and results herein reported indicate that surface micromachined capacitive ultrasonic transducers are an alternative to piezoelectric transducers in immersion applications.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114978178","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659731
E. Kalvesten, T. Corman, M. Huiku, K. Weckstrom, P. Merilainen, G. Stemme
For the first time a silicon IR-source and CO/sub 2/-chamber system for measurement of CO/sub 2/ concentration is presented. This new miniaturized infrared sensor is specially designed for the measurement of respiratory gases present in patient airways during anaesthesia or intensive care. The IR-sensor assembly consists of an IR-source chip with two pairs of diagonally arranged IR-sources for the generation of two switched "sample" and reference beams. The gas filter chip is arranged with two CO/sub 2/ chambers directly beneath the two reference sources. These chambers "pre-absorb" the reference beam at the CO/sub 2/ wavelength band around 4.26 /spl mu/m. The reference beam is needed for long term stability and for compensation against cuvette window contamination. The electrically modulated IR-sources consist of incandescent polysilicon filaments coated with silicon nitride across a 220 /spl mu/m deep cavity. The CO/sub 2/-chambers with a length of 1 mm are fabricated by silicon fusion and anodic bonding at a chosen CO/sub 2/ pressure for optimal filter characteristics. Test measurements of the infrared sensor system show high CO/sub 2/-sensitivity meaning that the stringent requirements for this respirator application can be reached.
{"title":"A silicon IR-source and CO/sub 2/-chamber for CO/sub 2/ measurements","authors":"E. Kalvesten, T. Corman, M. Huiku, K. Weckstrom, P. Merilainen, G. Stemme","doi":"10.1109/MEMSYS.1998.659731","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659731","url":null,"abstract":"For the first time a silicon IR-source and CO/sub 2/-chamber system for measurement of CO/sub 2/ concentration is presented. This new miniaturized infrared sensor is specially designed for the measurement of respiratory gases present in patient airways during anaesthesia or intensive care. The IR-sensor assembly consists of an IR-source chip with two pairs of diagonally arranged IR-sources for the generation of two switched \"sample\" and reference beams. The gas filter chip is arranged with two CO/sub 2/ chambers directly beneath the two reference sources. These chambers \"pre-absorb\" the reference beam at the CO/sub 2/ wavelength band around 4.26 /spl mu/m. The reference beam is needed for long term stability and for compensation against cuvette window contamination. The electrically modulated IR-sources consist of incandescent polysilicon filaments coated with silicon nitride across a 220 /spl mu/m deep cavity. The CO/sub 2/-chambers with a length of 1 mm are fabricated by silicon fusion and anodic bonding at a chosen CO/sub 2/ pressure for optimal filter characteristics. Test measurements of the infrared sensor system show high CO/sub 2/-sensitivity meaning that the stringent requirements for this respirator application can be reached.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114141600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659790
A. Schroth, C. Lee, S. Matsumoto, M. Tanaka, R. Maeda
Despite to promising material properties, only few applications of thin (up to 5 /spl mu/m) piezoelectric PZT layers for actuation purpose of MEMS exist. To investigate actuation properties and application problems, this paper introduces the design, fabrication and characterization of 1D and 2D micro scanners actuated by a sol-gel deposited PZT layer of 1.5 /spl mu/m thickness. For the manufactured samples, measurements are carried out. After determining the relative dielectric constant of the PZT layer to about 1000 and its piezoelectric constant d/sub 31/ to 20...45 10/sup -12/ C/N, scanning angles were measured. For the ID scanner, angles between 11/spl deg/ and 35/spl deg/ could be determined, and for the 2D scanning structure 6.5/spl deg/ and 2.5/spl deg/ were observed for 10 V/sub pp/ maximum stimulation AC voltage. Deformation of the beams caused by technologically induced strain was found to change the behavior of the actuators. It can both, either decrease the device performance by increase of the mechanical compliance of the beam, or improve the performance by changing sinusoidal oscillation into a buckling-determined "snapping".
{"title":"Application of sol-gel deposited thin PZT film for actuation of 1D and 2D scanners","authors":"A. Schroth, C. Lee, S. Matsumoto, M. Tanaka, R. Maeda","doi":"10.1109/MEMSYS.1998.659790","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659790","url":null,"abstract":"Despite to promising material properties, only few applications of thin (up to 5 /spl mu/m) piezoelectric PZT layers for actuation purpose of MEMS exist. To investigate actuation properties and application problems, this paper introduces the design, fabrication and characterization of 1D and 2D micro scanners actuated by a sol-gel deposited PZT layer of 1.5 /spl mu/m thickness. For the manufactured samples, measurements are carried out. After determining the relative dielectric constant of the PZT layer to about 1000 and its piezoelectric constant d/sub 31/ to 20...45 10/sup -12/ C/N, scanning angles were measured. For the ID scanner, angles between 11/spl deg/ and 35/spl deg/ could be determined, and for the 2D scanning structure 6.5/spl deg/ and 2.5/spl deg/ were observed for 10 V/sub pp/ maximum stimulation AC voltage. Deformation of the beams caused by technologically induced strain was found to change the behavior of the actuators. It can both, either decrease the device performance by increase of the mechanical compliance of the beam, or improve the performance by changing sinusoidal oscillation into a buckling-determined \"snapping\".","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133112579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659752
J. Schimkat
The design of a microrelay actuator has to be based on the characteristic data of the contact material used. These data were determined experimentally at Au, AuNi5 and Rh switching electric contacts. The samples were cleaned with good result using the "Schaltreinigung" procedure. A new precision measurement technique was developed that enables investigations of electric contacts at contact forces varying continuously in the range from 0.1 mN to more than 10 mN. It was found that AuNi5 and Rh are contact materials well suited for microrelays, whereas Au is not appropriate due to its high adherence. Stable contact and reliable opening are provided by forces altogether as low as 0.6 mN. The experimental data were used successfully in dimensioning the moving wedge actuator used in silicon microrelays.
{"title":"Contact materials for microrelays","authors":"J. Schimkat","doi":"10.1109/MEMSYS.1998.659752","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659752","url":null,"abstract":"The design of a microrelay actuator has to be based on the characteristic data of the contact material used. These data were determined experimentally at Au, AuNi5 and Rh switching electric contacts. The samples were cleaned with good result using the \"Schaltreinigung\" procedure. A new precision measurement technique was developed that enables investigations of electric contacts at contact forces varying continuously in the range from 0.1 mN to more than 10 mN. It was found that AuNi5 and Rh are contact materials well suited for microrelays, whereas Au is not appropriate due to its high adherence. Stable contact and reliable opening are provided by forces altogether as low as 0.6 mN. The experimental data were used successfully in dimensioning the moving wedge actuator used in silicon microrelays.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133217328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659750
N. Swart, S. Bart, M. Zaman, M. Mariappan, J. Gilbert, D. Murphy
We report on the development of a new CAD tool, AutoMM, which supports the automatic generation of dynamic macromodels for a broad class of MEMS devices. The tool is demonstrated by producing a 2 DOF macromodel of the Analog Devices ADXL76 airbag accelerometer. Considerably improved functionality is obtained over earlier models of the device, including prediction of cross-axis response. Excellent agreement is obtained between simulations and measured data.
{"title":"AutoMM: automatic generation of dynamic macromodels for MEMS devices","authors":"N. Swart, S. Bart, M. Zaman, M. Mariappan, J. Gilbert, D. Murphy","doi":"10.1109/MEMSYS.1998.659750","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659750","url":null,"abstract":"We report on the development of a new CAD tool, AutoMM, which supports the automatic generation of dynamic macromodels for a broad class of MEMS devices. The tool is demonstrated by producing a 2 DOF macromodel of the Analog Devices ADXL76 airbag accelerometer. Considerably improved functionality is obtained over earlier models of the device, including prediction of cross-axis response. Excellent agreement is obtained between simulations and measured data.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132048371","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659735
T. Ebefors, Edvard Kälvesten, G. Stemme
The first three dimensional (3D) flow sensor probe based on polyimide joints has been fabricated and successfully tested. The new 3D sensor, which is specially designed for turbulent gas flow measurements, is based on the anemometer principle, i.e. gas cooling of electrically heated hot-wires. The sensor probe consists of three perpendicular 500 /spl mu/m/spl times/5 /spl mu/m/spl times/2 /spl mu/m polysilicon hot-wires giving a measuring volume sufficiently small to resolve the small eddies in a turbulent flow. A bulk micromachining process in combination with sacrificial etching is used to form the hot-wire probes. The hot-wires are connected to 30 /spl mu/m thick bulk silicon beams which are defined by double sided KOH etching. Two wires (x and y) are located in the wafer plane and the third z-wire is rotated out of the plane using a new robust micro-joint. The self-assembly micro-joint with small bending radius is based on thermal shrinkage of polyimide in V-grooves. High flow sensitivity for the anemometric hot-wires has been measured. Time constants of 120 and 330 /spl mu/s were measured for the cooling and heating of the hot-wires, respectively.
{"title":"Three dimensional silicon triple-hot-wire anemometer based on polyimide joints","authors":"T. Ebefors, Edvard Kälvesten, G. Stemme","doi":"10.1109/MEMSYS.1998.659735","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659735","url":null,"abstract":"The first three dimensional (3D) flow sensor probe based on polyimide joints has been fabricated and successfully tested. The new 3D sensor, which is specially designed for turbulent gas flow measurements, is based on the anemometer principle, i.e. gas cooling of electrically heated hot-wires. The sensor probe consists of three perpendicular 500 /spl mu/m/spl times/5 /spl mu/m/spl times/2 /spl mu/m polysilicon hot-wires giving a measuring volume sufficiently small to resolve the small eddies in a turbulent flow. A bulk micromachining process in combination with sacrificial etching is used to form the hot-wire probes. The hot-wires are connected to 30 /spl mu/m thick bulk silicon beams which are defined by double sided KOH etching. Two wires (x and y) are located in the wafer plane and the third z-wire is rotated out of the plane using a new robust micro-joint. The self-assembly micro-joint with small bending radius is based on thermal shrinkage of polyimide in V-grooves. High flow sensitivity for the anemometric hot-wires has been measured. Time constants of 120 and 330 /spl mu/s were measured for the cooling and heating of the hot-wires, respectively.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128732561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176
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