Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176最新文献
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659778
B.J. Kim, T. Masuzawa, H. Fujita, A. Tominaga
A new measurement method to characterize inside profiles of microholes regardless of materials is described in this paper. In order to apply this method, the fabrication technique of a silicon-based micro twin-probe was developed, and the fabrication process is presented. A microhole with a diameter of around 125 /spl mu/m was actually measured using this method with micro twin-probe. Moreover, we succeeded in the fabrication of advanced long micro twin-probes with considering distribution of the residual stress, and investigated the mechanical characteristics of the probes. The thickness of the probes is 20 /spl mu/m and the length is 1000 /spl mu/m. To improve the measurement precision, we designed a new holder of a micro twin-probe and we evaluated the measurement reliability using the silicon-based long micro twin-probe. The estimated precision of measurement on this setup is smaller than 0.5 /spl mu/m. The probes are designed so as to realize a higher resonant frequency than the driving frequency in measurement. The actual resonant frequency was measured by the laser Doppler instrument. A predicted resonant frequency is in good agreement with the experimental value. These results demonstrate that the micro twin-probe is evidently suitable for the measurement of inner surfaces of microholes.
{"title":"Dimensional measurement of microholes with silicon-based micro twin probes","authors":"B.J. Kim, T. Masuzawa, H. Fujita, A. Tominaga","doi":"10.1109/MEMSYS.1998.659778","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659778","url":null,"abstract":"A new measurement method to characterize inside profiles of microholes regardless of materials is described in this paper. In order to apply this method, the fabrication technique of a silicon-based micro twin-probe was developed, and the fabrication process is presented. A microhole with a diameter of around 125 /spl mu/m was actually measured using this method with micro twin-probe. Moreover, we succeeded in the fabrication of advanced long micro twin-probes with considering distribution of the residual stress, and investigated the mechanical characteristics of the probes. The thickness of the probes is 20 /spl mu/m and the length is 1000 /spl mu/m. To improve the measurement precision, we designed a new holder of a micro twin-probe and we evaluated the measurement reliability using the silicon-based long micro twin-probe. The estimated precision of measurement on this setup is smaller than 0.5 /spl mu/m. The probes are designed so as to realize a higher resonant frequency than the driving frequency in measurement. The actual resonant frequency was measured by the laser Doppler instrument. A predicted resonant frequency is in good agreement with the experimental value. These results demonstrate that the micro twin-probe is evidently suitable for the measurement of inner surfaces of microholes.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130263872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659827
H. Nakanishi, T. Nishimoto, R. Nakamura, A. Yotsumoto, S. Shoji
Studies on SiO/sub 2/-SiO/sub 2/ bonding with hydrofluoric acid (HF) are described. This method has a remarkable feature that bonding can be obtained at room temperature. Advantages of this method are low thermal damage, low residual stress and simplicity of the bonding process, which are expected for the packaging and assembly of MEMS. The bond characteristics were measured under different bonding conditions of HF concentration, pressure, chemicals and so on. The bond strength depends on the applied pressure during bonding. HF concentration can be reduced to 0.1%. The bonding is also observed using KOH solution instead of HF. TEM, SIMS, RI and EPMA were applied to evaluate the bonded interface. From the TEM results, an interlayer is formed between SiO/sub 2/-SiO/sub 2/. The thickness of the interlayer depends strongly on the applied pressure during bonding. The SIMS results showed that hydrogen and fluorine partially exist in the interlayer. Considering the result of the RI analysis, surplus HF solution is squeezed out from the interface as the bonding progress. From these results, both surfaces of the SiO/sub 2/ are solved by HF and an interlayer, which is a binding layer, is formed. Formation of the interlayer plays a very important role for the characteristics of HF-bonding.
{"title":"Studies on SiO/sub 2/-SiO/sub 2/ bonding with hydrofluoric acid-room temperature and low stress bonding technique for MEMS","authors":"H. Nakanishi, T. Nishimoto, R. Nakamura, A. Yotsumoto, S. Shoji","doi":"10.1109/MEMSYS.1998.659827","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659827","url":null,"abstract":"Studies on SiO/sub 2/-SiO/sub 2/ bonding with hydrofluoric acid (HF) are described. This method has a remarkable feature that bonding can be obtained at room temperature. Advantages of this method are low thermal damage, low residual stress and simplicity of the bonding process, which are expected for the packaging and assembly of MEMS. The bond characteristics were measured under different bonding conditions of HF concentration, pressure, chemicals and so on. The bond strength depends on the applied pressure during bonding. HF concentration can be reduced to 0.1%. The bonding is also observed using KOH solution instead of HF. TEM, SIMS, RI and EPMA were applied to evaluate the bonded interface. From the TEM results, an interlayer is formed between SiO/sub 2/-SiO/sub 2/. The thickness of the interlayer depends strongly on the applied pressure during bonding. The SIMS results showed that hydrogen and fluorine partially exist in the interlayer. Considering the result of the RI analysis, surplus HF solution is squeezed out from the interface as the bonding progress. From these results, both surfaces of the SiO/sub 2/ are solved by HF and an interlayer, which is a binding layer, is formed. Formation of the interlayer plays a very important role for the characteristics of HF-bonding.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121128190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659730
S. Kamisuki, T. Hagata, C. Tezuka, Y. Nose, M. Fujii, M. Atobe
Si-micromachined electrostatically actuated inkjet head has been developed for the electric calculator printer. It is the first commercial device of this kind. The electrostatic actuator comprises a Si pressure plate and a corresponding transparent ITO electrode which is parallel to the pressure plate, they are assembled to keep the air gap between them within 0.2/spl plusmn/0.015 /spl mu/m. The driving voltage is 38 V and a driving frequency is up to 3 kHz. The inkjet head have achieved the uniform ink ejection. The weight of an ink drop is kept more than 0.12 /spl mu/g under the condition of the frequency range up to 3 kHz and the temperature range of 10 to 40/spl deg/C; this satisfies one of the most critical head specifications. The calculated average current consumption is only 50 /spl mu/A/nozzle. Because of the full-batch fabrication and the electrostatic actuation, the inkjet head is low power, thin and small.
{"title":"A low power, small, electrostatically-driven commercial inkjet head","authors":"S. Kamisuki, T. Hagata, C. Tezuka, Y. Nose, M. Fujii, M. Atobe","doi":"10.1109/MEMSYS.1998.659730","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659730","url":null,"abstract":"Si-micromachined electrostatically actuated inkjet head has been developed for the electric calculator printer. It is the first commercial device of this kind. The electrostatic actuator comprises a Si pressure plate and a corresponding transparent ITO electrode which is parallel to the pressure plate, they are assembled to keep the air gap between them within 0.2/spl plusmn/0.015 /spl mu/m. The driving voltage is 38 V and a driving frequency is up to 3 kHz. The inkjet head have achieved the uniform ink ejection. The weight of an ink drop is kept more than 0.12 /spl mu/g under the condition of the frequency range up to 3 kHz and the temperature range of 10 to 40/spl deg/C; this satisfies one of the most critical head specifications. The calculated average current consumption is only 50 /spl mu/A/nozzle. Because of the full-batch fabrication and the electrostatic actuation, the inkjet head is low power, thin and small.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124106951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659819
J. Bienstman, R. Puers, J. Vandewalle
This paper describes the resonance characteristics of the autonomous impact resonator, a self resonating silicon resonator consisting only of a capacitive microbridge, a resistor and a d.c.-source. Since the oscillation is based on large vibrational amplitudes and on non-linear effects, the autonomous impact oscillator exhibits periodic as well as chaotic behaviour. An electromechanical model and a general mathematical description is given. The model is experimentally verified and the results are compared with simulations. The experimental results address the influence of the d.c.-voltage, the effect of the charging and discharging resistors, the influence of air damping and of the parasitic capacitance.
{"title":"Periodic and chaotic behaviour of the autonomous impact resonator","authors":"J. Bienstman, R. Puers, J. Vandewalle","doi":"10.1109/MEMSYS.1998.659819","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659819","url":null,"abstract":"This paper describes the resonance characteristics of the autonomous impact resonator, a self resonating silicon resonator consisting only of a capacitive microbridge, a resistor and a d.c.-source. Since the oscillation is based on large vibrational amplitudes and on non-linear effects, the autonomous impact oscillator exhibits periodic as well as chaotic behaviour. An electromechanical model and a general mathematical description is given. The model is experimentally verified and the results are compared with simulations. The experimental results address the influence of the d.c.-voltage, the effect of the charging and discharging resistors, the influence of air damping and of the parasitic capacitance.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122373752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659812
S. Iijima
In his book published in 1985 Drexler proposed a molecular bearing consisting of two graphitic nanotubes of different diameter which are concentrically arranged (1992). It was a virtual operation inside a computer. This dream, however, has become more realistic by the discovery of carbon nanotubes by the author (1991). The discovery, unique atomic structures, production, growth, expected properties and some experiments on carbon nanotubes are reviewed.
{"title":"Carbon nanotubes and their recent developments","authors":"S. Iijima","doi":"10.1109/MEMSYS.1998.659812","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659812","url":null,"abstract":"In his book published in 1985 Drexler proposed a molecular bearing consisting of two graphitic nanotubes of different diameter which are concentrically arranged (1992). It was a virtual operation inside a computer. This dream, however, has become more realistic by the discovery of carbon nanotubes by the author (1991). The discovery, unique atomic structures, production, growth, expected properties and some experiments on carbon nanotubes are reviewed.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"286 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131660447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659759
O. Tabata
A new approach to control the characteristics of TMAH silicon anisotropic etchant is proposed. The effects of potassium ions on TMAH etching characteristics at a concentration of 20 wt.% and temperature of 80/spl deg/C were investigated. A K/sub 2/CO/sub 3/ additive to the TMAH was used as a potassium ion source. The SiO/sub 2/ etching rate increased with increasing the amount of added K/sub 2/CO/sub 3/. Anisotropic etching characteristics were measured using a wagon wheel pattern. It was observed that the etched wagon wheel pattern changed with increasing the amount of added K/sub 2/CO/sub 3/. This change was caused by a decrease in the etching rate in the silicon <014> direction. From these results, it is concluded that important characteristics of silicon anisotropic etching, such as selectivity to silicon dioxide and anisotropy, can be controlled by adding potassium ions to TMAH solution.
{"title":"Anisotropy and selectivity control of TMAH","authors":"O. Tabata","doi":"10.1109/MEMSYS.1998.659759","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659759","url":null,"abstract":"A new approach to control the characteristics of TMAH silicon anisotropic etchant is proposed. The effects of potassium ions on TMAH etching characteristics at a concentration of 20 wt.% and temperature of 80/spl deg/C were investigated. A K/sub 2/CO/sub 3/ additive to the TMAH was used as a potassium ion source. The SiO/sub 2/ etching rate increased with increasing the amount of added K/sub 2/CO/sub 3/. Anisotropic etching characteristics were measured using a wagon wheel pattern. It was observed that the etched wagon wheel pattern changed with increasing the amount of added K/sub 2/CO/sub 3/. This change was caused by a decrease in the etching rate in the silicon <014> direction. From these results, it is concluded that important characteristics of silicon anisotropic etching, such as selectivity to silicon dioxide and anisotropy, can be controlled by adding potassium ions to TMAH solution.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131946176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659796
K.-P. Kamper, J. Dopper, W. Ehrfeld, S. Oberbeck
We present a new membrane micropump fabricated by micro mold injection and laser based techniques. Due to an innovative pump design featuring an extremely small internal volume and a large compression ratio the pumps are the first micropumps to combine outstanding technical performance with a really easy handling. The pumps work equally well with gases and liquids and exhibit a very reliable self-filling behavior with liquids. Pumping water we have achieved maximum pump rates of 400 /spl mu/l/min and a maximum back pressure of 2100 hPa. Using air the pumps can build up pressures of up to 500 hPa and generate a maximum flow rate of 3.5 ml/min. The maximum vacuum the pumps can create amounts to 350 hPa. Due to the use of replication based fabrication techniques and optimized assembly methods, the pump design has the potential for production costs on the order of 5 DM. The new micropump is being manufactured in a small series production and is available for industrial evaluation.
{"title":"A self-filling low-cost membrane micropump","authors":"K.-P. Kamper, J. Dopper, W. Ehrfeld, S. Oberbeck","doi":"10.1109/MEMSYS.1998.659796","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659796","url":null,"abstract":"We present a new membrane micropump fabricated by micro mold injection and laser based techniques. Due to an innovative pump design featuring an extremely small internal volume and a large compression ratio the pumps are the first micropumps to combine outstanding technical performance with a really easy handling. The pumps work equally well with gases and liquids and exhibit a very reliable self-filling behavior with liquids. Pumping water we have achieved maximum pump rates of 400 /spl mu/l/min and a maximum back pressure of 2100 hPa. Using air the pumps can build up pressures of up to 500 hPa and generate a maximum flow rate of 3.5 ml/min. The maximum vacuum the pumps can create amounts to 350 hPa. Due to the use of replication based fabrication techniques and optimized assembly methods, the pump design has the potential for production costs on the order of 5 DM. The new micropump is being manufactured in a small series production and is available for industrial evaluation.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116785492","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659804
F. Chollet, M. de Labachelerie, H. Fujital
Microelectromechanical systems (MEMS) seem able to yield low-cost solution for the telecommunications. An exciting application concerns the study of a commutation matrix which needs a large number of 2/spl times/2 coupler and presumably attenuators to decrease the cross-talk. This paper reports the design and the realization of a bending waveguide used as an optical attenuator and an optical switch. Both devices are based on spatially induced evanescent field interaction, either between two waveguides or between one waveguide and a lossy medium. First, we present the simulations used for the design with expected performances. Then we report the main points of the technological process based on silicon micromachining. Eventually, optical results are presented with the operation of the device as a polarization insensitive attenuator. This later results definitely establishes the feasibility of an optical coupler actuated mechanically.
{"title":"Electromechanically actuated evanescent optical switch and polarization independent attenuator","authors":"F. Chollet, M. de Labachelerie, H. Fujital","doi":"10.1109/MEMSYS.1998.659804","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659804","url":null,"abstract":"Microelectromechanical systems (MEMS) seem able to yield low-cost solution for the telecommunications. An exciting application concerns the study of a commutation matrix which needs a large number of 2/spl times/2 coupler and presumably attenuators to decrease the cross-talk. This paper reports the design and the realization of a bending waveguide used as an optical attenuator and an optical switch. Both devices are based on spatially induced evanescent field interaction, either between two waveguides or between one waveguide and a lossy medium. First, we present the simulations used for the design with expected performances. Then we report the main points of the technological process based on silicon micromachining. Eventually, optical results are presented with the operation of the device as a polarization insensitive attenuator. This later results definitely establishes the feasibility of an optical coupler actuated mechanically.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125301229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659764
Y. Gianchandani, H. Kim, M. Shinn, B. Lee, K. Najafi, C. Song
A MEMS-first fabrication process for integrating CMOS circuits with polysilicon micromechanical structures is described in detail. The overall process uses 17 masks to integrate a 1-metal, 2-poly, p-well based LOGOS CMOS process with a 3-poly sequence for microstructures. The microstructures are formed within recesses on the surface of silicon wafers such that their uppermost surfaces are coplanar with the remainder of the substrate. No special planarization technique, such as chemical-mechanical polishing (GMP), is used in the effort described here. Special aspects of the process include provisions to improve lithography within the recesses, to protect the microstructures during the circuit fabrication, and implement an effective lead transfer between the microstructures and the on-chip circuitry. The process is validated using a test vehicle that includes accelerometers and gyroscopes interfaced with voltage followers and switched-capacitor charge amplifiers. Measured transistor parameters match those obtained in standard CMOS.
{"title":"A MEMS-first fabrication process for integrating CMOS circuits with polysilicon microstructures","authors":"Y. Gianchandani, H. Kim, M. Shinn, B. Lee, K. Najafi, C. Song","doi":"10.1109/MEMSYS.1998.659764","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659764","url":null,"abstract":"A MEMS-first fabrication process for integrating CMOS circuits with polysilicon micromechanical structures is described in detail. The overall process uses 17 masks to integrate a 1-metal, 2-poly, p-well based LOGOS CMOS process with a 3-poly sequence for microstructures. The microstructures are formed within recesses on the surface of silicon wafers such that their uppermost surfaces are coplanar with the remainder of the substrate. No special planarization technique, such as chemical-mechanical polishing (GMP), is used in the effort described here. Special aspects of the process include provisions to improve lithography within the recesses, to protect the microstructures during the circuit fabrication, and implement an effective lead transfer between the microstructures and the on-chip circuitry. The process is validated using a test vehicle that includes accelerometers and gyroscopes interfaced with voltage followers and switched-capacitor charge amplifiers. Measured transistor parameters match those obtained in standard CMOS.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128068749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659811
H. Trieu, L. Ewe, W. Mokwa, M. Schwarz, B. Hosticka
Worldwide there are some different approaches toward the development of a retina implant as a visual prosthesis for people suffering from retinitis pigmentosa (RP). In this work we present an epiretinal implant system with the emphasis on the retina stimulator which differs significantly from other approaches by using flexible single-crystal silicon. This substrate provides on the one hand the flexibility required by the implant to adapt the retina shape. On the other hand it enables us to integrate complex circuitry monolithically on the stimulator chip. Especially circuitry for a bus system can be placed in the immediate vicinity of the stimulating microelectrode array ensuring the possibility of increasing the number of microelectrodes. The CMOS-compatible fabrication process consists of a combination of wet chemical anisotropic etching producing an silicon mesa array and plasma etching forming the flexible crosspieces between those 'silicon islands'. The testing results of the fabricated flexible silicon structures are presented and discussed in this paper.
{"title":"Flexible silicon structures for a retina implant","authors":"H. Trieu, L. Ewe, W. Mokwa, M. Schwarz, B. Hosticka","doi":"10.1109/MEMSYS.1998.659811","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659811","url":null,"abstract":"Worldwide there are some different approaches toward the development of a retina implant as a visual prosthesis for people suffering from retinitis pigmentosa (RP). In this work we present an epiretinal implant system with the emphasis on the retina stimulator which differs significantly from other approaches by using flexible single-crystal silicon. This substrate provides on the one hand the flexibility required by the implant to adapt the retina shape. On the other hand it enables us to integrate complex circuitry monolithically on the stimulator chip. Especially circuitry for a bus system can be placed in the immediate vicinity of the stimulating microelectrode array ensuring the possibility of increasing the number of microelectrodes. The CMOS-compatible fabrication process consists of a combination of wet chemical anisotropic etching producing an silicon mesa array and plasma etching forming the flexible crosspieces between those 'silicon islands'. The testing results of the fabricated flexible silicon structures are presented and discussed in this paper.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125036832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176
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