Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176最新文献
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659773
H. Beutel, T. Stieglitz, J. Meyer
This paper describes a new interconnection wire method which allows versatile multiple strand connections between microsensors: sensor arrays and integrated circuits (IC). The interconnection method is termed Micro Flex Interconnects (MFI). One example for this technology is the connection of implantable, highly flexible neural micro devices to electronics for interfacing to the external world. The interconnection technique is based on a novel multilayer process using polyimide (Du Pont PI 2611). The thickness of the polyimide structure ranges from 5 to 15 /spl mu/m including the insulation layers. Several metallization layers can be embedded in the material. This approach exhibits same advantages. The involved material is non-toxic and the ICs do not need any additional bond pad metallization. The MFI technique has been proven long-term stable. The metallization material can be chosen accordingly for electrodes, conducting lines, and connection pads. An commercial ball wedge bonder is the only equipment needed to perform the MFI method.
{"title":"Microflex: a new technique for hybrid integration for microsystems","authors":"H. Beutel, T. Stieglitz, J. Meyer","doi":"10.1109/MEMSYS.1998.659773","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659773","url":null,"abstract":"This paper describes a new interconnection wire method which allows versatile multiple strand connections between microsensors: sensor arrays and integrated circuits (IC). The interconnection method is termed Micro Flex Interconnects (MFI). One example for this technology is the connection of implantable, highly flexible neural micro devices to electronics for interfacing to the external world. The interconnection technique is based on a novel multilayer process using polyimide (Du Pont PI 2611). The thickness of the polyimide structure ranges from 5 to 15 /spl mu/m including the insulation layers. Several metallization layers can be embedded in the material. This approach exhibits same advantages. The involved material is non-toxic and the ICs do not need any additional bond pad metallization. The MFI technique has been proven long-term stable. The metallization material can be chosen accordingly for electrodes, conducting lines, and connection pads. An commercial ball wedge bonder is the only equipment needed to perform the MFI method.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133485010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659792
H. Guckel, K. Fischer, E. Stiers
A linear magnetic actuator has been developed and fabricated for use in a closed loop control system. The actuator is an assembled device with a structure height of 1000 /spl mu/m and output force in the 100 milliNewton range. The actuator produces a large inductance change as it is displaced. The position dependent inductance is measured by control circuitry and used for micro positioning. The closed loop control system is capable of using inductance or capacitive feedback to produce stable position control. The control circuitry can produce submicron positional accuracy while minimizing the circuit cost and complexity. The control circuitry has been tested with the actuator and closed loop control has been obtained.
{"title":"Closed loop controlled, large throw, magnetic linear microactuator with 1000 /spl mu/m structural height","authors":"H. Guckel, K. Fischer, E. Stiers","doi":"10.1109/MEMSYS.1998.659792","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659792","url":null,"abstract":"A linear magnetic actuator has been developed and fabricated for use in a closed loop control system. The actuator is an assembled device with a structure height of 1000 /spl mu/m and output force in the 100 milliNewton range. The actuator produces a large inductance change as it is displaced. The position dependent inductance is measured by control circuitry and used for micro positioning. The closed loop control system is capable of using inductance or capacitive feedback to produce stable position control. The control circuitry can produce submicron positional accuracy while minimizing the circuit cost and complexity. The control circuitry has been tested with the actuator and closed loop control has been obtained.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116643293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659826
R. Steiner, M. Schneider, F. Mayer, U. Munch, T. Mayer, H. Baltes
A compact CMOS monitor system for galvanically isolated current measurement is presented. It is packaged with standard lead-on-chip technology and completely in line with commercial IC production. This technology includes inexpensive and high volume batch fabrication of chips followed by automatic mass packaging. The system has a linear response in a range of /spl plusmn/10 A with a small non-linearity below /spl plusmn/0.3%. This results in a measurement accuracy of better than 50 mA. The accuracy is further improved by soft ferromagnetic field concentrators.
{"title":"Fully packaged CMOS current monitor using lead-on-chip technology","authors":"R. Steiner, M. Schneider, F. Mayer, U. Munch, T. Mayer, H. Baltes","doi":"10.1109/MEMSYS.1998.659826","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659826","url":null,"abstract":"A compact CMOS monitor system for galvanically isolated current measurement is presented. It is packaged with standard lead-on-chip technology and completely in line with commercial IC production. This technology includes inexpensive and high volume batch fabrication of chips followed by automatic mass packaging. The system has a linear response in a range of /spl plusmn/10 A with a small non-linearity below /spl plusmn/0.3%. This results in a measurement accuracy of better than 50 mA. The accuracy is further improved by soft ferromagnetic field concentrators.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129809976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659818
Kazuo Sato, M. Shikida, T. Yamashiro, K. Asaumi, Y. Iriye, M. Yamamoto
We evaluated orientation dependence in the etching rate of single-crystal silicon for tetramethylammonium-hydroxide (TMAH) water solutions. Etching rates for a number of crystallographic orientations were measured for a wide range of etching conditions, including TMAH concentrations of 10 to 25% and temperatures of 70 to 90/spl deg/C. We found significantly different characteristics from those for KOH water solutions. Firstly, different types of orientation dependence in etching rate were found around (111) between TMAH and KOH. This means the bonding energy of the silicon crystal lattice is not a single factor that dominates orientation dependence, and there exist different etching mechanisms for the two etchants. Secondly, effects of the circulation of etchants on the etching rates were not negligible in TMAH in contrast to KOH system.
{"title":"Anisotropic etching rates of single-crystal silicon for TMAH water solution as a function of crystallographic orientation","authors":"Kazuo Sato, M. Shikida, T. Yamashiro, K. Asaumi, Y. Iriye, M. Yamamoto","doi":"10.1109/MEMSYS.1998.659818","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659818","url":null,"abstract":"We evaluated orientation dependence in the etching rate of single-crystal silicon for tetramethylammonium-hydroxide (TMAH) water solutions. Etching rates for a number of crystallographic orientations were measured for a wide range of etching conditions, including TMAH concentrations of 10 to 25% and temperatures of 70 to 90/spl deg/C. We found significantly different characteristics from those for KOH water solutions. Firstly, different types of orientation dependence in etching rate were found around (111) between TMAH and KOH. This means the bonding energy of the silicon crystal lattice is not a single factor that dominates orientation dependence, and there exist different etching mechanisms for the two etchants. Secondly, effects of the circulation of etchants on the etching rates were not negligible in TMAH in contrast to KOH system.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126342795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659753
S. Kobayashi, Y. Konaka, K. Ohwada
The effect of shape on the mechanical quality factor, Q, of a micromachined cantilever resonator has been investigated with a focus on the energy loss in the resonator, which is due to the internal friction of moving parts. Theoretical modeling and numerical simulations based on FEM were performed on a test structure. The relative value of Q was calculated by summing the squares of the stress on each constituent element of the beam when the curvature of either the support base or the resonating beam was varied. Test structures were fabricated and the mechanical quality factor was measured. The theoretical and experimental results agree well, which shows that stress distribution is an important factor determining Q. It was found that the curvature of the supporting base has little effect on Q, but that the curvature of the beam has a considerable effect.
{"title":"Shape effect on mechanical quality factor of micro-resonator","authors":"S. Kobayashi, Y. Konaka, K. Ohwada","doi":"10.1109/MEMSYS.1998.659753","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659753","url":null,"abstract":"The effect of shape on the mechanical quality factor, Q, of a micromachined cantilever resonator has been investigated with a focus on the energy loss in the resonator, which is due to the internal friction of moving parts. Theoretical modeling and numerical simulations based on FEM were performed on a test structure. The relative value of Q was calculated by summing the squares of the stress on each constituent element of the beam when the curvature of either the support base or the resonating beam was varied. Test structures were fabricated and the mechanical quality factor was measured. The theoretical and experimental results agree well, which shows that stress distribution is an important factor determining Q. It was found that the curvature of the supporting base has little effect on Q, but that the curvature of the beam has a considerable effect.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126401397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659810
E. Burte, Kerstin Rintelmann, G. Temmel
The state-of-the art in an anesthetic equipment uses a minimal flow concept to optimize anesthetic liquid consumption to cut costs and to protect the environment from anesthetic gases obtaining fluorine chlorine carbon compounds. In this work, a multi-channel sensing system is presented, which is capable of measuring the concentration of anesthetic gases in the mainstream of a respiratory circle. This system is based on non-dispersive infrared absorption spectroscopy and measures the concentration of carbon dioxide, nitrous oxide and any composition containing two of the following volatile anesthetics: Enfluran, Isofluran and Halothan. Furthermore, a microdosage system consisting of a micropump and a micronebulizer was developed. Both components are based on silicon technology. This system allows to adjust the anesthetic liquid mass flow from about 4 /spl mu/J/min up to about 1000 /spl mu/l/min. Both systems were tested as subsystems of the anesthetic apparatus Physioflex.
{"title":"Microsystems for measurement and dosage of volatile anesthetics and respirative gases in anesthetic equipment","authors":"E. Burte, Kerstin Rintelmann, G. Temmel","doi":"10.1109/MEMSYS.1998.659810","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659810","url":null,"abstract":"The state-of-the art in an anesthetic equipment uses a minimal flow concept to optimize anesthetic liquid consumption to cut costs and to protect the environment from anesthetic gases obtaining fluorine chlorine carbon compounds. In this work, a multi-channel sensing system is presented, which is capable of measuring the concentration of anesthetic gases in the mainstream of a respiratory circle. This system is based on non-dispersive infrared absorption spectroscopy and measures the concentration of carbon dioxide, nitrous oxide and any composition containing two of the following volatile anesthetics: Enfluran, Isofluran and Halothan. Furthermore, a microdosage system consisting of a micropump and a micronebulizer was developed. Both components are based on silicon technology. This system allows to adjust the anesthetic liquid mass flow from about 4 /spl mu/J/min up to about 1000 /spl mu/l/min. Both systems were tested as subsystems of the anesthetic apparatus Physioflex.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"63 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115325817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659767
A. Nadeem, M. Mescher, K. Rebello, L. Weiss, C. Wu, M. Feldman, M. L. Reed
A promising technique for the fabrication of high-aspect-ratio microstructures, presented by Tan et. al. at MEMS-95, takes advantage of the highly ordered pore structure of anodic metal oxides. In this work, we have extended and simplified this method. This process is capable of producing high-aspect-ratio microstructures oriented normal to a nonplanar substrate. Unlike the original process in which the aluminum substrate was anodized to the desired depth, masked and subsequently etched, the modified process involves performing the masking lithography prior to anodization. Patterned areas of an aluminum substrate are masked with a 0.6/spl mu/m layer of sputtered silicon dioxide. The SiO/sub 2/ layer prevents anodization in masked areas while the oxide grows in unmasked areas. In this paper, we present preliminary results using this local anodization process on aluminum substrates and discuss the use of the process for fabricating structures on nonplanar substrates.
Tan等人在MEMS-95上提出了一种很有前途的制造高纵横比微结构的技术，该技术利用了阳极金属氧化物的高度有序的孔隙结构。在这项工作中，我们对该方法进行了扩展和简化。该工艺能够产生面向非平面衬底的高纵横比微结构。与将铝基板阳极氧化至所需深度、掩膜并随后蚀刻的原始工艺不同，改进的工艺涉及在阳极氧化之前进行掩膜光刻。铝衬底的图案区域被0.6/spl μ m /m的溅射二氧化硅层掩盖。SiO/ sub2 /层防止在被遮挡区域阳极化，而氧化物在未被遮挡区域生长。在本文中，我们介绍了在铝基板上使用这种局部阳极氧化工艺的初步结果，并讨论了该工艺在非平面基板上制造结构的应用。
{"title":"Fabrication of microstructures using aluminum anodization techniques","authors":"A. Nadeem, M. Mescher, K. Rebello, L. Weiss, C. Wu, M. Feldman, M. L. Reed","doi":"10.1109/MEMSYS.1998.659767","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659767","url":null,"abstract":"A promising technique for the fabrication of high-aspect-ratio microstructures, presented by Tan et. al. at MEMS-95, takes advantage of the highly ordered pore structure of anodic metal oxides. In this work, we have extended and simplified this method. This process is capable of producing high-aspect-ratio microstructures oriented normal to a nonplanar substrate. Unlike the original process in which the aluminum substrate was anodized to the desired depth, masked and subsequently etched, the modified process involves performing the masking lithography prior to anodization. Patterned areas of an aluminum substrate are masked with a 0.6/spl mu/m layer of sputtered silicon dioxide. The SiO/sub 2/ layer prevents anodization in masked areas while the oxide grows in unmasked areas. In this paper, we present preliminary results using this local anodization process on aluminum substrates and discuss the use of the process for fabricating structures on nonplanar substrates.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115330147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659733
C. Huang, K. Najafi, E. Alnajjar, C. Christophorou, A. Naguib, H. Nagib
The operation and testing of a combined microactuator/microsensor system for use in a high speed jet are presented. Electrostatic actuators have been fabricated using a bulk-silicon dissolved-wafer process, and are more than 12 /spl mu/m in thickness to achieve a large stiffness in the z-direction. The "micro" actuators resonate at a frequency of 5 kHz/14 kHz and an amplitude of >70 /spl mu/m peak-peak, generate significant disturbances into the "macro" scale jet flow, and survive operation at speeds of >210 m/s. An array of micromachined sound detectors for the detection of onset of jet screech has also been fabricated. The detectors use stress compensated PECVD silicon nitride/oxide membranes together with monocrystalline ion-implanted p/sup ++/ silicon piezoresistors to achieve high sensitivity. They have a static sensitivity of 1.1 /spl mu/V/V/spl middot/Pa with a 2% nonlinearity over an operating pressure range of 10 kPa.
{"title":"Operation and testing of electrostatic microactuators and micromachined sound detectors for active control of high speed flows","authors":"C. Huang, K. Najafi, E. Alnajjar, C. Christophorou, A. Naguib, H. Nagib","doi":"10.1109/MEMSYS.1998.659733","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659733","url":null,"abstract":"The operation and testing of a combined microactuator/microsensor system for use in a high speed jet are presented. Electrostatic actuators have been fabricated using a bulk-silicon dissolved-wafer process, and are more than 12 /spl mu/m in thickness to achieve a large stiffness in the z-direction. The \"micro\" actuators resonate at a frequency of 5 kHz/14 kHz and an amplitude of >70 /spl mu/m peak-peak, generate significant disturbances into the \"macro\" scale jet flow, and survive operation at speeds of >210 m/s. An array of micromachined sound detectors for the detection of onset of jet screech has also been fabricated. The detectors use stress compensated PECVD silicon nitride/oxide membranes together with monocrystalline ion-implanted p/sup ++/ silicon piezoresistors to achieve high sensitivity. They have a static sensitivity of 1.1 /spl mu/V/V/spl middot/Pa with a 2% nonlinearity over an operating pressure range of 10 kPa.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"73 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128363543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659749
J. Mehner, S. Kurth, D. Billep, C. Kaufmann, K. Kehr, W. Dotzel
Methods to calculate the fluid depending forces in movable micromechanical structures will be shown in this paper. In most cases fluid flow within narrow air gaps can be simply described by the Reynolds gas film equation. Analytical solutions are known for simple plate shapes. New ways to describe the damping and squeeze film effect for nontrivial plate shapes using analogy relations are discussed. Reynolds equation fails in the case of large air gaps between plates or if free outstream conditions are not valid. In these cases the general Navier-Stokes-Equation must be used. FE-tools with fluidmechanical capabilities are able to solve this partial differential equation and allow a damping analysis. Phase shift between plates velocity and reaction forces can be interpreted as additional inertial or squeeze forces. Results of simulation and experimental analysis are verified on a gyroscope and a micromirror array.
{"title":"Simulation of gas damping in microstructures with nontrivial geometries","authors":"J. Mehner, S. Kurth, D. Billep, C. Kaufmann, K. Kehr, W. Dotzel","doi":"10.1109/MEMSYS.1998.659749","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659749","url":null,"abstract":"Methods to calculate the fluid depending forces in movable micromechanical structures will be shown in this paper. In most cases fluid flow within narrow air gaps can be simply described by the Reynolds gas film equation. Analytical solutions are known for simple plate shapes. New ways to describe the damping and squeeze film effect for nontrivial plate shapes using analogy relations are discussed. Reynolds equation fails in the case of large air gaps between plates or if free outstream conditions are not valid. In these cases the general Navier-Stokes-Equation must be used. FE-tools with fluidmechanical capabilities are able to solve this partial differential equation and allow a damping analysis. Phase shift between plates velocity and reaction forces can be interpreted as additional inertial or squeeze forces. Results of simulation and experimental analysis are verified on a gyroscope and a micromirror array.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131396266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-25DOI: 10.1109/MEMSYS.1998.659780
Y. Yee, M. Park, S. Lee, S. Lee, K. Chun, Y. Kim, D. Cho
A fully digital integrated accelerometer was designed and fabricated based on CMOS and micromachining technologies. The sensing elements of this accelerometer are floating gated n-type MOSFETs with the variable airgap proportional to applied acceleration as gate insulator. The change of this air-gap distance alters the drain current of the sensing MOSFET (metal air-gap MOSFET: MAMOS). Current controlled oscillator converts the change of the drain current of MAMOS to frequency output. Twenty-bit synchronous binary counter is integrated to digitize the frequency output. CMOS compatible doping and annealing process for 2-/spl mu/m-thick polysilicon used as suspension springs is developed to optimize the trade-off between the mechanical properties and the electrical requirements. Through the slightly modified 1.5 /spl mu/m CMOS integrated circuit process followed by anisotropic silicon etch, integrated silicon digital accelerometer was fabricated.
基于CMOS和微加工技术，设计并制作了全数字集成加速度计。该加速度计的传感元件为浮动门控n型mosfet，其气隙与外加加速度成正比，用作栅极绝缘体。这个气隙距离的变化改变了感测MOSFET(金属气隙MOSFET: MAMOS)的漏极电流。电流控制振荡器将漏极电流的变化转换为频率输出。集成了20位同步二进制计数器，实现了频率输出的数字化。开发了2-/spl μ m /m厚多晶硅悬架弹簧的CMOS兼容掺杂退火工艺，优化了机械性能和电气性能之间的平衡。采用略微改进的1.5 /spl mu/m CMOS集成电路工艺，然后进行各向异性硅蚀刻，制成集成硅数字加速度计。
{"title":"MAMOS-a novel displacement sensitive transducer for fully digital integrated ac accelerometer","authors":"Y. Yee, M. Park, S. Lee, S. Lee, K. Chun, Y. Kim, D. Cho","doi":"10.1109/MEMSYS.1998.659780","DOIUrl":"https://doi.org/10.1109/MEMSYS.1998.659780","url":null,"abstract":"A fully digital integrated accelerometer was designed and fabricated based on CMOS and micromachining technologies. The sensing elements of this accelerometer are floating gated n-type MOSFETs with the variable airgap proportional to applied acceleration as gate insulator. The change of this air-gap distance alters the drain current of the sensing MOSFET (metal air-gap MOSFET: MAMOS). Current controlled oscillator converts the change of the drain current of MAMOS to frequency output. Twenty-bit synchronous binary counter is integrated to digitize the frequency output. CMOS compatible doping and annealing process for 2-/spl mu/m-thick polysilicon used as suspension springs is developed to optimize the trade-off between the mechanical properties and the electrical requirements. Through the slightly modified 1.5 /spl mu/m CMOS integrated circuit process followed by anisotropic silicon etch, integrated silicon digital accelerometer was fabricated.","PeriodicalId":340972,"journal":{"name":"Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128117359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Proceedings MEMS 98. IEEE. Eleventh Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems (Cat. No.98CH36176
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