Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298146
V. B. Sivieri, P. Agopian, J. Martino
In this work, the impact of diameter on the TFET conduction mechanisms and the consequent influence on the device performance is investigated through simulation analysis. The results show a higher current level and a lower gate voltage to reach the band-to-band tunneling regime in NW-TFETs with smaller diameters. Some anomalies related to the performance degradation were found in the transfer characteristic curves of the narrower devices (D <; 30 nm) and are analyzed based on the simulated energy band diagrams and tunneling rate values. The Si NW-TFET with 10 nm diameter presented a drain current approximately 3 orders of magnitude lower than the larger nanowires at high gate voltages due to presence of gate/source overlap region in abrupt source/channel junction.
{"title":"Impact of diameter on TFET conduction mechanisms","authors":"V. B. Sivieri, P. Agopian, J. Martino","doi":"10.1109/SBMICRO.2015.7298146","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298146","url":null,"abstract":"In this work, the impact of diameter on the TFET conduction mechanisms and the consequent influence on the device performance is investigated through simulation analysis. The results show a higher current level and a lower gate voltage to reach the band-to-band tunneling regime in NW-TFETs with smaller diameters. Some anomalies related to the performance degradation were found in the transfer characteristic curves of the narrower devices (D <; 30 nm) and are analyzed based on the simulated energy band diagrams and tunneling rate values. The Si NW-TFET with 10 nm diameter presented a drain current approximately 3 orders of magnitude lower than the larger nanowires at high gate voltages due to presence of gate/source overlap region in abrupt source/channel junction.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"347 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116495472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298130
I. Hernández, M. Estrada, I. Garduño, J. Tinoco, A. Cerdeira
The electrical properties of RF magnetron sputtered HfO2 layers as dielectric and Hafnium-Indium-Zinc-Oxide HIZO as semiconductor in metal-insulator-semiconductor (MIS) structures are investigated. The dielectric constant of the HfO2 layer was around 9 measured at 10 kHz. The critical electric field was higher than 5×105 V/cm and the leakage current below 5×10-9 A/cm2. The effective charged density of interface states in the order of 5×1012 cm-2. Flat band shift due to polarization of the dielectric at voltage rage between -5 and 5 V is below 0.5 V. The RF deposited HIZO layer presents higher density of interface and bulk traps than similar layers deposited by other more complex techniques requiring higher processing temperature. However, results indicate that they can still be used in low voltage range amorphous oxide semiconductor thin film transistors AOSTFTs.
{"title":"Characterization of HfO2 on Hafnium-Indium-Zinc Oxide HIZO layer metal-insulator-semiconductor structures deposited by RF sputtering","authors":"I. Hernández, M. Estrada, I. Garduño, J. Tinoco, A. Cerdeira","doi":"10.1109/SBMICRO.2015.7298130","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298130","url":null,"abstract":"The electrical properties of RF magnetron sputtered HfO<sub>2</sub> layers as dielectric and Hafnium-Indium-Zinc-Oxide HIZO as semiconductor in metal-insulator-semiconductor (MIS) structures are investigated. The dielectric constant of the HfO<sub>2</sub> layer was around 9 measured at 10 kHz. The critical electric field was higher than 5×10<sup>5</sup> V/cm and the leakage current below 5×10<sup>-9</sup> A/cm<sup>2</sup>. The effective charged density of interface states in the order of 5×10<sup>12</sup> cm<sup>-2</sup>. Flat band shift due to polarization of the dielectric at voltage rage between -5 and 5 V is below 0.5 V. The RF deposited HIZO layer presents higher density of interface and bulk traps than similar layers deposited by other more complex techniques requiring higher processing temperature. However, results indicate that they can still be used in low voltage range amorphous oxide semiconductor thin film transistors AOSTFTs.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114654242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298151
A. L. F. Cauduro, C. I. Sombrio, P. Franzen, H. Boudinov, D. L. Baptista
Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments.
{"title":"Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments","authors":"A. L. F. Cauduro, C. I. Sombrio, P. Franzen, H. Boudinov, D. L. Baptista","doi":"10.1109/SBMICRO.2015.7298151","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298151","url":null,"abstract":"Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and donor acceptor pairs. The PL spectra shows deep level emissions ranging from 1.4 eV up to 2.8 eV, strongly depending on surface defects whereas the red emission (1.7 eV) is activated at cryogenic temperatures. We attribute the green luminescence (2.4 eV) emission to the presence of zinc vacancies into ZnO nanowires. Further evidences that confirm the mechanism are observed in the PL emission spectra after annealing in O2 or Ar environments.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124246512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298109
L. P. Etcheverry, F. Rodembusch, H. Boudinov, A. Gundel, E. C. Moreira
In this work it is presented a photophysical study of thin films based on excited-state intermolecular proton transfer dyes 2-(4'amino-2'-hydroxyphenyl)benzoxazole (AHPBO) and 2-(4'aminophenyl)benzoxazole (APBO). The studied thin films were characterized by Raman Spectroscopy, Atomic Force Microscopy, as well as Photoluminescence and UV-Vis absorption spectroscopies. In addition, theoretical calculations were applied using Gaussian09 software to obtain vibrational frequencies, corresponding vibrational assignments and its correlation with experimentally obtained by Raman spectra. The ESIPT mechanism showed to play a fundamental role on the photophysics of the AHPBO in despite of the APBO where only a locally excited specie takes place in the excited state.
{"title":"Photoactive thin films based on benzoxazole derivatives","authors":"L. P. Etcheverry, F. Rodembusch, H. Boudinov, A. Gundel, E. C. Moreira","doi":"10.1109/SBMICRO.2015.7298109","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298109","url":null,"abstract":"In this work it is presented a photophysical study of thin films based on excited-state intermolecular proton transfer dyes 2-(4'amino-2'-hydroxyphenyl)benzoxazole (AHPBO) and 2-(4'aminophenyl)benzoxazole (APBO). The studied thin films were characterized by Raman Spectroscopy, Atomic Force Microscopy, as well as Photoluminescence and UV-Vis absorption spectroscopies. In addition, theoretical calculations were applied using Gaussian09 software to obtain vibrational frequencies, corresponding vibrational assignments and its correlation with experimentally obtained by Raman spectra. The ESIPT mechanism showed to play a fundamental role on the photophysics of the AHPBO in despite of the APBO where only a locally excited specie takes place in the excited state.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129185997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298116
A. Volponi, S. G. dos Santos Filho
In this work, it is presented the carbon dioxide sensing at near infrared using zeolitic imidazolate framework-8 (ZIF-8) absorbers. ZIF-8 was synthesized by dissolving 4.3 g of zinc nitrate hexahydrate and 9.7 g of 2-methylimidazole in 800 mL of ethanol. The solution was stirred for 60 min at room temperature and 10mL of the fresh solution was dripped and spread over the rough side of a Si wafer to be dryed at the room temperature during 10 min and annealed at 150°C during 5 h in ultrapure N2. As a result, 11.7-μm thick films were obtained on the Si-p wafers. From FTIR spectroscopy, it was worthy of note that the signal of the asymmetric stretching mode at 2337 cm-1 increases with the increase of the CO2 pressure and with the time interval in which the pressure is kept. Besides the component at 2337 cm-1, a second component was also observed at 2360 cm-1, indicating two different mechanisms of CO2 adsorption. The component at 2337 cm-1 was interpreted as a substantial portion of CO2 molecules inserted into the ZIF-8 film at the contours of the nanocrystals or inside of the framework and the component at 2360 cm-1 was understood as a portion of CO2 molecules adsorbed directly on the surface of the ZIF-8 film. In addition, it was observed a sensitivity of 100 ppm for CO2 if the ZIF-8 loading time at the atmospheric pressure is at least twenty minutes in order to achieve a measurable absorbance inferior limit of 0.01.
{"title":"Carbon dioxide sensing at near infrared using zeolitic imidazolate framework-8 (ZIF-8) absorbers","authors":"A. Volponi, S. G. dos Santos Filho","doi":"10.1109/SBMICRO.2015.7298116","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298116","url":null,"abstract":"In this work, it is presented the carbon dioxide sensing at near infrared using zeolitic imidazolate framework-8 (ZIF-8) absorbers. ZIF-8 was synthesized by dissolving 4.3 g of zinc nitrate hexahydrate and 9.7 g of 2-methylimidazole in 800 mL of ethanol. The solution was stirred for 60 min at room temperature and 10mL of the fresh solution was dripped and spread over the rough side of a Si wafer to be dryed at the room temperature during 10 min and annealed at 150°C during 5 h in ultrapure N2. As a result, 11.7-μm thick films were obtained on the Si-p wafers. From FTIR spectroscopy, it was worthy of note that the signal of the asymmetric stretching mode at 2337 cm-1 increases with the increase of the CO2 pressure and with the time interval in which the pressure is kept. Besides the component at 2337 cm-1, a second component was also observed at 2360 cm-1, indicating two different mechanisms of CO2 adsorption. The component at 2337 cm-1 was interpreted as a substantial portion of CO2 molecules inserted into the ZIF-8 film at the contours of the nanocrystals or inside of the framework and the component at 2360 cm-1 was understood as a portion of CO2 molecules adsorbed directly on the surface of the ZIF-8 film. In addition, it was observed a sensitivity of 100 ppm for CO2 if the ZIF-8 loading time at the atmospheric pressure is at least twenty minutes in order to achieve a measurable absorbance inferior limit of 0.01.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128373787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298112
F. A. Bomfim, D. L. D. Silva, L. Kassab, M. I. Alayo
We report experimental results on pedestal waveguides produced with Yb3+ /Er3+ codoped PbO-GeO2 thin films deposited by RF Sputtering for photonic applications. Losses around 2.5 dB/cm and 1.5 dB/cm were obtained at 632 and 1068 nm, respectively, for waveguides in the 20-100 μm width range. Internal gain of 6.0 dB and 4.0 dB, at 1530 nm, under 980 nm excitation, were measured for waveguides width of 80 and 14 μm, respectively. The present results show the possibility of using Yb3+/Er3+ codoped PbO-GeO2 pedestal waveguide for optical amplifiers.
{"title":"Production of Yb3+/Er3+ codoped PbO-GeO2 pedestal type waveguides for photonic applications","authors":"F. A. Bomfim, D. L. D. Silva, L. Kassab, M. I. Alayo","doi":"10.1109/SBMICRO.2015.7298112","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298112","url":null,"abstract":"We report experimental results on pedestal waveguides produced with Yb<sup>3+</sup> /Er<sup>3+</sup> codoped PbO-GeO<sub>2</sub> thin films deposited by RF Sputtering for photonic applications. Losses around 2.5 dB/cm and 1.5 dB/cm were obtained at 632 and 1068 nm, respectively, for waveguides in the 20-100 μm width range. Internal gain of 6.0 dB and 4.0 dB, at 1530 nm, under 980 nm excitation, were measured for waveguides width of 80 and 14 μm, respectively. The present results show the possibility of using Yb<sup>3+</sup>/Er<sup>3+</sup> codoped PbO-GeO<sub>2</sub> pedestal waveguide for optical amplifiers.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116330557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298134
R. Doria, D. Flandre, R. Trevisoli, M. de Souza, M. Pavanello
This paper reports, for the first time, the use of back gate bias to improve the intrinsic voltage gain of self-cascode structures composed by planar FD and UTBB SOI MOSFETs. It is shown a voltage gain improvement larger than 10 dB when either a forward back bias is applied to the drain-side transistor or a reverse back bias is applied to the source side device.
本文首次报道了利用反向偏置提高由平面FD和UTBB SOI mosfet组成的自级联码结构的固有电压增益。结果显示，当漏极侧晶体管施加正向反偏置或源侧器件施加反向反偏置时，电压增益提高大于10 dB。
{"title":"Use of back gate bias to enhance the analog performance of planar FD and UTBB SOI transistors-based self-cascode structures","authors":"R. Doria, D. Flandre, R. Trevisoli, M. de Souza, M. Pavanello","doi":"10.1109/SBMICRO.2015.7298134","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298134","url":null,"abstract":"This paper reports, for the first time, the use of back gate bias to improve the intrinsic voltage gain of self-cascode structures composed by planar FD and UTBB SOI MOSFETs. It is shown a voltage gain improvement larger than 10 dB when either a forward back bias is applied to the drain-side transistor or a reverse back bias is applied to the source side device.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121720673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298121
R. Rangel, J. Martino
We report for the first time the fabrication of Back Enhanced (BE) SOI pMOSFET. In this device, there is no doping step process like ion implantation, diffusion or other kind of doping for formation of source/drain or channel, and it is a planar device. The source/drain is enhanced (holes accumulated at back interface) by applying a high negative voltage at back gate (substrate). The front gate voltage should be enough to pinch off the channel. This device is very simple to fabricate, and thus allows many universities an opportunity to fabricate your own device for educational purposes. Moreover, this device has also interesting features like a threshold voltage modulate by back gate from negative to positive (resulting in enhanced and depletion mode operation), a subthreshold slope of 77mV/dec, body factor of 1.11 and ION/IOFF of 105. The BE SOI MOSFET parameter is compatible with other devices with the same operation principle, i.e. current flows near to back interface, but it is much easier to fabricate, using only tree photolithography steps.
本文首次报道了背增强(BE) SOI pMOSFET的制备。该器件不存在离子注入、扩散或其他掺杂等形成源漏或通道的掺杂阶跃过程，为平面器件。通过在后门(衬底)施加高负电压，源极/漏极得到增强(在后界面上积累孔)。前门电压应该足够掐断通道。这种设备制造起来非常简单，因此许多大学都有机会制造自己的设备用于教育目的。此外，该器件还具有一些有趣的特性，如后门从负到正的阈值电压调制(导致增强和耗尽模式工作)，亚阈值斜率为77mV/dec，体因子为1.11,ION/IOFF为105。BE SOI MOSFET参数与具有相同工作原理的其他器件兼容，即电流在靠近后接口处流动，但它更容易制造，仅使用三个光刻步骤。
{"title":"Back Enhanced (BE) SOI pMOSFET","authors":"R. Rangel, J. Martino","doi":"10.1109/SBMICRO.2015.7298121","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298121","url":null,"abstract":"We report for the first time the fabrication of Back Enhanced (BE) SOI pMOSFET. In this device, there is no doping step process like ion implantation, diffusion or other kind of doping for formation of source/drain or channel, and it is a planar device. The source/drain is enhanced (holes accumulated at back interface) by applying a high negative voltage at back gate (substrate). The front gate voltage should be enough to pinch off the channel. This device is very simple to fabricate, and thus allows many universities an opportunity to fabricate your own device for educational purposes. Moreover, this device has also interesting features like a threshold voltage modulate by back gate from negative to positive (resulting in enhanced and depletion mode operation), a subthreshold slope of 77mV/dec, body factor of 1.11 and ION/IOFF of 105. The BE SOI MOSFET parameter is compatible with other devices with the same operation principle, i.e. current flows near to back interface, but it is much easier to fabricate, using only tree photolithography steps.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121403186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298143
O. Bonnaud, Xuefei Zhong
In the Far-East there are more and more international joint programs between local universities and occidental academic institutions. In the field of microelectronics, joint masters were set-up. The aim is to form on both sides the students in order to give them the skills and the know-how adapted to economic world. The paper deals with the difference of culture based on the origin of the students that leads to a difference of pedagogical approach by the professorial body. The purpose is built on the experience of a French-Chinese joint master. The proposed solutions had proved their efficiency.
{"title":"Adaptation of the pedagogical approaches for master students in microelectronics in the frame of a French-Chinese joint program","authors":"O. Bonnaud, Xuefei Zhong","doi":"10.1109/SBMICRO.2015.7298143","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298143","url":null,"abstract":"In the Far-East there are more and more international joint programs between local universities and occidental academic institutions. In the field of microelectronics, joint masters were set-up. The aim is to form on both sides the students in order to give them the skills and the know-how adapted to economic world. The paper deals with the difference of culture based on the origin of the students that leads to a difference of pedagogical approach by the professorial body. The purpose is built on the experience of a French-Chinese joint master. The proposed solutions had proved their efficiency.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114375111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298148
C. Bordallo, J. Martino, P. Agopian, R. Rooyackers, A. Vandooren, A. Thean, E. Simoen, C. Claeys
In this work, the analysis of analog parameters in Tunnel-FET devices is performed at high temperatures and for two different source compositions (Si and Si0.73Ge0.27). For high gate voltage, band-to-band tunneling is the dominant mechanism, and due to that, a degradation in output conductance (gD), early voltage (VEA) and intrinsic voltage gain (AV) was observed. In the SiGe devices, trap assisted tunneling is the dominant mechanism at low gate bias, which improves gD, VEA and consequently AV. The temperature increases both ION and IOFF current leading to a degradation of gD, VEA and AV. The transistor efficiency (gm/ID) decreases at high temperature in the “weak inversion region” and improves in the “strong inversion region” at high current.
{"title":"Analysis of analog parameters in NW-TFETs with Si and SiGe source composition at high temperatures","authors":"C. Bordallo, J. Martino, P. Agopian, R. Rooyackers, A. Vandooren, A. Thean, E. Simoen, C. Claeys","doi":"10.1109/SBMICRO.2015.7298148","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298148","url":null,"abstract":"In this work, the analysis of analog parameters in Tunnel-FET devices is performed at high temperatures and for two different source compositions (Si and Si<sub>0.73</sub>Ge<sub>0.27</sub>). For high gate voltage, band-to-band tunneling is the dominant mechanism, and due to that, a degradation in output conductance (g<sub>D</sub>), early voltage (V<sub>EA</sub>) and intrinsic voltage gain (A<sub>V</sub>) was observed. In the SiGe devices, trap assisted tunneling is the dominant mechanism at low gate bias, which improves g<sub>D</sub>, V<sub>EA</sub> and consequently A<sub>V</sub>. The temperature increases both I<sub>ON</sub> and I<sub>OFF</sub> current leading to a degradation of g<sub>D</sub>, V<sub>EA</sub> and A<sub>V</sub>. The transistor efficiency (gm/I<sub>D</sub>) decreases at high temperature in the “weak inversion region” and improves in the “strong inversion region” at high current.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114624396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：