Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298103
V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr
Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.
{"title":"CMOS-compatible spintronic devices","authors":"V. Sverdlov, J. Ghosh, A. Makarov, T. Windbacher, S. Selberherr","doi":"10.1109/SBMICRO.2015.7298103","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298103","url":null,"abstract":"Silicon is perfectly suited for spin-driven applications. Recent progress and challenges regarding CMOS-compatible spin-based devices are reviewed. A realization of an intrinsic non-volatile logic-in-memory architecture in an MRAM array is demonstrated.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"338 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115891828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298114
V. Itocazu, V. Sonnenberg, E. Simoen, C. Claeys, J. Martino
This paper presents an analysis of the Ground Plane (GP) influence on analog parameters of Ultra Thin Body and Buried Oxide (UTBB) SOl nMOSFET devices based on experimental data and simulations results. The presence of a GP improves the transconductance in the saturation region due to the strong coupling between front and back gates. However, the GP worsens the output conductance due to the higher drain electrical field penetration observed by simulation. As a result, the devices without ground plane present better results in intrinsic voltage gain, Early Voltage and Drain Induced Barrier Lowering.
{"title":"Ground Plane influence on UTBB SOI nMOSFET analog parameters","authors":"V. Itocazu, V. Sonnenberg, E. Simoen, C. Claeys, J. Martino","doi":"10.1109/SBMICRO.2015.7298114","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298114","url":null,"abstract":"This paper presents an analysis of the Ground Plane (GP) influence on analog parameters of Ultra Thin Body and Buried Oxide (UTBB) SOl nMOSFET devices based on experimental data and simulations results. The presence of a GP improves the transconductance in the saturation region due to the strong coupling between front and back gates. However, the GP worsens the output conductance due to the higher drain electrical field penetration observed by simulation. As a result, the devices without ground plane present better results in intrinsic voltage gain, Early Voltage and Drain Induced Barrier Lowering.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124321724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298107
V. Gomes, A. D. Barros, J. B. D. Filho, S. Martinoia, A. Pasquarelli, J. Swart
Stimulation and recording of nerve cells is a procedure used for several applications, such as clinical therapies, study of basic neuroscience, and neural prostheses. Microtechnology and advances in material science have allowed to produce more sophisticated devices and with more functions. This paper focuses on the fabrication of planar 60-channel MEAs. The electrical characterization of the noise level from the TiN electrodes showed good sensitivity to noise, compatible with commercial systems. These electrodes received an artificial electrocardiogram signal (ECG) from a function generator and registered the same input signal but with lower amplitude. Finally, both cyclic voltammetry curves of the produced MEA and the commercial MEA exhibited similar shape, but the amplitude of the first one was significantly higher than in MCS-MEA, with an order difference of magnitude.
{"title":"Fabrication of 60 channel microelectrode arrays for future use with cultured neuronal networks","authors":"V. Gomes, A. D. Barros, J. B. D. Filho, S. Martinoia, A. Pasquarelli, J. Swart","doi":"10.1109/SBMICRO.2015.7298107","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298107","url":null,"abstract":"Stimulation and recording of nerve cells is a procedure used for several applications, such as clinical therapies, study of basic neuroscience, and neural prostheses. Microtechnology and advances in material science have allowed to produce more sophisticated devices and with more functions. This paper focuses on the fabrication of planar 60-channel MEAs. The electrical characterization of the noise level from the TiN electrodes showed good sensitivity to noise, compatible with commercial systems. These electrodes received an artificial electrocardiogram signal (ECG) from a function generator and registered the same input signal but with lower amplitude. Finally, both cyclic voltammetry curves of the produced MEA and the commercial MEA exhibited similar shape, but the amplitude of the first one was significantly higher than in MCS-MEA, with an order difference of magnitude.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120935439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-10-15DOI: 10.1109/SBMICRO.2015.7298119
I. R. Kaufmann, M. Pereira, H. Boudinov
Schottky Barrier Height (SBH) of Metal-Insulator-Semiconductor Ni/SiC diodes were theoretically and experimentally analysed through simulation/measurements of Current-Voltage curves. The SBH increase with the temperature was studied by Thermionic Emission Model, considering an insulator layer between metal and semiconductor. A new method of simulation is described, showing that extracting the SBH without taking into account the existence of the insulating layer, provides misleading results for Schottky diodes with Metal Insulator Semiconductor structure. The difference between real SBH and apparent SBH is discussed. An explanation for the SBH apparent increasing when the measuring temperature is increased is suggested. As an example the model is applied on fabricated Ni/SiC Schottky structures.
{"title":"Apparent Schottky Barrier Height of MIS Ni/SiC diodes","authors":"I. R. Kaufmann, M. Pereira, H. Boudinov","doi":"10.1109/SBMICRO.2015.7298119","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298119","url":null,"abstract":"Schottky Barrier Height (SBH) of Metal-Insulator-Semiconductor Ni/SiC diodes were theoretically and experimentally analysed through simulation/measurements of Current-Voltage curves. The SBH increase with the temperature was studied by Thermionic Emission Model, considering an insulator layer between metal and semiconductor. A new method of simulation is described, showing that extracting the SBH without taking into account the existence of the insulating layer, provides misleading results for Schottky diodes with Metal Insulator Semiconductor structure. The difference between real SBH and apparent SBH is discussed. An explanation for the SBH apparent increasing when the measuring temperature is increased is suggested. As an example the model is applied on fabricated Ni/SiC Schottky structures.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126431591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-31DOI: 10.1109/SBMICRO.2015.7298140
I. Nikolaou, H. Hallil, G. Deligeorgis, V. Conedera, H. Garcia, C. Dejous, D. Rebière
This work presents ultrasensitive Surface Acoustic Wave (SAW) devices based on graphene. Since, a great deal of research work has been invested in this field, graphene innovative solutions have been prepared in order to explore gas - moisture sensing applications. The real time detection measurement of the coated sensor under C2H6O and Relative Humidity (RH) is presented. The adsorption of vapor compounds leads to a frequency shift of several kHz, at low exposures of the target analytes, respectively. The experiments have realized at room temperature and rapid response and short recovery time were observed.
{"title":"Novel SAW gas sensor based on graphene","authors":"I. Nikolaou, H. Hallil, G. Deligeorgis, V. Conedera, H. Garcia, C. Dejous, D. Rebière","doi":"10.1109/SBMICRO.2015.7298140","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298140","url":null,"abstract":"This work presents ultrasensitive Surface Acoustic Wave (SAW) devices based on graphene. Since, a great deal of research work has been invested in this field, graphene innovative solutions have been prepared in order to explore gas - moisture sensing applications. The real time detection measurement of the coated sensor under C2H6O and Relative Humidity (RH) is presented. The adsorption of vapor compounds leads to a frequency shift of several kHz, at low exposures of the target analytes, respectively. The experiments have realized at room temperature and rapid response and short recovery time were observed.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126575307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/SBMICRO.2015.7298132
M. Adam, A. Coelho, M. Pereira, H. Boudinov
Reactive sputtering deposition of SixNy layers for application in MONOS memory fabrication was studied. The optical, electrical and compositional properties of these silicon nitride films were investigated by spectral ellipsometry measurements, I-V measurements and MEIS. Two films with different deposition regimes are described: sample A with a lack of silicon, and sample B with an excess of silicon. The compositional results obtained by MEIS showed the stoichiometry of Si2.6N4 for sample A and Si3.3N4 for sample B. Silicon excess in sample B results in a less resistive film as compared to sample A. Two memory devices have been fabricated for comparison, using both deposition regimes. Retention and endurance measurements have been performed and it was observed that memory B has a Program/Erase window of 10 V, approximately 3 times larger than that of memory A. Endurance measurements revealed that memory B has non-zero window after 10 000 cycles, while memory A window is practically zero after 200 cycles. These results point to an improvement of memory characteristics with the use of silicon rich sputtered SixNy layers.
{"title":"Reactive sputtering of SixNy for MONOS memory fabrication","authors":"M. Adam, A. Coelho, M. Pereira, H. Boudinov","doi":"10.1109/SBMICRO.2015.7298132","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298132","url":null,"abstract":"Reactive sputtering deposition of SixNy layers for application in MONOS memory fabrication was studied. The optical, electrical and compositional properties of these silicon nitride films were investigated by spectral ellipsometry measurements, I-V measurements and MEIS. Two films with different deposition regimes are described: sample A with a lack of silicon, and sample B with an excess of silicon. The compositional results obtained by MEIS showed the stoichiometry of Si2.6N4 for sample A and Si3.3N4 for sample B. Silicon excess in sample B results in a less resistive film as compared to sample A. Two memory devices have been fabricated for comparison, using both deposition regimes. Retention and endurance measurements have been performed and it was observed that memory B has a Program/Erase window of 10 V, approximately 3 times larger than that of memory A. Endurance measurements revealed that memory B has non-zero window after 10 000 cycles, while memory A window is practically zero after 200 cycles. These results point to an improvement of memory characteristics with the use of silicon rich sputtered SixNy layers.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123068808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/SBMICRO.2015.7298129
C. B. Adamo, A. Flacker, Hercílio M. Cavalcanti, R. C. Teixeira, A. Rotondaro, L. Manera
This paper evaluates the development of Multi-Chip Module Deposited (MCM-D) technology using photosensitive benzocyclobutene (BCB) to produce passive devices. The polymer was used as the dielectric and Ni-P/Au was used as the conductor film. The resistors' sheet resistance was measured with both TLM and direct measurement while the measurements of the capacitors and inductors required the usage of a Vector Network Analyzer (VNA) and treatment of the obtained s-parameters matrix in order to extract the values of both the capacitances and inductances.
{"title":"Development of MCM-D technology with photosensitive benzocyclobutene","authors":"C. B. Adamo, A. Flacker, Hercílio M. Cavalcanti, R. C. Teixeira, A. Rotondaro, L. Manera","doi":"10.1109/SBMICRO.2015.7298129","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298129","url":null,"abstract":"This paper evaluates the development of Multi-Chip Module Deposited (MCM-D) technology using photosensitive benzocyclobutene (BCB) to produce passive devices. The polymer was used as the dielectric and Ni-P/Au was used as the conductor film. The resistors' sheet resistance was measured with both TLM and direct measurement while the measurements of the capacitors and inductors required the usage of a Vector Network Analyzer (VNA) and treatment of the obtained s-parameters matrix in order to extract the values of both the capacitances and inductances.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124420695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/SBMICRO.2015.7298139
R. A. Romero, R. Feitoza, C. Rambo, F. Sousa
In this paper we propose a wireless transducer, conceived as part of a wireless sensing tag working on the UHF RFID band. The transducer works both as antenna for wireless communication with a dedicated reader, and as sensing element. It is based on a small loop antenna loaded with a split-ring resonator in a complete single-layer design. Two proof-of-concept prototypes were fabricated, one on FR4 and the other on paper substrates. Both prototypes were easily adapted to work as humidity sensors, and measurements results showed the suitability of the transducer for low-cost wireless sensing applications.
{"title":"Wireless transducer based on split-ring resonator","authors":"R. A. Romero, R. Feitoza, C. Rambo, F. Sousa","doi":"10.1109/SBMICRO.2015.7298139","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298139","url":null,"abstract":"In this paper we propose a wireless transducer, conceived as part of a wireless sensing tag working on the UHF RFID band. The transducer works both as antenna for wireless communication with a dedicated reader, and as sensing element. It is based on a small loop antenna loaded with a split-ring resonator in a complete single-layer design. Two proof-of-concept prototypes were fabricated, one on FR4 and the other on paper substrates. Both prototypes were easily adapted to work as humidity sensors, and measurements results showed the suitability of the transducer for low-cost wireless sensing applications.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131001254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/SBMICRO.2015.7298135
L. d'Oliveira, R. Doria, Marcelo A. Pavanelo, D. Flandre, M. de Souza
This paper compares the harmonic distortion of n- and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n- and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n- and p-type composite MOSFETs.
{"title":"Effect of channel doping concentration on the harmonic distortion of asymmetric n- and p-type self-cascode MOSFETs","authors":"L. d'Oliveira, R. Doria, Marcelo A. Pavanelo, D. Flandre, M. de Souza","doi":"10.1109/SBMICRO.2015.7298135","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298135","url":null,"abstract":"This paper compares the harmonic distortion of n- and p-type symmetric (S-SC) and asymmetric self-cascode (A-SC) structures of different channel doping concentrations, providing a physic analysis of its behavior. This study is made by experimental measurements of structures composed by n- and p-type MOSFETs taking the second and third order harmonics as figures of merit. For strong inversion, the normalized second order harmonic distortion was better for the A-SC structures composed by devices with lower channel doping concentration on the transistor near the drain for either n- and p-type composite MOSFETs.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130655432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-08-01DOI: 10.1109/SBMICRO.2015.7298126
Guilherme F. M. de Rezende, Mário C. M. M. Souza, N. Frateschi
In this work we present analytical and experimental results indicating that Coupled Mode Theory, unlike the Transfer Matrix Method, may have limitations in predicting the behavior of photonic molecules based on embedded coupled microring cavities. We show that this resonant mode-based approach fails to provide the correct transmission spectrum for some important coupled cavity configurations, although correctly predicting the existence of these modes as eigenstates of the coupled system. The measured transmission spectrum of a CMOS compatible tunable photonic molecule is used to demonstrate this limitation.
{"title":"Limitations of Coupled Mode Theory to model coupled microresonators “dark states”","authors":"Guilherme F. M. de Rezende, Mário C. M. M. Souza, N. Frateschi","doi":"10.1109/SBMICRO.2015.7298126","DOIUrl":"https://doi.org/10.1109/SBMICRO.2015.7298126","url":null,"abstract":"In this work we present analytical and experimental results indicating that Coupled Mode Theory, unlike the Transfer Matrix Method, may have limitations in predicting the behavior of photonic molecules based on embedded coupled microring cavities. We show that this resonant mode-based approach fails to provide the correct transmission spectrum for some important coupled cavity configurations, although correctly predicting the existence of these modes as eigenstates of the coupled system. The measured transmission spectrum of a CMOS compatible tunable photonic molecule is used to demonstrate this limitation.","PeriodicalId":342493,"journal":{"name":"2015 30th Symposium on Microelectronics Technology and Devices (SBMicro)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134533056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：