1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application最新文献
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619248
C. Tran, R. Karlicek, M. Schurman, T. Salagaj, A. Thompson, R. Stall
We have grown high quality InGaN layers and InGaN/GaN multiple quantum wells for blue LED applications. The degree of phase segregation of InGaN in bulk InGaN layers depends on the TMI and TMG flow rates as well as the growth temperature. Even for films without indium droplets on the surface, X-ray diffraction (XRD) reveals the coexistence of different indium compositions in the films. In this case photoluminescence of the films is red-shifted with respect to the wavelength calculated using the indium composition determined by XRD. The same observation is made for the multiple quantum wells, where phase segregation can significantly reduce interface abruptness.
{"title":"Phase separation in bulk InGaN and quantum wells grown by low pressure MOCVD","authors":"C. Tran, R. Karlicek, M. Schurman, T. Salagaj, A. Thompson, R. Stall","doi":"10.1109/LEOSST.1997.619248","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619248","url":null,"abstract":"We have grown high quality InGaN layers and InGaN/GaN multiple quantum wells for blue LED applications. The degree of phase segregation of InGaN in bulk InGaN layers depends on the TMI and TMG flow rates as well as the growth temperature. Even for films without indium droplets on the surface, X-ray diffraction (XRD) reveals the coexistence of different indium compositions in the films. In this case photoluminescence of the films is red-shifted with respect to the wavelength calculated using the indium composition determined by XRD. The same observation is made for the multiple quantum wells, where phase segregation can significantly reduce interface abruptness.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122904728","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619082
R. Michalzik, R. Jager, B. Weigl, M. Grabherr, C. Jung, G. Reiner, K. Ebeling
We report on the optimization of selectively oxidized VCSELs incorporating GaAs quantum wells for multimode emission around 850 nm wavelength. Devices with active diameters between 5 and 12 /spl mu/m show maximum wallplug efficiencies exceeding 55%. Continuous wave operation is achieved up to +185/spl deg/C and the maximum single-mode output power corresponding to 30 dB sidemode suppression ratio is increased to 2.25 mW with layer structures exhibiting reduced index guiding of the optical wave.
{"title":"High efficiency 850 nm wavelength GaAs VCSELs","authors":"R. Michalzik, R. Jager, B. Weigl, M. Grabherr, C. Jung, G. Reiner, K. Ebeling","doi":"10.1109/LEOSST.1997.619082","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619082","url":null,"abstract":"We report on the optimization of selectively oxidized VCSELs incorporating GaAs quantum wells for multimode emission around 850 nm wavelength. Devices with active diameters between 5 and 12 /spl mu/m show maximum wallplug efficiencies exceeding 55%. Continuous wave operation is achieved up to +185/spl deg/C and the maximum single-mode output power corresponding to 30 dB sidemode suppression ratio is increased to 2.25 mW with layer structures exhibiting reduced index guiding of the optical wave.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125686980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619236
X. Li, S. Kim, S. G. Bishop, J. Coleman
Summary form only given. We report on the As incorporation in GaN films by atmospheric pressure MOCVD using AsH/sub 3/ and NH/sub 3/ as the As and N sources, respectively. The effect of growth parameters on the incorporation efficiency, including growth temperature, growth rate, layer thickness, ratio of AsH/sub 3/ and NH/sub 3/ flows for single layer growth, and the effect of growth interruption for multilayer growth, have been investigated. Of particular interest is the incorporation of As at a doping level. The optimum growth condition for the doping of As in GaN producing strong luminescence at a characteristic emission wavelength (/spl sim/480 nm) has been identified. The characteristic emission has been attributed to excitons bound at As isoelectronic impurities. Arsenic (As) concentration and its depth distribution are measured by SIMS. The crystal quality after As incorporation is demonstrated by X-ray diffraction rocking curve. Room temperature and low temperature cathodoluminescence (CL), photoluminescence (PL) spectroscopy and imaging are used to characterize the optical properties. Results will be compared with As ion implanted GaN.
{"title":"On the incorporation of arsenic (As) in GaN films by conventional MOCVD","authors":"X. Li, S. Kim, S. G. Bishop, J. Coleman","doi":"10.1109/LEOSST.1997.619236","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619236","url":null,"abstract":"Summary form only given. We report on the As incorporation in GaN films by atmospheric pressure MOCVD using AsH/sub 3/ and NH/sub 3/ as the As and N sources, respectively. The effect of growth parameters on the incorporation efficiency, including growth temperature, growth rate, layer thickness, ratio of AsH/sub 3/ and NH/sub 3/ flows for single layer growth, and the effect of growth interruption for multilayer growth, have been investigated. Of particular interest is the incorporation of As at a doping level. The optimum growth condition for the doping of As in GaN producing strong luminescence at a characteristic emission wavelength (/spl sim/480 nm) has been identified. The characteristic emission has been attributed to excitons bound at As isoelectronic impurities. Arsenic (As) concentration and its depth distribution are measured by SIMS. The crystal quality after As incorporation is demonstrated by X-ray diffraction rocking curve. Room temperature and low temperature cathodoluminescence (CL), photoluminescence (PL) spectroscopy and imaging are used to characterize the optical properties. Results will be compared with As ion implanted GaN.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125593288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619148
M. Yamaguchi, K. Kudo, H. Yamazaki, T. Sasaki
Wavelength division multiplexed (WDM) lightwave systems are expected to use many wavelength-controlled light sources. The simultaneous fabrication of different wavelength laser diodes (LDs) on a wafer is therefore an important technology which would allow WDM light sources to be prepared at low cost. The lasing wavelengths of these LDs must be precisely controlled to coincide with pre-assigned wavelength grids for WDM systems. Each LD with different wavelength should have uniform lasing characteristics. We developed a new type of wavelength controlled distributed feedback (DFB) LD. Uniform lasing characteristics were demonstrated for 40-channel different wavelength DFB LDs fabricated on one wafer, over a 75 nm-wide wavelength range.
{"title":"Wavelength-controlled DFB LDs for WDM systems","authors":"M. Yamaguchi, K. Kudo, H. Yamazaki, T. Sasaki","doi":"10.1109/LEOSST.1997.619148","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619148","url":null,"abstract":"Wavelength division multiplexed (WDM) lightwave systems are expected to use many wavelength-controlled light sources. The simultaneous fabrication of different wavelength laser diodes (LDs) on a wafer is therefore an important technology which would allow WDM light sources to be prepared at low cost. The lasing wavelengths of these LDs must be precisely controlled to coincide with pre-assigned wavelength grids for WDM systems. Each LD with different wavelength should have uniform lasing characteristics. We developed a new type of wavelength controlled distributed feedback (DFB) LD. Uniform lasing characteristics were demonstrated for 40-channel different wavelength DFB LDs fabricated on one wafer, over a 75 nm-wide wavelength range.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122252458","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619195
D. Francis, C. Chang-Hasnain, M. Kiang, Kam Y. Lau, R. S. Muller
In this talk, we review the recent development of a novel individually addressable beam steering diode laser array; the fan laser array. We show that the fan laser array outperforms parallel laser arrays because it simultaneously reduces the effective aperture of the laser array and the crosstalk between array elements.
{"title":"Beam steering laser arrays and applications in 2D laser scanning","authors":"D. Francis, C. Chang-Hasnain, M. Kiang, Kam Y. Lau, R. S. Muller","doi":"10.1109/LEOSST.1997.619195","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619195","url":null,"abstract":"In this talk, we review the recent development of a novel individually addressable beam steering diode laser array; the fan laser array. We show that the fan laser array outperforms parallel laser arrays because it simultaneously reduces the effective aperture of the laser array and the crosstalk between array elements.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128271838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619205
S. Kinugawa, T. Saito, S. Mattori, K. Miyagi, A. Taniguchi
This paper reports a compound cavity semiconductor laser (CCSL) with a feedback cavity added to the external cavity laser. This scheme improves the selectivity of the external cavity mode. As a result: the CCSL has long-term wavelength stability and continuous wavelength tuning without suffering from mechanical instability.
{"title":"Compound cavity semiconductor laser (CCSL)","authors":"S. Kinugawa, T. Saito, S. Mattori, K. Miyagi, A. Taniguchi","doi":"10.1109/LEOSST.1997.619205","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619205","url":null,"abstract":"This paper reports a compound cavity semiconductor laser (CCSL) with a feedback cavity added to the external cavity laser. This scheme improves the selectivity of the external cavity mode. As a result: the CCSL has long-term wavelength stability and continuous wavelength tuning without suffering from mechanical instability.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130427969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619149
E. Murphy
Summary form only given. Guided wave switch arrays are currently being utilized in WDM network experiments. The combination of switching and WDM technologies in optical networks allow new system capabilities such as rapid restoration and wavelength provisioning. In this paper, we will review the attributes of LiNbO/sub 3/ polarization independent electro optical switches and describe recent devices that have been developed for use in experimental switching networks.
{"title":"Applications of integrated optic switches in WDM networks","authors":"E. Murphy","doi":"10.1109/LEOSST.1997.619149","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619149","url":null,"abstract":"Summary form only given. Guided wave switch arrays are currently being utilized in WDM network experiments. The combination of switching and WDM technologies in optical networks allow new system capabilities such as rapid restoration and wavelength provisioning. In this paper, we will review the attributes of LiNbO/sub 3/ polarization independent electro optical switches and describe recent devices that have been developed for use in experimental switching networks.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133376987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619233
M.A.L. Johnson, Zhonghai Yu, N. El-Masry, J. Cook, J. Schetzina
GaN has been grown by MBE at growth rates up to 1 /spl mu/m/hr and at temperatures up to 1000 C using a new rf nitrogen plasma source developed by EPI Inc. The EPI source employs a pyrolytic boron nitride plasma reaction chamber that eliminates gas leakage. This "unibulb" construction gives rise to higher pressures and longer confinement times within the reaction chamber. Optical IR emission spectra show that the nitrogen plasma is very rich in nitrogen atoms.
{"title":"MBE growth of GaN","authors":"M.A.L. Johnson, Zhonghai Yu, N. El-Masry, J. Cook, J. Schetzina","doi":"10.1109/LEOSST.1997.619233","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619233","url":null,"abstract":"GaN has been grown by MBE at growth rates up to 1 /spl mu/m/hr and at temperatures up to 1000 C using a new rf nitrogen plasma source developed by EPI Inc. The EPI source employs a pyrolytic boron nitride plasma reaction chamber that eliminates gas leakage. This \"unibulb\" construction gives rise to higher pressures and longer confinement times within the reaction chamber. Optical IR emission spectra show that the nitrogen plasma is very rich in nitrogen atoms.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129308005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619226
D. Kessler
Laser printing is an active and growing field. Many different lasers are used, from low-power single mode to high-power laser bars. Different printing applications will be described with emphasis on the required characteristic of the laser.
{"title":"Applications of lasers for printing","authors":"D. Kessler","doi":"10.1109/LEOSST.1997.619226","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619226","url":null,"abstract":"Laser printing is an active and growing field. Many different lasers are used, from low-power single mode to high-power laser bars. Different printing applications will be described with emphasis on the required characteristic of the laser.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133647391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-08-11DOI: 10.1109/LEOSST.1997.619179
D. Copeland, S. Tabatabaei, S. Merritt, S. Didde, M. Dagenais, Y. Chen, D. Stone, A. Springthorpe
We report on the development of a 4 channel, 10 Gbps/channel WDM laser transmitter module. The module includes four DFB MQW lasers operating in the 1550 nm fiber window. The small-signal characteristics of the DFB laser were measured from 50 MHz to 18 GHz, and a small-signal bias-dependent model was implemented using Libra software. This model was used with measured characteristics of the driver to analyze their interaction and predict the combined response. The drivers employ a commercially available HBT based monolithic amplifier. The electrical cross-talk of the drivers is presented. 10 Gbps waveforms are presented for the drive output and the optical signal.
{"title":"Design of a 40 Gbps WDM laser module","authors":"D. Copeland, S. Tabatabaei, S. Merritt, S. Didde, M. Dagenais, Y. Chen, D. Stone, A. Springthorpe","doi":"10.1109/LEOSST.1997.619179","DOIUrl":"https://doi.org/10.1109/LEOSST.1997.619179","url":null,"abstract":"We report on the development of a 4 channel, 10 Gbps/channel WDM laser transmitter module. The module includes four DFB MQW lasers operating in the 1550 nm fiber window. The small-signal characteristics of the DFB laser were measured from 50 MHz to 18 GHz, and a small-signal bias-dependent model was implemented using Libra software. This model was used with measured characteristics of the driver to analyze their interaction and predict the combined response. The drivers employ a commercially available HBT based monolithic amplifier. The electrical cross-talk of the drivers is presented. 10 Gbps waveforms are presented for the drive output and the optical signal.","PeriodicalId":344325,"journal":{"name":"1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application","volume":"225 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122192126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application
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