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2006 IEEE International SOC Conference最新文献

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A 24-mW 0.02-mm2 1.5-GHz DLL-Based Frequency Multiplier in 130-nm CMOS 一种采用130nm CMOS的24mw 0.02 mm2 1.5 ghz dll倍频器
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283893
B. Mesgarzadeh, A. Alvandpour
This paper presents a low-power small-area DLL-based frequency multiplier. Instead of using edge combiner-based clock synthesis scheme, the proposed frequency multiplier utilizes a ring oscillator, which is controlled by a DLL. An injection-locked slave ring oscillator is used for jitter suppression. The implementation of the proposed structure in 130-nm CMOS occupies an area of 0.02 mm2. It operates in the frequency range of 100 MHz to 1.5 GHz while consuming 24-mW power from a 1.2-V supply at 1.5 GHz. The measured output phase noise at 1.5 GHz is -100.1 dBc/Hz at a 4-MHz frequency offset.
提出了一种基于低功耗小面积dll的倍频器。该倍频器采用了由DLL控制的环形振荡器,而不是基于边缘合成器的时钟合成方案。采用注入锁定从环振荡器抑制抖动。在130纳米CMOS中实现所提出的结构占用0.02 mm2的面积。它在100 MHz至1.5 GHz的频率范围内工作,同时从1.5 GHz的1.2 v电源消耗24 mw功率。在4 mhz频偏下,测量到的1.5 GHz输出相位噪声为-100.1 dBc/Hz。
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引用次数: 5
A Reconfigurable CMOS Power Amplifier Operating from 0.9 TO 2.4 GHZ for WPAN Application 一种工作频率为0.9 ~ 2.4 GHZ的可重构CMOS功率放大器
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283846
Seok-Oh Yun, Hyung-Joun Yoo
A reconfigurable CMOS power amplifier for WPAN application is designed in CMOS 0.25 mum technology. It is composed of driver stage, power stage, interstage matching, and output matching stages. Power amplifier can be operated in various frequencies by controlling interstage matching and has the characteristic at required frequencies. The proposed power amplifier has 42-57% power added efficiency and 21.8-27.5 dB gain characteristic at frequencies of 0.9-2.4 GHz with 20 dBm output power.
设计了一种适用于WPAN应用的可重构CMOS功率放大器。它由驱动级、功率级、级间匹配和输出匹配级组成。功率放大器可以通过控制级间匹配在不同频率下工作,并具有所需频率下的特性。该功率放大器在0.9-2.4 GHz频率和20dbm输出功率下具有42-57%的功率附加效率和21.8-27.5 dB增益特性。
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引用次数: 4
Stochastic Glitch Estimation and Path Balancing for Statistical Optimization 统计优化中的随机故障估计与路径平衡
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283851
Hosun Shin, Naeun Zang, Juho Kim
Statistical power optimization using the probabilistic delay model is introduced in this paper. We propose a new method for power optimization that uses path balancing based on stochastic estimation of glitch in statistical static timing analysis (SSTA). The proposed method estimates the probability of glitch occurrence using tightness probability of each node in timing graph. In addition, we propose efficient gate sizing technique for glitch reduction using accurate calculation of sizing effect in delay considering probability of glitch occurrence. The efficiency of the proposed method has been verified on ISCAS 85 benchmark circuits with 0.16 mum model parameters. Experimental results show up to 8.6% of accuracy improvement in glitch estimation and 9.5% of optimization improvement.
本文介绍了基于概率延迟模型的统计功率优化方法。提出了一种基于统计静态时序分析(SSTA)中故障随机估计的路径平衡功率优化方法。该方法利用时序图中各节点的紧密度概率来估计故障发生的概率。此外,我们还提出了一种有效的栅极尺寸减小技术,该技术在考虑故障发生概率的情况下,通过精确计算延迟中的尺寸效应来减少故障。在模型参数为0.16 μ m的ISCAS 85基准电路上验证了该方法的有效性。实验结果表明,该方法的误差估计精度提高8.6%,优化精度提高9.5%。
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引用次数: 8
On-Chip Distributed Architectures 片上分布式架构
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283911
T. Seceleanu, A. Jantsch, H. Tenhunen
Currently, the semiconductor industry continues to develop and implement smaller technology nodes, creating the premises for increasingly more powerful applications to find support within the limits of single chip boundaries. Moreover, as technological sizes continue to decrease, interconnect becomes one of the main design constraints, which dominates the power consumption and degrades the performance due to its poor scalability. Thus, some of the major problems in actually delivering complex system-on-chip designs may be identified as: a) global interconnects turn un-manageable (electromigration, voltage drop, on-chip variations, noise constraints etc), interconnect dominates the chip's cost and performance; b) the inability of the designer to track the Moore curve, resulting in "bad" design flows, requiring rework and iteration of design cycles; c) dependability issues caused by effects at submicron technological figures, mixed-signal coupling, availability of pre-designed components to match the specific requirements, etc; d) power consumption, power and clock distribution, scalability. Some of the above problems are tackled by reuse and intellectual property (IP) based design. At the same time, alternative architectures are brought to light, in order to support ever increasing requirements concerning design features like performance, power consumption, adaptability, reusability. In general, these novel architectures try to extract maximum of benefits from current technologies, with respect to the mentioned design characteristics, while also providing a smooth transition to future ones. In this tutorial, we concentrate on two architectural solutions to the above stated challenges. We address issues related to segmented bus and network on-chip systems, starting from motivational background, continuing with technological requirements and possibilities, communication mechanisms, towards design methodologies and application perspectives.
目前,半导体行业继续开发和实施更小的技术节点,为越来越强大的应用创造了前提,以在单芯片边界的限制内找到支持。此外,随着技术尺寸的不断缩小,互连成为主要的设计约束之一,它主导了功耗,并因其较差的可扩展性而降低了性能。因此,实际交付复杂的片上系统设计中的一些主要问题可能被确定为:a)全局互连变得无法管理(电迁移,电压降,片上变化,噪声限制等),互连主导了芯片的成本和性能;b)设计师无法跟踪摩尔曲线,导致“糟糕”的设计流程,需要返工和设计周期的迭代;C)由亚微米工艺参数、混合信号耦合、预先设计的元件是否符合特定要求等影响引起的可靠性问题;D)功耗、功耗和时钟分布、可扩展性。基于重用和知识产权(IP)的设计可以解决上述一些问题。与此同时,为了支持性能、功耗、适应性、可重用性等设计特性方面不断增长的需求,替代架构也开始出现。一般来说,这些新颖的体系结构试图从当前技术中提取最大的好处,考虑到上述设计特征,同时也提供了向未来技术的平滑过渡。在本教程中,我们将集中讨论针对上述挑战的两种体系结构解决方案。我们将讨论与分段总线和网络片上系统相关的问题,从动机背景开始,继续讨论技术要求和可能性,通信机制,设计方法和应用前景。
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引用次数: 0
A General Method to VLSI Polyphase Filter Analysis and Design for Integrated RF Applications 集成射频应用中VLSI多相滤波器分析与设计的一般方法
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283837
Hongjiang Song
A general approach to the analysis and design of polyphase filters is presented. This method, which is based on the symmetry property and the polyphase signal constraint of the VLSI polyphase filter circuit structures, provides a systematic and significantly simplified path for the analysis and design of various types of VLSI polyphase filters.
介绍了多相滤波器分析与设计的一般方法。该方法基于VLSI多相滤波器电路结构的对称性和多相信号约束,为各种类型的VLSI多相滤波器的分析和设计提供了系统的、显著简化的路径。
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引用次数: 3
Fuse Area Reduction Based on Quantitative Yield Analysis and Effective Chip Cost 基于定量良率分析和有效芯片成本的熔丝面积缩减
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283888
A. Garg, P. Dubey
Embedded memory yield dominates manufacturing yield of the chip and yield enhancement techniques for embedded memories are important for entire SoC yield increase. Laser fuses and anti fuses are two commonly used mechanisms for hard repair and they consume a lot of area. Analysis based upon yield prediction methods as well as silicon yield database shows that putting fuse to repair all the memories on the chip is not worth the expense, when only few fuse bits are needed. In this paper, we present the background for fuse reduction (cost analysis) and propose methodology to compress total number of fuses to repair the memories such that cost reduction through hard repair circuitry is maximized. The idea is to take into consideration factors like memory yield, fuse yield and repair logic yield, together with the number of memories on chip, to finally decide the fuse compression ratio.
嵌入式存储器的良率在芯片的制造良率中占主导地位,嵌入式存储器的良率提高技术对整个SoC的良率提高至关重要。激光引信和反引信是两种常用的硬修复机构,它们消耗的面积很大。基于良率预测方法和硅良率数据库的分析表明,当只需要少量的保险丝时,在芯片上安装保险丝来修复所有的存储器是不值得的。在本文中,我们介绍了保险丝减少(成本分析)的背景,并提出了压缩保险丝总数以修复存储器的方法,从而通过硬修复电路最大限度地降低成本。其思路是综合考虑存储器产率、熔断器产率、修复逻辑产率等因素,结合芯片上存储器的数量,最终确定熔断器压缩比。
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引用次数: 2
Effects of Interconnect Process Variations on Signal Integrity 互连过程变化对信号完整性的影响
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283898
E. Demircan
With the development of new sub micron very large scale integration (VLSI) technologies the importance of interconnect parasitics on delay and noise has been in an ever increasing trend [1]. Consequently, the variations in interconnect parameters have a larger impact on final timing and functional yield of the product. Therefore, it is necessary to handle process variations as accurately as possible in layout parasitic extraction (LPE), static timing (ST) and signal integrity (SI) in deep sub-micron designs. In this paper we analyze the sources of process variation that induce interconnect parasitic variations. We present the relatively important ones through the usage of a response surface model (RSM). It was found that, in addition to metal thickness and width variation, damaged dielectric regions on the side of the metal lines are important contributions to cross-talk. We demonstrate the importance of accounting for the correlation between parameters for a given interconnect line such as interconnect line resistance and thickness. Finally we present a Monte Carlo (MC) methodology based on the RSM which can significantly reduce separation of corners and lead to tighter product specs and hence smaller die area and lower power.
随着新型亚微米超大规模集成电路(VLSI)技术的发展,互连寄生对时延和噪声的影响越来越大[1]。因此,互连参数的变化对产品的最终时间和功能良率有较大的影响。因此,在深亚微米设计中,有必要尽可能准确地处理布局寄生提取(LPE)、静态时序(ST)和信号完整性(SI)中的工艺变化。本文分析了引起互连寄生变化的过程变化的来源。我们通过使用响应面模型(RSM)给出了相对重要的一些问题。研究发现,除了金属厚度和宽度的变化外,金属线侧的介电损伤区域也是串扰的重要因素。我们证明了考虑给定互连线的参数(如互连线电阻和厚度)之间的相关性的重要性。最后,我们提出了一种基于RSM的蒙特卡罗(MC)方法,该方法可以显着减少角的分离,并导致更紧凑的产品规格,因此更小的模具面积和更低的功耗。
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引用次数: 11
Embedded Controllers for Solving Complex Industry Applications 用于解决复杂工业应用的嵌入式控制器
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283870
Juergen Saalmueller, J. Würtz
Complex industry automation as well as complex compute nodes like high-end servers require an infrastructure for maintenance and control. An off-the-shelf embedded controller is usually the first choice for such purposes. This approach is challenged for complex applications by the fact that a large amount of distributed industry standard interfaces has to be controlled and realtime responses have to be provided. In our paper we show a concept solving the above challenges. Our solution is based on an embedded PowerPC 440* controller that allows for flexible attachment and control of hundreds of industry standard interfaces like digital I/O, I2C, JTAG, RS232/422 etc. The solution further allows a redundant implementation of controllers for fail save applications. This approach was implemented first in a set of IBM servers and can be generalized to other application areas like compute clusters or industry automation. We describe the challenges in complex applications for system control, show our solutions on a system level and finally describe how a concrete SoC chip is realized in PowerPC* CoreConnect* technology.
复杂的工业自动化以及复杂的计算节点(如高端服务器)需要用于维护和控制的基础设施。现成的嵌入式控制器通常是此类目的的首选。对于复杂的应用程序,这种方法受到了挑战,因为必须控制大量的分布式工业标准接口,并且必须提供实时响应。在本文中,我们提出了一个解决上述挑战的概念。我们的解决方案基于嵌入式PowerPC 440*控制器,允许灵活地连接和控制数百个行业标准接口,如数字I/O, I2C, JTAG, RS232/422等。该解决方案还允许为失败保存应用程序冗余实现控制器。这种方法首先在一组IBM服务器中实现,并且可以推广到其他应用程序领域,如计算集群或工业自动化。我们描述了复杂系统控制应用中的挑战,在系统级展示了我们的解决方案,最后描述了如何在PowerPC* CoreConnect*技术中实现具体的SoC芯片。
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引用次数: 3
A 120nm CMOS Fully Differential Rail-to-Rail I/O Opamp with Highly Constant Signal Behavior 具有高度恒定信号行为的120nm CMOS全差分轨对轨I/O运放
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283831
W. Yan, H. Zimmermann
This paper proposes a fully differential opamp implemented in 120 nm digital CMOS technology, with rail-to-rail input common-mode range, realized by a novel approach of constant small- and large-signal behavior control. The small-signal response is improved to an extremely slim deviation of 2.4%. Also a new class-AB rail-to-rail output stage is designed, targeting at high drive capability down to 33Omega resistive load, high power transfer efficiency and linearity. A modified measurement circuitry for fully differential opamps is introduced as well.
本文提出了一种采用120 nm数字CMOS技术实现的全差分运放,其轨到轨输入共模范围采用恒定小信号和大信号行为控制的新颖方法实现。小信号响应改进到2.4%的极小偏差。此外,还设计了新的ab级轨对轨输出级,目标是高驱动能力,低至33Omega电阻负载,高功率传输效率和线性度。本文还介绍了一种改进的全差分运放大器测量电路。
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引用次数: 1
Method for Managing Electromigration in SOC'S When Designing for Both Reliability and Manufacturing SOC可靠性设计与制造时的电迁移管理方法
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283855
K. Chow, D. Abercrombie, M. Basel
Like design for manufacturing (DFM), design for reliability (DFR) of a chip identifies design features that are potentially vulnerable to various physical effects that can degrade circuit performance. The difference is that DFR attempts to model long-term effects, such as electromigration. Tools extract design information (resistances and current densities) and apply the data to simulation tools to estimate the degree of reliability. The weakness in this methodology is that these extraction technologies assume that the "as drawn" feature is a good representation of the "as manufactured" chip. DFM has shown that individual features on the "as manufactured" chip can vary dramatically from the intended layout in both critical dimension and thickness. The technologies developed to identify and characterize these DFM variations need to be incorporated into the DFR tools to accurately predict the long-term life of SoC nanometer designs.
与面向制造的设计(DFM)一样,芯片的可靠性设计(DFR)确定了可能容易受到各种物理效应影响的设计特征,这些物理效应会降低电路性能。不同之处在于DFR试图模拟长期影响,比如电迁移。工具提取设计信息(电阻和电流密度),并将数据应用于仿真工具,以估计可靠性程度。这种方法的弱点在于,这些提取技术假设“绘制”的特征是“制造”芯片的良好代表。DFM已经表明,“制造”芯片上的个别特征在关键尺寸和厚度上都可能与预期的布局有很大的不同。识别和表征这些DFM变化的技术需要整合到DFR工具中,以准确预测SoC纳米设计的长期寿命。
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引用次数: 8
期刊
2006 IEEE International SOC Conference
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