首页 > 最新文献

2006 IEEE International SOC Conference最新文献

英文 中文
Substrate and Ground Noise Interactions in Mixed-Signal Circuits 混合信号电路中的基片和地噪声相互作用
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283901
E. Salman, E. Friedman, R. Secareanu
The interaction of the substrate with the inductive on-chip ground distribution network is analyzed in this paper. A transistor level approach is presented to illustrate the effects of the substrate on ground noise. The substrate can have a significant effect on ground noise due to the inductance of the ground lines. For a CMOS inverter, the substrate can reduce negative peak ground noise by 49% during the high-to-low output transition. The substrate, however, increases the positive peak ground noise by 72% during the low-to-high output transition. The effect of the substrate should therefore not be neglected if the inductance of the on-chip ground distribution network is non-negligible. Furthermore, conventional triangle or trapezoid type current demand estimations of the nonlinear circuits are shown to be significantly inaccurate if the ground lines exhibit inductive behavior.
本文分析了基片与感应片上配电网的相互作用。提出了一种晶体管级的方法来说明衬底对地噪声的影响。由于地线的电感,基片对地噪声有很大的影响。对于CMOS逆变器,衬底可以在高到低输出转换期间将负峰值地噪声降低49%。然而,在低到高输出转换期间,衬底增加了72%的正峰值地噪声。因此,如果片上接地配电网的电感不可忽略,则不应忽略衬底的影响。此外,如果地线表现出电感行为,则非线性电路的传统三角形或梯形电流需求估计显着不准确。
{"title":"Substrate and Ground Noise Interactions in Mixed-Signal Circuits","authors":"E. Salman, E. Friedman, R. Secareanu","doi":"10.1109/SOCC.2006.283901","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283901","url":null,"abstract":"The interaction of the substrate with the inductive on-chip ground distribution network is analyzed in this paper. A transistor level approach is presented to illustrate the effects of the substrate on ground noise. The substrate can have a significant effect on ground noise due to the inductance of the ground lines. For a CMOS inverter, the substrate can reduce negative peak ground noise by 49% during the high-to-low output transition. The substrate, however, increases the positive peak ground noise by 72% during the low-to-high output transition. The effect of the substrate should therefore not be neglected if the inductance of the on-chip ground distribution network is non-negligible. Furthermore, conventional triangle or trapezoid type current demand estimations of the nonlinear circuits are shown to be significantly inaccurate if the ground lines exhibit inductive behavior.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128881462","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
High-performance energy-efficient memory circuit technologies for sub-45nm technologies 用于45纳米以下技术的高性能节能存储电路技术
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283907
A. Agarwal, R. Krishnamurthy
This tutorial discusses challenges and design solutions for high-performance energy efficient memory/register file circuit design. Technology scaling trends for leakage and process variation for sub-45nm technologies are analyzed, with special emphasis on their impact on wide fan in OR gates found in high performance register file. Novel high-speed and leakage/process tolerant circuits are reviewed. Leakage/process sensors which enable these processes compensating techniques are presented.
本教程讨论了高性能节能存储器/寄存器文件电路设计的挑战和设计解决方案。分析了45纳米以下技术的泄漏和工艺变化的技术缩放趋势,特别强调了它们对高性能寄存器文件中OR门宽扇的影响。综述了新型高速、耐漏/耐制程电路。泄漏/过程传感器,使这些过程补偿技术提出。
{"title":"High-performance energy-efficient memory circuit technologies for sub-45nm technologies","authors":"A. Agarwal, R. Krishnamurthy","doi":"10.1109/SOCC.2006.283907","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283907","url":null,"abstract":"This tutorial discusses challenges and design solutions for high-performance energy efficient memory/register file circuit design. Technology scaling trends for leakage and process variation for sub-45nm technologies are analyzed, with special emphasis on their impact on wide fan in OR gates found in high performance register file. Novel high-speed and leakage/process tolerant circuits are reviewed. Leakage/process sensors which enable these processes compensating techniques are presented.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128900481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Performance Improvements through Timing Driven Reconfiguration of Black-Boxes in Platform FPGAs 平台fpga中黑盒时序驱动重构的性能改进
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283857
P. Sundararajan, S. Krishnamurthy, N. Vijaykrishnan, K. Chaudhary, R. Jayaraman
Platform FPGAs have introduced complex reconfigurable black-boxes for complete system on chip implementation. With rising expectations from these architectures there is a need to perform optimizations across the FPGA slice fabric and the newly introduced black boxes to maximize performance gains. In this paper, we discuss a timing driven reconfiguration technique to improve performance of DSP designs on platform FPGAs by (i) optimal register placement algorithms within the DSP 48 block and (ii) timing driven mechanism to have maximal pipeline depth.
平台fpga为完整的片上系统实现引入了复杂的可重构黑盒。随着对这些架构的期望越来越高,需要跨FPGA切片结构和新引入的黑盒进行优化,以最大限度地提高性能。在本文中,我们讨论了一种时序驱动的重构技术,通过(i) DSP 48块内的最佳寄存器放置算法和(ii)时序驱动机制来提高平台fpga上DSP设计的性能。
{"title":"Performance Improvements through Timing Driven Reconfiguration of Black-Boxes in Platform FPGAs","authors":"P. Sundararajan, S. Krishnamurthy, N. Vijaykrishnan, K. Chaudhary, R. Jayaraman","doi":"10.1109/SOCC.2006.283857","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283857","url":null,"abstract":"Platform FPGAs have introduced complex reconfigurable black-boxes for complete system on chip implementation. With rising expectations from these architectures there is a need to perform optimizations across the FPGA slice fabric and the newly introduced black boxes to maximize performance gains. In this paper, we discuss a timing driven reconfiguration technique to improve performance of DSP designs on platform FPGAs by (i) optimal register placement algorithms within the DSP 48 block and (ii) timing driven mechanism to have maximal pipeline depth.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127505555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Pulse-Based Full-Band UWB Transceiver SoC in 0.18μm SiGe BiCMOS 基于0.18μm SiGe BiCMOS的脉冲全频带超宽带收发器SoC
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283847
Haolu Xie, S. Fan, Xin Wang, Albert Z. H. Wang, Zhihua Wang, Hongyi Chen
In this paper, a single-chip pulse-based, non- carrier, full-band, low power ultra wideband (UWB) transceiver system-on-a-chip (SoC) for high data rate wireless video/audio/multimedia streaming applications is presented. This UWB SoC features a single full-band (7.5 GHz bandwidth from 3.1 GHz to 10.6 GHz), pulse-based non-carrier architecture to achieve high throughput (>100 Mbps) and high simplicity. It consists of low-noise amplifier (LNA), correlator, integrator, pulse generator, power switches and timing controller. This digital-ready UWB SoC features an on-chip analog-to-digital converter (ADC). The SoC uses BPSK modulation, Gaussian pulsing, and a global switching technique for power reduction. As the result, the average power consumption of the transceiver (no ADC) is 6 mW only. The SoC is designed in a commercial 0.18 mum SiGe BiCMOS technology.
本文提出了一种基于脉冲的单芯片、无载波、全频带、低功耗超宽带(UWB)收发器系统单片(SoC),用于高数据速率无线视频/音频/多媒体流应用。该UWB SoC采用单全频段(3.1 GHz至10.6 GHz的7.5 GHz带宽),基于脉冲的非载波架构,可实现高吞吐量(>100 Mbps)和高度简单性。它由低噪声放大器(LNA)、相关器、积分器、脉冲发生器、功率开关和定时控制器组成。这个数字就绪的UWB SoC具有片上模数转换器(ADC)。SoC使用BPSK调制、高斯脉冲和全局开关技术来降低功耗。因此,收发器(无ADC)的平均功耗仅为6 mW。该SoC采用商用0.18 μ SiGe BiCMOS技术设计。
{"title":"A Pulse-Based Full-Band UWB Transceiver SoC in 0.18μm SiGe BiCMOS","authors":"Haolu Xie, S. Fan, Xin Wang, Albert Z. H. Wang, Zhihua Wang, Hongyi Chen","doi":"10.1109/SOCC.2006.283847","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283847","url":null,"abstract":"In this paper, a single-chip pulse-based, non- carrier, full-band, low power ultra wideband (UWB) transceiver system-on-a-chip (SoC) for high data rate wireless video/audio/multimedia streaming applications is presented. This UWB SoC features a single full-band (7.5 GHz bandwidth from 3.1 GHz to 10.6 GHz), pulse-based non-carrier architecture to achieve high throughput (>100 Mbps) and high simplicity. It consists of low-noise amplifier (LNA), correlator, integrator, pulse generator, power switches and timing controller. This digital-ready UWB SoC features an on-chip analog-to-digital converter (ADC). The SoC uses BPSK modulation, Gaussian pulsing, and a global switching technique for power reduction. As the result, the average power consumption of the transceiver (no ADC) is 6 mW only. The SoC is designed in a commercial 0.18 mum SiGe BiCMOS technology.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127606877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Trace-Driven Validation Methodology for Multi-Processor SOCS 一种多处理器soc的跟踪驱动验证方法
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283869
J. Bhadra, E. Trofimova, Leonard J. Giordano, M. Abadir
Multi-processor systems-on-chip pose a great challenge to validation due to their size and complexity. We approach the problem of MP SoC validation through a tool that uses a reusable scheme to effectively leverage a simulation-based abstraction scheme. Our tool checks an abstract representation of the system across traces obtained by simulating a system level implementation and analyzes the results for correctness. We have effectively used the tool on various live MP SoC design projects.
片上多处理器系统由于其尺寸和复杂性给验证带来了巨大的挑战。我们通过一个工具来解决MP SoC验证问题,该工具使用可重用方案来有效地利用基于仿真的抽象方案。我们的工具通过模拟系统级实现来检查系统的抽象表示,并分析结果的正确性。我们已经在各种实时MP SoC设计项目中有效地使用了该工具。
{"title":"A Trace-Driven Validation Methodology for Multi-Processor SOCS","authors":"J. Bhadra, E. Trofimova, Leonard J. Giordano, M. Abadir","doi":"10.1109/SOCC.2006.283869","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283869","url":null,"abstract":"Multi-processor systems-on-chip pose a great challenge to validation due to their size and complexity. We approach the problem of MP SoC validation through a tool that uses a reusable scheme to effectively leverage a simulation-based abstraction scheme. Our tool checks an abstract representation of the system across traces obtained by simulating a system level implementation and analyzes the results for correctness. We have effectively used the tool on various live MP SoC design projects.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121958118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Integration of Configurable Processors in a Multiprocessor Platform 多处理器平台中可配置处理器的集成
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283885
S. Provost, Bruno Lavigueur, G. Bois, G. Nicolescu
To reach current SoCs constraint of flexibility without loosing performance, system designers need to avoid custom logic and replace it by multiple processors and custom instruction extensions. In this paper, we bring a new codesign methodology which targets MPSoC comprising of multiple configurable processors. By applying this methodology to an MPEG-4 encoder we show that the approach gives a speedup factor that is almost linear with the number of processors.
为了在不损失性能的情况下达到当前soc灵活性的限制,系统设计人员需要避免自定义逻辑,并用多个处理器和自定义指令扩展来取代它。在本文中,我们提出了一种新的协同设计方法,该方法针对由多个可配置处理器组成的MPSoC。通过将此方法应用于MPEG-4编码器,我们发现该方法的加速因子几乎与处理器数量成线性关系。
{"title":"Integration of Configurable Processors in a Multiprocessor Platform","authors":"S. Provost, Bruno Lavigueur, G. Bois, G. Nicolescu","doi":"10.1109/SOCC.2006.283885","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283885","url":null,"abstract":"To reach current SoCs constraint of flexibility without loosing performance, system designers need to avoid custom logic and replace it by multiple processors and custom instruction extensions. In this paper, we bring a new codesign methodology which targets MPSoC comprising of multiple configurable processors. By applying this methodology to an MPEG-4 encoder we show that the approach gives a speedup factor that is almost linear with the number of processors.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131885283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Robust Sense Amplifier Design under Random Dopant Fluctuations in Nano-Scale CMOS Technologies 纳米级CMOS技术中随机掺杂波动下的鲁棒感测放大器设计
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283894
Joyce Yeung, H. Mahmoodi
Variation in transistor characteristics and particularly threshold voltage (Vt) has emerged as a major challenge for circuit design in scaled technologies. Process variations result in increased mismatch among neighboring transistors which can affect the correct functionality of circuits such as sense amplifiers. In this paper, we will analyze the impact of process variations on sense amplifier circuits in detail. We will explore statistical design and optimization techniques based on transistor sizing to improve the reliability of sense amplifiers under process variations. Furthermore, we will exploit dual Vt option to enhance the sense amplifier robustness. According to simulation results in a 70 nm process, by optimal transistor sizing and dual Vt assignment, failure probability of sense amplifiers can be greatly reduced (by more than 80%).
晶体管特性的变化,特别是阈值电压(Vt)已经成为电路设计的主要挑战。工艺变化导致相邻晶体管之间的失配增加,从而影响传感器放大器等电路的正确功能。在本文中,我们将详细分析工艺变化对感测放大电路的影响。我们将探索基于晶体管尺寸的统计设计和优化技术,以提高工艺变化下感测放大器的可靠性。此外,我们将利用双Vt选项来增强感测放大器的鲁棒性。在70 nm制程的仿真结果中,通过优化晶体管尺寸和双Vt分配,可大大降低感测放大器的失效概率(80%以上)。
{"title":"Robust Sense Amplifier Design under Random Dopant Fluctuations in Nano-Scale CMOS Technologies","authors":"Joyce Yeung, H. Mahmoodi","doi":"10.1109/SOCC.2006.283894","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283894","url":null,"abstract":"Variation in transistor characteristics and particularly threshold voltage (Vt) has emerged as a major challenge for circuit design in scaled technologies. Process variations result in increased mismatch among neighboring transistors which can affect the correct functionality of circuits such as sense amplifiers. In this paper, we will analyze the impact of process variations on sense amplifier circuits in detail. We will explore statistical design and optimization techniques based on transistor sizing to improve the reliability of sense amplifiers under process variations. Furthermore, we will exploit dual Vt option to enhance the sense amplifier robustness. According to simulation results in a 70 nm process, by optimal transistor sizing and dual Vt assignment, failure probability of sense amplifiers can be greatly reduced (by more than 80%).","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124679670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Design of Ultra-Low Power Combinational Standard Library Cells Using A Novel Leakage Reduction Methodology 超低功耗组合标准库电池的新型减漏方法设计
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283854
P. Lakshmikanthan, Karan Sahni, A. Nunez
Leakage power loss is a major concern as it drains the battery even when a circuit is completely idle. Efficient leakage control mechanisms are necessary to maximize battery life. In this paper, the design and characterization of an ultra-low power combinational CMOS standard cell library is presented. A novel technique that achieves cancellation of leakage effects in both the pull-up network (PUN) as well as the pull-down network (PDN) of CMOS cells is presented. A combination of high-VT and standard-VT sleep transistors is used for voltage balancing in the PUN and PDN paths. Experimental results show significant leakage power savings (average of 21X for a 180 nm process technology at 27degC) in CMOS library cells employing this sleep-circuitry when compared to standard CMOS cells.
漏电损耗是一个主要问题,因为即使电路完全空闲,它也会耗尽电池。有效的泄漏控制机制是必要的,以最大限度地延长电池寿命。本文介绍了一种超低功耗组合CMOS标准单元库的设计与表征。提出了一种在CMOS电池的上拉网络(PUN)和下拉网络(PDN)中同时实现漏损抵消的新技术。在PUN和PDN路径中,使用高vt和标准vt睡眠晶体管的组合来实现电压平衡。实验结果表明,与标准CMOS电池相比,采用这种睡眠电路的CMOS库电池显着节省泄漏功率(在27℃下180 nm工艺技术平均节省21倍)。
{"title":"Design of Ultra-Low Power Combinational Standard Library Cells Using A Novel Leakage Reduction Methodology","authors":"P. Lakshmikanthan, Karan Sahni, A. Nunez","doi":"10.1109/SOCC.2006.283854","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283854","url":null,"abstract":"Leakage power loss is a major concern as it drains the battery even when a circuit is completely idle. Efficient leakage control mechanisms are necessary to maximize battery life. In this paper, the design and characterization of an ultra-low power combinational CMOS standard cell library is presented. A novel technique that achieves cancellation of leakage effects in both the pull-up network (PUN) as well as the pull-down network (PDN) of CMOS cells is presented. A combination of high-VT and standard-VT sleep transistors is used for voltage balancing in the PUN and PDN paths. Experimental results show significant leakage power savings (average of 21X for a 180 nm process technology at 27degC) in CMOS library cells employing this sleep-circuitry when compared to standard CMOS cells.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127129361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Cell Switched Network-on-Chip -- Candidate for Billion-Transistor System-on-Chips 单元交换片上网络——十亿晶体管片上系统的候选方案
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283843
Yuhua Chen
Wormhole routing has been widely adopted for network-on-chip (NoC). We demonstrate that the common belief that wormhole routing requires very little buffer space is no longer true when deployed in billion-transistor SoCs. We propose a Cell Switched NoC (CS-NoC) paradigm that requires less buffer space than wormhole routing. It has been demonstrated that cell switched network has higher throughput, lower latency than wormhole routing, and are less sensitive to bursty traffic. Therefore, CS-NoC is a promising candidate for billion-transistor SoCs.
在片上网络(NoC)中,虫洞路由被广泛采用。我们证明,当部署在十亿晶体管的soc中时,虫洞路由需要很少的缓冲空间的普遍信念不再是正确的。我们提出了一种单元交换NoC (CS-NoC)模式,它比虫洞路由需要更少的缓冲空间。研究表明,蜂窝交换网络比虫洞路由具有更高的吞吐量和更低的延迟,并且对突发流量不太敏感。因此,CS-NoC是十亿晶体管soc的一个有前途的候选者。
{"title":"Cell Switched Network-on-Chip -- Candidate for Billion-Transistor System-on-Chips","authors":"Yuhua Chen","doi":"10.1109/SOCC.2006.283843","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283843","url":null,"abstract":"Wormhole routing has been widely adopted for network-on-chip (NoC). We demonstrate that the common belief that wormhole routing requires very little buffer space is no longer true when deployed in billion-transistor SoCs. We propose a Cell Switched NoC (CS-NoC) paradigm that requires less buffer space than wormhole routing. It has been demonstrated that cell switched network has higher throughput, lower latency than wormhole routing, and are less sensitive to bursty traffic. Therefore, CS-NoC is a promising candidate for billion-transistor SoCs.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116991260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Architecture and Implementation of Power and Area Efficient Receiver Equalization Circuit for High-Speed Serial Data Communication 高速串行数据通信中功率和面积有效的接收机均衡电路的结构与实现
Pub Date : 2006-09-01 DOI: 10.1109/SOCC.2006.283840
Hongjiang Song
A low power, small area receiver equalizer circuit based on novel threshold multiplexing (TMX) technique is presented. Simulation results based on the proposed sampler circuit and a 3-level 2-tap TMX equalizer circuit implementation show achievable 20~30 ps eye margin improvement for a 5 Gb/s high-speed serial I/O application. This circuit demonstrates a very low PVT sensitivity and extremely wideband operation, which is fully digital and highly scalable and therefore very suitable for SOC applications.
提出了一种基于新型阈值复用(TMX)技术的低功耗小面积接收机均衡器电路。仿真结果表明,基于所提出的采样器电路和一个3电平2抽头TMX均衡器电路实现,对于5gb /s高速串行I/O应用,眼余量可提高20~ 30ps。该电路具有非常低的PVT灵敏度和极宽带操作,完全数字化和高度可扩展,因此非常适合SOC应用。
{"title":"Architecture and Implementation of Power and Area Efficient Receiver Equalization Circuit for High-Speed Serial Data Communication","authors":"Hongjiang Song","doi":"10.1109/SOCC.2006.283840","DOIUrl":"https://doi.org/10.1109/SOCC.2006.283840","url":null,"abstract":"A low power, small area receiver equalizer circuit based on novel threshold multiplexing (TMX) technique is presented. Simulation results based on the proposed sampler circuit and a 3-level 2-tap TMX equalizer circuit implementation show achievable 20~30 ps eye margin improvement for a 5 Gb/s high-speed serial I/O application. This circuit demonstrates a very low PVT sensitivity and extremely wideband operation, which is fully digital and highly scalable and therefore very suitable for SOC applications.","PeriodicalId":345714,"journal":{"name":"2006 IEEE International SOC Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117070723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
期刊
2006 IEEE International SOC Conference
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1