Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706521
Intan Zubaidah Mazlan, M. Wahid, Ahmad Fariz Hassan, Mohd Azarulsani Md Azidin, Noor Aqsa Nadeea Mat Isa
Wavelength converter is simply a device for converting the injected signal light from one wavelength to another. A simulation wavelength converter made out of a semiconductor optical amplifier and an optical bandpass filter is presented in this paper. The wavelength converter has a simple configuration and allows future photonic integration.
{"title":"Four wave mixing and cross gain modulation wavelength converters in semiconductor optical amplifier","authors":"Intan Zubaidah Mazlan, M. Wahid, Ahmad Fariz Hassan, Mohd Azarulsani Md Azidin, Noor Aqsa Nadeea Mat Isa","doi":"10.1109/RSM.2013.6706521","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706521","url":null,"abstract":"Wavelength converter is simply a device for converting the injected signal light from one wavelength to another. A simulation wavelength converter made out of a semiconductor optical amplifier and an optical bandpass filter is presented in this paper. The wavelength converter has a simple configuration and allows future photonic integration.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123133289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706458
Aliza Aini Md Ralib, A. Nordin, U. Hashim
The performance of surface acoustic wave resonator in CMOS technology for single and double electrode (IDT) structure is presented. Interdigitated electrodes (IDT) structure in surface acoustic wave (SAW) resonator is the most crucial component for excitation of SAW devices. Possible configurations for the IDT are single electrode and double electrode. The performance of the resonator for single and double electrode is compared at a frequency range of 0.5 GHz to 1 GHz. 2D Finite element modeling of the CMOS SAW resonator was simulated using COMSOL Multiphysics® for three step analysis eigen frequency, frequency domain and time domain analysis. The structure and dimension of the device is based on 0.18 μm RF CMOS process where the pattern of IDT is fabricated using standard CMOS fabrication process. The simulated results shows high quality factor in the order of thousands for double electrode CMOS SAW resonator compared to single electrode CMOS SAW resonator.
{"title":"Finite element modeling of SAW resonator in CMOS technology for single and double interdigitated electrode (IDT) structure","authors":"Aliza Aini Md Ralib, A. Nordin, U. Hashim","doi":"10.1109/RSM.2013.6706458","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706458","url":null,"abstract":"The performance of surface acoustic wave resonator in CMOS technology for single and double electrode (IDT) structure is presented. Interdigitated electrodes (IDT) structure in surface acoustic wave (SAW) resonator is the most crucial component for excitation of SAW devices. Possible configurations for the IDT are single electrode and double electrode. The performance of the resonator for single and double electrode is compared at a frequency range of 0.5 GHz to 1 GHz. 2D Finite element modeling of the CMOS SAW resonator was simulated using COMSOL Multiphysics® for three step analysis eigen frequency, frequency domain and time domain analysis. The structure and dimension of the device is based on 0.18 μm RF CMOS process where the pattern of IDT is fabricated using standard CMOS fabrication process. The simulated results shows high quality factor in the order of thousands for double electrode CMOS SAW resonator compared to single electrode CMOS SAW resonator.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130064796","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706461
S. R. Kasjoo, Arun K. Singh, U. Hashim, A. Song
A novel type of unipolar nanodiode, the self-switching diode (SSD), has recently shown promising properties as an ultra-high-speed detector at room temperature by the utilization of its nonlinear diode-like behavior and intrinsically low parasitic capacitance. In this report, a large SSD array with approximately 2,000 SSDs connected in parallel within the fingers of an interdigital structure was coupled with a printed-circuit-board- (PCB-) based wideband patch antenna, operating in the radio-frequency (RF) region. Such a large array was realized in a single lithography step without the need for interconnection layers. This allows for a simple, low-cost and reproducible fabrication process. Despite of the large impedance mismatch between the SSD array and the PCB-based antenna, the device was able to detect RF signals transmitted using a network analyzer via another patch antenna at distance of approximately 70 cm from it, at 2.45 GHz. The estimated room-temperature extrinsic voltage responsivity of the device and its noise-equivalent power, measured at 5 cm away from the transmitted RF signals and at zero bias, were 10 mV/mW and 1.2 nW/Hz1/2, respectively. The results have shown that the SSDs can be utilized in many RF applications at low cost.
{"title":"Characterization of unipolar nanorectifiers coupled with an RF antenna","authors":"S. R. Kasjoo, Arun K. Singh, U. Hashim, A. Song","doi":"10.1109/RSM.2013.6706461","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706461","url":null,"abstract":"A novel type of unipolar nanodiode, the self-switching diode (SSD), has recently shown promising properties as an ultra-high-speed detector at room temperature by the utilization of its nonlinear diode-like behavior and intrinsically low parasitic capacitance. In this report, a large SSD array with approximately 2,000 SSDs connected in parallel within the fingers of an interdigital structure was coupled with a printed-circuit-board- (PCB-) based wideband patch antenna, operating in the radio-frequency (RF) region. Such a large array was realized in a single lithography step without the need for interconnection layers. This allows for a simple, low-cost and reproducible fabrication process. Despite of the large impedance mismatch between the SSD array and the PCB-based antenna, the device was able to detect RF signals transmitted using a network analyzer via another patch antenna at distance of approximately 70 cm from it, at 2.45 GHz. The estimated room-temperature extrinsic voltage responsivity of the device and its noise-equivalent power, measured at 5 cm away from the transmitted RF signals and at zero bias, were 10 mV/mW and 1.2 nW/Hz1/2, respectively. The results have shown that the SSDs can be utilized in many RF applications at low cost.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127797393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706479
E. Baharudin, A. Ismail, A. Alhawari, E. S. Zainudin, D. L. Majid, F. Seman, N. Khamis
This paper presents the material characterization of agricultural waste by determining its dielectric properties for microwave absorber application. Three proposed materials, which are empty fruit bunch, oil palm frond and rice husk were investigated for the frequency ranging from 10 GHz to 20 GHz. The methodology was developed using the combination of three techniques involving coaxial probe technique, material density measurement and dielectric mixture model. It is found that the material density and air-particle permittivity have the impact on the wave absorption of the material. The result shows that all three agricultural wastes are capable to absorb electromagnetic signal. The average dielectric constant for solid pulverized agricultural waste are 3.49, 4.06 and 3.31 for empty fruit bunch, oil palm frond and rice husk respectively. Furthermore, at of 15.0 GHz, the solid pulverized empty fruit bunch, oil palm frond and rice husk indicate the highest loss tangent with value of 0.2201, 0.2579 and 0.2218 respectively which contributed from the loss factor of the material complex permittivity.
{"title":"Determination of pulverized material permittivity for microwave absorber application","authors":"E. Baharudin, A. Ismail, A. Alhawari, E. S. Zainudin, D. L. Majid, F. Seman, N. Khamis","doi":"10.1109/RSM.2013.6706479","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706479","url":null,"abstract":"This paper presents the material characterization of agricultural waste by determining its dielectric properties for microwave absorber application. Three proposed materials, which are empty fruit bunch, oil palm frond and rice husk were investigated for the frequency ranging from 10 GHz to 20 GHz. The methodology was developed using the combination of three techniques involving coaxial probe technique, material density measurement and dielectric mixture model. It is found that the material density and air-particle permittivity have the impact on the wave absorption of the material. The result shows that all three agricultural wastes are capable to absorb electromagnetic signal. The average dielectric constant for solid pulverized agricultural waste are 3.49, 4.06 and 3.31 for empty fruit bunch, oil palm frond and rice husk respectively. Furthermore, at of 15.0 GHz, the solid pulverized empty fruit bunch, oil palm frond and rice husk indicate the highest loss tangent with value of 0.2201, 0.2579 and 0.2218 respectively which contributed from the loss factor of the material complex permittivity.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"9 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132405527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706494
M. K. MdArshad, U. Hashim
Thin body Silicon-on-Insulator (SOI) devices are promising technology for extending the device scalability as projected in ITRS, thanks to immunity to short channel effects. Further improvement can be achieved when the device incorporated with thin buried oxide (BOX) since it allows suppression of fringing electric fields through the BOX thus improving front-gate-to-channel controllability and reducing DIBL. Thin BOX is also suitable for emulation of double-gate (implementing back-gate biasing) schemes used for tuning device characteristics. Thus, in this paper, from the advantages of double gate transistor, we investigate by using ATLAS 2D-simulations the emulation of double gate transistor with bottom contact (underneath the substrate) and top contact (from the top through the silicon and BOX) for both digital and analog/RF figures of merit in ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Improvement in performance simply can be achieved with such configurations.
薄体绝缘体硅(SOI)器件是一种很有前途的技术，可以扩展ITRS中预计的器件可扩展性，这要归功于其对短信道效应的免疫。当器件与薄埋氧化物(BOX)结合时，可以进一步改进，因为它可以通过BOX抑制边缘电场，从而提高前门到通道的可控性并降低DIBL。Thin BOX也适用于用于调谐器件特性的双栅(实现后门偏置)方案的仿真。因此，在本文中，从双栅晶体管的优点出发，我们通过ATLAS 2d仿真研究了具有下触点(衬底下方)和上触点(从顶部穿过硅和BOX)的双栅晶体管在超薄体和薄埋氧化物(UTBB) SOI mosfet中的数字和模拟/RF优点的仿真。这样的配置可以简单地提高性能。
{"title":"Emulation of double gate transistor in ultra-thin body with thin buried oxide SOI MOSFETs","authors":"M. K. MdArshad, U. Hashim","doi":"10.1109/RSM.2013.6706494","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706494","url":null,"abstract":"Thin body Silicon-on-Insulator (SOI) devices are promising technology for extending the device scalability as projected in ITRS, thanks to immunity to short channel effects. Further improvement can be achieved when the device incorporated with thin buried oxide (BOX) since it allows suppression of fringing electric fields through the BOX thus improving front-gate-to-channel controllability and reducing DIBL. Thin BOX is also suitable for emulation of double-gate (implementing back-gate biasing) schemes used for tuning device characteristics. Thus, in this paper, from the advantages of double gate transistor, we investigate by using ATLAS 2D-simulations the emulation of double gate transistor with bottom contact (underneath the substrate) and top contact (from the top through the silicon and BOX) for both digital and analog/RF figures of merit in ultra-thin body and thin buried oxide (UTBB) SOI MOSFETs. Improvement in performance simply can be achieved with such configurations.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133887688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706508
Chong Soon Weng, U. Hashim, Wei‐Wen Liu
The effect of varying concentration of the phosphate buffer solution (PBS) on the ion sensitive field-effect transistor (ISFET) was studied. 5L of PBS solution was mixed in 20,30,40,50 and 60 L of deionized water (DI water) and tested with ISFET. The results show that the drain current of the ISFET decreases with the decreasing value of PBS solution concentration. The ISFET device tested has a sensitivity of 43.13mV/pH.
{"title":"The effect of phosphate buffer solution (PBS) concentration on the ion sensitive field-effect transistor (ISFET) detection","authors":"Chong Soon Weng, U. Hashim, Wei‐Wen Liu","doi":"10.1109/RSM.2013.6706508","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706508","url":null,"abstract":"The effect of varying concentration of the phosphate buffer solution (PBS) on the ion sensitive field-effect transistor (ISFET) was studied. 5L of PBS solution was mixed in 20,30,40,50 and 60 L of deionized water (DI water) and tested with ISFET. The results show that the drain current of the ISFET decreases with the decreasing value of PBS solution concentration. The ISFET device tested has a sensitivity of 43.13mV/pH.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134284707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706533
A. Ishak, K. Dayana, M. Rusop
Amorphous carbon thin films with thickness 39.6-990. 1nm on insulative glass substrates were deposited by bias-assisted pyrolysis-CVD using `green' renewable precursor palm oil. The effect of nitrogen concentrations used on electrical properties of amorphous carbon thin films was determined. The amorphous carbon thin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic force microscopy. Most of thin films were formed linear region with difference respond of slopes. High slope of ohmic contact for sample 220 mL/min was obtained after nitrogen doping. The sample 220 mL/min showed the optimum slope and the highest current responding. The resistivity was decreased by nitrogen concentration used where samples 220 mL/min and 70 mL/min were the lowest and the highest resistivity, respectively. We found, doping with nitrogen were increased the conductivity and photo response and decreased the resistivity of a-C thin films as compared without use of nitrogen.
{"title":"Effect of nitrogen concentrations on electrical properties of amorphous carbon thin films by using palm oil precursor","authors":"A. Ishak, K. Dayana, M. Rusop","doi":"10.1109/RSM.2013.6706533","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706533","url":null,"abstract":"Amorphous carbon thin films with thickness 39.6-990. 1nm on insulative glass substrates were deposited by bias-assisted pyrolysis-CVD using `green' renewable precursor palm oil. The effect of nitrogen concentrations used on electrical properties of amorphous carbon thin films was determined. The amorphous carbon thin films were characterized by current-voltage measurement, UV/VIS spectrophotometer, surface profiler, and atomic force microscopy. Most of thin films were formed linear region with difference respond of slopes. High slope of ohmic contact for sample 220 mL/min was obtained after nitrogen doping. The sample 220 mL/min showed the optimum slope and the highest current responding. The resistivity was decreased by nitrogen concentration used where samples 220 mL/min and 70 mL/min were the lowest and the highest resistivity, respectively. We found, doping with nitrogen were increased the conductivity and photo response and decreased the resistivity of a-C thin films as compared without use of nitrogen.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134355180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706513
M. A. Rosdan, S. H. Herman, W. Abdullah, N. Kamarozaman, M. I. Syono
This paper presents an investigation on sputtered titanium dioxide (TiO2) thin film for application in the Extended-Gate Field Effect Transistor (EGFET) sensor application for pH detection. The TiO2 thin film was fabricated on conductive indium-tin oxide (ITO) covered glass by using RF Sputtering method. An EGFET proof-of-concept setup was constructed using a commercial FET as the transducer and the TiO2/ITO structure was used for the extended gate. The sensor measurement was taken using semiconductor device parametric analyzer, constant-current constant-voltage biasing interfacing circuit and data logger to obtain the sensitivity and the characteristics for output voltage with respect to time. TiO2 thin film on ITO glass as the sensing membrane was compared with a bare ITO glass substrate for the extended gate. The TiO2/ITO glass exhibited the sensitivity of 42.1 mV/pH and good linearity of 0.9997 in the sensing range pH4, pH7 and pH10 which was better than the bare ITO glass sensitivity of 31.3 mV/pH and the linearity of 0.9868.
{"title":"Sputtered titanium dioxide thin film for Extended-Gate FET sensor application","authors":"M. A. Rosdan, S. H. Herman, W. Abdullah, N. Kamarozaman, M. I. Syono","doi":"10.1109/RSM.2013.6706513","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706513","url":null,"abstract":"This paper presents an investigation on sputtered titanium dioxide (TiO2) thin film for application in the Extended-Gate Field Effect Transistor (EGFET) sensor application for pH detection. The TiO2 thin film was fabricated on conductive indium-tin oxide (ITO) covered glass by using RF Sputtering method. An EGFET proof-of-concept setup was constructed using a commercial FET as the transducer and the TiO2/ITO structure was used for the extended gate. The sensor measurement was taken using semiconductor device parametric analyzer, constant-current constant-voltage biasing interfacing circuit and data logger to obtain the sensitivity and the characteristics for output voltage with respect to time. TiO2 thin film on ITO glass as the sensing membrane was compared with a bare ITO glass substrate for the extended gate. The TiO2/ITO glass exhibited the sensitivity of 42.1 mV/pH and good linearity of 0.9997 in the sensing range pH4, pH7 and pH10 which was better than the bare ITO glass sensitivity of 31.3 mV/pH and the linearity of 0.9868.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133544475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706517
F. Mohamad, M. Rusop
The comparison in term of both electrical and structural properties of amorphous carbon (a-C) thin film and nitrogenated amorphous carbon (a-C:N) thin film deposited at 750 °C has been done. The deposition of those films by thermal chemical vapour deposition (TCVD) technique involved argon (Ar) gas, nitrogen gas (N2) and camphor oil as carrier gas, dopant and carbon source respectively. The electrical and structural characterizations were based on Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Scanning Electron Microscopy (SEM). There are significant changes in electrical properties and surface morphology for a-C and a-C:N thin films due to the arrangement of nitrogen atoms.
{"title":"Nitrogenated amorphous carbon film by thermal chemical vapor deposition","authors":"F. Mohamad, M. Rusop","doi":"10.1109/RSM.2013.6706517","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706517","url":null,"abstract":"The comparison in term of both electrical and structural properties of amorphous carbon (a-C) thin film and nitrogenated amorphous carbon (a-C:N) thin film deposited at 750 °C has been done. The deposition of those films by thermal chemical vapour deposition (TCVD) technique involved argon (Ar) gas, nitrogen gas (N2) and camphor oil as carrier gas, dopant and carbon source respectively. The electrical and structural characterizations were based on Advantest R6243 DC Voltage Current Source/Monitor and SemiPro Curve Software and Scanning Electron Microscopy (SEM). There are significant changes in electrical properties and surface morphology for a-C and a-C:N thin films due to the arrangement of nitrogen atoms.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133082476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-09-01DOI: 10.1109/RSM.2013.6706481
A. Zokaei, A. Amirabadi
This paper presents the design and simulation results of a tunable multi-band Low Noise Amplifier (LNA) for mobile WiMAX (IEEE 802.16e) using 0.18μm CMOS process. The target frequency bands are considered to be (3.4~3.6) GHz and (5.2~5.9) GHz. A technique known as Active Post Distortion (APD) was used to improve the linearity and offers optimum noise figure for the system. It provides a third order intercept point of about -1.3 dBm and -5.2 dBm for lower and upper bands respectively. It provides a power gain of more than 12.9 dB, input reverse isolation and noise figure of below -10.3 dB and 3.3 dB respectively. Considering a power supply of 1 v it dissipates 9.12 mw.
{"title":"A low voltage low power 3.5/5.8 GHz dual-band common gate Low Noise Amplifier","authors":"A. Zokaei, A. Amirabadi","doi":"10.1109/RSM.2013.6706481","DOIUrl":"https://doi.org/10.1109/RSM.2013.6706481","url":null,"abstract":"This paper presents the design and simulation results of a tunable multi-band Low Noise Amplifier (LNA) for mobile WiMAX (IEEE 802.16e) using 0.18μm CMOS process. The target frequency bands are considered to be (3.4~3.6) GHz and (5.2~5.9) GHz. A technique known as Active Post Distortion (APD) was used to improve the linearity and offers optimum noise figure for the system. It provides a third order intercept point of about -1.3 dBm and -5.2 dBm for lower and upper bands respectively. It provides a power gain of more than 12.9 dB, input reverse isolation and noise figure of below -10.3 dB and 3.3 dB respectively. Considering a power supply of 1 v it dissipates 9.12 mw.","PeriodicalId":346255,"journal":{"name":"RSM 2013 IEEE Regional Symposium on Micro and Nanoelectronics","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132728081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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