Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188956
Guo-Ning Wang, Kaviya Aranganadin, Y. Lan, H. Hsu, J. Verboncoeur, Ming-Chieh Lin
Saturation of field emission under a strong applied electric field has been observed experimentally and studied theoretically for decades. Basically, the saturation can be attributed to a substrate effect characterized by a resistance or a space charge effect featured with a reduced surface electric field. In this work, a self-consistent model based on the particle-in-cell method coupled with a circuit modeling is employed to study the saturation of field emission due to these two effects in order to understand the electrical properties influenced and different characteristics caused.
{"title":"Space Charge and Resistance Effects on Saturation of Field Emission","authors":"Guo-Ning Wang, Kaviya Aranganadin, Y. Lan, H. Hsu, J. Verboncoeur, Ming-Chieh Lin","doi":"10.1109/IVNC57695.2023.10188956","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188956","url":null,"abstract":"Saturation of field emission under a strong applied electric field has been observed experimentally and studied theoretically for decades. Basically, the saturation can be attributed to a substrate effect characterized by a resistance or a space charge effect featured with a reduced surface electric field. In this work, a self-consistent model based on the particle-in-cell method coupled with a circuit modeling is employed to study the saturation of field emission due to these two effects in order to understand the electrical properties influenced and different characteristics caused.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131312816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188955
Z. Bigelow, L. Velásquez-García
We report the design, fabrication, and characterization of the first additively manufactured, multi-Langmuir probe (MLP) sensor for CubeSat plasma diagnostics. The probes are configured on three different, independent sensing systems (i.e., single, dual, and triple Langmuir probes {LPs}) that generate rich plasma data, including corroborated and real-time measurements. The probe electrodes have a 0.5 mm by 0.5 mm cross-section and were additively manufactured in stainless steel (SS) via binder material jetting, while the sensor housing was 3D-printed in the glass-ceramic material, vitrolite, via vat polymerization. The 3D-printed MLP was tested in a laboratory helicon plasma. The single and dual LPs showed excellent agreement, to within <5% for all plasma characteristics. The triple LP measured plasma parameters instantly, providing a time-sensitive snapshot of the plasma.
我们报道了用于CubeSat等离子体诊断的第一个增材制造的多langmuir探针(MLP)传感器的设计、制造和表征。探针配置在三种不同的、独立的传感系统上(即单、双和三重Langmuir探针{LPs})，产生丰富的等离子体数据，包括确证和实时测量。探头电极的横截面为0.5 mm × 0.5 mm，并通过粘结剂材料喷射用不锈钢(SS)进行增材制造，而传感器外壳则通过还原聚合在玻璃陶瓷材料vitrolite上进行3d打印。3d打印的MLP在实验室螺旋等离子体中进行了测试。单和双LPs表现出极好的一致性，在<5%以内的所有血浆特征。三重LP立即测量等离子体参数，提供等离子体的时间敏感快照。
{"title":"Fully 3D-Printed Miniature Langmuire Multi-Probe Sensor for Cubesat Ionospheric Plasma Diagnostics","authors":"Z. Bigelow, L. Velásquez-García","doi":"10.1109/IVNC57695.2023.10188955","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188955","url":null,"abstract":"We report the design, fabrication, and characterization of the first additively manufactured, multi-Langmuir probe (MLP) sensor for CubeSat plasma diagnostics. The probes are configured on three different, independent sensing systems (i.e., single, dual, and triple Langmuir probes {LPs}) that generate rich plasma data, including corroborated and real-time measurements. The probe electrodes have a 0.5 mm by 0.5 mm cross-section and were additively manufactured in stainless steel (SS) via binder material jetting, while the sensor housing was 3D-printed in the glass-ceramic material, vitrolite, via vat polymerization. The 3D-printed MLP was tested in a laboratory helicon plasma. The single and dual LPs showed excellent agreement, to within <5% for all plasma characteristics. The triple LP measured plasma parameters instantly, providing a time-sensitive snapshot of the plasma.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126567692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188987
J. S. Vazquez, A. T. Priyoti, Ragib Ahsan, Hyun Uk Chae, R. Kapadia
Previous studies of planar graphene-oxide-semiconductor (GOS) structures have highlighted Fowler-Nordheim (FN) tunneling through the oxide layer as the dominant mechanism for electron emission[1]. Scattering within the oxide layer limits electron emission but can be counteracted by generating hot-electrons through optical excitation in the underlying semiconductor[2]. Still, the scattering in the oxide persists, limiting the current emission efficiency. Additionally, trapping of electrons causes broadening of the emitted electron energy spectrum. A novel graphene-vacuum-semiconductor (GVS) structure is developed. By eliminating the oxide layer, the tunneling mechanisms can be reduced to Fowler-Nordheim exclusively. As a result, emitted electrons will have an energy spread limited by that of the semiconductor and scattering in the graphene[2]. Additionally, electron trapping in the oxide is eliminated. Field-emission is also increased as the electric field increased by controllably reducing the height of the vacuum gap. Here we will explore the fabrication of vacuum hot electron light assisted cathodes (VHELACs).
{"title":"A Vacuum Insulator Negative Electron Affinity Electron Emitter with High Quantum Efficiency","authors":"J. S. Vazquez, A. T. Priyoti, Ragib Ahsan, Hyun Uk Chae, R. Kapadia","doi":"10.1109/IVNC57695.2023.10188987","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188987","url":null,"abstract":"Previous studies of planar graphene-oxide-semiconductor (GOS) structures have highlighted Fowler-Nordheim (FN) tunneling through the oxide layer as the dominant mechanism for electron emission[1]. Scattering within the oxide layer limits electron emission but can be counteracted by generating hot-electrons through optical excitation in the underlying semiconductor[2]. Still, the scattering in the oxide persists, limiting the current emission efficiency. Additionally, trapping of electrons causes broadening of the emitted electron energy spectrum. A novel graphene-vacuum-semiconductor (GVS) structure is developed. By eliminating the oxide layer, the tunneling mechanisms can be reduced to Fowler-Nordheim exclusively. As a result, emitted electrons will have an energy spread limited by that of the semiconductor and scattering in the graphene[2]. Additionally, electron trapping in the oxide is eliminated. Field-emission is also increased as the electric field increased by controllably reducing the height of the vacuum gap. Here we will explore the fabrication of vacuum hot electron light assisted cathodes (VHELACs).","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134504384","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188985
Nirupama Malavalli Prasad, O. S. Panwar, B. Satyanarayana
The current work focuses on creating and demonstrating the viability of an indigenous capability to work on all aspects of Field Emission Electrical Propulsion (FEEP) technology, from the development of novel nanocarbon-based field emitter for field emission technology to the creation of a growth and characterization facility. The establishment of a complete, locally designed and developed cathodic arc system for the growth of amorphous and nanocarbon films at room temperature was the first significant result. The equipment includes provisions for the growth such as varying deposition ion energies, gas environments, throw distances, and various partial pressures of gas compositions, as well as arc voltage and arc current. This is one of the first indigenous system with provision for the growth of nanocarbons over 200 mm diameter substrates, which can be used to produce a range of high temperature grown materials at low temperatures with the same properties. The systematic work was carried out to demonstrate the feasibility of patterning or creation of periodic metal nanostructures using Nano Sphere Lithography, without masks over large areas at a sub optimal cost. This led to the creation of flat metal triangular pattern of area 0.03 square microns. This was used as a template to grow enhanced electron for the development of periodic metal nanostructures, as a base for the deposition of room temperature nanocarbon on patterned substrates for a wide range of applications including field emitters.
{"title":"The Viability of Nanocluster Carbon-Based Field Emitter Arrays for the Field Emission Electrical Propulsion System","authors":"Nirupama Malavalli Prasad, O. S. Panwar, B. Satyanarayana","doi":"10.1109/IVNC57695.2023.10188985","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188985","url":null,"abstract":"The current work focuses on creating and demonstrating the viability of an indigenous capability to work on all aspects of Field Emission Electrical Propulsion (FEEP) technology, from the development of novel nanocarbon-based field emitter for field emission technology to the creation of a growth and characterization facility. The establishment of a complete, locally designed and developed cathodic arc system for the growth of amorphous and nanocarbon films at room temperature was the first significant result. The equipment includes provisions for the growth such as varying deposition ion energies, gas environments, throw distances, and various partial pressures of gas compositions, as well as arc voltage and arc current. This is one of the first indigenous system with provision for the growth of nanocarbons over 200 mm diameter substrates, which can be used to produce a range of high temperature grown materials at low temperatures with the same properties. The systematic work was carried out to demonstrate the feasibility of patterning or creation of periodic metal nanostructures using Nano Sphere Lithography, without masks over large areas at a sub optimal cost. This led to the creation of flat metal triangular pattern of area 0.03 square microns. This was used as a template to grow enhanced electron for the development of periodic metal nanostructures, as a base for the deposition of room temperature nanocarbon on patterned substrates for a wide range of applications including field emitters.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126645888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189018
M. Krysztof, Paweł Miera, Paweł Urbański, T. Grzebyk
The article presents a fabrication process and preliminary characterization of an integrated silicon electron source designed for High Vacuum MEMS (HVMEMS) devices, i.e., MEMS electron microscope, MEMS X-ray source. The electron source consists of a silicon tip emitter and a silicon gate electrode integrated on a single glass substrate, in a very close distance from each other. The source generates an electron beam without any carbon nanotube coverage, which was the case in the previous realization of the electron emitters.
{"title":"Integrated Silicon Electron Source for High Vacuum Mems Devices","authors":"M. Krysztof, Paweł Miera, Paweł Urbański, T. Grzebyk","doi":"10.1109/IVNC57695.2023.10189018","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189018","url":null,"abstract":"The article presents a fabrication process and preliminary characterization of an integrated silicon electron source designed for High Vacuum MEMS (HVMEMS) devices, i.e., MEMS electron microscope, MEMS X-ray source. The electron source consists of a silicon tip emitter and a silicon gate electrode integrated on a single glass substrate, in a very close distance from each other. The source generates an electron beam without any carbon nanotube coverage, which was the case in the previous realization of the electron emitters.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114097321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188884
Julian Eiler, Christina Högl, M. Lindner, M. Bachmann, R. Schreiner
A new concept for a miniaturized planar ion source based on a surface dielectric barrier discharge (SDBD) is presented. A fabrication method based on a stamping process is described, and the plasma actuators are characterized based on their power in dependence of the applied voltage. The voltage for plasma ignition is approx. 1 kV with a maximum plasma power of 40 W/m at 3,4 kV.
{"title":"Miniaturized Surface Dielectric Barrier Discharge Plasma Actuators for Application in Chemical Analysis Systems","authors":"Julian Eiler, Christina Högl, M. Lindner, M. Bachmann, R. Schreiner","doi":"10.1109/IVNC57695.2023.10188884","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188884","url":null,"abstract":"A new concept for a miniaturized planar ion source based on a surface dielectric barrier discharge (SDBD) is presented. A fabrication method based on a stamping process is described, and the plasma actuators are characterized based on their power in dependence of the applied voltage. The voltage for plasma ignition is approx. 1 kV with a maximum plasma power of 40 W/m at 3,4 kV.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128513185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188983
Chengyun Wang, Yicong Chen, Guofu Zhang, Song Kang, Xinran Li, J. She, S. Deng, Jun Chen
In this paper, we developed a temporal response model of gated ZnO nanowire field emitter arrays (FEAs) which considers the effects of distributed RC parameters and emission current induced heating process of the ZnO nanowire. The temporal response of the FEAs under different addressing schemes, including single pixel and multi-row configurations, were simulated. The relevant factors affecting the response were discussed. This research provides an important basis for design of large area ZnO nanowire FEAs with high response.
{"title":"Modeling the Temporal Response of Gated ZNO Nanowire Field Emitter Arrays","authors":"Chengyun Wang, Yicong Chen, Guofu Zhang, Song Kang, Xinran Li, J. She, S. Deng, Jun Chen","doi":"10.1109/IVNC57695.2023.10188983","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188983","url":null,"abstract":"In this paper, we developed a temporal response model of gated ZnO nanowire field emitter arrays (FEAs) which considers the effects of distributed RC parameters and emission current induced heating process of the ZnO nanowire. The temporal response of the FEAs under different addressing schemes, including single pixel and multi-row configurations, were simulated. The relevant factors affecting the response were discussed. This research provides an important basis for design of large area ZnO nanowire FEAs with high response.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134289773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188968
Colin C. Eckhoff, N. Lubinsky, Randall E. Pedder, L. Velásquez-García
We report the design, fabrication, and preliminary characterization of the first fully additively manufactured, miniature, ceramic quadrupole mass filters (QMFs). Through a monolithic design, microstructured digital light processing of glass-ceramic feedstock, and electroless metal plating, this work demonstrates the feasibility of additive manufacturing to create compact mass filters for point-of-care (PoC) mass spectrometry systems. Furthermore, this work demonstrates the practicality of a novel, RF-only method of electrically driving quadrupole mass filters.
{"title":"Miniature, Monolithic, Fully Additively Manufactured Glass-Ceramic Quadrupole Mass Filters for Point-of-Care Mass Spectrometry","authors":"Colin C. Eckhoff, N. Lubinsky, Randall E. Pedder, L. Velásquez-García","doi":"10.1109/IVNC57695.2023.10188968","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188968","url":null,"abstract":"We report the design, fabrication, and preliminary characterization of the first fully additively manufactured, miniature, ceramic quadrupole mass filters (QMFs). Through a monolithic design, microstructured digital light processing of glass-ceramic feedstock, and electroless metal plating, this work demonstrates the feasibility of additive manufacturing to create compact mass filters for point-of-care (PoC) mass spectrometry systems. Furthermore, this work demonstrates the practicality of a novel, RF-only method of electrically driving quadrupole mass filters.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"457 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123227242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10188959
J. Protz
Here, we discuss how existing results for drag in the vacuum might be extended to the case of lone finite-chord slender body transiting the vacuum. We also present, qualitatively, a model of the vacuum that can support within it boundary films, near wakes, wake shear zones, etc. Finally, we discuss Hohman transfers, Bohr's model of the atom, Planck, etc.
{"title":"Qualitative Modeling of an Electron or Finite-Chord Slender Body Transiting a Vacuum with DRAG","authors":"J. Protz","doi":"10.1109/IVNC57695.2023.10188959","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10188959","url":null,"abstract":"Here, we discuss how existing results for drag in the vacuum might be extended to the case of lone finite-chord slender body transiting the vacuum. We also present, qualitatively, a model of the vacuum that can support within it boundary films, near wakes, wake shear zones, etc. Finally, we discuss Hohman transfers, Bohr's model of the atom, Planck, etc.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121559606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-07-10DOI: 10.1109/IVNC57695.2023.10189000
C. Holland, J. Prestage, T. Hoang, S. Chung, T. Le, Sung-Jin Park, Nan Yu
We have developed a prototype mercury ion clock in a miniature pumpless vacuum quadrupole trap tube employing a Spindt-type field-emitter array (FEA) as an electron source for ionization, an external 194-nm micro-plasma lamp for optical pumping, and a 40.5-GHz CMOS-based microwave synthesizer creating a clock capable of achieving the 10−14-stability level in one day. The physics package consists of the sealed 30cc vacuum tube with one layer of magnetic shielding, light source, and detector assembly. The complete system's SWaP (size, weight, and power) is 1.1 L, 1.2 kg, and < 6 W of power. System stability level is comparable to the widely used, much larger rack-mounted Microchip 5071A cesium frequency standard. Prototype clocks have operated for over 30 months.
{"title":"Development of a Micro Mercury Trapped Ion Clock Prototype Employing a Spindt Cathode Ionization Source","authors":"C. Holland, J. Prestage, T. Hoang, S. Chung, T. Le, Sung-Jin Park, Nan Yu","doi":"10.1109/IVNC57695.2023.10189000","DOIUrl":"https://doi.org/10.1109/IVNC57695.2023.10189000","url":null,"abstract":"We have developed a prototype mercury ion clock in a miniature pumpless vacuum quadrupole trap tube employing a Spindt-type field-emitter array (FEA) as an electron source for ionization, an external 194-nm micro-plasma lamp for optical pumping, and a 40.5-GHz CMOS-based microwave synthesizer creating a clock capable of achieving the 10−14-stability level in one day. The physics package consists of the sealed 30cc vacuum tube with one layer of magnetic shielding, light source, and detector assembly. The complete system's SWaP (size, weight, and power) is 1.1 L, 1.2 kg, and < 6 W of power. System stability level is comparable to the widely used, much larger rack-mounted Microchip 5071A cesium frequency standard. Prototype clocks have operated for over 30 months.","PeriodicalId":346266,"journal":{"name":"2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121762514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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