Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956170
Xue-ren Huang, Baihua Xia, D. Zhong, Shaofeng An, Xi-wen Zhu, G. Mei
Cavity pulling effect has been fully considered in designing of various atomic frequency standards, but quite often it has been neglected for passive rubidium atomic frequency standards (RAFS). This situation may be acceptable for the commonly used RAFS but it is less so for high performance one. A new type of microwave cavity with low temperature coefficient (TC) was designed with coefficient of 28.2 kHz//spl deg/C, which is positive and nearly one order smaller than that of the traditional TE/sub 111/ cavity. Analyses show that the cavity pulling effect of the cavity can be neglected under reasonable temperature stabilization condition. The main cause of the small TC of the cavity was discussed, which is due to the compensation of the positive TC of the dielectric ring in the cavity to the negative TC of the metal part of the cavity.
{"title":"A microwave cavity with low temperature coefficient for passive rubidium frequency standards","authors":"Xue-ren Huang, Baihua Xia, D. Zhong, Shaofeng An, Xi-wen Zhu, G. Mei","doi":"10.1109/FREQ.2001.956170","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956170","url":null,"abstract":"Cavity pulling effect has been fully considered in designing of various atomic frequency standards, but quite often it has been neglected for passive rubidium atomic frequency standards (RAFS). This situation may be acceptable for the commonly used RAFS but it is less so for high performance one. A new type of microwave cavity with low temperature coefficient (TC) was designed with coefficient of 28.2 kHz//spl deg/C, which is positive and nearly one order smaller than that of the traditional TE/sub 111/ cavity. Analyses show that the cavity pulling effect of the cavity can be neglected under reasonable temperature stabilization condition. The main cause of the small TC of the cavity was discussed, which is due to the compensation of the positive TC of the dielectric ring in the cavity to the negative TC of the metal part of the cavity.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122477786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956199
B. Mill
Isomorphism of ions in Ca/sub 3/Ga/sub 2/Ge/sub 4/O/sub 14/-type structure is considered and criteria of search for new compositions in four-component oxide systems are formulated. The preparation of two new groups of disordered four-component compositions is reported. Ln/sub 3/Ga/sub 3/Ge/sub 2/BeO/sub 14/, possessing wide range of homogeneity, exist with Ln = La-Eu. Substitution for Be/sup 2+/ in 2d tetrahedral site shifts Ln:Ga ratio from garnet one 3:5 to 1:1 and decreases garnet structure stability. This enables to introduce smaller, then Nd/sup 3+/, rare earth ions Sm/sup 3+/ and Eu/sup 3+/. Four-component solid solutions are found in binary section A/sub 3/B/sub x/M/sub 2/Si/sub 4-x/O/sub 14/ of silicate systems AO-BO/sub 2/-M/sub 2/O/sub 3/-SiO/sub 2/ (A=Ca, Sr, Ba; B=Ge, Ti, Sn, Zr; M=Ga, Fe). Some Ti-Ga-silicate compositions look promising for melt crystal growth. Principles of crystallization in four-component system are discussed.
{"title":"Two new lines of langasite family compositions","authors":"B. Mill","doi":"10.1109/FREQ.2001.956199","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956199","url":null,"abstract":"Isomorphism of ions in Ca/sub 3/Ga/sub 2/Ge/sub 4/O/sub 14/-type structure is considered and criteria of search for new compositions in four-component oxide systems are formulated. The preparation of two new groups of disordered four-component compositions is reported. Ln/sub 3/Ga/sub 3/Ge/sub 2/BeO/sub 14/, possessing wide range of homogeneity, exist with Ln = La-Eu. Substitution for Be/sup 2+/ in 2d tetrahedral site shifts Ln:Ga ratio from garnet one 3:5 to 1:1 and decreases garnet structure stability. This enables to introduce smaller, then Nd/sup 3+/, rare earth ions Sm/sup 3+/ and Eu/sup 3+/. Four-component solid solutions are found in binary section A/sub 3/B/sub x/M/sub 2/Si/sub 4-x/O/sub 14/ of silicate systems AO-BO/sub 2/-M/sub 2/O/sub 3/-SiO/sub 2/ (A=Ca, Sr, Ba; B=Ge, Ti, Sn, Zr; M=Ga, Fe). Some Ti-Ga-silicate compositions look promising for melt crystal growth. Principles of crystallization in four-component system are discussed.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124537158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956167
Jingbiao Chen, Junhai Zhang, Fengzhi Wang, Donghai Yang, Yi-qiu Wang
In this report, we discussed the interference phenomenon of the AC Stark effect in optical frequency standard with Ramsey spectroscopy. The analytic expression and its numerical result show that an interference fringe is superimposed on the usual AC Stark level shift dispersion line-shape. This phenomenon has never been observed before. By numerical method, we have analyzed the interesting feature of this effect in detail. A method to measure the interference of the AC Stark effect is presented. Finally, a method to observe super-steep dispersion in separated fields scheme is proposed.
{"title":"Interference phenomenon of AC Stark effect in optical Ramsey frequency standard","authors":"Jingbiao Chen, Junhai Zhang, Fengzhi Wang, Donghai Yang, Yi-qiu Wang","doi":"10.1109/FREQ.2001.956167","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956167","url":null,"abstract":"In this report, we discussed the interference phenomenon of the AC Stark effect in optical frequency standard with Ramsey spectroscopy. The analytic expression and its numerical result show that an interference fringe is superimposed on the usual AC Stark level shift dispersion line-shape. This phenomenon has never been observed before. By numerical method, we have analyzed the interesting feature of this effect in detail. A method to measure the interference of the AC Stark effect is presented. Finally, a method to observe super-steep dispersion in separated fields scheme is proposed.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124514268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956207
J. C. King, J.J. Martin
Electrolysis (electrodiffusion, sweeping) in vacuum has been shown to reduce the sensitivity of quartz resonators to pulsed radiation. Vacuum-sweeping is expected to remove the alkalis associated with the aluminum and the hydrogen associated with the growth-defects and replace them with electronic holes. The process is not very well understood and is often incomplete. It has been suggested that sweeping in the presence of ionizing radiation would speed the release of the trapped ions and hydrogen from the defect sites by enhancing the availability of electronic charge carriers over those generated at the electrodes. Quartz subjected to this process should not show any OH-related infrared absorption. Several blocks of Sawyer Special Premium Q quartz were vacuum-swept while being irradiated. Bremstrahlung (continuous) x-rays produced by colliding 1.5 MeV electrons with a Mo target were used for the irradiation. Low-temperature FTIR profiles showed a complete removal of all of the OH-related absorption bands from two of the three blocks that had been vacuum-swept in the radiation-field. Control blocks were vacuum-swept without the radiation-field. FTIR profiles made on these control blocks showed that the sweeping front had moved only a fraction of the way through the blocks. Low-temperature FTIR measurements showed that the block that was only partially swept in the radiation field was less pure than the other blocks. It was also inhomogenous. The removal of hydrogen by vacuum-sweeping in a radiation-field appears to be permanent; annealing a sample in air at 500/spl deg/C did not reintroduce any OH-related absorption bands.
在真空中电解(电扩散，清扫)已被证明可以降低石英谐振器对脉冲辐射的灵敏度。真空清扫有望去除与铝有关的碱和与生长缺陷有关的氢，并用电子空穴代替它们。这个过程不是很好理解，而且往往是不完整的。有人认为，在电离辐射的存在下进行扫描，通过提高电极上产生的电子载流子的可用性，可以加速从缺陷部位释放被捕获的离子和氢。经受此过程的石英不应显示任何与oh相关的红外吸收。几块Sawyer Special Premium Q石英在辐照时被真空扫描。利用1.5 MeV电子与Mo靶碰撞产生的轫致辐射(连续)x射线进行辐照。低温FTIR谱图显示，在辐射场真空扫过的三个块中，有两个块的oh相关吸收带完全去除。对照组在没有辐射场的情况下进行真空扫描。在这些控制块上制作的FTIR剖面显示，横扫锋面只移动了块的一小部分。低温FTIR测量表明，在辐射场中只被部分扫过的块比其他块的纯度低。它也是非齐次的。在辐射场中真空清除氢似乎是永久的;在500/spl℃的空气中退火样品没有重新引入任何与oh相关的吸收带。
{"title":"The effects of ionizing radiation on the vacuum-electrolysis of quartz","authors":"J. C. King, J.J. Martin","doi":"10.1109/FREQ.2001.956207","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956207","url":null,"abstract":"Electrolysis (electrodiffusion, sweeping) in vacuum has been shown to reduce the sensitivity of quartz resonators to pulsed radiation. Vacuum-sweeping is expected to remove the alkalis associated with the aluminum and the hydrogen associated with the growth-defects and replace them with electronic holes. The process is not very well understood and is often incomplete. It has been suggested that sweeping in the presence of ionizing radiation would speed the release of the trapped ions and hydrogen from the defect sites by enhancing the availability of electronic charge carriers over those generated at the electrodes. Quartz subjected to this process should not show any OH-related infrared absorption. Several blocks of Sawyer Special Premium Q quartz were vacuum-swept while being irradiated. Bremstrahlung (continuous) x-rays produced by colliding 1.5 MeV electrons with a Mo target were used for the irradiation. Low-temperature FTIR profiles showed a complete removal of all of the OH-related absorption bands from two of the three blocks that had been vacuum-swept in the radiation-field. Control blocks were vacuum-swept without the radiation-field. FTIR profiles made on these control blocks showed that the sweeping front had moved only a fraction of the way through the blocks. Low-temperature FTIR measurements showed that the block that was only partially swept in the radiation field was less pure than the other blocks. It was also inhomogenous. The removal of hydrogen by vacuum-sweeping in a radiation-field appears to be permanent; annealing a sample in air at 500/spl deg/C did not reintroduce any OH-related absorption bands.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115420493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956333
B. Dulmet
This paper outlines the modeling of strong reciprocal couplings occurring on periodically corrugated piezoelectric substrates between SAWS (or STWs) propagating in their second stop band, i.e. with a wavelength close to the period of corrugations, and BAWs propagating either into or from the depth of substrate. The solution is classically expanded as series of Bloch functions allowing to obey periodic boundary conditions on the external surface. Those boundary conditions are actually taken into account by a simple integral method accessing the Fourier coefficients of the periodic part of effective stresses and induction on the free boundary of substrate. Treatment of piezoelectric effect is detailed together with issues regarding the effect of anisotropy, and results obtained on structures containing a finite number of gratings are briefly explained. The influence of the number of grooves on the energy conversion ratios is described.
{"title":"Analysis of a SAW-BAW mutual transducer of finite length on piezoelectric substrates","authors":"B. Dulmet","doi":"10.1109/FREQ.2001.956333","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956333","url":null,"abstract":"This paper outlines the modeling of strong reciprocal couplings occurring on periodically corrugated piezoelectric substrates between SAWS (or STWs) propagating in their second stop band, i.e. with a wavelength close to the period of corrugations, and BAWs propagating either into or from the depth of substrate. The solution is classically expanded as series of Bloch functions allowing to obey periodic boundary conditions on the external surface. Those boundary conditions are actually taken into account by a simple integral method accessing the Fourier coefficients of the periodic part of effective stresses and induction on the free boundary of substrate. Treatment of piezoelectric effect is detailed together with issues regarding the effect of anisotropy, and results obtained on structures containing a finite number of gratings are briefly explained. The influence of the number of grooves on the energy conversion ratios is described.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121936276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956251
T. Watanabe
The phenomenon in which etch pits and etch channels did not generate the required etching rate of an AT-cut quartz crystal wafer by carrying out etching at a rate lower than the growth speed of crystal was discovered. The high-speed chemical etching process examined, including lapping to polishing of the crystal wafers, was performed in less than 4 minutes. As a condition for which a mirror surface is possible, the ultra-clean washing method of removing contamination of the crystal wafer before etching was shown to be an important element. The manufacturing process for carrying out batch processing of the crystal wafer of #2000 finish after cutting by this high-speed chemical etching was shown, and mass production was made possible. The high-speed chemical etching. method is applied also to 2 /spl mu/m thickness thin crystal wafer production used at higher operating frequencies.
{"title":"Mass production of quartz high-speed chemical etching applied to AT-cut wafers","authors":"T. Watanabe","doi":"10.1109/FREQ.2001.956251","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956251","url":null,"abstract":"The phenomenon in which etch pits and etch channels did not generate the required etching rate of an AT-cut quartz crystal wafer by carrying out etching at a rate lower than the growth speed of crystal was discovered. The high-speed chemical etching process examined, including lapping to polishing of the crystal wafers, was performed in less than 4 minutes. As a condition for which a mirror surface is possible, the ultra-clean washing method of removing contamination of the crystal wafer before etching was shown to be an important element. The manufacturing process for carrying out batch processing of the crystal wafer of #2000 finish after cutting by this high-speed chemical etching was shown, and mass production was made possible. The high-speed chemical etching. method is applied also to 2 /spl mu/m thickness thin crystal wafer production used at higher operating frequencies.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126696585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956354
F. Sthal, J. Boy, M. Mourey, F. Marionnet
First measurements of the phase noise versus the radius of curvature of SC-cut resonators are given. Resonators with adherent electrodes are investigated and compared with unelectroded resonators. The phase noise measurements are obtained with a crystal resonator tester specifically designed to assist in the characterization of quartz crystal resonators.
{"title":"Phase noise study of quartz crystal resonators versus the radius of curvature","authors":"F. Sthal, J. Boy, M. Mourey, F. Marionnet","doi":"10.1109/FREQ.2001.956354","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956354","url":null,"abstract":"First measurements of the phase noise versus the radius of curvature of SC-cut resonators are given. Resonators with adherent electrodes are investigated and compared with unelectroded resonators. The phase noise measurements are obtained with a crystal resonator tester specifically designed to assist in the characterization of quartz crystal resonators.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125940547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956335
F. Dickert, W. Greibl, C. Haderspock, O. Hayden, A. Rohrer, G. Scholl, U. Wolff
Mass-sensitive devices like the quartz crystal microbalance (QCM) and surface acoustic wave (SAW) devices show a major advantage as a transducer principle as every analyte can be detected due to its mass. In order to transfer QCMs and SAWS into chemical sensors a layer has to be applied in which the desired analyte is preferentially incorporated. Such coatings can vary from molecular hollows like calix[n]arenes to monolayers and molecular imprinted polymers (MIP). MIPs are produced by polymerization of carefully selected monomers around a template, the desired analyte. Such monomers can carry functional groups which interact with the analyte. When the template is removed by evaporation or washed out, it leaves behind specially adapted hollows in respect to size and interactions in which the analyte can be re-included. With these sensitive layers it was possible to achieve selectivities for poly aromatic hydrocarbons which are comparable to that of natural antibodies. Bulk imprinted MIPs allow the synthesis of,highly packed artificial, receptor sites for small organic molecules. The high amount of sites within the coating of a QCM/SAW allows detection limits down to the ppb range. Due to diffusion limitations the imprinting technique has to be adapted to the size of the analyte. The technique is not limited to single compounds, complex mixtures can also be used as templates. In this way it was possible to determine motor oil degradation. Even whole cells can act as imprinting media.
{"title":"QCM and SAW transducers allow analyte detection from nanometer- to micrometer-dimensions using imprinting techniques","authors":"F. Dickert, W. Greibl, C. Haderspock, O. Hayden, A. Rohrer, G. Scholl, U. Wolff","doi":"10.1109/FREQ.2001.956335","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956335","url":null,"abstract":"Mass-sensitive devices like the quartz crystal microbalance (QCM) and surface acoustic wave (SAW) devices show a major advantage as a transducer principle as every analyte can be detected due to its mass. In order to transfer QCMs and SAWS into chemical sensors a layer has to be applied in which the desired analyte is preferentially incorporated. Such coatings can vary from molecular hollows like calix[n]arenes to monolayers and molecular imprinted polymers (MIP). MIPs are produced by polymerization of carefully selected monomers around a template, the desired analyte. Such monomers can carry functional groups which interact with the analyte. When the template is removed by evaporation or washed out, it leaves behind specially adapted hollows in respect to size and interactions in which the analyte can be re-included. With these sensitive layers it was possible to achieve selectivities for poly aromatic hydrocarbons which are comparable to that of natural antibodies. Bulk imprinted MIPs allow the synthesis of,highly packed artificial, receptor sites for small organic molecules. The high amount of sites within the coating of a QCM/SAW allows detection limits down to the ppb range. Due to diffusion limitations the imprinting technique has to be adapted to the size of the analyte. The technique is not limited to single compounds, complex mixtures can also be used as templates. In this way it was possible to determine motor oil degradation. Even whole cells can act as imprinting media.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128375961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956372
Y. Sato, M. Koyama
This paper describes the 622.08 MHz SMD-VCXO, developed for optical transmission applications. By applying WDM technology, it is possible to transmit large volume data. The CDR (Clock Data Recovery), which must be connected with each wavelength signal, is required to be smaller and of lower height by system case size restriction. To transmit the data in high speed, high clock frequency is required. Also, the jitter that causes the transmission error must be reduced. In the oscillator, the fundamental mode 155.52 MHz is oscillated, and 622.08 MHz, which is the 4/sup th/ harmonic, is selected through the band pass filter instead of the conventional resonant circuit. This SMD-VCXO is miniaturized by such a circuit construction. We confirmed that all the target specifications were achieved and jitter was achieved 0.01 UI (Unit Interval) max.
本文介绍了用于光传输应用的622.08 MHz SMD-VCXO。应用波分复用技术，可以实现大容量数据的传输。时钟数据恢复(Clock Data Recovery, CDR)必须连接到每个波长的信号，由于系统外壳尺寸的限制，要求CDR体积更小，高度更低。为了高速传输数据，需要高时钟频率。同时，必须减少引起传输误差的抖动。在振荡器中振荡基模155.52 MHz，通过带通滤波器选择4/sup /谐波622.08 MHz代替传统谐振电路。这种SMD-VCXO通过这种电路结构实现小型化。我们确认所有的目标规格都达到了，抖动达到了0.01 UI(单位间隔)最大值。
{"title":"622.08 MHz SMD-VCXO with filter [for optical transmission application]","authors":"Y. Sato, M. Koyama","doi":"10.1109/FREQ.2001.956372","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956372","url":null,"abstract":"This paper describes the 622.08 MHz SMD-VCXO, developed for optical transmission applications. By applying WDM technology, it is possible to transmit large volume data. The CDR (Clock Data Recovery), which must be connected with each wavelength signal, is required to be smaller and of lower height by system case size restriction. To transmit the data in high speed, high clock frequency is required. Also, the jitter that causes the transmission error must be reduced. In the oscillator, the fundamental mode 155.52 MHz is oscillated, and 622.08 MHz, which is the 4/sup th/ harmonic, is selected through the band pass filter instead of the conventional resonant circuit. This SMD-VCXO is miniaturized by such a circuit construction. We confirmed that all the target specifications were achieved and jitter was achieved 0.01 UI (Unit Interval) max.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130901111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2001-06-06DOI: 10.1109/FREQ.2001.956196
S. Sakharov, O. Buzanov, A. Medvedev, S. Kondratiev, E. Girardet, T. Thorvaldsson
The research results of the influence of different technology parameters of crystal growth and device manufacturing process on SAW velocity variation on langasite (LGS) wafers O 3" are presented. The wafers were made from crystals grown by the Czochralski method along <00.1> and <01.1> directions. The paper also gives a technology process description of langasite crystal growth along <01.1> direction and of making O 3" wafers. SAW velocity measurements were performed utilizing specially developed test structures. The test structures were also used to estimate the device sensitivity due to electrode thickness and electrode width variations of the manufacturing process.. Advantages of LGS wafers for possible SAW device applications are discussed. Due to good temperature stability and a moderately high electromechanical coupling coefficient, langasite is known as a promising material for SAW devices. The filters on LGS have exhibited better electrical parameters than their analogues on quartz and lithium tantalate. In order to demonstrate a practical filter application on LGS, a SAW filter at the center frequency of 114.99 MHz was designed and realized. The chip fits into a 3.8/spl times/3.8 mm/sup 2/ SMD package. Measured performance is in excellent agreement with the predicted response and the chip size was dramatically reduced compared to the state-of-the-art for this kind of filter.
{"title":"The analysis of non-homogeneity of SAW velocity in langasite","authors":"S. Sakharov, O. Buzanov, A. Medvedev, S. Kondratiev, E. Girardet, T. Thorvaldsson","doi":"10.1109/FREQ.2001.956196","DOIUrl":"https://doi.org/10.1109/FREQ.2001.956196","url":null,"abstract":"The research results of the influence of different technology parameters of crystal growth and device manufacturing process on SAW velocity variation on langasite (LGS) wafers O 3\" are presented. The wafers were made from crystals grown by the Czochralski method along <00.1> and <01.1> directions. The paper also gives a technology process description of langasite crystal growth along <01.1> direction and of making O 3\" wafers. SAW velocity measurements were performed utilizing specially developed test structures. The test structures were also used to estimate the device sensitivity due to electrode thickness and electrode width variations of the manufacturing process.. Advantages of LGS wafers for possible SAW device applications are discussed. Due to good temperature stability and a moderately high electromechanical coupling coefficient, langasite is known as a promising material for SAW devices. The filters on LGS have exhibited better electrical parameters than their analogues on quartz and lithium tantalate. In order to demonstrate a practical filter application on LGS, a SAW filter at the center frequency of 114.99 MHz was designed and realized. The chip fits into a 3.8/spl times/3.8 mm/sup 2/ SMD package. Measured performance is in excellent agreement with the predicted response and the chip size was dramatically reduced compared to the state-of-the-art for this kind of filter.","PeriodicalId":369101,"journal":{"name":"Proceedings of the 2001 IEEE International Frequncy Control Symposium and PDA Exhibition (Cat. No.01CH37218)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130937546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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