首页 > 最新文献

2014 Symposium on VLSI Circuits Digest of Technical Papers最新文献

英文 中文
A self-aware processor SoC using energy monitors integrated into power converters for self-adaptation 一种自我感知处理器SoC,将能量监视器集成到功率转换器中以实现自适应
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858424
Yildiz Sinangil, Sabrina M. Neuman, M. Sinangil, N. Ickes, George B. P. Bezerra, Eric Lau, Jason E. Miller, H. Hoffmann, S. Devadas, A. Chandrakasan
This paper presents a self-aware processor with energy monitoring circuits that can measure actual energy consumption of the key blocks. The monitors are embedded into on-chip DC/DC converters and generate results within 10% of accuracy with minimal power (<;0.1%) and area (<;1%) overhead. Our system, which is implemented in 0.18μm technology, is designed to be voltage scalable from 1.8V down to 0.6V. Low-voltage SRAM operation is made possible through the use of 8T bit-cells and write-assists. The d-caches are designed to be re-configurable in associativity and size to adapt to compute- versus cache-bound phases of applications. Cache configuration is performed in <; 3 clock cycles including tag invalidation. These hardware features enable a software self-aware computation engine (SEEC) to dynamically adapt the processor to meet performance and energy goals. Measurement results show that up to 8.4× energy savings can be achieved with DVFS and self-adaptation.
本文提出了一种带有能量监测电路的自感知处理器,可以测量关键模块的实际能耗。监视器嵌入到片上DC/DC转换器中,以最小的功率(< 0.1%)和面积(< 1%)开销产生精度在10%以内的结果。该系统采用0.18μm工艺,电压可从1.8V降至0.6V。通过使用8T位单元和写辅助,使低压SRAM操作成为可能。d-cache被设计成可在关联性和大小上重新配置,以适应应用程序的计算与缓存绑定阶段。缓存配置在<;3个时钟周期,包括标签失效。这些硬件特性使软件自我感知计算引擎(SEEC)能够动态调整处理器以满足性能和能源目标。测量结果表明,采用DVFS和自适应可以实现高达8.4倍的节能。
{"title":"A self-aware processor SoC using energy monitors integrated into power converters for self-adaptation","authors":"Yildiz Sinangil, Sabrina M. Neuman, M. Sinangil, N. Ickes, George B. P. Bezerra, Eric Lau, Jason E. Miller, H. Hoffmann, S. Devadas, A. Chandrakasan","doi":"10.1109/VLSIC.2014.6858424","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858424","url":null,"abstract":"This paper presents a self-aware processor with energy monitoring circuits that can measure actual energy consumption of the key blocks. The monitors are embedded into on-chip DC/DC converters and generate results within 10% of accuracy with minimal power (<;0.1%) and area (<;1%) overhead. Our system, which is implemented in 0.18μm technology, is designed to be voltage scalable from 1.8V down to 0.6V. Low-voltage SRAM operation is made possible through the use of 8T bit-cells and write-assists. The d-caches are designed to be re-configurable in associativity and size to adapt to compute- versus cache-bound phases of applications. Cache configuration is performed in <; 3 clock cycles including tag invalidation. These hardware features enable a software self-aware computation engine (SEEC) to dynamically adapt the processor to meet performance and energy goals. Measurement results show that up to 8.4× energy savings can be achieved with DVFS and self-adaptation.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130556891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
A 7.11mJ/Gb/query data-driven machine learning processor (D2MLP) for big data analysis and applications 7.11mJ/Gb/查询数据驱动机器学习处理器(D2MLP),用于大数据分析和应用
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858422
Chang-Hung Tsai, Tung-Yu Wu, S. Hsu, Chia-Ching Chu, Fang-Ju Ku, Ying-Siou Laio, Chih-Lung Chen, W. Wong, Hsie-Chia Chang, Chen-Yi Lee
A data-driven machine learning processor (D2MLP) with MIMD architecture is designed for big data analysis. Adopting the configurable counting engine array with 3-layer dimension merging, the D2MLP processes maximal 1-128/1024 dimensional data with parallel 64/8 queries in learning stage. Implement in 90nm CMOS technology, the D2MLP achieves 219.9x and 8.2x faster processing time than CPU and GPGPU, respectively. In application phase, maximal 22.7k 128-class classifications/s are performed with the learned density model. Operated at 1.0V and 165MHz, the D2MLP demonstrates an energy-efficient solution for learning and classification with 7.11mJ/Gb/query and 2.3μJ/classification, respectively.
针对大数据分析,设计了一种基于MIMD架构的数据驱动机器学习处理器(D2MLP)。D2MLP采用可配置的三层维合并计数引擎阵列,在学习阶段以并行64/8查询处理最大1-128/1024维数据。采用90nm CMOS技术,D2MLP的处理时间分别比CPU和GPGPU快219.9倍和8.2倍。在应用阶段,使用学习到的密度模型进行最大22.7k 128类分类/s。在1.0V和165MHz下,D2MLP的查询和分类效率分别为7.11 μ j /Gb/查询和2.3μJ/分类,是一种节能的学习和分类解决方案。
{"title":"A 7.11mJ/Gb/query data-driven machine learning processor (D2MLP) for big data analysis and applications","authors":"Chang-Hung Tsai, Tung-Yu Wu, S. Hsu, Chia-Ching Chu, Fang-Ju Ku, Ying-Siou Laio, Chih-Lung Chen, W. Wong, Hsie-Chia Chang, Chen-Yi Lee","doi":"10.1109/VLSIC.2014.6858422","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858422","url":null,"abstract":"A data-driven machine learning processor (D2MLP) with MIMD architecture is designed for big data analysis. Adopting the configurable counting engine array with 3-layer dimension merging, the D2MLP processes maximal 1-128/1024 dimensional data with parallel 64/8 queries in learning stage. Implement in 90nm CMOS technology, the D2MLP achieves 219.9x and 8.2x faster processing time than CPU and GPGPU, respectively. In application phase, maximal 22.7k 128-class classifications/s are performed with the learned density model. Operated at 1.0V and 165MHz, the D2MLP demonstrates an energy-efficient solution for learning and classification with 7.11mJ/Gb/query and 2.3μJ/classification, respectively.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132518111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An 11.5-ENOB 100-MS/s 8mW dual-reference SAR ADC in 28nm CMOS 基于28nm CMOS的11.5-ENOB 100-MS/s 8mW双基准SAR ADC
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858453
M. Inerfield, Abhishek Kamath, Feng Su, Jason Hu, Xinyu Yu, V. Fong, Omar Alnaggar, Fang Lin, T. Kwan
Recent publications have demonstrated ADCs with ENOB > 11, sampling frequencies > 50MHz, with power <; 50mW, making the SAR ADC architecture an attractive alternative to the traditional pipeline. This paper presents a production quality 11.5 ENOB, 89dB SFDR, 100MS/s SAR ADC that, including the voltage reference and digital calibration circuitry, consumes 8mW and uses 0.1mm2 in 28nm CMOS. It uses a unique dual-reference, dual unit-cap architecture with a regulated DAC switch, providing a 2Vppd input swing while utilizing a low-voltage transistor implementation for the core ADC.
最近的出版物展示了ENOB > 11,采样频率> 50MHz,功率<;50mW,使SAR ADC架构成为传统管道的有吸引力的替代方案。本文介绍了一个生产质量11.5 ENOB, 89dB SFDR, 100MS/s SAR ADC,包括参考电压和数字校准电路,功耗8mW,使用0.1mm2的28nm CMOS。它采用独特的双基准、双单元帽架构和一个可调节的DAC开关,提供2Vppd的输入摆幅,同时利用低压晶体管实现核心ADC。
{"title":"An 11.5-ENOB 100-MS/s 8mW dual-reference SAR ADC in 28nm CMOS","authors":"M. Inerfield, Abhishek Kamath, Feng Su, Jason Hu, Xinyu Yu, V. Fong, Omar Alnaggar, Fang Lin, T. Kwan","doi":"10.1109/VLSIC.2014.6858453","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858453","url":null,"abstract":"Recent publications have demonstrated ADCs with ENOB > 11, sampling frequencies > 50MHz, with power <; 50mW, making the SAR ADC architecture an attractive alternative to the traditional pipeline. This paper presents a production quality 11.5 ENOB, 89dB SFDR, 100MS/s SAR ADC that, including the voltage reference and digital calibration circuitry, consumes 8mW and uses 0.1mm2 in 28nm CMOS. It uses a unique dual-reference, dual unit-cap architecture with a regulated DAC switch, providing a 2Vppd input swing while utilizing a low-voltage transistor implementation for the core ADC.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122262331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
A 0.8V, 560fJ/bit, 14Gb/s injection-locked receiver with input duty-cycle distortion tolerable edge-rotating 5/4X sub-rate CDR in 65nm CMOS 一个0.8V, 560fJ/bit, 14Gb/s注入锁定接收器,输入占空比失真可容忍,边缘旋转5/4X子速率CDR, 65nm CMOS
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858399
Hao Li, Shuai Chen, Liqiong Yang, Rui Bai, Weiwu Hu, Freeman Y. Zhong, S. Palermo, P. Chiang
A quarter-rate forwarded-clock receiver utilizes an edge-rotating 5/4X sub-rate CDR for improved jitter tolerance with low power overhead relative to conventional 2X oversampling CDR systems. Low-voltage operation is achieved with efficient quarter-rate clock generation from an injection-locked oscillator (ILO) and through automatic independent phase rotator control that optimizes timing margin of each input quantizer in the presence of receive-side clock static phase errors and transmitter duty-cycle distortion (DCD). Fabricated in GP 65nm CMOS, the receiver operates up to 16Gb/s with a BER<;10-12, achieves a 1MHz phase tracking bandwidth, tolerates ±50%UIpp DCD on input data, and has 14Gb/s energy efficiency of 560fJ/bit at VDD=0.8V.
四分之一速率前向时钟接收机采用边缘旋转5/4X子速率CDR,与传统的2X过采样CDR系统相比,具有较低的功耗开销,从而提高了抖动容忍度。低压操作是通过注入锁定振荡器(ILO)高效的四分之一速率时钟生成和自动独立相位旋转器控制来实现的,该控制在接收端时钟静态相位误差和发射机占空比失真(DCD)存在的情况下优化每个输入量化器的时间裕度。该接收机采用GP 65nm CMOS制造,运行速度高达16Gb/s,误差率< 10-12,相位跟踪带宽为1MHz,可承受输入数据的±50%UIpp DCD,在VDD=0.8V时具有560fJ/bit的14Gb/s能效。
{"title":"A 0.8V, 560fJ/bit, 14Gb/s injection-locked receiver with input duty-cycle distortion tolerable edge-rotating 5/4X sub-rate CDR in 65nm CMOS","authors":"Hao Li, Shuai Chen, Liqiong Yang, Rui Bai, Weiwu Hu, Freeman Y. Zhong, S. Palermo, P. Chiang","doi":"10.1109/VLSIC.2014.6858399","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858399","url":null,"abstract":"A quarter-rate forwarded-clock receiver utilizes an edge-rotating 5/4X sub-rate CDR for improved jitter tolerance with low power overhead relative to conventional 2X oversampling CDR systems. Low-voltage operation is achieved with efficient quarter-rate clock generation from an injection-locked oscillator (ILO) and through automatic independent phase rotator control that optimizes timing margin of each input quantizer in the presence of receive-side clock static phase errors and transmitter duty-cycle distortion (DCD). Fabricated in GP 65nm CMOS, the receiver operates up to 16Gb/s with a BER<;10-12, achieves a 1MHz phase tracking bandwidth, tolerates ±50%UIpp DCD on input data, and has 14Gb/s energy efficiency of 560fJ/bit at VDD=0.8V.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130173805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 2.9mW, +/− 85ppm accuracy reference clock generator based on RC oscillator with on-chip temperature calibration 一个2.9mW, +/−85ppm精度参考时钟发生器基于RC振荡器与片上温度校准
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858450
Yuji Satoh, Hiroyuki Kobayashi, T. Miyaba, S. Kousai
A novel on-chip frequency calibration of temperature dependency is proposed for CMOS reference frequency generator. High-order temperature coefficients are rapidly extracted by employing a carefully designed on-chip heater, so that the frequency deviation due to the temperature variation is accurately estimated, and compensated in digitally by means of all-digital PLL (ADPLL). The proposed technique was implemented in a 0.18um CMOS and achieved ±85ppm accuracy at 24MHz, consuming a power of 2.9mW.
针对CMOS参考频率发生器,提出了一种基于温度相关性的片上频率校准方法。采用精心设计的片上加热器快速提取高阶温度系数,从而准确估计温度变化引起的频率偏差,并通过全数字锁相环(ADPLL)进行数字补偿。该技术在0.18um CMOS上实现,在24MHz下实现±85ppm精度,功耗为2.9mW。
{"title":"A 2.9mW, +/− 85ppm accuracy reference clock generator based on RC oscillator with on-chip temperature calibration","authors":"Yuji Satoh, Hiroyuki Kobayashi, T. Miyaba, S. Kousai","doi":"10.1109/VLSIC.2014.6858450","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858450","url":null,"abstract":"A novel on-chip frequency calibration of temperature dependency is proposed for CMOS reference frequency generator. High-order temperature coefficients are rapidly extracted by employing a carefully designed on-chip heater, so that the frequency deviation due to the temperature variation is accurately estimated, and compensated in digitally by means of all-digital PLL (ADPLL). The proposed technique was implemented in a 0.18um CMOS and achieved ±85ppm accuracy at 24MHz, consuming a power of 2.9mW.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129489926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
A 36 Gbps 16.9 mW/Gbps transceiver in 20-nm CMOS with 1-tap DFE and quarter-rate clock distribution 采用20nm CMOS的36 Gbps 16.9 mW/Gbps收发器,具有1分接DFE和四分之一速率时钟分布
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858359
T. Hashida, Y. Tomita, Yuuki Ogata, Kosuke Suzuki, S. Suzuki, Takanori Nakao, Yuji Terao, Satofumi Honda, Sota Sakabayashi, Ryuichi Nishiyama, A. Konmoto, Yoshitomo Ozeki, H. Adachi, H. Yamaguchi, Y. Koyanagi, H. Tamura
A 36-Gbps transceiver with a continuous-time linear equalizer and a 1-tap DFE in 20-nm CMOS is demonstrated. The transceiver uses a quarter-rate (i.e., 9-GHz) differential-clock distribution to reduce the clock-delivery power. Multi-phase half-rate clock signals that drive the transceiver front-ends are generated by a delay-locked loop and frequency doublers that systematically reduce the impact of skew and jitter. The transceiver occupies 0.55 mm2 and consumes 609.9 mW of power from a 0.9-V supply.
介绍了一种具有连续时间线性均衡器和20nm CMOS 1抽头DFE的36gbps收发器。收发器使用四分之一速率(即9 ghz)差时钟分布来降低时钟传输功率。驱动收发器前端的多相半速率时钟信号由延迟锁定环路和倍频器产生,系统地减少了倾斜和抖动的影响。收发器占地0.55 mm2,在0.9 v电源下消耗609.9 mW的功率。
{"title":"A 36 Gbps 16.9 mW/Gbps transceiver in 20-nm CMOS with 1-tap DFE and quarter-rate clock distribution","authors":"T. Hashida, Y. Tomita, Yuuki Ogata, Kosuke Suzuki, S. Suzuki, Takanori Nakao, Yuji Terao, Satofumi Honda, Sota Sakabayashi, Ryuichi Nishiyama, A. Konmoto, Yoshitomo Ozeki, H. Adachi, H. Yamaguchi, Y. Koyanagi, H. Tamura","doi":"10.1109/VLSIC.2014.6858359","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858359","url":null,"abstract":"A 36-Gbps transceiver with a continuous-time linear equalizer and a 1-tap DFE in 20-nm CMOS is demonstrated. The transceiver uses a quarter-rate (i.e., 9-GHz) differential-clock distribution to reduce the clock-delivery power. Multi-phase half-rate clock signals that drive the transceiver front-ends are generated by a delay-locked loop and frequency doublers that systematically reduce the impact of skew and jitter. The transceiver occupies 0.55 mm2 and consumes 609.9 mW of power from a 0.9-V supply.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124241505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 500MHz blind classification processor for cognitive radios in 40nm CMOS 一种用于认知无线电的40nm CMOS 500MHz盲分类处理器
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858387
Fang-Li Yuan, Tsung-Han Yu, D. Markovic
A blind classification processor for cognitive radios is realized in 40nm CMOS, featuring three-step parameter estimation for a 59× energy saving compared to an exhaustive method, and multi-algorithm feature extraction to distinguish five modulation classes: multicarrier, single-carrier PSK/QAM/MSK, and spread-spectrum signals. The chip consumes 17μJ within 2ms sensing time per classification, achieving ≥95% detection probability (PD) and ≤0.5% false-alarm rate (PFA) at 10dB SNR in a 500MHz channel.
在40nm CMOS上实现了一种认知无线电盲分类处理器,该处理器采用三步参数估计方法,比穷举方法节能59倍,并采用多算法特征提取方法区分多载波、单载波PSK/QAM/MSK和扩频信号5种调制类型。在500MHz信道下,在10dB信噪比下,每组分类的检测时间消耗为17μJ,检测概率≥95%,虚警率≤0.5%。
{"title":"A 500MHz blind classification processor for cognitive radios in 40nm CMOS","authors":"Fang-Li Yuan, Tsung-Han Yu, D. Markovic","doi":"10.1109/VLSIC.2014.6858387","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858387","url":null,"abstract":"A blind classification processor for cognitive radios is realized in 40nm CMOS, featuring three-step parameter estimation for a 59× energy saving compared to an exhaustive method, and multi-algorithm feature extraction to distinguish five modulation classes: multicarrier, single-carrier PSK/QAM/MSK, and spread-spectrum signals. The chip consumes 17μJ within 2ms sensing time per classification, achieving ≥95% detection probability (PD) and ≤0.5% false-alarm rate (PFA) at 10dB SNR in a 500MHz channel.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131640014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A peripheral switchable 3D stacked CMOS image sensor 外围可切换的3D堆叠CMOS图像传感器
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858370
C. Liu, Chin-Hao Chang, H. Tu, C. Chao, F. Hsueh, Szu-Ying Chen, Vincent Hsu, Jen-Cheng Liu, D. Yaung, S. Wuu
A 1.1 um pitch pixel array fabricated by 45 nm 3D stacked technology, can be switched to peripheral circuits on same wafer or to other stacked wafer for process and signal integrity verification. It supports through silicon connection or direct connection to increase the flexibility by separating pixel array and sensing circuit. The novel wide operation range VCO and low power serializer are implemented to reduce the total power and noise.
采用45纳米3D堆叠技术制造的1.1 μ m间距像素阵列,可切换到同一晶圆上的外围电路或其他堆叠晶圆上进行工艺和信号完整性验证。它支持通过硅连接或直接连接,通过将像素阵列和传感电路分离来增加灵活性。采用新颖的宽工作范围压控振荡器和低功率串行器,降低了总功率和噪声。
{"title":"A peripheral switchable 3D stacked CMOS image sensor","authors":"C. Liu, Chin-Hao Chang, H. Tu, C. Chao, F. Hsueh, Szu-Ying Chen, Vincent Hsu, Jen-Cheng Liu, D. Yaung, S. Wuu","doi":"10.1109/VLSIC.2014.6858370","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858370","url":null,"abstract":"A 1.1 um pitch pixel array fabricated by 45 nm 3D stacked technology, can be switched to peripheral circuits on same wafer or to other stacked wafer for process and signal integrity verification. It supports through silicon connection or direct connection to increase the flexibility by separating pixel array and sensing circuit. The novel wide operation range VCO and low power serializer are implemented to reduce the total power and noise.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116790276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 266nW multi-chopper amplifier with 1.38 noise efficiency factor for neural signal recording 用于神经信号记录的266nW多斩波放大器,噪声效率系数为1.38
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858431
Yen-Po Chen, D. Blaauw, D. Sylvester
A low power high efficiency neural signal recording amplifier with a novel multi-chopper technique is proposed and implemented in 180nm CMOS. The input referred rms noise is 1.54μV (1-500Hz) with 266nA tail current. The result corresponds to a 1.38 noise efficiency factor, which is the best reported among current state-of-the-art amplifiers.
提出并实现了一种采用新型多斩波技术的180nm CMOS低功耗高效率神经信号记录放大器。输入参考rms噪声为1.54μV (1-500Hz),尾电流为266nA。结果对应于1.38的噪声效率系数,这是目前最先进的放大器中报道的最好的。
{"title":"A 266nW multi-chopper amplifier with 1.38 noise efficiency factor for neural signal recording","authors":"Yen-Po Chen, D. Blaauw, D. Sylvester","doi":"10.1109/VLSIC.2014.6858431","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858431","url":null,"abstract":"A low power high efficiency neural signal recording amplifier with a novel multi-chopper technique is proposed and implemented in 180nm CMOS. The input referred rms noise is 1.54μV (1-500Hz) with 266nA tail current. The result corresponds to a 1.38 noise efficiency factor, which is the best reported among current state-of-the-art amplifiers.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128707362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 41
A monolithically-integrated optical transmitter and receiver in a zero-change 45nm SOI process 一种零变化45nm SOI工艺的单片集成光发射器和接收器
Pub Date : 2014-06-10 DOI: 10.1109/VLSIC.2014.6858378
M. Georgas, B. Moss, Chen Sun, J. Shainline, J. Orcutt, M. Wade, Yu-hsin Chen, Kareem Nammari, J. Leu, Aravind Srinivasan, Rajeev J Ram, M. Popović, V. Stojanović
An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe detector designed for 1180nm wavelength and performs at 2.5Gb/s with 15μA sensitivity and energy cost of 220fJ/bit.
在没有任何工艺改变的情况下,首次在商业45nm SOI工艺中展示了具有单片集成光子器件和电路的光发射器和接收器。该发射机采用交错结载波耗尽环调制器,工作速度为3.5Gb/s,消光比为8dB,电路和器件的综合能量成本为70fJ/bit。光接收器连接1180nm波长的集成SiGe探测器,灵敏度为15μA,运行速度为2.5Gb/s,能量成本为220fJ/bit。
{"title":"A monolithically-integrated optical transmitter and receiver in a zero-change 45nm SOI process","authors":"M. Georgas, B. Moss, Chen Sun, J. Shainline, J. Orcutt, M. Wade, Yu-hsin Chen, Kareem Nammari, J. Leu, Aravind Srinivasan, Rajeev J Ram, M. Popović, V. Stojanović","doi":"10.1109/VLSIC.2014.6858378","DOIUrl":"https://doi.org/10.1109/VLSIC.2014.6858378","url":null,"abstract":"An optical transmitter and receiver with monolithically-integrated photonic devices and circuits are demonstrated together for the first time in a commercial 45nm SOI process, without any process changes. The transmitter features an interleaved-junction carrier-depletion ring modulator and operates at 3.5Gb/s with an 8dB extinction ratio and combined circuit and device energy cost of 70fJ/bit. The optical receiver connects to an integrated SiGe detector designed for 1180nm wavelength and performs at 2.5Gb/s with 15μA sensitivity and energy cost of 220fJ/bit.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121125132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
期刊
2014 Symposium on VLSI Circuits Digest of Technical Papers
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1