Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930404
R. Velpula, B. Jain, H. Nguyen
We report on the demonstration of electron blocking layer free AlInN nanowire light-emitting diodes (LEDs) operating in the 280–365 nm wavelength region. The molecular beam epitaxial grown AlInN nanowires have a relatively high internal quantum efficiency of > 52%. Moreover, we show that the light extraction efficiency of the nanowires could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to that of the random nanowire arrays. This study provides significant insights into the design and fabrication of a new type of high-performance AlInN nanowire ultraviolet light-emitters.
{"title":"Study on the Quantum Efficiency Enhancement in AlInN Nanowire Light-Emitting Diodes Grown by Molecular Beam Epitaxy","authors":"R. Velpula, B. Jain, H. Nguyen","doi":"10.1109/CSW55288.2022.9930404","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930404","url":null,"abstract":"We report on the demonstration of electron blocking layer free AlInN nanowire light-emitting diodes (LEDs) operating in the 280–365 nm wavelength region. The molecular beam epitaxial grown AlInN nanowires have a relatively high internal quantum efficiency of > 52%. Moreover, we show that the light extraction efficiency of the nanowires could reach ~ 63% for hexagonal photonic crystal nanowire structures which is significantly higher compared to that of the random nanowire arrays. This study provides significant insights into the design and fabrication of a new type of high-performance AlInN nanowire ultraviolet light-emitters.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114253506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930440
R. Howell
Next generation RF systems require RF components capable of maintaining their performance across increasingly wide, multiple octave frequency bandwidths, supporting the operational flexibility and adaptability that is a primary feature of the direct signal conversion based digital back-ends of these architectures. The Superlattice Castellated Feld Effect Transistor (SLCFET) uses stacked AlGaN/GaN heterojunctions that have been etched into parallel nanoribbons between source and drain, in combination with a three dimensional gate structure providing control of the resulting transistor by simultaneously addressing the charge in each individual 2DEG layer of the stacked heterostructures through the sidewalls of the nanoribbons. The device structure of the SLCFET was specifically engineered as a solution to the limits of RF switch performance in FETs that inhibits wideband RF switch based circuit performance, due to the SLCFET topology’s inherent capability of decoupling the transistor’s ON resistance from its OFF capacitance [1] . Since this technology’s first appearance in publication [2] , the process has matured and been extended, with both 6-channel and 10 channel heterostructure based transistors and RF switch MMICs demonstrated [3] , and the 6-channel RF switch process having been qualified and productized, Fig. 1 [4] . The flexibility and broad capabilities of the SLCFET technology as both a high power switch and a low loss, high linearity, fast switching technology have subsequently been demonstrated using this production RF switch process. The high power handling and switching capability of the SLCFET was demonstrated, with a low loss and high isolation 0.1–4 GHz 100W SPDT switch [5] , while the fast switching, high linearity capabilities of the SLCFET were highlighted by the demonstration of a 0.4–2 GHz reconfigurable bandpass filter [6] . The 100W SPDT design demonstrated 10x greater isolation along with ~10% improvement in loss while requiring a ~37% smaller MMIC size than a GaN SPDT designed for the same frequency and power level built using a commercial conventional device process, Fig. 2 . The reconfigurable filter provides over 500 different filter channels, with variable bandwidth and center frequencies, Fig. 3 , all integrated into a single integrated circuit, providing an average of 2 dB improvement for each filter channel in NF and insertion loss, along with ~40x more power handling and ~20x greater linearity than an identical filter built using a state-of-the-art GaAs pHEMT process.
{"title":"SLCFET Technology: Current Progress and Future Directions for Monolithically Integrated Low Loss Switches with High Performance Amplifiers","authors":"R. Howell","doi":"10.1109/CSW55288.2022.9930440","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930440","url":null,"abstract":"Next generation RF systems require RF components capable of maintaining their performance across increasingly wide, multiple octave frequency bandwidths, supporting the operational flexibility and adaptability that is a primary feature of the direct signal conversion based digital back-ends of these architectures. The Superlattice Castellated Feld Effect Transistor (SLCFET) uses stacked AlGaN/GaN heterojunctions that have been etched into parallel nanoribbons between source and drain, in combination with a three dimensional gate structure providing control of the resulting transistor by simultaneously addressing the charge in each individual 2DEG layer of the stacked heterostructures through the sidewalls of the nanoribbons. The device structure of the SLCFET was specifically engineered as a solution to the limits of RF switch performance in FETs that inhibits wideband RF switch based circuit performance, due to the SLCFET topology’s inherent capability of decoupling the transistor’s ON resistance from its OFF capacitance [1] . Since this technology’s first appearance in publication [2] , the process has matured and been extended, with both 6-channel and 10 channel heterostructure based transistors and RF switch MMICs demonstrated [3] , and the 6-channel RF switch process having been qualified and productized, Fig. 1 [4] . The flexibility and broad capabilities of the SLCFET technology as both a high power switch and a low loss, high linearity, fast switching technology have subsequently been demonstrated using this production RF switch process. The high power handling and switching capability of the SLCFET was demonstrated, with a low loss and high isolation 0.1–4 GHz 100W SPDT switch [5] , while the fast switching, high linearity capabilities of the SLCFET were highlighted by the demonstration of a 0.4–2 GHz reconfigurable bandpass filter [6] . The 100W SPDT design demonstrated 10x greater isolation along with ~10% improvement in loss while requiring a ~37% smaller MMIC size than a GaN SPDT designed for the same frequency and power level built using a commercial conventional device process, Fig. 2 . The reconfigurable filter provides over 500 different filter channels, with variable bandwidth and center frequencies, Fig. 3 , all integrated into a single integrated circuit, providing an average of 2 dB improvement for each filter channel in NF and insertion loss, along with ~40x more power handling and ~20x greater linearity than an identical filter built using a state-of-the-art GaAs pHEMT process.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122471388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930433
C. Besancon, N. Vaissière, D. Néel, H. Mehdi, G. Lefévre, V. Muffato, L. Sanchez, F. Fournel, C. Dupré, F. Bassani, J. Decobert
We present a selectively grown AlGaInAs Multi-Quantum Well laser array on silicon covering a 155 nm range over the C+L band achieved by InP seed bonding and MOVPE Selective Area Growth.
{"title":"AlGaInAs Multi-Quantum Well Laser Array on Silicon Achieved by InP-Seed-Bonding and MOVPE Selective Area Growth","authors":"C. Besancon, N. Vaissière, D. Néel, H. Mehdi, G. Lefévre, V. Muffato, L. Sanchez, F. Fournel, C. Dupré, F. Bassani, J. Decobert","doi":"10.1109/CSW55288.2022.9930433","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930433","url":null,"abstract":"We present a selectively grown AlGaInAs Multi-Quantum Well laser array on silicon covering a 155 nm range over the C+L band achieved by InP seed bonding and MOVPE Selective Area Growth.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115394790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930435
Yu-Hsun Wu, Jenq-Shinn Wu, Sheng-Di Lin
GaTe has been used as an n-type dopant source in molecular beam epitaxy (MBE) to grow antimony-based materials. This research is the first to systematically investigate the substrate temperature and III-V flux ratio effects on Te-doping in GaSb matrix. We find that the growth temperature has a great times difference on Te concentration, while the V-III flux ratio does not. The Sb-based high-electron-mobility transistor (HEMT) with intrinsic InAs as the channel layer is grown and processed. Hall measurement gives reasonable electron mobility and sheet concentration at room temperature. Our experimental results show the feasibility of using GaTe as the n-type dopant source for MBE-grown InAs/Al(Ga)Sb HEMT devices.
{"title":"Effect of Substrate Temperature on Te-doping Concentration in GaSb Matrix using GaTe Dopant Source in Molecular Beam Epitaxy","authors":"Yu-Hsun Wu, Jenq-Shinn Wu, Sheng-Di Lin","doi":"10.1109/CSW55288.2022.9930435","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930435","url":null,"abstract":"GaTe has been used as an n-type dopant source in molecular beam epitaxy (MBE) to grow antimony-based materials. This research is the first to systematically investigate the substrate temperature and III-V flux ratio effects on Te-doping in GaSb matrix. We find that the growth temperature has a great times difference on Te concentration, while the V-III flux ratio does not. The Sb-based high-electron-mobility transistor (HEMT) with intrinsic InAs as the channel layer is grown and processed. Hall measurement gives reasonable electron mobility and sheet concentration at room temperature. Our experimental results show the feasibility of using GaTe as the n-type dopant source for MBE-grown InAs/Al(Ga)Sb HEMT devices.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131519176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930413
Cheng Liu, M. Seitz, Matt Dwyer, J. Kirch, S. Pasayat, N. Tansu, Jing Zhang, L. Mawst
High-power InGaN-based violet laser diodes (LDs) have received great attention for their applications such as long-haul illuminations and material processing. 1 In order to achieve robust high-power devices, maintaining a high-quality multiple quantum well (MQW) active region is needed but challenging, since the laser structure requires a higher temperature growth for p-type (Al)GaN cladding layer. Some degree of degradation has been observed for InGaN/GaN quantum wells (QWs) after such high temperature growth. A concept of using an AlGaN cap layer to improve the thermal stability of InGaN/GaN MQWs has been developed and utilized in red-blue wavelength regime. 2 – 4 Besides the thermal stability, the insertion of the AlGaN cap also increases the quantum barrier height, reduces electron leakage, prevents indium out-diffusion from the QW. In this work, we extend such studies to the violet-emission regime for potential high-power laser applications.
{"title":"Optimization of Violet Emitting Quantum Wells with Insertion of AlGaN Layers and Temperature Ramp-up","authors":"Cheng Liu, M. Seitz, Matt Dwyer, J. Kirch, S. Pasayat, N. Tansu, Jing Zhang, L. Mawst","doi":"10.1109/CSW55288.2022.9930413","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930413","url":null,"abstract":"High-power InGaN-based violet laser diodes (LDs) have received great attention for their applications such as long-haul illuminations and material processing. 1 In order to achieve robust high-power devices, maintaining a high-quality multiple quantum well (MQW) active region is needed but challenging, since the laser structure requires a higher temperature growth for p-type (Al)GaN cladding layer. Some degree of degradation has been observed for InGaN/GaN quantum wells (QWs) after such high temperature growth. A concept of using an AlGaN cap layer to improve the thermal stability of InGaN/GaN MQWs has been developed and utilized in red-blue wavelength regime. 2 – 4 Besides the thermal stability, the insertion of the AlGaN cap also increases the quantum barrier height, reduces electron leakage, prevents indium out-diffusion from the QW. In this work, we extend such studies to the violet-emission regime for potential high-power laser applications.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131551570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930458
M. Mebarki, Ragnar Ferrand-Drake del Castillo, Alexey Pavolotskiy, D. Meledin, E. Sundin, M. Thorsell, N. Rorsman, V. Belitsky, V. Desmaris
We report on the successful integration of superconducting Nb gate electrodes to AlGaN/GaN heterostructures and HEMTs for low noise cryogenic applications. First, a specific Nb-gate process was developed and implemented on stand-alone gate test structures. The latter were tested at cryogenic temperatures down to 4 K, using DC end-to-end measurements. The results show a clear transition to a superconducting state at Tc ~ 9.2 K. The superconducting nature of the Nb gates further verified on actual HEMTs, featuring 2 fingers design with gate length of 0.2 μm, through their S-parameters measurements at Tc. Finally, we demonstrate a significant reduction of the gate resistance with superconducting Nb compared to Au-gated transistor with the identical dimensions. The results confirm the potential of the GaN HEMTs with superconducting Nb-gate for low noise operation at cryogenic temperatures.
{"title":"GaN HEMT with superconducting Nb gates for low noise cryogenic applications","authors":"M. Mebarki, Ragnar Ferrand-Drake del Castillo, Alexey Pavolotskiy, D. Meledin, E. Sundin, M. Thorsell, N. Rorsman, V. Belitsky, V. Desmaris","doi":"10.1109/CSW55288.2022.9930458","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930458","url":null,"abstract":"We report on the successful integration of superconducting Nb gate electrodes to AlGaN/GaN heterostructures and HEMTs for low noise cryogenic applications. First, a specific Nb-gate process was developed and implemented on stand-alone gate test structures. The latter were tested at cryogenic temperatures down to 4 K, using DC end-to-end measurements. The results show a clear transition to a superconducting state at Tc ~ 9.2 K. The superconducting nature of the Nb gates further verified on actual HEMTs, featuring 2 fingers design with gate length of 0.2 μm, through their S-parameters measurements at Tc. Finally, we demonstrate a significant reduction of the gate resistance with superconducting Nb compared to Au-gated transistor with the identical dimensions. The results confirm the potential of the GaN HEMTs with superconducting Nb-gate for low noise operation at cryogenic temperatures.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134531881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930382
Ashutosh Kumar, M. Berg, Qin Wang, M. Salter, P. Ramvall
We present a systematic investigation of activation annealing of Mg as p-type doping in GaN. The diffusion of Mg and H by rapid thermal processing (RTP) at 700 °C to 975 °C together with the effect of the ambient gas are investigated by SIMS, XRD, AFM, and electrical measurements. The observed diffusion of H to the substrate emphasizes the importance of understanding the diffusion and reactions of ambient N, O, and H in the GaN layers.We conclude that optimization of the resulting hole density, except the Mg concentration and RTP temperature, the surface morphology, the thickness of the Mg-doped GaN and the thickness of any layer covering it must be considered.
{"title":"p-GaN activation through oxygen-assisted annealing – What is the role of oxygen in activation of Mg-doping of GaN?","authors":"Ashutosh Kumar, M. Berg, Qin Wang, M. Salter, P. Ramvall","doi":"10.1109/CSW55288.2022.9930382","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930382","url":null,"abstract":"We present a systematic investigation of activation annealing of Mg as p-type doping in GaN. The diffusion of Mg and H by rapid thermal processing (RTP) at 700 °C to 975 °C together with the effect of the ambient gas are investigated by SIMS, XRD, AFM, and electrical measurements. The observed diffusion of H to the substrate emphasizes the importance of understanding the diffusion and reactions of ambient N, O, and H in the GaN layers.We conclude that optimization of the resulting hole density, except the Mg concentration and RTP temperature, the surface morphology, the thickness of the Mg-doped GaN and the thickness of any layer covering it must be considered.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124022659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930426
W. Kosaka, K. Ogawa, K. Kusaka, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma
Rocksalt-structured (RS) Zn-doped MgO films were grown on (100) MgO substrates by the mist chemical vapor deposition method. MgO homoepitaxial film exhibited a near-band-edge (NBE) cathodoluminescence peak at 7.63 eV at 6 K. Zn-doping reduced the MgO NBE emission, and alternatively resulted in observation of NBE at around 7.2 eV as a shoulder. Further increase in Zn precursor source ratio drove observation of predominate NBE emission at 6.3 eV. The results ensure a potential to develop a vacuum UV emitter in 170 nm spectral range.
{"title":"Vacuum UV Emission Property of Zn-doped MgO films Grown by Mist Chemical Vapor Deposition Method","authors":"W. Kosaka, K. Ogawa, K. Kusaka, K. Kaneko, T. Yamaguchi, T. Honda, S. Fujita, T. Onuma","doi":"10.1109/CSW55288.2022.9930426","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930426","url":null,"abstract":"Rocksalt-structured (RS) Zn-doped MgO films were grown on (100) MgO substrates by the mist chemical vapor deposition method. MgO homoepitaxial film exhibited a near-band-edge (NBE) cathodoluminescence peak at 7.63 eV at 6 K. Zn-doping reduced the MgO NBE emission, and alternatively resulted in observation of NBE at around 7.2 eV as a shoulder. Further increase in Zn precursor source ratio drove observation of predominate NBE emission at 6.3 eV. The results ensure a potential to develop a vacuum UV emitter in 170 nm spectral range.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121853989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930454
K. Ben Saddik, P. Álamo, J. Lähnemann, R. Volkov, N. Borgardt, T. Flissikowski, O. Brandt, B. J. García, S. Fernández-Garrido
We investigate the optical properties of GaP1−xNx alloys, grown by chemical beam epitaxy (CBE) on (001)-oriented GaP-on-Si substrates, using cathodoluminescence and photoluminescence spectroscopy. In contrast to plasma-assisted molecular beam epitaxy, the optical properties of GaP1−xNx layers grown by CBE are found to be unaffected by ex situ rapid thermal annealing treatments. Regarding the effect of the N mole fraction, the luminescence intensity remains high for compositions up to the lattice match, then it decreases. Temperature-dependent measurements revealed the existence of two independent thermally activated quenching processes as well as the presence of localized states caused by compositional fluctuations. Upon extracting the long-range fluctuation energies, we derived a coupling coefficient value of 2.24 eV to describe the dependence of the band gap energy on x using the band anti-crossing model.
{"title":"Luminescence properties of GaP1−xNx alloys grown on nominally (001)-oriented GaP-on-Si substrates by chemical beam epitaxy","authors":"K. Ben Saddik, P. Álamo, J. Lähnemann, R. Volkov, N. Borgardt, T. Flissikowski, O. Brandt, B. J. García, S. Fernández-Garrido","doi":"10.1109/CSW55288.2022.9930454","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930454","url":null,"abstract":"We investigate the optical properties of GaP1−xNx alloys, grown by chemical beam epitaxy (CBE) on (001)-oriented GaP-on-Si substrates, using cathodoluminescence and photoluminescence spectroscopy. In contrast to plasma-assisted molecular beam epitaxy, the optical properties of GaP1−xNx layers grown by CBE are found to be unaffected by ex situ rapid thermal annealing treatments. Regarding the effect of the N mole fraction, the luminescence intensity remains high for compositions up to the lattice match, then it decreases. Temperature-dependent measurements revealed the existence of two independent thermally activated quenching processes as well as the presence of localized states caused by compositional fluctuations. Upon extracting the long-range fluctuation energies, we derived a coupling coefficient value of 2.24 eV to describe the dependence of the band gap energy on x using the band anti-crossing model.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122815136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930408
A. Mase, Yutaka Nikai, Yusuke Iida, Masaya Takimoto, T. Egawa, M. Miyoshi
The device operations of npn-type GaN-based heterojunction bipolar transistors (HBTs) with different-hole-concentration p-base layers were analyzed via the device simulation. The HBTs with a low-hole-concentration (3.0 × 1017 cm−3) p-base layer exhibited anomalous current behavior. The carrier dynamics analyses indicated that enormous hole currents generated via the following steps. First, even at a low base current injection, the depletion layer occupied most of the p-base layer and caused a kind of the punch-through phenomenon. Then, with the increase in the base current injection, large hole currents generated just around the underneath of the emitter layer. Furthermore, the above enormous hole currents were found to be enhanced with the increase in the energy bandgap offset between the emitter and the base layers.
{"title":"Simulation analyses of carrier dynamics in npn-type GaN-HBTs with different-hole-concentration p-base layers","authors":"A. Mase, Yutaka Nikai, Yusuke Iida, Masaya Takimoto, T. Egawa, M. Miyoshi","doi":"10.1109/CSW55288.2022.9930408","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930408","url":null,"abstract":"The device operations of npn-type GaN-based heterojunction bipolar transistors (HBTs) with different-hole-concentration p-base layers were analyzed via the device simulation. The HBTs with a low-hole-concentration (3.0 × 1017 cm−3) p-base layer exhibited anomalous current behavior. The carrier dynamics analyses indicated that enormous hole currents generated via the following steps. First, even at a low base current injection, the depletion layer occupied most of the p-base layer and caused a kind of the punch-through phenomenon. Then, with the increase in the base current injection, large hole currents generated just around the underneath of the emitter layer. Furthermore, the above enormous hole currents were found to be enhanced with the increase in the energy bandgap offset between the emitter and the base layers.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124492087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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