Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930394
K. Khan, K. Sun, C. Wurm, E. Ahmadi
We have previously reported spontanous formation of InGaN/GaN superlattice structure on nominal InGaN films grown by plasma-assisted molecular beam epitaxy (PAMBE). In this work, we report on the impact of In flux on the formation and periodicity of self-assembled InxGa1-xN/InyGa1-yN superlattice structure (SASL). We show that the thickness and In composition in the InGaN layer varies by changing the In flux. These films were stucturally characterized by X-ray diffraction and simulated by globalfit software to get the thickness and In composition. The superlattice structures were confimred by scanning transmission electron microscopy and the thickness of InGaN layer and In composition were determined by energy dispersive X-ray spectroscopy. This work can provide a method for using the SASL with better control for their optoelectronics application.
{"title":"Impact of In flux on self-assembled InGaN/GaN superlattice grown on GaN template by plasma-assisted molecular beam epitaxy","authors":"K. Khan, K. Sun, C. Wurm, E. Ahmadi","doi":"10.1109/CSW55288.2022.9930394","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930394","url":null,"abstract":"We have previously reported spontanous formation of InGaN/GaN superlattice structure on nominal InGaN films grown by plasma-assisted molecular beam epitaxy (PAMBE). In this work, we report on the impact of In flux on the formation and periodicity of self-assembled InxGa1-xN/InyGa1-yN superlattice structure (SASL). We show that the thickness and In composition in the InGaN layer varies by changing the In flux. These films were stucturally characterized by X-ray diffraction and simulated by globalfit software to get the thickness and In composition. The superlattice structures were confimred by scanning transmission electron microscopy and the thickness of InGaN layer and In composition were determined by energy dispersive X-ray spectroscopy. This work can provide a method for using the SASL with better control for their optoelectronics application.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123225772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930383
Z. Han, H. Lee, B. Bayram, C. Bayram
The rapidly growing demand for power electronics to rout, control, and convert electrical power motivates recent research into devices based on ultra-wide-bandgaps semiconductors. Diamond-based semiconductor devices have drawn increasing attention in high-power applications due to diamond’s extraordinary electrical and physical properties. It has a 5.5 eV band gap and over 7.7MV cm−1 breakdown field. Diamond is also one of the best thermal conductors with thermal conductivity over 2200 Wm−1k−1, making it an ideal material for high power applications where heat dissipation is challenging [1]. To demonstrate diamond’s advantages in power electronics, diamond power diodes and transistors are fabricated with breakdown voltages much higher than devices based on other wide band-gap materials.
{"title":"Diamond Power Electronics: From 1kV towards 10kV Breakdown Voltage","authors":"Z. Han, H. Lee, B. Bayram, C. Bayram","doi":"10.1109/CSW55288.2022.9930383","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930383","url":null,"abstract":"The rapidly growing demand for power electronics to rout, control, and convert electrical power motivates recent research into devices based on ultra-wide-bandgaps semiconductors. Diamond-based semiconductor devices have drawn increasing attention in high-power applications due to diamond’s extraordinary electrical and physical properties. It has a 5.5 eV band gap and over 7.7MV cm−1 breakdown field. Diamond is also one of the best thermal conductors with thermal conductivity over 2200 Wm−1k−1, making it an ideal material for high power applications where heat dissipation is challenging [1]. To demonstrate diamond’s advantages in power electronics, diamond power diodes and transistors are fabricated with breakdown voltages much higher than devices based on other wide band-gap materials.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"419 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123148095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930410
Vijayan Ananthu, K. Akshita, Dhandapani Dhanabalan, S. M. Babu, S. Bhattacharya, E. Varadarajan
This research work focuses on the growth of single crystals of undoped and Sn doped β-Ga2O3 varying doping concentration of 0.05, 0.1, 0.2 wt% by Optical Floating Zone technique. Single crystals of (010) orientation were obtained. The obtained crystals were fully transparent in NIR region and the transparency continued in the visible region as well as in the near UV region. On doping Sn with β-Ga2O3, the n type conductivity increases. This will be useful for optoelectronic applications. The mechanical, structural, optical, electrical and surface properties were measured. Characterizations such as Powder XRD, UV-Vis spectroscopy, micro Vickers hardness, HR-XRD, AFM, hall measurement were done on undoped and Sn doped Ga2O3 single crystals and the results are reported.
{"title":"Studies on the Mechanical, Structural, Optical, Electrical and Surface Properties of Sn Doped Ga2O3 (010) Single Crystals Grown by OFZ Technique","authors":"Vijayan Ananthu, K. Akshita, Dhandapani Dhanabalan, S. M. Babu, S. Bhattacharya, E. Varadarajan","doi":"10.1109/CSW55288.2022.9930410","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930410","url":null,"abstract":"This research work focuses on the growth of single crystals of undoped and Sn doped β-Ga2O3 varying doping concentration of 0.05, 0.1, 0.2 wt% by Optical Floating Zone technique. Single crystals of (010) orientation were obtained. The obtained crystals were fully transparent in NIR region and the transparency continued in the visible region as well as in the near UV region. On doping Sn with β-Ga2O3, the n type conductivity increases. This will be useful for optoelectronic applications. The mechanical, structural, optical, electrical and surface properties were measured. Characterizations such as Powder XRD, UV-Vis spectroscopy, micro Vickers hardness, HR-XRD, AFM, hall measurement were done on undoped and Sn doped Ga2O3 single crystals and the results are reported.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122713999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930385
Jingan Zhou, X. Zhao, Rui Xu, K. Fu, Tao Li, Mingfei Xu, Ziyi He, Jacob T. Robinson, Hanyu Zhu, Xiaodong Zhang, Yuji Zhao
In this work, we report the second-order nonlinear optical susceptibility χ(2) for epsilon phase Gallium Oxide (ε-Ga2O3) thin film on sapphire. ε-Ga2O3 exhibits hexagonal P63mc space group symmetry, which is a non-centrosymmetric structure with non-zero second order susceptibility. By focusing a pulsed laser beam on to a polished ε-Ga2O3 thin film, we collected the generated second harmonic photons with an ultra-sensitive femtowatt photodetector, obtaining effective second-order nonlinear optical susceptibility of χ(2) = 4.89×10−3 pm/V at wavelength of 800 nm. Two different measurement systems collecting reflected and transmitted photons were applied separately to make the result more convincing. The wavelength dependence from 790 nm to 900 nm and polarization dependence from TM mode to TE mode were measured as well. These results will be helpful for the design and fabrication of Ga2O3 based integrated photonics platform in the infrared-visible spectral range.
{"title":"Characterizations of Second-order Nonlinear Optical Susceptibility for ε-phase Gallium Oxide","authors":"Jingan Zhou, X. Zhao, Rui Xu, K. Fu, Tao Li, Mingfei Xu, Ziyi He, Jacob T. Robinson, Hanyu Zhu, Xiaodong Zhang, Yuji Zhao","doi":"10.1109/CSW55288.2022.9930385","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930385","url":null,"abstract":"In this work, we report the second-order nonlinear optical susceptibility χ<sup>(2)</sup> for epsilon phase Gallium Oxide (ε-Ga<inf>2</inf>O<inf>3</inf>) thin film on sapphire. ε-Ga<inf>2</inf>O<inf>3</inf> exhibits hexagonal P6<inf>3</inf>mc space group symmetry, which is a non-centrosymmetric structure with non-zero second order susceptibility. By focusing a pulsed laser beam on to a polished ε-Ga<inf>2</inf>O<inf>3</inf> thin film, we collected the generated second harmonic photons with an ultra-sensitive femtowatt photodetector, obtaining effective second-order nonlinear optical susceptibility of χ<sup>(2)</sup> = 4.89×10<sup>−3</sup> pm/V at wavelength of 800 nm. Two different measurement systems collecting reflected and transmitted photons were applied separately to make the result more convincing. The wavelength dependence from 790 nm to 900 nm and polarization dependence from TM mode to TE mode were measured as well. These results will be helpful for the design and fabrication of Ga<inf>2</inf>O<inf>3</inf> based integrated photonics platform in the infrared-visible spectral range.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125624787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930414
P. Reddy, J. Loveless, Cristyan Quiñones-García, D. Khachariya, R. Kirste, S. Pavlidis, W. Mecouch, S. Mita, B. Moody, J. Tweedie, E. Kohn, R. Collazo, Z. Sitar
In this work, we report on recent advances in UVC emitters and detectors based on AlGaN on single crystal AlN substrates. We perform point defect management via chemical potential control and extended defect management via growth on low threading dislocation density single crystal AlN substrates and demonstrate reliable UVC LEDs at high power densities (>40 Wcm−2) on transparent AlN substrates and high gain (>300000) solar blind avalanche photodiodes with high quantum efficiency (>70%) and near ideal breakdown fields. We also report a comparison with devices on foreign substrates (sapphire) with those on native AlN substrates revealing a general improvement in performance by orders of magnitude.
{"title":"UVC optoelectronics based on AlGaN on AlN single crystal substrates","authors":"P. Reddy, J. Loveless, Cristyan Quiñones-García, D. Khachariya, R. Kirste, S. Pavlidis, W. Mecouch, S. Mita, B. Moody, J. Tweedie, E. Kohn, R. Collazo, Z. Sitar","doi":"10.1109/CSW55288.2022.9930414","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930414","url":null,"abstract":"In this work, we report on recent advances in UVC emitters and detectors based on AlGaN on single crystal AlN substrates. We perform point defect management via chemical potential control and extended defect management via growth on low threading dislocation density single crystal AlN substrates and demonstrate reliable UVC LEDs at high power densities (>40 Wcm−2) on transparent AlN substrates and high gain (>300000) solar blind avalanche photodiodes with high quantum efficiency (>70%) and near ideal breakdown fields. We also report a comparison with devices on foreign substrates (sapphire) with those on native AlN substrates revealing a general improvement in performance by orders of magnitude.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121980469","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930452
D. Mudiyanselage, Dawei Wang, H. Fu
Ultrawide Bandgap kV-class β-Ga2O3/GaN heterojunction based junction barrier Schottky (JBS) diodes are investigated using SILVACO TCAD simulation. The effects of p-GaN region thickness (h), width (w), and spacing (s) on the JBS diodes are comprehensively studied, where conventional β-Ga2O3 Schottky barrier diodes (SBD) are used as a reference. The optimized JBS diodes exhibited higher breakdown voltages and lower leakage than the reference SBDs. Furthermore, different geometries of p-GaN regions were also investigated to optimize electric field distribution and improve breakdown voltages of the JBS diodes. The device with p-GaN regions with corner rounding achieved the highest breakdown voltage of 1275 V compared with devices with rectangular and triangular p-GaN regions. This work can serve as an important reference for the design and demonstration of β-Ga2O3 heterojunction based JBS diodes.
{"title":"Design and Analysis of kV-Class Ultrawide Bandgap β-Ga2O3/p-GaN Heterojunction Barrier Schottky Diodes","authors":"D. Mudiyanselage, Dawei Wang, H. Fu","doi":"10.1109/CSW55288.2022.9930452","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930452","url":null,"abstract":"Ultrawide Bandgap kV-class β-Ga2O3/GaN heterojunction based junction barrier Schottky (JBS) diodes are investigated using SILVACO TCAD simulation. The effects of p-GaN region thickness (h), width (w), and spacing (s) on the JBS diodes are comprehensively studied, where conventional β-Ga2O3 Schottky barrier diodes (SBD) are used as a reference. The optimized JBS diodes exhibited higher breakdown voltages and lower leakage than the reference SBDs. Furthermore, different geometries of p-GaN regions were also investigated to optimize electric field distribution and improve breakdown voltages of the JBS diodes. The device with p-GaN regions with corner rounding achieved the highest breakdown voltage of 1275 V compared with devices with rectangular and triangular p-GaN regions. This work can serve as an important reference for the design and demonstration of β-Ga2O3 heterojunction based JBS diodes.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126465825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930372
D. Rosenzweig, M. Hansemann, P. Ebert, M. Schnedler, H. Eisele
For the nanoscopic analysis of III/V nanowire surfaces, hydrogen cleaning is a commonly used procedure. While this is reported to achieve clean, atomically flat surfaces, the process and dynamics during the cleaning procedure are rarely examined. Here, we investigate the modifications of GaAs(110) as model system introduced by hydrogen supply at room temperature and under commonly used cleaning conditions at the atomic level by scanning tunneling microscopy and -spectroscopy. Understanding this dynamics is crucial for the interpretation of measurements concerning electronic surface properties as well as conductivity measurements, since the surface-to-volume ratio of nanowires is quite high. Clean, cleaved surfaces of n- and p-doped GaAs differ in their appearance as well as in their electronic behavior. These severe changes are analyzed and interpreted with the help of tunneling current simulations.
{"title":"GaAs(110) Surface Modifications Introduced by Hydrogen","authors":"D. Rosenzweig, M. Hansemann, P. Ebert, M. Schnedler, H. Eisele","doi":"10.1109/CSW55288.2022.9930372","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930372","url":null,"abstract":"For the nanoscopic analysis of III/V nanowire surfaces, hydrogen cleaning is a commonly used procedure. While this is reported to achieve clean, atomically flat surfaces, the process and dynamics during the cleaning procedure are rarely examined. Here, we investigate the modifications of GaAs(110) as model system introduced by hydrogen supply at room temperature and under commonly used cleaning conditions at the atomic level by scanning tunneling microscopy and -spectroscopy. Understanding this dynamics is crucial for the interpretation of measurements concerning electronic surface properties as well as conductivity measurements, since the surface-to-volume ratio of nanowires is quite high. Clean, cleaved surfaces of n- and p-doped GaAs differ in their appearance as well as in their electronic behavior. These severe changes are analyzed and interpreted with the help of tunneling current simulations.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132198398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/csw55288.2022.9930423
J. Svensson, P. Olausson, H. Menon, E. Lind, M. Borg
Results on integration of InAs on W films through template assisted selective epitaxy are presented. The InAs crystals are analysed using SEM, electron beam backscattering and in-situ electrical measurements. A high yield of single crystalline InAs can be obtained for certain template diameters and pitches which demonstrates that this is a viable route to integrate III-V semiconductors in the back-end-of-line of CMOS circuits for added functionality.
{"title":"Template-Assisted Selective Epitaxy of InAs on W","authors":"J. Svensson, P. Olausson, H. Menon, E. Lind, M. Borg","doi":"10.1109/csw55288.2022.9930423","DOIUrl":"https://doi.org/10.1109/csw55288.2022.9930423","url":null,"abstract":"Results on integration of InAs on W films through template assisted selective epitaxy are presented. The InAs crystals are analysed using SEM, electron beam backscattering and in-situ electrical measurements. A high yield of single crystalline InAs can be obtained for certain template diameters and pitches which demonstrates that this is a viable route to integrate III-V semiconductors in the back-end-of-line of CMOS circuits for added functionality.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131601405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930375
Jie Huang, Qi Lin, W. Luo, Liying Lin, K. Lau
In this report, we investigate the effects of thermal cycle annealing at high temperature on the defect density and the morphology of GaAs epilayers grown on (001) Si substrates. The defect density of a 2.7 μm-thick GaAs/Si template is 1.4 ×107 cm−2 based on the observation of plan-view transmission electron microscopy, and the surface roughness of the GaAs/Si template is 1.3 nm after the insertion of dislocation filter layers. Optically pumped InP quantum dot microdisk lasers (MDLs) grown on these GaAs/Si templates are fabricated to evaluate the quality of the GaAs/Si templates. Room temperature continuous-wave lasing of the 1.5 μm-diameter MDLs are observed, with very low lasing thresholds ranging from 0.5 to 2 μW.
{"title":"GaAs on (001) Si templates for near infrared InP QD lasers","authors":"Jie Huang, Qi Lin, W. Luo, Liying Lin, K. Lau","doi":"10.1109/CSW55288.2022.9930375","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930375","url":null,"abstract":"In this report, we investigate the effects of thermal cycle annealing at high temperature on the defect density and the morphology of GaAs epilayers grown on (001) Si substrates. The defect density of a 2.7 μm-thick GaAs/Si template is 1.4 ×107 cm−2 based on the observation of plan-view transmission electron microscopy, and the surface roughness of the GaAs/Si template is 1.3 nm after the insertion of dislocation filter layers. Optically pumped InP quantum dot microdisk lasers (MDLs) grown on these GaAs/Si templates are fabricated to evaluate the quality of the GaAs/Si templates. Room temperature continuous-wave lasing of the 1.5 μm-diameter MDLs are observed, with very low lasing thresholds ranging from 0.5 to 2 μW.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"21 9","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113941251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-01DOI: 10.1109/CSW55288.2022.9930373
Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, G. Leake, D. Harame, J. Bowers
We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.
{"title":"Quantum-Dot Lasers Grown on CMOS-compatible 300 mm Si Photonic Wafers","authors":"Kaiyin Feng, C. Shang, E. Hughes, R. Koscica, A. Clark, G. Leake, D. Harame, J. Bowers","doi":"10.1109/CSW55288.2022.9930373","DOIUrl":"https://doi.org/10.1109/CSW55288.2022.9930373","url":null,"abstract":"We demonstrate the first electrically injected quantum dot lasers directly grown on recessed and patterned 300 mm Si photonic wafers, with CW lasing maximum output power higher than 69 mW at 20 °C. This result shows potential for direct heteroepitaxial integration of III–V gain elements onto CMOS-compatible silicon photonic circuits.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116904019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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