Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795539
Shih-kang Lin, Yu-Chen Liu, K. Lin
Blech critical product (BCP) is the product of the metal strip length times its current density passing through, and has served as the threshold for electromigration occurrence. The validity of BCP is still under debates. In this study, we employed in situ synchrotron radiation-based X-ray diffraction, ex situ scanning electron microscopic and transmission electron microscopic analyses to revisit BCP for aluminum strip. We proposed a new mechanism based on electric current-dislocation interaction and stress relaxation to revisit the BCP mechanism. The abnormal microstructures from microscopic analysis support the perspective where a series of complicated defect dynamics process involved in stress relaxation including recovery, recrystallization and grain growth.
{"title":"The Blech effect revisited – an in-situ study","authors":"Shih-kang Lin, Yu-Chen Liu, K. Lin","doi":"10.23919/ICEP55381.2022.9795539","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795539","url":null,"abstract":"Blech critical product (BCP) is the product of the metal strip length times its current density passing through, and has served as the threshold for electromigration occurrence. The validity of BCP is still under debates. In this study, we employed in situ synchrotron radiation-based X-ray diffraction, ex situ scanning electron microscopic and transmission electron microscopic analyses to revisit BCP for aluminum strip. We proposed a new mechanism based on electric current-dislocation interaction and stress relaxation to revisit the BCP mechanism. The abnormal microstructures from microscopic analysis support the perspective where a series of complicated defect dynamics process involved in stress relaxation including recovery, recrystallization and grain growth.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114516519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795565
J. Derakhshandeh, D. La Tulipe, G. Capuz, V. Cherman, C. Gerets, T. Cochet, E. Shafahian, I. D. Preter, G. Jamieson, T. Webers, E. Beyne, G. Beyer, Andy Miller
In this paper an integration flow is introduced for IMC insertion bonding, enabling stacking microbumps with 10um and below pitches. Confined CoSn3 pre-IMC bumps inside the cavities prevent lateral IMC growth and provide mechanical connection between Sn and sharp IMC grains during low temperature TCB process and improve the alignment. Electrical yield of 95% is obtained for single bumps connection of 20, 10 and 7um pitch bumps.
{"title":"Confined IMCs for low temperature and high throughput D2W bonding","authors":"J. Derakhshandeh, D. La Tulipe, G. Capuz, V. Cherman, C. Gerets, T. Cochet, E. Shafahian, I. D. Preter, G. Jamieson, T. Webers, E. Beyne, G. Beyer, Andy Miller","doi":"10.23919/ICEP55381.2022.9795565","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795565","url":null,"abstract":"In this paper an integration flow is introduced for IMC insertion bonding, enabling stacking microbumps with 10um and below pitches. Confined CoSn3 pre-IMC bumps inside the cavities prevent lateral IMC growth and provide mechanical connection between Sn and sharp IMC grains during low temperature TCB process and improve the alignment. Electrical yield of 95% is obtained for single bumps connection of 20, 10 and 7um pitch bumps.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"553 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116644975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795613
Seiya Yamamoto, R. Ishimatsu, K. Okada, Emiri Kato, J. Mizuno, T. Kasahara
We evaluated the performance of a red microfluidic electrogenerated chemiluminescence (ECL) device using tetraphenyldibenzoperiflanthene (DBP) as a fluorescent guest. 5,6,11,12-Tetraphenylnaphthacene (rubrene), which is a well-known yellow fluorescent material, was used as a host molecule and dissolved in an organic solvent with the guest. The microfluidic ECL device with the DBP-doped rubrene solution exhibited a bright red emission originated from DBP with a maximum luminance of 62.0 cd/m2 at a direct current voltage of 5.5 V. By contrast, when the rubrene host was absent from the solution, the ECL emission of DBP was found to be significantly weak. Electrochemical properties of rubrene and DBP were also evaluated by cyclic voltammetry to discuss the emission mechanism.
{"title":"Red Microfluidic Electrogenerated Chemiluminescence Device Using Tetraphenyldibenzoperiflanthene as a Guest Molecule","authors":"Seiya Yamamoto, R. Ishimatsu, K. Okada, Emiri Kato, J. Mizuno, T. Kasahara","doi":"10.23919/ICEP55381.2022.9795613","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795613","url":null,"abstract":"We evaluated the performance of a red microfluidic electrogenerated chemiluminescence (ECL) device using tetraphenyldibenzoperiflanthene (DBP) as a fluorescent guest. 5,6,11,12-Tetraphenylnaphthacene (rubrene), which is a well-known yellow fluorescent material, was used as a host molecule and dissolved in an organic solvent with the guest. The microfluidic ECL device with the DBP-doped rubrene solution exhibited a bright red emission originated from DBP with a maximum luminance of 62.0 cd/m2 at a direct current voltage of 5.5 V. By contrast, when the rubrene host was absent from the solution, the ECL emission of DBP was found to be significantly weak. Electrochemical properties of rubrene and DBP were also evaluated by cyclic voltammetry to discuss the emission mechanism.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"270 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115597700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795629
C. Tsai, C. Chung
The β-chitin nanofiber composite was prepared by the electrospinning method. When β-chitin and its compounds are blended with polyethylene oxide (PEO), the electrospinning performance is significantly improved. The fiber diameter of the mixed β-chitin/PEO nanofiber is about 355nm, but with the longer storage time in a high humidity environment, the fiber diameter will increase to 3.75μm after 7 days, and the melting temperature (Tm) will be 12 oC higher than that of the initial spinning.
{"title":"The Effect of Humidity on the Morphological Evolution of β-Chitin Prepared by Electrospinning","authors":"C. Tsai, C. Chung","doi":"10.23919/ICEP55381.2022.9795629","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795629","url":null,"abstract":"The β-chitin nanofiber composite was prepared by the electrospinning method. When β-chitin and its compounds are blended with polyethylene oxide (PEO), the electrospinning performance is significantly improved. The fiber diameter of the mixed β-chitin/PEO nanofiber is about 355nm, but with the longer storage time in a high humidity environment, the fiber diameter will increase to 3.75μm after 7 days, and the melting temperature (Tm) will be 12 oC higher than that of the initial spinning.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124975876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795417
F. Somidin, T. Akaiwa, S. McDonald, T. Nishimura, Xiaozhou Ye, Anthony Smith, Jiye Zhou, K. Nogita
To minimize solder joint cracking caused by the the polymorphic transformation in Cu6Sn5, the effects of surface finish and reflow conditions were investigated. It was found that interrupted-cooling in reflow profiles minimized cracking in the interfacial Cu6Sn5 intermetallic compound layer of Pb-free solder joints but slower cooling enhanced cracking. The interrupted-cooling reflow condition resulted in improved resistance of the reflowed solder ball to failure in high-speed impact shear tests. In Sn37Pb solder joints, the use of this interrupted-cooling condition did not significantly alter the microstructure or shear strength of the solder on either Cu-OSP or ENIG substrates. The solder joints subject to an interrupted cooling cycle are likely to have the best reliability.
{"title":"Investigation of the Effects of Surface Finish and Reflow Conditions on the Microstructure and Mechanical Properties of Sn-based Solders","authors":"F. Somidin, T. Akaiwa, S. McDonald, T. Nishimura, Xiaozhou Ye, Anthony Smith, Jiye Zhou, K. Nogita","doi":"10.23919/ICEP55381.2022.9795417","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795417","url":null,"abstract":"To minimize solder joint cracking caused by the the polymorphic transformation in Cu6Sn5, the effects of surface finish and reflow conditions were investigated. It was found that interrupted-cooling in reflow profiles minimized cracking in the interfacial Cu6Sn5 intermetallic compound layer of Pb-free solder joints but slower cooling enhanced cracking. The interrupted-cooling reflow condition resulted in improved resistance of the reflowed solder ball to failure in high-speed impact shear tests. In Sn37Pb solder joints, the use of this interrupted-cooling condition did not significantly alter the microstructure or shear strength of the solder on either Cu-OSP or ENIG substrates. The solder joints subject to an interrupted cooling cycle are likely to have the best reliability.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125281645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795473
F. Wilhelmi, Y. Komatsu, S. Yamaguchi, Y. Uchida, R. Nemoto, A. Lindemann
Gallium oxide (Ga2O3) has gained interest as a material for power electronic devices, but its low thermal conductivity poses a substantial challenge. Therefore, this paper investigates assembly strategies for Ga2O3 power diodes using simulative and experimental thermal studies. By substrate thinning from 600 μm to 200 μm, the maximum chip temperature is reduced by more than one third. The lowest rise in junction temperature, close to that of a commercial SiC Schottky diode, can be achieved by flip-chip assembly when the entire anode area is contacted. Yet, small gaps in the contacting area can significantly increase the local peak temperature.
{"title":"Effect of Substrate Thinning and Junction-Side Cooling on Thermal Properties of Ga2O3 Diodes","authors":"F. Wilhelmi, Y. Komatsu, S. Yamaguchi, Y. Uchida, R. Nemoto, A. Lindemann","doi":"10.23919/ICEP55381.2022.9795473","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795473","url":null,"abstract":"Gallium oxide (Ga2O3) has gained interest as a material for power electronic devices, but its low thermal conductivity poses a substantial challenge. Therefore, this paper investigates assembly strategies for Ga2O3 power diodes using simulative and experimental thermal studies. By substrate thinning from 600 μm to 200 μm, the maximum chip temperature is reduced by more than one third. The lowest rise in junction temperature, close to that of a commercial SiC Schottky diode, can be achieved by flip-chip assembly when the entire anode area is contacted. Yet, small gaps in the contacting area can significantly increase the local peak temperature.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"281 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121126807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795630
Hirotatsu Ikarashi, Toshiyuki Sato, S. Teraki, Masaki Yoshida, H. Ozaki
In this paper, we have developed a new low Dk / Df dielectric material for 5G applications. This material is based on modified polyphenylene ether (m-PPE) and elastomer. It can be cured at 200 degrees Celsius. This material has low Dk / Df, high Tg, low water absorption and low warpage properties, therefore it is suitable dielectric layers for 5G Wafer Level Chip Size Packages (WL-CSP) and High-Performance Computing (HPC) substrates.
{"title":"Low Dk / Df Dielectric Material for 5G Applications","authors":"Hirotatsu Ikarashi, Toshiyuki Sato, S. Teraki, Masaki Yoshida, H. Ozaki","doi":"10.23919/ICEP55381.2022.9795630","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795630","url":null,"abstract":"In this paper, we have developed a new low Dk / Df dielectric material for 5G applications. This material is based on modified polyphenylene ether (m-PPE) and elastomer. It can be cured at 200 degrees Celsius. This material has low Dk / Df, high Tg, low water absorption and low warpage properties, therefore it is suitable dielectric layers for 5G Wafer Level Chip Size Packages (WL-CSP) and High-Performance Computing (HPC) substrates.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116355534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795514
H. Numata, J. Héroux, T. Yamane, D. Nakano
We present a demo system of FPGA-driven time-delay photonic reservoir computer. The architecture of the reservoir is based on a high bandwidth density optical interconnect technologies using VCSEL and photodiode chips with multi-mode optical fiber splitter / combiner. Using the demo system, we also present preliminary results on voice utterance dataset.
{"title":"FPGA-driven High Density Photonic Reservoir Computing","authors":"H. Numata, J. Héroux, T. Yamane, D. Nakano","doi":"10.23919/ICEP55381.2022.9795514","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795514","url":null,"abstract":"We present a demo system of FPGA-driven time-delay photonic reservoir computer. The architecture of the reservoir is based on a high bandwidth density optical interconnect technologies using VCSEL and photodiode chips with multi-mode optical fiber splitter / combiner. Using the demo system, we also present preliminary results on voice utterance dataset.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125446029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795430
Shogo Eda, H. Takizawa
It is necessary to detect defect parts on printed wiring boards (PWBs). This paper proposes a segmentation method of PWB images by use of a standard deviation filter and patch-based support vector machine. The proposed method was applied to actual PWB images, and several results were shown.
{"title":"Preliminary Study on Segmentation of Printed Wiring Board Images by use of Standard Deviation Filter and SVM","authors":"Shogo Eda, H. Takizawa","doi":"10.23919/ICEP55381.2022.9795430","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795430","url":null,"abstract":"It is necessary to detect defect parts on printed wiring boards (PWBs). This paper proposes a segmentation method of PWB images by use of a standard deviation filter and patch-based support vector machine. The proposed method was applied to actual PWB images, and several results were shown.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133778842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-05-11DOI: 10.23919/ICEP55381.2022.9795382
Zhi Jin, F. Huo, Xundao Liu, H. Nishikawa
In this study, electromigration (EM) behavior of Sn, Ag, and Cu thin film stripes that are deposited on the glass substrate by using electron-beam physical vapor deposition (EBPVD) has been investigated under a range of current densities. It was found that the Cu stripe shows a better property than the Ag stripe in resisting the EM effect and the EM resistivity of the Ag sample is better than the Sn sample. The reason causing this distinction is attributed to the activation energy (Ea) difference between the variety of metals.
{"title":"Electromigration Comparison Study of Sn, Ag, and Cu Stripes Fabricated by Electron-Beam Physical Vapor Deposition","authors":"Zhi Jin, F. Huo, Xundao Liu, H. Nishikawa","doi":"10.23919/ICEP55381.2022.9795382","DOIUrl":"https://doi.org/10.23919/ICEP55381.2022.9795382","url":null,"abstract":"In this study, electromigration (EM) behavior of Sn, Ag, and Cu thin film stripes that are deposited on the glass substrate by using electron-beam physical vapor deposition (EBPVD) has been investigated under a range of current densities. It was found that the Cu stripe shows a better property than the Ag stripe in resisting the EM effect and the EM resistivity of the Ag sample is better than the Sn sample. The reason causing this distinction is attributed to the activation energy (Ea) difference between the variety of metals.","PeriodicalId":413776,"journal":{"name":"2022 International Conference on Electronics Packaging (ICEP)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134406451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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