Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8558056
Xinan Zhang, G. Foo
This paper presents a simple and stable overmodulation scheme for direct torque controlled synchronous reluctance motor (SRM) drives incorporating field-weakening (FW) operation. It contributes to produce fast torque response and extended constant power speed range for SRM drives. Moreover, an adaptive activation mechanism is proposed to ensure the stability of drives under all operating conditions. Besides, the problems of high torque ripples and variable switching frequency experienced by conventional direct torque control are solved by employing a constant switching frequency based torque regulator and combining it with the proposed over-modulation scheme. Simulation and experimental results are provided to verify the effectiveness of the proposed approach.
{"title":"Over-Modulation with Improved Stability for Synchronous Reluctance Motor Drives Incorporating Field-Weakening Operation","authors":"Xinan Zhang, G. Foo","doi":"10.1109/ECCE.2018.8558056","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8558056","url":null,"abstract":"This paper presents a simple and stable overmodulation scheme for direct torque controlled synchronous reluctance motor (SRM) drives incorporating field-weakening (FW) operation. It contributes to produce fast torque response and extended constant power speed range for SRM drives. Moreover, an adaptive activation mechanism is proposed to ensure the stability of drives under all operating conditions. Besides, the problems of high torque ripples and variable switching frequency experienced by conventional direct torque control are solved by employing a constant switching frequency based torque regulator and combining it with the proposed over-modulation scheme. Simulation and experimental results are provided to verify the effectiveness of the proposed approach.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131749999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8557867
Narayanar K Nakul, S. Shan, L. Umanand
This paper presents a novel parallel RLC resonant load emulation technique for anti-islanding test. In an anti-islanding test setup, the load parameters R, L and C vary as they are dependent on the distributed generation (DG) rating. With the proposed emulation technique, the parameters R, L and C of the load can be controlled, while preserving the dynamic behaviour of the passive load, under all operating conditions. Two different current control methods for emulation are discussed. A two-level voltage source inverter (VSI) is used to emulate the RLC load. The results are verified using detailed time domain modelling in PSCAD/EMTDC for different type of DGs. The steady state performance of the proposed emulation technique is verified experimentally for different type of loads.
{"title":"A Novel RLC Load Emulation for Anti-Islanding Test Bench for Inverter and Machine Based Distributed Generation","authors":"Narayanar K Nakul, S. Shan, L. Umanand","doi":"10.1109/ECCE.2018.8557867","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8557867","url":null,"abstract":"This paper presents a novel parallel RLC resonant load emulation technique for anti-islanding test. In an anti-islanding test setup, the load parameters R, L and C vary as they are dependent on the distributed generation (DG) rating. With the proposed emulation technique, the parameters R, L and C of the load can be controlled, while preserving the dynamic behaviour of the passive load, under all operating conditions. Two different current control methods for emulation are discussed. A two-level voltage source inverter (VSI) is used to emulate the RLC load. The results are verified using detailed time domain modelling in PSCAD/EMTDC for different type of DGs. The steady state performance of the proposed emulation technique is verified experimentally for different type of loads.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"255 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131789278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8557760
D. Marroquí, A. Garrigós, J. Blanes, R. Gutiérrez, E. Maset
This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.
{"title":"SiC Based Latching Current Limiter for High Voltage Space Power Distribution Systems","authors":"D. Marroquí, A. Garrigós, J. Blanes, R. Gutiérrez, E. Maset","doi":"10.1109/ECCE.2018.8557760","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8557760","url":null,"abstract":"This study presents a novel Latching Current Limiter topology, based on a N-channel Silicon Carbide (SiC) MOSFET as the main switching element. The design has been carried out using only discrete components, without digital controllers. This design has been validated by simulation and with a prototype. Tests have been performed at 1000V, modifying the limitation times, current-limiting values and eventually checking the proper operation of the system.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127566341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8558264
Le Yang, H Zhao, Shuo Wang, Yongjian Zhi
Spectrum analyzers are usually used in measuring the electromagnetic interference (EMI) noise in power electronics systems. However, based on the EMI standards, the measuring of the EMI emissions of the equipment under test (EUT) could be very time-consuming. Conventionally, the fast Fourier transform (FFT) results of the noise signals are used to evaluate the EUT's EMI performance. However, these results are not compatible with EMI standards, and have large difference compared with the standard-compliant measurement. In this paper, a technique to predict the EMI noise spectrum of any input time-domain waveform is proposed. The simulator emulates the spectrum analyzer's performance based on EMI standards. The prediction results from the proposed technique match the EMI standard-compliant measurement results very well in a wide frequency range, with different power converter applications and modulation strategies. Meanwhile, the prediction results can be obtained in a very short time which is much faster than measurement process.
{"title":"A Technique to Accurately Predict EMI Noise Spectrum in Wide Frequency Ranges Based on the Principles of Spectrum Analyzers","authors":"Le Yang, H Zhao, Shuo Wang, Yongjian Zhi","doi":"10.1109/ECCE.2018.8558264","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8558264","url":null,"abstract":"Spectrum analyzers are usually used in measuring the electromagnetic interference (EMI) noise in power electronics systems. However, based on the EMI standards, the measuring of the EMI emissions of the equipment under test (EUT) could be very time-consuming. Conventionally, the fast Fourier transform (FFT) results of the noise signals are used to evaluate the EUT's EMI performance. However, these results are not compatible with EMI standards, and have large difference compared with the standard-compliant measurement. In this paper, a technique to predict the EMI noise spectrum of any input time-domain waveform is proposed. The simulator emulates the spectrum analyzer's performance based on EMI standards. The prediction results from the proposed technique match the EMI standard-compliant measurement results very well in a wide frequency range, with different power converter applications and modulation strategies. Meanwhile, the prediction results can be obtained in a very short time which is much faster than measurement process.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"195 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125230177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8557414
Xiaofeng Ding, Donghuai Zhang
A novel non-dissipative two-stage equalization circuit topology based on the traditional buck-boost circuit is proposed to achieve balancing of series-connected lithium-ion battery packs with higher efficiency and less cost, considering the background on international energy issues and the development trend of battery balancing. Detailed illustration of the presented topology is covered and the operation principles and control approaches are described with visualized figures. Then, under the condition of accurate modeling of the lithiumion battery, relying on the experimental data, the simulation block is built based on MATLAB and the effectiveness of the proposed topology is verified preliminarily. What's more, the results of the simulation are indicated and the comparison between the novel topology and the traditional one is analyzed at the end.
{"title":"A Novel Active Equalization Topology for Series-Connected Lithium-ion Battery Packs","authors":"Xiaofeng Ding, Donghuai Zhang","doi":"10.1109/ECCE.2018.8557414","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8557414","url":null,"abstract":"A novel non-dissipative two-stage equalization circuit topology based on the traditional buck-boost circuit is proposed to achieve balancing of series-connected lithium-ion battery packs with higher efficiency and less cost, considering the background on international energy issues and the development trend of battery balancing. Detailed illustration of the presented topology is covered and the operation principles and control approaches are described with visualized figures. Then, under the condition of accurate modeling of the lithiumion battery, relying on the experimental data, the simulation block is built based on MATLAB and the effectiveness of the proposed topology is verified preliminarily. What's more, the results of the simulation are indicated and the comparison between the novel topology and the traditional one is analyzed at the end.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130882177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8558241
Zhiwen Yu, Yuquan Liu, W. Xiong, Li Wang, Ying Cai, Renbo Wu, Huangsheng Hua, S. Zeng
Based on the multi-agent system, this paper presents a novel real-time optimization strategy for microgrid, in which distributed generations (DGs) are parallel-connected through droop control. The economic dispatch consists of three stages: 1). A first-order consensus protocol is adopted to obtain the optimal active power regardless of the voltage and frequency regulation. 2). To track the reference, a novel secondary-order consensus protocol is proposed. 3). To optimize the system frequency and voltage, another secondary-order consensus protocol is used to control the droop parameters adaptively. In this paper, the consensus protocol at each stage is fully distributed, in which each agent only requires its neighbors' information. Moreover, the system has globally asymptotic stability proved by the extended Lyapunov theorem. Lastly, simulation cases are studied to validate the proposed strategy.
{"title":"A Novel Multi-Stage Economic Dispatch of Microgrid Based on Consensus Protocol of Multi-Agent System","authors":"Zhiwen Yu, Yuquan Liu, W. Xiong, Li Wang, Ying Cai, Renbo Wu, Huangsheng Hua, S. Zeng","doi":"10.1109/ECCE.2018.8558241","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8558241","url":null,"abstract":"Based on the multi-agent system, this paper presents a novel real-time optimization strategy for microgrid, in which distributed generations (DGs) are parallel-connected through droop control. The economic dispatch consists of three stages: 1). A first-order consensus protocol is adopted to obtain the optimal active power regardless of the voltage and frequency regulation. 2). To track the reference, a novel secondary-order consensus protocol is proposed. 3). To optimize the system frequency and voltage, another secondary-order consensus protocol is used to control the droop parameters adaptively. In this paper, the consensus protocol at each stage is fully distributed, in which each agent only requires its neighbors' information. Moreover, the system has globally asymptotic stability proved by the extended Lyapunov theorem. Lastly, simulation cases are studied to validate the proposed strategy.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131232929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8558261
Kwon-sik Park, Byuong-Jun Seo, Kyoung-Suk Kang, Kwang-Rae Jo, Hee-Chang Choi, E. Nho
A Voltage Sourced Converter (VSC) for High Voltage Direct Current (HVDC) operates in extremely high voltage and high-power conditions. Especially in case of Modular Multilevel Converter (MMC), hundreds of submodules are connected in series to meet the high voltage requirement. IEC 62501 suggests several tests such as the operational tests for a valve consisting of several submodules and the dielectric tests, etc. This paper proposes a new test circuit for the submodule in MMC-based HVDC system. Simulations are carried out for a system with the power rating of 2.4 [kV] and 485 [A], and both the simulation and scaled down experimental results show the validity of the proposed test circuit.
{"title":"Submodule Test Circuit for MMC-based Voltage Sourced HVDC System","authors":"Kwon-sik Park, Byuong-Jun Seo, Kyoung-Suk Kang, Kwang-Rae Jo, Hee-Chang Choi, E. Nho","doi":"10.1109/ECCE.2018.8558261","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8558261","url":null,"abstract":"A Voltage Sourced Converter (VSC) for High Voltage Direct Current (HVDC) operates in extremely high voltage and high-power conditions. Especially in case of Modular Multilevel Converter (MMC), hundreds of submodules are connected in series to meet the high voltage requirement. IEC 62501 suggests several tests such as the operational tests for a valve consisting of several submodules and the dielectric tests, etc. This paper proposes a new test circuit for the submodule in MMC-based HVDC system. Simulations are carried out for a system with the power rating of 2.4 [kV] and 485 [A], and both the simulation and scaled down experimental results show the validity of the proposed test circuit.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130851142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8557489
Yue Xu, Mona Ghessemi, Jun Wang, R. Burgos, D. Boroyevich
As a consequence of higher blocking voltage and power density by using SiC devices, detailed analysis and careful design of electrical insulation are required. High partial discharge initiated from high electric field regions damages the insulation materials and leads to insulation failure. Therefore, the study of the electric field intensity distribution in all components of a high power density SiC-based converter and among multiple converters, if modular multilevel converter used, is needed. In this paper, a three-dimensional model developed in ANSYS of a high power density H-Bridge PEBB, benefiting from 10 kV SiC MOSFETs on a 6 kV DC bus, is presented. Using the finite element method, the electric field distribution inside the converter is calculated, and critical areas with high electric field intensities prone to initiate partial discharges are identified. Moreover, by using this model, geometry-based modifications are investigated to relieve high electric field regions. Finally, partial discharge tests have been applied to multiple critical parts, like the laminated bus and the interconnectors. It helps evaluate various insulation designs, provide some design guidelines and improvement suggestions for such application as well.
由于使用SiC器件具有更高的阻断电压和功率密度，因此需要详细分析和仔细设计电绝缘。高电场区引发的高局部放电会破坏绝缘材料，导致绝缘失效。因此，在采用模块化多电平变换器的情况下，有必要研究高功率密度sic基变换器各部件及多个变换器之间的电场强度分布。本文介绍了在ANSYS中建立的高功率密度h桥PEBB的三维模型，该模型得益于6 kV直流母线上10 kV SiC mosfet。采用有限元法计算了变换器内部电场分布，确定了高电场强度容易引发局部放电的临界区域。此外，利用该模型，研究了基于几何的修正以减轻高电场区域。最后，局部放电试验已应用于多个关键部件，如层压母线和互连。它有助于评估各种绝缘设计，并为此类应用提供一些设计指南和改进建议。
{"title":"Electrical Field Analysis and Insulation Evaluation of a 6 kV H-bridge Power Electronics Building Block (PEBB) using 10 kV SiC MOSFET Devices","authors":"Yue Xu, Mona Ghessemi, Jun Wang, R. Burgos, D. Boroyevich","doi":"10.1109/ECCE.2018.8557489","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8557489","url":null,"abstract":"As a consequence of higher blocking voltage and power density by using SiC devices, detailed analysis and careful design of electrical insulation are required. High partial discharge initiated from high electric field regions damages the insulation materials and leads to insulation failure. Therefore, the study of the electric field intensity distribution in all components of a high power density SiC-based converter and among multiple converters, if modular multilevel converter used, is needed. In this paper, a three-dimensional model developed in ANSYS of a high power density H-Bridge PEBB, benefiting from 10 kV SiC MOSFETs on a 6 kV DC bus, is presented. Using the finite element method, the electric field distribution inside the converter is calculated, and critical areas with high electric field intensities prone to initiate partial discharges are identified. Moreover, by using this model, geometry-based modifications are investigated to relieve high electric field regions. Finally, partial discharge tests have been applied to multiple critical parts, like the laminated bus and the interconnectors. It helps evaluate various insulation designs, provide some design guidelines and improvement suggestions for such application as well.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132886083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8557820
V. Chalishazar, Brandon Johnson, E. Cotilla-Sánchez, T. Brekken
Today, the majority of power system software implement the well known Bus-Branch (BB) model where it is safe to assume a balanced three-phase network. Unfortunately, the traditional way of modeling power systems using a BB model abstracts the individual components that make up a highvoltage substation. These are critically important when assessing substation related faults which is a crucial step in attempting to make a more resilient grid. This paper presents a way of modeling typical substation protection schemes, using an augmented Bus-Branch (a-BB) representation, for contingency analysis applications. Further, the impacts and benefits of augmenting the IEEE Reliability Test System 1996 (RTS-96) system are described. The experiments in this paper show at least a 17% decrease in the number of non-converging power-flow solutions for all $N-2$ contingencies simulated on the augmented RTS-96 (a-RTS) system.
{"title":"Augmenting the Traditional Bus-Branch Model for Seismic Resilience Analysis","authors":"V. Chalishazar, Brandon Johnson, E. Cotilla-Sánchez, T. Brekken","doi":"10.1109/ECCE.2018.8557820","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8557820","url":null,"abstract":"Today, the majority of power system software implement the well known Bus-Branch (BB) model where it is safe to assume a balanced three-phase network. Unfortunately, the traditional way of modeling power systems using a BB model abstracts the individual components that make up a highvoltage substation. These are critically important when assessing substation related faults which is a crucial step in attempting to make a more resilient grid. This paper presents a way of modeling typical substation protection schemes, using an augmented Bus-Branch (a-BB) representation, for contingency analysis applications. Further, the impacts and benefits of augmenting the IEEE Reliability Test System 1996 (RTS-96) system are described. The experiments in this paper show at least a 17% decrease in the number of non-converging power-flow solutions for all $N-2$ contingencies simulated on the augmented RTS-96 (a-RTS) system.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"23 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132939085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-09-01DOI: 10.1109/ECCE.2018.8557909
Amaury Gendron-Hansen, D. Sdrulla, A. Kashyap, B. Odekirk, W. Brower, L. Thornhill
A test procedure for repetitive unclamped inductive switching (R-UIS) is presented and the results are reported for state-of-the-art 4H-SiC Schottky barrier diodes (SBDs) and MOSFETs. The energies at failure are 8.3, 8.9, and 10.3 J/cm2 for SBD parts rated to 700, 1200, and 1700 V, respectively. The cumulative thermal effects are intentionally weak for this evaluation, and under these conditions the energies to failure are less than 10% lower for repetitive than single-pulse UIS. $1200 mathbf{V}/40 mathbf{m} mathbf{Omega}$ MOSFET parts were stressed with 100 mJ pulses and the integrity of the gate oxide was assessed with a TDDB test. The times to failure for fresh and stressed parts are effectively the same. Tests on parts from several SiC device suppliers showed that high R-UIS ruggedness is a major differentiator of Microsemi's SiC technology.
{"title":"4H-SiC Junction Barrier Schottky Diodes and Power MOSFETs with High Repetitive UIS Ruggedness","authors":"Amaury Gendron-Hansen, D. Sdrulla, A. Kashyap, B. Odekirk, W. Brower, L. Thornhill","doi":"10.1109/ECCE.2018.8557909","DOIUrl":"https://doi.org/10.1109/ECCE.2018.8557909","url":null,"abstract":"A test procedure for repetitive unclamped inductive switching (R-UIS) is presented and the results are reported for state-of-the-art 4H-SiC Schottky barrier diodes (SBDs) and MOSFETs. The energies at failure are 8.3, 8.9, and 10.3 J/cm2 for SBD parts rated to 700, 1200, and 1700 V, respectively. The cumulative thermal effects are intentionally weak for this evaluation, and under these conditions the energies to failure are less than 10% lower for repetitive than single-pulse UIS. $1200 mathbf{V}/40 mathbf{m} mathbf{Omega}$ MOSFET parts were stressed with 100 mJ pulses and the integrity of the gate oxide was assessed with a TDDB test. The times to failure for fresh and stressed parts are effectively the same. Tests on parts from several SiC device suppliers showed that high R-UIS ruggedness is a major differentiator of Microsemi's SiC technology.","PeriodicalId":415217,"journal":{"name":"2018 IEEE Energy Conversion Congress and Exposition (ECCE)","volume":"171 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133361826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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