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2018 IEEE 22nd Workshop on Signal and Power Integrity (SPI)最新文献

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Impact of chip and interposer PDN to eye diagram in high speed channels 芯片和中间体PDN对高速信道眼图的影响
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401673
F. de Paulis, Biyao Zhao, S. Piersanti, Jonghyun Cho, R. Cecchetti, B. Achkir, A. Orlandi, J. Fan
The paper applies the combined SI-PI co-simulation to on chip high speed interconnects. A complete model of chip and interposer PDN is developed and, together to a lumped model of the PCB and package PDN, it is employed to supply I/O drivers for HBM traces laid out on silicon interposer. A comprehensive analysis is carried out highlighting the impact of the decoupling capacitor placement and their corresponding parasitic inductance on the supply voltage ripple and on the output eye diagram at the signal receivers.
本文将SI-PI联合仿真应用于片上高速互连。开发了一个完整的芯片和中间层PDN模型,并与PCB和封装PDN的集总模型一起,用于为硅中间层上的HBM走线提供I/O驱动。全面分析了去耦电容放置及其相应寄生电感对电源电压纹波和信号接收器输出眼图的影响。
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引用次数: 4
Simulation of Nonuniform coupled transmission lines using approximated S-parameters model 用近似s参数模型模拟非均匀耦合传输线
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401652
A. Wardzinska, W. Bandurski
The paper presents the method of approximated S-Parameters calculation in application of Nonuniform Coupled Transmission Lines. In the work we present the network with two coupled tapered lines. The space dependence of RLC parameters of the lines are interpolated with analytical functions. The S parameters are calculated using the method of successive approximation. The output response to the trapezoidal input is presented and compared with the numerical solution of exact integral equations of the lines.
本文介绍了近似s参数计算方法在非均匀耦合传输线中的应用。在这项工作中,我们提出了具有两条耦合锥形线的网络。用解析函数对线的RLC参数的空间依赖性进行了插值。采用逐次逼近法计算S参数。给出了梯形输入的输出响应,并与直线精确积分方程的数值解进行了比较。
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引用次数: 0
An on-chip load model for off-chip PDN analysis considering interdependency between supply voltage, current profile and clock latency 片外PDN分析的片上负载模型,考虑了电源电压、电流分布和时钟延迟之间的相互依赖性
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401655
Jun Chen, T. Kanamoto, H. Kando, M. Hashimoto
Simple yet accurate on-chip load model is demanded for off-chip power delivery network (PDN) design and verification. Conventionally, a current source that represents a short chip operation period is used for this purpose, but it cannot consider the interdependency between supply voltage, load current and clock latency. The ignorance of this interdependency could mislead off-chip PDN design causing over- and under-design. To address this issue, this paper proposes an on-chip load model with Verilog-A that can replay the load current and clock latency under dynamic supply noise. The model is expanded to support different chip operation modes, and it can be used as a sub-model to construct a large chip model. Experiment shows over 200X run-time improvement comparing with full SPICE netlist simulation. We also confirm that the current profile, power consumption, and clock latency are closely correlated.
片外供电网络(PDN)的设计和验证需要简单而准确的片上负载模型。传统上,表示短芯片工作周期的电流源用于此目的,但它不能考虑电源电压,负载电流和时钟延迟之间的相互依赖性。忽略这种相互依赖性可能会误导片外PDN设计,导致设计过度和设计不足。为了解决这个问题,本文提出了一个带有Verilog-A的片上负载模型,该模型可以在动态电源噪声下重播负载电流和时钟延迟。该模型进行了扩展以支持不同的芯片运行模式,并可作为子模型来构建大型芯片模型。实验表明,与全SPICE网络列表仿真相比,运行时间提高了200倍以上。我们还确认当前配置文件、功耗和时钟延迟密切相关。
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引用次数: 0
Impedance measurement in operating conditions for PLC applications PLC操作条件下的阻抗测量
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401649
O. Sabo, L. Pace, J. L. Le Bunetel, Anne-Sophie Descamps, C. Batard, N. Idir
The influence of the electromagnetic environment of the indoor power line grid (Houses' Power Grid) is increasingly important on the Power Line Communication transmission. The household equipment operating changes considerably the network impedance. Several procedures exist to evaluate the network impedance. Two impedance measurement techniques seem to be the most adequate and allow to characterize loads under their operating conditions. The first one uses current injection and reception probes and the second one uses capacitive coupling. With a proper pre-measurement calibration process, the proposed methods allow to measure the evolution of the impedance versus frequency of the active loads (TV screen, Fluorescent lamp…). This study deals with the analyses of these two methods in order to evaluate their advantages and disadvantages. The measurements are carried in narrowband and broadband in the frequency range of 10 kHz to 100 MHz.
室内电力线电网的电磁环境对电力线通信传输的影响越来越重要。家用设备的运行对网络阻抗的影响很大。存在几个程序来评估网络阻抗。两种阻抗测量技术似乎是最适当的,并允许在其工作条件下表征负载。第一个使用电流注入和接收探头,第二个使用电容耦合。通过适当的测量前校准过程,所提出的方法可以测量主动负载(电视屏幕,荧光灯…)的阻抗随频率的变化。本文对这两种方法进行了分析,以评价它们的优缺点。测量在窄带和宽带中进行,频率范围为10khz至100mhz。
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引用次数: 1
Evaluation and comparison of mounted inductance for decoupling capacitor 去耦电容安装电感的评估与比较
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401647
Benoît Goral, C. Gautier, A. Amédéo
In this article, different patterns for decoupling capacitor routed on a dedicated test vehicle are compared. The aim of this study is, on one hand to confirm design rules for enhanced decoupling on printed circuit board and on the other hand, to estimate the value of the mounted inductance introduced by each pattern. Each mounting pattern and the particular parameter which is studied for each case will be described and measurement methodology as mounted inductance calculation will be presented. Then, mounted inductance calculated from measurement and results given by simulation are compared in order to see the precision reached by recent hybrid EM solver dedicated to Printed Circuit Board for parasitic elements calculation. Finally design rules and trade off for better decoupling are given as a conclusion.
在这篇文章中,比较了在一个专用测试车上不同的去耦电容路由模式。本研究的目的一方面是确认印刷电路板上增强去耦的设计规则,另一方面是估计每个图案引入的安装电感的值。将描述每种安装模式和每种情况下研究的特定参数,并介绍安装电感计算的测量方法。然后,将测量所得的安装电感值与仿真所得的结果进行了比较,比较了近年来专用于印刷电路板的混合电磁求解器在计算寄生元件时所达到的精度。最后给出了更好解耦的设计规则和权衡作为结论。
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引用次数: 0
DDR5 design challenges DDR5设计挑战
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401666
B. Nitin, W. Randy, Ikeda Shinichiro, Fujine Eiji, Ryouichi Shibata, Sugaya Yumiko, Ono Megumi
Operating a DDR4 memory channel at speeds of only 2666MT/s can be a challenge for multi-slot setups. So what will be required in the next-generation DDR5 memory busses to enable them to run at speeds of 3200MT/s and above? What are the implications for controllers, and how does one plan the supported topologies for a given controller?
对于多插槽设置来说,以仅2666MT/s的速度操作DDR4内存通道可能是一个挑战。那么,下一代DDR5内存总线需要什么才能使它们以3200MT/s或更高的速度运行呢?控制器的含义是什么?如何为给定的控制器规划受支持的拓扑?
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引用次数: 10
Eye diagram estimation and equalizer design method for PAM4 PAM4眼图估计及均衡器设计方法
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401645
Wei-Ju Chang, R. Wu
The extended peak distortion analysis (ePDA) is proposed in this paper for the eye diagram estimation of high speed interconnects in PAM4. The method can construct the eye diagram much faster than by PRBS eye simulation. In addition, the genetic algorithm is established to find the optimal tap numbers and coefficients of the feed-forward equalizer (FFE) so as to minimize the inter-symbol interference (ISI) effectively and efficiently.
本文提出了扩展峰值失真分析(ePDA),用于PAM4高速互连的眼图估计。该方法可以比PRBS眼模拟更快地构建眼图。此外,建立了遗传算法来寻找前馈均衡器(FFE)的最优抽头数和系数,从而有效地减小码间干扰(ISI)。
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引用次数: 1
A fully 3-D BIE evaluation of the resistance and inductance of on-board and on-chip interconnects 对板上和片上互连的电阻和电感进行了全三维BIE评估
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401653
Martijn Huynen, D. De Zutter, D. Ginste
In this contribution, the resistance and inductance of 3-D interconnects are obtained through a full-wave approach. By solving a free space boundary integral equation (BIE) combined with a fully 3-D differential surface admittance operator in a circuit framework, an effective procedure to study finite conductivity interconnects is presented. The accuracy of the proposed method in characterizing 3-D interconnects is demonstrated through an on-board and an on-chip example.
在这篇贡献中,通过全波方法获得了三维互连的电阻和电感。通过求解自由空间边界积分方程(BIE)并结合电路框架中的全三维微分表面导纳算子,给出了研究有限导电性互连的有效方法。通过一个板上和片上实例验证了该方法表征三维互连的准确性。
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引用次数: 3
Impact of the doped areas sizes in the performances of microwave SPST switches integrated in a silicon substrate 掺杂面积大小对集成在硅衬底中的微波SPST开关性能的影响
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401644
R. Allanic, D. Le Berre, Y. Quéré, C. Quendo, D. Chouteau, V. Grimal, D. Valente, J. Billoué
This paper deals with the impact of the doped areas sizes on the performances of microwave switches. The RF switches are designed on a silicon substrate in microstrip technology and use semiconductors diodes (N+P junctions) as active elements to commute from the OFF-state to the ON-state. Therefore, the co-design of the microstrip transmission lines and the active elements gives a great design flexibility. The manufacturing process is based on classical steps used to fabricate semiconductor components and this allows to choose the size of the active elements (i.e. the size of the doped areas). Five demonstrators with as many different integrated diode sizes are presented and the size impact on their performances is discussed on the frequency band going from 0.1 GHz to 10 GHz. With a very low bias voltage, the insertion losses are lower than 2 dB and the isolation can be higher than 40 dB.
本文研究了掺杂面积大小对微波开关性能的影响。RF开关采用微带技术设计在硅衬底上,并使用半导体二极管(N+P结)作为有源元件从off状态转换到on状态。因此,微带传输线与有源元件的协同设计为微带传输线的设计提供了很大的灵活性。制造过程基于用于制造半导体元件的经典步骤,这允许选择有源元件的尺寸(即掺杂区域的尺寸)。给出了五种不同集成二极管尺寸的样品,并讨论了尺寸对其在0.1 GHz到10 GHz频段内性能的影响。在极低的偏置电压下,插入损耗低于2 dB,隔离度可高于40 dB。
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引用次数: 6
Powering a remote board and sensors in an extreme environment — An optical solution 在极端环境下为远程板和传感器供电-一种光学解决方案
Pub Date : 2018-05-22 DOI: 10.1109/SAPIW.2018.8401646
C. Diouf, L. Ghisa, Ramez Hamié, V. Quintard, M. Guegan, A. Pérennou, Laurent Gautier, M. Tardivel, Stéphane Barbot, F. Colas
This short paper is an advanced proof-of-concept of an optically powered board designed for seabed monitoring operations. The application features a very particular case of interference between data signals and power supply. The paper mainly focuses on measurements based on a recent prototype that validate previous results mostly obtained by simulation.
这篇简短的论文是一种先进的概念验证,用于海底监测操作的光动力板。该应用程序具有数据信号和电源之间干扰的非常特殊的情况。本文主要介绍了基于最新原型的测量,验证了以前主要通过仿真得到的结果。
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2018 IEEE 22nd Workshop on Signal and Power Integrity (SPI)
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