Pub Date : 2026-03-01Epub Date: 2025-11-15DOI: 10.1016/j.scriptamat.2025.117101
Yuming Mao , Jingji Zhang , Mo Chen , Min Fang , Ning Yan , Zhihao Lou , Yun Zhou
The weakly polar relaxor Sr₀.₇Bi₀.₂TiO₃ is renowned for its exceptional energy efficiency but suffers from low maximum polarization. To overcome this trade-off, we introduce BiNi2/3Ta1/3O₃ to design a composite structure of coexisting ferroelectric A4B3O12 and paraelectric ABO₃ phases. With increasing dopant, the A4B3O12 phase is progressively replaced by paraelectric ABO₃ and pyrochlore Bi2Ti2O7, raising the phase-transition temperature. The optimal composition comprises 70.67% P4/mbm ABO₃, 28.49% Fmmm A4B3O12, 0.75% Fd3m Bi2Ti2O7, and 0.09% Pnna BiTaO4, forming polar clusters and a coherent boundary between the ABO₃ and A4B3O12 phases. This yields a high energy storage density of 5.12 J cm-3 an ultrahigh efficiency of 97.13% at a high breakdown strength of 460 kV cm-1, together with a figure of merit of 175.90 J cm-3 and environment-independent stability. These results establish the composite as a highly promising candidate for high-performance dielectric energy-storage devices.
{"title":"Boosting energy storage at moderate fields in Sr₀.₇Bi₀.₂TiO₃ weakly polar relaxor via BiNi2/3Ta1/3O₃-induced ferroelectric-paraelectric composite structure","authors":"Yuming Mao , Jingji Zhang , Mo Chen , Min Fang , Ning Yan , Zhihao Lou , Yun Zhou","doi":"10.1016/j.scriptamat.2025.117101","DOIUrl":"10.1016/j.scriptamat.2025.117101","url":null,"abstract":"<div><div>The weakly polar relaxor Sr₀.₇Bi₀.₂TiO₃ is renowned for its exceptional energy efficiency but suffers from low maximum polarization. To overcome this trade-off, we introduce BiNi<sub>2/3</sub>Ta<sub>1/3</sub>O₃ to design a composite structure of coexisting ferroelectric A<sub>4</sub>B<sub>3</sub>O<sub>12</sub> and paraelectric ABO₃ phases. With increasing dopant, the A<sub>4</sub>B<sub>3</sub>O<sub>12</sub> phase is progressively replaced by paraelectric ABO₃ and pyrochlore Bi<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>, raising the phase-transition temperature. The optimal composition comprises 70.67% <em>P</em>4/<em>mbm</em> ABO₃, 28.49% <em>Fmmm</em> A<sub>4</sub>B<sub>3</sub>O<sub>12</sub>, 0.75% <em>Fd</em>3<em>m</em> Bi<sub>2</sub>Ti<sub>2</sub>O<sub>7</sub>, and 0.09% <em>Pnna</em> BiTaO<sub>4</sub>, forming polar clusters and a coherent boundary between the ABO₃ and A<sub>4</sub>B<sub>3</sub>O<sub>12</sub> phases. This yields a high energy storage density of 5.12 J cm<sup>-3</sup> an ultrahigh efficiency of 97.13% at a high breakdown strength of 460 kV cm<sup>-1</sup><strong>,</strong> together with a figure of merit of 175.90 J cm<sup>-3</sup> and environment-independent stability. These results establish the composite as a highly promising candidate for high-performance dielectric energy-storage devices.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117101"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145527331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Semiconducting quasicrystals and their approximant crystals (ACs) have attracted significant attention because of their potential applications as thermoelectric materials. Herein, we report the synthesis of a semiconducting AC in the Al–Ge–Ru system and its thermoelectric properties. The Al–Ge–Ru AC exhibited a band gap of approximately 0.25 eV. Notably, we observed a negative Seebeck coefficient, which reached a maximum magnitude of 200 µV K−1, marking the first example of an n-type semiconducting AC. The Al74Ge4Ru22 AC exhibiting degenerate semiconductor behavior reached a dimensionless figure of merit of 0.28 at a peak temperature of 473 K. This represents the highest figure of merit achieved to date for a quasicrystalline-based thermoelectric material.
{"title":"Thermoelectric properties of semiconducting approximant crystals in the Al–Ge–Ru system","authors":"Yutaka Iwasaki , Yasuhiro Niwa , Koichi Kitahara , Kaoru Kimura , Ryuji Tamura","doi":"10.1016/j.scriptamat.2025.117100","DOIUrl":"10.1016/j.scriptamat.2025.117100","url":null,"abstract":"<div><div>Semiconducting quasicrystals and their approximant crystals (ACs) have attracted significant attention because of their potential applications as thermoelectric materials. Herein, we report the synthesis of a semiconducting AC in the Al–Ge–Ru system and its thermoelectric properties. The Al–Ge–Ru AC exhibited a band gap of approximately 0.25 eV. Notably, we observed a negative Seebeck coefficient, which reached a maximum magnitude of 200 µV K<sup>−1</sup>, marking the first example of an n-type semiconducting AC. The Al<sub>74</sub>Ge<sub>4</sub>Ru<sub>22</sub> AC exhibiting degenerate semiconductor behavior reached a dimensionless figure of merit of 0.28 at a peak temperature of 473 K. This represents the highest figure of merit achieved to date for a quasicrystalline-based thermoelectric material.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117100"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145577437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2025-11-19DOI: 10.1016/j.scriptamat.2025.117107
Kossi Loic M. Avegnon , Ronan Henry , Michael Sealy , Fabrice Barbe , Benoit Vieille
While additive manufacturing generally involves building components layer by layer, hybrid additive manufacturing in this context refers to a process that combines printing with interlayer cold working. Although cold working induces plastic deformation, the subsequent microstructural evolution in the newly printed layers is largely dictated by the thermal input of the printing process. Hence, the objective of this study was to characterize the microstructural evolution at the interface of interlayer ultrasonic impact peened 316 L stainless steel manufactured by laser powder bed fusion. Ultrasonic treatment was applied intensively over five consecutive layers, and the resulting interface was mapped through microstructural analysis and hardness testing across multiple length scales. The results revealed a succession from highly deformed grains in treated regions to recrystallized equiaxed structures, and finally remelted columnar features in the subsequent layers. This transition was driven by the rapid cooling rate and steep thermal gradient of the printing process.
{"title":"Microstructural transition across interlayer ultrasonic impact peened interfaces in hybrid additive manufacturing of 316L stainless steel","authors":"Kossi Loic M. Avegnon , Ronan Henry , Michael Sealy , Fabrice Barbe , Benoit Vieille","doi":"10.1016/j.scriptamat.2025.117107","DOIUrl":"10.1016/j.scriptamat.2025.117107","url":null,"abstract":"<div><div>While additive manufacturing generally involves building components layer by layer, hybrid additive manufacturing in this context refers to a process that combines printing with interlayer cold working. Although cold working induces plastic deformation, the subsequent microstructural evolution in the newly printed layers is largely dictated by the thermal input of the printing process. Hence, the objective of this study was to characterize the microstructural evolution at the interface of interlayer ultrasonic impact peened 316 L stainless steel manufactured by laser powder bed fusion. Ultrasonic treatment was applied intensively over five consecutive layers, and the resulting interface was mapped through microstructural analysis and hardness testing across multiple length scales. The results revealed a succession from highly deformed grains in treated regions to recrystallized equiaxed structures, and finally remelted columnar features in the subsequent layers. This transition was driven by the rapid cooling rate and steep thermal gradient of the printing process.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117107"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145577408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2025-11-24DOI: 10.1016/j.scriptamat.2025.117112
Xiaoliang Ji , Yiping Xia , Jian Lin , Longxiao Huang , Yishu Wang , Fu Guo
The low-temperature embrittlement of β-Sn poses a critical reliability challenge for Sn-based solders in cryogenic electronics. In this work, a comparative investigation was conducted by quasi-in-situ EBSD at 77 K and 293 K to elucidate the deformation mechanisms accounting for the ductile-to-brittle transition of β-Sn. It is found that the deformation mechanisms shift from dislocation-dominated to twinning-dominated as the temperature decreases. Dynamic recovery and continuous dynamic recrystallization were suppressed at 77 K, while discontinuous dynamic recrystallization occurred around the crack propagation path. The intergranular fracture at cryogenic temperature could be attributed to the failure of twin-twin transmission across grain boundaries. Molecular dynamics simulations further verified that the twin-twin transmission could accommodate the local strain, correlating its failure with the intergranular cracking. These findings offer new insights into the cryogenic brittleness of β-Sn, helping design Sn-based solders with enhanced cryogenic reliability.
{"title":"Temperature-dependent deformation mechanisms and transition of fracture behaviors in polycrystalline Sn","authors":"Xiaoliang Ji , Yiping Xia , Jian Lin , Longxiao Huang , Yishu Wang , Fu Guo","doi":"10.1016/j.scriptamat.2025.117112","DOIUrl":"10.1016/j.scriptamat.2025.117112","url":null,"abstract":"<div><div>The low-temperature embrittlement of β-Sn poses a critical reliability challenge for Sn-based solders in cryogenic electronics. In this work, a comparative investigation was conducted by quasi-in-situ EBSD at 77 K and 293 K to elucidate the deformation mechanisms accounting for the ductile-to-brittle transition of β-Sn. It is found that the deformation mechanisms shift from dislocation-dominated to twinning-dominated as the temperature decreases. Dynamic recovery and continuous dynamic recrystallization were suppressed at 77 K, while discontinuous dynamic recrystallization occurred around the crack propagation path. The intergranular fracture at cryogenic temperature could be attributed to the failure of twin-twin transmission across grain boundaries. Molecular dynamics simulations further verified that the twin-twin transmission could accommodate the local strain, correlating its failure with the intergranular cracking. These findings offer new insights into the cryogenic brittleness of β-Sn, helping design Sn-based solders with enhanced cryogenic reliability.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117112"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145621340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2025-11-22DOI: 10.1016/j.scriptamat.2025.117111
Haruki Nishida , Yuhei Ogawa , Akinobu Shibata
Plastic flow behavior and strain rate sensitivity, S, of Fe-15Cr-15Ni (mass%) austenitic steel, alloyed with either hydrogen or carbon, were evaluated by tensile and stress relaxation tests at ambient temperature. The effects of these two interstitial elements on solid solution-hardening and thermally activated dislocation motion were compared in terms of Haasen plot—S versus flow stress. Both hydrogen and carbon exhibited solid solution-hardening of the same order of magnitude, increasing S proportionally with their concentrations. However, their ability to increase S was distinct. Hydrogen caused a much steeper increase in S, acting as extremely localized obstacles resisting dislocation motion. In contrast, despite exhibiting comparable solid solution-hardening, carbon led to an order of magnitude smaller increase in S than hydrogen. This result demonstrates a relatively long-range and less rate-sensitive nature of carbon, which is totally different from hydrogen in its obstacle character.
{"title":"Distinct impacts of hydrogen and carbon on thermally activated dislocation motion in Fe-Cr-Ni austenitic steel","authors":"Haruki Nishida , Yuhei Ogawa , Akinobu Shibata","doi":"10.1016/j.scriptamat.2025.117111","DOIUrl":"10.1016/j.scriptamat.2025.117111","url":null,"abstract":"<div><div>Plastic flow behavior and strain rate sensitivity, <em>S</em>, of Fe-15Cr-15Ni (mass%) austenitic steel, alloyed with either hydrogen or carbon, were evaluated by tensile and stress relaxation tests at ambient temperature. The effects of these two interstitial elements on solid solution-hardening and thermally activated dislocation motion were compared in terms of <em>Haasen plot</em>—<em>S</em> versus flow stress. Both hydrogen and carbon exhibited solid solution-hardening of the same order of magnitude, increasing <em>S</em> proportionally with their concentrations. However, their ability to increase <em>S</em> was distinct. Hydrogen caused a much steeper increase in <em>S</em>, acting as extremely localized obstacles resisting dislocation motion. In contrast, despite exhibiting comparable solid solution-hardening, carbon led to an order of magnitude smaller increase in <em>S</em> than hydrogen. This result demonstrates a relatively long-range and less rate-sensitive nature of carbon, which is totally different from hydrogen in its obstacle character.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117111"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145621339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2025-11-21DOI: 10.1016/j.scriptamat.2025.117091
{"title":"RECIPIENTS OF THE 2024 ACTA MATERIALIA, INC. STUDENT AWARDS","authors":"","doi":"10.1016/j.scriptamat.2025.117091","DOIUrl":"10.1016/j.scriptamat.2025.117091","url":null,"abstract":"","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117091"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145690475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2025-11-13DOI: 10.1016/j.scriptamat.2025.117099
Yujie Song , Huichao Duan , Tao Zheng , Qianning Dai , Kui Du
Grain rotation plays a critical role in grain growth of nanocrystalline materials, yet the underlying atomic-scale mechanisms, especially for large-angle rotation, remain poorly understood. Here, we report a 62.4° lattice rotation in Cu3Pd nanocrystals by in-situ atomic resolution transmission electron microscopy (TEM) images. This rotation proceeds via a sequential two-step mechanism: double-shear-driven structural transition followed by atomic shuffling. The large-angle rotation suggests a potential coalescence between adjacent grains and provides an atomic-scale explanation for abnormal grain growth in intermetallic nanocrystals. These experiments establish a novel shear-shuffle paradigm for grain rotation, offering a new framework for understanding the structural evolution and nanocrystal coalescence.
{"title":"Direct atomic observation of large-angle lattice rotation in Cu3Pd","authors":"Yujie Song , Huichao Duan , Tao Zheng , Qianning Dai , Kui Du","doi":"10.1016/j.scriptamat.2025.117099","DOIUrl":"10.1016/j.scriptamat.2025.117099","url":null,"abstract":"<div><div>Grain rotation plays a critical role in grain growth of nanocrystalline materials, yet the underlying atomic-scale mechanisms, especially for large-angle rotation, remain poorly understood. Here, we report a 62.4° lattice rotation in Cu<sub>3</sub>Pd nanocrystals by <em>in-situ</em> atomic resolution transmission electron microscopy (TEM) images. This rotation proceeds via a sequential two-step mechanism: double-shear-driven structural transition followed by atomic shuffling. The large-angle rotation suggests a potential coalescence between adjacent grains and provides an atomic-scale explanation for abnormal grain growth in intermetallic nanocrystals. These experiments establish a novel shear-shuffle paradigm for grain rotation, offering a new framework for understanding the structural evolution and nanocrystal coalescence.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117099"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145527333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2025-11-25DOI: 10.1016/j.scriptamat.2025.117114
Ya Li , Robert Kahlenberg , Philipp Retzl , Ernst Kozeschnik
The interplay between thermal and athermal nucleation of MgSi co-clusters during quenching of solution-heat-treated Al-Mg-Si alloys is investigated through computer simulations. Thermal nucleation is typically described by classical nucleation theory, which refers to the formation of supercritical nuclei via the diffusion-controlled attachment of solute atoms to clusters of critical size. In the process of athermal nucleation, pre-existing subcritical nuclei become supercritical due to a decrease in critical size, for instance, as a result of increased undercooling during quenching. In this study, we develop a comprehensive nucleation model that integrates thermal and athermal contributions, offering new insights into the MgSi co-cluster formation in Al-Mg-Si alloys during continuous cooling. The results reveal that athermal nucleation is the predominant nucleation mechanism for MgSi co-clusters during quenching. Furthermore, the dependencies of thermal and athermal nucleation on cooling rate, temperature, and alloy composition are elucidated.
{"title":"Thermal and athermal nucleation of MgSi co-clusters in Al-Mg-Si alloys","authors":"Ya Li , Robert Kahlenberg , Philipp Retzl , Ernst Kozeschnik","doi":"10.1016/j.scriptamat.2025.117114","DOIUrl":"10.1016/j.scriptamat.2025.117114","url":null,"abstract":"<div><div>The interplay between thermal and athermal nucleation of MgSi co-clusters during quenching of solution-heat-treated Al-Mg-Si alloys is investigated through computer simulations. Thermal nucleation is typically described by classical nucleation theory, which refers to the formation of supercritical nuclei via the diffusion-controlled attachment of solute atoms to clusters of critical size. In the process of athermal nucleation, pre-existing subcritical nuclei become supercritical due to a decrease in critical size, for instance, as a result of increased undercooling during quenching. In this study, we develop a comprehensive nucleation model that integrates thermal and athermal contributions, offering new insights into the MgSi co-cluster formation in Al-Mg-Si alloys during continuous cooling. The results reveal that athermal nucleation is the predominant nucleation mechanism for MgSi co-clusters during quenching. Furthermore, the dependencies of thermal and athermal nucleation on cooling rate, temperature, and alloy composition are elucidated.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117114"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145621008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-03-01Epub Date: 2025-11-21DOI: 10.1016/j.scriptamat.2025.117106
Haotian Zhu , Shuai Liu , Di Peng , Fujun Lan , Yuxin Liu , Guangrun Zhong , Hongbo Lou , Qiaoshi Zeng , Zhidan Zeng
Amorphous silicon (a-Si) plays a significant role in various modern technologies. Therefore, understanding its stability is of both fundamental and technological importance. While pressure-induced phase transitions in a-Si have been extensively studied, the effect of domain size remains unclear. In this study, we synthesized amorphous silicon nanoparticles (a-SiNPs) with an average size of ∼9 nm and investigated their pressure-induced phase transitions using in situ high-pressure Raman spectroscopy and synchrotron X-ray diffraction. These results reveal that a-SiNPs transform into β-Sn phase at ∼10.8 GPa, rather than a previously reported high-density amorphous phase. Upon decompression, the β-Sn phase reverts to a-Si. The phase transition pathway and transition pressure are similar to those observed in bulk a-Si, indicating that domain size is not a determining factor for inducing polyamorphism in a-Si. These findings bring new insights into the thermodynamics and kinetics of phase transitions in a-SiNPs and provide experimental constraints for theoretical studies of a-Si.
{"title":"Pressure-induced phase transitions of amorphous silicon nanoparticles","authors":"Haotian Zhu , Shuai Liu , Di Peng , Fujun Lan , Yuxin Liu , Guangrun Zhong , Hongbo Lou , Qiaoshi Zeng , Zhidan Zeng","doi":"10.1016/j.scriptamat.2025.117106","DOIUrl":"10.1016/j.scriptamat.2025.117106","url":null,"abstract":"<div><div>Amorphous silicon (a-Si) plays a significant role in various modern technologies. Therefore, understanding its stability is of both fundamental and technological importance. While pressure-induced phase transitions in a-Si have been extensively studied, the effect of domain size remains unclear. In this study, we synthesized amorphous silicon nanoparticles (a-SiNPs) with an average size of ∼9 nm and investigated their pressure-induced phase transitions using <em>in situ</em> high-pressure Raman spectroscopy and synchrotron X-ray diffraction. These results reveal that a-SiNPs transform into β-Sn phase at ∼10.8 GPa, rather than a previously reported high-density amorphous phase. Upon decompression, the β-Sn phase reverts to a-Si. The phase transition pathway and transition pressure are similar to those observed in bulk a-Si, indicating that domain size is not a determining factor for inducing polyamorphism in a-Si. These findings bring new insights into the thermodynamics and kinetics of phase transitions in a-SiNPs and provide experimental constraints for theoretical studies of a-Si.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"273 ","pages":"Article 117106"},"PeriodicalIF":5.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145577410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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