Pub Date : 1900-01-01DOI: 10.23919/SNW.2017.8242330
M. Kuo, B. J. Liu, T. L. Huang, H. Lin, Pei-Wen Li
We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400–1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103–108A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for Pin = 6nW−1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.
{"title":"Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonics","authors":"M. Kuo, B. J. Liu, T. L. Huang, H. Lin, Pei-Wen Li","doi":"10.23919/SNW.2017.8242330","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242330","url":null,"abstract":"We experimentally demonstrated that the inclusion of Ge dots into the gate stack of a Si MOSFET provides extremely high photoresponsivity over 1,000A/W and superior photoresponse linearity of at least 7 decades for 400–1300nm illumination, depending on whether the Ge-dot photoMOSFET operates in the inversion or accumulation modes. Remarkably a very large photocurrent gain of 103–108A/A and a significantly large dynamic range of photoresponse linearity with at least 6 decades for Pin = 6nW−1.376mW are concurrently achievable for our Ge-dot photoMOSFETs in the accumulation-mode operation thanks to extremely low dark current of 40pA. Photocarrier generation and recombination under high power illumination is analytically simulated.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132529933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1137/1.9781611975321.fm
Kim Gerdes, Christopher D. Manning
This conference was conceived in 1991 when a small group of individuals envisioned how virtual reality, then in its first era of widespread enthusiasm, might transform medicine by immersing physicians, students, and patients in data more completely. They predicted that interactive learning tools might better engage medical students by assessing real-time performance and customizing lessons in sync. Simulation could enhance the "see one, do one, teach one" model with the repetition that athletes and musicians used to perfect their skills. After training on simulators, novice caregivers could tend to their first patients with expertise they'd gained from making many previous errors that did no harm. In addition, they imagined that visualizing patient data in 3D and 4D would give physicians the power to diagnose more accurately and strategize more precise therapies. Tissues, organs, and systems would be color coded, highlighted, and viewed in motion from multiple angles, revealing previously hidden features and relationships. Computers would join the clinical team. Psychotherapy presented yet another promising application for VR. Within controlled virtual environments, patients might revisit traumatic experiences or confront phobias. Images would arouse emotions more intensely than words, possibly resulting in more complete healing. And, from pain management to Parkinson's, VR also gave researchers hope as a new tool to aid physical rehabilitation. Although the VR boom of the early '90s faded when technical obstacles repeatedly delayed progress, researchers who understood the technology's potential kept working. Medical applications improved slowly and steadily; obstacles were overcome with much creativity and little fanfare. This volume, like its predecessors, is the product of these researchers' lasting commitment to better patient care and medical education. In the past couple years, we've witnessed a remarkable VR renaissance, which must feel gratifying to those pioneers who stayed the course while VR was out of fashion. Heavily funded by the entertainment industry, sleek and relatively inexpensive gear is entering the market and being utilized in healthcare. To replace the clunky headsets of the first VR boom - often better in theory than in practice - are devices that patients, clinicians, and students can use gracefully and intuitively. It took a generation, but we are now seeing more and more applications that fulfill that initial vision of medicine transformed by the ability to immerse oneself in data. This conference has endured with the support and encouragement of its Organizing Committee. To it and to the researchers who have shared their passion and hard work at this conference: thank you for all you've contributed in the last 25 years. James D. Westwood Aligned Management Associates, Inc.
这个会议是在1991年构思的，当时一小群人设想虚拟现实如何通过让医生、学生和患者更全面地沉浸在数据中，从而改变医学，当时还处于广泛热情的第一个时代。他们预测，交互式学习工具可能会通过评估实时表现和同步定制课程来更好地吸引医学生。模拟可以通过运动员和音乐家用来完善技能的重复来增强“看一个，做一个，教一个”的模式。在模拟器上训练后，新手护理人员可以用他们从以前犯过的许多没有伤害的错误中获得的专业知识来照顾他们的第一个病人。此外，他们还设想，将患者数据以3D和4D的形式可视化，将使医生能够更准确地诊断并制定更精确的治疗策略。组织、器官和系统将被彩色编码、高亮显示，并从多个角度进行动态观察，揭示出以前隐藏的特征和关系。计算机将加入临床团队。心理治疗是VR的另一个有前景的应用。在受控的虚拟环境中，患者可能会重温创伤经历或面对恐惧症。图像会比语言更强烈地唤起情感，可能会导致更彻底的治愈。而且，从疼痛管理到帕金森氏症，VR作为一种帮助身体康复的新工具也给了研究人员希望。尽管90年代初的VR热潮因技术障碍一再拖延而消退，但了解这项技术潜力的研究人员仍在继续努力。医疗应用缓慢稳步发展;他们以极大的创造力和很少的宣传克服了障碍。这卷，像它的前辈，是这些研究人员的产品持久的承诺，以更好的病人护理和医学教育。在过去的几年里，我们见证了一场非凡的VR复兴，这一定会让那些在VR过时时坚持到底的先驱者感到欣慰。在娱乐行业的大力资助下，时尚且相对便宜的设备正在进入市场并被用于医疗保健。为了取代第一次VR热潮中笨重的头戴式设备(理论上比实践上更好)，患者、临床医生和学生可以优雅而直观地使用这些设备。这花了一代人的时间，但我们现在看到越来越多的应用程序实现了最初对医学的愿景，这种愿景被沉浸在数据中的能力所改变。这次会议在组委会的支持和鼓励下得以举行。对它，以及在本次会议上分享他们的热情和辛勤工作的研究人员:感谢你们在过去25年里所做的一切贡献。James D. Westwood align Management Associates, Inc。
{"title":"Front matter","authors":"Kim Gerdes, Christopher D. Manning","doi":"10.1137/1.9781611975321.fm","DOIUrl":"https://doi.org/10.1137/1.9781611975321.fm","url":null,"abstract":"This conference was conceived in 1991 when a small group of individuals envisioned how virtual reality, then in its first era of widespread enthusiasm, might transform medicine by immersing physicians, students, and patients in data more completely. They predicted that interactive learning tools might better engage medical students by assessing real-time performance and customizing lessons in sync. Simulation could enhance the \"see one, do one, teach one\" model with the repetition that athletes and musicians used to perfect their skills. After training on simulators, novice caregivers could tend to their first patients with expertise they'd gained from making many previous errors that did no harm. In addition, they imagined that visualizing patient data in 3D and 4D would give physicians the power to diagnose more accurately and strategize more precise therapies. Tissues, organs, and systems would be color coded, highlighted, and viewed in motion from multiple angles, revealing previously hidden features and relationships. Computers would join the clinical team. Psychotherapy presented yet another promising application for VR. Within controlled virtual environments, patients might revisit traumatic experiences or confront phobias. Images would arouse emotions more intensely than words, possibly resulting in more complete healing. And, from pain management to Parkinson's, VR also gave researchers hope as a new tool to aid physical rehabilitation. Although the VR boom of the early '90s faded when technical obstacles repeatedly delayed progress, researchers who understood the technology's potential kept working. Medical applications improved slowly and steadily; obstacles were overcome with much creativity and little fanfare. This volume, like its predecessors, is the product of these researchers' lasting commitment to better patient care and medical education. In the past couple years, we've witnessed a remarkable VR renaissance, which must feel gratifying to those pioneers who stayed the course while VR was out of fashion. Heavily funded by the entertainment industry, sleek and relatively inexpensive gear is entering the market and being utilized in healthcare. To replace the clunky headsets of the first VR boom - often better in theory than in practice - are devices that patients, clinicians, and students can use gracefully and intuitively. It took a generation, but we are now seeing more and more applications that fulfill that initial vision of medicine transformed by the ability to immerse oneself in data. This conference has endured with the support and encouragement of its Organizing Committee. To it and to the researchers who have shared their passion and hard work at this conference: thank you for all you've contributed in the last 25 years. James D. Westwood Aligned Management Associates, Inc.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132598448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/SNW.2017.8242289
Chen-Chen Yang, K. Peng, Yung-Chen Chen, Horng-Chih Lin, Pei-Wen Li
In this work we study the random telegraph noise (RTN) characteristics of short-channel gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistors. The test devices were fabricated with I-line-based lithography in combination with novel spacer-etching techniques for aggressively shrinking the channel dimension. Based on the tiny nanowire channel and short-channel length, we are able to detect clear RTN signals as the gate voltage is sufficiently large. Location of the trap responsible for the RTN is estimated to be 1.13 nm within the gate oxide away from the oxide/channel interface.
{"title":"Study on random telegraph noise of gate-ail-around poly-Si junctionless nanowire transistors","authors":"Chen-Chen Yang, K. Peng, Yung-Chen Chen, Horng-Chih Lin, Pei-Wen Li","doi":"10.23919/SNW.2017.8242289","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242289","url":null,"abstract":"In this work we study the random telegraph noise (RTN) characteristics of short-channel gate-all-around (GAA) poly-Si junctionless (JL) nanowire (NW) transistors. The test devices were fabricated with I-line-based lithography in combination with novel spacer-etching techniques for aggressively shrinking the channel dimension. Based on the tiny nanowire channel and short-channel length, we are able to detect clear RTN signals as the gate voltage is sufficiently large. Location of the trap responsible for the RTN is estimated to be 1.13 nm within the gate oxide away from the oxide/channel interface.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132776002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/SNW.2017.8242268
E. Hsieh, J. Lee, M. H. Lee, S. Chung
A thorough understanding on how to design and to manufacture a face-tunneling TFET (f-TFET) has been provided. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, f-TFET can be enhanced in its current. This work shows I0„ of f-TFET with one-order magnitude I„n enhancement than that of point-TFET(control), and the longer the gate length is, the higher the becomes. However, from experimental results, S.S. of f-TFET is a little worse than that of control and shows strong dependency on temperature because of dominance of trap-assisted tunneling. To understand how traps affect Ion of f-TFET, the charge-pumping measurement is utilized to examine trap distributions in the tunneling region. The results show that the channel/source interfacial traps degrade the performance of f-TFET, however, with careful treatment of the epi-process of f-TFET, this device with face-tunneling shows great potential for future IoT applications.
{"title":"The guideline on designing face-tunneling FET for large-scale-device applications in IoT","authors":"E. Hsieh, J. Lee, M. H. Lee, S. Chung","doi":"10.23919/SNW.2017.8242268","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242268","url":null,"abstract":"A thorough understanding on how to design and to manufacture a face-tunneling TFET (f-TFET) has been provided. By taking advantage of an area-tunneling, in comparison to conventional point-tunneling FET, f-TFET can be enhanced in its current. This work shows I0„ of f-TFET with one-order magnitude I„n enhancement than that of point-TFET(control), and the longer the gate length is, the higher the becomes. However, from experimental results, S.S. of f-TFET is a little worse than that of control and shows strong dependency on temperature because of dominance of trap-assisted tunneling. To understand how traps affect Ion of f-TFET, the charge-pumping measurement is utilized to examine trap distributions in the tunneling region. The results show that the channel/source interfacial traps degrade the performance of f-TFET, however, with careful treatment of the epi-process of f-TFET, this device with face-tunneling shows great potential for future IoT applications.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128753750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/SNW.2017.8242320
C. Hsueh, T. L. Huang, K. Peng, M. Kuo, H. Lin, Pei-Wen Li
We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.
{"title":"Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devices","authors":"C. Hsueh, T. L. Huang, K. Peng, M. Kuo, H. Lin, Pei-Wen Li","doi":"10.23919/SNW.2017.8242320","DOIUrl":"https://doi.org/10.23919/SNW.2017.8242320","url":null,"abstract":"We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127421136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.23919/snw.2017.8242275
Kvungmin Jang, Nozomu Ueyama, M. Kobayashi, T. Hiramoto
We have investigated dynamic characteristics of ferroelectric Hf02 (FE-Hf02) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO2 can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-Hfö2 revealed that dynamic term (ρi) of Landau-Khalatnikov equation in MD FE-HfO2 is not constant but depends on Vin due to domain dynamics.
{"title":"Investigations on dynamic characteristics of ferroelectric Hf02 based on multi-domain interaction model","authors":"Kvungmin Jang, Nozomu Ueyama, M. Kobayashi, T. Hiramoto","doi":"10.23919/snw.2017.8242275","DOIUrl":"https://doi.org/10.23919/snw.2017.8242275","url":null,"abstract":"We have investigated dynamic characteristics of ferroelectric Hf0<inf>2</inf> (FE-Hf0<inf>2</inf>) by considering multiple domain (MD) and linear domain-domain interaction. By using the calibrated MD model, experimental dynamic responses of FE-HfO<inf>2</inf> can precisely reproduced, for the first time. Input voltage amplitude (Vin) and external resistance (R) dependences of dynamic responses in FE-Hfö<inf>2</inf> revealed that dynamic term (ρ<inf>i</inf>) of Landau-Khalatnikov equation in MD FE-HfO<inf>2</inf> is not constant but depends on V<inf>in</inf> due to domain dynamics.","PeriodicalId":424135,"journal":{"name":"2017 Silicon Nanoelectronics Workshop (SNW)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125614302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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