Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496334
Tao Liu, Q. Wang, J. Swanson
Optoelectronic modulation spectroscopy has been applied to polycrystalline silicon thin film field effect transistors (poly-Si TFTs). Spectra include response from defect levels at the poly-Si grain boundary. According to the energy band structure of silicon, we can get three discrete defect levels of poly-Si grain boundary corresponding to the null positions of TFTS OEMS responses which have in phase to out of phase response if we assume the transition of electrons from defect levels to the /spl Gamma//sub 15/ CBM. The defect levels of poly-Si grain boundary illustrated in the energy band structure of silicon are 0.48, 0.24, and 0.08 ev below the /spl Delta//sub 1/ CBM, respectively.
{"title":"Optoelectronic modulation spectroscopy applied to the characterization of polycrystalline silicon thin film field effect transistors","authors":"Tao Liu, Q. Wang, J. Swanson","doi":"10.1109/TENCON.1995.496334","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496334","url":null,"abstract":"Optoelectronic modulation spectroscopy has been applied to polycrystalline silicon thin film field effect transistors (poly-Si TFTs). Spectra include response from defect levels at the poly-Si grain boundary. According to the energy band structure of silicon, we can get three discrete defect levels of poly-Si grain boundary corresponding to the null positions of TFTS OEMS responses which have in phase to out of phase response if we assume the transition of electrons from defect levels to the /spl Gamma//sub 15/ CBM. The defect levels of poly-Si grain boundary illustrated in the energy band structure of silicon are 0.48, 0.24, and 0.08 ev below the /spl Delta//sub 1/ CBM, respectively.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122495608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496366
E. Tan, C. Y. Chia, K.K. Wong
Digital circuits realized from Reed-Muller (RM) algebraic descriptions are generally less complex than those realized from conventional Boolean methods. This suggests that the technique will be better suited for VLSI or ASIC (application specific integrated circuit) implementations because of the reduction in chip size and increased optimization options. In particular, digital circuits realized from RM universal logic modules (RM-ULMs) have a very simple structure and will incur less propagation delay. The paper presents design examples to illustrate the advantages of RM-based circuits and analyzes the results obtained.
{"title":"Reed-Muller versus traditional Boolean circuit implementation","authors":"E. Tan, C. Y. Chia, K.K. Wong","doi":"10.1109/TENCON.1995.496366","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496366","url":null,"abstract":"Digital circuits realized from Reed-Muller (RM) algebraic descriptions are generally less complex than those realized from conventional Boolean methods. This suggests that the technique will be better suited for VLSI or ASIC (application specific integrated circuit) implementations because of the reduction in chip size and increased optimization options. In particular, digital circuits realized from RM universal logic modules (RM-ULMs) have a very simple structure and will incur less propagation delay. The paper presents design examples to illustrate the advantages of RM-based circuits and analyzes the results obtained.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129382141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496319
E. Wong
The great economic successes of Japan, especially in the decades of the seventies and eighties, pose a challenge to the traditional model of how investment in scientific research enables a nation to gain an industrial advantage. For an economic power with a great technology base, Japan has made relatively little investment in basic research. Instead, it has gained its competitive advantage by focusing on advanced development and manufacturing. Is this the model for the economies of East Asia? Are the United States and the countries of Europe wasting their resources by their large investments in basic research, the fruits of which must be shared with world anyway? Should the nations with emerging economies invest in basic research? For Hong Kong these issues are particularly timely, In twenty years the manufacturing sector in Hong Kong has declined from 30% to 10% of GDP. Re-industrialization of Hong Kong would require a far more advanced technology base than that which exists now. Can that be achieved without changing the traditional free-market and laissez-faire policies of Hong Kong?.
{"title":"Technology policy and the re-industrialization of Hong Kong","authors":"E. Wong","doi":"10.1109/TENCON.1995.496319","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496319","url":null,"abstract":"The great economic successes of Japan, especially in the decades of the seventies and eighties, pose a challenge to the traditional model of how investment in scientific research enables a nation to gain an industrial advantage. For an economic power with a great technology base, Japan has made relatively little investment in basic research. Instead, it has gained its competitive advantage by focusing on advanced development and manufacturing. Is this the model for the economies of East Asia? Are the United States and the countries of Europe wasting their resources by their large investments in basic research, the fruits of which must be shared with world anyway? Should the nations with emerging economies invest in basic research? For Hong Kong these issues are particularly timely, In twenty years the manufacturing sector in Hong Kong has declined from 30% to 10% of GDP. Re-industrialization of Hong Kong would require a far more advanced technology base than that which exists now. Can that be achieved without changing the traditional free-market and laissez-faire policies of Hong Kong?.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126081256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496354
Y. Xu, G. Rigby, M. Starr
The effect of switch charge injection on a second-order /spl Sigma//spl Delta/ modulator has been investigated. It has been found that the switch charge injection can cause an error at the output of the SC integrator and that this integrator error can significantly degrade the dynamic range of the oversampling /spl Sigma//spl Delta/ modulator. The integrator error depends on the switch and the integrating capacitor sizes and the common-mode rejection performance of the op-amp. The differential signal at the input of the modulator can also affect the switch charge injection.
{"title":"Effect of switch charge injection on /spl Sigma//spl Delta/ modulator","authors":"Y. Xu, G. Rigby, M. Starr","doi":"10.1109/TENCON.1995.496354","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496354","url":null,"abstract":"The effect of switch charge injection on a second-order /spl Sigma//spl Delta/ modulator has been investigated. It has been found that the switch charge injection can cause an error at the output of the SC integrator and that this integrator error can significantly degrade the dynamic range of the oversampling /spl Sigma//spl Delta/ modulator. The integrator error depends on the switch and the integrating capacitor sizes and the common-mode rejection performance of the op-amp. The differential signal at the input of the modulator can also affect the switch charge injection.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125417764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496405
N. Homma, E. Goto
A new clocking system is proposed in which the clock is transmitted as almost complete standing wave along a guarded transmission line. The line and the guard are driven with signals of almost the same shape. Simulation shows that the skew is reduced to 1/50 in bipolar and 1/20 in CMOS circuits.
{"title":"A high-speed clock distributing system using guarded transmission lines","authors":"N. Homma, E. Goto","doi":"10.1109/TENCON.1995.496405","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496405","url":null,"abstract":"A new clocking system is proposed in which the clock is transmitted as almost complete standing wave along a guarded transmission line. The line and the guard are driven with signals of almost the same shape. Simulation shows that the skew is reduced to 1/50 in bipolar and 1/20 in CMOS circuits.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124205193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496369
Zhenan Tang, Darwin T. W Wong, C.H. Chan, J. Sin, S. Fung, P. Cheung
The automated gas sensor characterization system is designed for precision characterization of integrated or discrete gas sensors. Gas metering and data acquisition are computer controlled. Calibration of the gas concentration is carried out through the use of a gas analyzer or gas chromatography (GC). The system has been used to characterize two types of commercial gas sensors. The transient response of the gas sensors is therefore measured when the system first reaches equilibrium and then heating current is applied to heat up the sensor from the chamber ambient temperature to the sensor operating temperature. Details of experimental results for static and dynamic characterization of various commercial gas sensors are presented.
{"title":"An automated precision gas sensor characterization system","authors":"Zhenan Tang, Darwin T. W Wong, C.H. Chan, J. Sin, S. Fung, P. Cheung","doi":"10.1109/TENCON.1995.496369","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496369","url":null,"abstract":"The automated gas sensor characterization system is designed for precision characterization of integrated or discrete gas sensors. Gas metering and data acquisition are computer controlled. Calibration of the gas concentration is carried out through the use of a gas analyzer or gas chromatography (GC). The system has been used to characterize two types of commercial gas sensors. The transient response of the gas sensors is therefore measured when the system first reaches equilibrium and then heating current is applied to heat up the sensor from the chamber ambient temperature to the sensor operating temperature. Details of experimental results for static and dynamic characterization of various commercial gas sensors are presented.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126377701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496365
P.-Y. Hsiao, Ruey-Tzer Liaw, J. Su
A effective graph manipulation on the ROBDD, called EXT, is proposed to factor the PLA-based functions. The detection for the factors of the Boolean function are derived from the bottom level up to the top level for their ROBDDs. A fast execution and competitive results have been compared to SIS-1.2.
{"title":"PLA-based Boolean factorization using ROBDD","authors":"P.-Y. Hsiao, Ruey-Tzer Liaw, J. Su","doi":"10.1109/TENCON.1995.496365","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496365","url":null,"abstract":"A effective graph manipulation on the ROBDD, called EXT, is proposed to factor the PLA-based functions. The detection for the factors of the Boolean function are derived from the bottom level up to the top level for their ROBDDs. A fast execution and competitive results have been compared to SIS-1.2.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"107 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122384045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496375
K. Min, K. Lee
Semi-empirical universal hole and electron mobility models with temperature dependence have been proposed for circuit simulation as well as for process characterization. These models are based on the universal dependence of low field mobility on the effective transverse field and cover a wide range of oxide thickness as well as of temperature. The accuracy of our models is justified by comparison with experimental work reported in the literature and obtained in our laboratory. The models are accurate and physical enough to be suited for simulation of modern VLSI CMOS circuits with gate oxide thickness less than 400 /spl Aring/ in the temperature range of 250-400 K.
{"title":"Temperature dependent universal hole and electron mobility models for CMOS circuit simulation","authors":"K. Min, K. Lee","doi":"10.1109/TENCON.1995.496375","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496375","url":null,"abstract":"Semi-empirical universal hole and electron mobility models with temperature dependence have been proposed for circuit simulation as well as for process characterization. These models are based on the universal dependence of low field mobility on the effective transverse field and cover a wide range of oxide thickness as well as of temperature. The accuracy of our models is justified by comparison with experimental work reported in the literature and obtained in our laboratory. The models are accurate and physical enough to be suited for simulation of modern VLSI CMOS circuits with gate oxide thickness less than 400 /spl Aring/ in the temperature range of 250-400 K.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116795021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496341
Y. Cheng, A.S.W. Lee, E. Li
An alternative multi-bandgap solar cell made of diffused quantum well (DFQW) as the absorber is proposed here. The modeling of the spectral response and energy conversion efficiency of the solar cell will be shown. Significant enhancement in energy conversion efficiency is demonstrated when compared to that of the single bandgap cells.
{"title":"Diffused quantum well solar cells","authors":"Y. Cheng, A.S.W. Lee, E. Li","doi":"10.1109/TENCON.1995.496341","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496341","url":null,"abstract":"An alternative multi-bandgap solar cell made of diffused quantum well (DFQW) as the absorber is proposed here. The modeling of the spectral response and energy conversion efficiency of the solar cell will be shown. Significant enhancement in energy conversion efficiency is demonstrated when compared to that of the single bandgap cells.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115301553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496416
Dong Yiqun, Z. Wuming, Li Jiliang, Chen Yuquan
The finite element method (FEM) employed to model the temperature field in a heated silicon plane was discussed, since optimum designing of the micro-silicon structure would be the basis of a micro-machined silicon-based thermal biosensor. In this research, the heat flow originally generated by the enzymatic reaction was conducted in the anisotropically etched silicon and collected by a thermopile array. Fourier's law and Laplace's equation were utilized to build the temperature field equations under appropriate boundary conditions in two-dimensions Cartesian coordinates, while FEM was used to calculate the temperature field and model conduction. Meanwhile, several available results for optimum design are reported.
{"title":"Mathematical model and heat conduction analysis of a silicon-based thermoelectric enzyme sensor","authors":"Dong Yiqun, Z. Wuming, Li Jiliang, Chen Yuquan","doi":"10.1109/TENCON.1995.496416","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496416","url":null,"abstract":"The finite element method (FEM) employed to model the temperature field in a heated silicon plane was discussed, since optimum designing of the micro-silicon structure would be the basis of a micro-machined silicon-based thermal biosensor. In this research, the heat flow originally generated by the enzymatic reaction was conducted in the anisotropically etched silicon and collected by a thermopile array. Fourier's law and Laplace's equation were utilized to build the temperature field equations under appropriate boundary conditions in two-dimensions Cartesian coordinates, while FEM was used to calculate the temperature field and model conduction. Meanwhile, several available results for optimum design are reported.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126587659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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