Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496357
Shi-Cai Qin, Xiangluan Jia, Yong-Ping Wang
A new CMOS OTA which consists of a linearized source-coupled pair cascaded by a conventional CMOS OTA biased in sub-threshold region is presented. SPICE simulation results show that for /spl plusmn/5 V supply voltage, and over /spl plusmn/3 V input range, the maximum non-linear error is /spl plusmn/0.3% and the transconductance varies I/sub abc/ linearly over a wide I/sub abc/ range.
{"title":"CMOS OTA with improve performance","authors":"Shi-Cai Qin, Xiangluan Jia, Yong-Ping Wang","doi":"10.1109/TENCON.1995.496357","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496357","url":null,"abstract":"A new CMOS OTA which consists of a linearized source-coupled pair cascaded by a conventional CMOS OTA biased in sub-threshold region is presented. SPICE simulation results show that for /spl plusmn/5 V supply voltage, and over /spl plusmn/3 V input range, the maximum non-linear error is /spl plusmn/0.3% and the transconductance varies I/sub abc/ linearly over a wide I/sub abc/ range.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133979340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496328
J. Jungho Pak, S. Yi, Y. Sung, G. Neudeck
This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting in a local silicon-on-insulator (SOI) structure, resulting in high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30 g.
{"title":"Fabrication and its response characteristics of MELO accelerometer","authors":"J. Jungho Pak, S. Yi, Y. Sung, G. Neudeck","doi":"10.1109/TENCON.1995.496328","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496328","url":null,"abstract":"This paper reports on the fabrication and experimental results of a novel piezoresistive bridge-type accelerometer utilizing merged epitaxial lateral overgrowth (MELO) of silicon. The suspension beams of a bridge type accelerometer were realized by selective epitaxial lateral overgrowth of silicon resulting in a local silicon-on-insulator (SOI) structure, resulting in high quality low-doped single crystal epitaxial silicon. Its sensitivity was 0.287 mV/V-g, resonant frequency was 2.026 kHz, and the linearity was excellent up to 30 g.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"138 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133193923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496419
S. Yi, J.H. Park, Y. K. Sung
In this analysis, the B-H curve was attained and assumed by Z and R type curves. The B/sub max/, H/sub c/, the driving frequency and the demagnetizing factors are considered as parameters to solve a numerical solution. As the driving frequency increased from 4 kHz to 12 kHz-step 4 kHz-the output voltages increased from 147 mV to 446 mV in Z-type. The detection error due to the rotation angles are limited to +3 degrees. In the R type curve, the output voltages are in the range of 145 mV to 354 mV. As the coercive force H/sub c/, is increased, the output voltage increased slightly. Considering the demagnetizing factor, the output voltages are reduced, but the detection error is decreased greatly.
{"title":"Theoretical analysis on the automotive electronic compass sensor","authors":"S. Yi, J.H. Park, Y. K. Sung","doi":"10.1109/TENCON.1995.496419","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496419","url":null,"abstract":"In this analysis, the B-H curve was attained and assumed by Z and R type curves. The B/sub max/, H/sub c/, the driving frequency and the demagnetizing factors are considered as parameters to solve a numerical solution. As the driving frequency increased from 4 kHz to 12 kHz-step 4 kHz-the output voltages increased from 147 mV to 446 mV in Z-type. The detection error due to the rotation angles are limited to +3 degrees. In the R type curve, the output voltages are in the range of 145 mV to 354 mV. As the coercive force H/sub c/, is increased, the output voltage increased slightly. Considering the demagnetizing factor, the output voltages are reduced, but the detection error is decreased greatly.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130040535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496422
W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng
In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.
{"title":"The voltage (current) controlled frequency modulation effect in DUBAT device","authors":"W.L. Guo, Z.Y. Hou, A.L. Zheng, Y. Zheng","doi":"10.1109/TENCON.1995.496422","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496422","url":null,"abstract":"In this paper, the principle and realization of the voltage (current) controlled frequency modulation effect on one of the three terminal voltage controlled negative resistance devices-Dual Base transistor (DUBAT)-have been described for the first time.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128830932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496361
S. Nakamura, A. Yamada, I. Shirakawa
This paper proposes a new heuristic approach to the time-constrained datapath scheduling with complex conditional structures. This algorithm intends to select the best of all solutions attained by the iterative refinement process. Experimental results demonstrate that this algorithm attains optimal results in most cases and can be applied to a practical scale of datapath scheduling.
{"title":"A heuristic approach to datapath scheduling of complex conditional structure","authors":"S. Nakamura, A. Yamada, I. Shirakawa","doi":"10.1109/TENCON.1995.496361","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496361","url":null,"abstract":"This paper proposes a new heuristic approach to the time-constrained datapath scheduling with complex conditional structures. This algorithm intends to select the best of all solutions attained by the iterative refinement process. Experimental results demonstrate that this algorithm attains optimal results in most cases and can be applied to a practical scale of datapath scheduling.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129770628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496353
X. Zeng, C. Tse, P. Tang
This paper begins with an analysis of the charge injection error in the second-generation current memory cell. By combining the circuit-replication technique and the n-step principle, a new scheme for simultaneously cancelling both signal-dependent and signal-independent charge injection errors in second-generation switched-current circuits is proposed. SPICE simulations are used to verify the feasibility and effectiveness of the proposed cell for tackling the charge injection problem. Major merits of the proposed cell include capability to meet high precision requirements and applicability to any second-generation switched-current circuit configuration.
{"title":"A new scheme for complete cancellation of charge injection distortion in second generation switched-current circuits","authors":"X. Zeng, C. Tse, P. Tang","doi":"10.1109/TENCON.1995.496353","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496353","url":null,"abstract":"This paper begins with an analysis of the charge injection error in the second-generation current memory cell. By combining the circuit-replication technique and the n-step principle, a new scheme for simultaneously cancelling both signal-dependent and signal-independent charge injection errors in second-generation switched-current circuits is proposed. SPICE simulations are used to verify the feasibility and effectiveness of the proposed cell for tackling the charge injection problem. Major merits of the proposed cell include capability to meet high precision requirements and applicability to any second-generation switched-current circuit configuration.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129794497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496364
P. Shew, Jong-Shen Shei, Pei-Yuug Hsiao
We present a new routing model to further extend the routing capacity over the cells. We call this constrained terminals over-the-cell channel routing problem (CTOTC-CRP). Based on this new model, our heuristic algorithm achieved a routing area reduction of 71% for the MCNC benchmark PRIMARY I example using three-layer over-the-cell routing.
{"title":"A constrained terminals over-the-cell router","authors":"P. Shew, Jong-Shen Shei, Pei-Yuug Hsiao","doi":"10.1109/TENCON.1995.496364","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496364","url":null,"abstract":"We present a new routing model to further extend the routing capacity over the cells. We call this constrained terminals over-the-cell channel routing problem (CTOTC-CRP). Based on this new model, our heuristic algorithm achieved a routing area reduction of 71% for the MCNC benchmark PRIMARY I example using three-layer over-the-cell routing.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124196514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496427
G. Niu, G. Ruan
This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO/sub 2/-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range.
{"title":"Simulation of Ge implanted SiGe-channel p-MOSFETs","authors":"G. Niu, G. Ruan","doi":"10.1109/TENCON.1995.496427","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496427","url":null,"abstract":"This paper describes the process feasibility analysis and numerical simulation of Ge implanted SiGe-channel p-MOSFETs. The average separation between conducting holes and SiO/sub 2/-Si interface peaks at certain effective implantation range, implies an optimum mask thickness. Threshold voltage is shown to increase with increasing Ge dose and decreasing effective projected range.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123021951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496394
S. Kal, I. Kasko, H. Ryssel
Ultra-thin CoSi/sub 2/ films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi/sub 2/ on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (x/sub j/<100 nm) were characterized by fabricating diodes.
{"title":"Ultra-shallow junction formation using cobalt silicide as diffusion source","authors":"S. Kal, I. Kasko, H. Ryssel","doi":"10.1109/TENCON.1995.496394","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496394","url":null,"abstract":"Ultra-thin CoSi/sub 2/ films were prepared from 10 nm sputtered deposited Co on Si using RTA. The distribution of As ions implanted into thin layers of CoSi/sub 2/ on monocrystalline Si and out-diffusion into Si substrate during furnace annealing and RTP were investigated. Ultra-shallow junctions (x/sub j/<100 nm) were characterized by fabricating diodes.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117339301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496342
A.T.H. Li, K. Lo, E. Li
The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.
{"title":"Impurity induced disordering produced lateral optical confinement in AlGaAs and InGaAs (on GaAs) quantum well waveguides","authors":"A.T.H. Li, K. Lo, E. Li","doi":"10.1109/TENCON.1995.496342","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496342","url":null,"abstract":"The impurity induced disordering technique is employed on an AlGaAs/GaAs quantum well optical waveguide to provide lateral optical confinement. The modal propagation constant and field profile are analysed using an improved Fourier decomposition method. The single mode operating region is given in terms of thickness of quantum well layers.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1021 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121712971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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