Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496403
Y. Pang, C. Choy
The paper describes an asynchronous matrix multiplier. A simple and efficient micropipeline structure is applied. With a voltage-controlled delay and basic handshaking control protocol, the multiplier is guaranteed to be hazard free. Also, its performance can be adjusted after fabrication.
{"title":"An asynchronous matrix multiplier","authors":"Y. Pang, C. Choy","doi":"10.1109/TENCON.1995.496403","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496403","url":null,"abstract":"The paper describes an asynchronous matrix multiplier. A simple and efficient micropipeline structure is applied. With a voltage-controlled delay and basic handshaking control protocol, the multiplier is guaranteed to be hazard free. Also, its performance can be adjusted after fabrication.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116944868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496382
J. Park, Y.T. Kim, D. Kim, S. Hong, C.G. Yu
A new analytical model based on a pseudo two dimensional model is presented for the hot electron induced channel length shortening (/spl Delta/L/sub H/) of PMOSFET. It has been founded that /spl Delta/L/sub H/ is a logarithmic function of both the stress time and the degradation of punchthrough voltage, and is also a linear function of the degradation of the drain current. /spl Delta/L/sub H/ can be predicted from the measurement of the gate current (/spl Delta/L/sub H//spl prop/I/sub g//sup n/) and can thus be used for the current calculation of a degraded PMOSFET.
{"title":"Hot electron induced channel length shortening model and its impact on HEIP in PMOS","authors":"J. Park, Y.T. Kim, D. Kim, S. Hong, C.G. Yu","doi":"10.1109/TENCON.1995.496382","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496382","url":null,"abstract":"A new analytical model based on a pseudo two dimensional model is presented for the hot electron induced channel length shortening (/spl Delta/L/sub H/) of PMOSFET. It has been founded that /spl Delta/L/sub H/ is a logarithmic function of both the stress time and the degradation of punchthrough voltage, and is also a linear function of the degradation of the drain current. /spl Delta/L/sub H/ can be predicted from the measurement of the gate current (/spl Delta/L/sub H//spl prop/I/sub g//sup n/) and can thus be used for the current calculation of a degraded PMOSFET.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127418574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496411
M. G. He, A. Harvey
When investigating the mismatch error pattern to template matching for object tracking, it was found that a similar correlation region or "Vortex Effect Region" exists around an object regardless of the search direction. Finding an object in a grey scale image then requires location of a VER and converging to a minimum within it. Multi-directional diagonal search with origin in the centre of an image using VER minimizes the average search distance to the object giving a significant reduction in search time.
{"title":"Multi-directional diagonal search methodology for object tracking","authors":"M. G. He, A. Harvey","doi":"10.1109/TENCON.1995.496411","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496411","url":null,"abstract":"When investigating the mismatch error pattern to template matching for object tracking, it was found that a similar correlation region or \"Vortex Effect Region\" exists around an object regardless of the search direction. Finding an object in a grey scale image then requires location of a VER and converging to a minimum within it. Multi-directional diagonal search with origin in the centre of an image using VER minimizes the average search distance to the object giving a significant reduction in search time.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132032362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496370
Jinshu Zhang, T. Lo
A gated wedge-shaped field emitter has been fabricated by anisotropic etching and gold plating. The structure displays high emitter aspect ratio, sharp emitter tip and small gate-to-tip distance which are crucial in lowering the threshold voltage and increasing the emission efficiency of the device. The process is fairly simple with high processing latitude, and is, therefore, suitable for applications such as flat panel displays and ultra-high frequency devices.
{"title":"Fabrication of gated wedge-shaped field emitter array by plasma etching and gold plating","authors":"Jinshu Zhang, T. Lo","doi":"10.1109/TENCON.1995.496370","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496370","url":null,"abstract":"A gated wedge-shaped field emitter has been fabricated by anisotropic etching and gold plating. The structure displays high emitter aspect ratio, sharp emitter tip and small gate-to-tip distance which are crucial in lowering the threshold voltage and increasing the emission efficiency of the device. The process is fairly simple with high processing latitude, and is, therefore, suitable for applications such as flat panel displays and ultra-high frequency devices.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"abs/2306.05567 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125416336","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496421
M. Kimura
A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated.
{"title":"A new type MOS-gated tunnel transistor with a Schottky barrier","authors":"M. Kimura","doi":"10.1109/TENCON.1995.496421","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496421","url":null,"abstract":"A new type tunnel transistor, in which electrons can tunnel through the Schottky barrier between the Schottky metal and the accumulation layer formed at the interface by a MOS gate just on the Schottky junction to control the tunneling current, is proposed and demonstrated.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126402159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496378
T.K.P. Wong, P.C.H. Chan
In the equivalent circuit model approach, the model is a non-linear distributed circuit where the circuit elements are related to familiar semiconductor device parameters. The well-established circuit simulation techniques can therefore be applied to analyze the equivalent circuit. In this paper, we expand the model to the silicon photovoltaic cell by adding the photo-excitation. We illustrate this by an example in which monochromatic light is applied to one side of a p+/n junction cell. The output characteristics of the solar cell are then compared with the results from the Medici simulator. The design optimization of the solar cell and the effects on accuracy by reducing the number of sections in the model are also described.
{"title":"An equivalent circuit approach to solar cell modeling","authors":"T.K.P. Wong, P.C.H. Chan","doi":"10.1109/TENCON.1995.496378","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496378","url":null,"abstract":"In the equivalent circuit model approach, the model is a non-linear distributed circuit where the circuit elements are related to familiar semiconductor device parameters. The well-established circuit simulation techniques can therefore be applied to analyze the equivalent circuit. In this paper, we expand the model to the silicon photovoltaic cell by adding the photo-excitation. We illustrate this by an example in which monochromatic light is applied to one side of a p+/n junction cell. The output characteristics of the solar cell are then compared with the results from the Medici simulator. The design optimization of the solar cell and the effects on accuracy by reducing the number of sections in the model are also described.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122300964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496390
S. Leang
The floating-gate technique has been used extensively for studying hot-carrier effects in MOSFETs. However, this technique can cause the device to degrade if the measurement time is too long. A new method is proposed, which allows the I/sub g/-V/sub g/ curves of the MOSFETs to be determined in a shorter time, thereby reducing the risk of degrading the test device during the measurement process.
{"title":"A new gate current measurement technique for the characterization of hot-carrier-induced degradation in MOSFETs","authors":"S. Leang","doi":"10.1109/TENCON.1995.496390","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496390","url":null,"abstract":"The floating-gate technique has been used extensively for studying hot-carrier effects in MOSFETs. However, this technique can cause the device to degrade if the measurement time is too long. A new method is proposed, which allows the I/sub g/-V/sub g/ curves of the MOSFETs to be determined in a shorter time, thereby reducing the risk of degrading the test device during the measurement process.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132233852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496327
E. Yang, S.S. Yang, S. Han, S.Y. Kim
This paper presents the fabrication and testing of electrostatic actuators. The p/sup +/ diaphragm is used as a moving electrode, whereas the aluminum layer deposited on a #7740 pyrex glass is used as a fixed electrode. The dynamic characteristics of the actuator with the corrugated diaphragm and that with the flat one are tested and compared with the calculation results, respectively.
{"title":"Fabrication and dynamic testing of electrostatic actuators with p/sup +/ silicon diaphragms","authors":"E. Yang, S.S. Yang, S. Han, S.Y. Kim","doi":"10.1109/TENCON.1995.496327","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496327","url":null,"abstract":"This paper presents the fabrication and testing of electrostatic actuators. The p/sup +/ diaphragm is used as a moving electrode, whereas the aluminum layer deposited on a #7740 pyrex glass is used as a fixed electrode. The dynamic characteristics of the actuator with the corrugated diaphragm and that with the flat one are tested and compared with the calculation results, respectively.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117180871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496417
M. Kawamura, S. Hieda, K. Ishii, S. Sato
An optical remote sensing method for the decomposing reaction of SF/sub 6/ gas caused by an arc discharge is proposed by using an OTDR (Optical Time Domain Reflectometer) system. The corner cube prism is used as a sensor head and its three total reflection planes are coated with a thin film of methyl orange by a vacuum evaporation method. The methyl orange dye is a color reaction reagent for the decomposed gas of SF/sub 6/ such as an HF gas. The arc discharge is carried out in a glass container filled with the SF/sub 6/ gas, and the sensor head connected with the OTDR through the optical fiber is placed in it. The optical sensing system using the OTDR can be applied to monitor and detect some troubles and failures occurring in several gas insulated equipments and their location can be determined.
{"title":"Sensing of decomposed gas in SF/sub 6/ by using an optical fiber and a corner cube prism deposited with a dye film","authors":"M. Kawamura, S. Hieda, K. Ishii, S. Sato","doi":"10.1109/TENCON.1995.496417","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496417","url":null,"abstract":"An optical remote sensing method for the decomposing reaction of SF/sub 6/ gas caused by an arc discharge is proposed by using an OTDR (Optical Time Domain Reflectometer) system. The corner cube prism is used as a sensor head and its three total reflection planes are coated with a thin film of methyl orange by a vacuum evaporation method. The methyl orange dye is a color reaction reagent for the decomposed gas of SF/sub 6/ such as an HF gas. The arc discharge is carried out in a glass container filled with the SF/sub 6/ gas, and the sensor head connected with the OTDR through the optical fiber is placed in it. The optical sensing system using the OTDR can be applied to monitor and detect some troubles and failures occurring in several gas insulated equipments and their location can be determined.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123377698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496377
T. Y. Wong, M. Poon, J. Sin, Melvin H. L. Wong, T. Lo, H. Wong
This paper presents a fast initial guess method in the numerical solving of semiconductor equations. The method has been applied to many examples and fast and accurate solutions have been obtained.
{"title":"Fast numerical method for semiconductor device simulation","authors":"T. Y. Wong, M. Poon, J. Sin, Melvin H. L. Wong, T. Lo, H. Wong","doi":"10.1109/TENCON.1995.496377","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496377","url":null,"abstract":"This paper presents a fast initial guess method in the numerical solving of semiconductor equations. The method has been applied to many examples and fast and accurate solutions have been obtained.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122943602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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