Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496398
M. G. He, A. Harvey
For mask registration, we require matching between masks to be fast and reliable. By using coarse/fine search, the process can be speeded up but reach a point where the search speed is maximised while the process is still reliable. A two-stage probability based fast focus search strategy is proposed for mask matching in binary or grey scale images to further increase the search step while maintaining reliability of the process.
{"title":"Two-stage fast focus method for mask registration","authors":"M. G. He, A. Harvey","doi":"10.1109/TENCON.1995.496398","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496398","url":null,"abstract":"For mask registration, we require matching between masks to be fast and reliable. By using coarse/fine search, the process can be speeded up but reach a point where the search speed is maximised while the process is still reliable. A two-stage probability based fast focus search strategy is proposed for mask matching in binary or grey scale images to further increase the search step while maintaining reliability of the process.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124902664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496381
B. Siu
By the year 2000, computers capable of >1000 MIPs and operating at >500 MHz are on the horizon. As the microprocessor becomes more powerful, major technical and economic challenges in packaging technologies are evident. In this paper, we trace the emergence of the microprocessor by examining the technical and economical drivers. It is seen that specialized material processes and designs are required to package a high-performance microprocessor. Low-cost materials with low dielectric constant and high electrical and thermal conductivity metallization are required to meet these objectives. As microprocessor architectures migrate towards closely-coupled CPU/cache requiring more than one VLSI, the multichip module is emerging/re-emerging as a requirement.
{"title":"High-performance microprocessor packaging in the year 2000: technical and economic barriers and alternatives","authors":"B. Siu","doi":"10.1109/TENCON.1995.496381","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496381","url":null,"abstract":"By the year 2000, computers capable of >1000 MIPs and operating at >500 MHz are on the horizon. As the microprocessor becomes more powerful, major technical and economic challenges in packaging technologies are evident. In this paper, we trace the emergence of the microprocessor by examining the technical and economical drivers. It is seen that specialized material processes and designs are required to package a high-performance microprocessor. Low-cost materials with low dielectric constant and high electrical and thermal conductivity metallization are required to meet these objectives. As microprocessor architectures migrate towards closely-coupled CPU/cache requiring more than one VLSI, the multichip module is emerging/re-emerging as a requirement.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124107862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496420
Wen-Chin Tsay, Yen-Ann Chen, Jyh-Wong Hong, A. Chen, W. Lin, Y.H. Chang, S. Hou, S. Hsu, C.R. Li, Hsien-Jen Ting, Song-Tsang Chiang
Several 8/spl times/4 cm/sup 2/ single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p/sup +/ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible.
{"title":"Studies on reducing leakage current of large-area silicon PIN microstrip sensors-methods to prevent implantation damage","authors":"Wen-Chin Tsay, Yen-Ann Chen, Jyh-Wong Hong, A. Chen, W. Lin, Y.H. Chang, S. Hou, S. Hsu, C.R. Li, Hsien-Jen Ting, Song-Tsang Chiang","doi":"10.1109/TENCON.1995.496420","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496420","url":null,"abstract":"Several 8/spl times/4 cm/sup 2/ single-sided silicon microstrip sensors with capacitor coupling and polysilicon bias resistors have been fabricated by using planar technology. Sirtl etch analysis revealed that the leakage current was caused by implantation damage. A boron solid source predeposition process has been developed to replace the p/sup +/ strip implantation. Several anneal technologies have been studied to remove the implantation damge. The prototype sensors have been tested at the CERN SPS area. Test results showed that such a sensor is feasible.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121619281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496335
Sun Zhen, K. Tong, H. Cho, Y. Wong, L. Tsang, P. W. Chan
We have shown that r.f. sputtered Si films crystallized by cw Ar/sup +/ laser irradiation is a suitable material for fabrication of polysilicon TFTs. Polycrystalline Si film with proper annealing condition has a high Hall mobility up to 120 cm/sup 2//V-s in p-type samples. The dependence of dark conductivity on temperature suggests that much reduced trap density in laser-annealed Si films is the reason for the high mobility, despite the fact that the grain size is only 30 nm.
{"title":"Ar laser annealing of sputtered Si films for TFT applications","authors":"Sun Zhen, K. Tong, H. Cho, Y. Wong, L. Tsang, P. W. Chan","doi":"10.1109/TENCON.1995.496335","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496335","url":null,"abstract":"We have shown that r.f. sputtered Si films crystallized by cw Ar/sup +/ laser irradiation is a suitable material for fabrication of polysilicon TFTs. Polycrystalline Si film with proper annealing condition has a high Hall mobility up to 120 cm/sup 2//V-s in p-type samples. The dependence of dark conductivity on temperature suggests that much reduced trap density in laser-annealed Si films is the reason for the high mobility, despite the fact that the grain size is only 30 nm.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125244647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496406
Jian Liu, Zhiming Chen, Y. Zhong
Switched-capacitor DC-to-DC converters can be improved by voltage-tracking-control (VTC) regulation to get high performance. The new type of converter overcomes the drawbacks, such as small ratio of conversion, high sensitivity to parameters of the circuit elements, difficult to control output ripple, etc., which usually exist in conventional switched-capacitor converters. The new approach presented here can also realize DC-to-AC conversion without any substantial change in the circuit.
{"title":"An improved circuit for high performance dc-dc/ac converters","authors":"Jian Liu, Zhiming Chen, Y. Zhong","doi":"10.1109/TENCON.1995.496406","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496406","url":null,"abstract":"Switched-capacitor DC-to-DC converters can be improved by voltage-tracking-control (VTC) regulation to get high performance. The new type of converter overcomes the drawbacks, such as small ratio of conversion, high sensitivity to parameters of the circuit elements, difficult to control output ripple, etc., which usually exist in conventional switched-capacitor converters. The new approach presented here can also realize DC-to-AC conversion without any substantial change in the circuit.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122295752","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496386
V. Huang, C. Nguyen, A. Chan, C. C. Ling, S.S. Wong
Within-wafer non-uniformity due to chemo-mechanical polishing (CMP) is classified in this paper as belonging to two classes: radially symmetric (radial), and not radially symmetric (non-radial). While radial non-uniformity has been well-treated both theoretically and empirically in the literature, the equally important problem of non-radial non-uniformity has received little attention. We identify the significance of the latter here through a series of CMP experiments, and propose a straightforward intermediate solution.
{"title":"Non-radial non-uniformity in chemo-mechanical polishing","authors":"V. Huang, C. Nguyen, A. Chan, C. C. Ling, S.S. Wong","doi":"10.1109/TENCON.1995.496386","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496386","url":null,"abstract":"Within-wafer non-uniformity due to chemo-mechanical polishing (CMP) is classified in this paper as belonging to two classes: radially symmetric (radial), and not radially symmetric (non-radial). While radial non-uniformity has been well-treated both theoretically and empirically in the literature, the equally important problem of non-radial non-uniformity has received little attention. We identify the significance of the latter here through a series of CMP experiments, and propose a straightforward intermediate solution.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130209876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496412
Jiann-Fuh Chen, Wei-Ming Wang
The planning and operation of a distribution system depends heavily on the load flow solutions obtained. In this paper, the uniqueness of feasible voltage solution and its stability limit of radial distribution networks is analyzed. The DistFlow method is employed to find the load flow solutions for radial power networks. By this method, an equivalent 2-bus network can be obtained during the solving process. It is proposed that only one feasible voltage solution exists for a radial power network. Moreover, the feasibility can be judged directly from the sign of the Jacobian determinant of the equivalent 2-bus network obtained. A 22-bus practical system was tested to justify the approach.
{"title":"Uniqueness of the feasible voltage solutions for radial power networks","authors":"Jiann-Fuh Chen, Wei-Ming Wang","doi":"10.1109/TENCON.1995.496412","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496412","url":null,"abstract":"The planning and operation of a distribution system depends heavily on the load flow solutions obtained. In this paper, the uniqueness of feasible voltage solution and its stability limit of radial distribution networks is analyzed. The DistFlow method is employed to find the load flow solutions for radial power networks. By this method, an equivalent 2-bus network can be obtained during the solving process. It is proposed that only one feasible voltage solution exists for a radial power network. Moreover, the feasibility can be judged directly from the sign of the Jacobian determinant of the equivalent 2-bus network obtained. A 22-bus practical system was tested to justify the approach.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132000186","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496321
C. Tam
{"title":"PROLIFERATION OF FABRICATION PLANTS IN THE ASIA-PACIFIC REGION","authors":"C. Tam","doi":"10.1109/TENCON.1995.496321","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496321","url":null,"abstract":"","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129763050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496330
M. Chan, S. Fung, C. Hu, P. Ko
A novel SOI CBiCMOS compatible structure has been developed which can be operated as both an MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effects such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes.
{"title":"A novel SOI CBiCMOS compatible device structure for analog and mixed-mode circuits","authors":"M. Chan, S. Fung, C. Hu, P. Ko","doi":"10.1109/TENCON.1995.496330","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496330","url":null,"abstract":"A novel SOI CBiCMOS compatible structure has been developed which can be operated as both an MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effects such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116324924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1995-11-06DOI: 10.1109/TENCON.1995.496436
G. Griffiths, J. Archer
Demand is growing rapidly, worldwide, for wideband telecommunications services, stimulated in part by the availability of new microwave technologies. Millimetre-wave transceivers based on GaAs monolithic microwave integrated circuits (MMICs) are a key component of these wideband systems. The CSIRO Division of Radiophysics offers an MMIC design and prototyping service which provides a low-risk entry point for those wishing to develop integrated millimetre-wave components. This paper demonstrates CSIRO's highly competitive capability for innovation in GaAs MMIC technology.
{"title":"Australian MMIC prototyping in the 40, 60 and 90 GHz bands","authors":"G. Griffiths, J. Archer","doi":"10.1109/TENCON.1995.496436","DOIUrl":"https://doi.org/10.1109/TENCON.1995.496436","url":null,"abstract":"Demand is growing rapidly, worldwide, for wideband telecommunications services, stimulated in part by the availability of new microwave technologies. Millimetre-wave transceivers based on GaAs monolithic microwave integrated circuits (MMICs) are a key component of these wideband systems. The CSIRO Division of Radiophysics offers an MMIC design and prototyping service which provides a low-risk entry point for those wishing to develop integrated millimetre-wave components. This paper demonstrates CSIRO's highly competitive capability for innovation in GaAs MMIC technology.","PeriodicalId":425138,"journal":{"name":"1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128457076","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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