Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626419
V. Talbo, P. Dollfus, J. Saint-Martin
By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor working in sequential regime are investigated using our homemade simulator that self-consistently couples the 3D Poisson, Schrödinger and Master equations. At high voltage bias, the multi-level effects are shown to induce non-linear characteristics of the heat current. Additionally, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.
{"title":"Thermoelectric properties of Quantum Dot-based devices","authors":"V. Talbo, P. Dollfus, J. Saint-Martin","doi":"10.1109/NANO.2018.8626419","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626419","url":null,"abstract":"By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor working in sequential regime are investigated using our homemade simulator that self-consistently couples the 3D Poisson, Schrödinger and Master equations. At high voltage bias, the multi-level effects are shown to induce non-linear characteristics of the heat current. Additionally, the single-electron transistor operating in generator regime is shown to exhibit very good efficiency at maximum power.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122967059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626300
Irini Furxhi, Finbarr Murphy, Barry Sheehan, Martin Mullins, P. Mantecca
The potential toxicity of Nanomaterials (NMs) is widely documented but risk assessment continues to pose a challenge. In this study, data derived from toxicogenomic studies are used to build a Bayesian Network (BN) model. This approach integrates transcriptomics data to successfully predict a number of biological effects. The model uses experimental conditions such as dose, duration and cell type along with NM physicochemical properties, and is developed to predict the effects of NM exposure on in vitro biological systems. The model version proposed in this study is shown to successfully predict a number of biological processes with a success rate >80% for most outcomes. The model validation shows a robust and promising methodology for incorporating transcriptomics studies in a hazard and, extendedly, risk assessment modelling framework.
{"title":"Predicting Nanomaterials toxicity pathways based on genome-wide transcriptomics studies using Bayesian networks","authors":"Irini Furxhi, Finbarr Murphy, Barry Sheehan, Martin Mullins, P. Mantecca","doi":"10.1109/NANO.2018.8626300","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626300","url":null,"abstract":"The potential toxicity of Nanomaterials (NMs) is widely documented but risk assessment continues to pose a challenge. In this study, data derived from toxicogenomic studies are used to build a Bayesian Network (BN) model. This approach integrates transcriptomics data to successfully predict a number of biological effects. The model uses experimental conditions such as dose, duration and cell type along with NM physicochemical properties, and is developed to predict the effects of NM exposure on in vitro biological systems. The model version proposed in this study is shown to successfully predict a number of biological processes with a success rate >80% for most outcomes. The model validation shows a robust and promising methodology for incorporating transcriptomics studies in a hazard and, extendedly, risk assessment modelling framework.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121164485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626338
Aiham Adawi, H. Jiang, B. Kaminska
Plasmonics structures have gained great attention by research since these structures could be engineered to manipulate light into a unique fashion. They allow the coupling of the incident radiation with the surface electrons on the metal surface of the structure. This coupling has been utilized in a variety of applications including structural coloring, imaging, sensing, and security. In this research, a study of a potential alignment technique based on a plasmonic structure is proposed and designed by incorporating nano-optical technology for possible uses in vertical integration of device layers in 3D ICs technology to boost the performance while maintaining small form factor. The structures are positioned onto the layers that need to be integrated. TE (Transverse Electric) and TM (Transverse Magnetic) modes are used to achieve the accurate integration and alignment: light blocking mode only and light blocking with plasmonics mode. In the light blocking mode, incident light is s-polarized and is used to guide the horizontal alignment where light intensity changes are very sensitive to the small nano physical shifts. In the other mode, with consideration of surface plasmon excitation, incident light is p-polarized and is used to guide the complete alignment where light transmission peaks are observed. To validate these modes, numerical studies are carried using simulations and presented here.
{"title":"Design and Numerical Studies of Optical Alignment Rulers for Layer-by-Layer Integration","authors":"Aiham Adawi, H. Jiang, B. Kaminska","doi":"10.1109/NANO.2018.8626338","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626338","url":null,"abstract":"Plasmonics structures have gained great attention by research since these structures could be engineered to manipulate light into a unique fashion. They allow the coupling of the incident radiation with the surface electrons on the metal surface of the structure. This coupling has been utilized in a variety of applications including structural coloring, imaging, sensing, and security. In this research, a study of a potential alignment technique based on a plasmonic structure is proposed and designed by incorporating nano-optical technology for possible uses in vertical integration of device layers in 3D ICs technology to boost the performance while maintaining small form factor. The structures are positioned onto the layers that need to be integrated. TE (Transverse Electric) and TM (Transverse Magnetic) modes are used to achieve the accurate integration and alignment: light blocking mode only and light blocking with plasmonics mode. In the light blocking mode, incident light is s-polarized and is used to guide the horizontal alignment where light intensity changes are very sensitive to the small nano physical shifts. In the other mode, with consideration of surface plasmon excitation, incident light is p-polarized and is used to guide the complete alignment where light transmission peaks are observed. To validate these modes, numerical studies are carried using simulations and presented here.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114319843","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626421
Y. Sharma, A. Dhawan
We present two novel hybrid surface enhanced Raman scattering (SERS) based substrates - the hybrid ‘nanoline (NL)-nanoparticle (NP)' plasmonic substrates and the ‘nanofingers inside nanowires' plasmonic substrates. These substrates, which have been fabricated by employing a combination of top-down and bottom-up nanofabrication processes, allow easily achievable sub-5 nm gaps and a possibility of large area fabrication. Theoretical studies were conducted, using Finite Difference Time Domain (FDTD) modelling, to understand the effect of the various geometrical parameters of these substrates on the magnitude of the SERS enhancement and the plasmon resonance tunability. We also discuss the fabrication, characterization and measurement of SERS signals from these substrates.
{"title":"Hybrid SERS substrates for chemical and biological. sensing","authors":"Y. Sharma, A. Dhawan","doi":"10.1109/NANO.2018.8626421","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626421","url":null,"abstract":"We present two novel hybrid surface enhanced Raman scattering (SERS) based substrates - the hybrid ‘nanoline (NL)-nanoparticle (NP)' plasmonic substrates and the ‘nanofingers inside nanowires' plasmonic substrates. These substrates, which have been fabricated by employing a combination of top-down and bottom-up nanofabrication processes, allow easily achievable sub-5 nm gaps and a possibility of large area fabrication. Theoretical studies were conducted, using Finite Difference Time Domain (FDTD) modelling, to understand the effect of the various geometrical parameters of these substrates on the magnitude of the SERS enhancement and the plasmon resonance tunability. We also discuss the fabrication, characterization and measurement of SERS signals from these substrates.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114397928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626267
J. D. Gordon, D. Zerulla
Cell Lysis is the imperative first step towards obtaining the intracellular contents, which hold valuable genetic and pathogenic information. The process must be carried out with extreme care to avoid damaging or altering the cell contents or indeed test conditions. As the resulting clinical information is so important, it is an intensively researched topic. Here we examine the resulting photothermal effects when a human cell in aqueous solution is brought in contact with the nobel metal film of a Kretschmann-configuration Surface Plasmon Resonance setup. This specifically targets cells of refractive index in a known desired range, activating only when the target species comes in contact with the metal film and only while possessing the correct refractive index. Depending on the desired application, this can then denature the thin cell membrane, while also generating isotropically scattered transmission light from the radiatively-decaying plasmon, which is useful for signalling. Furthermore, with simple laser intensity, selective cellular necrosis may be induced. We apply the technique specifically towards the Plasmodium falciparum-infected red blood cells.
{"title":"Surface Plasmon Resonance Induced Photothermal Lysis of the Cell","authors":"J. D. Gordon, D. Zerulla","doi":"10.1109/NANO.2018.8626267","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626267","url":null,"abstract":"Cell Lysis is the imperative first step towards obtaining the intracellular contents, which hold valuable genetic and pathogenic information. The process must be carried out with extreme care to avoid damaging or altering the cell contents or indeed test conditions. As the resulting clinical information is so important, it is an intensively researched topic. Here we examine the resulting photothermal effects when a human cell in aqueous solution is brought in contact with the nobel metal film of a Kretschmann-configuration Surface Plasmon Resonance setup. This specifically targets cells of refractive index in a known desired range, activating only when the target species comes in contact with the metal film and only while possessing the correct refractive index. Depending on the desired application, this can then denature the thin cell membrane, while also generating isotropically scattered transmission light from the radiatively-decaying plasmon, which is useful for signalling. Furthermore, with simple laser intensity, selective cellular necrosis may be induced. We apply the technique specifically towards the Plasmodium falciparum-infected red blood cells.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114488297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626250
R. Arkani, C. Broderick, E. O’Reilly
We present a theoretical investigation of the optical properties of metamorphic $mathbf{InN}_{pmb{y}}(mathbf{As}_{1-pmb{x}}mathbf{Sb}_{x})_{1-pmb{y}}/mathbf{Al}_{z}mathbf{In}_{1-pmb{z}}$ As type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of $mathbf{Al}_{z}mathbf{In}_{1-z}$ As metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched In. $mathbf{As}_{1-pmb{x}}mathbf{Sb}_{pmb{x}}$ QWs having emission wavelengths $underset{sim}{>}$ 3 $mu mathbf{m}$ on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and $4.2 mu mathbf{m}$, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond $4 mu mathbf{m}$. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic $mathbf{InN}_{y}(mathbf{As}_{1-x}mathbf{Sb}_{x})_{1-y}/mathbf{Al}_{z}mathbf{In}_{1-z}$ As QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.
我们提出了一个理论研究的变形$mathbf{InN}_{pmb{y}}(mathbf{As}_{1-pmb{x}}mathbf{Sb}_{x})_{1-pmb{y}}/mathbf{Al}_{z}mathbf{In}_{1-pmb{z}}$型1量子阱(QWs)设计发射在中红外波长的光学性质。最近已经证明使用$mathbf{Al}_{z}mathbf{In}_{1-z}$ As变质缓冲层可以使晶格不匹配的In生长。在GaAs衬底上具有发射波长$underset{sim}{>}$ 3 $mu mathbf{m}$的$mathbf{As}_{1-pmb{x}}mathbf{Sb}_{pmb{x}}$量子阱。然而，关于这个新建立的平台的属性信息很少。我们对设计为3.3和$4.2 mu mathbf{m}$排放的应变平衡结构的特性和性能进行了理论分析和优化，其中我们建议加入稀释浓度的氮(N)以实现超过$4 mu mathbf{m}$的排放。我们量化了光学特性的计算趋势，以及设计和优化整体量子阱性能的能力。我们的研究结果强调了$mathbf{InN}_{y}(mathbf{As}_{1-x}mathbf{Sb}_{x})_{1-y}/mathbf{Al}_{z}mathbf{In}_{1-z}$ As量子阱在中红外发光二极管发展中的潜力，并为优化结构的生长提供了指导。
{"title":"Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes","authors":"R. Arkani, C. Broderick, E. O’Reilly","doi":"10.1109/NANO.2018.8626250","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626250","url":null,"abstract":"We present a theoretical investigation of the optical properties of metamorphic $mathbf{InN}_{pmb{y}}(mathbf{As}_{1-pmb{x}}mathbf{Sb}_{x})_{1-pmb{y}}/mathbf{Al}_{z}mathbf{In}_{1-pmb{z}}$ As type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of $mathbf{Al}_{z}mathbf{In}_{1-z}$ As metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched In. $mathbf{As}_{1-pmb{x}}mathbf{Sb}_{pmb{x}}$ QWs having emission wavelengths $underset{sim}{>}$ 3 $mu mathbf{m}$ on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and $4.2 mu mathbf{m}$, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond $4 mu mathbf{m}$. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic $mathbf{InN}_{y}(mathbf{As}_{1-x}mathbf{Sb}_{x})_{1-y}/mathbf{Al}_{z}mathbf{In}_{1-z}$ As QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127104450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626380
T. Kalkur, M. Pawlikiewicz
This paper presents a compact model implemented in Verilog-A for complementary resistive switching (CRS) devices based on nickel oxide (NiO). Device characterization enabled the creation and enhancement of the model for the complementary resistive switching RRAM including temperature dependence which is implemented in Verilog- A and could be used in circuit simulators for design of RRAM memory circuits.
{"title":"Verilog-A modeling of filamentary-based complementary resistance switching devices","authors":"T. Kalkur, M. Pawlikiewicz","doi":"10.1109/NANO.2018.8626380","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626380","url":null,"abstract":"This paper presents a compact model implemented in Verilog-A for complementary resistive switching (CRS) devices based on nickel oxide (NiO). Device characterization enabled the creation and enhancement of the model for the complementary resistive switching RRAM including temperature dependence which is implemented in Verilog- A and could be used in circuit simulators for design of RRAM memory circuits.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127510529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626395
M. Pea, De Seta, L. Di Gaspare, V. Mišeikis, C. Coletti, A. Notargiacomo
We report on the morphological investigation of nanoscale thick patterns obtained by the scanning probe assisted local oxidation technique on graphene layers grown directly on Ge (100) substrates using CVD technique. Protruding mounds and lines are produced by applying a negative voltage to the atomic force microscope probe while translating the probe tip across the sample surface. The main features of the local oxide produced and the differences with respect to similar experiments conducted on Ge or Si samples are presented.
{"title":"Scanning probe assisted local oxidation nanolithography of CVD grown graphene on Ge(l00)","authors":"M. Pea, De Seta, L. Di Gaspare, V. Mišeikis, C. Coletti, A. Notargiacomo","doi":"10.1109/NANO.2018.8626395","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626395","url":null,"abstract":"We report on the morphological investigation of nanoscale thick patterns obtained by the scanning probe assisted local oxidation technique on graphene layers grown directly on Ge (100) substrates using CVD technique. Protruding mounds and lines are produced by applying a negative voltage to the atomic force microscope probe while translating the probe tip across the sample surface. The main features of the local oxide produced and the differences with respect to similar experiments conducted on Ge or Si samples are presented.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125431988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626285
A. Kommini, Z. Akšamija
Thermoelectric (TE) devices enable robust solid-state conversion of waste heat to electricity but their applications are still limited by relatively modest efficiency. Power factor controls the TE energy conversion efficiency of a material. A higher power factor also helps to increase the passive or electronic cooling ability. Single-layer (SL) 2-dimensional (2D) materials have been analytically shown to have higher power factors [1]. In this work, we extend our 3D model to simulate quantum transport and capture energy filtering in 2D SL $text{MoS}_{2}$ that can improve power factor. Energy relaxation and quantum effects from periodic spatially varying potential barriers are modeled in the Wigner-Rode formalism. Our simulations show an increase in power factor in both cosine- and square-shaped barriers with the height of the potential barrier, resulting in over 30% power factor enhancement. This improvement in TE efficiency helps in the development of efficient waste-heat scavenging, body-heat-powered wearables, thermal sensors, and electronic cooling.
{"title":"Improving the Thermoelectric Power Factor in 2D Single-Layer MoS2 Using Periodic Potentials","authors":"A. Kommini, Z. Akšamija","doi":"10.1109/NANO.2018.8626285","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626285","url":null,"abstract":"Thermoelectric (TE) devices enable robust solid-state conversion of waste heat to electricity but their applications are still limited by relatively modest efficiency. Power factor controls the TE energy conversion efficiency of a material. A higher power factor also helps to increase the passive or electronic cooling ability. Single-layer (SL) 2-dimensional (2D) materials have been analytically shown to have higher power factors [1]. In this work, we extend our 3D model to simulate quantum transport and capture energy filtering in 2D SL $text{MoS}_{2}$ that can improve power factor. Energy relaxation and quantum effects from periodic spatially varying potential barriers are modeled in the Wigner-Rode formalism. Our simulations show an increase in power factor in both cosine- and square-shaped barriers with the height of the potential barrier, resulting in over 30% power factor enhancement. This improvement in TE efficiency helps in the development of efficient waste-heat scavenging, body-heat-powered wearables, thermal sensors, and electronic cooling.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126887656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-07-01DOI: 10.1109/NANO.2018.8626362
D. Cavallini, M. Fortunato, G. Bellis, M. S. Sarto
The present work reports the development and the piezoelectric characterization of nano-engineered thin-films of Polyvinylidene Fluoride (PVDF) and vertical array of zinc oxide nanorods (ZnO-NRs). In particular, the piezoelectric response of the produced samples was investigated by evaluating the piezoelectric coefficient $(mathrm{d}_{33})$, through Piezoresponse Force Microscopy (PFM). We compared the piezoelectric response of three different samples: a neat PVDF thin-film, an array of vertically oriented ZnO-NRs and an array of vertically oriented ZnO-NRs embedded in PVDF. We tested two types of substrates: a flexible substrate namely PET-ITO and a rigid substrate namely ITO coated glass. The highest piezoelectric response was found to be exerted by the hybrid system made of vertically aligned ZnO-NRs array embedded in PVDF on PET-ITO substrate, showing a piezoelectric coefficient, as high as 14.91 pm/V.
{"title":"PFM Characterization of Piezoelectric PVDF/ZnO-N Anorod Thin Films","authors":"D. Cavallini, M. Fortunato, G. Bellis, M. S. Sarto","doi":"10.1109/NANO.2018.8626362","DOIUrl":"https://doi.org/10.1109/NANO.2018.8626362","url":null,"abstract":"The present work reports the development and the piezoelectric characterization of nano-engineered thin-films of Polyvinylidene Fluoride (PVDF) and vertical array of zinc oxide nanorods (ZnO-NRs). In particular, the piezoelectric response of the produced samples was investigated by evaluating the piezoelectric coefficient $(mathrm{d}_{33})$, through Piezoresponse Force Microscopy (PFM). We compared the piezoelectric response of three different samples: a neat PVDF thin-film, an array of vertically oriented ZnO-NRs and an array of vertically oriented ZnO-NRs embedded in PVDF. We tested two types of substrates: a flexible substrate namely PET-ITO and a rigid substrate namely ITO coated glass. The highest piezoelectric response was found to be exerted by the hybrid system made of vertically aligned ZnO-NRs array embedded in PVDF on PET-ITO substrate, showing a piezoelectric coefficient, as high as 14.91 pm/V.","PeriodicalId":425521,"journal":{"name":"2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125976154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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