Tunnel oxide passivated contact (TOPCon) is the most widely used technology for fabricating high-efficiency silicon solar cells (SCs). This technology has been successfully scaled up and is being produced commercially by major photovoltaic (PV) manufacturers worldwide. For most commercial applications, polysilicon (poly-Si) based passivating contacts on the rear side are being used. However, the current SCs can be improved further if the recombination losses on the front side emitter and under the metal contacts can be either eliminated or minimized. Furthermore, it is essential to comprehend the various fundamental mechanisms and factors that contribute to achieving higher efficiencies. This work examines the performance of various TOPCon device structures, considering both monofacial and bifacial configurations with single-side (SS) and double-side (DS) TOPCon structures. TOPCon structures based on doped poly-Si are explored and modelled through Sentaurus TCAD software. An advanced selective-emitter (SE)- based bifacial DS-TOPCon cell is proposed and analyzed to reduce parasitic absorption and contact resistivity, thereby improving current collection efficiency. By following the SE technology, the optimized device achieved an efficiency of up to 26.7%. We believe this study provides an understanding of the excellent performance of TOPCon devices and could provide a pathway for improving the performance of advanced commercial TOPCon SCs.
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