Pub Date : 2022-06-05DOI: 10.1109/pvsc48317.2022.9938635
Andrew B. Sindermann, S. Polly, Pablo Guimerá Coll, Elijah J. Sacchitella, Brandon M. Bogner, M. Bertoni, S. Hubbard
Sonic lift-off is able to reduce average surface facet amplitude without degrading bulk material quality and is thus a promising technology for enabling repeated substrate reuse with GaAs-based photovoltaics. J-sun AM1.5G illuminated current density-voltage data and spectral response data from four devices at different stages of the spalling process have been presented. Devices grown on a commercial substrate and then acoustically-spalled as well as devices grown on a previously acoustically-spalled substrate with minimal surface treatment did not show degradation in device performance compared to the control grown on a commercial substrate, which was 17% efficient without anti-reflection coatings. Devices grown on a previously acoustically-spalled substrate and then spalled exhibited degradation in both short-circuit current density and open circuit voltage for a final 8% efficiency, indicating further process improvements are necessary to realize efficient substrate reuse.
{"title":"Progress on Substrate Reuse Using Sonic Lift-Off for GaAs- Based Photovoltaics","authors":"Andrew B. Sindermann, S. Polly, Pablo Guimerá Coll, Elijah J. Sacchitella, Brandon M. Bogner, M. Bertoni, S. Hubbard","doi":"10.1109/pvsc48317.2022.9938635","DOIUrl":"https://doi.org/10.1109/pvsc48317.2022.9938635","url":null,"abstract":"Sonic lift-off is able to reduce average surface facet amplitude without degrading bulk material quality and is thus a promising technology for enabling repeated substrate reuse with GaAs-based photovoltaics. J-sun AM1.5G illuminated current density-voltage data and spectral response data from four devices at different stages of the spalling process have been presented. Devices grown on a commercial substrate and then acoustically-spalled as well as devices grown on a previously acoustically-spalled substrate with minimal surface treatment did not show degradation in device performance compared to the control grown on a commercial substrate, which was 17% efficient without anti-reflection coatings. Devices grown on a previously acoustically-spalled substrate and then spalled exhibited degradation in both short-circuit current density and open circuit voltage for a final 8% efficiency, indicating further process improvements are necessary to realize efficient substrate reuse.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121807262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/pvsc48317.2022.9938812
Eric J. Tervo, A. Ferguson, M. Steiner, R. France
To efficiently convert heat from sources < 1000 °C to electricity with thermophotovoltaic cells, low-bandgap devices < 0.7 eV with good electrical characteristics are required. III-V semiconductors are the best material system for these applications due to their high quality and compatibility with a variety of cell architectures. However, low-bandgap III-V cells operating at ambient temperatures suffer from challenging nonradiative losses, including Auger recombination and diffusion current from the contacts. We report the modeling, fabrication, and characterization of low-bandgap InAs (0.35 eV) thermophotovoltaic cells with good electrical characteristics as evidenced by low reverse saturation currents < 20 mA/cm2. Auger losses are mitigated with a double-heterojunction p-i-n architecture that minimizes minority carrier densities in the central intrinsic InAs layer. Our results should provide strategies to design efficient thermophotovoltaic systems for solar thermal energy, waste heat recovery, and other low-temperature heat sources.
{"title":"InAs Thermophotovoltaic Cells with Low Reverse Saturation Current","authors":"Eric J. Tervo, A. Ferguson, M. Steiner, R. France","doi":"10.1109/pvsc48317.2022.9938812","DOIUrl":"https://doi.org/10.1109/pvsc48317.2022.9938812","url":null,"abstract":"To efficiently convert heat from sources < 1000 °C to electricity with thermophotovoltaic cells, low-bandgap devices < 0.7 eV with good electrical characteristics are required. III-V semiconductors are the best material system for these applications due to their high quality and compatibility with a variety of cell architectures. However, low-bandgap III-V cells operating at ambient temperatures suffer from challenging nonradiative losses, including Auger recombination and diffusion current from the contacts. We report the modeling, fabrication, and characterization of low-bandgap InAs (0.35 eV) thermophotovoltaic cells with good electrical characteristics as evidenced by low reverse saturation currents < 20 mA/cm2. Auger losses are mitigated with a double-heterojunction p-i-n architecture that minimizes minority carrier densities in the central intrinsic InAs layer. Our results should provide strategies to design efficient thermophotovoltaic systems for solar thermal energy, waste heat recovery, and other low-temperature heat sources.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125608250","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/PVSC48317.2022.9938657
G. Rodriguez-Garcia, J. Kellar, Zhengtao Zhu, I. Celik
We evaluated the potential life cycle toxicity impacts of Pb, and five other metals found in perovskite solar panels-Al, Ag, Cu, In, and Sn. We focused on their use in integrated applications-urban, agrivoltaic, buildings, and floating solar, but also included their mining and recycling. Results indicated only the mining of silver is more ecotoxic than that of lead. During a catastrophic break, aluminum emissions in general and silver for floating photovoltaics, are more ecotoxic than those of lead. In all other cases, metals evaluated are potentially as toxic as lead. Finally, the use of virgin materials for the manufacture of the panel has similar impacts as recycling those materials. However, the recovery of the bottom glass and cell is environmentally beneficial due to its silver content.
{"title":"Toxicity assessment of lead and other metals used in perovskite solar panels","authors":"G. Rodriguez-Garcia, J. Kellar, Zhengtao Zhu, I. Celik","doi":"10.1109/PVSC48317.2022.9938657","DOIUrl":"https://doi.org/10.1109/PVSC48317.2022.9938657","url":null,"abstract":"We evaluated the potential life cycle toxicity impacts of Pb, and five other metals found in perovskite solar panels-Al, Ag, Cu, In, and Sn. We focused on their use in integrated applications-urban, agrivoltaic, buildings, and floating solar, but also included their mining and recycling. Results indicated only the mining of silver is more ecotoxic than that of lead. During a catastrophic break, aluminum emissions in general and silver for floating photovoltaics, are more ecotoxic than those of lead. In all other cases, metals evaluated are potentially as toxic as lead. Finally, the use of virgin materials for the manufacture of the panel has similar impacts as recycling those materials. However, the recovery of the bottom glass and cell is environmentally beneficial due to its silver content.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125068508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/PVSC48317.2022.9938873
Deewakar Poudel, Benjamin Belfore, Adam Masters, A. Rockett, S. Marsillac
Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 °C to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Overall, AgBr seems to be a suitable transport agent and beneficial for device fabrication.
{"title":"Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells","authors":"Deewakar Poudel, Benjamin Belfore, Adam Masters, A. Rockett, S. Marsillac","doi":"10.1109/PVSC48317.2022.9938873","DOIUrl":"https://doi.org/10.1109/PVSC48317.2022.9938873","url":null,"abstract":"Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 °C to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Overall, AgBr seems to be a suitable transport agent and beneficial for device fabrication.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"238 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114003440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/pvsc48317.2022.9938784
Anna K. Braun, W. McMahon, A. Perna, K. Schulte, C. Packard, A. Ptak
In this work, we show hydride vapor phase epitaxy (HVPE) overgrowth behavior of two growth conditions on three different facet morphologies produced by controlled spalling of (100) GaAs. In situ planarization of the surface through overgrowth has potential to overcome the significant challenge facets present to direct regrowth of photovoltaic devices and enabling low-cost substrate reuse. Substrate offcut and spall depth affect the surface morphology of the facet face, and this morphology plays an important role in facilitating planarizing overgrowth. We also show that growth conditions can be tuned to improve planarization efficiency on different surfaces. These results are critical for understanding the kinetics that allow planarizing growth to enable direct reuse of spalled (100) GaAs substrates.
{"title":"Planarizing HVPE Growth on GaAs Substrates Produced by Controlled Spalling","authors":"Anna K. Braun, W. McMahon, A. Perna, K. Schulte, C. Packard, A. Ptak","doi":"10.1109/pvsc48317.2022.9938784","DOIUrl":"https://doi.org/10.1109/pvsc48317.2022.9938784","url":null,"abstract":"In this work, we show hydride vapor phase epitaxy (HVPE) overgrowth behavior of two growth conditions on three different facet morphologies produced by controlled spalling of (100) GaAs. In situ planarization of the surface through overgrowth has potential to overcome the significant challenge facets present to direct regrowth of photovoltaic devices and enabling low-cost substrate reuse. Substrate offcut and spall depth affect the surface morphology of the facet face, and this morphology plays an important role in facilitating planarizing overgrowth. We also show that growth conditions can be tuned to improve planarization efficiency on different surfaces. These results are critical for understanding the kinetics that allow planarizing growth to enable direct reuse of spalled (100) GaAs substrates.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122909813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/PVSC48317.2022.9938529
A. Jäger-Waldau, G. Kakoulaki, N. Taylor, S. Szabó
Since the introduction of the first European Renewable Energy Directive in 2009, PV installations have significantly increased to reach over 165 GWp in the European Union at the end of 2021. The new Green Deal, endorsed by the European Council in December 2020 set new targets for the GHG reductions until 2030, which already now led to a significant growth of the photovoltaic market in the European Union. What are the opportunities and challenges for the further deployment of solar photovoltaics? The lessons learned during the last decade highlight the importance of legal and regulatory continuity and reliability to ensure investor confidence. Will the Green Deal not only lead to a growth in PV capacity but to a revival of an European solar cell and module manufacturing industry?
{"title":"The Role of the European Green Deal for the Photovoltaic Market Growth in the European Union","authors":"A. Jäger-Waldau, G. Kakoulaki, N. Taylor, S. Szabó","doi":"10.1109/PVSC48317.2022.9938529","DOIUrl":"https://doi.org/10.1109/PVSC48317.2022.9938529","url":null,"abstract":"Since the introduction of the first European Renewable Energy Directive in 2009, PV installations have significantly increased to reach over 165 GWp in the European Union at the end of 2021. The new Green Deal, endorsed by the European Council in December 2020 set new targets for the GHG reductions until 2030, which already now led to a significant growth of the photovoltaic market in the European Union. What are the opportunities and challenges for the further deployment of solar photovoltaics? The lessons learned during the last decade highlight the importance of legal and regulatory continuity and reliability to ensure investor confidence. Will the Green Deal not only lead to a growth in PV capacity but to a revival of an European solar cell and module manufacturing industry?","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121837541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/pvsc48317.2022.9938612
A. Agresti, S. Pescetelli, F. Matteocci, Erica Magliano, E. Nonni, G. Bengasi, Carmelo Connelli, C. Gerardi, H. Pazniak, S. Bellani, F. Bonaccorso, F. Bizzarri, M. Foti, A. Di Carlo
Perovskite/Silicon tandem technology represents a promising route to achieve 30% power conversion efficiency, by ensuring low levelized costs energy while being competitive with the already commercialized photovoltaic (PV) technologies. Despite the impressive results demonstrated employing a two-terminal (2T) monolithic architecture, the use of record efficiency amorphous/crystalline silicon heterojunction (Si-HJT) cells with micrometer-sized textured front surface, strongly limits the possibility to perform high-temperature and solution processing of the top perovskite cell. To overcome this limitation, we develop a tandem device structure consisting in a mechanically stacked 2T perovskite/silicon tandem solar cell, with the sub-cells independently fabricated, optimized, and subsequently coupled by contacting the back electrode of the mesoscopic perovskite top cell with the texturized and metalized front contact of the silicon bottom cell. The possibility to separately optimize the two sub-cells allows to carefully choose the most promising device structure for both top and bottom cells. Indeed, semi-transparent perovskite top cell performance is boosted through a rational use of bi-dimensional materials (graphene, MXenes and functionalized MoS2) to tune the device interfaces. In addition, a protective buffer layer (PBL) based on MoO3 thin film is used to prevent damages induced by the transparent electrode sputtering deposition over the hole transporting layer. At the same time, a textured amorphous/crystalline silicon heterojunction (c-Si HTJ) cell fabricated with an in-line production process is used as state of art bottom cell. The tandem perovskite/Si tandem device demonstrates remarkable power conversion efficiency of 28%.
{"title":"2T Mechanically Stacked Perovskite/Si tandem Cells Beyond 28%: the Role of 2D Materials in Perovskite Top Cells Coupled with a Commercially Available Bifacial c-Si Heterojunction Cell","authors":"A. Agresti, S. Pescetelli, F. Matteocci, Erica Magliano, E. Nonni, G. Bengasi, Carmelo Connelli, C. Gerardi, H. Pazniak, S. Bellani, F. Bonaccorso, F. Bizzarri, M. Foti, A. Di Carlo","doi":"10.1109/pvsc48317.2022.9938612","DOIUrl":"https://doi.org/10.1109/pvsc48317.2022.9938612","url":null,"abstract":"Perovskite/Silicon tandem technology represents a promising route to achieve 30% power conversion efficiency, by ensuring low levelized costs energy while being competitive with the already commercialized photovoltaic (PV) technologies. Despite the impressive results demonstrated employing a two-terminal (2T) monolithic architecture, the use of record efficiency amorphous/crystalline silicon heterojunction (Si-HJT) cells with micrometer-sized textured front surface, strongly limits the possibility to perform high-temperature and solution processing of the top perovskite cell. To overcome this limitation, we develop a tandem device structure consisting in a mechanically stacked 2T perovskite/silicon tandem solar cell, with the sub-cells independently fabricated, optimized, and subsequently coupled by contacting the back electrode of the mesoscopic perovskite top cell with the texturized and metalized front contact of the silicon bottom cell. The possibility to separately optimize the two sub-cells allows to carefully choose the most promising device structure for both top and bottom cells. Indeed, semi-transparent perovskite top cell performance is boosted through a rational use of bi-dimensional materials (graphene, MXenes and functionalized MoS2) to tune the device interfaces. In addition, a protective buffer layer (PBL) based on MoO3 thin film is used to prevent damages induced by the transparent electrode sputtering deposition over the hole transporting layer. At the same time, a textured amorphous/crystalline silicon heterojunction (c-Si HTJ) cell fabricated with an in-line production process is used as state of art bottom cell. The tandem perovskite/Si tandem device demonstrates remarkable power conversion efficiency of 28%.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121274006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/PVSC48317.2022.9938919
O. Westbrook, S. MacAlpine, David A. Bowersox
We quantify measured and modeled snow losses at four utility-scale single-axis tracking photovoltaic (PV) power plants in Colorado. Across 50 site-months of data collected over three winters, the Marion and Townsend snow loss models exhibited similar absolute bias errors, although the Townsend model had lower monthly root mean square error. Based on our results, we recommend that, for PV systems in Colorado and similar climates, the Townsend and Marion model predictions be averaged together to generate the most accurate snow loss predictions for monofacial tracking PV facilities, and that solely the Townsend model be used for bifacial tracking PV facilities.
{"title":"Comparison of Measured and Modeled Snow Losses for Photovoltaic Systems in Colorado","authors":"O. Westbrook, S. MacAlpine, David A. Bowersox","doi":"10.1109/PVSC48317.2022.9938919","DOIUrl":"https://doi.org/10.1109/PVSC48317.2022.9938919","url":null,"abstract":"We quantify measured and modeled snow losses at four utility-scale single-axis tracking photovoltaic (PV) power plants in Colorado. Across 50 site-months of data collected over three winters, the Marion and Townsend snow loss models exhibited similar absolute bias errors, although the Townsend model had lower monthly root mean square error. Based on our results, we recommend that, for PV systems in Colorado and similar climates, the Townsend and Marion model predictions be averaged together to generate the most accurate snow loss predictions for monofacial tracking PV facilities, and that solely the Townsend model be used for bifacial tracking PV facilities.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132642581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/pvsc48317.2022.9938870
Alex Jimenez, Alejandro Navarro, Sergio Girlado, Kunal J. Tiwari, M. Placidi, L. Calvo‐Barrio, J. Puigdollers, E. Saucedo, Z. J. Li-Kao
The potential of Kesterite absorbers used both as top or bottom cell, in combination with crystalline silicon bottom cell and a Perovskite top cell respectively, is investigated using a combination of optical and electrical modelling. Using a transfer matrix approach to determine the transmission of a given top cell, the electrical behavior of the bottom cell in tandem condition is evaluated. Unlike past studies on a related topic, the results reported here are deemed close to quantitative, relying on a consistent set of experimental data for both the optical and electrical model. After demonstrating the closeness of a simulated CZTSe baseline solar cell with its experimental counterpart, an incremental set of experimentally realistic optimizations are investigated to further enhance the PV performance. A combination of a 21%-Perovskite subcell with a 17%-CZTSe subcell is found sufficient to overcome the single junction detailed balance limit and approach the 30% efficiency threshold. Following a similar approach, a wide bandgap CZG(S,Se) top cell is evaluated in combination with a state-of-the-art c-Si bottom cell. Such design is found markedly more challenging for the Kesterite top cell with the necessary use of innovative selective contacts and a reduction of the bulk defect density by two orders of magnitude to approach the 30% efficiency threshold. Each specific optimization will be discussed in the context of current experimental trends in Kesterite solar cells, and this work will conclude by offering perspectives for full Kesterite tandem solar cells as well as multijunction devices with 3 subcells or more. This work offers, for the first time, a reliably quantified overview of the potential of Kesterite absorbers in multijunction devices, and will help experimentalists identifying and focusing their efforts toward the current bottlenecks of this technology.
{"title":"Which potential for Kesterite absorbers in tandem solar cells: a quantitative modelling approach","authors":"Alex Jimenez, Alejandro Navarro, Sergio Girlado, Kunal J. Tiwari, M. Placidi, L. Calvo‐Barrio, J. Puigdollers, E. Saucedo, Z. J. Li-Kao","doi":"10.1109/pvsc48317.2022.9938870","DOIUrl":"https://doi.org/10.1109/pvsc48317.2022.9938870","url":null,"abstract":"The potential of Kesterite absorbers used both as top or bottom cell, in combination with crystalline silicon bottom cell and a Perovskite top cell respectively, is investigated using a combination of optical and electrical modelling. Using a transfer matrix approach to determine the transmission of a given top cell, the electrical behavior of the bottom cell in tandem condition is evaluated. Unlike past studies on a related topic, the results reported here are deemed close to quantitative, relying on a consistent set of experimental data for both the optical and electrical model. After demonstrating the closeness of a simulated CZTSe baseline solar cell with its experimental counterpart, an incremental set of experimentally realistic optimizations are investigated to further enhance the PV performance. A combination of a 21%-Perovskite subcell with a 17%-CZTSe subcell is found sufficient to overcome the single junction detailed balance limit and approach the 30% efficiency threshold. Following a similar approach, a wide bandgap CZG(S,Se) top cell is evaluated in combination with a state-of-the-art c-Si bottom cell. Such design is found markedly more challenging for the Kesterite top cell with the necessary use of innovative selective contacts and a reduction of the bulk defect density by two orders of magnitude to approach the 30% efficiency threshold. Each specific optimization will be discussed in the context of current experimental trends in Kesterite solar cells, and this work will conclude by offering perspectives for full Kesterite tandem solar cells as well as multijunction devices with 3 subcells or more. This work offers, for the first time, a reliably quantified overview of the potential of Kesterite absorbers in multijunction devices, and will help experimentalists identifying and focusing their efforts toward the current bottlenecks of this technology.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"213 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133266720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-06-05DOI: 10.1109/pvsc48317.2022.9938809
Elika T. Shirazi, W. Eggink, Xitong Zhu, A. Reinders
This study focuses on the design of solar powered objects which can be integrated in the landscapes and/or the built environment by optimally using design features of solar technologies, such as color, transparency, surface patterns and form giving. The objects presented in this study are various conceptual designs created by student teams of University of Twente in 2021, covering a wide range of applications connecting to users and reducing environmental impact, that are: (part of) a building, a mobility product, a cityscape, natural landscape, or a newly designed thing which seamlessly fits in its environment.
{"title":"Design with Integrated PV Technologies in Various Products and Environments","authors":"Elika T. Shirazi, W. Eggink, Xitong Zhu, A. Reinders","doi":"10.1109/pvsc48317.2022.9938809","DOIUrl":"https://doi.org/10.1109/pvsc48317.2022.9938809","url":null,"abstract":"This study focuses on the design of solar powered objects which can be integrated in the landscapes and/or the built environment by optimally using design features of solar technologies, such as color, transparency, surface patterns and form giving. The objects presented in this study are various conceptual designs created by student teams of University of Twente in 2021, covering a wide range of applications connecting to users and reducing environmental impact, that are: (part of) a building, a mobility product, a cityscape, natural landscape, or a newly designed thing which seamlessly fits in its environment.","PeriodicalId":435386,"journal":{"name":"2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133448358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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