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A Multiresponse Image Fusion for High Dynamic Range CMOS Image Sensor Combining Dual Conversion Gain and Logarithmic Response 基于双转换增益和对数响应的高动态范围CMOS图像传感器多响应图像融合
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-25 DOI: 10.1049/cds2/1622944
Shanshan Lou, Chunyan Li, Qian Jiang, Botao Xiong, Yuchun Chang

This article introduces a multiresponse image fusion method tailored for a high dynamic range (HDR) CMOS image sensor (CIS), which combines dual conversion gain (DCG) and logarithmic responses within a single exposure. Utilizing the imaging characteristics of the sensor together with a proposed quality perceptive strategy, the presented fusion method achieves a light-weight multiresponse fusion stage, which selects the optimal response of the pixels under different illumination from the captured images. The fused image is of better quality compared to a linear combination of weighted images. Moreover, the proposed multiresponse image fusion method can eventually acquire HDR image in real-time.

本文介绍了一种针对高动态范围(HDR) CMOS图像传感器(CIS)量身定制的多响应图像融合方法,该方法在单次曝光中结合了双转换增益(DCG)和对数响应。该融合方法利用传感器的成像特性,结合所提出的质量感知策略,实现了轻量级的多响应融合阶段,从捕获的图像中选择不同光照下像素点的最优响应。与加权图像的线性组合相比,融合后的图像质量更好。此外,所提出的多响应图像融合方法最终能够实时获取HDR图像。
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引用次数: 0
Exploring the Switching Instability of CBRAM for Random Number Generator Applications 探讨CBRAM在随机数发生器中的切换不稳定性
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-24 DOI: 10.1049/cds2/9982211
Weixin Xu, Hajira S. Bazaz, Asep Nugroho, Irwan Purnama, Zohreh Hajiabadi, Aiden Graham, Alexander-Hanyu Wang, Sridhar Chandrasekaran, Firman M. Simanjuntak

The coexistence of nonvolatile and volatile switching characteristics in ZnO-based conducting bridge random access memory (CBRAM) devices and the feasibility of the cycle-to-cycle fluctuation of both characteristics for data storage and random number generator (RNG) applications are investigated. The insertion of a 6-nm-thick Ti barrier layer between the Ag top electrode (TE) and the ZnO switching layer improves the switching stability and the memory window up to five orders of magnitude. The employment of current compliance (CC) of 1 mA leads to a permanent LRS; meanwhile, CC lower than 100 uA exhibits volatile switching characteristics. Although the lower CC operations might not be applicable for data storage applications, their switching fluctuations can be used as inputs for generating random bitstreams. An RNG circuit design is proposed, and the randomness of the bitstreams is evaluated using the NIST randomness test suite. The volatile switching induced by the lower CC tends to produce bitstreams with a better randomicity than the nonvolatile one, where the resistance state of the device operated with a CC of 10 uA is able to generate 1600 bits that pass seven out of seven NIST tests. We conduct statistical analysis to shed light on the relationship between the resistance states and the quality of the produced random bitstream. In contrast to popular opinion, the coefficient of variation might not be the best method to quantify the fluctuation of the resistance state in our case. Therefore, we propose the switching fluctuation factor (FF) to determine the threshold value of the resistance state that can produce a sufficient random bitstream; it is found that our RNG circuit requires a threshold FF of 96% to produce a bitstream that passes at least four out of seven tests. This work not only proposes a solution to enhance the switching stability for data storage applications but also provides insight into the exploitation of switching instability for RNG applications, where a single device can be programmed to have both capabilities, rendering programmable and multifunctional electronics.

研究了zno基导电桥随机存取存储器(CBRAM)器件中非易失性和易失性开关特性的共存,以及这两种特性在数据存储和随机数发生器(RNG)应用中周期性波动的可行性。在银顶电极(TE)和ZnO开关层之间插入6 nm厚的Ti势垒层,提高了开关稳定性,并将记忆窗口提高了5个数量级。采用1ma的电流合规性(CC)导致永久LRS;同时,低于100 uA的CC表现出挥发性开关特性。虽然较低的CC操作可能不适用于数据存储应用,但它们的开关波动可以用作生成随机比特流的输入。提出了一种RNG电路设计,并使用NIST随机测试套件评估了比特流的随机性。由较低CC诱导的易失性交换倾向于产生比非易失性交换具有更好随机性的比特流,其中在CC为10 uA时运行的设备的电阻状态能够产生1600个比特,通过7个NIST测试中的7个。我们通过统计分析来揭示抵抗状态与产生的随机比特流质量之间的关系。与普遍观点相反,在我们的情况下,变异系数可能不是量化阻力状态波动的最佳方法。因此,我们提出了开关波动因子(FF)来确定能够产生足够随机比特流的电阻状态阈值;我们发现我们的RNG电路需要96%的阈值FF来产生至少通过7个测试中的4个的比特流。这项工作不仅提出了一种提高数据存储应用的切换稳定性的解决方案,而且还提供了对RNG应用中切换不稳定性的利用的见解,其中单个设备可以被编程为具有这两种功能,呈现可编程和多功能电子设备。
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引用次数: 0
Investigation on High Performance Lead-Free GA0.05FA0.93SnI3-Based Hybrid-Halide Perovskite Solar Cell 高性能无铅ga0.05 fa0.93 sni3基混合卤化物钙钛矿太阳能电池的研究
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-22 DOI: 10.1049/cds2/6765341
Srinivas Mattaparthi, Didla Sristitha, Banothu Venugopal, Vijay Naik Mudavath, Himanshu Karan

In this article, we present a lead-free hybrid-halide perovskite solar cell (PSC) using guanidinium (GA)-formamidinium tin iodide (GA0.05FA0.93SnI3) as the absorber layer (AL), the performance metrics analyses on the light of short-circuit current (Isc), power conversion efficiency (PCE), open circuit voltage (Voc), and fill-factor (FF). Utilizing the SCAPS-1D numerical program, we have optimized the material and device parameters, including thickness of AL, electron affinity, defect density, doping concentration, and series and shunt resistances. The GA0.05FA0.93SnI3 AL exhibits highly stable and nontoxic in nature. The proposed hybrid halide-based PSC achieved an enhanced PCE (27.55%) in comparison with reported cutting-edge PSCs, under the AM1.5G spectrum.

本文提出了一种以胍(GA)-甲酰胺碘化锡(GA0.05FA0.93SnI3)为吸收层(AL)的无铅混合卤化物钙钛矿太阳能电池(PSC),并对其进行了光短路电流(Isc)、功率转换效率(PCE)、开路电压(Voc)和填充因子(FF)等性能指标分析。利用SCAPS-1D数值程序,我们优化了材料和器件参数,包括AL厚度、电子亲和度、缺陷密度、掺杂浓度、串联和分流电阻。GA0.05FA0.93SnI3 AL具有高度的稳定性和无毒性。在AM1.5G频谱下,与目前报道的先进PSC相比,提出的基于卤化物的混合PSC实现了更高的PCE(27.55%)。
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引用次数: 0
A High-Efficiency CNN Accelerator With Mixed Low-Precision Quantization 混合低精度量化的高效CNN加速器
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-20 DOI: 10.1049/cds2/5433740
Xianghong Hu, Jinhui Pan, Yue Ding, Wenji Huang, Zhejun Zheng, Xueming Li, Hongmin Huang, Xiaoming Xiong

In the field of hardware accelerators for convolutional neural network (CNN) inference, quantization techniques have been widely employed to enhance the performance. The prevailing quantization scheme of the accelerator at present is using signed 8-bit integer variables (INT8). CNN accelerators support INT8, while lower precision INT4 is less common. Accelerators supporting INT4 depthwise separable convolution (DWC) are even rarer. Therefore, this article presents a high-performance CNN accelerator that not only supports 8-bit and 4-bit data but also supports standard convolution (SC) and DWC. Additionally, in order to improve the transmission efficiency of DWC, an intermediate cache strategy is proposed, using a pointwise convolution (PW) input buffer (PW BUF) to store output data from depthwise convolution (DW) to avoid off-chip transmission. Furthermore, to address the issue of a DSP cannot perform two 4 × 4-bit multiplications when dealing with DW, a processing element (PE) is designed to make full use of DSP hardware resources. Finally, this accelerator is implemented on ZYNQ ZC706 with a frequency of 200 MHz. Experimental results show that it achieves a performance up to 307.88 giga operations per second (GOPS) on VGG, reaching 97.9% peak performance; while on MobileNet, it achieves efficient performance with 206.43 GOPS with only 392 DSPs. Compared with mainstream CNN accelerators, it increases DSP utilization rate (GOPS/DSP) by 1.5× to 33.5×.

在卷积神经网络(CNN)推理硬件加速器领域,量化技术被广泛用于提高性能。目前主流的加速器量化方案是使用有符号8位整数变量(INT8)。CNN加速器支持INT8,而精度较低的INT4较少见。支持INT4深度可分离卷积(DWC)的加速器就更少了。因此,本文提出了一种高性能的CNN加速器,它不仅支持8位和4位数据,还支持标准卷积(SC)和DWC。此外,为了提高DWC的传输效率,提出了一种中间缓存策略,利用点向卷积(PW)输入缓冲区(PW BUF)来存储深度卷积(DW)的输出数据,以避免片外传输。此外,为了解决DSP在处理DW时不能执行两次4 × 4位乘法的问题,设计了一个处理单元(PE)来充分利用DSP硬件资源。最后,该加速器在ZYNQ ZC706上实现,频率为200mhz。实验结果表明,该方法在VGG上实现了高达307.88千兆操作/秒(GOPS)的性能,峰值性能达到97.9%;而在MobileNet上,仅用392个dsp就可以实现206.43 GOPS的高效性能。与主流CNN加速器相比,DSP利用率(GOPS/DSP)提高1.5倍至33.5倍。
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引用次数: 0
Challenges in Modelling Analog PUFs: A Study of Hybrid and Diode Triode Current Mirror Inverter PUF Under Machine Learning Attacks 模拟PUF建模的挑战:机器学习攻击下混合和二极管三极管电流镜逆变器PUF的研究
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-18 DOI: 10.1049/cds2/3903508
Gisha Chittattukara Girijan, Ananda Sankar Chakraborty, Rajat Subhra Chakraborty, Bijoy Antony Jose, Jimson Mathew

Physically unclonable function-based authentication is one of the widely accepted and promising hardware security primitives. For security applications, strong PUF circuits can generate a large number of challenge–response pairs (CRPs) for authentication. These CRPs can, however, be utilised by machine learning (ML) techniques to model the physically unclonable function (PUF) and forecast its responses. In this paper, we evaluate the robustness of analog PUF designs, specifically hybrid current mirror inverter (HCMI) and diode triode current mirror inverter (DTCMI) PUFs, against ML attacks. The XOR-tree configuration in the PUF amplifies entropy and introduces additional nonlinearity, making the CRP mapping significantly harder to model. Deep neural networks (DNNs) attack and the PyPUF toolbox were utilised to evaluate the modelling attacks on the HCMI and DTCMI PUFs. Experiments were conducted using CRP counts ranging from 10,000 to 1,000,000. Despite varying the number of hidden layers and nodes in the DNN model, the attack accuracy consistently remained near 50%, indicating the robustness of analog PUFs to ML-based modelling techniques. The evaluation using the PyPUF toolbox also resulted in consistent accuracy near 50%, indicating poor learnability. The results highlight the strong resistance of XOR-tree-enhanced HCMI and DTCMI analog PUF designs to advanced machine-learning attacks compared to the vulnerabilities of conventional digital PUFs.

物理上不可克隆的基于函数的身份验证是被广泛接受和有前途的硬件安全原语之一。对于安全应用,强大的PUF电路可以生成大量的质询响应对(CRPs)用于身份验证。然而,这些crp可以通过机器学习(ML)技术来模拟物理不可克隆功能(PUF)并预测其响应。在本文中,我们评估了模拟PUF设计的鲁棒性,特别是混合电流镜逆变器(HCMI)和二极管三极管电流镜逆变器(DTCMI) PUF对ML攻击的鲁棒性。PUF中的xor树结构放大了熵并引入了额外的非线性,使得CRP映射显着难以建模。利用深度神经网络(dnn)攻击和PyPUF工具箱来评估对HCMI和DTCMI puf的建模攻击。实验使用的CRP计数从10,000到1,000,000不等。尽管DNN模型中隐藏层和节点的数量不同,但攻击准确率始终保持在50%左右,这表明模拟puf对基于ml的建模技术具有鲁棒性。使用PyPUF工具箱进行的评估也导致了接近50%的一致性准确性,这表明可学习性很差。与传统数字PUF的漏洞相比,结果突出了xor树增强HCMI和DTCMI模拟PUF设计对高级机器学习攻击的强大抵抗力。
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引用次数: 0
A Time Domain ISFET With Dynamic Reference Switching 具有动态参考开关的时域ISFET
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-11-15 DOI: 10.1049/cds2/9569273
Jose Cortes Guzman, Pablo G. Ledesma Lopez, Andreas Tsiamis, David R. S. Cummings, Srinjoy Mitra

This paper presents an enhanced linear pulse-frequency modulator (LPFM) ion-sensitive field-effect transistor (ISFET) architecture with a programmable dynamic range for pH detection. The circuit encodes the pH signal into the frequency domain. This proposed method is shown to have higher stability for supply variation. A dynamic referencing scheme is used to increase the stability of the recording over long periods. The circuit’s operating point and dynamic range can be programmed, enhancing the versatility of the architecture. The design was implemented in a 0.18 µm standard CMOS process, with a sensing area as an extended gate electrode of 125 µm × 125 µm. The architecture was electrically and electrochemically characterised. The ISFET chip was post-processed by thinning the passivation layer over the sensing area. The results showed a boost in the sensitivity of 230%, an increase of 9% in the passivation capacitance with an intact SiO2 layer, and a 45% reduction of the Si3N4 layer. Compared to a rapid decay in signal quality, the dynamic reference method showed consistent measurements over hours. The circuit also showed very low sensitivity for around 25% supply variation.

本文提出了一种具有可编程动态范围的用于pH检测的增强型线性脉冲频率调制器(LPFM)离子敏感场效应晶体管(ISFET)结构。电路将pH信号编码到频域。结果表明,该方法对供给量变化具有较高的稳定性。动态参考方案用于增加长时间记录的稳定性。电路的工作点和动态范围可编程,增强了结构的通用性。该设计采用0.18 μ m标准CMOS工艺,传感区域为125 μ m × 125 μ m的扩展栅极。该结构具有电学和电化学特征。对ISFET芯片进行后处理,在传感区域上减薄钝化层。结果表明,在完整的SiO2层中,灵敏度提高了230%,钝化电容提高了9%,而Si3N4层的钝化电容降低了45%。与信号质量的快速衰减相比,动态参考方法在数小时内显示出一致的测量结果。该电路对约25%的电源变化也显示出非常低的灵敏度。
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引用次数: 0
An FFT Optimal Scaling Vector Search Scheme Based on Dynamic Programming 一种基于动态规划的FFT最优缩放向量搜索方案
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-31 DOI: 10.1049/cds2/5773930
Jinwei Xie, Yubin Zhu, Kaining Han, Jianhao Hu

The fast Fourier transform (FFT) is widely used in digital signal processing. However, hardware implementations of the discrete Fourier transform (DFT)/FFT are limited by word length constraints, necessitating truncation, saturation, and scaling operations to balance hardware resources and computational performance. The choice of a suitable scaling vector significantly affects FFT efficiency. This paper introduces a novel estimation model for FFT error power, accounting for both quantization and saturation errors. Based on this model, we propose a dynamic programming (DP)-based scaling vector search scheme to reduce the search space and computational complexity. After 1000 experiments, the model demonstrated a mean and variance of relative error in signal-to-noise ratio (SNR) of 0.063 and 0.35, proving its effectiveness. In a case study of a 1024-point FFT, our model accurately estimated error power. While the exhaustive search yielded an optimal SNR of 65.91 dB, our method reduced the search space by 3600 times, with only a 0.3 dB loss in SNR. In a 256-point FFT hardware implementation, performance improved by over 10 dB. Our scheme achieves SNR performance comparable to other methods when bit width is fixed and superior SNR when bit width is variable. This approach offers guidance for selecting scaling vectors in FFT hardware design.

快速傅里叶变换(FFT)在数字信号处理中有着广泛的应用。然而,离散傅立叶变换(DFT)/FFT的硬件实现受到字长约束的限制,需要截断、饱和和缩放操作来平衡硬件资源和计算性能。选择合适的缩放向量对FFT效率有显著影响。本文介绍了一种考虑量化和饱和误差的FFT误差功率估计模型。在此模型的基础上,提出了一种基于动态规划(DP)的缩放向量搜索方案,以减少搜索空间和计算复杂度。经过1000次实验,该模型在信噪比(SNR)下的相对误差均值和方差分别为0.063和0.35,证明了该模型的有效性。在1024点FFT的案例研究中,我们的模型准确地估计了误差功率。虽然穷举搜索产生65.91 dB的最佳信噪比,但我们的方法将搜索空间减少了3600倍,信噪比仅损失0.3 dB。在256点FFT硬件实现中,性能提高了10 dB以上。当位宽固定时,该方案的信噪比性能与其他方法相当,当位宽可变时,该方案的信噪比优于其他方法。该方法为FFT硬件设计中缩放向量的选择提供了指导。
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引用次数: 0
Bayesian-Optimization-Based Post-Silicon Offset-Cancelation Technique for Analog Multipliers 基于贝叶斯优化的模拟乘法器后硅偏移抵消技术
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-10-31 DOI: 10.1049/cds2/5591883
Thisara Kulatunga, Svetlana Yanushkevich, Leonid Belostotski

This paper presents a software-controlled offset-cancelation technique for analog multipliers that relies on the Bayesian-optimization algorithm. The capability of the technique was investigated on a test multiplier, which was developed for future use in machine learning (ML) accelerators whose convergence is sensitive to process-variation-induced DC offsets. By adjusting the multiplier biasing voltages, the proposed Bayesian-optimization-based method was able to reduce the offset within ±1.8 mV from an uncorrected maximum offset of 10.6 mV. In addition to reducing offsets, the measurements of the 65-nm CMOS multiplier also showed an average linearity-error improvement of nearly 10%, from 12.2% prior to offset correction to 2.2% after correction. We demonstrate that the proposed offset correction improved the learning outcome accuracy for MNIST dataset digit classification from approximately 10% to 90%.

本文提出了一种基于贝叶斯优化算法的软件控制模拟乘法器偏移抵消技术。该技术的性能在一个测试乘法器上进行了研究,该乘法器是为将来用于机器学习(ML)加速器而开发的,其收敛性对过程变化引起的直流偏移敏感。通过调整乘法器偏置电压,基于贝叶斯优化的方法能够将未校正的最大偏置10.6 mV减小到±1.8 mV。除了减少偏移之外,65纳米CMOS乘法器的测量结果还显示,平均线性误差改善了近10%,从偏移校正前的12.2%降至校正后的2.2%。我们证明了所提出的偏移校正将MNIST数据集数字分类的学习结果准确率从大约10%提高到90%。
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引用次数: 0
Design and Simulation of a Wideband 3-Bit Phase Shifter for 4.5–5.5 GHz Applications 4.5-5.5 GHz宽带3位移相器的设计与仿真
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-29 DOI: 10.1049/cds2/5377138
Sena Taş, Fırat Kaçar

In this article, a phase shifter circuit designed for next-generation communication systems was presented. Operating at 4.5–5.5 GHz, the circuit in question is a 3-bit all-pass LC lattice, which was initially analyzed using MATLAB. Following this analysis, the circuit was set up and simulated in advanced design system (ADS) using numerical values derived from the MATLAB simulations. A switch capacitor is employed as the switching element within the circuit. For phase shifts of 45°, 90°, and 180°, the phase errors are 3°, 9°, and 0°, respectively, while the power losses are 1.5 dB, 3 dB, and 1.9 dB, respectively.

本文介绍了一种用于下一代通信系统的移相电路。所讨论的电路工作在4.5-5.5 GHz,是一个3位全通LC晶格,最初使用MATLAB对其进行了分析。在此基础上,利用MATLAB仿真得出的数值,在高级设计系统(ADS)中对电路进行了搭建和仿真。开关电容被用作电路中的开关元件。当相移为45°、90°和180°时,相位误差分别为3°、9°和0°,功率损失分别为1.5 dB、3 dB和1.9 dB。
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引用次数: 0
A Review of Performance and Reliability Issues in D Flip-Flops for Future Artificial Intelligence and Internet of Things Applications 面向未来人工智能和物联网应用的D触发器性能和可靠性问题综述
IF 1.2 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-09-26 DOI: 10.1049/cds2/7132642
Syeda Hurmath Juveria, R. Shashank, J. Ajayan, Amit Krishna Dwivedi, D. Nirmal

In this paper, various D flip-flops (FFs) (DFFs) are studied and analyzed based on the performance and reliability effects of different architectures, technology, area, power, delay, and several other key performance parameters of DFFs. Based on these parameters, a few selected DFFs such as C2SFF, conditional-bridging FF (CBFF)-S, self-shut-off pulsed latch (SSPL), retentive true signal phased clock (R-TSPC), mTGFF, mC2MOS, FS-TSPC-DET-FF, and P-FF, are briefly reviewed for different architectures and technologies, with the trade-off between the various performance parameters discussed in this paper. Comparative analysis is done for the selected DFFs on technology, supply voltage, set-up time, delay, power consumption, and area. Reliability effects on DFFs and aging effect on FFs are reviewed for timing yield-aware lifetime reliability (TYR) based on the process variations (PVs) and bias temperature instability (BTI). A brief review on applications of DFFs in internet of thing (IoT) devices and artificial intelligence (AI), such as frequency divider, dual-modulus prescaler, time-to-digital converter (TDC), shifter, and synchronizer, is also presented.

本文对各种D触发器(dff)进行了研究和分析,分析了dff的不同架构、技术、面积、功耗、延迟等几个关键性能参数对性能和可靠性的影响。基于这些参数,本文简要介绍了几种dff,如C2SFF、条件桥接FF (CBFF)-S、自关断脉冲锁存器(SSPL)、保留真信号相控时钟(R-TSPC)、mTGFF、mC2MOS、fs - tspc - dt -FF和P-FF,并讨论了各种性能参数之间的权衡。对所选dff在技术、电源电压、设置时间、延时、功耗和面积等方面进行了比较分析。在基于工艺变化(pv)和偏置温度不稳定性(BTI)的产量感知寿命可靠性(TYR)中,综述了dff的可靠性效应和老化效应。简要介绍了dff在物联网(IoT)设备和人工智能(AI)中的应用,如分频器、双模预分频器、时间-数字转换器(TDC)、移位器和同步器。
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引用次数: 0
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