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An energy-efficient dynamic comparator in Carbon Nanotube Field Effect Transistor technology for successive approximation register ADC applications 碳纳米管场效应晶体管技术中用于逐次逼近寄存器ADC应用的节能动态比较器
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2022-03-02 DOI: 10.1049/cds2.12112
Hamid Mahmoodian, Mehdi Dolatshahi, S. Mohammadali Zanjani, Mohammad Amin Honarvar

In this paper, a latch-based energy-efficient dynamic comparator is presented in Carbon Nanotube Field Effect Transistor (CNTFET) technology. The proposed comparator consists of two main stages: pre-amplifier and latch. The latch stage is designed for the main purpose of low-power consumption and high-speed performances. The proposed speed-up technique for the latch structure controls the threshold voltage (Vth) of the cross-coupled inverters. So, the delay of the latch stage decreases and consequently, the overall delay of the comparator circuit is also reduced up to 19.4% while the maximum speed performance of the proposed comparator increases by 54% compared to the conventional double-tail dynamic comparator. Additionally, the use of the proposed distinctive structure for the tail transistors in the latch stage, leads to more than 11% reduction in the energy per conversion of the proposed circuit compared to the conventional double-tail dynamic comparator. To verify the circuit performances, the comparator circuit is simulated in HSPICE using 32 nm CNTFET Stanford model technology parameters. The simulation results show that the proposed comparator with the proposed speed-up approach can operate up to 14.2 GHz with a sensitivity of 30 μV at the supply voltage of 1 V, while consumes only 42.38 μW of power. Therefore, the proposed comparator can be used in high-resolution (up to 12 bit) and high-speed low-power analogue-to-digital converter applications. Moreover, the effects of the non-ideal fabrication process (including the pitch and the threshold voltage variations), supply voltage and temperature variations are investigated in this work. Monte-Carlo analysis shows that the standard deviation of the offset voltage is approximately 1.24 mV. Finally, the kickback noise of the proposed comparator is obtained as 80 μV, which shows the proper performance of the proposed comparator circuit in comparison with other reported designs.

在碳纳米管场效应晶体管(CNTFET)技术中,提出了一种基于锁存器的节能动态比较器。所提出的比较器由两个主要级组成:前置放大器和锁存器。锁存器设计的主要目的是为了实现低功耗和高速性能。所提出的锁存器结构加速技术控制交叉耦合逆变器的阈值电压。因此,锁存阶段的延迟减少,因此,比较器电路的总延迟也减少了19.4%,而与传统的双尾动态比较器相比,所提出的比较器的最大速度性能提高了54%。此外,与传统的双尾动态比较器相比,在锁存阶段使用所提出的尾部晶体管的独特结构,可使所提出电路的每次转换能量减少11%以上。为了验证电路的性能,采用32 nm CNTFET斯坦福模型技术参数在HSPICE中对比较器电路进行了仿真。仿真结果表明,在电源电压为1 V时,采用加速方法的比较器工作频率可达14.2 GHz,灵敏度为30 μV,功耗仅为42.38 μW。因此,所提出的比较器可用于高分辨率(高达12位)和高速低功耗模数转换器应用。此外,本文还研究了非理想制造工艺(包括节距和阈值电压变化)、电源电压和温度变化的影响。蒙特卡罗分析表明,偏置电压的标准差约为1.24 mV。最后,比较器的反扰噪声为80 μV,与其他已报道的比较器电路相比较,表明该比较器电路具有良好的性能。
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引用次数: 2
Optical properties of a-Si:H thin-film transistors by illumination by white light with different colour temperatures 不同色温白光照射下a-Si:H薄膜晶体管的光学特性
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2022-02-27 DOI: 10.1049/cds2.12114
Jui-Hung Chang, Chia-Lun Lee, Fu-Hsing Chen, Chih-Lung Lin

This work investigates the optical properties of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) using the transmittances of colour filters and the spectra of commercialised white light-emitting diodes (LEDs). The ratios of the measured photocurrents obtained using the TFTs that are covered and are not covered colour filters are related to the effective illumination from white LEDs with different colour temperatures that pass through the colour filters. A new factor that is based on these ratios of photocurrents is proposed to evaluate the output characteristics of optical sensors with our previously developed white-light photocurrent gating (WPCG) structure. The analytical results demonstrate that the proposed factor and the output voltages of the WPCG structure are highly correlated with each other, favouring the optimisation of the design parameters to realise an optical sensor that is highly reliable under diverse conditions for use in large interactive displays.

本研究利用彩色滤光片的透射率和商用白光发光二极管(led)的光谱研究了氢化非晶硅薄膜晶体管(a-Si:H TFTs)的光学特性。使用覆盖和未覆盖滤色器的tft获得的测量光电流的比率与通过滤色器的具有不同色温的白光led的有效照明有关。提出了一个基于这些光电流比率的新因子来评估我们先前开发的白光光电流门控(WPCG)结构的光传感器的输出特性。分析结果表明,所提出的因子和WPCG结构的输出电压彼此高度相关,有利于优化设计参数,以实现在各种条件下高度可靠的光学传感器,用于大型交互式显示器。
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引用次数: 0
Frequency generator demonstration using half mode Substrate Integrated Waveguide (SIW) structures for chipless Radio Frequency Identification (RFID) reader 使用半模基片集成波导(SIW)结构的无芯片射频识别(RFID)阅读器的频率发生器演示
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2022-02-24 DOI: 10.1049/cds2.12113
Vijay Sharma, Mohammad Hashmi

A frequency generator based on the forward coupler principle is proposed. The proposed design, intended for high-frequency applications, uses Half-Mode Substrate Integrated Waveguide structure to realise the forward coupler. It thus achieves compactness, requiring approximately half the area compared to Substrate Integrated Waveguide structures, and supports non Transverse Electromagnetic (TEM) functionality. The non-TEM environment provides the flexibility to use the frequency generator for chipless Radio Frequency Identification readers in the sub-GHz band and mm-wave range. Full-wave simulations and the subsequent measurements on a prototype developed on Rogers 3006 substrate performed for the forward coupler resonators and frequency generator validate the proposed design concept.

提出了一种基于正向耦合器原理的频率发生器。本设计针对高频应用,采用半模基板集成波导结构实现正向耦合器。因此,它实现了紧凑性,与衬底集成波导结构相比,大约需要一半的面积,并支持非横向电磁(TEM)功能。非tem环境提供了在sub-GHz频段和毫米波范围内使用无芯片射频识别阅读器的频率发生器的灵活性。在Rogers 3006衬底上对正耦谐振器和频率发生器进行了全波模拟和后续测量,验证了所提出的设计概念。
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引用次数: 0
Field Programmable Gate Array based elliptic curve Menezes-Qu-Vanstone key agreement protocol realization using Physical Unclonable Function and true random number generator primitives 利用物理不可克隆函数和真随机数生成原语实现基于现场可编程门阵列的椭圆曲线menedez - qu - vanstone密钥协议
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2022-02-09 DOI: 10.1049/cds2.12111
N. Nalla Anandakumar, Mohammad S. Hashmi, Somitra Kumar Sanadhya

The trust, authenticity and integrity of Internet-of-Things (IoT) systems are heavily reliant on Physical Unclonable Functions (PUFs) and True random number generators (TRNGs). The PUF and TRNG produce device intrinsic digital signatures and random binary sequences, which are used for cryptographic key generation, key agreement/exchange, device authentication, cloning prevention etc. This article reports an efficient Field Programmable Gate Array (FPGA)-based realization of elliptic curve Menezes-Qu-Vanstone (ECMQV)-authenticated key agreement protocol using PUF and TRNG with very competitive area-throughput trade-offs. The key agreement protocols, which establish a shared secret key between two IoT devices, make use of PUF and TRNG primitives for the long- and short-term secret keys generation while the elliptic curve is employed for public key generated from the corresponding secret key. The performance of the protocol is investigated on FPGAs. The authors' implementation of the ECMQV protocol takes 1.802 ms using 18852 slices on Artix-7 FPGA.

物联网(IoT)系统的信任、真实性和完整性在很大程度上依赖于物理不可克隆功能(puf)和真随机数生成器(trng)。PUF和TRNG生成设备固有数字签名和随机二进制序列,用于加密密钥生成、密钥协议/交换、设备认证、防克隆等。本文报道了一种高效的基于现场可编程门阵列(FPGA)的椭圆曲线Menezes-Qu-Vanstone (ECMQV)认证密钥协议的实现,该协议使用PUF和TRNG,具有非常有竞争力的区域吞吐量权衡。密钥协议在两个物联网设备之间建立共享密钥,使用PUF和TRNG原语生成长期密钥和短期密钥,使用椭圆曲线生成相应密钥生成的公钥。在fpga上研究了该协议的性能。作者在Artix-7 FPGA上使用18852片实现ECMQV协议,耗时1.802 ms。
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引用次数: 5
A high speed processor for elliptic curve cryptography over NIST prime field NIST素数域上椭圆曲线加密的高速处理器
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2022-02-03 DOI: 10.1049/cds2.12110
Xianghong Hu, Xueming Li, Xin Zheng, Yuan Liu, Xiaoming Xiong

Elliptic curve cryptography (ECC), as one of the public key cryptography systems, has been widely applied to many security applications. It is challenging to implement a scalar multiplication (SM) operation which has the highest computational complexity in ECC. In this study, we propose a hardware processor which achieves high speed and high security for ECC. We first present a three-clock cycle, divide-and-conquer multiplication algorithm which greatly reduces the number of execution cycles of multiplication. We then propose a dedicated multiplication hardware structure which reuses the multiplier and optimizes data path delay. To keep multiplication running in non-idle status and executing in parallel with other modular operations, the operation scheduling of point addition and point doubling has been re-designed and optimized based on an effective segmentation and pipeline strategy. Finally, under the premise of similar computing and hardware overhead, we propose an improved high-security SM algorithm which involves random points to resist side-channel attacks. On a 55 nm complementary metal oxide semiconductor application specific integrated circuit platform, the processor costs 463k gates and requires 0.028 ms for one SM. Our results indicate that the ECC processor is superior to other state-of-the-art designs reported in the literature in terms of speed and area-time product metrics.

椭圆曲线加密(ECC)作为一种公钥加密系统,在许多安全领域得到了广泛的应用。在ECC中实现计算复杂度最高的标量乘法运算是一个挑战。在本研究中,我们提出了一种实现ECC高速和高安全性的硬件处理器。我们首先提出了一个三时钟周期的分治乘法算法,它大大减少了乘法的执行周期。然后,我们提出了一个专用的乘法硬件结构,该结构可以重用乘法器并优化数据路径延迟。为了保持乘法运算在非空闲状态下运行,并与其他模块化运算并行执行,基于有效的分段和流水线策略,对点加法和点加倍的运算调度进行了重新设计和优化。最后,在计算和硬件开销相似的前提下,我们提出了一种改进的高安全性SM算法,该算法采用随机点来抵抗侧信道攻击。在55 nm互补金属氧化物半导体应用专用集成电路平台上,该处理器成本为463k个栅极,一个SM需要0.028 ms。我们的研究结果表明,ECC处理器在速度和面积时间产品指标方面优于文献中报道的其他最先进的设计。
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引用次数: 4
A study of harmonic spatial propagation along AC power lines of meshed power systems 网状电力系统交流输电线路谐波空间传播研究
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2022-01-04 DOI: 10.1049/cds2.12107
Chengxi Liu, Zhen Gong, Filipe Faria da Silva, Qiupin Lai, Pan Hu

Severe harmonics propagation in power systems may result in increased power losses and equipment damages. In this paper, an elliptic formula is derived to analyse the harmonic spatial distribution not only at the substations but also along the power lines or cables and to give a system-wide overview of harmonic levels. It is observed that harmonic distortion along power lines can be higher than that at the busbars and the maximum amplitude of harmonic voltage and current denoted as weak positions along power lines depends on the steady-state harmonic angle difference of voltage and current at busbars, the length of power lines, and the harmonic order. All cases are modelled in detail by analytical geometry and analysed in MATLAB. In this regard, a method to identify the weak positions in terms of maximum harmonic levels in a power system is presented, and its corresponding harmonic orders are determined. The accuracy of the model is tested using time-domain simulations in PSCAD/EMTDC.

谐波在电力系统中的传播严重,会导致电力损耗增加和设备损坏。本文推导了一个椭圆公式,不仅分析了变电站的谐波空间分布,而且分析了电力线或电缆的谐波空间分布,并给出了全系统谐波水平的概述。可以看出,沿电力线的谐波畸变可能高于母线处的谐波畸变,谐波电压和电流的最大幅值表示为沿电力线薄弱位置,这取决于母线处电压和电流的稳态谐波角差、电力线的长度和谐波阶数。所有的情况都用解析几何进行了详细的建模,并在MATLAB中进行了分析。为此,提出了一种根据电力系统最大谐波电平识别薄弱位置的方法,并确定了其对应的谐波阶数。在PSCAD/EMTDC中进行时域仿真,验证了模型的准确性。
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引用次数: 1
New full-wave rectifier based on modified voltage differencing transconductance amplifier 基于改进型压差跨导放大器的新型全波整流器
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2021-12-14 DOI: 10.1049/cds2.12106
Predrag B. Petrović

A full-wave rectifier based on a modified voltage differencing transconductance amplifier-MVDTA and four n-MOS transistors (or inverting full-wave rectifier), with no use of any passive elements is proposed in this paper. The proposed design is suitable for a low voltage and high frequency input voltage/current signal. The used MVDTA possesses certain new connections without any changes in the original circuit resources of VDTA. The proposed configuration possesses satisfactory zero crossing performance, excellent linearity, low component count―a simple and compact structure―which makes it an adequate candidate for implementation in the form of IC circuits. The amplitude-waveform of the current/voltage rectified signal at the output of the proposed circuit can be electronically controlled by the applied bias currents. The influence of possible non-ideality and parasitic effects was analysed, while the effects of the parasitic are only marginal due to the absence of any passive elements. To verify the validity of the presented circuits, SPICE simulations deploying 0.18 μm CMOS technology parameters and supply voltage of ±0.9 V are reported, fully consistent with the theoretical predictions. The noise and Monte Carlo analyses were also performed in order to obtain further insight into the robustness of the proposed design. The proposal is also supported by experimental results in order to confirm the workability of the proposed solution.

本文提出了一种基于改进的跨导差分放大器mvdta和四个n-MOS晶体管(或反相全波整流器)的全波整流器,不使用任何无源元件。本设计适用于低压高频输入电压/电流信号。使用后的MVDTA在不改变原有VDTA电路资源的情况下,增加了一些新的连接。所提出的结构具有令人满意的过零性能,良好的线性度,低元件数,结构简单紧凑,使其成为以IC电路形式实现的合适人选。该电路输出端的电流/电压整流信号的幅值波形可以通过施加的偏置电流进行电子控制。分析了可能的非理想效应和寄生效应的影响,而由于没有任何被动元件,寄生效应仅是边际效应。为了验证电路的有效性,采用0.18 μm CMOS工艺参数和±0.9 V电源电压进行SPICE仿真,结果与理论预测完全一致。还进行了噪声和蒙特卡罗分析,以便进一步了解所提出设计的鲁棒性。实验结果验证了该方案的可行性。
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引用次数: 3
Correction of traditional incorrect oscillation formula for the Wien-Bridge Oscillator 修正了传统不正确的维恩桥振子振荡公式
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2021-12-02 DOI: 10.1049/cds2.12103
Chung-Cheng Chen, Yen-Ting Chen

An incorrect mistake that the DC bias resistance cannot change the oscillation frequency exists for the traditional formula of the Wien-Bridge oscillator. From the rigorous hardware experiments and theoretical proofs in this study, the proposed new formula exploits the fact that the oscillation frequency of the Wien-Bridge oscillator is indeed determined by the DC bias resistance. The feedback theory and Barkhausen criterion are often utilised to address the oscillating formula of the Wien-Bridge oscillator for traditional approaches. However, the steps of the feedback theory are complicated, and its severe shortcoming is the utilisation of Kirchhoff's law. The traditional Barkhausen formula is only necessary but not sufficient for the Wien-Bridge oscillator. Hence, the oscillator with a feedback device, which fulfils the Barkhausen criterion does not necessarily oscillate at a frequency and then this fact will make the Barkhausen criterion impractical. This study applies our series research Chen's Electric Unifying Approach to overcome the serious shortcomings of the traditional Barkhausen method and yields a necessary and sufficient oscillation formula for the Wien-Bridge oscillator. Another important feature of our proposed method is that the oscillation condition is effective for a range value, and it can solve the impact caused by the change in environmental factors.

传统的温桥振荡器计算公式存在着直流偏置电阻不能改变振荡频率的错误。从严格的硬件实验和理论证明来看,本文提出的新公式利用了一个事实,即温桥振荡器的振荡频率确实是由直流偏置电阻决定的。传统方法通常采用反馈理论和巴克豪森判据来求解维恩桥振子的振荡公式。然而,反馈理论的步骤复杂,其严重的缺点是利用了基尔霍夫定律。传统的巴克豪森公式对于维恩-桥振子来说只是必要的,而不是充分的。因此,具有满足巴克豪森准则的反馈装置的振荡器不一定在某个频率上振荡,然后这个事实将使巴克豪森准则不切实际。本研究应用我们的系列研究成果Chen的电统一方法克服了传统巴克豪森方法的严重缺陷,得到了维恩桥振荡器的充分必要振荡公式。该方法的另一个重要特点是振荡条件在一定范围内是有效的,可以解决环境因素变化带来的影响。
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引用次数: 0
Circuit analysis of radiation reaction in metamaterials by retarded electromagnetic coupling 超材料中延迟电磁耦合辐射反应电路分析
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2021-11-26 DOI: 10.1049/cds2.12104
Ryoma Nakata, Takashi Hisakado, Tohlu Matsushima, Osami Wada

Because radiation is essential in high-frequency circuits, such as those used in metamaterials and plasmonics, the investigation of radiation loss is important. This study describes the characteristics of radiation loss, which is a radiation reaction in circuits with retarded electromagnetic couplings. The structure of wired metallic spheres is used to demonstrate metamaterial equivalent circuits, where charges and current exist on the spheres and wires, respectively. An inductance matrix and a potential coefficient matrix with retarded electromagnetic couplings are defined to address the radiation reaction. Subsequently, based on the topology of the wires and spheres, an equivalent circuit equation with retardation is formulated to discuss the losses in the resonant circuit caused by the inductive and capacitive elements. Thereafter, the relationship between the resonant frequency and radiation loss caused by the retarded couplings is demonstrated and the difference between the retarded couplings and couplings with transmission lines is clarified. Furthermore, we indicate that retarded coupling generates singularity on a dispersion curve for a one-dimensional array of resonant circuits. Thus, the circuit with retarded couplings generates novel characteristics of radiation reactions that are not represented by the circuit without retardation. This circuit analysis is expected to afford new aspects in studies on topics, such as metamaterials and plasmonics.

由于辐射在高频电路中是必不可少的,例如在超材料和等离子体中使用的电路,因此辐射损耗的研究很重要。本文研究了电磁耦合迟滞电路中的辐射损耗特性。用带线金属球的结构来演示超材料等效电路,其中电荷和电流分别存在于球和线上。定义了具有延迟电磁耦合的电感矩阵和电位系数矩阵来处理辐射反应。然后,根据导线和球体的拓扑结构,建立了考虑延迟的等效电路方程,讨论了电感和电容元件在谐振电路中的损耗。在此基础上,论证了迟滞耦合引起的谐振频率与辐射损耗之间的关系,阐明了迟滞耦合与带传输线耦合的区别。此外,我们指出延迟耦合在一维谐振电路阵列的色散曲线上产生奇点。因此,具有延迟耦合的电路产生了没有延迟电路所不能表示的辐射反应的新特性。这种电路分析有望为诸如超材料和等离子体等课题的研究提供新的方面。
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引用次数: 0
Research on torque feedback equivalent structures in the multi-layer and multi-axis synchronisation control model 多层多轴同步控制模型中的转矩反馈等效结构研究
IF 1.3 4区 工程技术 Q2 Engineering Pub Date : 2021-11-24 DOI: 10.1049/cds2.12105
Jie Xu, Sizhou Sun, Huacai Lu

This paper proposes a novel torque feedback equivalent structure oriented to the diversity of torque feedback in multi-layer and multi-axis complex systems. First, in view of the existing synchronisation control problem, this paper presents master reference synchronous model and master–slave synchronous model in a multi-layer and multi-axis synchronous control system. Second, the change of the direct feedback to front layer axis is lower than that of the direct feedback to master axis, and the adjustment difference of the axis output is low. Moreover, the stability and superiority of the proposed controller are theoretically analysed. By two methods, it can be seen that the control system can converge at a faster speed and run stably with good dynamic performance and synchronisation performance. The results verify the effectiveness of the adaptive control model in which the two equivalent torque feedback structures converge to zero.

针对多层多轴复杂系统中转矩反馈的多样性,提出了一种新的转矩反馈等效结构。首先,针对目前存在的同步控制问题,提出了多层多轴同步控制系统中的主参考同步模型和主从同步模型。二是对前层轴的直接反馈比对主轴的直接反馈变化小,轴输出的调整差小。并从理论上分析了所提控制器的稳定性和优越性。通过两种方法可以看出,控制系统收敛速度更快,运行稳定,具有良好的动态性能和同步性能。结果验证了两个等效转矩反馈结构收敛于零的自适应控制模型的有效性。
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引用次数: 0
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Iet Circuits Devices & Systems
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