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Design and application of multiscroll chaotic attractors based on memristors 基于忆阻器的多卷混沌吸引器的设计与应用
IF 2.2 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-27 DOI: 10.1016/j.vlsi.2024.102235
Jie Zhang, Xiaodong Wei, Jiangang Zuo, Nana Cheng, Jiliang Lv

A multi-segment nonlinear memristor model with controllable parameters is simplified significantly reducing circuit costs without compromising circuit performance. Different quantities of simplified memristor models are introduced into an improved Shimizu and Morioka (S-M) system, which constitute the one-directional memristive multiscroll chaotic attractor (1D-MMSCA) and the two-directional memristive multiscroll chaotic attractor (2D-MMSCA). Dynamical analysis is conducted from equilibrium points, Lyapunov exponents and bifurcation diagrams, Poincaré map, 0–1 tests, complexity, coexisting attractors, and National Institute of Standards and Technology (NIST) test. The Lyapunov exponents and bifurcation diagrams revealed that 1D-MMSCA exhibit rich dynamical behaviors, including fixed points, periodic orbits, transient quasi-periodic cycles, limit cycles, and period-doubling bifurcations. The 2D-MMSCA demonstrates simultaneous homogeneous and heterogeneous multi-stability and extreme multi-stability. Furthermore, an analog circuit is designed and simulated, and the results verify the circuit realizability and correctness of the MMSCAs. By utilizing an improved Euler algorithm and STM32 microcontroller, the implementation of MMSCAs are achieved, enhancing their applicability in the embedded systems domain. Finally, the drive-response synchronization constructed based on 1D-MMSCA exhibits a wide adjustable synchronization time, ranging from 49.3 s to 0.18 s. This significantly expands the application scope of the system. Additionally, a chaotic analog encrypted communication system has been developed using this synchronization framework. These advancements substantially enhance both the efficiency and practicality of the synchronization system.

简化了参数可控的多段非线性忆阻器模型,大大降低了电路成本,同时不影响电路性能。不同数量的简化忆阻器模型被引入改进的清水和盛冈(S-M)系统,构成单向忆阻器多卷混沌吸引子(1D-MMSCA)和双向忆阻器多卷混沌吸引子(2D-MMSCA)。从平衡点、Lyapunov 指数和分岔图、Poincaré 地图、0-1 检验、复杂性、共存吸引子和美国国家标准与技术研究院(NIST)检验等方面进行了动力学分析。李亚普诺夫指数和分岔图显示,一维-MMSCA 表现出丰富的动力学行为,包括定点、周期轨道、瞬态准周期循环、极限循环和周期加倍分岔。2D-MMSCA 同时表现出同质和异质多稳定性以及极端多稳定性。此外,还设计和模拟了模拟电路,结果验证了 MMSCA 的电路可实现性和正确性。通过利用改进的欧拉算法和 STM32 微控制器,实现了 MMSCA,增强了其在嵌入式系统领域的适用性。最后,基于 1D-MMSCA 构建的驱动-响应同步系统的同步时间可调范围很广,从 49.3 秒到 0.18 秒不等。此外,利用这一同步框架还开发出了混沌模拟加密通信系统。这些进步大大提高了同步系统的效率和实用性。
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引用次数: 0
Ultra8T: A sub-threshold 8T SRAM with leakage detection Ultra8T:具有漏电检测功能的亚阈值 8T SRAM
IF 2.2 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-24 DOI: 10.1016/j.vlsi.2024.102233
Shan Shen , Hao Xu , Yongliang Zhou , Ming Ling , Wenjian Yu

In energy-constrained scenarios such as IoT applications, the primary requirement for System-on-Chips (SoCs) is to increase battery life. However, when performing the sub/near-threshold operations, the relatively large leakage current hinders Static Random Access Memory (SRAM) from normal read/write functionalities at the lowest possible voltage (VDDMIN). In this work, we first propose a model that describes a specific relationship between read current and leakage noise in a given column. Based on the model, Ultra8T SRAM is designed to aggressively reduce VDDMIN by using a leakage detection strategy where the safety sensing time on bitlines is quantified without any additional hardware overhead. We validate the proposed Ultra8T using a 256 × 64 array in 28 nm CMOS technology. Post-simulation results show successful read operation at 0.25 V with 1.11 μs read delay, and the minimum energy required is 1.69 pJ at 0.4 V

在物联网应用等能源受限的情况下,系统芯片(SoC)的主要要求是延长电池寿命。然而,在执行亚阈值/近阈值操作时,相对较大的泄漏电流会阻碍静态随机存取存储器(SRAM)在尽可能低的电压(VDDMIN)下实现正常读/写功能。在这项工作中,我们首先提出了一个模型,该模型描述了特定列中读取电流与泄漏噪声之间的特定关系。基于该模型,我们设计了 Ultra8T SRAM,通过使用泄漏检测策略,在不增加任何硬件开销的情况下量化位线上的安全感应时间,从而积极降低 VDDMIN。我们使用 28 纳米 CMOS 技术中的 256 × 64 阵列验证了所提出的 Ultra8T。后仿真结果表明,在 0.25 V 电压下读取操作成功,读取延迟为 1.11 μs,在 0.4 V 电压下所需的最小能量为 1.69 pJ。
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引用次数: 0
FPGA-enhanced system-on-chip for finger vein-based biometric system using novel DL model 使用新型 DL 模型的 FPGA 增强型系统芯片,用于基于手指静脉的生物识别系统
IF 2.2 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-21 DOI: 10.1016/j.vlsi.2024.102231
Janaki K , Srinivasan C , Hema Malini A

In an era dominated by technology, the imperative for robust personal authentication in electronic information systems becomes increasingly evident. A secure and dependable solution to address this need is biometric authentication. Due to their intrinsic features of being universal, unique, and fraud-resistant, finger vein-based recognition systems have gained importance. Veins provide an efficient barrier against misleading methods since they are buried under the skin and undetectable to human sight. While many researchers focus on advanced technology for finger-vein-based authentication systems, existing research has often overlooked significant challenges, such as short datasets, high computational complexity, and a lack of efficient and lightweight feature descriptors. This paper proposes a unique method for automated Finger Vein Recognition (FVR) based on a fusion model known as “CNN-ViT” for FVR. Transfer learning-based Convolutional Neural Network (CNN) models, such as Inception-V3 and ResNet-50, compute the correlation of adjacent pixels to process texture-based features. Furthermore, shape-based features are processed using the vision transformer (ViT) model to determine the relationship between distant pixels. The combination of these three models enables the learning of textural features based on forms, contributing to more effective finger vein identification. In addition to our databases, we utilize two benchmark databases, FV-USM and SDUMLA-HMT, to validate our experiments. Our proposed approach achieves outstanding accuracy values of 99.95 %, 98.9 %, and 97.78 % on both the benchmark and our datasets. When compared to previous methods, the proposed Deep Learning (DL) model outperforms state-of-the-art models, demonstrating higher recognition rates and accuracy. To prototype the proposed FVR system, a Zynq XCZU4EV UltraScale + Multiprocessor System-On-Chip (MPSoC) was employed. The proposed model exhibits high throughput and competitive power efficiency, making it an excellent choice for scenarios where computing performance is critical, albeit utilizing more power and resources. This was established through a comprehensive examination of FPGA resource utilization and performance metrics.

在这个由技术主导的时代,电子信息系统中强大的个人身份认证变得越来越明显。生物识别身份验证是满足这一需求的安全可靠的解决方案。基于手指静脉的识别系统具有通用性、唯一性和抗欺诈性等固有特点,因此越来越受到重视。静脉埋藏在皮肤下,人的肉眼无法察觉,因此能有效防止误导。虽然许多研究人员专注于基于指静脉的身份验证系统的先进技术,但现有研究往往忽视了一些重大挑战,如数据集短、计算复杂度高、缺乏高效轻量级特征描述符等。本文提出了一种基于 "CNN-ViT "融合模型的独特的手指静脉自动识别(FVR)方法。基于迁移学习的卷积神经网络(CNN)模型,如 Inception-V3 和 ResNet-50,通过计算相邻像素的相关性来处理基于纹理的特征。此外,还使用视觉变换器(ViT)模型处理基于形状的特征,以确定远处像素之间的关系。这三种模型的结合可以学习基于形状的纹理特征,从而更有效地识别手指静脉。除了我们的数据库外,我们还利用了两个基准数据库 FV-USM 和 SDUMLA-HMT 来验证我们的实验。我们提出的方法在基准数据库和我们的数据集上分别达到了 99.95 %、98.9 % 和 97.78 % 的出色准确率。与以前的方法相比,所提出的深度学习(DL)模型优于最先进的模型,表现出更高的识别率和准确率。为了对所提出的 FVR 系统进行原型开发,我们采用了 Zynq XCZU4EV UltraScale + 多处理器片上系统(MPSoC)。所提出的模型具有高吞吐量和极具竞争力的能效,使其成为对计算性能要求极高的应用场景的绝佳选择,尽管需要使用更多的电力和资源。这一点是通过对 FPGA 资源利用率和性能指标的全面检查确定的。
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引用次数: 0
Design of A prototype 128 × 128 ROIC array for 2.6 μm-wavelength SWIR image sensor applications 设计用于 2.6 μm 波长 SWIR 图像传感器应用的 128 × 128 ROIC 阵列原型
IF 2.2 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-15 DOI: 10.1016/j.vlsi.2024.102232
Hyeon-June Kim

This paper presents the development and evaluation of a 128 × 128 Readout Integrated Circuit (ROIC) prototype, engineered for Short-Wave Infrared (SWIR) imaging at a specific target wavelength of 2.6 μm. Employing silicon-level verification, this work undertook an exhaustive analysis of the ROIC's performance, identifying key areas for enhancement to improve SWIR imaging systems. Fabricated with 0.18-μm CMOS technology, the ROIC is tailored for integration with Indium Gallium Arsenide (InGaAs) Focal Plane Arrays (FPAs), facilitating high-resolution imaging. The prototype consumes 42.25 mW of power and achieves a frame rate of 390 frames per second. The fabricated chip show that the random noise level is 72.65 μVrms and Pixel-FPN is 21 LSBrms. This investigation lays a critical groundwork for future SWIR imaging advancements, providing valuable insights and methodologies to boost imaging performance in various applications.

本文介绍了 128 × 128 读出集成电路 (ROIC) 原型的开发和评估情况,该原型专为 2.6 μm 特定目标波长的短波红外 (SWIR) 成像而设计。通过硅级验证,这项工作对 ROIC 的性能进行了详尽的分析,确定了改进 SWIR 成像系统的关键改进领域。ROIC 采用 0.18-μm CMOS 技术制造,专为与砷化镓铟(InGaAs)焦平面阵列(FPA)集成而定制,有助于实现高分辨率成像。原型的功耗为 42.25 mW,帧频为每秒 390 帧。制造的芯片显示,随机噪声水平为 72.65 μVrms,像素-FPN 为 21 LSBrms。这项研究为未来的 SWIR 成像技术进步奠定了重要基础,为提高各种应用中的成像性能提供了宝贵的见解和方法。
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引用次数: 0
2×VDD IO buffer with 1×VDD devices considering hot-carrier and gate-oxide reliability issues 2×VDD IO 缓冲器,带有 <mml:math xmlns:mml="http://www.w3.org/19
IF 2.2 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-14 DOI: 10.1016/j.vlsi.2024.102230
Dharmaray Nedalgi , Saroja V. Siddamal , S.S. Kerur

This paper presents circuit for 2×VDD signaling I/O buffer to solve the gate-oxide and hot-carrier reliability issues without consuming any active static power. The design is verified for a range of loads varying from 4 pF to 200 pF with operating speed ranging from 12 Mbps to 500 Mbps. The proposed circuit is implemented in 16 nm FinFET technology using 1.8 V thick gate devices. The design can be used in any CMOS technology for 2×VDD signaling I/O buffer to reduce hot-carrier effect and to avoid gate-oxide reliability issues.

本文介绍了 2×VDD 信号 I/O 缓冲器电路,以解决栅极氧化和热载波可靠性问题,而无需消耗任何有源静态功率。该设计在 4 pF 至 200 pF 的负载范围内进行了验证,工作速度为 12 Mbps 至 500 Mbps。该电路采用 16 纳米 FinFET 技术,使用 1.8 V 厚栅极器件实现。该设计可用于任何 CMOS 技术的 2×VDD 信号 I/O 缓冲器,以减少热载波效应,避免栅极氧化物的可靠性问题。
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引用次数: 0
A pseudo resistor with temperature self-adaptive scheme 具有温度自适应方案的伪电阻器
IF 1.9 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-08 DOI: 10.1016/j.vlsi.2024.102229
Aliaa Mohamed Salem , Ahmed Wahba , Hesham F.A. Hamed , Ahmed Reda Mohamed

A temperature self-adaptive ultra-high-resistance pseudo-resistor (PR) circuit is proposed for a wide range of biomedical applications. It acts as a relatively constant resistor over a wide temperature range (−40 °C–85 °C) due to its potential to compensate for the impact of the temperature-induced current. Hence, the performance of many biomedical analog intellectual property (IP) circuits can be effectively improved with temperature variations. The proposed circuit consists of a gate-voltage-controlled pseudo-resistor and a proportional-to- absolute-temperature (PTAT) circuit. Besides, its analysis and proof of concept with the self-adaptive scheme are presented. The circuit is designed in standard 0.18 μm CMOS technology and occupies a silicon area of 18.5 × 43.7 μm2. It consumes 12 nW with a single power supply of 1.8 V. The post-layout simulation results demonstrate that the proposed pseudo-resistor could adequately improve the temperature-induced resistance variation by up to 18X while consuming ultra-low power and providing relatively high-temperature independence compared to the prior art.

本文提出了一种温度自适应超高阻伪电阻(PR)电路,可广泛应用于生物医学领域。由于它具有补偿温度引起的电流影响的潜力,因此在较宽的温度范围(-40 ℃-85 ℃)内可充当相对恒定的电阻器。因此,许多生物医学模拟知识产权 (IP) 电路的性能可随温度变化而得到有效改善。所提出的电路由一个栅压控制伪电阻和一个绝对温度比例(PTAT)电路组成。此外,还介绍了对自适应方案的分析和概念验证。电路采用标准 0.18 μm CMOS 技术设计,硅面积为 18.5 × 43.7 μm2。布局后仿真结果表明,与现有技术相比,所提出的伪电阻器可将温度引起的电阻变化充分改善达 18 倍,同时具有超低功耗和相对的高温独立性。
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引用次数: 0
Physical design for microfluidic biochips considering actual volume management and channel storage 考虑实际体积管理和通道存储的微流控生物芯片物理设计
IF 1.9 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-07 DOI: 10.1016/j.vlsi.2024.102228
Genggeng Liu , Zhengyang Chen , Zhisheng Chen , Bowen Liu , Yu Zhang , Xing Huang

In recent years, microfluidic biochips have been widely applied in various fields of human society. The optimization design of system-architecture based on continuous-flow microfluidic biochips has been widely studied. However, most previous work was based on the traditional chip architecture with dedicated storage, which not only limits the performance of biochips but also increases their manufacturing costs. In order to improve the execution efficiency and reduce the manufacturing cost, a distributed channel-storage architecture can be used to temporarily cache intermediate fluids in idle flow channels. Under this architecture, careful consideration of the volume management of the fluid to be cached is a prerequisite for ensuring the reliability of bioassay results. However, the existing work has not considered the volume management of the fluid to be cached in detail. This may cause the volume of the fluid to not match the capacity of the storage channel, which can contaminate other fluids and lead to incorrect bioassay results or increase the manufacturing cost of biochips due to long storage channels. In this paper, we propose a physical design method for microfluidic biochips that considers the actual volume of fluid while utilizing distributed channel storage. We address this problem by taking a placement and routing co-design strategy throughout the iterative process of the simulated annealing algorithm. Experimental results under multiple benchmarks show that the proposed method can effectively reduce the completion time of bioassays, minimize the flow path length, and decrease the number of intersections.

近年来,微流控生物芯片已广泛应用于人类社会的各个领域。基于连续流微流控生物芯片的系统架构优化设计已被广泛研究。然而,以往的工作大多基于专用存储的传统芯片架构,这不仅限制了生物芯片的性能,还增加了其制造成本。为了提高执行效率并降低制造成本,可以采用分布式通道存储架构,在空闲的流动通道中临时缓存中间流体。在这种架构下,仔细考虑缓存液体的体积管理是确保生物测定结果可靠性的前提。然而,现有工作并未详细考虑待缓存流体的体积管理问题。这可能会导致液体体积与存储通道的容量不匹配,从而污染其他液体,导致生物测定结果错误,或因存储通道过长而增加生物芯片的制造成本。在本文中,我们提出了一种微流控生物芯片的物理设计方法,该方法在利用分布式通道存储的同时考虑了流体的实际体积。我们通过在模拟退火算法的整个迭代过程中采取放置和路由协同设计策略来解决这一问题。多种基准下的实验结果表明,所提出的方法能有效缩短生物测定的完成时间,最大限度地减少流路长度和交叉点数量。
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引用次数: 0
High-perfoprmance and low-power decoder circuits for SRAMs using mixed-logic scheme 采用混合逻辑方案的 SRAM 高性能、低功耗解码器电路
IF 1.9 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-06 DOI: 10.1016/j.vlsi.2024.102227
Donghao Xia , Yuejun Zhang , Yuanxin Tian , Mengfan Xu , Liang Wen

A mixed-logic design scheme utilizing pass-transistor logic (PTL) and dual-value logic (DVL) in combination with static CMOS logic for decoders in SRAMs is proposed. By using of the mixed-logic circuit, new n-Transistor (T) NAND/AND structures were provided for decoders, while achieving fewer transistors, faster speed, lower power dissipation as compared to traditional circuits, and having full-swing capability and good noise immunity. Experiments were conducted using TSMC 28 nm process for mixed-logic decoders, and the results show the superiority in terms of propagation delay and power dissipation, compared to the conventional corresponding circuits. A mixed-logic 2-4 decoder exhibits 36 % reduction in propagation delay and 10 % improvement in power dissipation; A mixed-logic 3-8 decoder exhibits 27 % reduction in propagation delay and 5.5 % improvement in power dissipation; While, A mixed-logic 4-16 decoder exhibits 30 % reduction in propagation delay and 5 % improvement in power dissipation; As well, A mixed-logic 5-32 decoder exhibits 34 % reduction in propagation delay and 6.3 % improvement in power dissipation.

针对 SRAM 中的解码器,我们提出了一种混合逻辑设计方案,它将通过晶体管逻辑(PTL)和双值逻辑(DVL)与静态 CMOS 逻辑相结合。通过使用混合逻辑电路,为解码器提供了新的 n 晶体管 (T) NAND/AND 结构,与传统电路相比,晶体管数量更少,速度更快,功耗更低,并且具有全摆幅能力和良好的抗噪能力。使用台积电 28 纳米工艺对混合逻辑解码器进行了实验,结果表明与传统相应电路相比,混合逻辑解码器在传播延迟和功耗方面更具优势。混合逻辑 2-4 解码器的传播延迟减少了 36%,功耗降低了 10%;混合逻辑 3-8 解码器的传播延迟减少了 27%,功耗降低了 5.5%;混合逻辑 4-16 解码器的传播延迟减少了 30%,功耗降低了 5%;混合逻辑 5-32 解码器的传播延迟减少了 34%,功耗降低了 6.3%。
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引用次数: 0
Development and validation of a 64-channel ROIC prototype for SWIR line scan sensor applications 开发和验证用于 SWIR 线扫描传感器应用的 64 通道 ROIC 原型机
IF 1.9 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-06 DOI: 10.1016/j.vlsi.2024.102226
Hyeon-June Kim, Dong-Yeon Lee, Min-Jun Park

This paper introduces the development and validation of a 64-channel readout integrated circuit (ROIC) prototype, specifically engineered for short-wave infrared (SWIR) line scan sensors. The design of the prototype undergoes various evaluation through comprehensive silicon-level testing, ensuring its robust performance across a variety of operational modes. Key features such as capacitive transimpedance amplifier (CTIA) gain control and sensitivity control are examined, demonstrating the prototype's ability to handle different input currents and capacitance values with precision. Fabricated with 0.18-μm CMOS technology, the ROIC is tailored for integration with Indium Gallium Arsenide (InGaAs) pixels, facilitating high-resolution imaging. The prototype consumes 26.55 mW with A 3.3 V power supply. The fabricated chip show that the total random noise (RN) level is 128 μVrms and column fixed pattern noise (FPN) is 0.16 mVrms

本文介绍了专为短波红外(SWIR)线扫描传感器设计的 64 通道读出集成电路(ROIC)原型的开发和验证。通过全面的硅级测试,对原型设计进行了各种评估,确保其在各种工作模式下都能保持稳定的性能。对电容式互阻抗放大器 (CTIA) 增益控制和灵敏度控制等关键功能进行了检查,证明原型能够精确地处理不同的输入电流和电容值。ROIC 采用 0.18μm CMOS 技术制造,专为集成砷化镓铟(InGaAs)像素而定制,有助于实现高分辨率成像。原型芯片在使用 3.3 V 电源时的功耗为 26.55 mW。制造的芯片显示,总随机噪声(RN)水平为 128 μVrms,列固定模式噪声(FPN)为 0.16 mVrms。
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引用次数: 0
A 10T SRAM architecture with 40 % enhanced throughput for IMC applications benchmarked with CIFAR-10 dataset 针对 IMC 应用的 10T SRAM 架构,通过 CIFAR-10 数据集进行基准测试,吞吐量提高了 40
IF 1.9 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE Pub Date : 2024-06-05 DOI: 10.1016/j.vlsi.2024.102225
Ravi S. Siddanath, Mohit Gupta, Chaitanya Joshi, Manish Goswami, Kavindra Kandpal

This research paper introduces a memory architecture that handles standard memory storage operations and enables in-memory computations, surpassing the capabilities of conventional SRAM bit-cells. The proposed architecture in this work effectively eliminates read-disturb issues and facilitates bit-wise operations like NAND, NOR, and XNOR, all without requiring intricate analog peripheral circuits. The suggested bit-cell architecture offers enhanced throughput compared to existing In-Memory Computing (IMC) bit-cell architectures, making it a more suitable design for IMC applications. Parallelism offers enhanced throughput due to the unique bit-cell architecture, which allows all the bit-wise operations to be achieved simultaneously in a single cycle. The validity of the suggested architecture has been confirmed through Monte-Carlo variation analysis, utilizing UMC 28 nm PDK transistor models to ensure its robustness. Furthermore, architecture is benchmarked using the CIFAR-10 dataset, which entails assessing its performance across various machine learning models via the NeuroSim Simulator. The proposed architecture offers a substantial increase of up to 40 % in throughput (TOPS/W) compared to the existing architectures. Utilizing accurate Monte-Carlo simulations with 1000 samples, the stability of the proposed 10T bit-cell is validated at worst-case PVT corners, up to 6σ variations.

本研究论文介绍了一种内存架构,它能处理标准内存存储操作,并实现内存计算,超越了传统 SRAM 位元组的能力。本文提出的架构有效地消除了读取干扰问题,方便了 NAND、NOR 和 XNOR 等位运算,而且无需复杂的模拟外围电路。与现有的内存计算(IMC)位元架构相比,建议的位元架构可提供更高的吞吐量,使其成为更适合 IMC 应用的设计。由于独特的位元架构允许在一个周期内同时完成所有的位操作,因此并行性提高了吞吐量。利用联电 28 纳米 PDK 晶体管模型,通过蒙特卡洛变化分析确认了建议架构的有效性,以确保其稳健性。此外,还利用 CIFAR-10 数据集对架构进行了基准测试,通过 NeuroSim 模拟器评估了各种机器学习模型的性能。与现有架构相比,拟议架构的吞吐量(TOPS/W)大幅提高了 40%。利用精确的 Monte-Carlo 模拟(1000 个样本),在最坏情况下的 PVT 角(变化率高达 6σ)验证了所提出的 10T 位元的稳定性。
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引用次数: 0
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