In this paper, we provide the first thorough analysis of LSI circuits implemented using sub 10-nm carbon nanotube field effect transistors (CNFETs). Unlike many previous studies in which researchers performed the analysis of CNFET circuits at the SPICE level, we focus on netlists placed and routed using the state-of-the-art CNFET cell libraries. This approach enables us to analyze a more complex and wider range of CNFET circuits (i.e., various architectures that have the same functionality) than researchers in previous studies, while considering various effects of the circuits’ physical layout. Our experimental results demonstrate that, under comparable technology nodes, circuits implemented with CNFET technology can achieve superior performance compared to state-of-the-art 3-nm FinFET technology, exhibiting an energy-delay product (EDP) improvement of up to over 23 for 64-bit Parallel Prefix Adders (PPAs) and up to over 18 for 32-bit Matrix Multiply Units (MMUs). In addition, our analysis shows that the impact of both local and global wires on delay and energy consumption is more substantial in CNFET circuits than in FinFET circuits, and wire savings, which could lead to an EDP improvement of up to 49% in large-scale CNFET circuits, are therefore crucial for the optimization of the EDP of CNFET circuits, even with considering process variations. This study opens up a new opportunity to develop a wire-aware design for CNFET circuits.
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