Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117290
H. Hsu, Yuanyuan Wan, C. Haung, S. Fu
In the present paper, the intermetallic compound (IMC) thickness as a function of annealing temperature has been carefully investigated. It is observed that the IMC ingredients along the Sn3.5Ag0.5Cu (SAC305) solder on the Cu-Ni-Ag substrate are (Ni, Cu)3Sn4 and (Cu, Ni)6Sn5 after IR-reflow process. Based on the measurement of IMC thickness and ball shear force, the following conclusions have been discovered, (1) the composition of IMC unchanged if the annealing temperature below 400°C, (2) interface controlled reaction depends on the annealing temperature and demonstrates the IMC thickness decreases as the heat-up rate increased, (3) Preliminary results demonstrated that the measured ball shear force slightly changed for all different IMC thicknesses ((Ni, Cu)3Sn4 and (Cu, Ni)6Sn5).
{"title":"An investigation of temperature influence on the SAC305 soldering on Cu-Ni-Au substrate","authors":"H. Hsu, Yuanyuan Wan, C. Haung, S. Fu","doi":"10.1109/IMPACT.2011.6117290","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117290","url":null,"abstract":"In the present paper, the intermetallic compound (IMC) thickness as a function of annealing temperature has been carefully investigated. It is observed that the IMC ingredients along the Sn3.5Ag0.5Cu (SAC305) solder on the Cu-Ni-Ag substrate are (Ni, Cu)<inf>3</inf>Sn<inf>4</inf> and (Cu, Ni)<inf>6</inf>Sn<inf>5</inf> after IR-reflow process. Based on the measurement of IMC thickness and ball shear force, the following conclusions have been discovered, (1) the composition of IMC unchanged if the annealing temperature below 400°C, (2) interface controlled reaction depends on the annealing temperature and demonstrates the IMC thickness decreases as the heat-up rate increased, (3) Preliminary results demonstrated that the measured ball shear force slightly changed for all different IMC thicknesses ((Ni, Cu)<inf>3</inf>Sn<inf>4</inf> and (Cu, Ni)<inf>6</inf>Sn<inf>5</inf>).","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"136 1","pages":"173-176"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75048420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117279
Chung-Yen Hsu, Sheng-Liang Li, Chun-Kai Liu, R. Tain, H. Chien, S. Hsu, C. Tzeng, M. Dai, H. Chu, Jenn-dong Hwang
An electrical compressor technique of thermoelectric (TE) based climate control system in passenger vehicles provides solid state design and construction, non-refrigerants and the ability of providing faster time to comfort, beltless solution that enables engine-off air conditioner operation and modified the adversely impact by belt-driven vapor compression air conditioners, improved efficiency of positive temperature coefficient (PTC) heater systems. A complete scale TE air conditioning module was designed and adjusted to appropriate performance with CAE analyzing approaches, the well designed module proceeded practically constructed and tested on vehicle system to validate the design concept. In the design, system integration and energy management algorithms have been improved to further increase system level efficiency. To analyze the COP and cooling ability of the TE vehicle cooling system, a mathematical model is proposed, and a robust control algorithm is applied. The test results are presented and discussed.
{"title":"Non-refrigerant thermoelectric air conditioning technique on vehicles","authors":"Chung-Yen Hsu, Sheng-Liang Li, Chun-Kai Liu, R. Tain, H. Chien, S. Hsu, C. Tzeng, M. Dai, H. Chu, Jenn-dong Hwang","doi":"10.1109/IMPACT.2011.6117279","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117279","url":null,"abstract":"An electrical compressor technique of thermoelectric (TE) based climate control system in passenger vehicles provides solid state design and construction, non-refrigerants and the ability of providing faster time to comfort, beltless solution that enables engine-off air conditioner operation and modified the adversely impact by belt-driven vapor compression air conditioners, improved efficiency of positive temperature coefficient (PTC) heater systems. A complete scale TE air conditioning module was designed and adjusted to appropriate performance with CAE analyzing approaches, the well designed module proceeded practically constructed and tested on vehicle system to validate the design concept. In the design, system integration and energy management algorithms have been improved to further increase system level efficiency. To analyze the COP and cooling ability of the TE vehicle cooling system, a mathematical model is proposed, and a robust control algorithm is applied. The test results are presented and discussed.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"17 1","pages":"257-260"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74447056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117218
M. Hsieh, Chien-Chen Lee, Li Chiun Hung, V. Wang, Harry Perng
The copper pillar with lead-free solder cap bump (Cu w/i LF bump) is found to perform the characteristic of fine pith bump in flip chip technology, lots of dissections for the effects of package geometry and materials are widely investigated in recently years. For the purpose of realizing the mechanical behaviors for the fcFBGA (flip chip fine pitch BGA) with lead-free bump (LF bump), copper pillar without lead-free solder cap bump (Cu w/o LF bump) and Cu w/i LF bump, the three-dimensional finite element analysis (FEA) modeling has been adopted to compare the warpage and stress responses in fcFBGA with these different types of bumps. The simulation results are employed to validate the ICOS experimental results for the fcFBGA. Various parametric discussions for the structural and material effects in fcFBGA such as polyimide (PI) opening size, under bump metallurgy (UBM) size, solder resistant opening (SRO) size as well as Cu pillar height are carried out by using FEA modeling. Because the material properties of underfill and molding compound are usually the key factors to affect the warpage and stresses, for reducing the warpage and stresses in fcFBGA with Cu w/i LF bump, several underfills and molding compounds are selected to study the corresponding mechanical behaviors. The proposed results will be helpful not only for reducing warpage but also for keeping off the critical stresses in fcFBGA with Cu w/i LF bump. It is believed that the results will be useful as the design guidelines if warpage and stress solutions in fcFBGA are required.
{"title":"Parametric study for warpage and stress reduction of variable bump types in fcFBGA","authors":"M. Hsieh, Chien-Chen Lee, Li Chiun Hung, V. Wang, Harry Perng","doi":"10.1109/IMPACT.2011.6117218","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117218","url":null,"abstract":"The copper pillar with lead-free solder cap bump (Cu w/i LF bump) is found to perform the characteristic of fine pith bump in flip chip technology, lots of dissections for the effects of package geometry and materials are widely investigated in recently years. For the purpose of realizing the mechanical behaviors for the fcFBGA (flip chip fine pitch BGA) with lead-free bump (LF bump), copper pillar without lead-free solder cap bump (Cu w/o LF bump) and Cu w/i LF bump, the three-dimensional finite element analysis (FEA) modeling has been adopted to compare the warpage and stress responses in fcFBGA with these different types of bumps. The simulation results are employed to validate the ICOS experimental results for the fcFBGA. Various parametric discussions for the structural and material effects in fcFBGA such as polyimide (PI) opening size, under bump metallurgy (UBM) size, solder resistant opening (SRO) size as well as Cu pillar height are carried out by using FEA modeling. Because the material properties of underfill and molding compound are usually the key factors to affect the warpage and stresses, for reducing the warpage and stresses in fcFBGA with Cu w/i LF bump, several underfills and molding compounds are selected to study the corresponding mechanical behaviors. The proposed results will be helpful not only for reducing warpage but also for keeping off the critical stresses in fcFBGA with Cu w/i LF bump. It is believed that the results will be useful as the design guidelines if warpage and stress solutions in fcFBGA are required.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"62 1","pages":"115-118"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91503901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117242
B. Lin, T. Gregorich
Overview Current solder-based flip chip technology is limited in interconnect density because bump height and bump pitch have a fixed aspect ratio and cannot be sufficiently reduced due to manufacturing requirements such as coplanarity and underfill. As semiconductor dice are reduced in size as a result of wafer node-shrink, designs might become bump-limited unless bump pitch can be reduced proportionately. In addition, methodologies are needed to reduce the cost of flip chip designs, even if the designs are not pad-limited.
{"title":"Design and characterization of a copper-pillar flip chip test vehicle for small form-factor packages using 28nm ELK die and bump-on-trace (BOT)","authors":"B. Lin, T. Gregorich","doi":"10.1109/IMPACT.2011.6117242","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117242","url":null,"abstract":"Overview Current solder-based flip chip technology is limited in interconnect density because bump height and bump pitch have a fixed aspect ratio and cannot be sufficiently reduced due to manufacturing requirements such as coplanarity and underfill. As semiconductor dice are reduced in size as a result of wafer node-shrink, designs might become bump-limited unless bump pitch can be reduced proportionately. In addition, methodologies are needed to reduce the cost of flip chip designs, even if the designs are not pad-limited.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"621 2","pages":"218-221"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91445058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117221
Chung-Hao Tsai, Hung-Chuan Chen, Tzong-Lin Wu
A broadband and miniaturized balun is proposed on low temperature co-fired ceramic (LTCC) substrate using the artificial coupled line with strong even-mode suppression. The artificial coupled line represents as a metamaterial transmission line for the even mode excitation, whereas it behaves like a TEM transmission line with approximately constant characteristic impedance for the odd mode excitation. Based on the artificial coupled line, a wide stopband for common mode is presented to design a balun on system in package (SiP). This balun is realized using LTCC fabrication technology, simulated by a full wave tool, and measured in a three-port VNA system. It exhibits a good amplitude imbalance of 0.3 dB and a phase imbalance of 179° ± 3° with the return loss greater than 10 dB from 3.3 to 7.1 GHz with 73% of FBW. Its electrical size is only 0.063 × 0.44 λg2 and its physical size is 1.6 × 11.2 mm2. It is a good candidate for a passive balun integrated to SiP systems due to its compact size with broadband operation.
{"title":"A broadband and miniaturized balun on system-in-package (SiP) technology","authors":"Chung-Hao Tsai, Hung-Chuan Chen, Tzong-Lin Wu","doi":"10.1109/IMPACT.2011.6117221","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117221","url":null,"abstract":"A broadband and miniaturized balun is proposed on low temperature co-fired ceramic (LTCC) substrate using the artificial coupled line with strong even-mode suppression. The artificial coupled line represents as a metamaterial transmission line for the even mode excitation, whereas it behaves like a TEM transmission line with approximately constant characteristic impedance for the odd mode excitation. Based on the artificial coupled line, a wide stopband for common mode is presented to design a balun on system in package (SiP). This balun is realized using LTCC fabrication technology, simulated by a full wave tool, and measured in a three-port VNA system. It exhibits a good amplitude imbalance of 0.3 dB and a phase imbalance of 179° ± 3° with the return loss greater than 10 dB from 3.3 to 7.1 GHz with 73% of FBW. Its electrical size is only 0.063 × 0.44 λg2 and its physical size is 1.6 × 11.2 mm2. It is a good candidate for a passive balun integrated to SiP systems due to its compact size with broadband operation.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"90 1","pages":"103-106"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90948848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117285
Ching-Yuan Kao, Mei-Ling Wu
The global model uncertainty analysis is to estimate the error due to input data approximations rather than sensitivities associated with finite element modeling. In this paper, estimates will be made on the amount of sensitivity in the global modeling which basically involves the sensitivity in the value of the material properties, input loadings, and geometries. Assume the model structure is corrected, how do we estimate a physics of failure (PoF) and predict time to failure or cycle to failure? Identifying an approach for quantifying the combination of input and uncertainty would enable the determination of more realistic confidence limits on Physics of Failure (PoF) predictions. The physics-of-failure (PoF) approach to reliability utilizes knowledge of the life-cycle load (thermal, vibration, mechanical, electrical, photonics, and so on) profile package architecture and material properties to identify potential failure mechanisms and to prevent operational failures through robust design and manufacturing practices. We can decompose the elements of any mathematical model into the physical parameters used in forming equations, such as material properties or geometric dimensions and the model structure, which results from simplifications, assumptions and approximations. Variability in the physical parameters can be addressed by existing stochastic methods, which are designed to propagate probability distributions on the parameters through a fixed model structure in order to estimate the statistics of interest on the model response quantities.
{"title":"Global uncertainty analysis of solder joint fatigue life model in random vibration environment","authors":"Ching-Yuan Kao, Mei-Ling Wu","doi":"10.1109/IMPACT.2011.6117285","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117285","url":null,"abstract":"The global model uncertainty analysis is to estimate the error due to input data approximations rather than sensitivities associated with finite element modeling. In this paper, estimates will be made on the amount of sensitivity in the global modeling which basically involves the sensitivity in the value of the material properties, input loadings, and geometries. Assume the model structure is corrected, how do we estimate a physics of failure (PoF) and predict time to failure or cycle to failure? Identifying an approach for quantifying the combination of input and uncertainty would enable the determination of more realistic confidence limits on Physics of Failure (PoF) predictions. The physics-of-failure (PoF) approach to reliability utilizes knowledge of the life-cycle load (thermal, vibration, mechanical, electrical, photonics, and so on) profile package architecture and material properties to identify potential failure mechanisms and to prevent operational failures through robust design and manufacturing practices. We can decompose the elements of any mathematical model into the physical parameters used in forming equations, such as material properties or geometric dimensions and the model structure, which results from simplifications, assumptions and approximations. Variability in the physical parameters can be addressed by existing stochastic methods, which are designed to propagate probability distributions on the parameters through a fixed model structure in order to estimate the statistics of interest on the model response quantities.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"38 1","pages":"482-484"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81302638","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117164
T. Lee, C. Breach, W. Chong
The replacement of gold with copper bonding wire has taken a prominent position in the microelectronics packaging industry in recent years. This is largely driven by the increase of gold prices. The hardness, oxidation and electro-chemical potential of copper properties have a significant impact of its wire bonding process and reliability as compared to gold. This paper focuses on the relationship of Au and Cu material properties to wirebonding processes. A higher ultrasonic energy was needed for Cu than Au bonding and this resulted in pad cratering for Cu wire after thermal aging. A drop in stitch strength was observed due to oxidation under thermal aging condition. The resilient of corrosion for Au and Cu wire in moisture, DI water and NaCl conditions were also investigated. The IMC ball coverage appears to have an impact to initiate corrosion with the ingress of electrolyte. For Cu, the galvanic corrosion was suspected for the moisture and DI water soaking with additional pitting corrosion for NaCl condition. This paper provides a good initiation point for further investigation into the mechanisms of corrosion for Cu bonding. The paper summarises the effect of Au and Cu wires in wirebonding process and its reliability relating to its material properties.
{"title":"Comparsion of Au/Al and Cu/Al in wirebonding assembly and reliability","authors":"T. Lee, C. Breach, W. Chong","doi":"10.1109/IMPACT.2011.6117164","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117164","url":null,"abstract":"The replacement of gold with copper bonding wire has taken a prominent position in the microelectronics packaging industry in recent years. This is largely driven by the increase of gold prices. The hardness, oxidation and electro-chemical potential of copper properties have a significant impact of its wire bonding process and reliability as compared to gold. This paper focuses on the relationship of Au and Cu material properties to wirebonding processes. A higher ultrasonic energy was needed for Cu than Au bonding and this resulted in pad cratering for Cu wire after thermal aging. A drop in stitch strength was observed due to oxidation under thermal aging condition. The resilient of corrosion for Au and Cu wire in moisture, DI water and NaCl conditions were also investigated. The IMC ball coverage appears to have an impact to initiate corrosion with the ingress of electrolyte. For Cu, the galvanic corrosion was suspected for the moisture and DI water soaking with additional pitting corrosion for NaCl condition. This paper provides a good initiation point for further investigation into the mechanisms of corrosion for Cu bonding. The paper summarises the effect of Au and Cu wires in wirebonding process and its reliability relating to its material properties.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"11 1","pages":"234-237"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88912624","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Various approaches of high throughput bonding processes were investigated in the micro-bump-bonded processes for 3DIC stacking. The two-step bonding methods, TCB + reflow, TCB + post-bonding and conventional flip-chip process were evaluated in this study. Moreover, the two-step process with different TCB process times (1s, 3s and 5 s) were implemented into the first step. The partial melted joints, which were attained by TCB process, were expected to be fully bonded by the second step (reflow or post-bonding). Then, the temperature cycling test (TCT) was performed to verify reliability performance of the micro-bump-bonded interconnects. Based on the experimental and reliability results, the optimized conditions for the two-step bonding methods and a cost effective solution for the applications of 3DIC stacking can be established.
{"title":"Development of micro-bump-bonded processes for 3DIC stacking with high throughput","authors":"J. Juang, Su-Tsai Lu, Su-Ching Chung, Su-Mei Cheng, Yu-lan Lu, Jon-Shiou Peng, Tai-Hong Chen","doi":"10.1109/IMPACT.2011.6117238","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117238","url":null,"abstract":"Various approaches of high throughput bonding processes were investigated in the micro-bump-bonded processes for 3DIC stacking. The two-step bonding methods, TCB + reflow, TCB + post-bonding and conventional flip-chip process were evaluated in this study. Moreover, the two-step process with different TCB process times (1s, 3s and 5 s) were implemented into the first step. The partial melted joints, which were attained by TCB process, were expected to be fully bonded by the second step (reflow or post-bonding). Then, the temperature cycling test (TCT) was performed to verify reliability performance of the micro-bump-bonded interconnects. Based on the experimental and reliability results, the optimized conditions for the two-step bonding methods and a cost effective solution for the applications of 3DIC stacking can be established.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"45 1","pages":"366-369"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85952379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In order to meet the miniaturization trend and to reduce the power consumption for next generation devices, three-dimensional (3D) stacking is believed to be one of the technologies that can meet these requirements. In advanced 3D stacking technologies, one of the important steps is to develop and assembly fine pitch and high density microbumps. However, while the stacking chip size of top die and bottom die are similar, there is not enough space to dispense underfill, so it is a challenge for conventional underfill (CUF). In this paper, thermal compression bond (TCB) combine with non conductive paste (NCP) were studied. Adhesion between NCP and SiN, adhesion between NCP and PI, simulation of stress between bumps and chips were carried out and discussed. Finally, reliability test results were also reported in this paper.
{"title":"Reliability of thermal compression bond combine with non conductive paste process in fine pitch micro-bumps soldering","authors":"Chien-Feng Chan, Wen-Tsung Tseng, Huei-Nuan Huang, Mu-Hsuan Chan, Chun-Tang Lin, Chi-Hsin Chiu","doi":"10.1109/IMPACT.2011.6117230","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117230","url":null,"abstract":"In order to meet the miniaturization trend and to reduce the power consumption for next generation devices, three-dimensional (3D) stacking is believed to be one of the technologies that can meet these requirements. In advanced 3D stacking technologies, one of the important steps is to develop and assembly fine pitch and high density microbumps. However, while the stacking chip size of top die and bottom die are similar, there is not enough space to dispense underfill, so it is a challenge for conventional underfill (CUF). In this paper, thermal compression bond (TCB) combine with non conductive paste (NCP) were studied. Adhesion between NCP and SiN, adhesion between NCP and PI, simulation of stress between bumps and chips were carried out and discussed. Finally, reliability test results were also reported in this paper.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"22 1","pages":"119-121"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74716284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2011-12-29DOI: 10.1109/IMPACT.2011.6117275
C. Y. Tang, M. Tsai, C. Yen, L. B. Chang
The goal of this study is to experimentally and numerically study the thermal and optical behaviors of flip-chip (FC) LED packages with and without underfill. For thermal characterization, the junction temperature (Tj) and thermal resistance (Rth) are evaluated experimentally by a junction temperature tester and an infrared thermal imager, and numerically by ANSYS simulation. After the simulation model validation, the effect of bu mp number and underfill thermal conductivity on Tj and Rth was further investigated. For optical characterization, the light output of the packages are measured by an integrating sphere system and calculated by TracePro commercial software. Both thermal and optical results for these packages will be presented and discussed in terms of parameters such as number of bumps and underfill in this paper.
{"title":"Characterization of thermal and optical behaviors of flip-chip LED packages with various underfills","authors":"C. Y. Tang, M. Tsai, C. Yen, L. B. Chang","doi":"10.1109/IMPACT.2011.6117275","DOIUrl":"https://doi.org/10.1109/IMPACT.2011.6117275","url":null,"abstract":"The goal of this study is to experimentally and numerically study the thermal and optical behaviors of flip-chip (FC) LED packages with and without underfill. For thermal characterization, the junction temperature (Tj) and thermal resistance (Rth) are evaluated experimentally by a junction temperature tester and an infrared thermal imager, and numerically by ANSYS simulation. After the simulation model validation, the effect of bu mp number and underfill thermal conductivity on Tj and Rth was further investigated. For optical characterization, the light output of the packages are measured by an integrating sphere system and calculated by TracePro commercial software. Both thermal and optical results for these packages will be presented and discussed in terms of parameters such as number of bumps and underfill in this paper.","PeriodicalId":6360,"journal":{"name":"2011 6th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT)","volume":"4 1","pages":"327-331"},"PeriodicalIF":0.0,"publicationDate":"2011-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75331457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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