Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230181
Feng Xie, Zhiqun Li, Zhigong Wang
Abstract—This paper presents a 12-channel parallel 40Gb/s laser diode driver (LDD) realized in 0.35μm SiGe BiCMOS technology. The single channel works at bite rate of 3.318Gb/s. A “cross couple” capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20mA modulation current and 2-5mA bias current.
{"title":"A 12-Channel Parallel 40Gb/s 0.35μm SiGe BiCMOS Laser Diode Driver","authors":"Feng Xie, Zhiqun Li, Zhigong Wang","doi":"10.1109/SOPO.2009.5230181","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230181","url":null,"abstract":"Abstract—This paper presents a 12-channel parallel 40Gb/s laser diode driver (LDD) realized in 0.35μm SiGe BiCMOS technology. The single channel works at bite rate of 3.318Gb/s. A “cross couple” capacitance cancel technique is used to increase bandwidth. To avoid substrate coupling noise brought by the adjacent channel, an isolation method for parallel amplifier is used. The measured results show the LDD can supply 5-20mA modulation current and 2-5mA bias current.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87004726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230252
Jianping Wang, Shijun Qiao, Qiwu Wu
In this paper, the wavelength assignment problem in distributed optical networks is studied. We propose an improved dynamic and priority-based wavelength assignment algorithm- DPWA (Dynamic and priority-based wavelength assignment algorithm). This proposed DPWA algorithm can effectively reduce the average blocking probability and improve the wavelength utilization ratio by adding two dynamic factors related to the present wavelength utilization state. This improved algorithm can also satisfy different wavelength resources assignment aware of different service-level connection requests, which is more necessary and important in practical networks.
本文研究了分布式光网络中的波长分配问题。我们提出了一种改进的基于优先级的动态波长分配算法——DPWA (dynamic and priority-based wavelength assignment algorithm)。提出的DPWA算法通过加入与当前波长利用状态相关的两个动态因子，可以有效降低平均阻塞概率，提高波长利用率。该改进算法还可以满足不同服务级连接请求的不同波长资源分配，这在实际网络中更为必要和重要。
{"title":"A Novel Wavelength Assignment Algorithm for Distributed Optical Networks","authors":"Jianping Wang, Shijun Qiao, Qiwu Wu","doi":"10.1109/SOPO.2009.5230252","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230252","url":null,"abstract":"In this paper, the wavelength assignment problem in distributed optical networks is studied. We propose an improved dynamic and priority-based wavelength assignment algorithm- DPWA (Dynamic and priority-based wavelength assignment algorithm). This proposed DPWA algorithm can effectively reduce the average blocking probability and improve the wavelength utilization ratio by adding two dynamic factors related to the present wavelength utilization state. This improved algorithm can also satisfy different wavelength resources assignment aware of different service-level connection requests, which is more necessary and important in practical networks.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86383437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230104
Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin
(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics
{"title":"Study of a Novel ITO/AZO/SiO2/p-Si SIS Heterojunction","authors":"Bo He, Q. Zhong, Jing Xu, Lei Zhao, Feng Li, Cheng Shen, N. Zhang, ZhengShan Yu, Yanting Yin","doi":"10.1109/SOPO.2009.5230104","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230104","url":null,"abstract":"(1. SHU-Solar E PV Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China) (2. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WuHan University of technology, HuBei WuHan 430070,China) Abstract — ITO/AZO double films were deposited by RF sputtering on p-Si(100) substrate to fabricate ITO/AZO/SiO2/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe and Hall effect measurement, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect. Keywords— ITO; Al-doped ZnO (AZO); Sputtering; SIS heterojunction;, current-voltage(I-V) characteristics","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88250033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230084
Z. Hu, Zhengxun Song, S. Tong, Zhao Xin, Hongfei Song, Huilin Jiang
The optical communication networks comprised of ground stations, aircraft, high altitude platforms, and satellites become an attainable goal, however, some challenges need to be overcome. One of challenges involves the difficulty of acquisition, tracking, and pointing (ATP) a concentrated beam of light arriving from another platform across the far reach of space. To meet the pointing accuracy requirement, the basic method of tracking between the terminals of optical communication systems includes the use of a beacon laser and tracking system with a quadrant detector sensor on each terminal. In some future optical communication networks, it is plausible to assume that tracking system and communication receivers will use the same sensor. In this paper, the architecture of the fine tracking assembly of the designing optical communication terminal (OCT) is described, and the fine tracking assembly sensor is modeled based on the correlation coefficient. The simulation and experiment results of the sensor show that the detecting accuracy satisfies the design demand for our developing OCT. Keywords-modeling; quadrant detector; fine tracking sensor; optical communication networks
{"title":"Modeling of Fine Tracking Sensor for Free Space Laser Communication Systems","authors":"Z. Hu, Zhengxun Song, S. Tong, Zhao Xin, Hongfei Song, Huilin Jiang","doi":"10.1109/SOPO.2009.5230084","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230084","url":null,"abstract":"The optical communication networks comprised of ground stations, aircraft, high altitude platforms, and satellites become an attainable goal, however, some challenges need to be overcome. One of challenges involves the difficulty of acquisition, tracking, and pointing (ATP) a concentrated beam of light arriving from another platform across the far reach of space. To meet the pointing accuracy requirement, the basic method of tracking between the terminals of optical communication systems includes the use of a beacon laser and tracking system with a quadrant detector sensor on each terminal. In some future optical communication networks, it is plausible to assume that tracking system and communication receivers will use the same sensor. In this paper, the architecture of the fine tracking assembly of the designing optical communication terminal (OCT) is described, and the fine tracking assembly sensor is modeled based on the correlation coefficient. The simulation and experiment results of the sensor show that the detecting accuracy satisfies the design demand for our developing OCT. Keywords-modeling; quadrant detector; fine tracking sensor; optical communication networks","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86561558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230210
Yongming Yan, Chunyan Qin
In order to improve the performance and the resolution of f the CMOS image sensors, a new method of staggered fusion imaging of CMOS image sensor was presented in this paper. In the staggered fusion process, four CMOS images were taken staggeringly in half pixel offset in directions of horizontal, vertical and diagonal and then were composed into one image. Theoretical analysis about the relations of pixel gray-level of original multi- images taken by CMOS image sensor and the reconstructed new image proved that resolution of the reconstructed new image of CMOS sensor can be raised by 4 times than the original images. In the simulation experiments done afterwards we did get the higher resolution reconstructed image from lower resolution images. The experimental results verify the theory analysis well. It indicated that the staggered fusion imaging method is promising for the future development of higher performance and lower price CMOS image sensors.
{"title":"Study of Staggered Fusion Imaging Principle of CMOS Image Sensor","authors":"Yongming Yan, Chunyan Qin","doi":"10.1109/SOPO.2009.5230210","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230210","url":null,"abstract":"In order to improve the performance and the resolution of f the CMOS image sensors, a new method of staggered fusion imaging of CMOS image sensor was presented in this paper. In the staggered fusion process, four CMOS images were taken staggeringly in half pixel offset in directions of horizontal, vertical and diagonal and then were composed into one image. Theoretical analysis about the relations of pixel gray-level of original multi- images taken by CMOS image sensor and the reconstructed new image proved that resolution of the reconstructed new image of CMOS sensor can be raised by 4 times than the original images. In the simulation experiments done afterwards we did get the higher resolution reconstructed image from lower resolution images. The experimental results verify the theory analysis well. It indicated that the staggered fusion imaging method is promising for the future development of higher performance and lower price CMOS image sensors.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81677763","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230126
Xian-zeng Zhang, Z. Zhan, S. Xie, Qing Ye
To evaluate the zone of collateral thermal damage and crater morphology for evidence of defocus irradiation condition’s effect on the ablation of bovine shank bone with pulse CO2 laser. Bovine shank bone was divided into two groups, each group was put on a PC-controlled motorized linear drive stage which was located on the preand post-focus plane with a beam spot size of about 510 μm respectively and moved repeatedly through the focused beam. The wavelength of pulse CO2 laser was 10.64 μm, pulse repetition rate was 60 Hz. The moving speed of the stage was 20 mm/s, scan times was 6. the zone of thermal damage and crater morphology produced by pulse CO2 laser ablation were examined by light microscopy following standard histological processing. The results demonstrate that defocus irradiation condition has an important effect on ablation crater profile, crater morphology and the zone of collateral thermal damage. By selecting proper radiant exposure and focusing the beam spot not above but slightly beneath the bone surface, narrower but deeper cut with minimum collateral thermal injury can be obtained. Keywords-laser ablation; bone; CO2 laser; defocus irradiation
{"title":"Crater Morphology and Thermal Injury of Bovine Shank Bone Ablated by Pulse CO2 Laser with Different Defocusing Conditions","authors":"Xian-zeng Zhang, Z. Zhan, S. Xie, Qing Ye","doi":"10.1109/SOPO.2009.5230126","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230126","url":null,"abstract":"To evaluate the zone of collateral thermal damage and crater morphology for evidence of defocus irradiation condition’s effect on the ablation of bovine shank bone with pulse CO2 laser. Bovine shank bone was divided into two groups, each group was put on a PC-controlled motorized linear drive stage which was located on the preand post-focus plane with a beam spot size of about 510 μm respectively and moved repeatedly through the focused beam. The wavelength of pulse CO2 laser was 10.64 μm, pulse repetition rate was 60 Hz. The moving speed of the stage was 20 mm/s, scan times was 6. the zone of thermal damage and crater morphology produced by pulse CO2 laser ablation were examined by light microscopy following standard histological processing. The results demonstrate that defocus irradiation condition has an important effect on ablation crater profile, crater morphology and the zone of collateral thermal damage. By selecting proper radiant exposure and focusing the beam spot not above but slightly beneath the bone surface, narrower but deeper cut with minimum collateral thermal injury can be obtained. Keywords-laser ablation; bone; CO2 laser; defocus irradiation","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88908008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230311
Yan Liu, Yuanyuan Zhang, Yanshan Xiao, Yutian Lu
The amplifier chains are always the important parts of fiber amplifiers. In this paper, the gain characters of double-pass two-stage ytterbium-doped fiber amplifier were analyzed in theory. Firstly, the gain and output characters were also demonstrated when the signal power and pump power changed. Secondly, the relationship between gain and the ratio of the two fibers was analyzed when the length of fiber was given. The relationship between gain and ratio of power of two pump sources was also analyzed when the total pump power was given. At last, the optimization and the ratio of two fibers of the double- pass two-stage ytterbium-doped fiber amplifier were also discussed in detail
{"title":"The Gain Characters and Optimization of the Double-Pass Two-Stage Ytterbium-Doped Fiber Amplifier","authors":"Yan Liu, Yuanyuan Zhang, Yanshan Xiao, Yutian Lu","doi":"10.1109/SOPO.2009.5230311","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230311","url":null,"abstract":"The amplifier chains are always the important parts of fiber amplifiers. In this paper, the gain characters of double-pass two-stage ytterbium-doped fiber amplifier were analyzed in theory. Firstly, the gain and output characters were also demonstrated when the signal power and pump power changed. Secondly, the relationship between gain and the ratio of the two fibers was analyzed when the length of fiber was given. The relationship between gain and ratio of power of two pump sources was also analyzed when the total pump power was given. At last, the optimization and the ratio of two fibers of the double- pass two-stage ytterbium-doped fiber amplifier were also discussed in detail","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73678645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230302
Yang-Bin Xu, Jinbo Hao, P. Shi, Y. Ling
{"title":"Influence of Laser Distribution on the Thermal Effect of YVO4-Nd:YVO4 Composite Crystals","authors":"Yang-Bin Xu, Jinbo Hao, P. Shi, Y. Ling","doi":"10.1109/SOPO.2009.5230302","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230302","url":null,"abstract":"","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79460699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230067
C. Shen, Haifeng Li, Jianfeng Li, Yuzhi Xue
Firstly, undoped ZnO thin films were prepared on glass substrates by Sol-Gel dip-coating (by assembled diminutive dip-coating device),and radio-frequency magnetron sputtering respectively. X-ray diffraction(XRD). Scanning Electron Microscopy(SEM), Spectrophotometer, Surface profilometry were used to characterize their properties. The results indicated:on the glass substrates, at the same annealed temperature, the films prepared by radio-frequency magnetron sputtering had more excellent crystallization quality. Then, Al-doped (ZnO:Al(ZAO)) thin films were solely prepared on glass substrates by Sol-Gel dip-coating method(by assembled diminutive dip-coating device), Scanning Electron Microscopy(SEM), UV-Visible spectrophotometry(UV-Vis), digital four-point probe electrical resistance measurement were used to characterize their surface morphologies, transmission property, film thickness, resistance etc. The results indicated: The morphologies of ZAO thin films were more compact when the Al 3+ dopant concentration was 1.0at%; with increasing annealing temperature, the average grain size of the film increased, the resistance decreased. Under the Al 3+ dopant concentration of 1.5at%, annealing temperature of 550 0 C and annealing time of 2h , the average transmissivity of the film exceeded 70% within the visible region and resistance was 5.9×10 -2 � .cm.
{"title":"Electrical and Optical Properties of ZAO Thin Films Prepared by Sol-Gel Dip-Coating Method","authors":"C. Shen, Haifeng Li, Jianfeng Li, Yuzhi Xue","doi":"10.1109/SOPO.2009.5230067","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230067","url":null,"abstract":"Firstly, undoped ZnO thin films were prepared on glass substrates by Sol-Gel dip-coating (by assembled diminutive dip-coating device),and radio-frequency magnetron sputtering respectively. X-ray diffraction(XRD). Scanning Electron Microscopy(SEM), Spectrophotometer, Surface profilometry were used to characterize their properties. The results indicated:on the glass substrates, at the same annealed temperature, the films prepared by radio-frequency magnetron sputtering had more excellent crystallization quality. Then, Al-doped (ZnO:Al(ZAO)) thin films were solely prepared on glass substrates by Sol-Gel dip-coating method(by assembled diminutive dip-coating device), Scanning Electron Microscopy(SEM), UV-Visible spectrophotometry(UV-Vis), digital four-point probe electrical resistance measurement were used to characterize their surface morphologies, transmission property, film thickness, resistance etc. The results indicated: The morphologies of ZAO thin films were more compact when the Al 3+ dopant concentration was 1.0at%; with increasing annealing temperature, the average grain size of the film increased, the resistance decreased. Under the Al 3+ dopant concentration of 1.5at%, annealing temperature of 550 0 C and annealing time of 2h , the average transmissivity of the film exceeded 70% within the visible region and resistance was 5.9×10 -2 � .cm.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79525887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2009-09-01DOI: 10.1109/SOPO.2009.5230296
G. Lu, Yun Huang, Y. En, Shaohua Yang, Z. Lei
The reliability, long-term performance and lifetime of high power diode lasers are important issues for pumping of solid state and fiber laser systems. In order to obtain the lifetime data of high power QCW 808nm cm-bars, we have set up a computer controlled diode array reliability experiment which can automated monitor the laser arrays 24 hours a day. Using this setup 10 high power QCW cm-bars currently being tested was operated for more than 5.4 billion shots at 25 0 C with a pulse width of 200us and a duty factor of 2%, and one cm-bars suffered sudden failure at 3.24x10 7 shots, one cm-bars had reached the failure criterion at 1.98 billion shots. The failure analysis of these two failed device were reported on this paper. Keywords-reliability, laser diode, lifetime, sudden failure, failure analysis.
{"title":"Reliability of High Power QCW-AlGaAs/GaAs 808nm cm-Bars","authors":"G. Lu, Yun Huang, Y. En, Shaohua Yang, Z. Lei","doi":"10.1109/SOPO.2009.5230296","DOIUrl":"https://doi.org/10.1109/SOPO.2009.5230296","url":null,"abstract":"The reliability, long-term performance and lifetime of high power diode lasers are important issues for pumping of solid state and fiber laser systems. In order to obtain the lifetime data of high power QCW 808nm cm-bars, we have set up a computer controlled diode array reliability experiment which can automated monitor the laser arrays 24 hours a day. Using this setup 10 high power QCW cm-bars currently being tested was operated for more than 5.4 billion shots at 25 0 C with a pulse width of 200us and a duty factor of 2%, and one cm-bars suffered sudden failure at 3.24x10 7 shots, one cm-bars had reached the failure criterion at 1.98 billion shots. The failure analysis of these two failed device were reported on this paper. Keywords-reliability, laser diode, lifetime, sudden failure, failure analysis.","PeriodicalId":6416,"journal":{"name":"2009 Symposium on Photonics and Optoelectronics","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75824578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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