Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369291
J. Hostetler, Xueqing Li, P. Alexandrov, Xing Huang, A. Bhalla, M. Becker, Joseph Colombo, Derrick Dieso, J. Sherbondy
United Silicon Carbide, Inc. (USCi) has developed a novel low-loss 6.5kV enhancement-mode SiC JFET chipset to address transformerless grid-tie, variable frequency drives (VFD) for industrial motors, heavy vehicle motor traction and other high DC-link voltage applications. The JFET devices demonstrate excellent switching losses, approximately ~20X less than 6.5kV Si-IGBTs. The new JFET devices were packaged along with 6.5kV rated SiC JBS diodes in a half-bridge configuration to form an all-SiC high temperature power module rated at 60A. The module performance parameters vs. temperature were evaluated and are presented. Turn-on and turn-off behavior of the module and the nature of paralleling enhancement-mode JFETs are presented. The power modules were tested in a buck converter where switching a bus voltage of 3.3kV at 10kHz and 15kHz was achieved and module power losses estimated. The fast-switching medium voltage SiC module can have a large impact on reducing system components and targets next generation power conversion systems seeking higher power densities.
美国联合碳化硅公司(USCi)开发了一种新型低损耗6.5kV增强型SiC JFET芯片组，用于工业电机、重型车辆电机牵引和其他高直流电压应用的无变压器并网、变频驱动器(VFD)。JFET器件表现出优异的开关损耗，比6.5kV si - igbt低约20倍。新的JFET器件与6.5kV额定SiC JBS二极管一起封装在半桥结构中，形成额定60A的全SiC高温功率模块。对各模块的性能参数随温度的变化进行了评估并给出了结果。介绍了该模块的通断特性以及并联增强模式jfet的特性。功率模块在降压变换器中进行测试，在10kHz和15kHz时实现了3.3kV母线电压的切换，并估计了模块的功率损耗。快速开关中压SiC模块可以对减少系统组件和目标下一代功率转换系统寻求更高的功率密度产生重大影响。
{"title":"6.5kV enhancement mode SiC JFET based power module","authors":"J. Hostetler, Xueqing Li, P. Alexandrov, Xing Huang, A. Bhalla, M. Becker, Joseph Colombo, Derrick Dieso, J. Sherbondy","doi":"10.1109/WIPDA.2015.7369291","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369291","url":null,"abstract":"United Silicon Carbide, Inc. (USCi) has developed a novel low-loss 6.5kV enhancement-mode SiC JFET chipset to address transformerless grid-tie, variable frequency drives (VFD) for industrial motors, heavy vehicle motor traction and other high DC-link voltage applications. The JFET devices demonstrate excellent switching losses, approximately ~20X less than 6.5kV Si-IGBTs. The new JFET devices were packaged along with 6.5kV rated SiC JBS diodes in a half-bridge configuration to form an all-SiC high temperature power module rated at 60A. The module performance parameters vs. temperature were evaluated and are presented. Turn-on and turn-off behavior of the module and the nature of paralleling enhancement-mode JFETs are presented. The power modules were tested in a buck converter where switching a bus voltage of 3.3kV at 10kHz and 15kHz was achieved and module power losses estimated. The fast-switching medium voltage SiC module can have a large impact on reducing system components and targets next generation power conversion systems seeking higher power densities.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"37 1","pages":"300-305"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84087644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369302
Lanhua Zhang, Rachael Born, Xiaonan Zhao, J. Lai
This paper proposed a high efficiency standalone inverter design for Google Little Box Challenge (LBC). A full bridge inverter is designed with two high frequency legs and one low frequency leg. To improve the system efficiency, asymmetrical unipolar modulation is utilized and interleaved switching is used. The synchronization between high switching frequency leg and low switching frequency leg is studied and implemented based on a TI micro-controller, which minimized the zero-crossing distortion on the output voltage waveform. A prototype hardware utilizing GaN devices has been developed and tested. A peak efficiency with 99.30% and a CEC efficiency with 99.26% are both achieved.
{"title":"A high efficiency inverter design for Google little box challenge","authors":"Lanhua Zhang, Rachael Born, Xiaonan Zhao, J. Lai","doi":"10.1109/WIPDA.2015.7369302","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369302","url":null,"abstract":"This paper proposed a high efficiency standalone inverter design for Google Little Box Challenge (LBC). A full bridge inverter is designed with two high frequency legs and one low frequency leg. To improve the system efficiency, asymmetrical unipolar modulation is utilized and interleaved switching is used. The synchronization between high switching frequency leg and low switching frequency leg is studied and implemented based on a TI micro-controller, which minimized the zero-crossing distortion on the output voltage waveform. A prototype hardware utilizing GaN devices has been developed and tested. A peak efficiency with 99.30% and a CEC efficiency with 99.26% are both achieved.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"26 1","pages":"319-322"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78471229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369266
H. Wong, N. Braga, R. Mickevicius, Jie Liu
Using TCAD simulation, we studied the stress effect of pseudomorphically grown Al0.25Ga0.75N barrier and passivation nitride with intrinsic stress on the electrical characteristics of AlGaN/GaN HEMT. It is found that barrier stress can reduce the two-dimensional electron gas (2DEG) by as much as 15% and change the current by more than 10%, depending on the deformation potential values. Therefore, it is important to extract accurate conduction band deformation potential from experiment or first principle calculation. It is also found that the stress by passivation nitride will induce substantial piezoelectric (PE) charge under the gate region and can be used to adjust the pinch-off voltage through stress engineering for short gate length device.
{"title":"Study of the effects of barrier and passivation nitride stresses on AlGaN/GaN HEMT performance using TCAD simulation","authors":"H. Wong, N. Braga, R. Mickevicius, Jie Liu","doi":"10.1109/WIPDA.2015.7369266","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369266","url":null,"abstract":"Using TCAD simulation, we studied the stress effect of pseudomorphically grown Al0.25Ga0.75N barrier and passivation nitride with intrinsic stress on the electrical characteristics of AlGaN/GaN HEMT. It is found that barrier stress can reduce the two-dimensional electron gas (2DEG) by as much as 15% and change the current by more than 10%, depending on the deformation potential values. Therefore, it is important to extract accurate conduction band deformation potential from experiment or first principle calculation. It is also found that the stress by passivation nitride will induce substantial piezoelectric (PE) charge under the gate region and can be used to adjust the pinch-off voltage through stress engineering for short gate length device.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"40 1","pages":"24-27"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86880951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369274
P. Palmer, Jin Zhang, Xueqiang Zhang
Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFETs in series will enable high voltage high frequency applications. Nonetheless, the output capacitances of SiC MOSFETs are often found to ring with the significant stray inductance inevitably found in circuits with series connected devices. The active voltage control gate drive method is used here to clamp the MOSFET voltages to ensure low and stable overshoot voltages, good voltage balancement and a near ideal turn on. It is concluded that SiC MOSFETs and SiC diodes may be connected in series with significant advantages compared to Silicon (Si) IGBTs and Si diode technologies, and the benefits may be realized with the use of active voltage control.
{"title":"SiC MOSFETs connected in series with active voltage control","authors":"P. Palmer, Jin Zhang, Xueqiang Zhang","doi":"10.1109/WIPDA.2015.7369274","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369274","url":null,"abstract":"Silicon Carbide (SiC) MOSFETs offer rapid switching and low on-state voltages. Connecting SiC MOSFETs in series will enable high voltage high frequency applications. Nonetheless, the output capacitances of SiC MOSFETs are often found to ring with the significant stray inductance inevitably found in circuits with series connected devices. The active voltage control gate drive method is used here to clamp the MOSFET voltages to ensure low and stable overshoot voltages, good voltage balancement and a near ideal turn on. It is concluded that SiC MOSFETs and SiC diodes may be connected in series with significant advantages compared to Silicon (Si) IGBTs and Si diode technologies, and the benefits may be realized with the use of active voltage control.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"8 1","pages":"60-65"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90039690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369255
Liming Liu, J. Puukko, Jing Xu
This paper presents the analysis and design of gallium nitride (GaN) devices based flyback converter. It is critical to optimize power loop and gate loop for flyback converter due to high dv/dt of GaN device. EPC devices with 200V/12A were used in flyback converter. Because GaN device has no avalanche voltage and is sensitive to gate voltage, one need pay more attention to design of gate driver and selection snubber circuits. Different snubber circuits for GaN based flyback converter were compared in this paper. Magnetics selection for high frequency (HF) transformer was discussed in view of size, frequency, turn ratio and loss. A detailed power loss breakdown has been executed with core loss, cooper loss, leakage inductance loss, conduction loss and switching loss. Performance, such as current/voltage stress, voltage spike, efficiency, ect., were analyzed and compared under continuous conduction mode (CCM), boundary conduction mode (BCM), discontinuous conduction mode (DCM), and BCM with valley switching. Experimental results show highest efficiency is achieved under BCM with valley switching.
{"title":"Consideration of flyback converter using GaN devices","authors":"Liming Liu, J. Puukko, Jing Xu","doi":"10.1109/WIPDA.2015.7369255","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369255","url":null,"abstract":"This paper presents the analysis and design of gallium nitride (GaN) devices based flyback converter. It is critical to optimize power loop and gate loop for flyback converter due to high dv/dt of GaN device. EPC devices with 200V/12A were used in flyback converter. Because GaN device has no avalanche voltage and is sensitive to gate voltage, one need pay more attention to design of gate driver and selection snubber circuits. Different snubber circuits for GaN based flyback converter were compared in this paper. Magnetics selection for high frequency (HF) transformer was discussed in view of size, frequency, turn ratio and loss. A detailed power loss breakdown has been executed with core loss, cooper loss, leakage inductance loss, conduction loss and switching loss. Performance, such as current/voltage stress, voltage spike, efficiency, ect., were analyzed and compared under continuous conduction mode (CCM), boundary conduction mode (BCM), discontinuous conduction mode (DCM), and BCM with valley switching. Experimental results show highest efficiency is achieved under BCM with valley switching.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"84 1","pages":"196-200"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81452288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369286
Meng-Chia Lee, Xiaoqing Song, A. Huang
This paper proposes for the first time a novel characterization technique that can directly profile the spatial excess carrier in the voltage supporting drift region of a power device based on inductive switching waveforms. The theory this method is based on is to translate the dv/dt during inductive switching to the local excess carrier (from V(t)-t to 6p(x)-x). The information of the extracted profile can be used to obtain (i) ambipolar lifetime and (ii) Stored excess charge at given current in the device and (iii) estimate the carrier density near the side where majority carrier is injected. This model is used to extract carrier distribution of a high voltage SiC IGBT and GTO but the model can also be applied to other bipolar devices such as Si IGBT.
{"title":"Excess carrier mapping technique — A new parameter extraction method for 4H-SiC ambipolar power devices","authors":"Meng-Chia Lee, Xiaoqing Song, A. Huang","doi":"10.1109/WIPDA.2015.7369286","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369286","url":null,"abstract":"This paper proposes for the first time a novel characterization technique that can directly profile the spatial excess carrier in the voltage supporting drift region of a power device based on inductive switching waveforms. The theory this method is based on is to translate the dv/dt during inductive switching to the local excess carrier (from V(t)-t to 6p(x)-x). The information of the extracted profile can be used to obtain (i) ambipolar lifetime and (ii) Stored excess charge at given current in the device and (iii) estimate the carrier density near the side where majority carrier is injected. This model is used to extract carrier distribution of a high voltage SiC IGBT and GTO but the model can also be applied to other bipolar devices such as Si IGBT.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"98 1","pages":"51-55"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76502703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369258
Juncheng Lu, Qi Tian, K. Bai, Alan Brown, Matt Mcammond
Most of the present EV on-board chargers utilize a three-stage design, e.g., AC/DC rectifier, DC to high-frequency AC inverter, and AC to DC rectifier, which limits the wall-to-battery efficiency to ~94%. Instead of using the regular three-stage design, a matrix converter could directly convert grid AC to high-frequency AC thereby saves one stage and potentially increases the system efficiency, however, the control will be more complex and the high cost of building the back-to-back switches is inevitable. This paper adopts the 650V E-mode GaN HEMTs to build a level-2 on-board charger. The input voltage is 80~260VAC, the battery voltage is 200~500VDC and the rated power is 7.2kW with the bidirectional power-flow capability. Such design saves the bulky DC-bus capacitor. Variable switching frequency is combined with phase-shift control to realize the zero-voltage switching. An active filter is employed to choke the 120Hz output current ripple if needed. To further increase the system efficiency, four GaN HEMTs are paralleled to form one switching module. The overall system efficiency is >97% and the power density is 2.5kW/L with the active filter and 3.3kW/L without the active filter.
目前大多数EV车载充电器采用三级设计，例如AC/DC整流器，DC到高频交流逆变器，AC到DC整流器，这将壁到电池的效率限制在~94%。矩阵变换器不采用常规的三级设计，可以直接将电网交流转换为高频交流，从而节省一级，并有可能提高系统效率，但控制将更加复杂，并且制造背靠背开关的成本将不可避免。本文采用650V E-mode GaN hemt构建二级车载充电器。输入电压80~260VAC，蓄电池电压200~500VDC，额定功率7.2kW，具有双向潮流能力。这样的设计省去了笨重的直流母线电容。可变开关频率与移相控制相结合，实现零电压开关。如果需要，采用有源滤波器扼死120Hz输出电流纹波。为了进一步提高系统效率，四个GaN hemt并联形成一个开关模块。系统整体效率为97%，带有源滤波器时功率密度为2.5kW/L，不带有源滤波器时功率密度为3.3kW/L。
{"title":"An indirect matrix converter based 97%-efficiency on-board level 2 battery charger using E-mode GaN HEMTs","authors":"Juncheng Lu, Qi Tian, K. Bai, Alan Brown, Matt Mcammond","doi":"10.1109/WIPDA.2015.7369258","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369258","url":null,"abstract":"Most of the present EV on-board chargers utilize a three-stage design, e.g., AC/DC rectifier, DC to high-frequency AC inverter, and AC to DC rectifier, which limits the wall-to-battery efficiency to ~94%. Instead of using the regular three-stage design, a matrix converter could directly convert grid AC to high-frequency AC thereby saves one stage and potentially increases the system efficiency, however, the control will be more complex and the high cost of building the back-to-back switches is inevitable. This paper adopts the 650V E-mode GaN HEMTs to build a level-2 on-board charger. The input voltage is 80~260VAC, the battery voltage is 200~500VDC and the rated power is 7.2kW with the bidirectional power-flow capability. Such design saves the bulky DC-bus capacitor. Variable switching frequency is combined with phase-shift control to realize the zero-voltage switching. An active filter is employed to choke the 120Hz output current ripple if needed. To further increase the system efficiency, four GaN HEMTs are paralleled to form one switching module. The overall system efficiency is >97% and the power density is 2.5kW/L with the active filter and 3.3kW/L without the active filter.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"133 1","pages":"351-358"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75031068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369318
Xiucheng Huang, Tao Liu, Bin Li, F. Lee, Qiang Li
This paper presents elaborate evaluation of 600V/650V enhancement mode gallium nitride (GaN) devices. The switching loss mechanism and the impact of package and driving circuit parameters are illustrated in detail. The hard-switching turn-on loss is dominant due to junction capacitor charge of the freewheeling switch. The turn-off loss is much smaller and it can be further improved by driving circuit parameters and packaging. The driving circuit taking consider of high dv/dt and di/dt immunity is discussed. A few design examples are shown to demonstrate the advantage of GaN and the impact of GaN on system design.
{"title":"Evaluation and applications of 600V/650V enhancement-mode GaN devices","authors":"Xiucheng Huang, Tao Liu, Bin Li, F. Lee, Qiang Li","doi":"10.1109/WIPDA.2015.7369318","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369318","url":null,"abstract":"This paper presents elaborate evaluation of 600V/650V enhancement mode gallium nitride (GaN) devices. The switching loss mechanism and the impact of package and driving circuit parameters are illustrated in detail. The hard-switching turn-on loss is dominant due to junction capacitor charge of the freewheeling switch. The turn-off loss is much smaller and it can be further improved by driving circuit parameters and packaging. The driving circuit taking consider of high dv/dt and di/dt immunity is discussed. A few design examples are shown to demonstrate the advantage of GaN and the impact of GaN on system design.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"69 1","pages":"113-118"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86408357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369267
Hao Zheng, Xubin Wang, Xuemei Wang, L. Ran, Bo Zhang
Wide bandgap semiconductor devices like SiC have achieved more and more attentions in electric vehicles-(EVs) because of their high-temperature capability, high-power density, and high efficiency. As all known, EVs frequently operate in acceleration, deceleration and low speed driving in urban traffic. Thus, not only the rated operation condition should be considered, but also some extreme operation conditions. In order to study the variations of junction temperature of SiC-based MOSFETs comparing with Si-based IGBT of EVs inverter at different operation condition, an electro-thermal coupling model for 3-phase inverter of permanent magnet synchronous motor (PMSM) is used in this paper. Simulation results show that the maximum junction temperatures and junction temperature fluctuations of SiC MOSFETs are quite lower than that of Si IGBTs in all test conditions.
{"title":"Using SiC MOSFETs to improve reliability of EV inverters","authors":"Hao Zheng, Xubin Wang, Xuemei Wang, L. Ran, Bo Zhang","doi":"10.1109/WIPDA.2015.7369267","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369267","url":null,"abstract":"Wide bandgap semiconductor devices like SiC have achieved more and more attentions in electric vehicles-(EVs) because of their high-temperature capability, high-power density, and high efficiency. As all known, EVs frequently operate in acceleration, deceleration and low speed driving in urban traffic. Thus, not only the rated operation condition should be considered, but also some extreme operation conditions. In order to study the variations of junction temperature of SiC-based MOSFETs comparing with Si-based IGBT of EVs inverter at different operation condition, an electro-thermal coupling model for 3-phase inverter of permanent magnet synchronous motor (PMSM) is used in this paper. Simulation results show that the maximum junction temperatures and junction temperature fluctuations of SiC MOSFETs are quite lower than that of Si IGBTs in all test conditions.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"2 1","pages":"359-364"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80090454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369253
T. Baba, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai
The density and distribution of electron traps in AlGaN layer of GaN HEMT have been characterized. Based on electron tunneling between 2DEG and trap sites, the distance and density can be extracted with frequency dependent capacitance and conductance responses. With parameter fitting to measured capacitance and conductance spectra, a trap density of Nbt = 1021 cm-3eV-1 has be extracted. With different gate voltage or measurement temperature, the trap distribution within the AlGaN layer can be extracted under the same frequency range. From measurement temperature dependency, a capture cross section σ0 = 8 × 10-10 cm2 with an activation energy of 0.42 eV has been extracted.
{"title":"An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT","authors":"T. Baba, K. Kakushima, H. Wakabayashi, K. Tsutsui, H. Iwai","doi":"10.1109/WIPDA.2015.7369253","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369253","url":null,"abstract":"The density and distribution of electron traps in AlGaN layer of GaN HEMT have been characterized. Based on electron tunneling between 2DEG and trap sites, the distance and density can be extracted with frequency dependent capacitance and conductance responses. With parameter fitting to measured capacitance and conductance spectra, a trap density of N<sub>bt</sub> = 10<sup>21</sup> cm<sup>-3</sup>eV<sup>-1</sup> has be extracted. With different gate voltage or measurement temperature, the trap distribution within the AlGaN layer can be extracted under the same frequency range. From measurement temperature dependency, a capture cross section σ<sub>0</sub> = 8 × 10<sup>-10</sup> cm<sup>2</sup> with an activation energy of 0.42 eV has been extracted.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"60 1","pages":"125-128"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80461033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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