Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369328
T. Chow
We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.
{"title":"Wide bandgap semiconductor power devices for energy efficient systems","authors":"T. Chow","doi":"10.1109/WIPDA.2015.7369328","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369328","url":null,"abstract":"We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"16 1","pages":"402-405"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77098550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369292
S. Bajaj, Ting‐Hsiang Hung, F. Akyol, S. Krishnamoorthy, Sadia Khandaker, A. Armstrong, A. Allerman, S. Rajan
We investigate Al2O3/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al2O3/high composition Al0.7Ga0.3N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 × 1012 cm-2.
{"title":"Power switching transistors based on GaN and AlGaN channels","authors":"S. Bajaj, Ting‐Hsiang Hung, F. Akyol, S. Krishnamoorthy, Sadia Khandaker, A. Armstrong, A. Allerman, S. Rajan","doi":"10.1109/WIPDA.2015.7369292","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369292","url":null,"abstract":"We investigate Al<sub>2</sub>O<sub>3</sub>/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al<sub>2</sub>O<sub>3</sub>/high composition Al<sub>0.7</sub>Ga<sub>0.3</sub>N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 × 10<sup>12</sup> cm<sup>-2</sup>.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"10 1","pages":"16-20"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83472023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369290
Xuan Zhang, He Li, Chengcheng Yao, Jin Wang
This paper presents the study on the semiconductor-based galvanic isolation. This solution delivers the differential-mode (DM) power via semiconductor power switches during their on states, while sustaining the common-mode (CM) voltage and blocking the CM leakage current with those switches during their off states. While it is impractical to implement this solution with Si devices, the latest SiC devices and the coming vertical GaN devices, however, provide unprecedented properties and thus can potentially enable the practical implementation. An isolated dc/dc converter based on the switched-capacitor circuit is studied as an example. The CM leakage current caused by the line input and the resulted touch current (TC) are quantified and compared to the limits in the safety standard IEC60950. To reduce the TC, low switch output capacitance and low converter switching frequency are needed. Then, discussions are presented on the TC reduction approaches and the design considerations to achieve high power density and high efficiency. A 400-V, 400-W prototype based on 1.7-kV SiC MOSFETs is built to demo the DM power delivery performance and showcase the CM leakage current problem. Further study on the CM leakage current elimination is needed to validate this solution.
本文介绍了基于半导体的电流隔离的研究。该解决方案通过半导体电源开关在导通状态下提供差模(DM)功率，同时在关断状态下保持共模(CM)电压并阻断共模泄漏电流。虽然用硅器件实现这种解决方案是不切实际的，但最新的SiC器件和即将推出的垂直GaN器件提供了前所未有的性能，因此有可能实现实际实施。以一种基于开关电容电路的隔离型dc/dc变换器为例进行了研究。由线路输入引起的CM泄漏电流和由此产生的触摸电流(TC)被量化，并与安全标准IEC60950中的限值进行比较。为了降低TC，需要低开关输出电容和低变换器开关频率。然后，讨论了降低TC的方法和实现高功率密度和高效率的设计注意事项。构建了一个基于1.7 kv SiC mosfet的400-V, 400-W原型，以演示DM功率传输性能并展示CM泄漏电流问题。需要进一步研究CM漏电流消除，以验证该解决方案。
{"title":"Semiconductor-based galvanic isolation","authors":"Xuan Zhang, He Li, Chengcheng Yao, Jin Wang","doi":"10.1109/WIPDA.2015.7369290","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369290","url":null,"abstract":"This paper presents the study on the semiconductor-based galvanic isolation. This solution delivers the differential-mode (DM) power via semiconductor power switches during their on states, while sustaining the common-mode (CM) voltage and blocking the CM leakage current with those switches during their off states. While it is impractical to implement this solution with Si devices, the latest SiC devices and the coming vertical GaN devices, however, provide unprecedented properties and thus can potentially enable the practical implementation. An isolated dc/dc converter based on the switched-capacitor circuit is studied as an example. The CM leakage current caused by the line input and the resulted touch current (TC) are quantified and compared to the limits in the safety standard IEC60950. To reduce the TC, low switch output capacitance and low converter switching frequency are needed. Then, discussions are presented on the TC reduction approaches and the design considerations to achieve high power density and high efficiency. A 400-V, 400-W prototype based on 1.7-kV SiC MOSFETs is built to demo the DM power delivery performance and showcase the CM leakage current problem. Further study on the CM leakage current elimination is needed to validate this solution.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"39 7-8","pages":"268-274"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91498884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369319
A. Deshpande, F. Luo
In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.
{"title":"Design of a silicon-WBG hybrid switch","authors":"A. Deshpande, F. Luo","doi":"10.1109/WIPDA.2015.7369319","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369319","url":null,"abstract":"In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"288 1","pages":"296-299"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87100285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369324
A. De, S. Bhattacharya, R. Singh
The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.
{"title":"Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch","authors":"A. De, S. Bhattacharya, R. Singh","doi":"10.1109/WIPDA.2015.7369324","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369324","url":null,"abstract":"The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"34 1","pages":"10-15"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88929241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369293
D. Risbud, K. Pedrotti, M. Power, J. Pomeroy, Martin Kuball
Thermal characterization of large multi-finger AlGaN/GaN Schottky Barrier Diodes (SBDs) fabricated on GaN-on-Si high voltage power substrates is reported. An accurate thermal model was developed for the device structure to estimate the device temperature near the 2-DEG in HEMT switches for various power densities. Raman thermography and infrared imaging were used under DC bias conditions for temperature measurement and mapping of heat distribution in the devices. Temperature rise vs. power density, and temperature rise vs. device area are presented. The assumption of uniform temperature distribution throughout the channel holds well for smaller power devices typically used in microwave and RF circuits. However, for the substantially larger high voltage power diodes and HEMTs used in automotive, power conversion and motor drive applications, the temperature distribution is not homogeneous from the center of the die to the outer edge. Detailed knowledge of the temperature distribution across the die is essential for system level thermal management. Thermal simulation, characterization results and the temperature coefficient of the sense SBD are used to design a novel self-protecting thermal shutdown circuit integrated with a discrete 600V power HEMT.
{"title":"Thermal characterization of high voltage GaN-on-Si Schottky Barrier Diodes (SBD) for designing an on-chip thermal shutdown circuit for a power HEMT","authors":"D. Risbud, K. Pedrotti, M. Power, J. Pomeroy, Martin Kuball","doi":"10.1109/WIPDA.2015.7369293","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369293","url":null,"abstract":"Thermal characterization of large multi-finger AlGaN/GaN Schottky Barrier Diodes (SBDs) fabricated on GaN-on-Si high voltage power substrates is reported. An accurate thermal model was developed for the device structure to estimate the device temperature near the 2-DEG in HEMT switches for various power densities. Raman thermography and infrared imaging were used under DC bias conditions for temperature measurement and mapping of heat distribution in the devices. Temperature rise vs. power density, and temperature rise vs. device area are presented. The assumption of uniform temperature distribution throughout the channel holds well for smaller power devices typically used in microwave and RF circuits. However, for the substantially larger high voltage power diodes and HEMTs used in automotive, power conversion and motor drive applications, the temperature distribution is not homogeneous from the center of the die to the outer edge. Detailed knowledge of the temperature distribution across the die is essential for system level thermal management. Thermal simulation, characterization results and the temperature coefficient of the sense SBD are used to design a novel self-protecting thermal shutdown circuit integrated with a discrete 600V power HEMT.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"43 1","pages":"156-161"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89762897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369263
T. Heckel, L. Frey
Modeling of parasitic semiconductor device capacitances has always been a difficult task due to their nonlinearities. In this paper, we present a novel charge based model which provides simplification and ease of the modeling process. Further-more, convergence errors are reduced and the simulation speed is enhanced by up to a factor of two compared to state of the art models. This is especially important for novel SiC and GaN devices which allow for increased switching frequencies and thus a higher number of switching cycles per time period. Moreover, the presented modeling approach can easily be automated which is a significant advantage compared to state of the art models consisting of arbitrary mathematical equations.
{"title":"A novel charge based SPICE model for nonlinear device capacitances","authors":"T. Heckel, L. Frey","doi":"10.1109/WIPDA.2015.7369263","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369263","url":null,"abstract":"Modeling of parasitic semiconductor device capacitances has always been a difficult task due to their nonlinearities. In this paper, we present a novel charge based model which provides simplification and ease of the modeling process. Further-more, convergence errors are reduced and the simulation speed is enhanced by up to a factor of two compared to state of the art models. This is especially important for novel SiC and GaN devices which allow for increased switching frequencies and thus a higher number of switching cycles per time period. Moreover, the presented modeling approach can easily be automated which is a significant advantage compared to state of the art models consisting of arbitrary mathematical equations.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"26 1","pages":"141-146"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88028283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369301
Zichen Miao, Yincan Mao, K. Ngo, Woochan Kim
Power modules with well-behaved terminal waveforms could still have their dice suffering from false triggering. Immunities to false triggering and current unbalance, and switching energy of four commercial 1.2 kV SiC modules (modules A, B, C, and D) are compared by studying the simulated channel current of each MOSFET die in the presence of packages' parasitic impedances. For module B, gate inductance and Kelvin-source inductance of the low-side switch reaches 111 nH and 103 nH, respectively, and 15 Ω gate resistor is added inside the module to mitigate the false triggering. For modules A, B, and C, cross(talk-induced) turn-on are noticed internally even though terminal waveforms look normal. Module C switches with severe current unbalance and cross-turn-on because of asymmetry in the layout of its power loop. Module D's symmetrical layout suppresses current unbalance and cross-turn-on at the expense of switching energy, which is the largest among the modules.
{"title":"Package influence on the simulated performance of 1.2 kV SiC modules","authors":"Zichen Miao, Yincan Mao, K. Ngo, Woochan Kim","doi":"10.1109/WIPDA.2015.7369301","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369301","url":null,"abstract":"Power modules with well-behaved terminal waveforms could still have their dice suffering from false triggering. Immunities to false triggering and current unbalance, and switching energy of four commercial 1.2 kV SiC modules (modules A, B, C, and D) are compared by studying the simulated channel current of each MOSFET die in the presence of packages' parasitic impedances. For module B, gate inductance and Kelvin-source inductance of the low-side switch reaches 111 nH and 103 nH, respectively, and 15 Ω gate resistor is added inside the module to mitigate the false triggering. For modules A, B, and C, cross(talk-induced) turn-on are noticed internally even though terminal waveforms look normal. Module C switches with severe current unbalance and cross-turn-on because of asymmetry in the layout of its power loop. Module D's symmetrical layout suppresses current unbalance and cross-turn-on at the expense of switching energy, which is the largest among the modules.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"36 1","pages":"306-311"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86667303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369256
E. Jones, Fred Wang, D. Costinett, Zheyu Zhang, Ben Guo
Cross conduction is a well-known issue in buck converters and phase-leg topologies, in which fast switching transients cause spurious gate voltages in the synchronous device and a subsequent increase in switching loss. Cross conduction can typically be mitigated with a well-designed gate drive, but this is challenging with WBG devices. Phase legs using SiC and GaN devices can experience heavy cross conduction loss due to their exceptionally fast switching transients. Enhancement-mode GaN heterojunction field-effect transistors (HFETs) in the 600-V class are now commercially available, with switching transients as fast as 200 kV/μs. A double pulse test setup was used to measure the switching loss of one such GaN HFET, with several gate drive circuits and resistances. The results were analyzed and compared to characterize the effects of cross conduction in the active and synchronous devices of a phase-leg topology with enhancementmode GaN HFETs.
{"title":"Cross conduction analysis for enhancement-mode 650-V GaN HFETs in a phase-leg topology","authors":"E. Jones, Fred Wang, D. Costinett, Zheyu Zhang, Ben Guo","doi":"10.1109/WIPDA.2015.7369256","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369256","url":null,"abstract":"Cross conduction is a well-known issue in buck converters and phase-leg topologies, in which fast switching transients cause spurious gate voltages in the synchronous device and a subsequent increase in switching loss. Cross conduction can typically be mitigated with a well-designed gate drive, but this is challenging with WBG devices. Phase legs using SiC and GaN devices can experience heavy cross conduction loss due to their exceptionally fast switching transients. Enhancement-mode GaN heterojunction field-effect transistors (HFETs) in the 600-V class are now commercially available, with switching transients as fast as 200 kV/μs. A double pulse test setup was used to measure the switching loss of one such GaN HFET, with several gate drive circuits and resistances. The results were analyzed and compared to characterize the effects of cross conduction in the active and synchronous devices of a phase-leg topology with enhancementmode GaN HFETs.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"18 1","pages":"98-103"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87118852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369257
D. Johannesson, M. Nawaz
In this paper, a circuit level simulation model for SiC MOSFET power modules has been assessed. The static and dynamic characteristics of a 1.2 kV 800 A SiC MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. The SiC MOSFET power module is evaluated in two case studies, first where the power module is treated as a single device (simulated with one sub-module) and secondly where the performance of the power module is simulated as multiple MOSFET chips in parallel (multiple sub-modules). Here, the bond-wires between the chips are also included as inductive elements. The simulated static characteristics of the SiC MOSFET power module are well aligned with the measured data. In the first case, the simulation model in PSpice shows accurate dynamic performance overall, with exceptions from high-frequency oscillations that arises during turn-on and turn-off. The second case study shows that the oscillations can be captured by introducing multiple MOSFET chips in parallel and where the bond-wires in between are represented by inductors. A slight increase of high-frequency oscillations is noticed but on the cost of reduced simulation robustness (e.g. convergence issues) due to a more complex simulation circuit. Finally, it is concluded that the simulation model performance is overall accurate, both for static and dynamic performance. Further, the model is capable to estimate on-state loss and switching loss in a satisfactory manner and is utilized to evaluate and optimize power electronic converter cell parameters, for instance stray inductance, gate resistance and temperature, and their impact on converter energy loss.
本文对SiC MOSFET功率模块的电路级仿真模型进行了评估。在PSpice电路仿真平台上对一个1.2 kV 800 a SiC MOSFET功率模块的静态和动态特性进行了测量、仿真和验证。SiC MOSFET功率模块在两个案例研究中进行评估，首先将功率模块视为单个器件(用一个子模块模拟)，其次将功率模块的性能模拟为并行的多个MOSFET芯片(多个子模块)。在这里，芯片之间的连接线也包括作为感应元件。模拟的SiC MOSFET功率模块的静态特性与实测数据很好地吻合。在第一种情况下，PSpice中的仿真模型总体上显示出准确的动态性能，除了在打开和关断期间产生的高频振荡。第二个案例研究表明，振荡可以通过并行引入多个MOSFET芯片来捕获，其中之间的键合线由电感表示。注意到高频振荡的轻微增加，但由于更复杂的仿真电路，其代价是降低了仿真鲁棒性(例如收敛问题)。最后得出结论，仿真模型的静态和动态性能总体上是准确的。此外，该模型能够较好地估计导通损耗和开关损耗，并用于评估和优化电力电子变换器电池参数，如杂散电感、栅极电阻和温度，以及它们对变换器能量损耗的影响。
{"title":"Assessment of PSpice model for commercial SiC MOSFET power modules","authors":"D. Johannesson, M. Nawaz","doi":"10.1109/WIPDA.2015.7369257","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369257","url":null,"abstract":"In this paper, a circuit level simulation model for SiC MOSFET power modules has been assessed. The static and dynamic characteristics of a 1.2 kV 800 A SiC MOSFET power module has been measured, simulated and verified in the PSpice circuit simulation platform. The SiC MOSFET power module is evaluated in two case studies, first where the power module is treated as a single device (simulated with one sub-module) and secondly where the performance of the power module is simulated as multiple MOSFET chips in parallel (multiple sub-modules). Here, the bond-wires between the chips are also included as inductive elements. The simulated static characteristics of the SiC MOSFET power module are well aligned with the measured data. In the first case, the simulation model in PSpice shows accurate dynamic performance overall, with exceptions from high-frequency oscillations that arises during turn-on and turn-off. The second case study shows that the oscillations can be captured by introducing multiple MOSFET chips in parallel and where the bond-wires in between are represented by inductors. A slight increase of high-frequency oscillations is noticed but on the cost of reduced simulation robustness (e.g. convergence issues) due to a more complex simulation circuit. Finally, it is concluded that the simulation model performance is overall accurate, both for static and dynamic performance. Further, the model is capable to estimate on-state loss and switching loss in a satisfactory manner and is utilized to evaluate and optimize power electronic converter cell parameters, for instance stray inductance, gate resistance and temperature, and their impact on converter energy loss.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"3 1","pages":"291-295"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85280158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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