Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369328
T. Chow
We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.
{"title":"Wide bandgap semiconductor power devices for energy efficient systems","authors":"T. Chow","doi":"10.1109/WIPDA.2015.7369328","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369328","url":null,"abstract":"We review the vertical and lateral SiC and GaN power transistor types and structures explored and commercialized for advanced energy efficient systems. We have quantitatively evaluated the on-state performance of these power devices in the voltage rating range from 30-10kV. Based on these performance projections and technology development trends, we feel that this emerging class of power devices will become an important and indispensable component technology.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"16 1","pages":"402-405"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77098550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369292
S. Bajaj, Ting‐Hsiang Hung, F. Akyol, S. Krishnamoorthy, Sadia Khandaker, A. Armstrong, A. Allerman, S. Rajan
We investigate Al2O3/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al2O3/high composition Al0.7Ga0.3N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 × 1012 cm-2.
{"title":"Power switching transistors based on GaN and AlGaN channels","authors":"S. Bajaj, Ting‐Hsiang Hung, F. Akyol, S. Krishnamoorthy, Sadia Khandaker, A. Armstrong, A. Allerman, S. Rajan","doi":"10.1109/WIPDA.2015.7369292","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369292","url":null,"abstract":"We investigate Al<sub>2</sub>O<sub>3</sub>/AlGaN interface in GaN MOSHEMTs to engineer channel mobility and threshold voltage suitable for power switching applications. Using oxygen-plasma and annealing treatments, we find the optimal window for high mobility and threshold voltage. Next, we discuss the power switching figure of merit of high composition AlGaN based HEMTs and their potential to achieve large threshold voltages. Finally, we characterize the electrical properties of the interface between Al<sub>2</sub>O<sub>3</sub>/high composition Al<sub>0.7</sub>Ga<sub>0.3</sub>N, and measure the conduction band offset of approximately 1 eV with a low positive interface fixed charge density of +2.5 × 10<sup>12</sup> cm<sup>-2</sup>.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"10 1","pages":"16-20"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83472023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369290
Xuan Zhang, He Li, Chengcheng Yao, Jin Wang
This paper presents the study on the semiconductor-based galvanic isolation. This solution delivers the differential-mode (DM) power via semiconductor power switches during their on states, while sustaining the common-mode (CM) voltage and blocking the CM leakage current with those switches during their off states. While it is impractical to implement this solution with Si devices, the latest SiC devices and the coming vertical GaN devices, however, provide unprecedented properties and thus can potentially enable the practical implementation. An isolated dc/dc converter based on the switched-capacitor circuit is studied as an example. The CM leakage current caused by the line input and the resulted touch current (TC) are quantified and compared to the limits in the safety standard IEC60950. To reduce the TC, low switch output capacitance and low converter switching frequency are needed. Then, discussions are presented on the TC reduction approaches and the design considerations to achieve high power density and high efficiency. A 400-V, 400-W prototype based on 1.7-kV SiC MOSFETs is built to demo the DM power delivery performance and showcase the CM leakage current problem. Further study on the CM leakage current elimination is needed to validate this solution.
本文介绍了基于半导体的电流隔离的研究。该解决方案通过半导体电源开关在导通状态下提供差模(DM)功率，同时在关断状态下保持共模(CM)电压并阻断共模泄漏电流。虽然用硅器件实现这种解决方案是不切实际的，但最新的SiC器件和即将推出的垂直GaN器件提供了前所未有的性能，因此有可能实现实际实施。以一种基于开关电容电路的隔离型dc/dc变换器为例进行了研究。由线路输入引起的CM泄漏电流和由此产生的触摸电流(TC)被量化，并与安全标准IEC60950中的限值进行比较。为了降低TC，需要低开关输出电容和低变换器开关频率。然后，讨论了降低TC的方法和实现高功率密度和高效率的设计注意事项。构建了一个基于1.7 kv SiC mosfet的400-V, 400-W原型，以演示DM功率传输性能并展示CM泄漏电流问题。需要进一步研究CM漏电流消除，以验证该解决方案。
{"title":"Semiconductor-based galvanic isolation","authors":"Xuan Zhang, He Li, Chengcheng Yao, Jin Wang","doi":"10.1109/WIPDA.2015.7369290","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369290","url":null,"abstract":"This paper presents the study on the semiconductor-based galvanic isolation. This solution delivers the differential-mode (DM) power via semiconductor power switches during their on states, while sustaining the common-mode (CM) voltage and blocking the CM leakage current with those switches during their off states. While it is impractical to implement this solution with Si devices, the latest SiC devices and the coming vertical GaN devices, however, provide unprecedented properties and thus can potentially enable the practical implementation. An isolated dc/dc converter based on the switched-capacitor circuit is studied as an example. The CM leakage current caused by the line input and the resulted touch current (TC) are quantified and compared to the limits in the safety standard IEC60950. To reduce the TC, low switch output capacitance and low converter switching frequency are needed. Then, discussions are presented on the TC reduction approaches and the design considerations to achieve high power density and high efficiency. A 400-V, 400-W prototype based on 1.7-kV SiC MOSFETs is built to demo the DM power delivery performance and showcase the CM leakage current problem. Further study on the CM leakage current elimination is needed to validate this solution.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"39 7-8","pages":"268-274"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91498884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369319
A. Deshpande, F. Luo
In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.
{"title":"Design of a silicon-WBG hybrid switch","authors":"A. Deshpande, F. Luo","doi":"10.1109/WIPDA.2015.7369319","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369319","url":null,"abstract":"In this paper, a hybrid switch consisting of a Silicon (Si) IGBT in parallel with a Wide Bandgap (WBG) device, either SiC MOSFET or GaN HEMT within a single package is proposed for hard-switching inverters. The hybrid switch enables heavy load conduction through IGBT; light load and transient conduction through the WBG device. This feature is realized through a well-thought control scheme. This work explores the various possibility of controlling this switch, and detailed guidelines for realizing the proposed control are presented. Results indicate elimination of the effects caused by the tail current during turn-off of IGBT; lower or no reverse recovery charge and fast switching capabilities of WBG (Wide Bandgap) device offer significant reduction in the switching energy loss leading to higher switching frequencies. The paper specifically investigates the gating sequence for the hybrid switch to achieve the optimal operation point between the high switching frequency and low losses.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"288 1","pages":"296-299"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87100285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369315
Jun Wang, Zhiyu Shen, R. Burgos, D. Boroyevich
This presents a PCB-based Rogowski current sensor design for the purpose of shortcircuit protection for 1.7 kV SiC MOSFET modules. Firstly, the paper shows that using the DeSat protection method for SiC MOSFET protection is not as effective as that in conventional IGBT applications. Therefore, a direct measurement of device switching current is proposed to achieve shortcircuit protection. The Rogowski-coil-based current sensor is selected among several high-bandwidth candidates for its better overall performance. Then the PCB-based Rogowski coil and its signal processing circuit design are shown in the paper. Finally, experimental results validate that the designed sensor has good performance in both accuracy and bandwidth when compared to a commercial Rogowki probe.
本文提出了一种基于pcb的Rogowski电流传感器设计，用于1.7 kV SiC MOSFET模块的短路保护。首先，本文表明，采用DeSat保护方法对SiC MOSFET进行保护不如在传统IGBT应用中有效。因此，提出了一种直接测量器件开关电流的方法来实现短路保护。基于rogowski线圈的电流传感器因其更好的整体性能而被选择在几个高带宽候选产品中。然后介绍了基于pcb的Rogowski线圈及其信号处理电路的设计。实验结果表明，与商用Rogowki探针相比，所设计的传感器在精度和带宽方面都具有良好的性能。
{"title":"Design of a high-bandwidth Rogowski current sensor for gate-drive shortcircuit protection of 1.7 kV SiC MOSFET power modules","authors":"Jun Wang, Zhiyu Shen, R. Burgos, D. Boroyevich","doi":"10.1109/WIPDA.2015.7369315","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369315","url":null,"abstract":"This presents a PCB-based Rogowski current sensor design for the purpose of shortcircuit protection for 1.7 kV SiC MOSFET modules. Firstly, the paper shows that using the DeSat protection method for SiC MOSFET protection is not as effective as that in conventional IGBT applications. Therefore, a direct measurement of device switching current is proposed to achieve shortcircuit protection. The Rogowski-coil-based current sensor is selected among several high-bandwidth candidates for its better overall performance. Then the PCB-based Rogowski coil and its signal processing circuit design are shown in the paper. Finally, experimental results validate that the designed sensor has good performance in both accuracy and bandwidth when compared to a commercial Rogowki probe.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"23 1","pages":"104-107"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74954883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369262
A. Hoke, K. Bennion, V. Gevorgian, S. Chakraborty, E. Muljadi
As wind and solar displace synchronous generators whose inertia stabilizes the AC grid frequency on fast time scales, it has been proposed to use energy storage systems (ESSs) to mitigate frequency transient events. Such events require a rapid surge of power from the ESS, but they occur only rarely. The high temperature tolerance of SiC MOSFETs and diodes presents an opportunity for innovative ESS inverter designs. Herein we investigate a SiC ESS inverter design such that the SiC device ratings are obeyed during mild frequency events but are exceeded during rare, major events, for a potentially more economical inverter design. In support of this proposal we present: 1. An analysis of four years of grid frequency events in the U.S. Western Interconnection. 2. A switch-level ESS inverter simulation using SiC devices with detailed loss estimates. 3. Thermal analysis of the SiC power modules during a worst-case frequency event, showing that the modules can likely withstand the brief overcurrent. This analysis supports the conclusion that it may be advantageous for economical designs (acknowledging the increased risks) to undersize the SiC switches when designing inverters to perform active power control for grid frequency support. Such a strategy may result in SiC-based designs being more competitive with less costly silicon IGBT-based designs.
{"title":"Sizing SiC storage inverters for fast grid frequency support","authors":"A. Hoke, K. Bennion, V. Gevorgian, S. Chakraborty, E. Muljadi","doi":"10.1109/WIPDA.2015.7369262","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369262","url":null,"abstract":"As wind and solar displace synchronous generators whose inertia stabilizes the AC grid frequency on fast time scales, it has been proposed to use energy storage systems (ESSs) to mitigate frequency transient events. Such events require a rapid surge of power from the ESS, but they occur only rarely. The high temperature tolerance of SiC MOSFETs and diodes presents an opportunity for innovative ESS inverter designs. Herein we investigate a SiC ESS inverter design such that the SiC device ratings are obeyed during mild frequency events but are exceeded during rare, major events, for a potentially more economical inverter design. In support of this proposal we present: 1. An analysis of four years of grid frequency events in the U.S. Western Interconnection. 2. A switch-level ESS inverter simulation using SiC devices with detailed loss estimates. 3. Thermal analysis of the SiC power modules during a worst-case frequency event, showing that the modules can likely withstand the brief overcurrent. This analysis supports the conclusion that it may be advantageous for economical designs (acknowledging the increased risks) to undersize the SiC switches when designing inverters to perform active power control for grid frequency support. Such a strategy may result in SiC-based designs being more competitive with less costly silicon IGBT-based designs.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"3 1","pages":"328-333"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76728929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369275
Lin Liang, A. Huang, Woongje Sung, Meng-Chia Lee, Xiaoqing Song, Chang Peng, Lin Cheng, J. Palmour, C. Scozzie
The turn-on characteristics for the SiC p-ETO are researched in this paper. By establishing the two-dimensional numerical model of the SiC p-ETO, the influence of the device parameters and external circuit conditions on the turn-on speed is discussed. The experiments agree with the simulated results well. The npn turn-on mode of ETO is captured in a high di/dt experiment, which proves the existence of the FBSOA for this time hence the possibility of its application in converters without di/dt snubber. According to the intrinsic temperature limitation of the SiC material, the simulation shows that the peak power density of the SiC p-ETO during turn-on could reach several tens of MW/cm2.
{"title":"Turn-on capability of 22 kV SiC Emitter Turn-off (ETO) Thyristor","authors":"Lin Liang, A. Huang, Woongje Sung, Meng-Chia Lee, Xiaoqing Song, Chang Peng, Lin Cheng, J. Palmour, C. Scozzie","doi":"10.1109/WIPDA.2015.7369275","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369275","url":null,"abstract":"The turn-on characteristics for the SiC p-ETO are researched in this paper. By establishing the two-dimensional numerical model of the SiC p-ETO, the influence of the device parameters and external circuit conditions on the turn-on speed is discussed. The experiments agree with the simulated results well. The npn turn-on mode of ETO is captured in a high di/dt experiment, which proves the existence of the FBSOA for this time hence the possibility of its application in converters without di/dt snubber. According to the intrinsic temperature limitation of the SiC material, the simulation shows that the peak power density of the SiC p-ETO during turn-on could reach several tens of MW/cm2.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"92 1","pages":"192-195"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80416512","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369256
E. Jones, Fred Wang, D. Costinett, Zheyu Zhang, Ben Guo
Cross conduction is a well-known issue in buck converters and phase-leg topologies, in which fast switching transients cause spurious gate voltages in the synchronous device and a subsequent increase in switching loss. Cross conduction can typically be mitigated with a well-designed gate drive, but this is challenging with WBG devices. Phase legs using SiC and GaN devices can experience heavy cross conduction loss due to their exceptionally fast switching transients. Enhancement-mode GaN heterojunction field-effect transistors (HFETs) in the 600-V class are now commercially available, with switching transients as fast as 200 kV/μs. A double pulse test setup was used to measure the switching loss of one such GaN HFET, with several gate drive circuits and resistances. The results were analyzed and compared to characterize the effects of cross conduction in the active and synchronous devices of a phase-leg topology with enhancementmode GaN HFETs.
{"title":"Cross conduction analysis for enhancement-mode 650-V GaN HFETs in a phase-leg topology","authors":"E. Jones, Fred Wang, D. Costinett, Zheyu Zhang, Ben Guo","doi":"10.1109/WIPDA.2015.7369256","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369256","url":null,"abstract":"Cross conduction is a well-known issue in buck converters and phase-leg topologies, in which fast switching transients cause spurious gate voltages in the synchronous device and a subsequent increase in switching loss. Cross conduction can typically be mitigated with a well-designed gate drive, but this is challenging with WBG devices. Phase legs using SiC and GaN devices can experience heavy cross conduction loss due to their exceptionally fast switching transients. Enhancement-mode GaN heterojunction field-effect transistors (HFETs) in the 600-V class are now commercially available, with switching transients as fast as 200 kV/μs. A double pulse test setup was used to measure the switching loss of one such GaN HFET, with several gate drive circuits and resistances. The results were analyzed and compared to characterize the effects of cross conduction in the active and synchronous devices of a phase-leg topology with enhancementmode GaN HFETs.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"18 1","pages":"98-103"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87118852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369324
A. De, S. Bhattacharya, R. Singh
The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.
{"title":"Performance evaluation and characterization of 6500V asymmetric SiC NPNP Thyristor based current switch","authors":"A. De, S. Bhattacharya, R. Singh","doi":"10.1109/WIPDA.2015.7369324","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369324","url":null,"abstract":"The main motivation of this work is to evaluate performance and characteristics of a 6.5kV SiC Thyristor based current switch (series connected active switch and diode). A unique series resonant testing circuit has been proposed to characterize this switch. The device has been tested in several soft and hard turn on and off transitions. Conceptual simulation and hardware results have been presented. It has been shown that SiC Thyristor exhibit fast turn-on transitions (~200ns). This coupled with the fact that SiC-JBS Diode (connected in series) has fast reverse voltage commutation leads to an efficient and robust switch combination for a high voltage, high power and high frequency converter. The collected data has been used to estimate overall device losses of a high voltage and high power resonant soft-switched converter.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"34 1","pages":"10-15"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88929241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-11-01DOI: 10.1109/WIPDA.2015.7369263
T. Heckel, L. Frey
Modeling of parasitic semiconductor device capacitances has always been a difficult task due to their nonlinearities. In this paper, we present a novel charge based model which provides simplification and ease of the modeling process. Further-more, convergence errors are reduced and the simulation speed is enhanced by up to a factor of two compared to state of the art models. This is especially important for novel SiC and GaN devices which allow for increased switching frequencies and thus a higher number of switching cycles per time period. Moreover, the presented modeling approach can easily be automated which is a significant advantage compared to state of the art models consisting of arbitrary mathematical equations.
{"title":"A novel charge based SPICE model for nonlinear device capacitances","authors":"T. Heckel, L. Frey","doi":"10.1109/WIPDA.2015.7369263","DOIUrl":"https://doi.org/10.1109/WIPDA.2015.7369263","url":null,"abstract":"Modeling of parasitic semiconductor device capacitances has always been a difficult task due to their nonlinearities. In this paper, we present a novel charge based model which provides simplification and ease of the modeling process. Further-more, convergence errors are reduced and the simulation speed is enhanced by up to a factor of two compared to state of the art models. This is especially important for novel SiC and GaN devices which allow for increased switching frequencies and thus a higher number of switching cycles per time period. Moreover, the presented modeling approach can easily be automated which is a significant advantage compared to state of the art models consisting of arbitrary mathematical equations.","PeriodicalId":6538,"journal":{"name":"2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA)","volume":"26 1","pages":"141-146"},"PeriodicalIF":0.0,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88028283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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