Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547310
H. Seigneur, Jason Lincoln, E. Schneller, A. Gabor
In this work, we performed four variations of cyclic load testing on four groups of modules using the LoadSpot tool. Each group first underwent 50 thermal cycles (TC50), 10 humidity-freeze cycles (HF10), and a 2400 Pa static load. Then, the baseline group was tested using standard cyclic loading conditions from IEC 62782, another with double the loading frequency, one with larger loading magnitude, and one with smaller loading magnitude and quadruple the loading frequency. Interestingly, we found that increasing the loading frequency actually reduces maximum power degradation with respect to the baseline, whereas increasing or decreasing the load amplitude respectively increases or decreases maximum power degradation with respect to the baseline. In order to confirm the results, we conducted another experiment with a new group using modules of a different make and model. This group did not undergo TC50 nor HF 10, only a 5400Pa static load to create cracks. For this group, the maximum power degradation did not show a dependence on the loading frequency during cyclic loading. We offer a possible explanation for this unexpected result associated with increasing the loading frequency.
{"title":"Accelerating Cyclic Loading","authors":"H. Seigneur, Jason Lincoln, E. Schneller, A. Gabor","doi":"10.1109/PVSC.2018.8547310","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547310","url":null,"abstract":"In this work, we performed four variations of cyclic load testing on four groups of modules using the LoadSpot tool. Each group first underwent 50 thermal cycles (TC50), 10 humidity-freeze cycles (HF10), and a 2400 Pa static load. Then, the baseline group was tested using standard cyclic loading conditions from IEC 62782, another with double the loading frequency, one with larger loading magnitude, and one with smaller loading magnitude and quadruple the loading frequency. Interestingly, we found that increasing the loading frequency actually reduces maximum power degradation with respect to the baseline, whereas increasing or decreasing the load amplitude respectively increases or decreases maximum power degradation with respect to the baseline. In order to confirm the results, we conducted another experiment with a new group using modules of a different make and model. This group did not undergo TC50 nor HF 10, only a 5400Pa static load to create cracks. For this group, the maximum power degradation did not show a dependence on the loading frequency during cyclic loading. We offer a possible explanation for this unexpected result associated with increasing the loading frequency.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"38 1","pages":"1328-1332"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79619555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548004
S. Misra, D. Pruzan, Lauren R. Richey-Simonsen, Maoji Wang, V. Palekis, J. Aguiar, J. Gerton, C. Ferekides, M. Scarpulla
We discuss the optoelectronic property variation between grains and grain boundaries of CdTe polycrystalline thin films using a confocal microscopy system. Single-photon photoluminescence (PL) and time-resolved photoluminescence spectroscopy (PL) is used to map $10 times 10 mu mathrm {m}^{2}$ area at the back surface of CdTe with an optical resolution of 104 nm. TRPL maps show that different grain boundaries have different near-surface lifetimes. Surprisingly, grain-boundaries with high near-surface lifetime are associated with regions of the sample that have low PL yield. This study demonstrates the potential of confocal PL and TRPL mapping to understand carrier lifetime variations in thin films.
利用共聚焦显微镜系统研究了碲化镉多晶薄膜的晶界和晶粒间光电性能的变化。利用单光子光致发光(PL)和时间分辨光致发光光谱(PL)在CdTe背表面绘制了$10 × 10 mu mathm {m}^{2}$的面积，光学分辨率为104 nm。TRPL图显示，不同的晶界具有不同的近地表寿命。令人惊讶的是，具有高近表面寿命的晶界与样品中PL产率低的区域相关。这项研究证明了共聚焦PL和TRPL映射在了解薄膜中载流子寿命变化方面的潜力。
{"title":"Mapping carrier lifetime variations in polycrystalline CdTe thin films using confocal microscopy","authors":"S. Misra, D. Pruzan, Lauren R. Richey-Simonsen, Maoji Wang, V. Palekis, J. Aguiar, J. Gerton, C. Ferekides, M. Scarpulla","doi":"10.1109/PVSC.2018.8548004","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548004","url":null,"abstract":"We discuss the optoelectronic property variation between grains and grain boundaries of CdTe polycrystalline thin films using a confocal microscopy system. Single-photon photoluminescence (PL) and time-resolved photoluminescence spectroscopy (PL) is used to map $10 times 10 mu mathrm {m}^{2}$ area at the back surface of CdTe with an optical resolution of 104 nm. TRPL maps show that different grain boundaries have different near-surface lifetimes. Surprisingly, grain-boundaries with high near-surface lifetime are associated with regions of the sample that have low PL yield. This study demonstrates the potential of confocal PL and TRPL mapping to understand carrier lifetime variations in thin films.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"25 1","pages":"1925-1927"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81045405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547825
B. Stannowski, L. Mazzarella, Yen‐Hung Lin, Simon Kirner, A. Morales-Vilches, L. Korte, S. Albrecht, Edward J. W. Crossland, C. Case, H. Snaith, R. Schlatmann
Silicon heterojunction solar cells are implemented as bottom cells in monolithic perovskite/silicon tandem solar cells. Commonly they are processed with a smooth front side to facilitate wet processing of the lead-halide perovskite cell on top. The inherent drawback of this design, namely, enhanced reflection of the cell, can be significantly reduced by replacing the amorphous or nanocrystalline silicon front side n layer of the silicon cell by a nanocrystalline silicon oxide n layer. It is deposited with the same commonly used plasma-enhanced chemical vapor deposition and can be tuned to feature opto-electrical properties for enhanced light coupling into the Si bottom cell, namely, low parasitic absorption and an intermediate refractive index of $sim 2.6$. We demonstrate that a 80 – 100 nm thick layer results in 0.9 mA/cm2 current gain in the bottom cell yielding tandem cells with a top cell + bottom cell total current above 39 mA/cm2. These first nc-SiOx:H-coupled tandem cells reach an efficiency >23.5 %.
{"title":"Nanocrystalline silicon oxide interlayer in monolithic perovskite/silicon heterojunction tandem solar cells with total current density >39 mA/cm2","authors":"B. Stannowski, L. Mazzarella, Yen‐Hung Lin, Simon Kirner, A. Morales-Vilches, L. Korte, S. Albrecht, Edward J. W. Crossland, C. Case, H. Snaith, R. Schlatmann","doi":"10.1109/PVSC.2018.8547825","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547825","url":null,"abstract":"Silicon heterojunction solar cells are implemented as bottom cells in monolithic perovskite/silicon tandem solar cells. Commonly they are processed with a smooth front side to facilitate wet processing of the lead-halide perovskite cell on top. The inherent drawback of this design, namely, enhanced reflection of the cell, can be significantly reduced by replacing the amorphous or nanocrystalline silicon front side n layer of the silicon cell by a nanocrystalline silicon oxide n layer. It is deposited with the same commonly used plasma-enhanced chemical vapor deposition and can be tuned to feature opto-electrical properties for enhanced light coupling into the Si bottom cell, namely, low parasitic absorption and an intermediate refractive index of $sim 2.6$. We demonstrate that a 80 – 100 nm thick layer results in 0.9 mA/cm2 current gain in the bottom cell yielding tandem cells with a top cell + bottom cell total current above 39 mA/cm2. These first nc-SiOx:H-coupled tandem cells reach an efficiency >23.5 %.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"7 1","pages":"2627-2630"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84692875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547980
Samuel Raj, J. Wong, S. Ramprasad, Precis Teena, A. Khanna, Vinodh Shanmugam, J. Ho, A. Aberle, T. Mueller
Conventional I-V testing of solar cells involves probe bars with voltage sense points and current sourcing points on the cell’s front busbars. However, this approach is not suitable for busbarless solar cells and multi-busbar (example: 12 to 18 narrow busbars) solar cells. This work introduces three measurement probe configurations for the I-V testing of busbarless and multibusbar solar cells: 1) probe bars that consist of a dense array of dipole testprobes for precise four-wire measurement; 2) staggered ring-type alternating source and sense contacts; 3) thin $200 mu mathrm{m}$ probe bars with contact points with negligible shading loss.
太阳能电池的传统I-V测试包括在电池的前母线上带有电压感测点和电流源点的探针棒。但是，这种方法不适用于无母线太阳能电池和多母线(例如:12至18个窄母线)太阳能电池。本文介绍了用于无母线和多母线太阳能电池I-V测试的三种测量探头配置:1)探头棒由密集的偶极测试探头阵列组成，用于精确的四线测量;2)交错环型源感交变触点;3)轻薄的$200 mu maththrm {m}$探针杆，带有接触点，遮光损失可忽略不计。
{"title":"Effective I-V Measurement Techniques for Busbarless and MultiBusbar Solar cells","authors":"Samuel Raj, J. Wong, S. Ramprasad, Precis Teena, A. Khanna, Vinodh Shanmugam, J. Ho, A. Aberle, T. Mueller","doi":"10.1109/PVSC.2018.8547980","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547980","url":null,"abstract":"Conventional I-V testing of solar cells involves probe bars with voltage sense points and current sourcing points on the cell’s front busbars. However, this approach is not suitable for busbarless solar cells and multi-busbar (example: 12 to 18 narrow busbars) solar cells. This work introduces three measurement probe configurations for the I-V testing of busbarless and multibusbar solar cells: 1) probe bars that consist of a dense array of dipole testprobes for precise four-wire measurement; 2) staggered ring-type alternating source and sense contacts; 3) thin $200 mu mathrm{m}$ probe bars with contact points with negligible shading loss.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"55 1","pages":"3294-3297"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77260517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547795
Hailing Li, Fang Lv
This paper presents the analysis of degradation rate and fail models of PV crystalline silicon modules operated 1030 years from 5 plants 4 climatic zones in China. The PV modules wereused as off-grid home system, roof on-grid system, and ground on-grid system. The 4 climatic zones cover most of PV market in china. By visual inspection study we find that the highest frequency of failure model found here is metallization and interconnect corrosion. The average degradation rate of the tested modules is 0.73%/year. No clear correlation between degradation rate and climatic zone is found.
{"title":"Study on failure models and degradation rate of PV aged modules in field in China","authors":"Hailing Li, Fang Lv","doi":"10.1109/PVSC.2018.8547795","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547795","url":null,"abstract":"This paper presents the analysis of degradation rate and fail models of PV crystalline silicon modules operated 1030 years from 5 plants 4 climatic zones in China. The PV modules wereused as off-grid home system, roof on-grid system, and ground on-grid system. The 4 climatic zones cover most of PV market in china. By visual inspection study we find that the highest frequency of failure model found here is metallization and interconnect corrosion. The average degradation rate of the tested modules is 0.73%/year. No clear correlation between degradation rate and climatic zone is found.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"11 1","pages":"727-730"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83631509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8547896
W. He, Jin Yang, Liang Lei, Chuanke Chen, Hong Yang, He Wang, Mingchang Ding, Shuangqing Zhang
In this paper, the influence of the snail trails on the performance and long-term reliability of solar modules were investigated in detail by six years of tracking test of 4 solar modules with snail trails. The results show that the snail trails have no obvious expansion over the six years. And the average power degradation of the snail trails was 0.6% per year, which is in the normal range. These results indicated that the snail trail is only an appearance defect, which has no obvious negative effect on the electrical performance of solar modules.
{"title":"Long Term Testing over 6 Years on Crystalline Silicon Solar Modules with Snail Trails","authors":"W. He, Jin Yang, Liang Lei, Chuanke Chen, Hong Yang, He Wang, Mingchang Ding, Shuangqing Zhang","doi":"10.1109/PVSC.2018.8547896","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8547896","url":null,"abstract":"In this paper, the influence of the snail trails on the performance and long-term reliability of solar modules were investigated in detail by six years of tracking test of 4 solar modules with snail trails. The results show that the snail trails have no obvious expansion over the six years. And the average power degradation of the snail trails was 0.6% per year, which is in the normal range. These results indicated that the snail trail is only an appearance defect, which has no obvious negative effect on the electrical performance of solar modules.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"61 1","pages":"0700-0704"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88488316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548183
A. Adrián Santamaría Lancia, Nicholas Riedel, Rasmus Overgaard Ploug, Sune Thorsteinsson, P. Poulsen, A. Gisele dos Reis Benatto
This works present a method for synchronization of a solar device to real solar time for event triggering and energy management. Specifications require the devices to be off-grid and self-adjusting. Measurements of daylight duration were performed using one test device over the course of several months in Denmark. Analysis of viability over the accuracy of solar time determination and potential for self-adjusting energy management was carried out. Measurement results allowed for the development of an algorithm with good potential for performing the required tasks. Influence of variations in weather and different shadowing conditions were tested in two prototype devices. Results show a good potential for estimation of solar time and daily synchronization between devices within less than 5 minutes error.
{"title":"Synchronization of Solar Stand-alone Devices and Autonomous Energy Management through Solar Time Measurements","authors":"A. Adrián Santamaría Lancia, Nicholas Riedel, Rasmus Overgaard Ploug, Sune Thorsteinsson, P. Poulsen, A. Gisele dos Reis Benatto","doi":"10.1109/PVSC.2018.8548183","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548183","url":null,"abstract":"This works present a method for synchronization of a solar device to real solar time for event triggering and energy management. Specifications require the devices to be off-grid and self-adjusting. Measurements of daylight duration were performed using one test device over the course of several months in Denmark. Analysis of viability over the accuracy of solar time determination and potential for self-adjusting energy management was carried out. Measurement results allowed for the development of an algorithm with good potential for performing the required tasks. Influence of variations in weather and different shadowing conditions were tested in two prototype devices. Results show a good potential for estimation of solar time and daily synchronization between devices within less than 5 minutes error.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"27 1","pages":"0632-0637"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90721764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548010
S. Pouladi, M. Rathi, P. Dutta, S. Oh, D. Khatiwada, Yao Yao, Ying Gao, Sicong Sun, Yongkuan Li, M. Asadirad, Shahab Shervin, Jie Chen, V. Selvamanickam, J. Ryou
III-V compound semiconductors are the best photovoltaic solar cell (SC) materials for highest conversion efficiencies. However, they are expensive and lack in mechanical flexibility and manufacturing scalability. We developed a new PV platform where nearly single-crystalline III-V thin films were directly deposited on inexpensive polycrystalline metal tapes. While a promising efficiency of ~7.5% was achieved for flexible single junction SCs on this platform, the open circuit voltage of SC suffers from minority carrier recombination at grainboundary sites according to a simulation study. A bulk passivation treatment is conducted on the SC devices which resulted in more than 350mV increase for Voc.
{"title":"Toward Higher Efficiency of Low-Cost Flexible Single-Crystal-Like GaAs Thin Film Solar Cells on Metal Tapes","authors":"S. Pouladi, M. Rathi, P. Dutta, S. Oh, D. Khatiwada, Yao Yao, Ying Gao, Sicong Sun, Yongkuan Li, M. Asadirad, Shahab Shervin, Jie Chen, V. Selvamanickam, J. Ryou","doi":"10.1109/PVSC.2018.8548010","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548010","url":null,"abstract":"III-V compound semiconductors are the best photovoltaic solar cell (SC) materials for highest conversion efficiencies. However, they are expensive and lack in mechanical flexibility and manufacturing scalability. We developed a new PV platform where nearly single-crystalline III-V thin films were directly deposited on inexpensive polycrystalline metal tapes. While a promising efficiency of ~7.5% was achieved for flexible single junction SCs on this platform, the open circuit voltage of SC suffers from minority carrier recombination at grainboundary sites according to a simulation study. A bulk passivation treatment is conducted on the SC devices which resulted in more than 350mV increase for Voc.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"27 1","pages":"0237-0239"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91079402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548304
S. Bakhshi, N. Zin, Marshall Wilson, I. Kashkoush, K. Davis, W. Schoenfeld
It is long recognized that the effective surface clean is critical for the increased performance of solar cell and semiconductor devices. In this contribution, we introduced the effectiveness of crystalline silicon surface clean by a simple ultraviolet-ozone (UVo) process by comparing it against the industry standard RCA and UV assisted deionized water (DiO3) techniques. Despite being simple, UV-ozone cleaning results in an effective surface passivation quality that is comparable to both RCA and DiO3 clean, i.e., saturation current density (J0) of 7 fA/cm2 compared to 5 fA/cm2 and 8 fA/cm2. In addition to the surface clean, we presented that both UVo and DiO3 oxides can be used as a highly-quality chemical passivation to the crystalline silicon substrate, but with UVo oxide offering an improved passivation than DiO3 oxide. Incorporating the UV}o oxide in between the interface of silicon and aluminum oxide or silicon nitride reduces J0 by $gt 50$%, compared to the interface without the UVo oxide.
{"title":"Diversified Applications of UV-Ozone Oxide: Effective Surface Clean and High-Quality Passivation","authors":"S. Bakhshi, N. Zin, Marshall Wilson, I. Kashkoush, K. Davis, W. Schoenfeld","doi":"10.1109/PVSC.2018.8548304","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548304","url":null,"abstract":"It is long recognized that the effective surface clean is critical for the increased performance of solar cell and semiconductor devices. In this contribution, we introduced the effectiveness of crystalline silicon surface clean by a simple ultraviolet-ozone (UVo) process by comparing it against the industry standard RCA and UV assisted deionized water (DiO3) techniques. Despite being simple, UV-ozone cleaning results in an effective surface passivation quality that is comparable to both RCA and DiO3 clean, i.e., saturation current density (J0) of 7 fA/cm2 compared to 5 fA/cm2 and 8 fA/cm2. In addition to the surface clean, we presented that both UVo and DiO3 oxides can be used as a highly-quality chemical passivation to the crystalline silicon substrate, but with UVo oxide offering an improved passivation than DiO3 oxide. Incorporating the UV}o oxide in between the interface of silicon and aluminum oxide or silicon nitride reduces J0 by $gt 50$%, compared to the interface without the UVo oxide.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"1 1","pages":"3065-3068"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89561212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2018-06-01DOI: 10.1109/PVSC.2018.8548247
A. Jeffries, M. Bertoni
Reactive silver ink (RSI) forms low-resistivity (<5μΩ.cm) metallization at temperatures below 100 °C-enabling lower resistive losses for thermally sensitive solar cells while drastically reducing Ag usage compared to other low-temperature Ag pastes. However, before adoption of the technology many reliability related questions must be addressed. Ag-based metallizations are susceptible to corrosion by acetic acid formed in encapsulated modules, resulting in increased resistive losses. Here we report on corrosion of three types of metallizations; high-firing-temperature Ag paste (HT Ag Paste), low-temperature Ag paste (LT Ag Paste), and RSI. We develop a method for exposing these metallizations to dilute acetic acid in concentrations comparable to those found in field- and damp heat-exposed modules. We find that HT Ag and RSI are quickly affected by acetic acid exposure after only 24 h. Interestingly, Raman spectroscopy suggests the formation of AgCl or AgCH3COO on HT Ag Paste, dissolution of AgCH3COO from RSI, and LT Ag Paste remains relatively unchanged throughout 2936 h of exposure to diluted acetic acid.
反应银油墨(RSI)在低于100°c的温度下形成低电阻率(<5μΩ.cm)金属化，使热敏太阳能电池的电阻损失更低，同时与其他低温银糊相比，大大减少了银的使用。然而，在采用该技术之前，必须解决许多与可靠性相关的问题。银基金属化易受封装模块中形成的醋酸腐蚀，导致电阻损失增加。这里我们报道了三种金属化的腐蚀;高温银膏体(HT Ag paste)、低温银膏体(LT Ag paste)和RSI。我们开发了一种方法，将这些金属化暴露在稀乙酸中，其浓度与在现场和潮湿的热暴露模块中发现的浓度相当。我们发现HT Ag和RSI仅在24小时后就受到醋酸的快速影响。有趣的是，拉曼光谱表明，在稀释的乙酸中，HT Ag糊状物上形成AgCl或AgCH3COO, AgCH3COO从RSI中溶解，而LT Ag糊状物在2936小时内保持相对不变。
{"title":"Reactive Silver Ink as a Novel Low-Temperature Metallization: Monitoring Corrosion","authors":"A. Jeffries, M. Bertoni","doi":"10.1109/PVSC.2018.8548247","DOIUrl":"https://doi.org/10.1109/PVSC.2018.8548247","url":null,"abstract":"Reactive silver ink (RSI) forms low-resistivity (<5μΩ.cm) metallization at temperatures below 100 °C-enabling lower resistive losses for thermally sensitive solar cells while drastically reducing Ag usage compared to other low-temperature Ag pastes. However, before adoption of the technology many reliability related questions must be addressed. Ag-based metallizations are susceptible to corrosion by acetic acid formed in encapsulated modules, resulting in increased resistive losses. Here we report on corrosion of three types of metallizations; high-firing-temperature Ag paste (HT Ag Paste), low-temperature Ag paste (LT Ag Paste), and RSI. We develop a method for exposing these metallizations to dilute acetic acid in concentrations comparable to those found in field- and damp heat-exposed modules. We find that HT Ag and RSI are quickly affected by acetic acid exposure after only 24 h. Interestingly, Raman spectroscopy suggests the formation of AgCl or AgCH3COO on HT Ag Paste, dissolution of AgCH3COO from RSI, and LT Ag Paste remains relatively unchanged throughout 2936 h of exposure to diluted acetic acid.","PeriodicalId":6558,"journal":{"name":"2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC)","volume":"199 1","pages":"1013-1017"},"PeriodicalIF":0.0,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90818547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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