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2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)最新文献

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Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes 28nm FDSOI和28nm LP CMOS节点中高性能数字应用的热载流子和BTI损伤区分
A. Bravaix, M. Saliva, F. Cacho, X. Federspiel, C. Ndiaye, S. Mhira, E. Kussener, E. Pauly, V. Huard
We use dedicated test structures for high performance low power (LP) CMOS nodes designed with 28nm FDSOI and 28nm LP devices. These allow to distinguish AC high frequency dependence as a function of high temperature (125°C) experiments for Bias Temperature Instability (BTI) and Hot-Carrier Damage (HCD) (1) for inverter chains (buffers) and logic gates in order to obtain AC-DC ratios (2) in standard logic gate paths for timing degradation with activity as a variable. This shows that NBTI remains the worst-case of damage at high temperature with a frequency independence due to the limited effect of relaxation with activity lowering (ton/toff) while HCD still represents a significant damage contribution at lower temperature due to the frequency and pulse shape dependences during transients. An accurate quantitative analysis is checked in a data path example with ELDO simulations that distinguishes each contribution.
我们使用专用的测试结构来测试采用28nm FDSOI和28nm LP器件设计的高性能低功耗(LP) CMOS节点。这些允许区分交流高频依赖作为高温(125°C)实验的函数,用于偏置温度不稳定性(BTI)和逆变器链(缓冲器)和逻辑门的热载流子损伤(HCD)(1),以便在标准逻辑门路径中获得交流-直流比(2),用于以活度为变量的时序退化。这表明NBTI在高温下仍然是频率无关的最坏损伤,因为随着活性降低(吨/关)的弛豫影响有限,而HCD在低温下仍然是显著的损伤贡献,因为瞬态期间的频率和脉冲形状依赖。在数据路径示例中进行了精确的定量分析,并使用ELDO模拟来区分每个贡献。
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引用次数: 3
A high performance scan flip-flop design for serial and mixed mode scan test 用于串行和混合模式扫描测试的高性能扫描触发器设计
Satyadev Ahlawat, Jaynarayan T. Tudu, A. Matrosova, Virendra Singh
Over the years, serial scan design has became the defacto Design for Testability (DFT) technique. The ease of testing and high test coverage has made it to gain wide spread industrial acceptance. However, there are associated penalties with serial scan. These penalties include performance degradation, test data volume, test application time, and test power dissipation. The performance overhead of scan design is due to the scan multiplexers added to the inputs of every flip-flop. In today's very high speed designs with minimum possible combinational depth, the performance degradation caused by scan multiplexer has became magnified. Hence to maintain the circuit performance the timing overhead of scan design must be addressed. In this paper we propose a new scan flip-flop design that eliminates the performance overhead of serial scan. The proposed design removes the scan multiplexer off the functional path. The proposed design can help in improving the functional frequency of performance critical designs. Furthermore, the proposed design can be used as a common scan flip-flop in mixed mode scan test wherein it can be used as a serial scan cell as well as random access scan RAS) cell.
多年来,串行扫描设计已经成为事实上的可测试性设计(DFT)技术。易于测试和高测试覆盖率使其获得广泛的工业认可。然而,串行扫描有相关的惩罚。这些代价包括性能下降、测试数据量、测试应用程序时间和测试功耗。扫描设计的性能开销是由于扫描多路复用器添加到每个触发器的输入。在当今以最小可能的组合深度进行非常高速的设计中,扫描多路复用器引起的性能下降已经变得越来越大。因此,为了保持电路的性能,必须解决扫描设计的时序开销。本文提出了一种新的扫描触发器设计,消除了串行扫描的性能开销。所提出的设计将扫描多路复用器从功能路径上移除。提出的设计有助于提高性能关键设计的功能频率。此外,所提出的设计可以用作混合模式扫描测试中的公共扫描触发器,其中它可以用作串行扫描单元以及随机访问扫描(RAS)单元。
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引用次数: 9
On-line write margin estimator to monitor performance degradation in SRAM cores 在线写余量估计器监测SRAM内核的性能退化
B. Alorda, C. Carmona, G. Torrens, S. Bota
SRAM cell sensitivity to process variation increases aggressively with technology scaling trends. Long-term aging parameter variability degrades 6T-SRAM cells performance in the nanometre era. More accurate and non-invasive methodologies must be provided to extend the free-failure period for high reliability systems. This paper proposes a Word-Line Voltage Margin estimator to observe SRAM performance degradation. The proposed on-line estimator approach does not require memory array modification and it can be shared with all embedded memories in a SoC reducing its area overhead.
SRAM单元对工艺变化的敏感性随着技术的规模化趋势而急剧增加。在纳米时代,长期老化参数变化会降低6T-SRAM电池的性能。必须提供更准确和非侵入性的方法来延长高可靠性系统的无故障期。本文提出了一种字行电压裕度估计器来观察SRAM的性能下降。所提出的在线估计方法不需要修改存储器阵列,并且可以与SoC中的所有嵌入式存储器共享,从而减少了其面积开销。
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引用次数: 14
ACM: Accurate crosstalk modeling to predict channel delay in Network-on-Chips 准确的串扰建模以预测片上网络中的信道延迟
Zeinab Mahdavi, Z. Shirmohammadi, S. Miremadi
The severity of timing delay in the communication channels of Network on Chip (NoC) depends on the transition patterns appearing on the wires. An analytical model can estimate the timing delay in NoC channels in the presence of crosstalk faults. However, recently proposed analytical model does not have enough accuracy and is based on 3-wire delay model. In this paper, an Accurate Crosstalk Model (ACM) based on 5-wire delay model is proposed to estimate the delay of communication channels in the presence of crosstalk faults. ACM is more accurate due to considering more wires in the delay model and also considering the overlaps between locations of transition patterns.
片上网络(Network on Chip, NoC)通信信道中时序延迟的严重程度取决于导线上出现的转换模式。一个解析模型可以估计存在串扰故障时NoC信道的时延。然而,目前提出的分析模型基于3线延迟模型,精度不够。本文提出了一种基于5线延迟模型的精确串扰模型(ACM),用于估计存在串扰故障时通信信道的延迟。由于在延迟模型中考虑了更多的导线,并且考虑了过渡模式位置之间的重叠,ACM更加准确。
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引用次数: 7
Analysis of BTI aging of level shifters 调位器BTI老化分析
Jiajing Cai, Basel Halak, Daniele Rossi
This paper provides a comprehensive evaluation of the effects of Bias Temperature Instability (BTI) aging on the delay of level shifters. The latter are indispensable blocks in energy efficient systems with multiple supply voltages. Our results show that conventional level-up shifters exhibit significantly more aging-induced delay degradation compared to standard logic cells. Our experiments performed in a predictive 32nm technology indicate those designs can suffer from more than 200% increase in their delay after 5 years due to BTI aging compared to an average of 20% delay rise in the case of standard CMOS logic. Our investigations show that the reason behind this phenomenon is the differential signaling structure present in the majority of conventional level up shifters, combined with the use of low supply voltages.
本文综合评价了偏置温度不稳定性(BTI)老化对移电平器延迟的影响。后者是具有多种电源电压的节能系统中不可或缺的模块。我们的研究结果表明,与标准逻辑单元相比,传统的调平移位器表现出明显更多的老化引起的延迟退化。我们在预测32nm技术中进行的实验表明,由于BTI老化,这些设计在5年后的延迟可能会增加200%以上,而在标准CMOS逻辑的情况下,延迟平均增加20%。我们的研究表明,这一现象背后的原因是差分信号结构存在于大多数传统的电平上移器,结合使用低电源电压。
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引用次数: 5
A fault-tolerant sequential circuit design for SAFs and PDFs soft errors 一种针对saf和pdf软错误的容错顺序电路设计
A. Matrosova, S. Ostanin, I. Kirienko, E. Nikolaeva
This paper presents a fault-tolerant synchronous sequential circuit design based on self-checking system with low overhead. The scheme has a self-checking sequential circuit, a not self-testing checker and a normal (unprotected) sequential circuit. It is proved the reliability properties of the suggested scheme both for single stuck-at faults at gate poles and path delay faults transient and intermittent.
本文提出了一种基于低开销自检系统的容错同步顺序电路设计。该方案具有自检顺序电路、非自检检查器和正常(未保护)顺序电路。验证了该方案在栅极单卡故障和暂态间歇路径延迟故障下的可靠性。
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引用次数: 4
A hybrid self-diagnosis mechanism with defective nodes locating and attack detection for parallel computing systems 并行计算系统缺陷节点定位与攻击检测的混合自诊断机制
Lake Bu, M. Karpovsky
In recent years parallel computing has been widely employed for both science research and commercial applications. For parallel systems such as many-core or computer clusters, it is inevitable to have one or more computing node failures due to random errors or injected attacks. Usually a diagnosis mechanism is able to locate several defective nodes through a number of tests and the analysis of those test signatures (syndromes). Although this covers the cases caused by random errors, sophisticated attacks are still able to manipulate the outputs of each node, so that they will be masked and pass the diagnosis. Therefore in this paper we propose a hybrid self-diagnosis mechanism. We adopt a new type of analysis with the linear syndromes, which are able to locate up to a certain number of defective nodes caused by random errors. In addition to this, we introduce a new type of robust analysis of the non-linear syndromes, which is capable of detecting the attacks undetectable by the linear syndromes at a probability close to one. Moreover, since this hybrid self-diagnosis mechanism is on the data level which makes little distinction among different operating systems and programming languages, it can be migrated onto any other platforms conveniently.
近年来,并行计算在科学研究和商业应用中得到了广泛的应用。对于多核或计算机集群这样的并行系统,由于随机错误或注入攻击导致一个或多个计算节点失效是不可避免的。通常,一种诊断机制能够通过一系列测试和对这些测试特征(综合征)的分析来定位几个缺陷节点。虽然这涵盖了由随机错误引起的情况,但复杂的攻击仍然能够操纵每个节点的输出,以便掩盖它们并通过诊断。因此,本文提出了一种混合自诊断机制。我们采用了一种新的线性综合征分析方法,它可以定位到一定数量的随机误差引起的缺陷节点。除此之外,我们还引入了一种新型的非线性综合征鲁棒分析,它能够以接近1的概率检测出线性综合征无法检测到的攻击。此外,由于这种混合自诊断机制是在数据级别上的,对不同的操作系统和编程语言几乎没有区别,因此可以方便地移植到任何其他平台上。
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引用次数: 5
Hardware enlightening: No where to hide your Hardware Trojans! 硬件启蒙:没有地方隐藏你的硬件木马!
Mohammad Saleh Samimi, Ehsan Aerabi, Z. Kazemi, M. Fazeli, A. Patooghy
IC design and manufacturing chains show steadily growing complexity which provides different third party roles in between. Reprobate parties can take the opportunity to steal a client's IP or insert their malicious circuits-Hardware Trojans-in the original client's design and trigger them in case of need. Trojans are usually inserted in the most hidden internal signals with the lowest activity which increase their chance for not being activated and revealed by clients or end-users. In this paper we propose a method to reduce the number of signals with low activity and hence the chance of inserting hidden trojans. This method is based on an enhanced Logic Encryption approach and uses a 128-bit key. Encryption can also secure the design against IP piracy. Simulation results show that the proposed method can eliminate 83.17% of low activity signals in the circuit.
集成电路设计和制造链显示出稳步增长的复杂性,这在两者之间提供了不同的第三方角色。恶意方可以借此机会窃取客户端的IP或在原始客户端的设计中插入恶意电路(硬件木马),并在需要时触发它们。木马通常插入到最隐蔽的内部信号中,活动最少,这增加了它们不被客户或最终用户激活和发现的机会。在本文中,我们提出了一种方法来减少低活动信号的数量,从而减少插入隐藏木马的机会。该方法基于增强的逻辑加密方法,并使用128位密钥。加密还可以保护设计免受IP盗版。仿真结果表明,该方法可消除电路中83.17%的低活度信号。
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引用次数: 20
Feasibility of software-based repair for program memories 基于软件的程序存储器修复的可行性
Patryk Skoncej, F. Mühlbauer, Felix Kubicek, Lukas Schröder, Mario Schölzel
In this paper we evaluate the feasibility of software-based repair for program (NOR flash) memories in tiny embedded systems. Often, in such systems, it is very typical that not the full memory area is used by the application. This paper proposes a software-based self-repair for program memories which utilizes this inherently available redundancy. Our techniques combine application adaptation in respect to faulty memory words and protection of the adapted application with error-correcting code. With our approach we address post-production memory faults and retention- and radiation-related memory faults which can occur in the field. The evaluation of our repair mechanisms was based on the results from post-production and after burn-in tests performed on real 32 and 64 KByte flash memory devices.
本文评估了微型嵌入式系统中基于软件修复程序(NOR闪存)存储器的可行性。通常,在这样的系统中,应用程序没有使用完整的内存区域是非常典型的。本文提出了一种基于软件的程序存储器自修复方法,该方法利用了程序存储器固有的冗余性。我们的技术结合了针对错误记忆词的应用程序适应和使用纠错代码保护适应后的应用程序。通过我们的方法,我们解决了在现场可能发生的后期记忆故障以及与保留和辐射相关的记忆故障。我们对修复机制的评估是基于在真正的32和64 KByte闪存设备上进行的后期和烧坏后测试的结果。
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引用次数: 2
Power-side-channel analysis of carbon nanotube FET based design 基于功率侧通道分析的碳纳米管场效应管设计
Chandra K. H. Suresh, Bodhisatwa Mazumdar, Subidh Ali, O. Sinanoglu
Continuous scaling of CMOS technology beyond sub-nanometer region has aggravated short-channel effects, resulting in increased leakage current and high power densities. Furthermore, elevated leakage current and power density render CMOS based security-critical applications vulnerable to power-side-channel attacks. Carbon Nanotubes (CNT) is a promising alternative to CMOS technology. It offers superior transport properties, excellent thermal conductivities, high current capacities, and low power densities. Besides area, power and performance, adherence to hardware security aspects have become an important criteria today. In this work, we present the first study on power-side-channel analysis of ciphers implemented using CNTFETs. Our simulation results show that for 130 power traces, the simple power analysis (SPA) attack success rate is less than 0.35 for CNTFET based ciphers, whereas it is greater than 0.95 for CMOS based ciphers. For correlation power analysis, the difference of correlation coefficient of the correct key and closest wrong key guess is 1.3 for CMOS based design, and less than 0.56 for CNTFET based ciphers for 20,000 power traces, which implies lesser distinguishability of correct key in case of CNTFETs. These results indicate that CNT offers a higher resilience to power-side-channel attacks than CMOS.
CMOS技术在亚纳米区域以外的持续缩放加剧了短通道效应,导致泄漏电流增加和功率密度高。此外,高泄漏电流和功率密度使得基于CMOS的安全关键应用容易受到功率侧通道攻击。碳纳米管(CNT)是一种很有前途的CMOS技术替代品。它具有优越的传输性能,优异的导热性,高电流容量和低功率密度。除了面积、功率和性能之外,遵守硬件安全方面已成为当今的重要标准。在这项工作中,我们首次研究了使用cntfet实现的密码的功率侧信道分析。仿真结果表明,对于130个功率走线,基于CNTFET的密码的简单功率分析(SPA)攻击成功率小于0.35,而基于CMOS的密码的简单功率分析(SPA)攻击成功率大于0.95。在相关功率分析中,基于CMOS设计的正确密钥与最接近的错误密钥的相关系数之差为1.3,而基于CNTFET的2万个功率走线密码的相关系数之差小于0.56,这意味着在CNTFET的情况下正确密钥的可分辨性较低。这些结果表明,碳纳米管比CMOS具有更高的抗功率侧信道攻击能力。
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引用次数: 2
期刊
2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)
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