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2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)最新文献

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Online monitoring of the maximum angle error in AMR sensors AMR传感器最大角度误差的在线监测
Andreina Zambrano, H. Kerkhoff
Anisotropic Magnetoresistance (AMR) sensors are often used for angle measurements. The sensor outputs consist of two sinusoidal signals that show undesired characteristics as offset voltage, amplitude imbalance and harmonics, which affect the angle measurements. These parameters change due to aging effects, but until now it is considered that these variations do not affect the sensor accuracy. The largest sources of angle error are compensated at the start of the sensor life but they are not monitored during its lifetime. However, the accuracy requirements are increasing and in the future, it will be necessary to verify that the sensor satisfies the accuracy despite aging. This research proposes different equations that are useful to monitor online the maximum angle error due to different sources. Based on this information it is possible to take action in order to guaranty the accuracy during the entire sensor lifetime.
各向异性磁阻(AMR)传感器常用于角度测量。传感器输出由两个正弦信号组成,这些信号表现出失调电压、幅值不平衡和谐波等不良特性,影响角度测量。这些参数由于老化效应而变化,但到目前为止,人们认为这些变化不会影响传感器的精度。角度误差的最大来源在传感器寿命开始时进行补偿,但在其寿命期间不进行监测。然而,精度要求越来越高,在未来,有必要验证传感器是否满足精度,尽管老化。本研究提出了不同的方程,可用于在线监测不同来源引起的最大角度误差。根据这些信息,可以采取行动,以保证在整个传感器寿命期间的准确性。
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引用次数: 3
Revisiting software-based soft error mitigation techniques via accurate error generation and propagation models 通过精确的错误生成和传播模型重新审视基于软件的软错误缓解技术
Mojtaba Ebrahimi, Maryam Rashvand, Firas Kaddachi, M. Tahoori, G. D. Natale
Radiation-induced soft errors are growing reliability concerns, especially in mission- and safety-critical systems. A variety of software-based fault tolerant techniques have widely been proposed and used to mitigate soft errors at the application-level. Such techniques are typically evaluated using statistical fault injection at software-visible variables of the system as fault injection at higher levels of abstraction is much faster than logic-level or Register Transfer Level (RTL). Recent studies revealed that software-based fault injection techniques are not accurate for analyzing soft errors originating in flip-flops. However, the effectiveness of such techniques for evaluation of the entire processor including register-files and cache arrays are not studied yet. In this paper, we comprehensively study the soft error rate of several workloads and their protected version using software-based fault tolerance by performing detailed error generation and propagation analysis at hardware-level. Our detailed experimental analysis shows that there is no significant correlation between the results of hardware- and software-based fault injection for the effectiveness of software-based fault tolerance. Furthermore, software-based fault injection cannot accurately model the relative improvement provided by fault tolerant software implementation, and hence, its results could be misleading.
辐射引起的软误差日益引起人们对可靠性的关注,特别是在任务和安全关键系统中。各种基于软件的容错技术已被广泛提出并用于减轻应用程序级别的软错误。这些技术通常使用系统软件可见变量的统计错误注入进行评估,因为更高抽象级别的错误注入比逻辑级别或寄存器传输级别(RTL)快得多。近年来的研究表明,基于软件的故障注入技术在分析触发器软错误时并不准确。然而,这些技术对整个处理器(包括寄存器文件和缓存数组)评估的有效性尚未得到研究。本文通过在硬件层面进行详细的错误生成和传播分析,利用基于软件的容错技术,全面研究了几种工作负载及其受保护版本的软错误率。详细的实验分析表明,基于硬件和基于软件的故障注入的结果对基于软件的容错有效性没有显著的相关性。此外,基于软件的故障注入不能准确地模拟容错软件实现所提供的相对改进,因此,其结果可能具有误导性。
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引用次数: 3
Cache-aware reliability evaluation through LLVM-based analysis and fault injection 基于llvm分析和故障注入的缓存感知可靠性评估
Maha Kooli, G. D. Natale, A. Bosio
Reliability evaluation is a high costly process that is mainly carried out through fault injection or by means of analytical techniques. While the analytical techniques are fast but inaccurate, the fault injection is more accurate but extremely time consuming. This paper presents an hybrid approach combining analytical and fault injection techniques in order to evaluate the reliability of a computing system, by considering errors that affect both the data and the instruction cache. Compared to existing techniques, instead of targeting the hardware model of the cache (e.g., VHDL description), we only consider the running application (i.e., the software layer). The proposed approach is based on the Low-Level Virtual Machine (LLVM) framework coupled with a cache emulator. As input, the tool requires the application source code, the cache size and policy, and the target microprocessor instruction set. The main advantage of the proposed approach is the achieved speed up quantified in magnitude orders compared to existing fault injection techniques. For the validation, we compare the simulation results to those obtained with an FPGA-based fault injector. The similarity of the results proves the accuracy of the approach.
可靠性评估是一个昂贵的过程,主要通过故障注入或分析技术进行。虽然分析技术快速但不准确,但断层注入更准确,但非常耗时。本文提出了一种结合分析技术和故障注入技术的混合方法,通过考虑同时影响数据和指令缓存的错误来评估计算系统的可靠性。与现有技术相比,我们不针对缓存的硬件模型(如VHDL描述),而是只考虑运行的应用程序(即软件层)。该方法基于低级别虚拟机(LLVM)框架和缓存模拟器。作为输入,该工具需要应用程序源代码、缓存大小和策略以及目标微处理器指令集。与现有的断层注入技术相比,该方法的主要优点是实现了以数量级量化的速度。为了验证,我们将仿真结果与基于fpga的故障注入器的仿真结果进行了比较。结果的相似性证明了该方法的准确性。
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引用次数: 12
Leakage mitigation for low power microcontroller design in 40nm for Internet-of-Things (IoT) 用于物联网(IoT)的40nm低功耗微控制器设计的泄漏缓解
A. Kapoor, N. Engin, J. Verdaasdonk
Modern systems for ubiquitous computing domains such as Internet-of-things (IoT), wearable computing etc. are characterized by low duty cycle, low operating and stand by power consumption requirements. The design of such systems is further constrained by increasing leakages due to technology scaling and/or increased data retention requirements. These conflicting requirements make leakage reduction of digital logic and SRAM a primary objective for efficient system realization. In this work, we discuss the effectiveness of advance leakage reduction techniques in 40nm (HYT technology) for SRAM and digital logic. For SRAM memory, adding error correction coding (ECC) to the memory subsystem can provide new trade-offs which will be advantageous for these low-duty cycle systems. We show that decreasing the data retention voltage while preventing errors using ECC will help decrease the leakage current by 45% (leakage power by 70% for SRAM). For the digital logic, test and simulation data shows that reverse body biasing (RBB) can reduce the logic leakage current by ~3x in the worst case process and temperature conditions. However, it should be carefully implemented as RBB causes increase in leakage current at nominal temperatures due to higher junction currents. Moreover, the asymmetric biasing where PMOS is biased by 0.7V and NMOS by 0.3V provides optimum results. RBB can also help reducing the switching energy at low frequency due to increased contribution of leakage to total energy compare to conventional technologies. We also show that increasing the gate length by 20% can help reduce the leakage current by 2x while there is minimal penalty on dynamic power and speed. Combining the asymmetric RBB application and increased gate-length can result in ~6x leakage reduction.
物联网(IoT)、可穿戴计算等普适计算领域的现代系统具有低占空比、低运行和待机功耗要求的特点。由于技术扩展和/或数据保留要求的增加,这种系统的设计受到进一步的限制。这些相互冲突的要求使得减少数字逻辑和SRAM的泄漏成为有效实现系统的首要目标。在这项工作中,我们讨论了先进的40nm泄漏减少技术(HYT技术)对SRAM和数字逻辑的有效性。对于SRAM存储器,在存储器子系统中加入纠错编码(ECC)可以提供新的折衷方案,这将有利于这些低占空比系统。我们表明,在使用ECC防止错误的同时降低数据保留电压将有助于降低45%的泄漏电流(SRAM的泄漏功率降低70%)。对于数字逻辑,测试和仿真数据表明,在最坏的工艺和温度条件下,反向体偏置(RBB)可以将逻辑泄漏电流降低约3倍。然而,由于较高的结电流,RBB在标称温度下会导致泄漏电流增加,因此应谨慎实施。此外,PMOS偏置0.7V, NMOS偏置0.3V的非对称偏置提供了最佳效果。与传统技术相比,由于泄漏对总能量的贡献增加,RBB还可以帮助减少低频开关能量。我们还表明,将栅极长度增加20%可以帮助将泄漏电流减少2x,同时对动态功率和速度的影响最小。结合非对称RBB应用和增加栅极长度可以使泄漏减少约6倍。
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引用次数: 1
Analytic models for crossbar read operation 横杆读取操作的解析模型
Adedotun Adeyemo, Xiaohan Yang, Anu Bala, J. Mathew, A. Jabir
Resistive memories have simpler structures and are capable of producing highly dense memory through crossbar architecture without the use of access devices. Reliability however remains a problem of resistive memories especially in its basic read operation. This paper presents a comprehensive model for resistive devices in crossbar array as well as models for four crossbar read schemes. These models are non-restrictive and are suitable for accurate analytical analysis of crossbar arrays and the evaluation of their performance during read operation.
电阻式存储器具有更简单的结构,并且能够在不使用存取器件的情况下通过横条结构产生高密度存储器。然而,电阻式存储器的可靠性仍然是一个问题,特别是在其基本读取操作方面。本文给出了一种综合的交叉棒阵列电阻器件模型,以及四种交叉棒读取方案的模型。这些模型不受约束,适用于交叉棒阵列的精确分析和读操作时的性能评估。
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引用次数: 0
An odd-even scheme to prevent a packet from being corrupted and dropped in fault tolerant NoCs 在容错noc中防止数据包损坏和丢失的奇偶方案
B. Bhowmik, S. Biswas, J. Deka
Packet corruption, misrouting, and dropping have become an extra burden on network performances due to stuck-at and open faults on network-on-chip (NoC) interconnects. Existing works for testing interconnect faults have addressed either shorts and/or stuck-ats with the assumption that the opens do not exist on interconnects. A new distributed test scheme that addresses coexistent stuck-at and open faults on NoC interconnects is proposed. The scheme is governed by a set of odd/even router and cores and takes account of testing of a subset of interconnects in turn. Results achieve 100% fault coverage in terms of packets received and dropped, and test coverage in terms of link-wires tested. Results also show evaluation of different performance metrics affected by the faulty links in a NoC.
由于片上网络(NoC)互连中的卡故障和开放故障,数据包损坏、路由错误和丢失已经成为网络性能的额外负担。现有的互连故障测试工作都是在假设互连上不存在开路的情况下解决短路和/或卡死问题。提出了一种新的分布式测试方案,用于解决NoC互连中同时存在的卡断和开断故障。该方案由一组奇/偶路由器和核心控制,并考虑轮流对互连子集进行测试。就接收和丢弃的数据包而言,结果达到100%的故障覆盖率,就测试的链路而言,测试覆盖率达到100%。结果还显示了受NoC中故障链接影响的不同性能指标的评估。
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引用次数: 7
Evaluation of machine learning algorithms for image quality assessment 评估用于图像质量评估的机器学习算法
Ghislain Takam Tchendjou, Rshdee Alhakim, E. Simeu, F. Lebowsky
In this article, we apply different machine learning (ML) techniques for building objective models, that permit to automatically assess the image quality in agreement with human visual perception. The six ML methods proposed are discriminant analysis, k-nearest neighbors, artificial neural network, non-linear regression, decision tree and fuzzy logic. Both the stability and the robustness of designed models are evaluated by using Monte-Carlo cross-validation approach (MCCV). The simulation results demonstrate that fuzzy logic model provides the best prediction accuracy.
在本文中,我们应用不同的机器学习(ML)技术来构建客观模型,允许自动评估与人类视觉感知一致的图像质量。提出了判别分析、k近邻、人工神经网络、非线性回归、决策树和模糊逻辑等六种机器学习方法。采用蒙特卡罗交叉验证方法对设计模型的稳定性和鲁棒性进行了评价。仿真结果表明,模糊逻辑模型具有较好的预测精度。
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引用次数: 7
Activity profiling: Review of different solutions to develop reliable and performant design 活动分析:审查不同的解决方案,以开发可靠和高性能的设计
F. Cacho, A. Benhassain, S. Mhira, A. Sivadasan, V. Huard, P. Cathelin, V. Knopik, A. Jain, C. Parthasarathy, L. Anghel
Reliability for advanced CMOS nodes is becoming very challenging. The trade-off between high performance and reliability requirement can no longer be addressed by rough extra-margin. It would results in an overdesign and strong penalty of performance and area. A fine-grain analysis of mission profile is the path toward accurate assessment of ageing. A wide review of methodologies and results are presented, they are applied to digital, analog and RF/mmW circuits. Important set of experimental results are shown and compared to simulation. This paper highlights the correlation between activity profiling or workload and degradation performance induced by ageing.
先进CMOS节点的可靠性正变得非常具有挑战性。高性能和可靠性需求之间的权衡不能再通过粗略的额外利润来解决。这将导致过度设计和严重的性能和面积损失。对任务轮廓的精细分析是准确评估老化的途径。对方法和结果进行了广泛的回顾,它们适用于数字,模拟和射频/毫米波电路。给出了一组重要的实验结果,并与仿真结果进行了比较。本文强调了活动分析或工作负载与老化引起的性能下降之间的相关性。
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引用次数: 0
Recovery of performance degradation in defective branch target buffers 在有缺陷的分支目标缓冲区中恢复性能退化
F. Filippou, G. Keramidas, Michail Mavropoulos, D. Nikolos
Dynamic voltage and frequency scaling (DVFS) is a commonly-used power-management technique. Unfortunately, voltage scaling increases the impact of process variations on memory cells reliability resulting in an exponential increase in the number of malfunctioning memory cells. In this work, we systematically investigate the behavior of branch target buffers (BTB) with faulty memory cells. Although being an intrinsically fault-tolerant unit (i.e., it does not affect correctness of the system), as we show in this work for several fault probabilities and core configurations, disabling the faulty parts of BTBs can damage the performance of the executing applications. To remedy the negative impact of malfunctioning BTB memory cells in contemporary BTB organizations, we present an ultra lightweight performance recovery mechanism. The proposed mechanism introduces minimal hardware overheads and practically-zero delays. Using cycle-accurate simulations, the benchmarks of SPEC2006 suite, a plethora of memory fault maps, and two fault probabilities corresponding to low supply voltages, we show the effectiveness of the proposed recovery mechanism.
动态电压和频率缩放(DVFS)是一种常用的电源管理技术。不幸的是,电压缩放增加了工艺变化对存储单元可靠性的影响,导致故障存储单元数量呈指数增长。在这项工作中,我们系统地研究了具有错误记忆细胞的分支目标缓冲区(BTB)的行为。尽管btb本质上是一个容错单元(即,它不影响系统的正确性),但正如我们在本工作中对几种故障概率和核心配置所展示的那样,禁用btb的故障部分可能会损害执行应用程序的性能。为了弥补当代BTB组织中故障BTB存储单元的负面影响,我们提出了一种超轻量级的性能恢复机制。所提出的机制引入了最小的硬件开销和几乎为零的延迟。通过周期精确的仿真、SPEC2006套件的基准测试、大量的存储器故障映射和对应于低电源电压的两个故障概率,我们证明了所提出的恢复机制的有效性。
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引用次数: 3
Conditional soft-edge flip-flop for SET mitigation 用于SET缓解的条件软边触发器
Panagiotis Sismanoglou, D. Nikolos
Single event transient (SET) pulses are a significant cause of soft errors in a circuit. To cope with SET pulses, we propose a new storage cell that is able to operate either as a hard-edge or soft-edge flip-flop depending on the appearance or not of a transition in a time window. The efficiency of the proposed design with respect to the reduction of soft-errors coming from SET pulses was shown with extensive simulations.
单事件瞬态(SET)脉冲是导致电路软误差的重要原因。为了应对SET脉冲,我们提出了一种新的存储单元,它能够根据时间窗口中过渡的出现或不出现而作为硬边或软边触发器运行。大量的仿真结果表明,该设计在减小SET脉冲产生的软误差方面是有效的。
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引用次数: 0
期刊
2016 IEEE 22nd International Symposium on On-Line Testing and Robust System Design (IOLTS)
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