Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481395
V. Hortelano, A. Torres, M. Sanz, J. Jiménez, O. Martínez, J. Landesman
InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.
{"title":"Intermixing in InAsP/InP quantum wells induced by dry etching processes","authors":"V. Hortelano, A. Torres, M. Sanz, J. Jiménez, O. Martínez, J. Landesman","doi":"10.1109/CDE.2013.6481395","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481395","url":null,"abstract":"InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"14 1","pages":"273-276"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90098467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481360
C. Aracil, F. Perdigones, A. Luque, J. Quero
A low-cost microfluidic impulsion system has been manufactured by a combination of SU-8 processing and PCB-MEMS technology. It is a driven pressure impulsion system, activated by an one-shot microvalve. The connection of pressurized chambers is achieved by means of the destruction of the microvalve, and the impulsion is performed. The connections to external pumps are then avoided. The proposed design also allows the integration between electronic and microfluidic elements. Benefits of a well-known processing technique, low-cost and its wide applications can be highlighted. The fabrication and evaluation of the system has been carried out with successful results. The device is intended to be integrated in Lab on a Chip (LOC) platform in order to achieve an autonomous device.
{"title":"Microfluidic impulsion system manufactured by PCB-MEMS for Lab on a Chip","authors":"C. Aracil, F. Perdigones, A. Luque, J. Quero","doi":"10.1109/CDE.2013.6481360","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481360","url":null,"abstract":"A low-cost microfluidic impulsion system has been manufactured by a combination of SU-8 processing and PCB-MEMS technology. It is a driven pressure impulsion system, activated by an one-shot microvalve. The connection of pressurized chambers is achieved by means of the destruction of the microvalve, and the impulsion is performed. The connections to external pumps are then avoided. The proposed design also allows the integration between electronic and microfluidic elements. Benefits of a well-known processing technique, low-cost and its wide applications can be highlighted. The fabrication and evaluation of the system has been carried out with successful results. The device is intended to be integrated in Lab on a Chip (LOC) platform in order to achieve an autonomous device.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"512 1","pages":"131-134"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77351023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481419
J. Rodríguez, M. Vetter, M. Fortes, C. Alberte, P. Otero
Nowadays it is possible to built a very fast spectral response (VFSR) measurement system by illuminating simultaneously the solar cell at multiple well defined wavelengths. This can be done by means of light emitting diodes (LEDs) available for a multitude of wavelengths, operating at different stimulation frequencies and analysis of the Fourier Transform of the generated solar cell current. For the purpose to measure the spectral response (SR) of silicon thin film solar cells a detailed characterization of LEDs emitting in the wavelength range from 300 nm to 1000 nm was performed. A VFSR equipment has been built implementing a selection of these LEDs and the difference of the short circuit current density (Jsc) determined from the SR with the VFSR results in about 1.8% in comparison to a conventional SR system with monochromator and lock-in amplifier technology. We have performed Jsc mappings in mini modules 10 cm × 10 cm with the VFSR system with the aim to show the potential and obstacles to perform Jsc mappings.
目前，通过在多个确定的波长同时照射太阳能电池，可以建立一个非常快速的光谱响应(VFSR)测量系统。这可以通过多种波长的发光二极管(led)来实现，在不同的刺激频率下工作，并分析产生的太阳能电池电流的傅里叶变换。为了测量硅薄膜太阳能电池的光谱响应(SR)，对发光二极管在300 nm至1000 nm波长范围内的发射进行了详细的表征。一个VFSR设备已经建立，实现了这些led的选择，与单色器和锁定放大器技术的传统SR系统相比，VFSR与SR测定的短路电流密度(Jsc)的差异约为1.8%。我们使用VFSR系统在10 cm × 10 cm的迷你模块中进行了Jsc映射，目的是展示执行Jsc映射的潜力和障碍。
{"title":"Development of a very fast spectral response measurement system for silicon thin film modules","authors":"J. Rodríguez, M. Vetter, M. Fortes, C. Alberte, P. Otero","doi":"10.1109/CDE.2013.6481419","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481419","url":null,"abstract":"Nowadays it is possible to built a very fast spectral response (VFSR) measurement system by illuminating simultaneously the solar cell at multiple well defined wavelengths. This can be done by means of light emitting diodes (LEDs) available for a multitude of wavelengths, operating at different stimulation frequencies and analysis of the Fourier Transform of the generated solar cell current. For the purpose to measure the spectral response (SR) of silicon thin film solar cells a detailed characterization of LEDs emitting in the wavelength range from 300 nm to 1000 nm was performed. A VFSR equipment has been built implementing a selection of these LEDs and the difference of the short circuit current density (Jsc) determined from the SR with the VFSR results in about 1.8% in comparison to a conventional SR system with monochromator and lock-in amplifier technology. We have performed Jsc mappings in mini modules 10 cm × 10 cm with the VFSR system with the aim to show the potential and obstacles to perform Jsc mappings.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"41 1","pages":"369-372"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77936694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481383
O. Fernández, Á. Gómez, J. Gutiérrez, A. Tazón, Á. Vegas, J. P. Pascual
In this paper the design of a high directivity antenna at terahertz regime for using in imaging applications and a chiral metamaterial cover, which enhances the radiation pattern of the antenna, are presented. The structure of the antenna is based on a linear array of planar patches fed by a distribution of slots working in W-band and it presents low cost and easy manufacture. On the other hand, the chiral metamaterial cover is constituted by two layers of mutually twisted planar metal rosettes in parallel planes suitable to operate in W-band. In order to compare the features of both designs, without and with the cover, numerical results of the radiation pattern of both structures are compared.
{"title":"Enhancement of the radiation properties of a linear array of planar antennas with a chiral metamaterial cover","authors":"O. Fernández, Á. Gómez, J. Gutiérrez, A. Tazón, Á. Vegas, J. P. Pascual","doi":"10.1109/CDE.2013.6481383","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481383","url":null,"abstract":"In this paper the design of a high directivity antenna at terahertz regime for using in imaging applications and a chiral metamaterial cover, which enhances the radiation pattern of the antenna, are presented. The structure of the antenna is based on a linear array of planar patches fed by a distribution of slots working in W-band and it presents low cost and easy manufacture. On the other hand, the chiral metamaterial cover is constituted by two layers of mutually twisted planar metal rosettes in parallel planes suitable to operate in W-band. In order to compare the features of both designs, without and with the cover, numerical results of the radiation pattern of both structures are compared.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"1 1","pages":"223-226"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78033309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481373
B. Bishnoi, S. Chishti, A. Verma, Akshaykumar Salimath, B. Ghosh
In this paper, we use semi classical Monte Carlo method to investigate Effect of electric field and temperature variability on spin polarized transport in SiGe nanowires (SiGeNWs) with Ge mole fraction of 0.2, 0.4, 0.6 and 0.8. We use a multi-subbands semi classical Monte Carlo approach to model spin dephasing. Monte Carlo simulations have been widely adopted to study electron transport in devices and have recently been used in conjunction with spin density matrix calculations to model spin transport. Spin dephasing in SiGe nanowires (SiGeNWs) is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. The components of ensemble averaged spin variation have been studied for SiGe nanowires (SiGeNWs) along the nanowires length. The effect of variation of electric field and temperature on spin dephasing length has been studied. It is found that variation of the electric field does not affect spin dephasing length significantly but spin dephasing length decrease as Ge mole fraction increases from 0.2 to 0.8 for the same value of electric field in SiGe nanowires (SiGeNWs). The effect of variation of temperature is more visible and as temperature increases from 10K to 300K spin dephasing length decrease due to dominant increase of acoustic phonon scattering and it decrease more dominantly for higher value of Ge mole fraction such as 0.8 compare to 0.2.
{"title":"Effect of electric field and temperature variability on spin dephasing in SiGe nanowires","authors":"B. Bishnoi, S. Chishti, A. Verma, Akshaykumar Salimath, B. Ghosh","doi":"10.1109/CDE.2013.6481373","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481373","url":null,"abstract":"In this paper, we use semi classical Monte Carlo method to investigate Effect of electric field and temperature variability on spin polarized transport in SiGe nanowires (SiGeNWs) with Ge mole fraction of 0.2, 0.4, 0.6 and 0.8. We use a multi-subbands semi classical Monte Carlo approach to model spin dephasing. Monte Carlo simulations have been widely adopted to study electron transport in devices and have recently been used in conjunction with spin density matrix calculations to model spin transport. Spin dephasing in SiGe nanowires (SiGeNWs) is caused due to D'yakonov-Perel (DP) relaxation and due to Elliott-Yafet (EY) relaxation. The components of ensemble averaged spin variation have been studied for SiGe nanowires (SiGeNWs) along the nanowires length. The effect of variation of electric field and temperature on spin dephasing length has been studied. It is found that variation of the electric field does not affect spin dephasing length significantly but spin dephasing length decrease as Ge mole fraction increases from 0.2 to 0.8 for the same value of electric field in SiGe nanowires (SiGeNWs). The effect of variation of temperature is more visible and as temperature increases from 10K to 300K spin dephasing length decrease due to dominant increase of acoustic phonon scattering and it decrease more dominantly for higher value of Ge mole fraction such as 0.8 compare to 0.2.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"3 1","pages":"183-186"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88855423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481421
E. García‐Hemme, R. García-Hernansanz, A. del Prado, G. González-Díaz, I. Mártil, J. Olea, D. Pastor, P. Wahnón
We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.
{"title":"Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material","authors":"E. García‐Hemme, R. García-Hernansanz, A. del Prado, G. González-Díaz, I. Mártil, J. Olea, D. Pastor, P. Wahnón","doi":"10.1109/CDE.2013.6481421","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481421","url":null,"abstract":"We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"os8 1","pages":"377-380"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88400808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481392
L. Diego, Y. Jato, C. Perez, A. Herrera
Lack of reliable inductor models at high frequencies in SiGe makes the design of certain microwave circuits a tiresome task. This paper presents the design process of a fully integrated 11.6 GHz BiCMOS VCO with a good compromise between phase noise, power consumption and area. Inductors are essential components in the VCO design and therefore must be carefully modeled. We propose the use of a three dimensional electromagnetic field simulator to characterize the silicon integrated planar inductor within the VCO. Simulation and measurement results demonstrate how the use of an accurate inductor model can significantly reduce the designing steps leading to a first time working silicon.
{"title":"CMOS VCO design optimization using reliable 3D electromagnetic inductor models","authors":"L. Diego, Y. Jato, C. Perez, A. Herrera","doi":"10.1109/CDE.2013.6481392","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481392","url":null,"abstract":"Lack of reliable inductor models at high frequencies in SiGe makes the design of certain microwave circuits a tiresome task. This paper presents the design process of a fully integrated 11.6 GHz BiCMOS VCO with a good compromise between phase noise, power consumption and area. Inductors are essential components in the VCO design and therefore must be carefully modeled. We propose the use of a three dimensional electromagnetic field simulator to characterize the silicon integrated planar inductor within the VCO. Simulation and measurement results demonstrate how the use of an accurate inductor model can significantly reduce the designing steps leading to a first time working silicon.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"1 1","pages":"261-264"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73001173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481365
P. Castrillo, J. M. Salgado
In this work, the operation of thermoelectric generators is analyzed within the framework of a circuital model. It is found that electric current-induced modification of the difference temperature gives rise to an effective electrical resistance. This effective resistance depends on thermal conductivities and has to be taken into account in the parameter extraction procedure.
{"title":"Effective electrical resistance due to current-induced heat flow in thermoelectric generators","authors":"P. Castrillo, J. M. Salgado","doi":"10.1109/CDE.2013.6481365","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481365","url":null,"abstract":"In this work, the operation of thermoelectric generators is analyzed within the framework of a circuital model. It is found that electric current-induced modification of the difference temperature gives rise to an effective electrical resistance. This effective resistance depends on thermal conductivities and has to be taken into account in the parameter extraction procedure.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"5 1","pages":"151-154"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73895397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481369
Y. Meziani, J. Velazquez-Perez, E. García-García, D. Coquillat, N. Dyakonova, W. Knap, I. Grigelionis, K. Fobelets
We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas along with photoresponse measurements were performed simultaneously to demonstrate that the observed response is related to the plasma waves oscillation in the channel. The device was cooled down to 4.2 K and resonant signature could be observed.
{"title":"Terahertz detection using Si-SiGe MODFETs","authors":"Y. Meziani, J. Velazquez-Perez, E. García-García, D. Coquillat, N. Dyakonova, W. Knap, I. Grigelionis, K. Fobelets","doi":"10.1109/CDE.2013.6481369","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481369","url":null,"abstract":"We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas along with photoresponse measurements were performed simultaneously to demonstrate that the observed response is related to the plasma waves oscillation in the channel. The device was cooled down to 4.2 K and resonant signature could be observed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"142 1","pages":"167-170"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76122181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481375
Akshaykumar Salimath, S. Chishti, A. Verma, B. Bishnoi, B. Ghosh
In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D'yakonov-Perel' relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm2 and 10×10 nm2.
{"title":"Monte Carlo simulation of temperature and confinement dependent spin transport in germanium nanowire","authors":"Akshaykumar Salimath, S. Chishti, A. Verma, B. Bishnoi, B. Ghosh","doi":"10.1109/CDE.2013.6481375","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481375","url":null,"abstract":"In this paper spin polarized transport in Ge nanowires is studied by employing semiclassical Monte Carlo approach. Monte Carlo [2] approach is used since it is able to update spin evolution dynamically in step with the momentum evolution due to electron transport. Spin dephasing in Ge nanowire is caused by D'yakonov-Perel' relaxation[3,4] due to structural inversion asymmetry (Rashba spin-orbit coupling). Spin flip due to Elliott-Yafet[3] is also taken into account in the simulation, Spin relaxation is investigated in germanium nanowire with varying temperature and varying confinement. Electrons are injected polarized in z direction. The wire cross section is varied between 2×2 nm2 and 10×10 nm2.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"22 1","pages":"191-194"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74145435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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