Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481349
M. Pa, F. Emami
Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.
{"title":"Static and dynamic characteristics of self-assembled InAs-GaAs quantum dot laser considering carrier recombination and carrier escape time by using circuit-level modeling","authors":"M. Pa, F. Emami","doi":"10.1109/CDE.2013.6481349","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481349","url":null,"abstract":"Considering the excited state and the standard rate equations, this study provides a new circuit model for self-assembled quantum dot laser made by InGaAs/GaAs and investigates the performances of this kind of laser. The carrier dynamic effects on static and dynamic performances of self-assembled laser (QD) have been analyzed. We also show that quantum-dot lasers are quite sensitive to the crystal quality outside as well as inside quantum dots.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"70 1","pages":"87-90"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89885200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481412
Ruilong Yang, Zhizhong Bai, Dezhao Wang, Deliang Wang
CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9 % was obtained for a 1-μm-thick CdTe solar cell. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency. Formation of mono-grain CdS layer with grain size in submicron was fabricated. Heat treatment of a CdS precursor layer coated with a CdCl2 layer and under a high CdCl2 vapor pressure reduced oxide formation at the grain surface and promoted grain coalescence. High crystalline quality mono-grain CdS layer ensured homogenous intermixing of CdS and CdTe at the CdS/CdTe interface. A saturated junction leakage current in the order of 10-10 A/cm2 and a short-circuit current as high as 25.1 cm/cm2 were obtained for a mono-grain-CdS/CdTe solar cell. The corresponding solar cell efficiency is 14.6%.
{"title":"High efficient thin film CdTe solar cells","authors":"Ruilong Yang, Zhizhong Bai, Dezhao Wang, Deliang Wang","doi":"10.1109/CDE.2013.6481412","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481412","url":null,"abstract":"CdTe thin film solar cell with an absorber layer as thin as 0.5 μm was fabricated. An efficiency of 7.9 % was obtained for a 1-μm-thick CdTe solar cell. The experimental results presented in this study demonstrated that 1-μm-thick absorber layer is thick enough to fabricate CdTe solar cell with a decent efficiency. Formation of mono-grain CdS layer with grain size in submicron was fabricated. Heat treatment of a CdS precursor layer coated with a CdCl2 layer and under a high CdCl2 vapor pressure reduced oxide formation at the grain surface and promoted grain coalescence. High crystalline quality mono-grain CdS layer ensured homogenous intermixing of CdS and CdTe at the CdS/CdTe interface. A saturated junction leakage current in the order of 10-10 A/cm2 and a short-circuit current as high as 25.1 cm/cm2 were obtained for a mono-grain-CdS/CdTe solar cell. The corresponding solar cell efficiency is 14.6%.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"1 1","pages":"341-344"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88173554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481415
B. Moralejo, A. Tejero, O. Martínez, M. González, J. Jiménez, V. Parra
Photoluminescence imaging technique has recently emerged as a powerful tool for obtaining very quick sorting of silicon based solar wafers and cells. In this work, we report on a low-cost photoluminescence imaging system, paying special attention to the different constituting elements. Results on both commercial multicrystalline (mc) and seed-monocast (sm) Si wafers and solar cells are discussed.
{"title":"Low-cost system for full-wafer photoluminescence characterization of photovoltaic silicon","authors":"B. Moralejo, A. Tejero, O. Martínez, M. González, J. Jiménez, V. Parra","doi":"10.1109/CDE.2013.6481415","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481415","url":null,"abstract":"Photoluminescence imaging technique has recently emerged as a powerful tool for obtaining very quick sorting of silicon based solar wafers and cells. In this work, we report on a low-cost photoluminescence imaging system, paying special attention to the different constituting elements. Results on both commercial multicrystalline (mc) and seed-monocast (sm) Si wafers and solar cells are discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"57 1","pages":"353-356"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86951424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481409
G. Masmitjà, Pedro A. Ortega, G. López, E. Calle, M. Garcia, I. Martín, A. Orpella, C. Voz, R. Alcubilla
In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.
{"title":"Boron diffused emitters passivated with Al2O3 films","authors":"G. Masmitjà, Pedro A. Ortega, G. López, E. Calle, M. Garcia, I. Martín, A. Orpella, C. Voz, R. Alcubilla","doi":"10.1109/CDE.2013.6481409","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481409","url":null,"abstract":"In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"8 1","pages":"329-332"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85353807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481382
J. Anaya, J. Jiménez, T. Rodríguez
Low dimensional semiconductor structures are very promising for thermoelectric conversion. In particular, the thermal conductivity of semiconductor nanowires (NWs) can be engineered in order to enhance the thermoelectric figure of merit. Modeling the thermal conductivity of NWs is a step forward to the design of advanced thermoelectric devices.
{"title":"Modelling the thermal conductivity of semiconductor NWs; a step forward to the increase of the thermoelectric figure of merit","authors":"J. Anaya, J. Jiménez, T. Rodríguez","doi":"10.1109/CDE.2013.6481382","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481382","url":null,"abstract":"Low dimensional semiconductor structures are very promising for thermoelectric conversion. In particular, the thermal conductivity of semiconductor nanowires (NWs) can be engineered in order to enhance the thermoelectric figure of merit. Modeling the thermal conductivity of NWs is a step forward to the design of advanced thermoelectric devices.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"313 1","pages":"219-222"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82158189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481391
E. Miranda, J. Suñé, T. Kawanago, K. Kakushima, H. Iwai
A simple analytic model for the post-breakdown conduction characteristics in W/La2O3/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (IG) as a function of the gate (VG) and drain (VD) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.
{"title":"Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors","authors":"E. Miranda, J. Suñé, T. Kawanago, K. Kakushima, H. Iwai","doi":"10.1109/CDE.2013.6481391","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481391","url":null,"abstract":"A simple analytic model for the post-breakdown conduction characteristics in W/La<sub>2</sub>O<sub>3</sub>/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (I<sub>G</sub>) as a function of the gate (V<sub>G</sub>) and drain (V<sub>D</sub>) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"25 1","pages":"257-260"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81116163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481327
F. Campabadal, J. M. Rafí, M. B. González, M. Zabala, O. Beldarrain, M. Acero, M. Duch
Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.
{"title":"Thin dielectric films grown by atomic layer deposition: Properties and applications","authors":"F. Campabadal, J. M. Rafí, M. B. González, M. Zabala, O. Beldarrain, M. Acero, M. Duch","doi":"10.1109/CDE.2013.6481327","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481327","url":null,"abstract":"Atomic layer deposition of high-k dielectrics is currently identified to be an enabling technology for a variety of applications. An overview of the characteristics of the technique is presented and its limiting factors and opportunities discussed. Particular attention is paid to Al2O3 and HfO2 films deposited on silicon in terms of material and electrical characteristics for their use in MEMS and radiation detectors technologies and the effects of post-deposition annealing processing are discussed.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"22 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87238995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481406
E. Fernández, A. Loureiro, P. Rodrigo, F. Almonacid, J. I. Fernández, P. J. P. Higueras, G. Almonacid
Knowledge of solar cell operating temperature is critical to evaluate the energy performance of a HCPV module. However, the measurement of the cell temperature in HCPV modules is a very complex task due to the special features of these types of modules, so it is useful to find indirect methods to calculate this. DNI, cell temperature and I-V curves have been measured for one year in the Centre of Advanced Studies in Energy and Environment of the University of Jaen located in the south of Spain. Thanks to these measurements, cell temperature can be determinate as a function of Voc with a mean relative error of -0.38 %.
{"title":"Calculation of cell temperature in a HCPV module using Voc","authors":"E. Fernández, A. Loureiro, P. Rodrigo, F. Almonacid, J. I. Fernández, P. J. P. Higueras, G. Almonacid","doi":"10.1109/CDE.2013.6481406","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481406","url":null,"abstract":"Knowledge of solar cell operating temperature is critical to evaluate the energy performance of a HCPV module. However, the measurement of the cell temperature in HCPV modules is a very complex task due to the special features of these types of modules, so it is useful to find indirect methods to calculate this. DNI, cell temperature and I-V curves have been measured for one year in the Centre of Advanced Studies in Energy and Environment of the University of Jaen located in the south of Spain. Thanks to these measurements, cell temperature can be determinate as a function of Voc with a mean relative error of -0.38 %.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"220 1","pages":"317-320"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89128617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-03-21DOI: 10.1109/CDE.2013.6481390
C. Palomar, I. Lopez-Calle, F. J. Franco, J. Agapito, J. G. Izquierdo
This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.
{"title":"Laser induced single events in SRAMs","authors":"C. Palomar, I. Lopez-Calle, F. J. Franco, J. Agapito, J. G. Izquierdo","doi":"10.1109/CDE.2013.6481390","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481390","url":null,"abstract":"This paper is aimed at emulating the errors in semiconductor memories by space radiation with a pulsed laser that acts as an ion. A sensitivity map of the memory is performed identifying potential error areas and how many errors simultaneously occur.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"66 1","pages":"253-256"},"PeriodicalIF":0.0,"publicationDate":"2013-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78180177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-01DOI: 10.1109/CDE.2013.6481347
S. García, B. G. Vasallo, J. Mateos, T. González
The time-domain operation of GaAs, InP and GaN vertical n+n-nn+ Gunn diodes and GaN planar self-switching diodes (SSDs) is numerically investigated by using the Monte Carlo (MC) technique. To this end, the MC simulation of the intrinsic devices is coupled with the consistent solution of a parallel RLC resonant circuit connected in series. We show that equivalent operating conditions can be achieved by the direct application of a sinusoidal AC voltage superimposed to the DC component. By virtue of the larger saturation velocity of GaN, for a given diode length, oscillation frequencies are higher than for GaAs and InP structures. Current oscillations at frequencies as high as 560 GHz, with a DC to AC conversion efficiency of 0.3%, are predicted at the third harmonic in 1 μm-long GaN diodes. In a 0.5 μm-long GaN SSD, frequencies up to 275 GHz with an efficiency of 0.2% can be achieved, with the advantage of enhanced heat dissipation thanks to the planar geometry.
{"title":"Time-domain Monte Carlo simulations of resonant-circuit operation of GaN Gunn diodes","authors":"S. García, B. G. Vasallo, J. Mateos, T. González","doi":"10.1109/CDE.2013.6481347","DOIUrl":"https://doi.org/10.1109/CDE.2013.6481347","url":null,"abstract":"The time-domain operation of GaAs, InP and GaN vertical n+n-nn+ Gunn diodes and GaN planar self-switching diodes (SSDs) is numerically investigated by using the Monte Carlo (MC) technique. To this end, the MC simulation of the intrinsic devices is coupled with the consistent solution of a parallel RLC resonant circuit connected in series. We show that equivalent operating conditions can be achieved by the direct application of a sinusoidal AC voltage superimposed to the DC component. By virtue of the larger saturation velocity of GaN, for a given diode length, oscillation frequencies are higher than for GaAs and InP structures. Current oscillations at frequencies as high as 560 GHz, with a DC to AC conversion efficiency of 0.3%, are predicted at the third harmonic in 1 μm-long GaN diodes. In a 0.5 μm-long GaN SSD, frequencies up to 275 GHz with an efficiency of 0.2% can be achieved, with the advantage of enhanced heat dissipation thanks to the planar geometry.","PeriodicalId":6614,"journal":{"name":"2013 Spanish Conference on Electron Devices","volume":"120 1","pages":"79-82"},"PeriodicalIF":0.0,"publicationDate":"2013-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86144853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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