Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751343
Zhichao Chen, Zhan Yang, Tao Chen, Lining Sun, T. Fukuda
This paper presented a method of growing metallic nanowires by using electron beam technology under scanning electron microscopy (SEM). The metallic nanoparticles were dispersed evenly on Indium-Tin Oxide (ITO) by the spin coater. The ITO sample was experimentally prepared by the spin coating technique. The electron beam was focused on a metallic nano particle inside SEM, which were dispersed on the ITO. The growth of metallic nanowires was controlled by the movement of the electron beam. The method this paper presented can be employed for different kinds of metallic and can be used to fabricate metallic nanowires with different length.
{"title":"Electron beam introduced metallic nanowires growth","authors":"Zhichao Chen, Zhan Yang, Tao Chen, Lining Sun, T. Fukuda","doi":"10.1109/NANO.2016.7751343","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751343","url":null,"abstract":"This paper presented a method of growing metallic nanowires by using electron beam technology under scanning electron microscopy (SEM). The metallic nanoparticles were dispersed evenly on Indium-Tin Oxide (ITO) by the spin coater. The ITO sample was experimentally prepared by the spin coating technique. The electron beam was focused on a metallic nano particle inside SEM, which were dispersed on the ITO. The growth of metallic nanowires was controlled by the movement of the electron beam. The method this paper presented can be employed for different kinds of metallic and can be used to fabricate metallic nanowires with different length.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"10 1","pages":"26-29"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72951685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751566
Arvind Kumar
Computing systems today are at the dawn of a new period in history: the cognitive era [1]. This transition is driven by the explosive growth in unstructured data enabled by new technology trends such as Social Media, the Internet of Things, and everywhere computing. Computing workloads are correspondingly shifting away from transactional processing and toward unstructured computational problems requiring fuzzier analysis such as sensing, learning, and inferring; detecting patterns and anomalies; and predicting and discovering.
{"title":"Nanotechnology requirements and challenges for large-scale brain computing","authors":"Arvind Kumar","doi":"10.1109/NANO.2016.7751566","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751566","url":null,"abstract":"Computing systems today are at the dawn of a new period in history: the cognitive era [1]. This transition is driven by the explosive growth in unstructured data enabled by new technology trends such as Social Media, the Internet of Things, and everywhere computing. Computing workloads are correspondingly shifting away from transactional processing and toward unstructured computational problems requiring fuzzier analysis such as sensing, learning, and inferring; detecting patterns and anomalies; and predicting and discovering.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"142 1","pages":"273-275"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74528869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751336
P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, D. Jena, S. Keller, Gerhard Klimeck
Future ultra-scaled logic and low-power systems require fundamental advances in semiconductor device technology. Due to power constraints, device concepts capable of achieving switching slopes (SS) steeper than 60 mV/decade are essential if scaling of conventional computational architectures is to continue. Likewise, ultra low power systems also benefit from devices capable of maintaining performance under low-voltage operation. Towards this end, tunneling field effect transistors (TFETs) are one promising alternative. While much work has been devoted to realizing TFETs in Si, Ge, and narrow-gap III-V materials, the use of III-N heterostructures and the exploitation of polarization engineering offers some unique opportunities. From physics-based simulations, performance of GaN/InGaN/GaN heterostructure TFETs appear capable of delivering average SS approaching 20 mV/decade over 4 decades of drain current, and on-current densities exceeding 100 μA/μm in aggressively scaled nanowire configurations. Experimental progress towards realizing III-N based TFETs includes demonstration of GaN/InGaN/GaN backward tunnel diodes by both MOCVD and MBE, and nanowires grown selectively by MBE and used as the basis for device fabrication.
{"title":"Novel III-N heterostructure devices for low-power logic and more","authors":"P. Fay, W. Li, L. Cao, K. Pourang, S. M. Islam, C. Lund, S. Saima, H. Ilatikhameneh, T. Amin, J. Huang, R. Rahman, D. Jena, S. Keller, Gerhard Klimeck","doi":"10.1109/NANO.2016.7751336","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751336","url":null,"abstract":"Future ultra-scaled logic and low-power systems require fundamental advances in semiconductor device technology. Due to power constraints, device concepts capable of achieving switching slopes (SS) steeper than 60 mV/decade are essential if scaling of conventional computational architectures is to continue. Likewise, ultra low power systems also benefit from devices capable of maintaining performance under low-voltage operation. Towards this end, tunneling field effect transistors (TFETs) are one promising alternative. While much work has been devoted to realizing TFETs in Si, Ge, and narrow-gap III-V materials, the use of III-N heterostructures and the exploitation of polarization engineering offers some unique opportunities. From physics-based simulations, performance of GaN/InGaN/GaN heterostructure TFETs appear capable of delivering average SS approaching 20 mV/decade over 4 decades of drain current, and on-current densities exceeding 100 μA/μm in aggressively scaled nanowire configurations. Experimental progress towards realizing III-N based TFETs includes demonstration of GaN/InGaN/GaN backward tunnel diodes by both MOCVD and MBE, and nanowires grown selectively by MBE and used as the basis for device fabrication.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"4 1","pages":"767-769"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74072436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751477
Takafumi Fujiwara, M. Nakajima, A. Ichikawa, K. Ohara, Y. Hasegawa, T. Fukuda
This paper presents a electrostatic actuation of multi-graphene which was folded by nanomanipulation for novel nano-gripper application. The development design of multi-graphene was initially fabricated by focused ion beam (FIB) process. The nanomanipulation system was used for folding and electrostatic actuation inside a FESEM (Field Emission Scanning Electron Microscope). The movement of multi-graphene was confirmed by electrostatic forces. The actuation was evaluated depending on the applied voltages.
{"title":"Electrostatic actuation of folded multi-graphene structure for nano-gripper","authors":"Takafumi Fujiwara, M. Nakajima, A. Ichikawa, K. Ohara, Y. Hasegawa, T. Fukuda","doi":"10.1109/NANO.2016.7751477","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751477","url":null,"abstract":"This paper presents a electrostatic actuation of multi-graphene which was folded by nanomanipulation for novel nano-gripper application. The development design of multi-graphene was initially fabricated by focused ion beam (FIB) process. The nanomanipulation system was used for folding and electrostatic actuation inside a FESEM (Field Emission Scanning Electron Microscope). The movement of multi-graphene was confirmed by electrostatic forces. The actuation was evaluated depending on the applied voltages.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"60 1","pages":"34-35"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84793078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751360
Tzy-Rong Lin, Shu-Yu Chang, Cong-Yuan Shih, Jheng-Hong Shih, T. Lu, J. Hsu
We investigate the enhancement of acousto-optic (AO) coupling using a Ag/GaAs heterogeneous phoxonic crystal nanobeam cavity. Because of the Ag layer, the cavity structure hybridizes surface plasmons and photons, squeezing the optical energy into a smaller region near the GaAs/Ag interface. The photonic cavity modes highly match the phononic cavity modes in space in the cavity. Because of the mode similarity, the AO coupling is stronger at near-infrared wavelengths. We show that the interface effect by the acoustic displacement field dominates the AO coupling enhancement. Small photonic mode volume and high spatial matching between the phononic and photonic cavity modes enhance the photonic resonance wavelength shift by one order of magnitude. The proposed structure enables applications of strong AO and photon-phonon interaction in subwavelength nanostructures.
{"title":"Acousto-optic coupling in phoxonic-plasmonic crystal nanobeam cavities","authors":"Tzy-Rong Lin, Shu-Yu Chang, Cong-Yuan Shih, Jheng-Hong Shih, T. Lu, J. Hsu","doi":"10.1109/NANO.2016.7751360","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751360","url":null,"abstract":"We investigate the enhancement of acousto-optic (AO) coupling using a Ag/GaAs heterogeneous phoxonic crystal nanobeam cavity. Because of the Ag layer, the cavity structure hybridizes surface plasmons and photons, squeezing the optical energy into a smaller region near the GaAs/Ag interface. The photonic cavity modes highly match the phononic cavity modes in space in the cavity. Because of the mode similarity, the AO coupling is stronger at near-infrared wavelengths. We show that the interface effect by the acoustic displacement field dominates the AO coupling enhancement. Small photonic mode volume and high spatial matching between the phononic and photonic cavity modes enhance the photonic resonance wavelength shift by one order of magnitude. The proposed structure enables applications of strong AO and photon-phonon interaction in subwavelength nanostructures.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"10 1","pages":"94-97"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85002032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751565
H. Hashim, Wu Lei, H. Maruyama, T. Masuda, F. Arai
Effective manipulation and rapid injection of nanosensor with high cell viability have great significance to biological and biomedical applications such as drug delivery and cells biology. This study presents manipulation of a magnetic nanosensor with a temperature indicator and immobilization onto cell surface using glass nanoprobe by Coulomb's force. The nanosensor is stained by Rhodamine B as the temperature indicator and is contained by lipid layer with Spiropyran (SP), which is a photochromic material. The zeta potential of nanosensor is switched between negative and positive by photo-isomerization of SP. The zeta potential of the liposome is switched to positive by UV illumination and recovered to negative by VIS illumination. The nanosensor is picked up and transported by glass nanoprobe. The positively charged nanosensor is immobilized to the cell membrane since the zeta potential of cell membrane is negative. The immobilized nanosensor can be injected into the cell cytoplasm by local laser heating. We demonstrated the manipulation and injection of the Ø750 nm magnetic nanosensor by the micromanipulator and local laser heating.
{"title":"Optical control of adhesion property of magnetic nanosensor using photochromism for effective manipulation and cell injection","authors":"H. Hashim, Wu Lei, H. Maruyama, T. Masuda, F. Arai","doi":"10.1109/NANO.2016.7751565","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751565","url":null,"abstract":"Effective manipulation and rapid injection of nanosensor with high cell viability have great significance to biological and biomedical applications such as drug delivery and cells biology. This study presents manipulation of a magnetic nanosensor with a temperature indicator and immobilization onto cell surface using glass nanoprobe by Coulomb's force. The nanosensor is stained by Rhodamine B as the temperature indicator and is contained by lipid layer with Spiropyran (SP), which is a photochromic material. The zeta potential of nanosensor is switched between negative and positive by photo-isomerization of SP. The zeta potential of the liposome is switched to positive by UV illumination and recovered to negative by VIS illumination. The nanosensor is picked up and transported by glass nanoprobe. The positively charged nanosensor is immobilized to the cell membrane since the zeta potential of cell membrane is negative. The immobilized nanosensor can be injected into the cell cytoplasm by local laser heating. We demonstrated the manipulation and injection of the Ø750 nm magnetic nanosensor by the micromanipulator and local laser heating.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"82 1","pages":"683-686"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85183271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751516
Muhammad Ali, Mohammad A. Ahmed, M. Chrzanowska-Jeske
The carbon nanotube field-effect transistor (CNFET) is a potential candidate to replace MOSFET due to advantages offered by CNFET such as its superior electrical, thermal, and mechanical properties. When designing circuits made of CNFETs, additional features such as the CNT number, positions and pitch in the array of tubes creating a transistor channel must be considered for performance evaluation. These features create additional challenges during simulation. In this paper, we analyze the effectiveness of CNFET Logical Effort (LE) model, to be used in place of simulation, for circuits with different topologies and CNFET technology (pitch) ranging from 2nm-30nm. We show that our delay evaluation tool using expanded LE model predicts delay for analyzed circuits with a very small average error of 2.15% as compared to SPICE simulations, and runs about 30 times faster. We have also evaluated our model in the presence of tube variations created by removal of unwanted metallic tubes. Our model closely correlated with Stanford SPICE model, developed for CNFET circuits, within 3%.
{"title":"Fast and accurate evaluation of delay in CNFET circuits","authors":"Muhammad Ali, Mohammad A. Ahmed, M. Chrzanowska-Jeske","doi":"10.1109/NANO.2016.7751516","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751516","url":null,"abstract":"The carbon nanotube field-effect transistor (CNFET) is a potential candidate to replace MOSFET due to advantages offered by CNFET such as its superior electrical, thermal, and mechanical properties. When designing circuits made of CNFETs, additional features such as the CNT number, positions and pitch in the array of tubes creating a transistor channel must be considered for performance evaluation. These features create additional challenges during simulation. In this paper, we analyze the effectiveness of CNFET Logical Effort (LE) model, to be used in place of simulation, for circuits with different topologies and CNFET technology (pitch) ranging from 2nm-30nm. We show that our delay evaluation tool using expanded LE model predicts delay for analyzed circuits with a very small average error of 2.15% as compared to SPICE simulations, and runs about 30 times faster. We have also evaluated our model in the presence of tube variations created by removal of unwanted metallic tubes. Our model closely correlated with Stanford SPICE model, developed for CNFET circuits, within 3%.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"13 1","pages":"659-662"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81926493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751299
Xiaohong Yang, H. Fu, X. An
Silver@titanium dioxide (Ag@TiO2) core-shell nanostructures and Ag surface doped TiO2 particles (TiO2@Ag) have been designed and synthesized by sol-gel and hydrothermal methods under mild conditions. These two types of Ag-TiO2 nanocomposites were characterized in terms of their properties. Specifically, the photocatalytic performance and antibacterial behavior of such nanocomposites have been investigated and compared. It was found that the Ag@TiO2 core-shell nanostructures exhibit superior photocatalytic property to the Ag surface doped TiO2 particles under the reported conditions, while the same situation happened in the bactericidal test. This is probably because the Ag cores tend to facilitate charge separation for TiO2, producing greater hydroxyl radicals on the surface of the TiO2 particles. These findings would be useful for the design and synthesis of Ag-TiO2 nanocomposites with desirable photocatalytic and antimicrobial activity for environmental applications.
{"title":"Comparative study on photocatalytic and bactericidal activity between Ag@TiO2 core-shell nanoparticles and Ag@TiO2 surface doped nanostructures","authors":"Xiaohong Yang, H. Fu, X. An","doi":"10.1109/NANO.2016.7751299","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751299","url":null,"abstract":"Silver@titanium dioxide (Ag@TiO2) core-shell nanostructures and Ag surface doped TiO2 particles (TiO2@Ag) have been designed and synthesized by sol-gel and hydrothermal methods under mild conditions. These two types of Ag-TiO2 nanocomposites were characterized in terms of their properties. Specifically, the photocatalytic performance and antibacterial behavior of such nanocomposites have been investigated and compared. It was found that the Ag@TiO2 core-shell nanostructures exhibit superior photocatalytic property to the Ag surface doped TiO2 particles under the reported conditions, while the same situation happened in the bactericidal test. This is probably because the Ag cores tend to facilitate charge separation for TiO2, producing greater hydroxyl radicals on the surface of the TiO2 particles. These findings would be useful for the design and synthesis of Ag-TiO2 nanocomposites with desirable photocatalytic and antimicrobial activity for environmental applications.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"6 1","pages":"167-170"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79635825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751377
Chenggan Chen, Chi Li, Huan Zhang, Qing Dai, Hang Zhou
X-ray detectors made from crystalline silicon or amorphous silicon are widely used in medical diagnosis, such as mammography or computed tomography. However, state-of-art of X-ray detectors are still suffering from high manufacturing cost. In this article, we demonstrate a methylammonium lead iodide (CH3NH3PbI3) based photodiode for direct X-ray detection. The solution-processed perovskite photodiode exhibited a good responsivity of 12.5A/W.
{"title":"Solution-processed perovskite for direct X-ray detection","authors":"Chenggan Chen, Chi Li, Huan Zhang, Qing Dai, Hang Zhou","doi":"10.1109/NANO.2016.7751377","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751377","url":null,"abstract":"X-ray detectors made from crystalline silicon or amorphous silicon are widely used in medical diagnosis, such as mammography or computed tomography. However, state-of-art of X-ray detectors are still suffering from high manufacturing cost. In this article, we demonstrate a methylammonium lead iodide (CH3NH3PbI3) based photodiode for direct X-ray detection. The solution-processed perovskite photodiode exhibited a good responsivity of 12.5A/W.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"22 1","pages":"101-104"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85289656","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751365
W. Tsai, Shih-Shou Lo
Zinc oxide (ZnO) nanorods are grown by a hydrothermal method. The morphology was changed from nanorod to nanotube via a well-controlled chemical aqueous etching process with appropriate amount potassium chloride (KCl). SEM analyses show that the ZnO nanorods can be changed to nanotubes when the chemical etching process was adopted with appropriate KCl concentration and etching time. Uniform ZnO nanotube can be achieved formed when the ZnO nanorods were immersed in 4M KCl aqueous with 13 hrs. The luminescence character of nanorods and nanotubes were investigated by the temperature dependence photoluminescence spectra. Two peaks (excitonic peak and deep level emission) were observed in both morphologies. However, the excitonic peak intensity (EI) and defect related emission peak intensity (DI) ratio of ZnO nanotubes increase when the etching time increases. The intensity ratio variation of EI to DI maybe can be attributed to the surface state of ZnO are increased and oxygen defects of ZnO are decreased in the etching process. The potential application of ZnO nanotubes is demonstrated.
{"title":"The influence on intensity ratio of peak emission between recombination of free-excitons and deep-defect for ZnO nanostructure evolution from nanorods to nanotubes","authors":"W. Tsai, Shih-Shou Lo","doi":"10.1109/NANO.2016.7751365","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751365","url":null,"abstract":"Zinc oxide (ZnO) nanorods are grown by a hydrothermal method. The morphology was changed from nanorod to nanotube via a well-controlled chemical aqueous etching process with appropriate amount potassium chloride (KCl). SEM analyses show that the ZnO nanorods can be changed to nanotubes when the chemical etching process was adopted with appropriate KCl concentration and etching time. Uniform ZnO nanotube can be achieved formed when the ZnO nanorods were immersed in 4M KCl aqueous with 13 hrs. The luminescence character of nanorods and nanotubes were investigated by the temperature dependence photoluminescence spectra. Two peaks (excitonic peak and deep level emission) were observed in both morphologies. However, the excitonic peak intensity (EI) and defect related emission peak intensity (DI) ratio of ZnO nanotubes increase when the etching time increases. The intensity ratio variation of EI to DI maybe can be attributed to the surface state of ZnO are increased and oxygen defects of ZnO are decreased in the etching process. The potential application of ZnO nanotubes is demonstrated.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"387-389"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83825674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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