Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751519
Yin-Hsien Su, T. Kuo, Wen-Hsi Lee, Yao-Ren Lee
MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.
{"title":"Investigation of high-k/metal gate MOS capacitors annealed by microwave annealing as a post-metal annealing process","authors":"Yin-Hsien Su, T. Kuo, Wen-Hsi Lee, Yao-Ren Lee","doi":"10.1109/NANO.2016.7751519","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751519","url":null,"abstract":"MOSFETs with high-k and metal gate materials have been adopted nowadays. However, using traditional rapid thermal annealing as the annealing process after metal deposition causes thick SiO2 inter-layers and large flat-band shift. For future processes, an alternative post-metal annealing method has to be found. This study investigated electrical characteristics and physical properties of TiN/Al/TiN/HfO2/Si MOS capacitors annealed with a microwave annealing technique. The results show that samples annealed by microwave annealing at 2700W demonstrate low equivalent oxide thickness, low interface states density and low oxide trapped charge density. Besides, the diffusion of Al into oxides films is also suppressed. As a result, for high-k/metal gate MOS capacitors, high oxide capacitance, high breakdown voltage and low leakage current can be obtained using microwave annealing.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"15 1","pages":"773-776"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91222819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-21DOI: 10.1109/NANO.2016.7751421
K. Matsushima, M. Shiratani, N. Itagaki
We have studied effects of deposition temperature on electrical properties of (ZnO)x(InN)1-x (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm2/Vs to 70 cm2/Vs and the carrier density increases from 1.8×1019 cm-3 to 3.4×1019 cm-3. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.
{"title":"Relationship between electric properties and surface flatness of (ZnO)x(InN)1−x films on ZnO templates","authors":"K. Matsushima, M. Shiratani, N. Itagaki","doi":"10.1109/NANO.2016.7751421","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751421","url":null,"abstract":"We have studied effects of deposition temperature on electrical properties of (ZnO)<sub>x</sub>(InN)<sub>1-x</sub> (ZION) films on ZnO templates. With increasing the deposition temperature from RT to 450°C, the electron mobility decreases from 93 cm<sup>2</sup>/Vs to 70 cm<sup>2</sup>/Vs and the carrier density increases from 1.8×10<sup>19</sup> cm<sup>-3</sup> to 3.4×10<sup>19</sup> cm<sup>-3</sup>. Furthermore, we found a correlation between electrical properties and root mean square (RMS) roughness of the films. These results suggest the surface flatness is an important parameter to determine electrical properties of ZION films.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"674-675"},"PeriodicalIF":0.0,"publicationDate":"2016-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77236571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-24DOI: 10.1109/NANO.2016.7751493
Ying-Ren Chen, Chenglung Chung, Gideon Chen, Y. Tzeng
We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30~50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.
{"title":"Independently controlled etching and growth of graphene quantum dots and their SERS applications","authors":"Ying-Ren Chen, Chenglung Chung, Gideon Chen, Y. Tzeng","doi":"10.1109/NANO.2016.7751493","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751493","url":null,"abstract":"We report the fabrication of graphene quantum dots on Cu substrates by thermal CVD. The synthesized high-density graphene quantum dots exhibit strong surface enhanced Raman scattering (SERS) effects. The nanoscale distance of 30~50nm between neighboring quantum dots combined with quantum dots to form nanostructures favorable for plasmonic coupling enhanced high local electric fields, which lead to greatly enhanced strength of signal from Raman scattering of molecules on the substrate as an effective means of detecting, identifying, and measuring low concentration molecules of scientific and technological significance.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"83 1","pages":"759-762"},"PeriodicalIF":0.0,"publicationDate":"2016-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83747915","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751476
P. Bonnaud, R. Miura, A. Suzuki, Naoto Miyamoto, N. Hatakeyama, A. Miyamoto
Because of their strong hydrophilicity, nanoporous silica materials are good candidates for humidity sensor applications. We employed molecular modeling to investigate the water behavior when confined in such materials in order to refine the design of the next generation of devices. We focused in this work on the mechanical behavior of those porous silica materials.
{"title":"Confined water in nanoporous silica: Application to humidity sensors","authors":"P. Bonnaud, R. Miura, A. Suzuki, Naoto Miyamoto, N. Hatakeyama, A. Miyamoto","doi":"10.1109/NANO.2016.7751476","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751476","url":null,"abstract":"Because of their strong hydrophilicity, nanoporous silica materials are good candidates for humidity sensor applications. We employed molecular modeling to investigate the water behavior when confined in such materials in order to refine the design of the next generation of devices. We focused in this work on the mechanical behavior of those porous silica materials.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"31 1","pages":"270-272"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72978352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751340
Nazek El‐atab, F. Chowdhury, T. G. Ulusoy, A. Ghobadi, Amin Nazirzadeh, A. Okyay, A. Nayfeh
In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanoislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.
{"title":"Growth of ∼3-nm ZnO nano-islands using Atomic Layer Deposition","authors":"Nazek El‐atab, F. Chowdhury, T. G. Ulusoy, A. Ghobadi, Amin Nazirzadeh, A. Okyay, A. Nayfeh","doi":"10.1109/NANO.2016.7751340","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751340","url":null,"abstract":"In this work, the deposition of 3-nm dispersed Zinc-Oxide (ZnO) nanoislands by thermal Atomic Layer Deposition (ALD) is demonstrated. The physical and electronic properties of the islands are studied using Atomic Force Microscopy, UV-Vis-NIR spectroscopy, and X-ray Photoelectron Spectroscopy. The results show that there is quantum confinement in 1D in the nanoislands which is manifested by the increase of the bandgap and the reduction of the electron affinity of the ZnO islands. The results are promising for the fabrication of future electronic and optoelectronic devices by single ALD step.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"79 5","pages":"687-689"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72633585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751521
Y. Daiko, S. Mizutani, K. Segawa, S. Honda, Y. Iwamoto
H+ emission from the sharpening glass fiber was successfully observed. Here, ion current density and chemical functionalization via ion irradiation are presented.
成功地观察到锐化玻璃纤维的H+发射。本文介绍了离子辐照下的离子电流密度和化学功能化。
{"title":"Development of H+ emission gun using a proton conducting glass fiber","authors":"Y. Daiko, S. Mizutani, K. Segawa, S. Honda, Y. Iwamoto","doi":"10.1109/NANO.2016.7751521","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751521","url":null,"abstract":"H+ emission from the sharpening glass fiber was successfully observed. Here, ion current density and chemical functionalization via ion irradiation are presented.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"11 1","pages":"351-353"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77754308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751305
H. Takahashi, I. Shimoyama
Small insects have agile performance in flight, walking locomotion, and so on. Currently, many researchers have been focusing the dynamics of their locomotion. We have been developing micro scaled piezoresistive force sensors to measure forces exerted by insects during flying, walking and jumping. In this paper, we introduce these sensors which are specialized for target insects.
{"title":"Evaluation of insect locomotion using MEMS piezoresistive force sensors","authors":"H. Takahashi, I. Shimoyama","doi":"10.1109/NANO.2016.7751305","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751305","url":null,"abstract":"Small insects have agile performance in flight, walking locomotion, and so on. Currently, many researchers have been focusing the dynamics of their locomotion. We have been developing micro scaled piezoresistive force sensors to measure forces exerted by insects during flying, walking and jumping. In this paper, we introduce these sensors which are specialized for target insects.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"45 1","pages":"931-932"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80007876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751418
Nurul Farhanah Ab Halim, N. Musa, Z. Zakaria, S. F. Kamaruddin, A. M. Mohd Noor, N. Derman, A. Shakaff
The use of biomimetic sensor has attracted attention due to its sensitivity and selectivity. Molecular imprinted polymer (MIP) among the best synthetic biomimetic interfaces to detect target molecules. However MIP has low electrical conductivity. Sensor fabricated using high conductive polymer will possess a good sensitivity and short response time. Therefore, it is important to enhance the conductivity of MIP, thus it would directly influence charge carrier mobility of the polymer itself. The resulting rGO-MIP OTFT exhibit electrical conductivity of 3.10×10-3 Sm-1 at 0.4wt/vol% and MIP exhibit electrical conductivity of 7.16×10-4 Sm-1. The electrical conductivity of rGO-MIP increased about one in magnitude order compared to MIP. Moreover, this work reports the electrical performance of reduce graphene oxide-molecular imprinted polymer organic thin film transistor (rGO-MIP OTFT) for serine detection. rGO was introduced into MIP, to allow a highly conductive sensing material thus enhanced selectivity and sensitivity of the sensor. By analyzing the electrical performance of the sensors, the performances of OTFT sensor enhanced with rGO-MIP interlayer and OTFT sensor with MIP interlayer when exposed to serine analyte were obtained. The results showed that there were remarkable shifts of drain current obtained from OTFT sensor with rGO-MIP interlayer after exposed to serine analyte. Moreover, the sensitivity of OTFT sensor with rGO-MIP interlayer was nearly higher than the OTFT sensor with MIP interlayer. Hence, it proved that rGO successfully enhanced the sensing performance of OTFT sensor.
{"title":"Highly sensitive reduce graphene oxide — Molecular imprinted polymer organic thin film transistor for serine detection","authors":"Nurul Farhanah Ab Halim, N. Musa, Z. Zakaria, S. F. Kamaruddin, A. M. Mohd Noor, N. Derman, A. Shakaff","doi":"10.1109/NANO.2016.7751418","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751418","url":null,"abstract":"The use of biomimetic sensor has attracted attention due to its sensitivity and selectivity. Molecular imprinted polymer (MIP) among the best synthetic biomimetic interfaces to detect target molecules. However MIP has low electrical conductivity. Sensor fabricated using high conductive polymer will possess a good sensitivity and short response time. Therefore, it is important to enhance the conductivity of MIP, thus it would directly influence charge carrier mobility of the polymer itself. The resulting rGO-MIP OTFT exhibit electrical conductivity of 3.10×10-3 Sm-1 at 0.4wt/vol% and MIP exhibit electrical conductivity of 7.16×10-4 Sm-1. The electrical conductivity of rGO-MIP increased about one in magnitude order compared to MIP. Moreover, this work reports the electrical performance of reduce graphene oxide-molecular imprinted polymer organic thin film transistor (rGO-MIP OTFT) for serine detection. rGO was introduced into MIP, to allow a highly conductive sensing material thus enhanced selectivity and sensitivity of the sensor. By analyzing the electrical performance of the sensors, the performances of OTFT sensor enhanced with rGO-MIP interlayer and OTFT sensor with MIP interlayer when exposed to serine analyte were obtained. The results showed that there were remarkable shifts of drain current obtained from OTFT sensor with rGO-MIP interlayer after exposed to serine analyte. Moreover, the sensitivity of OTFT sensor with rGO-MIP interlayer was nearly higher than the OTFT sensor with MIP interlayer. Hence, it proved that rGO successfully enhanced the sensing performance of OTFT sensor.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"284-287"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79009912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751331
Masayuki Urabe, Kazuki Takeishi, Kodai Itabashi, J. Takayama, Shula L. Chen, A. Murayama
We have grown ultrahigh-density self-assembled quantum dots (QDs) of InGaAs with sheet densities up to 2.5×1011 cm-2 and lateral diameters down to 10 nm, where the dot density increases with increasing As pressure during dot growth under optimum growth conditions. A ground-state photoluminescence (PL) spectrum shows a spectral width of 47 meV for the highest-density sample. Optical excitation-density dependences of the PL intensity and time profile are studied. The PL intensity from QD excited states increases with increasing excitation power, originating from a state-filling effect in QDs, which is directly confirmed by a plateau-like behavior on the PL decay curve. We find that the filling effect is significantly suppressed in the above ultrahigh-density dot ensemble, which suggests potential applications to superior energy-saving lasing and spin-functional optical devices.
{"title":"Ultrahigh-density self-assembled quantum dots of InGaAs and suppression of optical state-filling effect","authors":"Masayuki Urabe, Kazuki Takeishi, Kodai Itabashi, J. Takayama, Shula L. Chen, A. Murayama","doi":"10.1109/NANO.2016.7751331","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751331","url":null,"abstract":"We have grown ultrahigh-density self-assembled quantum dots (QDs) of InGaAs with sheet densities up to 2.5×1011 cm-2 and lateral diameters down to 10 nm, where the dot density increases with increasing As pressure during dot growth under optimum growth conditions. A ground-state photoluminescence (PL) spectrum shows a spectral width of 47 meV for the highest-density sample. Optical excitation-density dependences of the PL intensity and time profile are studied. The PL intensity from QD excited states increases with increasing excitation power, originating from a state-filling effect in QDs, which is directly confirmed by a plateau-like behavior on the PL decay curve. We find that the filling effect is significantly suppressed in the above ultrahigh-density dot ensemble, which suggests potential applications to superior energy-saving lasing and spin-functional optical devices.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"23 1","pages":"638-639"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81812647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751541
M. Nakajima, Nagao Kei, Masaru Takeuchi, Y. Hasegawa, T. Fukuda, Qiang Huang
Nanotool feeding system (NTFS) is presented for efficient nanomanipulation. We constructed a unique bio-nanomanipulation system inside an Environmental-SEM (E-SEM) using various nanotools, for example stiffness measurement nanotool, dual electrical nanoprobe, nanopicker, nanofork, nanocutter, nanoputter, and nanoinjector. For continues usage of different multiple tools, it needs to exchange the nanotools continuously. In this paper, the Rotary-table Nanotool Feeding System (R-NTFS) is proposed to realize continuous exchange of different multiple tools individually. An efficient continuous nanomanipulation was achieved by a short exchange time which was about 13 seconds. Finally, the multiple nanoinjection was demonstrated using the proposed R-NTFS.
{"title":"Nanotool Feeding System for efficient nanomanipulation inside Electron Microscope","authors":"M. Nakajima, Nagao Kei, Masaru Takeuchi, Y. Hasegawa, T. Fukuda, Qiang Huang","doi":"10.1109/NANO.2016.7751541","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751541","url":null,"abstract":"Nanotool feeding system (NTFS) is presented for efficient nanomanipulation. We constructed a unique bio-nanomanipulation system inside an Environmental-SEM (E-SEM) using various nanotools, for example stiffness measurement nanotool, dual electrical nanoprobe, nanopicker, nanofork, nanocutter, nanoputter, and nanoinjector. For continues usage of different multiple tools, it needs to exchange the nanotools continuously. In this paper, the Rotary-table Nanotool Feeding System (R-NTFS) is proposed to realize continuous exchange of different multiple tools individually. An efficient continuous nanomanipulation was achieved by a short exchange time which was about 13 seconds. Finally, the multiple nanoinjection was demonstrated using the proposed R-NTFS.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"61 1","pages":"36-37"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84205727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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