Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751319
Kodai Itabashi, Kazuki Takeishi, Masayuki Urabe, J. Takayama, Shula L. Chen, A. Murayama
We have studied GaAs and AlGaAs barriers for the purpose of improving spin-transport performance in spin-polarized light-emitting diodes (LEDs) based on self-assembled quantum dots (QDs) of InGaAs. In the spin-LED utilizing a spin-functional optical active layer of In-based self-assembled QDs, growth temperatures of top barriers of GaAs and AlGaAs were reduced to suppress indium diffusion from the QDs into the barriers after forming the QDs. We show a significant improvement of spin-transport property as well as of carrier-transport one with increasing growth temperature of the Al0.1Ga0.9As barrier from 580 to 640 °C, while luminescent spectral energy and shape of the QDs are not markedly affected.
{"title":"Growth optimization of spin-transport barriers used for spin-polarized light-emitting diodes based on InGaAs quantum dots","authors":"Kodai Itabashi, Kazuki Takeishi, Masayuki Urabe, J. Takayama, Shula L. Chen, A. Murayama","doi":"10.1109/NANO.2016.7751319","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751319","url":null,"abstract":"We have studied GaAs and AlGaAs barriers for the purpose of improving spin-transport performance in spin-polarized light-emitting diodes (LEDs) based on self-assembled quantum dots (QDs) of InGaAs. In the spin-LED utilizing a spin-functional optical active layer of In-based self-assembled QDs, growth temperatures of top barriers of GaAs and AlGaAs were reduced to suppress indium diffusion from the QDs into the barriers after forming the QDs. We show a significant improvement of spin-transport property as well as of carrier-transport one with increasing growth temperature of the Al0.1Ga0.9As barrier from 580 to 640 °C, while luminescent spectral energy and shape of the QDs are not markedly affected.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"49 1","pages":"633-635"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83509338","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751369
Xiu Liang, P. Yin
Graphene-based noble metal nanocomposites have attracted tremendous research interest in the fields of surface-enhanced Raman scattering (SERS) recently. However, efficient utilization as SERS substrates has been impeded by the difficulty of tuning SERS enhancement effects induced from chemical and plasmonic enhancement by different preparation methods of graphene. Herein, three kinds of graphene-based Au hybrid, CVD-G/Au, GO/Au and rGO/Au, which were synthesized by physical sputtering and chemical in-situ crystallization growth methods, were fabricated to evaluate as SERS substrates. Simple methods were developed to enhance the Raman signals effectively by tuning both plasmonic and chemical enhancement, respectively. Besides, the prepared rGO/Au nanocomposites were used as SERS substrates to monitor the process of plasmon-driven surface-catalyzed reaction from 4-nitrobenzenethiol (4-NBT) to p,p'-dimercaptoazobenzene (DMAB). According to systematic comparisons during power- and time-dependent SERS experiments, rGO/Au was demonstrated to be with lower power threshold and higher catalytic efficiency than Au nanoparticles (NPs) toward the reaction, which provide clues to understand the interaction between metal and graphene as well as further study of plasmon-driven chemical reactions for further.
{"title":"Effective tuning and application of graphene-based Au nanocomposites as SERS substrates","authors":"Xiu Liang, P. Yin","doi":"10.1109/NANO.2016.7751369","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751369","url":null,"abstract":"Graphene-based noble metal nanocomposites have attracted tremendous research interest in the fields of surface-enhanced Raman scattering (SERS) recently. However, efficient utilization as SERS substrates has been impeded by the difficulty of tuning SERS enhancement effects induced from chemical and plasmonic enhancement by different preparation methods of graphene. Herein, three kinds of graphene-based Au hybrid, CVD-G/Au, GO/Au and rGO/Au, which were synthesized by physical sputtering and chemical in-situ crystallization growth methods, were fabricated to evaluate as SERS substrates. Simple methods were developed to enhance the Raman signals effectively by tuning both plasmonic and chemical enhancement, respectively. Besides, the prepared rGO/Au nanocomposites were used as SERS substrates to monitor the process of plasmon-driven surface-catalyzed reaction from 4-nitrobenzenethiol (4-NBT) to p,p'-dimercaptoazobenzene (DMAB). According to systematic comparisons during power- and time-dependent SERS experiments, rGO/Au was demonstrated to be with lower power threshold and higher catalytic efficiency than Au nanoparticles (NPs) toward the reaction, which provide clues to understand the interaction between metal and graphene as well as further study of plasmon-driven chemical reactions for further.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"89 1","pages":"612-615"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77622543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751302
Youfan Hu
Energy harvesting technologies based on piezoelectric properties of nanomaterials and triboelectric phenomenon between two different materials are superior candidates for random mechanical energy harvesting in the environment. Self-powered system integrated with such kind of energy harvesting module and multi-functional nanodevices have great application potentials in the independent, sustainable, maintenance-free operations of implantable biosensors, remote and mobile environmental sensors, nanorobotics, microelectromechanical systems, and even portable/wearable personal electronics. Several recent progresses are summarized here.
{"title":"Harvesting the hidden energy for self-powered systems","authors":"Youfan Hu","doi":"10.1109/NANO.2016.7751302","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751302","url":null,"abstract":"Energy harvesting technologies based on piezoelectric properties of nanomaterials and triboelectric phenomenon between two different materials are superior candidates for random mechanical energy harvesting in the environment. Self-powered system integrated with such kind of energy harvesting module and multi-functional nanodevices have great application potentials in the independent, sustainable, maintenance-free operations of implantable biosensors, remote and mobile environmental sensors, nanorobotics, microelectromechanical systems, and even portable/wearable personal electronics. Several recent progresses are summarized here.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"4 1","pages":"928-930"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86938791","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751364
Sarah L. Walden, Joseph F. S. Fernando, E. Waclawik, M. Shortell, E. Jaatinen
The nonlinear response of zinc oxide and zinc oxide-gold hybrid colloidal nanostructures to 532 nm nanosecond pulses was investigated. The z-scan technique was used to measure the nonlinear absorption of zinc oxide, zinc-oxide: gold hybrids and mixed colloids of zinc-oxide and gold. Despite similar zinc oxide concentrations, the colloids containing gold nanoparticles displayed stronger intensity dependent nonlinear absorption with optical limiting thresholds for the three samples of 35 J/cm2, 6.1 J/cm2 and 4.1 J/cm2, respectively. Therefore, by combining gold with zinc-oxide to form hybrid nanostructures or by simply mixing gold and zinc-oxide nanostructures together, the optical limiting threshold is reduced which is advantageous for optical limiting applications.
{"title":"Nonlinear optical properties of colloidal ZnO-Au nanostructures for optical limiting applications","authors":"Sarah L. Walden, Joseph F. S. Fernando, E. Waclawik, M. Shortell, E. Jaatinen","doi":"10.1109/NANO.2016.7751364","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751364","url":null,"abstract":"The nonlinear response of zinc oxide and zinc oxide-gold hybrid colloidal nanostructures to 532 nm nanosecond pulses was investigated. The z-scan technique was used to measure the nonlinear absorption of zinc oxide, zinc-oxide: gold hybrids and mixed colloids of zinc-oxide and gold. Despite similar zinc oxide concentrations, the colloids containing gold nanoparticles displayed stronger intensity dependent nonlinear absorption with optical limiting thresholds for the three samples of 35 J/cm2, 6.1 J/cm2 and 4.1 J/cm2, respectively. Therefore, by combining gold with zinc-oxide to form hybrid nanostructures or by simply mixing gold and zinc-oxide nanostructures together, the optical limiting threshold is reduced which is advantageous for optical limiting applications.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"295 1","pages":"325-328"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87711420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751338
Chih-Pin Lin, Ching-Ting Lin, Pang-Shiuan Liu, Ming‐Jiue Yu, T. Hou
Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.
{"title":"Grain size and plasma doping effects on CVD-based 2D transition metal dichalcogenide","authors":"Chih-Pin Lin, Ching-Ting Lin, Pang-Shiuan Liu, Ming‐Jiue Yu, T. Hou","doi":"10.1109/NANO.2016.7751338","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751338","url":null,"abstract":"Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"1 1","pages":"501-504"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90285660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751366
Chuan-Feng Yeh, Cheng-Kun He, Chia-Hsien Hsu
Increasing evidence has shown that heterogeneity in physiology and pathology have important implications for the treatment of human diseases. Single cell isolation and characterization studies are crucial for unlocking the complex regulation pathways underlying various diseases like cancer. However, to date single cell isolation still faces many challenges, especially in processing rare samples. Here, we present a novel microfluidic array chip for single cell isolation for rare samples. Our design exempts the use of long tubing, thus decreases cell loss from dead volume and allows for more accurate control of flow rate using syringe pumps during the cell capture process. Our data showed that the device significantly improved single cell capture efficiency (~ 60 %) from small numbers of (50-500) cells in a small volume (5-10 μL). The device could be used for isolating single cells from rare samples of clinical specimens, thus potentially benefit disease diagnosis and therapy.
{"title":"A microfluidic device for single cell isolation from rare samples","authors":"Chuan-Feng Yeh, Cheng-Kun He, Chia-Hsien Hsu","doi":"10.1109/NANO.2016.7751366","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751366","url":null,"abstract":"Increasing evidence has shown that heterogeneity in physiology and pathology have important implications for the treatment of human diseases. Single cell isolation and characterization studies are crucial for unlocking the complex regulation pathways underlying various diseases like cancer. However, to date single cell isolation still faces many challenges, especially in processing rare samples. Here, we present a novel microfluidic array chip for single cell isolation for rare samples. Our design exempts the use of long tubing, thus decreases cell loss from dead volume and allows for more accurate control of flow rate using syringe pumps during the cell capture process. Our data showed that the device significantly improved single cell capture efficiency (~ 60 %) from small numbers of (50-500) cells in a small volume (5-10 μL). The device could be used for isolating single cells from rare samples of clinical specimens, thus potentially benefit disease diagnosis and therapy.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"15 1","pages":"222-223"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85724639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA with 300W for 100sec treatment on AP-IGZO TFTs have been fabricated successfully and show excellent electrical characteristics including a VTH of -1.23 V, SS of 0.18 V/dec, μFE of 17.4 cm2/V-s, and Ion/Ioff ratio of 8.14 106. Stretched exponential time dependence model is used to analyze the mechanism of AP-IGZO TFTs under PBTI stress. Accordingly, chemisorption model for oxygen adsorption at AP-IGZO backchannel with and without MWAA is proposed to explain the mechanism under PBTI stress.
{"title":"Investigation of microwave assisted annealing on AP-PECVD fabricated In-Ga-Zn-O thin film transistors under positive bias temperature stress","authors":"Chien-Hung Wu, Bo-Wen Huang, Kow-Ming Chang, C. Cheng, Hsin-Ying Chen, Yao-Jen Lee, Jian-Hong Lin, Jui-Mei Hsu","doi":"10.1109/NANO.2016.7751474","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751474","url":null,"abstract":"In this paper, microwave assisted annealing (MWAA) technique on atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) fabricated indium-gallium-zinc-oxide thin-film transistors (IGZO TFTs) is investigated for the first time. MWAA with 300W for 100sec treatment on AP-IGZO TFTs have been fabricated successfully and show excellent electrical characteristics including a VTH of -1.23 V, SS of 0.18 V/dec, μFE of 17.4 cm2/V-s, and Ion/Ioff ratio of 8.14 106. Stretched exponential time dependence model is used to analyze the mechanism of AP-IGZO TFTs under PBTI stress. Accordingly, chemisorption model for oxygen adsorption at AP-IGZO backchannel with and without MWAA is proposed to explain the mechanism under PBTI stress.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"125 1","pages":"176-179"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88732778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751446
K. Goto, K. Moritani, N. Inui
We present a method of determining the mass of a single picogram particle by observing its Brownian motion near the bottom of a droplet of water. The motion of the particle caused by thermal fluctuation is restricted within a narrow region because of gravity, and the vertical displacement of the particle from the bottom of the droplet depends on its mass. Since the particle is trapped inside the droplet, the mean horizontal displacement decreases as the mass of the particle increases. Hence, the mass can be determined by observing displacement. Although a modeling error arises from neglecting the electrical double-layer interaction between a particle and water surface, we show that its influence on the mass is very small.
{"title":"Mass measurement of single nanoparticle by trapping in water droplet","authors":"K. Goto, K. Moritani, N. Inui","doi":"10.1109/NANO.2016.7751446","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751446","url":null,"abstract":"We present a method of determining the mass of a single picogram particle by observing its Brownian motion near the bottom of a droplet of water. The motion of the particle caused by thermal fluctuation is restricted within a narrow region because of gravity, and the vertical displacement of the particle from the bottom of the droplet depends on its mass. Since the particle is trapped inside the droplet, the mean horizontal displacement decreases as the mass of the particle increases. Hence, the mass can be determined by observing displacement. Although a modeling error arises from neglecting the electrical double-layer interaction between a particle and water surface, we show that its influence on the mass is very small.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"86 1","pages":"214-217"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85875110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751576
M. Sugiyama, H. Cho, Toprasertpong Kasidit, H. Sodabanlu, Kentaroh Watanabe, Y. Nakano
Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can be superior to existing quantum wells as a band-gap adjuster of a middle cell for improved current matching and efficiency.
{"title":"InGaAs/GaAsP quantum wells and wires for high-efficiency photovoltaic applications","authors":"M. Sugiyama, H. Cho, Toprasertpong Kasidit, H. Sodabanlu, Kentaroh Watanabe, Y. Nakano","doi":"10.1109/NANO.2016.7751576","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751576","url":null,"abstract":"Layer undulation of InGaAs/GaAs/GaAsP strain-balanced quantum well superlattice forms InGaAs nanowires along the bunching steps on a vicinal substrate embedded in the GaAs/GaAsP matrix. When it is used as an absorber in a GaAs single-junction cell, it assists carrier escape from narrow-gap InGaAs and extends photoluminescence lifetime as compared with a planar superlattice. Such a wire structure can be superior to existing quantum wells as a band-gap adjuster of a middle cell for improved current matching and efficiency.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"86 1","pages":"519-520"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85994465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751520
A. Falco, J. F. Salmerón, F. Loghin, A. Abdelhalim, Paolo Lugli, A. Rivadeneyra
In this work, a comparison between the electro-optical characteristics of CNT random networks obtained through inkjet printing and spray-deposition on flexible substrates is presented. Transmittance values are similar in both fabrication techniques; however, the sheet resistance of the inkjetted layers diverges significantly with respect to the reference spray-deposited thin film. To overcome this limitation, we show a relationship between the printing resolution and the sheet resistance. Furthermore, big differences between the two studied substrates are found in the electro-optical characteristics of CNT films. This work shows a reliable procedure for the choice of substrates and printing parameters for the realization of fully inkjet-printed large area CNT networks for electrode and sensing applications.
{"title":"Optimization of process parameters for inkjet printing of CNT random networks on flexible substrates","authors":"A. Falco, J. F. Salmerón, F. Loghin, A. Abdelhalim, Paolo Lugli, A. Rivadeneyra","doi":"10.1109/NANO.2016.7751520","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751520","url":null,"abstract":"In this work, a comparison between the electro-optical characteristics of CNT random networks obtained through inkjet printing and spray-deposition on flexible substrates is presented. Transmittance values are similar in both fabrication techniques; however, the sheet resistance of the inkjetted layers diverges significantly with respect to the reference spray-deposited thin film. To overcome this limitation, we show a relationship between the printing resolution and the sheet resistance. Furthermore, big differences between the two studied substrates are found in the electro-optical characteristics of CNT films. This work shows a reliable procedure for the choice of substrates and printing parameters for the realization of fully inkjet-printed large area CNT networks for electrode and sensing applications.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"30 1","pages":"487-490"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84440789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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