Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751308
Y. Shimizu, Yuki Matsuno, Y. Ohba, W. Gao
This paper presents a concept of a micro thermal sensor to be used for defect inspection of a smoothly-finished surface such as a bare wafer or a hard disk. In the proposed concept, existences of the defects on a measurement surface will be detected by scanning the surface with the micro thermal sensor, which is utilized to detect the variation of the thermal flow in-between the sensor surface and the measurement surface. The proposed micro thermal sensor has a possibility of detecting various types of surface defects. An existence of the defect having a convex shape such as an asperity or a particle can be found by detecting a heat generated at the collision between the sensor surface and the tip of the defect. In addition, the thermal sensor is expected to be applied for the inspection of pits or scratches in a concave shape on the smooth surface. When the thermal sensor is placed with respect to the measurement surface with a tiny gap of less than 1 μm, a heat transfer system sensitive against the gap variation will be constructed at the interface between the thermal sensor and the measurement surface becomes a system.
{"title":"Micro thermal sensor for nanometric surface defect inspection","authors":"Y. Shimizu, Yuki Matsuno, Y. Ohba, W. Gao","doi":"10.1109/NANO.2016.7751308","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751308","url":null,"abstract":"This paper presents a concept of a micro thermal sensor to be used for defect inspection of a smoothly-finished surface such as a bare wafer or a hard disk. In the proposed concept, existences of the defects on a measurement surface will be detected by scanning the surface with the micro thermal sensor, which is utilized to detect the variation of the thermal flow in-between the sensor surface and the measurement surface. The proposed micro thermal sensor has a possibility of detecting various types of surface defects. An existence of the defect having a convex shape such as an asperity or a particle can be found by detecting a heat generated at the collision between the sensor surface and the tip of the defect. In addition, the thermal sensor is expected to be applied for the inspection of pits or scratches in a concave shape on the smooth surface. When the thermal sensor is placed with respect to the measurement surface with a tiny gap of less than 1 μm, a heat transfer system sensitive against the gap variation will be constructed at the interface between the thermal sensor and the measurement surface becomes a system.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"47 1","pages":"978-979"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80487404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751318
Kazuki Takeishi, Shula L. Chen, J. Takayama, Kodai Itabashi, Masayuki Urabe, A. Murayama
We have made transient photoluminescence (PL) study on electron-spin dynamics in InGaAs-based coupled nanostructures of quantum dots (QDs) with quantum wells (QWs). Self-assembled InGaAs QDs were grown integrated with an InGaAs QW through a GaAs tunneling barrier or embedded in a GaAs QW. Time-resolved circularly polarized PL in the QDs was measured as a function of temperature after optical spin excitation selectively in the QW, reflecting electron-spin polarization injected from the QW into QDs. We show the spin injection dynamics induced by spin tunneling and subsequent energy relaxation from the QW into QDs in the former coupled QDs. Spin relaxation at excited states in the QDs after the dynamical spin injection is shown as a function of temperature. These coupled QD samples exhibit thermally persistent spin polarization up to 200 K, originating from ultrafast and thus efficient spin injection as well as longer spin-relaxation times compared to radiative decay times in the QDs after the injection.
{"title":"Transient photoluminescence study on spin dynamics in InGaAs-based coupled nanostructures of quantum dots with quantum wells","authors":"Kazuki Takeishi, Shula L. Chen, J. Takayama, Kodai Itabashi, Masayuki Urabe, A. Murayama","doi":"10.1109/NANO.2016.7751318","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751318","url":null,"abstract":"We have made transient photoluminescence (PL) study on electron-spin dynamics in InGaAs-based coupled nanostructures of quantum dots (QDs) with quantum wells (QWs). Self-assembled InGaAs QDs were grown integrated with an InGaAs QW through a GaAs tunneling barrier or embedded in a GaAs QW. Time-resolved circularly polarized PL in the QDs was measured as a function of temperature after optical spin excitation selectively in the QW, reflecting electron-spin polarization injected from the QW into QDs. We show the spin injection dynamics induced by spin tunneling and subsequent energy relaxation from the QW into QDs in the former coupled QDs. Spin relaxation at excited states in the QDs after the dynamical spin injection is shown as a function of temperature. These coupled QD samples exhibit thermally persistent spin polarization up to 200 K, originating from ultrafast and thus efficient spin injection as well as longer spin-relaxation times compared to radiative decay times in the QDs after the injection.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"94 1","pages":"630-632"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89688803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751355
N. Toyoda
Crater formations with gas cluster ion beam (GCIB) were used for non-contact hardness measurement of thin films. The crater inner diameter formed with size-selected Ar cluster ions decreased with inverse cube root of film hardness. When the total acceleration energy was the same, cluster size did not affect the crater inner diameter. In addition, high ionization electron voltage (Ve) cause wide distribution of crater depth and diameter due to multiply charged GCIB.
{"title":"Development of non-contact hardness measurements with crater formations by gas cluster ions","authors":"N. Toyoda","doi":"10.1109/NANO.2016.7751355","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751355","url":null,"abstract":"Crater formations with gas cluster ion beam (GCIB) were used for non-contact hardness measurement of thin films. The crater inner diameter formed with size-selected Ar cluster ions decreased with inverse cube root of film hardness. When the total acceleration energy was the same, cluster size did not affect the crater inner diameter. In addition, high ionization electron voltage (Ve) cause wide distribution of crater depth and diameter due to multiply charged GCIB.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"45 1","pages":"381-382"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89414968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751554
Bo-Wei Chen, T. Chang, Shin-Ping Huang, Chih-Hung Pan, Y. Hung
This letter investigates the effect of negative bias stress induced abnormal degradation in amorphous InGaZnO thin-film transistors (TFTs) at high temperature. Drain current-gate voltage (ID-VG) and capacitance-voltage (C-V) measurements are employed to analyze degradation mechanism. High temperature negative bias stress lead to not only a negative parallel shift in ID-VG but also a C-V distortion at off-state. This attributes to a barrier lowering effect nearby both drain and source sides according to symmetrical hole-trapping effect. Furthermore, both on-current and subthreshold swing will be improved due to the localized hole-trapping near source and drain.
{"title":"Abnormal transconductance enhancement effects induced by negative bias-stress at high temperature in amorphous-InGaZnO thin-film transistors","authors":"Bo-Wei Chen, T. Chang, Shin-Ping Huang, Chih-Hung Pan, Y. Hung","doi":"10.1109/NANO.2016.7751554","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751554","url":null,"abstract":"This letter investigates the effect of negative bias stress induced abnormal degradation in amorphous InGaZnO thin-film transistors (TFTs) at high temperature. Drain current-gate voltage (ID-VG) and capacitance-voltage (C-V) measurements are employed to analyze degradation mechanism. High temperature negative bias stress lead to not only a negative parallel shift in ID-VG but also a C-V distortion at off-state. This attributes to a barrier lowering effect nearby both drain and source sides according to symmetrical hole-trapping effect. Furthermore, both on-current and subthreshold swing will be improved due to the localized hole-trapping near source and drain.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"23 1","pages":"780-782"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89539504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751460
Yusuke Goya, H. Koga, M. Nogi, K. Suganuma
Mass production techniques to provide highly sensitive and low-cost antennas are demanded to achieve the Internet of Things. Printing is a suitable technique for mass production of low-cost antennas. In this study, three types of printed silver nanowire (AgNW) antennas were fabricated by preparing inks containing AgNWs of different width and length. Printed antennas of short, narrow AgNWs achieved low volume resistivity (32.1 μΩ cm) and better radio-wave transmission performance than conventional etched copper foil tracks in the high frequency region of 2.0-5.0 GHz.
{"title":"Effect of conductive nanomaterial dimensions on radio-wave transmission performance of printed antennas","authors":"Yusuke Goya, H. Koga, M. Nogi, K. Suganuma","doi":"10.1109/NANO.2016.7751460","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751460","url":null,"abstract":"Mass production techniques to provide highly sensitive and low-cost antennas are demanded to achieve the Internet of Things. Printing is a suitable technique for mass production of low-cost antennas. In this study, three types of printed silver nanowire (AgNW) antennas were fabricated by preparing inks containing AgNWs of different width and length. Printed antennas of short, narrow AgNWs achieved low volume resistivity (32.1 μΩ cm) and better radio-wave transmission performance than conventional etched copper foil tracks in the high frequency region of 2.0-5.0 GHz.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"48 1","pages":"375-376"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85795998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751528
H. Numata, S. Asano, Fusako Sasaki, T. Saito, F. Nihey, H. Kataura
Ink property for high-quality printed carbon nanotube (CNT) transistor was investigated and it was found that adhesion property of the semiconducting (s-) CNT micelles was a key issue. Anionic surfactants would prevent the s-CNT micelles from being adsorbed to the surface which was functionalized by amino groups and deteriorate the device characteristics. High-quality and high-uniform CNT transistors were obtained by using anionic surfactant free s-CNT ink, and a pressure sensor sheet was successfully demonstrated. The CNT transistors were fabricated by mask-less printing and potentialities of on-demand and on-line fabrication of large-area electronics utilizing printed CNT transistors were shown.
{"title":"Adhesion property of carbon nanotube micelles for high-quality printed transistors","authors":"H. Numata, S. Asano, Fusako Sasaki, T. Saito, F. Nihey, H. Kataura","doi":"10.1109/NANO.2016.7751528","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751528","url":null,"abstract":"Ink property for high-quality printed carbon nanotube (CNT) transistor was investigated and it was found that adhesion property of the semiconducting (s-) CNT micelles was a key issue. Anionic surfactants would prevent the s-CNT micelles from being adsorbed to the surface which was functionalized by amino groups and deteriorate the device characteristics. High-quality and high-uniform CNT transistors were obtained by using anionic surfactant free s-CNT ink, and a pressure sensor sheet was successfully demonstrated. The CNT transistors were fabricated by mask-less printing and potentialities of on-demand and on-line fabrication of large-area electronics utilizing printed CNT transistors were shown.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"16 1","pages":"849-852"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87477988","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751489
Yuanfang Hou, Hi-Wen Chen, Shu-Jen Chen, Ruey‐Chi Wang
In this work, n-ZnO/p-CuxO and n-Cu:ZnO/n-Zn:CuO core-shell nanorod (NR) arrays were synthesized by depositing CuxO nanoshells with different thickness on surface of ZnO NRs and subsequent annealing. Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) show the outer CuxO shells were comprised of Cu2O and CuO nanocrystals before annealing, but they transformed to single-crystalline Zn doped CuO nanoparticles after annealing. X-ray diffraction (XRD) showed the (0002) peaks shift to higher angle after annealing, indicative of diffusion of Cu and replacement of Zn2+ by Cu2+ ions. Room-temperature Gas-sensing measurements show the n-ZnO/p-CuxO core/shell nanostructures with various CuxO thicknesses demonstrating enhanced selectivity for different gases by utilizing the competition of inner n-ZnO and outer p-CuxO. This work proposes an effective route to synthesize n-ZnO/p-CuxO and CZO nanostructures which have great potential in developing room-temperature gas sensors.
{"title":"Enhanced gas selectivity by p-n type competition of ZnO nanorods with varied CuO shells","authors":"Yuanfang Hou, Hi-Wen Chen, Shu-Jen Chen, Ruey‐Chi Wang","doi":"10.1109/NANO.2016.7751489","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751489","url":null,"abstract":"In this work, n-ZnO/p-CuxO and n-Cu:ZnO/n-Zn:CuO core-shell nanorod (NR) arrays were synthesized by depositing CuxO nanoshells with different thickness on surface of ZnO NRs and subsequent annealing. Scanning electron microscopy (SEM) and Transmission electron microscopy (TEM) show the outer CuxO shells were comprised of Cu2O and CuO nanocrystals before annealing, but they transformed to single-crystalline Zn doped CuO nanoparticles after annealing. X-ray diffraction (XRD) showed the (0002) peaks shift to higher angle after annealing, indicative of diffusion of Cu and replacement of Zn2+ by Cu2+ ions. Room-temperature Gas-sensing measurements show the n-ZnO/p-CuxO core/shell nanostructures with various CuxO thicknesses demonstrating enhanced selectivity for different gases by utilizing the competition of inner n-ZnO and outer p-CuxO. This work proposes an effective route to synthesize n-ZnO/p-CuxO and CZO nanostructures which have great potential in developing room-temperature gas sensors.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"33 1","pages":"193-195"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76031538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751330
A. A. Daryakenari, Davood Hosseini, A. Apostoluk, Christoph R. Muller, J. Delaunay
The catalyst support layer is fabricated by applying a DC electrophoretic deposition on a colloid consisting of dispersed nanographitic flakes along with magnesium ions in isopropyl alcohol. The thickness and conductivity of the deposited layers are controlled by varying the time of the voltage application in the electrophoretic deposition EPD technique. The catalyst supports are decorated by sputtering palladium nanostructures serving as the catalyst. The fabricated support layer with the optimum thickness exhibits an improved conductivity and electro-oxidation performance attaining 800 mA/cm2 per mg of palladium.
{"title":"The influence of the thickness of nanographitic coatings fabricated by electrophoretic deposition on ethanol electro-oxidation","authors":"A. A. Daryakenari, Davood Hosseini, A. Apostoluk, Christoph R. Muller, J. Delaunay","doi":"10.1109/NANO.2016.7751330","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751330","url":null,"abstract":"The catalyst support layer is fabricated by applying a DC electrophoretic deposition on a colloid consisting of dispersed nanographitic flakes along with magnesium ions in isopropyl alcohol. The thickness and conductivity of the deposited layers are controlled by varying the time of the voltage application in the electrophoretic deposition EPD technique. The catalyst supports are decorated by sputtering palladium nanostructures serving as the catalyst. The fabricated support layer with the optimum thickness exhibits an improved conductivity and electro-oxidation performance attaining 800 mA/cm2 per mg of palladium.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"4 1","pages":"354-356"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77508292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751321
Yafeng Chen, Shula L. Chen, T. Kiba, C. Lee, C. Thomas, Y. Lai, A. Higo, S. Samukawa, A. Murayama
We study transient photoluminescence (PL) in In0.2Ga0.8N nano-disks (NDs) fabricated from a 2 or 3 nm-thick quantum well (QW) by damage-free neutral-beam etching utilizing bio-nano-engineered etching templates. A lateral averaged diameter of the ND was controlled to be 9 nm with a high sheet-density up to 2.6×1011 cm-2. Transient PL in the NDs was measured as a function of temperature and compared with that in the mother QWs. Thermal quenching of PL is strongly suppressed in the NDs, while the PL intensity in the QWs rapidly decreases with increasing temperature. A PL-decay time in the NDs is 0.1 ns at 6 K, which is significantly shorter than that of 3.5 ns in the QW. The temperature dependence of the PL decaying property shows that a radiative decay time of 0.1 ns in the NDs is almost constant for temperature, while a non-radiative one decreases with increasing temperature. This significantly faster and relatively temperature-insensitive radiative decay time can be attribute to the strong confinement due to the ND formation in addition to strain relaxation.
{"title":"Transient photoluminescence in InGaN nano-disks fabricated by nano-scale neutral-beam etching utilizing bio-nano templates","authors":"Yafeng Chen, Shula L. Chen, T. Kiba, C. Lee, C. Thomas, Y. Lai, A. Higo, S. Samukawa, A. Murayama","doi":"10.1109/NANO.2016.7751321","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751321","url":null,"abstract":"We study transient photoluminescence (PL) in In0.2Ga0.8N nano-disks (NDs) fabricated from a 2 or 3 nm-thick quantum well (QW) by damage-free neutral-beam etching utilizing bio-nano-engineered etching templates. A lateral averaged diameter of the ND was controlled to be 9 nm with a high sheet-density up to 2.6×1011 cm-2. Transient PL in the NDs was measured as a function of temperature and compared with that in the mother QWs. Thermal quenching of PL is strongly suppressed in the NDs, while the PL intensity in the QWs rapidly decreases with increasing temperature. A PL-decay time in the NDs is 0.1 ns at 6 K, which is significantly shorter than that of 3.5 ns in the QW. The temperature dependence of the PL decaying property shows that a radiative decay time of 0.1 ns in the NDs is almost constant for temperature, while a non-radiative one decreases with increasing temperature. This significantly faster and relatively temperature-insensitive radiative decay time can be attribute to the strong confinement due to the ND formation in addition to strain relaxation.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"8 1","pages":"636-637"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76465543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-08-01DOI: 10.1109/NANO.2016.7751501
Yen-Ku Lin, S. Noda, R. Lee, Chia-Ching Huang, Q. Luc, S. Samukawa, E. Chang
An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.
报道了一种使用无损伤中性束蚀刻(NBE)栅极凹槽的具有低阈值电压滞后的增强模式AlGaN/GaN miss - hemt。NBE可以消除传统电感耦合等离子体反应刻蚀(ICP-RIE)中由紫外/紫外光子照射产生的等离子体诱导缺陷。结合新的栅极凹槽工艺和peal - aln界面钝化层，Al2O3/AlGaN/GaN增强模式HEMT器件的阈值电压为1.5 V，电流密度为449 mA/mm，三端击穿电压为432 V。在稳定的I-V曲线下，器件对阈值电压的迟滞也很小。
{"title":"Enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched gate recess","authors":"Yen-Ku Lin, S. Noda, R. Lee, Chia-Ching Huang, Q. Luc, S. Samukawa, E. Chang","doi":"10.1109/NANO.2016.7751501","DOIUrl":"https://doi.org/10.1109/NANO.2016.7751501","url":null,"abstract":"An enhancement-mode AlGaN/GaN MIS-HEMTs with low threshold voltage hysteresis using damage-free neutral beam etched (NBE) gate recess is reported. The NBE can eliminate the plasma-induced defects that generated by irradiating UV/VUV photons as encounted in the conventional inductively coupled plasma-reactive-ion etching (ICP-RIE). Combining the new gate recess process and PEALD-AlN interfacial passivation layer, the Al2O3/AlGaN/GaN enhancement-mode HEMT device shows a threshold voltage of 1.5 V and a current density of 449 mA/mm, and the three-terminal breakdown voltage was 432 V. The device also shows small hysteresis in threshold voltage at stable I-V curve.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"2 1","pages":"799-801"},"PeriodicalIF":0.0,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83499648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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