Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354980
Siti Sarah Binti Md Sallah, Sawal Hamid Md Ali, P. Menon, M. S. Islam, N. Juhari, S. A. Ahmad
This paper investigates and analyzes an Optical Interconnect (OI) link using external (indirect) modulation technique. A Continuous Wave (CW) light source with a Mach Zehnder (MZ) modulator is used in the transmitter part and a Si-based waveguide is used as a transmission path. Indium Gallium Arsenide (InGaAs) and Germanium (Ge) materials were applied to observe the performance of Avalanche Photodiode (APD) and P-I-N Photodiode (PIN). In order to evaluate the performance of OI link using external (indirect) modulation, the model of OI link was designed and simulated using OptiSPICE tools. Simulation results on the performance of MZ modulator, power degradation of OI link and receiver sensitivity are reported in this paper.
{"title":"Investigation on Optical Interconnect(OI) link performance using external modulator","authors":"Siti Sarah Binti Md Sallah, Sawal Hamid Md Ali, P. Menon, M. S. Islam, N. Juhari, S. A. Ahmad","doi":"10.1109/RSM.2015.7354980","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354980","url":null,"abstract":"This paper investigates and analyzes an Optical Interconnect (OI) link using external (indirect) modulation technique. A Continuous Wave (CW) light source with a Mach Zehnder (MZ) modulator is used in the transmitter part and a Si-based waveguide is used as a transmission path. Indium Gallium Arsenide (InGaAs) and Germanium (Ge) materials were applied to observe the performance of Avalanche Photodiode (APD) and P-I-N Photodiode (PIN). In order to evaluate the performance of OI link using external (indirect) modulation, the model of OI link was designed and simulated using OptiSPICE tools. Simulation results on the performance of MZ modulator, power degradation of OI link and receiver sensitivity are reported in this paper.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"30 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74636914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354959
N. A. Rashid, M. Noor, Z. M. Yusof
The availability of in-house microelectronic fabrication technology has given an opportunity for the development of chemical sensor based on field effect transistor (FET). Chemical sensing material deposited on the FET device is developed to explore the function as chemically sensitive field effect transistor (ChemFET) for the detection of specific analyte for agriculture and aquaculture applications. In this work, photocurable method was used to develop sensing membrane for Potassium ChemFET (K ChemFET) sensor. Urethane- and Acrylate-based host matrix polymer was selected for a comparative study as a sensing membrane for potassium ion detection. The performance of the sensor was characterized according to its sensitivity and selectivity. Performance test for K ChemFET sensor using both membrane types showed a comparable result with commercial K sensor with sensitivity of near Nernstian value and good linearity (> 0.99) in the range of 10-4 to 10-1 M calibration solution. Selectivity test demonstrated that K Acrylate-based ChemFET with one fold higher than K Urethane-based ChemFET towards Na+, Ca2+ and Mg2+ interfering ions.
{"title":"A comparative study of photocurable sensing membrane for Potassium ChemFET sensor","authors":"N. A. Rashid, M. Noor, Z. M. Yusof","doi":"10.1109/RSM.2015.7354959","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354959","url":null,"abstract":"The availability of in-house microelectronic fabrication technology has given an opportunity for the development of chemical sensor based on field effect transistor (FET). Chemical sensing material deposited on the FET device is developed to explore the function as chemically sensitive field effect transistor (ChemFET) for the detection of specific analyte for agriculture and aquaculture applications. In this work, photocurable method was used to develop sensing membrane for Potassium ChemFET (K ChemFET) sensor. Urethane- and Acrylate-based host matrix polymer was selected for a comparative study as a sensing membrane for potassium ion detection. The performance of the sensor was characterized according to its sensitivity and selectivity. Performance test for K ChemFET sensor using both membrane types showed a comparable result with commercial K sensor with sensitivity of near Nernstian value and good linearity (> 0.99) in the range of 10-4 to 10-1 M calibration solution. Selectivity test demonstrated that K Acrylate-based ChemFET with one fold higher than K Urethane-based ChemFET towards Na+, Ca2+ and Mg2+ interfering ions.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"44 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75283265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354974
Nor Afidatul Asni Semsudin, J. Sampe, M. Shabiul Islam, Ahmad Rifqi Md Zain, D. Berhanuddin
This work presents a designed of boost converter Hybrid Micro Energy Harvester (HMEH) using thermal and vibration of human body for biomedical application. Thermal converts temperature differences directly into electrical energy. While vibration is based on human movement like walking and shaking body that is able to generate an AC voltage. Having two sources overcome the limitation caused by a single source harvester and improves system functionality. The inputs are set to 0.2V, 0.3V and 0.5V to represent thermal, vibration and combination of thermal and vibration (hybrid) respectively. A rectifier is designed to convert vibration input from AC to DC voltages. The proposed boost converter is used to step-up the small input voltage from thermal and vibration at 2 kHz. The inductance is varied from 0.4μH to 1.2μH, 0.9μH to 2.9μH and 0.3μH to 0.9μH for vibration, thermal and hybrid input respectively. However, the optimize value for the designed is 0.9μH for all sources to achieve the regulated output of 2.0 to 4.0V. Both rectifier and boost converter circuit consist of MOSFET as the heart of the operation. In this paper, the circuits are designed, modeled and simulated using PSPICE software.
{"title":"Designing a boost converter of micro energy harvester using thermal and vibration input for biomedical devices","authors":"Nor Afidatul Asni Semsudin, J. Sampe, M. Shabiul Islam, Ahmad Rifqi Md Zain, D. Berhanuddin","doi":"10.1109/RSM.2015.7354974","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354974","url":null,"abstract":"This work presents a designed of boost converter Hybrid Micro Energy Harvester (HMEH) using thermal and vibration of human body for biomedical application. Thermal converts temperature differences directly into electrical energy. While vibration is based on human movement like walking and shaking body that is able to generate an AC voltage. Having two sources overcome the limitation caused by a single source harvester and improves system functionality. The inputs are set to 0.2V, 0.3V and 0.5V to represent thermal, vibration and combination of thermal and vibration (hybrid) respectively. A rectifier is designed to convert vibration input from AC to DC voltages. The proposed boost converter is used to step-up the small input voltage from thermal and vibration at 2 kHz. The inductance is varied from 0.4μH to 1.2μH, 0.9μH to 2.9μH and 0.3μH to 0.9μH for vibration, thermal and hybrid input respectively. However, the optimize value for the designed is 0.9μH for all sources to achieve the regulated output of 2.0 to 4.0V. Both rectifier and boost converter circuit consist of MOSFET as the heart of the operation. In this paper, the circuits are designed, modeled and simulated using PSPICE software.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"144 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82928376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355025
M. Ariannejad, P. Menon, S. Shaari, A. M. Md Zain, A. Ehsan, F. Larki, A. Abedini, V. Retnasamy
One reasonable and cost-effective method to sense chemicals such as ammonia is to use optical waveguides. In this work, the simulation of an optical single-mode splitter waveguide was executed to detect ammonia on the sensing arm. OptiBPM and Ionex softwares were used for the waveguide and ion exchange simulations respectively. The deepest and widest optical channel was produced when a concentration of Ag+ of 0.2 moles/m3 was used at a temperature of 350°C for duration of 35 minutes. The optical splitter designed in OptiBPM showed a change in the optical power with the presence of ammonia on the gold-coated sensing arm of the splitter. Therefore, the thermal ion change method is an alternative cost-effective method for the fabrication of optical biosensors.
{"title":"Design of optical single mode splitter using ion exchange method for ammonia biosensor","authors":"M. Ariannejad, P. Menon, S. Shaari, A. M. Md Zain, A. Ehsan, F. Larki, A. Abedini, V. Retnasamy","doi":"10.1109/RSM.2015.7355025","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355025","url":null,"abstract":"One reasonable and cost-effective method to sense chemicals such as ammonia is to use optical waveguides. In this work, the simulation of an optical single-mode splitter waveguide was executed to detect ammonia on the sensing arm. OptiBPM and Ionex softwares were used for the waveguide and ion exchange simulations respectively. The deepest and widest optical channel was produced when a concentration of Ag+ of 0.2 moles/m3 was used at a temperature of 350°C for duration of 35 minutes. The optical splitter designed in OptiBPM showed a change in the optical power with the presence of ammonia on the gold-coated sensing arm of the splitter. Therefore, the thermal ion change method is an alternative cost-effective method for the fabrication of optical biosensors.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89342465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354910
I. Saad, B. Hazwani, H. M. Zuhir, C. B. Seng, N. Bolong
This paper venture into prospective ideas of finding the best feasible candidates for future bio-based sensor by exploring an emerging device structure with elevated performance and reliable outcomes of vertical strained impact ionization MOSFET (VESIMOS) with dual strained SiGe and dielectric pocket (DP) technology. An overview of the simulated fabrication process and the performance of the three promising candidates for succession of the conventional vertical Impact Ionization MOSFET (IMOS): Single Channel vertical strained impact ionization MOSFET (SC-VESIMOS) [13], Dual Channel vertical strained impact ionization MOSFET (DC-VESIMOS) [14] and vertical strained impact ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) is investigated using Silvaco package. These three devices offer possibilities to overcome physical limits occurring during the continuous shrinking process like the limitation of the subthreshold swing S to 60 mV/dec at room temperature or rising leakage currents due to tunneling. The performance of these novel devices can be extremely promising for applications where ultra-high sensitivity and fast response is desirable. An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Eventually, these devices will prolong the increase density of transistor on a chip for future application of biosensor nanoelectronics.
{"title":"The vertical strained impact ionization MOSFET (VESIMOS) for ultra-sensitive biosensor application","authors":"I. Saad, B. Hazwani, H. M. Zuhir, C. B. Seng, N. Bolong","doi":"10.1109/RSM.2015.7354910","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354910","url":null,"abstract":"This paper venture into prospective ideas of finding the best feasible candidates for future bio-based sensor by exploring an emerging device structure with elevated performance and reliable outcomes of vertical strained impact ionization MOSFET (VESIMOS) with dual strained SiGe and dielectric pocket (DP) technology. An overview of the simulated fabrication process and the performance of the three promising candidates for succession of the conventional vertical Impact Ionization MOSFET (IMOS): Single Channel vertical strained impact ionization MOSFET (SC-VESIMOS) [13], Dual Channel vertical strained impact ionization MOSFET (DC-VESIMOS) [14] and vertical strained impact ionization MOSFET incorporating Dielectric Pocket (VESIMOS-DP) is investigated using Silvaco package. These three devices offer possibilities to overcome physical limits occurring during the continuous shrinking process like the limitation of the subthreshold swing S to 60 mV/dec at room temperature or rising leakage currents due to tunneling. The performance of these novel devices can be extremely promising for applications where ultra-high sensitivity and fast response is desirable. An ultra-low power with low Subthreshold Swing and high breakdown voltage are imperative for ultra-sensitive biosensor. Eventually, these devices will prolong the increase density of transistor on a chip for future application of biosensor nanoelectronics.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75580403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354960
M. Zakaria, M. Omar, A. H. Azman, U. Hashim, M. K. Md Arshad
Surface Acoustic Wave (SAW) device uses piezoelectric effect to generate acoustic wave on the piezoelectric substrate by using Interdigital Transducers (IDT). Early application was in telecommunication field as filter and resonators. However, due its sensitivity to mass, viscosity and velocity changes on the path between two IDTs, it is used as biosensors. In this project, the focus will be on fabrication and characterization of the IDTs parameter of the SAW device using conventional photolithography and lift-off technique. Finger width, acoustic aperture and number of IDT finger pairs were varied to analyze its effect on the resistance, coupling capacitance, and frequency response. After the lift-off technique, the completed SAW devices were characterized with respect to its parameter for its current-voltage, capacitance-voltage and frequency response. SAW device with more IDT fingers, higher finger width and acoustic aperture produce lower lead resistance and higher capacitance.
{"title":"Fabrication and characterization of SAW IDT biosensor for biomolecule detection","authors":"M. Zakaria, M. Omar, A. H. Azman, U. Hashim, M. K. Md Arshad","doi":"10.1109/RSM.2015.7354960","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354960","url":null,"abstract":"Surface Acoustic Wave (SAW) device uses piezoelectric effect to generate acoustic wave on the piezoelectric substrate by using Interdigital Transducers (IDT). Early application was in telecommunication field as filter and resonators. However, due its sensitivity to mass, viscosity and velocity changes on the path between two IDTs, it is used as biosensors. In this project, the focus will be on fabrication and characterization of the IDTs parameter of the SAW device using conventional photolithography and lift-off technique. Finger width, acoustic aperture and number of IDT finger pairs were varied to analyze its effect on the resistance, coupling capacitance, and frequency response. After the lift-off technique, the completed SAW devices were characterized with respect to its parameter for its current-voltage, capacitance-voltage and frequency response. SAW device with more IDT fingers, higher finger width and acoustic aperture produce lower lead resistance and higher capacitance.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77242667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355010
Sim Ming Dau, Oh Sang Hun, C. C. Chin, Lee Eng Eng, You Hyuk Joon, Lee Boon Chun
This paper shows the study of the effect of etch by product towards photoresist residue defect found in Polysilicon-Insulator-Polysilicon (PIP) processes. Initial finding show the correlation with the big size poly PIP capacitor structure. Therefore, the challenge was to focus on big size PIP structure. But during partition check, we found the weakness of the photoresist stripping during O2 plasma ashing. The weakness show not only big size pattern but also small size area. Through EDX analysis, we found Si byproduct block oxygen reaction with photoresist. As a consequence, following sulfuric clean has no margin to remove all photoresist which cause photoresist residue on big size of pattern. Several approaches were carried out to identify the optimal solution for defect removal. And, it was found that the additional sulfuric clean without HF is best solution. The photoresist residue defect was then eliminated completely with the new cleaning condition.
{"title":"Photoresist residue defect by etch byproduct on PIP etch process","authors":"Sim Ming Dau, Oh Sang Hun, C. C. Chin, Lee Eng Eng, You Hyuk Joon, Lee Boon Chun","doi":"10.1109/RSM.2015.7355010","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355010","url":null,"abstract":"This paper shows the study of the effect of etch by product towards photoresist residue defect found in Polysilicon-Insulator-Polysilicon (PIP) processes. Initial finding show the correlation with the big size poly PIP capacitor structure. Therefore, the challenge was to focus on big size PIP structure. But during partition check, we found the weakness of the photoresist stripping during O2 plasma ashing. The weakness show not only big size pattern but also small size area. Through EDX analysis, we found Si byproduct block oxygen reaction with photoresist. As a consequence, following sulfuric clean has no margin to remove all photoresist which cause photoresist residue on big size of pattern. Several approaches were carried out to identify the optimal solution for defect removal. And, it was found that the additional sulfuric clean without HF is best solution. The photoresist residue defect was then eliminated completely with the new cleaning condition.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"184 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77305936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354958
Anuroop, D. Bansal, Prem Kumar, M. Kaur, K. Rangra
Conventional bonding techniques like fusion, glass frit, soldering, eutectic, and anodic bonding, have been used in packaging for micro-electro-mechanical systems (MEMS). These bonding techniques require high temperature which results in bending/buckling of MEMS devices especially in case of hanging structures. In this work, low temperature and low cost bonding techniques with commercially available epoxy 320 NC and photoresist SU-8 2010 are done. Bonding with commercially available epoxy 320 NC at room temperature leads to spreading of epoxy in device region and affects the device performance. To define bonding ring dimensions, photoresist SU 8 2010 is used as an adhesive. Sharp dimensions of SU 8 2010 bonding ring are achieved using lithography. Top silicon cap is fabricated using TMAH etching. The bonds made with these techniques gave good shear strength, as measured with an indigenous setup.
{"title":"Low temperature bonding techniques for MEMS devices","authors":"Anuroop, D. Bansal, Prem Kumar, M. Kaur, K. Rangra","doi":"10.1109/RSM.2015.7354958","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354958","url":null,"abstract":"Conventional bonding techniques like fusion, glass frit, soldering, eutectic, and anodic bonding, have been used in packaging for micro-electro-mechanical systems (MEMS). These bonding techniques require high temperature which results in bending/buckling of MEMS devices especially in case of hanging structures. In this work, low temperature and low cost bonding techniques with commercially available epoxy 320 NC and photoresist SU-8 2010 are done. Bonding with commercially available epoxy 320 NC at room temperature leads to spreading of epoxy in device region and affects the device performance. To define bonding ring dimensions, photoresist SU 8 2010 is used as an adhesive. Sharp dimensions of SU 8 2010 bonding ring are achieved using lithography. Top silicon cap is fabricated using TMAH etching. The bonds made with these techniques gave good shear strength, as measured with an indigenous setup.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"87 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76159409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7354997
B. Mathew, A. Alazzam, Mohammad Abutayeh, I. Stiharu
This article documents the development of a dynamic model for predicting the trajectory of microparticles in a DEP-FFF microfluidic device. The electrode configuration is such that the top and bottom surfaces support multiple finite sized electrodes in the range of few micrometers. The electric potential inside the microchannel takes the form of Laplace equation while the equations of motion are based on Newton's second law. The forces considered include that due to inertia, drag, gravity, buoyancy and dielectrophoresis. All governing equations are solved using finite difference method with a spatial step size of 0.5 μm and temporal step size of 10-4s. In addition, a parametric study is carried out in order to understand the individual influence of operating and geometric parameters on the path of microparticles. The parameters considered include microparticle radius, actuation voltage, volumetric flow rate and microchannel height. It is found that all parameters influence the transient trajectory of microparticles while only a few parameters influence the final levitation height of microparticles.
{"title":"Modeling microparticles' path in DEP-FFF microfludic devices","authors":"B. Mathew, A. Alazzam, Mohammad Abutayeh, I. Stiharu","doi":"10.1109/RSM.2015.7354997","DOIUrl":"https://doi.org/10.1109/RSM.2015.7354997","url":null,"abstract":"This article documents the development of a dynamic model for predicting the trajectory of microparticles in a DEP-FFF microfluidic device. The electrode configuration is such that the top and bottom surfaces support multiple finite sized electrodes in the range of few micrometers. The electric potential inside the microchannel takes the form of Laplace equation while the equations of motion are based on Newton's second law. The forces considered include that due to inertia, drag, gravity, buoyancy and dielectrophoresis. All governing equations are solved using finite difference method with a spatial step size of 0.5 μm and temporal step size of 10-4s. In addition, a parametric study is carried out in order to understand the individual influence of operating and geometric parameters on the path of microparticles. The parameters considered include microparticle radius, actuation voltage, volumetric flow rate and microchannel height. It is found that all parameters influence the transient trajectory of microparticles while only a few parameters influence the final levitation height of microparticles.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"11 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91108025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-12-17DOI: 10.1109/RSM.2015.7355008
N. Burham, A. A. Hamzah, B. Majlis
This paper studies the etching process of <;100> silicon wafers in Potassium Hydroxide (KOH) solution by patterning the silicon nitride with a square frame. The mutual relationship of the etching rate and temperature variation has been analysed. Particular additives like isopropyl alcohol can be added to the KOH solution to improve the smoothness of the surface plane. This smooth surface is necessary to produce pores on the silicon membrane. The addition of 10% IPA is proven to improve the surface roughness and increase the etching rate. This is verified by inspecting the substrate under AFM and optical microscopy. The micro pipes produced after an etching process were also reduced using the IPA.
{"title":"Effect of isopropyl alcohol (IPA) on etching rate and surface roughness of silicon etched in KOH solution","authors":"N. Burham, A. A. Hamzah, B. Majlis","doi":"10.1109/RSM.2015.7355008","DOIUrl":"https://doi.org/10.1109/RSM.2015.7355008","url":null,"abstract":"This paper studies the etching process of <;100> silicon wafers in Potassium Hydroxide (KOH) solution by patterning the silicon nitride with a square frame. The mutual relationship of the etching rate and temperature variation has been analysed. Particular additives like isopropyl alcohol can be added to the KOH solution to improve the smoothness of the surface plane. This smooth surface is necessary to produce pores on the silicon membrane. The addition of 10% IPA is proven to improve the surface roughness and increase the etching rate. This is verified by inspecting the substrate under AFM and optical microscopy. The micro pipes produced after an etching process were also reduced using the IPA.","PeriodicalId":6667,"journal":{"name":"2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM)","volume":"52 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90576064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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