The disclination of a bulk crystalline lattice could host strongly localized states protected by quantized fractional charges, known as disclination states. Although disclination states of topological crystalline insulators have been extensively explored in wave systems, i.e., electromagnetic and acoustic wave systems, their experimental realizations in the diffusion process, particularly thermal diffusion, have remained underdeveloped. To bridge this gap, we theoretically model and experimentally measure topologically protected disclination states in C4, C5, and C7-symmetric thermal crystalline lattices composed of aluminum disks. The temperature evolution is tied to an effective Hamiltonian hosting topological disclination modes, which have a diffusion rate that is robust against defects. Our findings extend topological disclination phases and the physics of fractional charges from Hermitian to anti-Hermitian systems, opening new avenues for future research in thermal information processing and temperature management processes that are robust against disturbances.
{"title":"Topological thermal crystalline insulators","authors":"Siming Li, Haotian Wu, Jingjing Zhang, Rimi Banerjee, Linyang Zou, Yueqian Zhang, Hao Hu, Yidong Chong, Qi Jie Wang, Yu Luo","doi":"10.1063/5.0292394","DOIUrl":"https://doi.org/10.1063/5.0292394","url":null,"abstract":"The disclination of a bulk crystalline lattice could host strongly localized states protected by quantized fractional charges, known as disclination states. Although disclination states of topological crystalline insulators have been extensively explored in wave systems, i.e., electromagnetic and acoustic wave systems, their experimental realizations in the diffusion process, particularly thermal diffusion, have remained underdeveloped. To bridge this gap, we theoretically model and experimentally measure topologically protected disclination states in C4, C5, and C7-symmetric thermal crystalline lattices composed of aluminum disks. The temperature evolution is tied to an effective Hamiltonian hosting topological disclination modes, which have a diffusion rate that is robust against defects. Our findings extend topological disclination phases and the physics of fractional charges from Hermitian to anti-Hermitian systems, opening new avenues for future research in thermal information processing and temperature management processes that are robust against disturbances.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145202954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Succinonitrile (SN)-based composite polymer electrolytes offer high ionic conductivity and flexibility for solid-state lithium metal batteries (SSLMBs); however, they suffer from cyano group-induced interfacial side reactions and PVDF's crystallinity-driven performance limitations. Herein, we introduce semiconductor waste-derived LiGaO2 (LGO) as a multifunctional additive to address these challenges. LGO's high-dielectric constant modulates PVDF-HFP crystallization into disordered amorphous domains, reducing interfacial resistance and enhancing exchange current density. Simultaneously, LGO promotes LiTFSI dissociation via dipole interactions while anchoring SN molecules, suppressing migration and side reactions. The optimized electrolyte achieves an ionic conductivity of 1.24 × 10−3 S·cm−1, a transference number of 0.67, an activation energy of 0.13 eV, and a critical current density of 0.8 mA·cm−2 at 45 °C. Symmetric Li cells show stable cycling, while LiCoO2/Li batteries exhibit superior rate performance (111.8 mAh·g−1 at 2 C) and retain 61.4% capacity after 100 cycles at 0.5 C with 99.2% average Coulombic efficiency. These findings reveal the core mechanism of high-dielectric constant nanomaterials in regulating crystallization kinetics and promoting internal ionic transport in multicomponent polymer electrolytes, providing new directions for the development of SSLMBs.
{"title":"Semiconductor waste-derived LiGaO2: A multifunctional regulator for crystallization, ion transport, and stability in polymer electrolytes","authors":"Weiliang Gong, Jianming Tao, Yanhuang Cai, Junlin Wu, Zhicheng Zhang, Chenlong Chen, Zhigao Huang, Yingbin Lin","doi":"10.1063/5.0281318","DOIUrl":"https://doi.org/10.1063/5.0281318","url":null,"abstract":"Succinonitrile (SN)-based composite polymer electrolytes offer high ionic conductivity and flexibility for solid-state lithium metal batteries (SSLMBs); however, they suffer from cyano group-induced interfacial side reactions and PVDF's crystallinity-driven performance limitations. Herein, we introduce semiconductor waste-derived LiGaO2 (LGO) as a multifunctional additive to address these challenges. LGO's high-dielectric constant modulates PVDF-HFP crystallization into disordered amorphous domains, reducing interfacial resistance and enhancing exchange current density. Simultaneously, LGO promotes LiTFSI dissociation via dipole interactions while anchoring SN molecules, suppressing migration and side reactions. The optimized electrolyte achieves an ionic conductivity of 1.24 × 10−3 S·cm−1, a transference number of 0.67, an activation energy of 0.13 eV, and a critical current density of 0.8 mA·cm−2 at 45 °C. Symmetric Li cells show stable cycling, while LiCoO2/Li batteries exhibit superior rate performance (111.8 mAh·g−1 at 2 C) and retain 61.4% capacity after 100 cycles at 0.5 C with 99.2% average Coulombic efficiency. These findings reveal the core mechanism of high-dielectric constant nanomaterials in regulating crystallization kinetics and promoting internal ionic transport in multicomponent polymer electrolytes, providing new directions for the development of SSLMBs.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"37 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145153771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang-Yang Lv, Xiao Li, Yong Zhang, Qi-Xun Wen, Su-Tao Sun, Cao Lin, Bin Pang, Y. B. Chen, Shu-Hua Yao, Jian Zhou, Yan-Feng Chen
The chiral magnetic effect (CME) is a quantum phenomenon arising from the breaking of chiral symmetry in relativistic Weyl fermions due to quantum fluctuations under parallel electric (E) and magnetic fields (B). Intuitively, Weyl fermions with opposite chirality, under the stimulus of parallel E and B, will have different chemical potentials that give rise to an extra current, whose role is like a chiral battery in solids. However, up until now, the experimental evidence for the chiral magnetic effect is the negative longitudinal magnetoresistance, rather than a chiral electric source. Here, different from previous reports, we observed a giant chiral magnetic effect evidenced by “negative” resistance and corresponding voltage–current curves located in the second-fourth quadrant in the type-II Weyl semimetal WP2+δ. These phenomena occur under the following conditions: the misalignment angle between B and E is smaller than 20°, the temperature is below 40 K, the externally applied electrical current is less than 50 mA, and the magnetic field is larger than 3 T. Phenomenologically, based on the macroscopic Chern–Simons–Maxwell equation, this giant chiral magnetic effect observed in WP2+δ is attributed to the chirality of Weyl fermions possessing a two-order longer coherent time than the Drude transport relaxation time. Our findings provide evidence of the giant chiral-magnetic/chiral-battery effect in Weyl semimetals.
{"title":"Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP2+δ crystals","authors":"Yang-Yang Lv, Xiao Li, Yong Zhang, Qi-Xun Wen, Su-Tao Sun, Cao Lin, Bin Pang, Y. B. Chen, Shu-Hua Yao, Jian Zhou, Yan-Feng Chen","doi":"10.1063/5.0260214","DOIUrl":"https://doi.org/10.1063/5.0260214","url":null,"abstract":"The chiral magnetic effect (CME) is a quantum phenomenon arising from the breaking of chiral symmetry in relativistic Weyl fermions due to quantum fluctuations under parallel electric (E) and magnetic fields (B). Intuitively, Weyl fermions with opposite chirality, under the stimulus of parallel E and B, will have different chemical potentials that give rise to an extra current, whose role is like a chiral battery in solids. However, up until now, the experimental evidence for the chiral magnetic effect is the negative longitudinal magnetoresistance, rather than a chiral electric source. Here, different from previous reports, we observed a giant chiral magnetic effect evidenced by “negative” resistance and corresponding voltage–current curves located in the second-fourth quadrant in the type-II Weyl semimetal WP2+δ. These phenomena occur under the following conditions: the misalignment angle between B and E is smaller than 20°, the temperature is below 40 K, the externally applied electrical current is less than 50 mA, and the magnetic field is larger than 3 T. Phenomenologically, based on the macroscopic Chern–Simons–Maxwell equation, this giant chiral magnetic effect observed in WP2+δ is attributed to the chirality of Weyl fermions possessing a two-order longer coherent time than the Drude transport relaxation time. Our findings provide evidence of the giant chiral-magnetic/chiral-battery effect in Weyl semimetals.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"22 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145133845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stephen J. Pearton, Fan Ren, A. Y. Polyakov, Aman Haque, Madani Labed, You Seung Rim
Gallium oxide (Ga2O3) has been the subject of extensive research over the past decade due to its potential in next-generation power electronics and solar-blind ultraviolet (UV) photodetectors. While Ga2O3 exhibits promising material characteristics for applications in harsh environments, its commercial viability remains under debate, particularly when compared to materials such as aluminum nitride (AlN) and diamond, which possess superior intrinsic properties. This perspective addresses the critical challenges that currently impede the widespread commercialization of Ga2O3-based devices. These challenges include a relatively immature technology base, the difficulty in achieving stable p-type conductivity, inherently low thermal conductivity, the presence of crystallographic defects (nano- and micro-voids), and elevated fabrication costs, all of which negatively impact device reliability and scalability. Mitigation strategies, such as heterojunction implementation, the development of thermal management solutions such as wafer bonding, and defect passivation approaches, are also under investigation. The near-term feasibility of commercially viable Ga2O3-based power electronic devices is a central focus of this discussion. The current status is that Ga2O3 development is far advanced relative to either diamond or especially AlN power electronics but is hampered by lack of a broad base of substrate vendors and a compelling vision for device implementations that provide sufficient improvement over SiC power devices. There are strong geographic differences in device focus, with China prioritizing implementation in grid applications while the United States/Europe appear to consider Ga2O3 devices more for defense and aerospace applications.
{"title":"Status of Ga2O3 for power device and UV photodetector applications","authors":"Stephen J. Pearton, Fan Ren, A. Y. Polyakov, Aman Haque, Madani Labed, You Seung Rim","doi":"10.1063/5.0285075","DOIUrl":"https://doi.org/10.1063/5.0285075","url":null,"abstract":"Gallium oxide (Ga2O3) has been the subject of extensive research over the past decade due to its potential in next-generation power electronics and solar-blind ultraviolet (UV) photodetectors. While Ga2O3 exhibits promising material characteristics for applications in harsh environments, its commercial viability remains under debate, particularly when compared to materials such as aluminum nitride (AlN) and diamond, which possess superior intrinsic properties. This perspective addresses the critical challenges that currently impede the widespread commercialization of Ga2O3-based devices. These challenges include a relatively immature technology base, the difficulty in achieving stable p-type conductivity, inherently low thermal conductivity, the presence of crystallographic defects (nano- and micro-voids), and elevated fabrication costs, all of which negatively impact device reliability and scalability. Mitigation strategies, such as heterojunction implementation, the development of thermal management solutions such as wafer bonding, and defect passivation approaches, are also under investigation. The near-term feasibility of commercially viable Ga2O3-based power electronic devices is a central focus of this discussion. The current status is that Ga2O3 development is far advanced relative to either diamond or especially AlN power electronics but is hampered by lack of a broad base of substrate vendors and a compelling vision for device implementations that provide sufficient improvement over SiC power devices. There are strong geographic differences in device focus, with China prioritizing implementation in grid applications while the United States/Europe appear to consider Ga2O3 devices more for defense and aerospace applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"17 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145133773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Green hydrogen (H2) production via water electrolysis offers a sustainable pathway to decarbonize various industries, driven by its potential to replace fossil fuels and achieve carbon neutrality. Traditional approaches to catalyst development for H2 production, such as electrochemical catalysis (EC), photoelectrochemical catalysis (PEC), and photocatalysis (PC), have predominantly relied on empirical, trial-and-error methods. While significant progress has been made, these methods are time-consuming, costly, and limited by the complexity of multicomponent catalysts and reaction systems. In recent years, artificial intelligence (AI) and machine learning (ML) have emerged as transformative tools for accelerating catalyst discovery and optimization. AI-driven approaches enable high-throughput screening of materials, prediction of catalyst performance, and real-time reaction mechanisms, offering a more efficient alternative to conventional experimentation. This review examines the current state of catalyst development for green H2 production, highlighting the role of AI in optimizing hydrogen evolution and oxygen evolution reactions (HER/OER). We explore advancements in electrochemical, photoelectrochemical, and photocatalytic systems, emphasizing the potential of AI to revolutionize the field. By integrating AI with experimental techniques, researchers are poised to achieve breakthroughs in efficiency, scalability, and cost-effectiveness, accelerating the transition toward a sustainable, hydrogen-powered future.
{"title":"Prospects of AI in advancing green hydrogen production: From materials to applications","authors":"Doudou Zhang, Weisheng Pan, Haijiao Lu, Zhiliang Wang, Bikesh Gupta, Aman Maung Than Oo, Lianzhou Wang, Karsten Reuter, Haobo Li, Yijiao Jiang, Siva Karuturi","doi":"10.1063/5.0281416","DOIUrl":"https://doi.org/10.1063/5.0281416","url":null,"abstract":"Green hydrogen (H2) production via water electrolysis offers a sustainable pathway to decarbonize various industries, driven by its potential to replace fossil fuels and achieve carbon neutrality. Traditional approaches to catalyst development for H2 production, such as electrochemical catalysis (EC), photoelectrochemical catalysis (PEC), and photocatalysis (PC), have predominantly relied on empirical, trial-and-error methods. While significant progress has been made, these methods are time-consuming, costly, and limited by the complexity of multicomponent catalysts and reaction systems. In recent years, artificial intelligence (AI) and machine learning (ML) have emerged as transformative tools for accelerating catalyst discovery and optimization. AI-driven approaches enable high-throughput screening of materials, prediction of catalyst performance, and real-time reaction mechanisms, offering a more efficient alternative to conventional experimentation. This review examines the current state of catalyst development for green H2 production, highlighting the role of AI in optimizing hydrogen evolution and oxygen evolution reactions (HER/OER). We explore advancements in electrochemical, photoelectrochemical, and photocatalytic systems, emphasizing the potential of AI to revolutionize the field. By integrating AI with experimental techniques, researchers are poised to achieve breakthroughs in efficiency, scalability, and cost-effectiveness, accelerating the transition toward a sustainable, hydrogen-powered future.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"58 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145127684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liu Yang, Xiaotong Zhang, Hanchen Wang, Jinlong Wang, Yiming Sun, Lei Liu, Zhiyuan Zhao, Yumin Yang, Dahai Wei, Dong Pan, Jianhua Zhao, Jian Shen, Weisheng Zhao, Haichang Lu, Haiming Yu, Wenbin Wang, Na Lei
The Dzyaloshinskii–Moriya interaction (DMI) is pivotal in stabilizing topological spin textures, a critical aspect of the rapidly advancing field of oxide-based spintronics. While skyrmions and the topological Hall effect have been widely studied in oxide films, experimental verification of interfacial DMI and its underlying mechanisms in oxide interfaces has remained largely unexplored. In this study, we report a significantly large interfacial DMI in La0.7Sr0.3MnO3 (LSMO) films grown on NdGaO3 substrates, with a DMI coefficient of 1.96 pJ/m—one to two orders of magnitude higher than previously observed in oxide systems. Our experiments, coupled with first-principles calculations, reveal that enhanced spin–orbit coupling at the LSMO/NdGaO3 interface, driven by a synergy between the 6s electrons of Nd and the 4f electrons, is the key to this large DMI. This breakthrough opens new avenues for controlling chiral spintronics in oxide-based materials, laying the groundwork for next-generation spintronic and magnonic devices.
{"title":"Large interfacial Dzyaloshinskii–Moriya interaction of epitaxial perovskite La0.7Sr0.3MnO3 films","authors":"Liu Yang, Xiaotong Zhang, Hanchen Wang, Jinlong Wang, Yiming Sun, Lei Liu, Zhiyuan Zhao, Yumin Yang, Dahai Wei, Dong Pan, Jianhua Zhao, Jian Shen, Weisheng Zhao, Haichang Lu, Haiming Yu, Wenbin Wang, Na Lei","doi":"10.1063/5.0268251","DOIUrl":"https://doi.org/10.1063/5.0268251","url":null,"abstract":"The Dzyaloshinskii–Moriya interaction (DMI) is pivotal in stabilizing topological spin textures, a critical aspect of the rapidly advancing field of oxide-based spintronics. While skyrmions and the topological Hall effect have been widely studied in oxide films, experimental verification of interfacial DMI and its underlying mechanisms in oxide interfaces has remained largely unexplored. In this study, we report a significantly large interfacial DMI in La0.7Sr0.3MnO3 (LSMO) films grown on NdGaO3 substrates, with a DMI coefficient of 1.96 pJ/m—one to two orders of magnitude higher than previously observed in oxide systems. Our experiments, coupled with first-principles calculations, reveal that enhanced spin–orbit coupling at the LSMO/NdGaO3 interface, driven by a synergy between the 6s electrons of Nd and the 4f electrons, is the key to this large DMI. This breakthrough opens new avenues for controlling chiral spintronics in oxide-based materials, laying the groundwork for next-generation spintronic and magnonic devices.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"44 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145127685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The realization of multiple electronic states on ultrafast sub-picosecond timescales can be leveraged to develop energy-efficient terahertz (THz) photonic devices. Such explorations are pursued in the framework of femtosecond optical excitation with THz probes wherein either negative or positive photoconductivity manifests in metallic and insulating states, respectively. Co-existence of both states is highly desired but rarely observed. Here, a strategy is devised exploiting crystalline transport anisotropy and hetero-epitaxy in a multi-band nickelate to demonstrate switching of the positive to the negative sign of photoconductivity on a sub-picosecond timescale. This combines with a profound anisotropy of THz photoconductivity in unconventional (111) epitaxial films having preferential arrangement of oxygen vacancies along selective crystal axes—a framework that reversibly modulates the anisotropy of negative THz photoconductivity using oxygen content as a control parameter, and corroborated by theoretical calculations. Thus, ultrafast switching between negative, positive, and zero photoconductive states in timescales of a few picoseconds at room temperature, as demonstrated in this study, holds a remarkable prospect for creating multiple channels of information processing. A proof-of-concept experiment to utilize these photo-controlled states is proposed for a three-state THz communication system, which would transmit a larger volume of information vis-a-vis that of a binary communication system.
{"title":"Extraordinary three-state terahertz transient conductivity switching at room temperature in multi-band nickelates for high-speed communication","authors":"Sanjeev Kumar, Brijesh Singh Mehra, Gaurav Dubey, Prakhar Vashishtha, Neeraj Bhatt, Ravi Shankar Singh, Dhanvir Singh Rana","doi":"10.1063/5.0267090","DOIUrl":"https://doi.org/10.1063/5.0267090","url":null,"abstract":"The realization of multiple electronic states on ultrafast sub-picosecond timescales can be leveraged to develop energy-efficient terahertz (THz) photonic devices. Such explorations are pursued in the framework of femtosecond optical excitation with THz probes wherein either negative or positive photoconductivity manifests in metallic and insulating states, respectively. Co-existence of both states is highly desired but rarely observed. Here, a strategy is devised exploiting crystalline transport anisotropy and hetero-epitaxy in a multi-band nickelate to demonstrate switching of the positive to the negative sign of photoconductivity on a sub-picosecond timescale. This combines with a profound anisotropy of THz photoconductivity in unconventional (111) epitaxial films having preferential arrangement of oxygen vacancies along selective crystal axes—a framework that reversibly modulates the anisotropy of negative THz photoconductivity using oxygen content as a control parameter, and corroborated by theoretical calculations. Thus, ultrafast switching between negative, positive, and zero photoconductive states in timescales of a few picoseconds at room temperature, as demonstrated in this study, holds a remarkable prospect for creating multiple channels of information processing. A proof-of-concept experiment to utilize these photo-controlled states is proposed for a three-state THz communication system, which would transmit a larger volume of information vis-a-vis that of a binary communication system.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"190 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jung-Wook Park, Michael Auer, Chae-Won Lee, Ga-Eun Yoon, Yun-Sang Lee, Jeong-A Yang, Woojin Yoon, Hoseop Yun, Uros Puc, Chaeyoon Kim, Fabian Rotermund, Mojca Jazbinsek, O-Pil Kwon
Organic terahertz (THz) crystals exhibit complex and often unpredictable relationships among their chemical structures, crystal structures, and physical properties. This complexity makes it highly challenging to optimize crystals for efficient THz generation. Here, we introduce a design strategy based on isomorphic ionic organic crystal families to develop new organic nonlinear optical crystals that efficiently generate ultra-broadband THz waves extending up to 15 THz. Using three nonlinear optical cationic chromophores with different interionic assembly types, each combined with three molecular anions featuring different substituents (non-polar methyl or polar chloro and bromo groups), we investigated nine ionic crystals, including four reported here for the first time. The crystal members within each isomorphic crystal family show nearly identical crystal structures (i.e., isomorphic crystal structures), all of them achieving top-level macroscopic second-order optical nonlinearity and efficient ultrabroad THz wave generation capabilities. Remarkably, their physical (and terahertz) properties within each isomorphic crystal family differ dramatically according to a certain order of the introduced anions, and this ordering trend persists across all three isomorphic crystal families. These results provide a crucial advancement in the design and prediction of macroscopic properties in ionic organic THz and nonlinear optical crystals, marking an important step toward rational crystal design exhibiting enhanced physical properties.
{"title":"Isomorphic organic crystal families: Analogous crystal structure with largely different physical and terahertz properties","authors":"Jung-Wook Park, Michael Auer, Chae-Won Lee, Ga-Eun Yoon, Yun-Sang Lee, Jeong-A Yang, Woojin Yoon, Hoseop Yun, Uros Puc, Chaeyoon Kim, Fabian Rotermund, Mojca Jazbinsek, O-Pil Kwon","doi":"10.1063/5.0280312","DOIUrl":"https://doi.org/10.1063/5.0280312","url":null,"abstract":"Organic terahertz (THz) crystals exhibit complex and often unpredictable relationships among their chemical structures, crystal structures, and physical properties. This complexity makes it highly challenging to optimize crystals for efficient THz generation. Here, we introduce a design strategy based on isomorphic ionic organic crystal families to develop new organic nonlinear optical crystals that efficiently generate ultra-broadband THz waves extending up to 15 THz. Using three nonlinear optical cationic chromophores with different interionic assembly types, each combined with three molecular anions featuring different substituents (non-polar methyl or polar chloro and bromo groups), we investigated nine ionic crystals, including four reported here for the first time. The crystal members within each isomorphic crystal family show nearly identical crystal structures (i.e., isomorphic crystal structures), all of them achieving top-level macroscopic second-order optical nonlinearity and efficient ultrabroad THz wave generation capabilities. Remarkably, their physical (and terahertz) properties within each isomorphic crystal family differ dramatically according to a certain order of the introduced anions, and this ordering trend persists across all three isomorphic crystal families. These results provide a crucial advancement in the design and prediction of macroscopic properties in ionic organic THz and nonlinear optical crystals, marking an important step toward rational crystal design exhibiting enhanced physical properties.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"82 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Elizaveta I. Malevannaya, Viktor I. Polozov, Anton I. Ivanov, Aleksei R. Matanin, Nikita S. Smirnov, Vladimir V. Echeistov, Dmitry O. Moskalev, Dmitry A. Mikhalin, Denis E. Shirokov, Yuri V. Panfilov, Ilya A. Ryzhikov, Aleksander V. Andriyash, Ilya A. Rodionov
In this review, we provide a practical guide to superconducting quantum circuits protection from broadband electromagnetic and infrared radiation using cryogenic shielding and microwave line filtering. Recently, superconducting multi-qubit processors demonstrated quantum supremacy and quantum error correction below the surface code threshold. However, the decoherence-induced loss of quantum information still remains a challenge for 100+ qubit quantum computing. Here, we review the key aspects of superconducting quantum circuits shielding from stray electromagnetic fields and infrared radiation—multilayer shielding design, materials, fridge line filtration, cryogenic setup configurations, and shielding efficiency evaluation methods developed over the last 10 years. In summary, we provide recommendations for the design of an efficient and compact shielding system, as well as microwave filtering for large-scale superconducting quantum systems.
{"title":"An engineering guide to superconducting quantum circuit shielding","authors":"Elizaveta I. Malevannaya, Viktor I. Polozov, Anton I. Ivanov, Aleksei R. Matanin, Nikita S. Smirnov, Vladimir V. Echeistov, Dmitry O. Moskalev, Dmitry A. Mikhalin, Denis E. Shirokov, Yuri V. Panfilov, Ilya A. Ryzhikov, Aleksander V. Andriyash, Ilya A. Rodionov","doi":"10.1063/5.0250262","DOIUrl":"https://doi.org/10.1063/5.0250262","url":null,"abstract":"In this review, we provide a practical guide to superconducting quantum circuits protection from broadband electromagnetic and infrared radiation using cryogenic shielding and microwave line filtering. Recently, superconducting multi-qubit processors demonstrated quantum supremacy and quantum error correction below the surface code threshold. However, the decoherence-induced loss of quantum information still remains a challenge for 100+ qubit quantum computing. Here, we review the key aspects of superconducting quantum circuits shielding from stray electromagnetic fields and infrared radiation—multilayer shielding design, materials, fridge line filtration, cryogenic setup configurations, and shielding efficiency evaluation methods developed over the last 10 years. In summary, we provide recommendations for the design of an efficient and compact shielding system, as well as microwave filtering for large-scale superconducting quantum systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"59 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145116370","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yizhe Liu, Qinshu Li, Fang Liu, Xinqiang Wang, Bo Sun
Non-Fourier thermal transports have drawn significant attention for decades. Among them, the frequency-dependent thermal conductivity has been extensively explored by pump-probe techniques, such as time-domain thermoreflectance, which is employed to probe the spectra of phonon mean free paths. However, previous studies on silicon have not exhibited apparent frequency dependence despite its broad phonon distribution. Here, we report the frequency-dependent thermal transport in Al/Si with an atomically sharp interface, where the matched Debye temperatures preserve the temperature difference between low- and high-energy phonons in Si and contribute as additional non-equilibrium thermal resistance. The dependence vanishes in Al/SiO2/Si at room temperature, since the SiO2 interlayer facilitates phonon scattering and destroys thermal non-equilibrium. At 80 K, frequency dependence reemerges in Al/SiO2/Si due to reduced interfacial phonon scattering, which is not sufficient to destroy the temperature difference between low- and high-energy phonons. The frequency dependence is weakened in the Al/Si sample at 500 K, originating from the enhanced phonon scattering rate in Si. Our findings highlight the significance of boundary conditions in frequency-dependent thermal conductivity.
{"title":"Boundary conditions dictate frequency dependence of thermal conductivity in silicon","authors":"Yizhe Liu, Qinshu Li, Fang Liu, Xinqiang Wang, Bo Sun","doi":"10.1063/5.0254248","DOIUrl":"https://doi.org/10.1063/5.0254248","url":null,"abstract":"Non-Fourier thermal transports have drawn significant attention for decades. Among them, the frequency-dependent thermal conductivity has been extensively explored by pump-probe techniques, such as time-domain thermoreflectance, which is employed to probe the spectra of phonon mean free paths. However, previous studies on silicon have not exhibited apparent frequency dependence despite its broad phonon distribution. Here, we report the frequency-dependent thermal transport in Al/Si with an atomically sharp interface, where the matched Debye temperatures preserve the temperature difference between low- and high-energy phonons in Si and contribute as additional non-equilibrium thermal resistance. The dependence vanishes in Al/SiO2/Si at room temperature, since the SiO2 interlayer facilitates phonon scattering and destroys thermal non-equilibrium. At 80 K, frequency dependence reemerges in Al/SiO2/Si due to reduced interfacial phonon scattering, which is not sufficient to destroy the temperature difference between low- and high-energy phonons. The frequency dependence is weakened in the Al/Si sample at 500 K, originating from the enhanced phonon scattering rate in Si. Our findings highlight the significance of boundary conditions in frequency-dependent thermal conductivity.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"26 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145089289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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