Longfei Chen, Hao Feng, Ying Zhang, Dong Liu, Qiang Li
The field of electrochemical CO2 reduction reaction (eCO2RR) is pursuing high operating current densities, eventually controlled by CO2 transport. Here, we develop a new multiscale modeling approach that is able to more generally describe the effects of the electric double layer (EDL) on CO2 transport over a wide potential window extending to utmost potentials. By leveraging it, we identify a distinct CO2-run-out regime where the supply of CO2 runs out due to the EDL steric effect from a dense layer of solvated cations with the maximum layer thickness equal to the solvated cation size. Consequently, CO2RR current density drops at a relatively negative transition potential generating a bell-shaped polarization curve, which is in contrast to the CO2-transport-limited regime where the current density reaches a plateau. Furthermore, we develop a graphical method, verified by experimental data, to generally predict the transition to the CO2-run-out regime. This work sheds new light on the EDL effects for catalyst design and electrolyzer engineering.
电化学二氧化碳还原反应（eCO2RR）领域正在追求高工作电流密度，最终受二氧化碳传输的控制。在此，我们开发了一种新的多尺度建模方法，能够更普遍地描述电双层（EDL）对二氧化碳传输的影响，其电位窗口可延伸至最大电位。利用这种方法，我们确定了一个独特的二氧化碳耗尽机制，在该机制中，由于溶解阳离子致密层的双电层立体效应，二氧化碳供应耗尽，而致密层的最大厚度等于溶解阳离子的尺寸。因此，CO2RR 电流密度会在相对负的过渡电势下下降，从而产生钟形极化曲线，这与 CO2 传输受限条件下的电流密度达到高原形成鲜明对比。此外，我们还开发了一种图形方法，并通过实验数据进行了验证，以大致预测向二氧化碳耗尽机制的过渡。这项研究为催化剂设计和电解槽工程揭示了 EDL 效应的新奥秘。
{"title":"Distinct CO2-run-out regime from steric effect of electric double layer in electrochemical CO2 reduction","authors":"Longfei Chen, Hao Feng, Ying Zhang, Dong Liu, Qiang Li","doi":"10.1063/5.0214255","DOIUrl":"https://doi.org/10.1063/5.0214255","url":null,"abstract":"The field of electrochemical CO2 reduction reaction (eCO2RR) is pursuing high operating current densities, eventually controlled by CO2 transport. Here, we develop a new multiscale modeling approach that is able to more generally describe the effects of the electric double layer (EDL) on CO2 transport over a wide potential window extending to utmost potentials. By leveraging it, we identify a distinct CO2-run-out regime where the supply of CO2 runs out due to the EDL steric effect from a dense layer of solvated cations with the maximum layer thickness equal to the solvated cation size. Consequently, CO2RR current density drops at a relatively negative transition potential generating a bell-shaped polarization curve, which is in contrast to the CO2-transport-limited regime where the current density reaches a plateau. Furthermore, we develop a graphical method, verified by experimental data, to generally predict the transition to the CO2-run-out regime. This work sheds new light on the EDL effects for catalyst design and electrolyzer engineering.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"2012 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141624831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Perovskite quantum dot-based light-emitting diodes (QLEDs) have been considered as a promising luminescent technology due to high color purity and wide color gamut. However, the realization of high-performance QLED is still hindered by near-perfect quantum dots (QDs) with efficient and stable exciton recombination behavior. Here, we proposed a ligand compensation (LC) strategy to optimize the QDs by introducing a ligand pair of tri-n-octylphosphine (TOP) and CsBr. The ligand pair could enhance the clarity and colloidal stability of the QD ink, facilitating the fabrication of highly smooth films. On one hand, TOP engages in interactions with Pb and effectively passivates the surface uncoordinated Pb2+. On the other hand, the supplement of CsBr provides a Br-rich environment to reduce Br vacancies (VBr). Through LC, QD films possess a high photoluminescence quantum efficiency of 82% and a shallow hole level, which enables efficient exciton recombination. In addition, the LC makes QD films exhibit stable exciton combination behavior and electrical transport characteristics. Resultantly, the LC-optimized QLEDs show a maximum external quantum efficiency (EQE) of 24.7% and an operational lifetime T50 of 182 h at an initial luminance of 100 cd m−2, which is obviously higher than that of the control device (EQE of 15.8%, T50 of 11 h). The proposed LC strategy for optimizing perovskite QDs presents a novel concept for achieving high-performance QLEDs and holds great potential for widespread application in various optoelectronics.
{"title":"Ligand compensation enabling efficient and stable exciton recombination in perovskite QDs for high-performance QLEDs","authors":"Jindi Wang, Mingyang Li, Wenxuan Fan, Leimeng Xu, Jisong Yao, Shalong Wang, Jizhong Song","doi":"10.1063/5.0191238","DOIUrl":"https://doi.org/10.1063/5.0191238","url":null,"abstract":"Perovskite quantum dot-based light-emitting diodes (QLEDs) have been considered as a promising luminescent technology due to high color purity and wide color gamut. However, the realization of high-performance QLED is still hindered by near-perfect quantum dots (QDs) with efficient and stable exciton recombination behavior. Here, we proposed a ligand compensation (LC) strategy to optimize the QDs by introducing a ligand pair of tri-n-octylphosphine (TOP) and CsBr. The ligand pair could enhance the clarity and colloidal stability of the QD ink, facilitating the fabrication of highly smooth films. On one hand, TOP engages in interactions with Pb and effectively passivates the surface uncoordinated Pb2+. On the other hand, the supplement of CsBr provides a Br-rich environment to reduce Br vacancies (VBr). Through LC, QD films possess a high photoluminescence quantum efficiency of 82% and a shallow hole level, which enables efficient exciton recombination. In addition, the LC makes QD films exhibit stable exciton combination behavior and electrical transport characteristics. Resultantly, the LC-optimized QLEDs show a maximum external quantum efficiency (EQE) of 24.7% and an operational lifetime T50 of 182 h at an initial luminance of 100 cd m−2, which is obviously higher than that of the control device (EQE of 15.8%, T50 of 11 h). The proposed LC strategy for optimizing perovskite QDs presents a novel concept for achieving high-performance QLEDs and holds great potential for widespread application in various optoelectronics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"15 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141597593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lipeng Xia, Yuheng Liu, Ray T. Chen, Binbin Weng, Yi Zou
The global trends of urbanization and industrialization have given rise to critical environmental and air pollution issues that often receive insufficient attention. Among the myriad pollution sources, volatile organic compounds (VOCs) stand out as a primary cluster, posing a significant threat to human society. Addressing VOCs emissions requires an effective mitigation action plan, placing technological development, especially in detection, at the forefront. Photonic sensing technologies rooted in the infrared (IR) light and matter interaction mechanism offer nondestructive, fast-response, sensitive, and selective chemical measurements, making them a promising solution for VOC detection. Recent strides in nanofabrication processes have facilitated the development of miniaturized photonic devices and thus sparked growing interest in the creation of low-cost, highly selective, sensitive, and fast-response IR optical sensors for VOC detection. This review work thus serves a timely need to provide the community a comprehensive understanding of the state of the art in this field and illuminate the path forward in addressing the pressing issue of VOC pollution.
{"title":"Advancements in miniaturized infrared spectroscopic-based volatile organic compound sensors: A systematic review","authors":"Lipeng Xia, Yuheng Liu, Ray T. Chen, Binbin Weng, Yi Zou","doi":"10.1063/5.0197236","DOIUrl":"https://doi.org/10.1063/5.0197236","url":null,"abstract":"The global trends of urbanization and industrialization have given rise to critical environmental and air pollution issues that often receive insufficient attention. Among the myriad pollution sources, volatile organic compounds (VOCs) stand out as a primary cluster, posing a significant threat to human society. Addressing VOCs emissions requires an effective mitigation action plan, placing technological development, especially in detection, at the forefront. Photonic sensing technologies rooted in the infrared (IR) light and matter interaction mechanism offer nondestructive, fast-response, sensitive, and selective chemical measurements, making them a promising solution for VOC detection. Recent strides in nanofabrication processes have facilitated the development of miniaturized photonic devices and thus sparked growing interest in the creation of low-cost, highly selective, sensitive, and fast-response IR optical sensors for VOC detection. This review work thus serves a timely need to provide the community a comprehensive understanding of the state of the art in this field and illuminate the path forward in addressing the pressing issue of VOC pollution.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"3 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141584219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Haozong Zhong, Lujun Huang, Shuangli Li, Chaobiao Zhou, Shaojun You, Lin Li, Ya Cheng, Andrey E. Miroshnichenko
Structural symmetry plays a pivotal role in the emergence of symmetry-protected bound states in the continuum (BICs), often observed at the Γ-point within the first Brillouin zone. However, structural symmetry is not an absolute requirement for the formation of BICs at the Γ-point. In this work, we demonstrate that all-dielectric metasurfaces and photonic crystal slabs, made of dimer nanostructures with different sizes and shapes, can sustain BICs at the Γ-point. We show that the nature of these BICs is well preserved, irrespective of the size mismatch/difference, as long as the center-to-center distance between two nanodisks is equal to half of the lattice constants of a superunit cell. The BICs are transformed into quasi-BICs (QBICs) with finite quality (Q) factors by varying the interspacing of dimer nanodisks. Multipole decomposition indicates that this BIC is primarily governed by a toroidal dipole, with a secondary contribution from a magnetic dipole and magnetic quadrupole. Furthermore, we establish that such a BIC is robust against the shape of nanodisks. Notably, we observe that the Q-factor of QBICs for right nanodisks displaced along the y-axis is three orders of magnitude higher than those along the x-axis, suggesting an effective approach to realizing ultrahigh-Q resonances. Finally, we present an experimental demonstration of such a BIC by fabricating silicon dimer metasurfaces and photonic crystal slabs with dimer nanoholes. The trend of measured Q-factors and resonant wavelengths of QBICs shows good agreement with theoretical predictions. The maximum Q-factor is up to 22 633. These results not only advance our understanding of BICs within compound metasurfaces but also hold great promise in enhancing light–matter interactions.
{"title":"Toroidal dipole bound states in the continuum in asymmetric dimer metasurfaces","authors":"Haozong Zhong, Lujun Huang, Shuangli Li, Chaobiao Zhou, Shaojun You, Lin Li, Ya Cheng, Andrey E. Miroshnichenko","doi":"10.1063/5.0200778","DOIUrl":"https://doi.org/10.1063/5.0200778","url":null,"abstract":"Structural symmetry plays a pivotal role in the emergence of symmetry-protected bound states in the continuum (BICs), often observed at the Γ-point within the first Brillouin zone. However, structural symmetry is not an absolute requirement for the formation of BICs at the Γ-point. In this work, we demonstrate that all-dielectric metasurfaces and photonic crystal slabs, made of dimer nanostructures with different sizes and shapes, can sustain BICs at the Γ-point. We show that the nature of these BICs is well preserved, irrespective of the size mismatch/difference, as long as the center-to-center distance between two nanodisks is equal to half of the lattice constants of a superunit cell. The BICs are transformed into quasi-BICs (QBICs) with finite quality (Q) factors by varying the interspacing of dimer nanodisks. Multipole decomposition indicates that this BIC is primarily governed by a toroidal dipole, with a secondary contribution from a magnetic dipole and magnetic quadrupole. Furthermore, we establish that such a BIC is robust against the shape of nanodisks. Notably, we observe that the Q-factor of QBICs for right nanodisks displaced along the y-axis is three orders of magnitude higher than those along the x-axis, suggesting an effective approach to realizing ultrahigh-Q resonances. Finally, we present an experimental demonstration of such a BIC by fabricating silicon dimer metasurfaces and photonic crystal slabs with dimer nanoholes. The trend of measured Q-factors and resonant wavelengths of QBICs shows good agreement with theoretical predictions. The maximum Q-factor is up to 22 633. These results not only advance our understanding of BICs within compound metasurfaces but also hold great promise in enhancing light–matter interactions.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"20 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141584221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aviv Karnieli, Nicholas Rivera, Valerio Di Giulio, Ady Arie, F. Javier García de Abajo, Ido Kaminer
Spontaneous light emission is central to a vast range of physical systems and is a founding pillar for the theory of light–matter interactions. In the presence of complex photonic media, the description of spontaneous light emission usually requires advanced theoretical quantum optics tools such as macroscopic quantum electrodynamics, involving quantized electromagnetic fields. Although rigorous and comprehensive, the complexity of such models can obscure the intuitive understanding of many quantum-optical phenomena. Here, we review a method for calculating spontaneous emission and other quantum-optical processes without making explicit use of quantized electromagnetic fields. Instead, we introduce the concept of transition currents, comprising charges in matter that undergo transitions between initial and final quantum states. We show how predictions that usually demand advanced methods in quantum electrodynamics or quantum optics can be reproduced by feeding these transition currents as sources to the classical Maxwell equations. One then obtains the relevant quantum observables from the resulting classical field amplitudes, without washing out quantum optical effects. We show that this procedure allows for a straightforward description of quantum phenomena, even when going beyond the dipole approximation and single emitters. As illustrative examples, we calculate emission patterns and Purcell-enhanced emission rates in both bound-electron and free-electron systems. For the latter, we derive cathodoluminescence emission and energy-loss probabilities of free electrons interacting with nanostructured samples. In addition, we calculate quantum-beat phenomena in bound-electron systems and wave function-dependent optical coherence in free-electron systems. Remarkably, the transition-current formalism captures more complex phenomena, such as many-body interference effects and super-radiance of both bound- and free-electron systems, second-order processes such as two-photon emission, and quantum recoil corrections to free-electron radiation. We review a variety of light–matter interactions in fields ranging from electron microscopy to nanophotonics and quantum optics, for which the transition-current theoretical formalism facilitates practical simulations and a deeper understanding of novel applications.
{"title":"Modeling quantum optical phenomena using transition currents","authors":"Aviv Karnieli, Nicholas Rivera, Valerio Di Giulio, Ady Arie, F. Javier García de Abajo, Ido Kaminer","doi":"10.1063/5.0156353","DOIUrl":"https://doi.org/10.1063/5.0156353","url":null,"abstract":"Spontaneous light emission is central to a vast range of physical systems and is a founding pillar for the theory of light–matter interactions. In the presence of complex photonic media, the description of spontaneous light emission usually requires advanced theoretical quantum optics tools such as macroscopic quantum electrodynamics, involving quantized electromagnetic fields. Although rigorous and comprehensive, the complexity of such models can obscure the intuitive understanding of many quantum-optical phenomena. Here, we review a method for calculating spontaneous emission and other quantum-optical processes without making explicit use of quantized electromagnetic fields. Instead, we introduce the concept of transition currents, comprising charges in matter that undergo transitions between initial and final quantum states. We show how predictions that usually demand advanced methods in quantum electrodynamics or quantum optics can be reproduced by feeding these transition currents as sources to the classical Maxwell equations. One then obtains the relevant quantum observables from the resulting classical field amplitudes, without washing out quantum optical effects. We show that this procedure allows for a straightforward description of quantum phenomena, even when going beyond the dipole approximation and single emitters. As illustrative examples, we calculate emission patterns and Purcell-enhanced emission rates in both bound-electron and free-electron systems. For the latter, we derive cathodoluminescence emission and energy-loss probabilities of free electrons interacting with nanostructured samples. In addition, we calculate quantum-beat phenomena in bound-electron systems and wave function-dependent optical coherence in free-electron systems. Remarkably, the transition-current formalism captures more complex phenomena, such as many-body interference effects and super-radiance of both bound- and free-electron systems, second-order processes such as two-photon emission, and quantum recoil corrections to free-electron radiation. We review a variety of light–matter interactions in fields ranging from electron microscopy to nanophotonics and quantum optics, for which the transition-current theoretical formalism facilitates practical simulations and a deeper understanding of novel applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"13 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141566233","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Liuxiang Huo, Lin Wang, Shubing Li, Xionghu Xu, Liangqing Zhu, Yawei Li, Liyan Shang, Kai Jiang, Junhao Chu, Zhigao Hu
Here, we have developed a more temperature-tolerant emitter with a gradient emittance, which can enable adaptation to changing environmental conditions. Such a thermal emitter is mainly constructed by multilayered films composed of nitrogen (N)-doped Ge2Sb2Te5 (N-GST) and an underlying metal film. The proposed device not only possesses special wavelength selectivity in the middle infrared range but can also dynamically adjust average emissivity (from 0.13 to 0.83) through the degree of crystallization. Besides, N doping can elevate the phase transition temperature of GST and enhance its thermal resistance, which renders it particularly well-suited for applications in higher temperature environments than pure GST. This emitter also shows strong adhesion capability and high flexibility against bending, enabling more practical and widespread situations. By using a multi-layer structure, we combined the more temperature-tolerant and dynamically modulating N-GST emitter with an optical thin film, successfully achieving dual camouflage for both infrared and visible light. The element doping technology and multi-layer stacking approach presented in this research will provide valuable insight for the development of dynamic emissive materials in multi-spectral camouflage scenarios.
{"title":"Highly flexible and temperature-tolerant phase change devices for dual-band camouflage","authors":"Liuxiang Huo, Lin Wang, Shubing Li, Xionghu Xu, Liangqing Zhu, Yawei Li, Liyan Shang, Kai Jiang, Junhao Chu, Zhigao Hu","doi":"10.1063/5.0199932","DOIUrl":"https://doi.org/10.1063/5.0199932","url":null,"abstract":"Here, we have developed a more temperature-tolerant emitter with a gradient emittance, which can enable adaptation to changing environmental conditions. Such a thermal emitter is mainly constructed by multilayered films composed of nitrogen (N)-doped Ge2Sb2Te5 (N-GST) and an underlying metal film. The proposed device not only possesses special wavelength selectivity in the middle infrared range but can also dynamically adjust average emissivity (from 0.13 to 0.83) through the degree of crystallization. Besides, N doping can elevate the phase transition temperature of GST and enhance its thermal resistance, which renders it particularly well-suited for applications in higher temperature environments than pure GST. This emitter also shows strong adhesion capability and high flexibility against bending, enabling more practical and widespread situations. By using a multi-layer structure, we combined the more temperature-tolerant and dynamically modulating N-GST emitter with an optical thin film, successfully achieving dual camouflage for both infrared and visible light. The element doping technology and multi-layer stacking approach presented in this research will provide valuable insight for the development of dynamic emissive materials in multi-spectral camouflage scenarios.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"20 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141566234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bo Jing, Shihai Wei, Longyao Zhang, Dianli Zhou, Yuxing He, Xihua Zou, Wei Pan, Hai-Zhi Song, Lianshan Yan
Quantum memory, which maps photonic quantum information into a stationary medium and retrieves it at a chosen time, plays a vital role in the advancement of quantum information science. In particular, the scalability of a quantum memory is a central challenge for quantum network that can be overcome by using integrated devices. Quantum memory with an integrated device is highly appealing since it not only expands the number of memories to increase data rates, but also offers seamless compatibility with other on-chip devices and existing fiber network, enabling scalable and convenient applications. Over the past few decades, substantial efforts have been dedicated to achieving integrated quantum memory using rare earth ions doped solid-state materials, color centers, and atomic gases. These physical platforms are the primary candidates for such devices, where remarkable advantages have been demonstrated in achieving high-performance integrated quantum memory, paving the way for efficiently establishing robust and scalable quantum network with integrated quantum devices. In this paper, we aim to provide a comprehensive review of integrated quantum memory, encompassing its background and significance, advancement with bulky memory system, fabrication of integrated device, and its memory function considering various performance metrics. Additionally, we will address the challenges associated with integrated quantum memory and explore its potential applications. By analyzing the current state of the field, this review will make a valuable contribution by offering illustrative examples and providing helpful guidance for future achievements in practical integrated quantum memory.
{"title":"Approaching scalable quantum memory with integrated atomic devices","authors":"Bo Jing, Shihai Wei, Longyao Zhang, Dianli Zhou, Yuxing He, Xihua Zou, Wei Pan, Hai-Zhi Song, Lianshan Yan","doi":"10.1063/5.0179539","DOIUrl":"https://doi.org/10.1063/5.0179539","url":null,"abstract":"Quantum memory, which maps photonic quantum information into a stationary medium and retrieves it at a chosen time, plays a vital role in the advancement of quantum information science. In particular, the scalability of a quantum memory is a central challenge for quantum network that can be overcome by using integrated devices. Quantum memory with an integrated device is highly appealing since it not only expands the number of memories to increase data rates, but also offers seamless compatibility with other on-chip devices and existing fiber network, enabling scalable and convenient applications. Over the past few decades, substantial efforts have been dedicated to achieving integrated quantum memory using rare earth ions doped solid-state materials, color centers, and atomic gases. These physical platforms are the primary candidates for such devices, where remarkable advantages have been demonstrated in achieving high-performance integrated quantum memory, paving the way for efficiently establishing robust and scalable quantum network with integrated quantum devices. In this paper, we aim to provide a comprehensive review of integrated quantum memory, encompassing its background and significance, advancement with bulky memory system, fabrication of integrated device, and its memory function considering various performance metrics. Additionally, we will address the challenges associated with integrated quantum memory and explore its potential applications. By analyzing the current state of the field, this review will make a valuable contribution by offering illustrative examples and providing helpful guidance for future achievements in practical integrated quantum memory.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"27 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cheng Zhang, Chenyu Wang, Chao Li, Tiansheng Zhang, Yucheng Jiang, Xinli Cheng, Kuaibing Wang, Chunlan Ma, Yang Li
Recently, an emerging class of hydrogen-bonded organic frameworks (HOFs) has become an appealing member of organic material family, attributed to their layered self-assembly structures, high-crystalline, and environmentally friendly characteristics, which have rapidly propelled their development in the field of electronic devices. In this context, we focus on the latest category of topological HOFs, with particular attention given to cutting-edge experimental demonstrations, exceptional electrical performances, and promising applications. First, a concise concept and fundamental mechanism of HOFs are provided, elucidating the potential correlation between structural designs and material properties. Subsequently, a comprehensive summary is presented on the preparation and synthesis methods, such as hydrothermal techniques, epitaxial growth, electro-deposition, among others. Notably, the latest advancements in HOFs-based electronics are thoroughly introduced and discussed, along with their applications in sensors, memristors, artificial synapses, neuromorphic computing, and human perception systems. Finally, the future challenges and prospects of topological HOFs are elaborated upon with the aim of providing valuable guidance for high-performance HOF-based electronics.
{"title":"Topological hydrogen-bonded organic frameworks (HOFs) and their electronic applications in sensor, memristor, and neuromorphic computing","authors":"Cheng Zhang, Chenyu Wang, Chao Li, Tiansheng Zhang, Yucheng Jiang, Xinli Cheng, Kuaibing Wang, Chunlan Ma, Yang Li","doi":"10.1063/5.0211730","DOIUrl":"https://doi.org/10.1063/5.0211730","url":null,"abstract":"Recently, an emerging class of hydrogen-bonded organic frameworks (HOFs) has become an appealing member of organic material family, attributed to their layered self-assembly structures, high-crystalline, and environmentally friendly characteristics, which have rapidly propelled their development in the field of electronic devices. In this context, we focus on the latest category of topological HOFs, with particular attention given to cutting-edge experimental demonstrations, exceptional electrical performances, and promising applications. First, a concise concept and fundamental mechanism of HOFs are provided, elucidating the potential correlation between structural designs and material properties. Subsequently, a comprehensive summary is presented on the preparation and synthesis methods, such as hydrothermal techniques, epitaxial growth, electro-deposition, among others. Notably, the latest advancements in HOFs-based electronics are thoroughly introduced and discussed, along with their applications in sensors, memristors, artificial synapses, neuromorphic computing, and human perception systems. Finally, the future challenges and prospects of topological HOFs are elaborated upon with the aim of providing valuable guidance for high-performance HOF-based electronics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"21 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141561465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Saqeeb Adnan, Amey Khanolkar, Shuxiang Zhou, David H. Hurley, Marat Khafizov
The ultrafast dynamics of the antiferrodistortive phase transition in perovskite SrTiO3 is monitored via time-domain Brillouin scattering. Using femtosecond optical pulses, we initiate a thermally driven tetragonal-to-cubic structural transformation and detect the crystal phase through changes in the frequency of Brillouin oscillations (BO) induced by propagating acoustic phonons. Coupling the measured BO frequency with a spatiotemporal heat diffusion model, we demonstrate that, for a sample kept in the tetragonal phase, deposition of sufficient thermal energy induces a rapid transformation of the heat-affected region to the cubic phase. The initial phase change is followed by a slower reverse cubic-to-tetragonal phase transformation occurring on a timescale of hundreds of picoseconds. We attribute this ultrafast phase transformation in the perovskite to a structural resemblance between atomic displacements of the R-point soft optic mode of the cubic phase and the tetragonal phase, both characterized by anti-phase rotation of oxygen octahedra. The structural relaxation time exhibits a strong temperature dependence consistent with the prediction of the equation of motion describing collective oxygen octahedra rotation based on the energy landscape of the phenomenological Landau theory of phase transitions. Evidence of such a fast structural transition in perovskites can open up new avenues in information processing and energy storage sectors.
我们通过时域布里渊散射监测了包晶 SrTiO3 中反铁锂相变的超快动态。利用飞秒光脉冲，我们启动了由热驱动的四方到立方的结构转变，并通过传播声子诱发的布里渊振荡（BO）频率变化来探测晶体相位。将测量到的布里渊振荡频率与时空热扩散模型相结合，我们证明，对于保持四方相的样品，足够的热能沉积会诱导热影响区域迅速转变为立方相。初始相变之后，立方相向四方相的反向相变速度较慢，其时间尺度为数百皮秒。我们将包晶石中的这种超快相变归因于立方相和四方相的 R 点软光学模式原子位移之间的结构相似性，两者都以氧八面体的反相旋转为特征。结构弛豫时间表现出很强的温度依赖性，这与描述氧八面体集体旋转的运动方程根据相变现象学朗道理论的能量景观预测的结果一致。有证据表明过氧化物中存在如此快速的结构转变，这将为信息处理和能量存储领域开辟新的途径。
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Entanglement-enhanced quantum metrology explores the utilization of quantum entanglement to enhance measurement precision. When particles in a probe are prepared into a suitable quantum entangled state, they may collectively accumulate information about the physical quantity to be measured, leading to an improvement in measurement precision beyond the standard quantum limit and approaching the Heisenberg limit. The rapid advancement of techniques for quantum manipulation and detection has enabled the generation, manipulation, and detection of multi-particle entangled states in synthetic quantum systems such as cold atoms and trapped ions. This article aims to review and illustrate the fundamental principles and experimental progresses that demonstrate multi-particle entanglement for quantum metrology, as well as discuss the potential applications of entanglement-enhanced quantum sensors.
{"title":"Entanglement-enhanced quantum metrology: From standard quantum limit to Heisenberg limit","authors":"Jiahao Huang, Min Zhuang, Chaohong Lee","doi":"10.1063/5.0204102","DOIUrl":"https://doi.org/10.1063/5.0204102","url":null,"abstract":"Entanglement-enhanced quantum metrology explores the utilization of quantum entanglement to enhance measurement precision. When particles in a probe are prepared into a suitable quantum entangled state, they may collectively accumulate information about the physical quantity to be measured, leading to an improvement in measurement precision beyond the standard quantum limit and approaching the Heisenberg limit. The rapid advancement of techniques for quantum manipulation and detection has enabled the generation, manipulation, and detection of multi-particle entangled states in synthetic quantum systems such as cold atoms and trapped ions. This article aims to review and illustrate the fundamental principles and experimental progresses that demonstrate multi-particle entanglement for quantum metrology, as well as discuss the potential applications of entanglement-enhanced quantum sensors.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"17 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141495854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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