Runqiu Wang, Guowei Han, Ying He, Shunda Qiao, Yufei Ma
In this paper, the performance of two self-designed lithium niobate tuning forks (LiNTF), round-head and tapered LiNTFs, was systematically explored in lithium niobate-enhanced photoacoustic spectroscopy (LiNPAS) and light-induced thermoelastic spectroscopy (LITES) sensors. Finite element analysis results revealed that the stress and surface charge density of the LiNTFs were higher than those of the standard quartz tuning fork (QTF), owing to the high piezoelectric coefficient and electromechanical coupling coefficient of the LiNbO3. The sensing performance of the two LiNTFs was experimentally evaluated, and acetylene (C2H2) was used as the test gas for performance validation. In the C2H2–LiNPAS system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were 3.47 times and 4.29 times higher than those of the standard QTF, respectively. When the average time reached 1000 s, the minimum detection limits (MDLs) of the sensor based on round-head LiNTF and the tapered LiNTF were 723 and 450 ppb, respectively. In the C2H2–LITES system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were found to be 3.79 times and 5.13 times higher than that of the standard QTF. The MDLs of the LITES sensor based on the round-head LiNTF and the tapered LiNTF were determined to be 101 and 52 ppb, respectively.
{"title":"Lithium niobate tuning fork-enhanced photoacoustic spectroscopy and light-induced thermoelastic spectroscopy","authors":"Runqiu Wang, Guowei Han, Ying He, Shunda Qiao, Yufei Ma","doi":"10.1063/5.0277336","DOIUrl":"https://doi.org/10.1063/5.0277336","url":null,"abstract":"In this paper, the performance of two self-designed lithium niobate tuning forks (LiNTF), round-head and tapered LiNTFs, was systematically explored in lithium niobate-enhanced photoacoustic spectroscopy (LiNPAS) and light-induced thermoelastic spectroscopy (LITES) sensors. Finite element analysis results revealed that the stress and surface charge density of the LiNTFs were higher than those of the standard quartz tuning fork (QTF), owing to the high piezoelectric coefficient and electromechanical coupling coefficient of the LiNbO3. The sensing performance of the two LiNTFs was experimentally evaluated, and acetylene (C2H2) was used as the test gas for performance validation. In the C2H2–LiNPAS system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were 3.47 times and 4.29 times higher than those of the standard QTF, respectively. When the average time reached 1000 s, the minimum detection limits (MDLs) of the sensor based on round-head LiNTF and the tapered LiNTF were 723 and 450 ppb, respectively. In the C2H2–LITES system, the 2f signal peak values of the round-head LiNTF and the tapered LiNTF were found to be 3.79 times and 5.13 times higher than that of the standard QTF. The MDLs of the LITES sensor based on the round-head LiNTF and the tapered LiNTF were determined to be 101 and 52 ppb, respectively.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"55 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145311620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Low power consumption and fast response enabled by voltage control are core advantages of field-effect transistors. Similarly, in magnetoelectric random access memory (MeRAM), voltage-controlled magnetic anisotropy (VCMA) offers comparable advantages in assisting or directly inducing magnetization switching. Enhancing the VCMA coefficient is essential for fully realizing this functionality. In this work, first-principles calculations reveal that the Pt/Fe/MgO heterostructure exhibits a significant VCMA coefficient (β = −4394 fJ/V·m), which is mainly contributed by the Pt layer. It has been demonstrated that the large VCMA coefficient originates from four indispensable determinants associated with the Pt layer: (1) the strong spin–orbit coupling constant, (2) the high induced spin polarization, (3) electron accumulation/depletion on the Pt layer, and (4) the presence of Pt dz2 orbital states near the Fermi level. In consideration of practical application scenarios, Pt/Fe/MgO was further capped with an Au electrode layer and a dielectric BaTiO3 layer. However, the calculated results reveal a significant reduction in the VCMA coefficient for both structures. In contrast, introducing a 2D dielectric material, LaOBr, as a gate layer atop Pt/Fe/MgO, a comparably large VCMA coefficient (β = −4373 fJ/V·m) is obtained. This is attributed to the van der Waals nature of the LaOBr/Pt interface, which allows the Pt layer to meet the four determinants mentioned above. The insights into the factors governing the VCMA coefficient and the design of the LaOBr/Pt/Fe/MgO heterostructure provide valuable guidance for the development of next-generation, high-performance MeRAM devices with large VCMA.
{"title":"Voltage-controlled magnetic anisotropy in Pt/Fe/MgO and 2D dielectric LaOBr-capped Pt/Fe/MgO heterostructures","authors":"Xinzhuo Zhang, Shiming Yan, Wen Qiao, Ru Bai, Tiejun Zhou","doi":"10.1063/5.0281436","DOIUrl":"https://doi.org/10.1063/5.0281436","url":null,"abstract":"Low power consumption and fast response enabled by voltage control are core advantages of field-effect transistors. Similarly, in magnetoelectric random access memory (MeRAM), voltage-controlled magnetic anisotropy (VCMA) offers comparable advantages in assisting or directly inducing magnetization switching. Enhancing the VCMA coefficient is essential for fully realizing this functionality. In this work, first-principles calculations reveal that the Pt/Fe/MgO heterostructure exhibits a significant VCMA coefficient (β = −4394 fJ/V·m), which is mainly contributed by the Pt layer. It has been demonstrated that the large VCMA coefficient originates from four indispensable determinants associated with the Pt layer: (1) the strong spin–orbit coupling constant, (2) the high induced spin polarization, (3) electron accumulation/depletion on the Pt layer, and (4) the presence of Pt dz2 orbital states near the Fermi level. In consideration of practical application scenarios, Pt/Fe/MgO was further capped with an Au electrode layer and a dielectric BaTiO3 layer. However, the calculated results reveal a significant reduction in the VCMA coefficient for both structures. In contrast, introducing a 2D dielectric material, LaOBr, as a gate layer atop Pt/Fe/MgO, a comparably large VCMA coefficient (β = −4373 fJ/V·m) is obtained. This is attributed to the van der Waals nature of the LaOBr/Pt interface, which allows the Pt layer to meet the four determinants mentioned above. The insights into the factors governing the VCMA coefficient and the design of the LaOBr/Pt/Fe/MgO heterostructure provide valuable guidance for the development of next-generation, high-performance MeRAM devices with large VCMA.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"2017 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145295213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zheng Wang, Kangli Xu, Jialin Meng, Bo Feng, Tianyu Wang
Driven by the rapid advancement of the Internet of Things and artificial intelligence, computational power demands have experienced an exponential surge, thereby accentuating the inherent limitations of the conventional von Neumann architecture. Neuromorphic computing memristors are emerging as a promising solution to overcome this bottleneck. Among various material-based memristors, carbon-based memristors (CBMs) are particularly attractive due to their biocompatibility, flexibility, and stability, which make them well suited for next-generation neuromorphic applications. This review summarizes the recent advancements in CBMs and proposes potential application scenarios in neuromorphic computing. Representative CBMs and preparation methods of carbon-based materials in different dimensions (0D, 1D, 2D, and 3D) are presented, followed by structural, storage, and synaptic plasticity testing and switching mechanisms. The neural network architecture built by CBMs is summarized for image processing, wearable electronics, and three-dimensional integration. Finally, the future challenges and application prospects of CBMs are reviewed and summarized.
{"title":"Carbon-based memristors for neuromorphic computing","authors":"Zheng Wang, Kangli Xu, Jialin Meng, Bo Feng, Tianyu Wang","doi":"10.1063/5.0260582","DOIUrl":"https://doi.org/10.1063/5.0260582","url":null,"abstract":"Driven by the rapid advancement of the Internet of Things and artificial intelligence, computational power demands have experienced an exponential surge, thereby accentuating the inherent limitations of the conventional von Neumann architecture. Neuromorphic computing memristors are emerging as a promising solution to overcome this bottleneck. Among various material-based memristors, carbon-based memristors (CBMs) are particularly attractive due to their biocompatibility, flexibility, and stability, which make them well suited for next-generation neuromorphic applications. This review summarizes the recent advancements in CBMs and proposes potential application scenarios in neuromorphic computing. Representative CBMs and preparation methods of carbon-based materials in different dimensions (0D, 1D, 2D, and 3D) are presented, followed by structural, storage, and synaptic plasticity testing and switching mechanisms. The neural network architecture built by CBMs is summarized for image processing, wearable electronics, and three-dimensional integration. Finally, the future challenges and application prospects of CBMs are reviewed and summarized.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"37 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145282727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Despite their zero net magnetization, antiferromagnets and compensated ferrimagnets have great potential as electrically and optically activated spin sources. The absence of stray fields means that such spin sources can be placed in close proximity to other magnetic elements without disturbing their state. Recent advances have shown that antiferromagnets and compensated ferrimagnets can emit spin current pulses with timescales down to the picosecond range and in the presence of small or zero external magnetic fields. The spin currents emitted by antiferromagnets have been used in actual devices to induce the field-free switching of nearby ferromagnets. Here, we review the different ways of generating a spin current from a magnetically compensated material. We describe the theoretical models for spin generation and the experimental techniques adopted for measuring the spin currents in different time regimes.
{"title":"Spin emission from antiferromagnets and compensated ferrimagnets","authors":"C. Ciccarelli, G. Nava Antonio, J. Barker","doi":"10.1063/5.0273489","DOIUrl":"https://doi.org/10.1063/5.0273489","url":null,"abstract":"Despite their zero net magnetization, antiferromagnets and compensated ferrimagnets have great potential as electrically and optically activated spin sources. The absence of stray fields means that such spin sources can be placed in close proximity to other magnetic elements without disturbing their state. Recent advances have shown that antiferromagnets and compensated ferrimagnets can emit spin current pulses with timescales down to the picosecond range and in the presence of small or zero external magnetic fields. The spin currents emitted by antiferromagnets have been used in actual devices to induce the field-free switching of nearby ferromagnets. Here, we review the different ways of generating a spin current from a magnetically compensated material. We describe the theoretical models for spin generation and the experimental techniques adopted for measuring the spin currents in different time regimes.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"35 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145260723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
E. M. Anderson, C. R. Allemang, A. J. Leenheer, S. W. Schmucker, J. A. Ivie, D. M. Campbell, W. Lepkowski, X. Gao, P. Lu, C. Arose, T.-M. Lu, C. Halsey, T. D. England, D. R. Ward, D. A. Scrymgeour, S. Misra
Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.
{"title":"Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication","authors":"E. M. Anderson, C. R. Allemang, A. J. Leenheer, S. W. Schmucker, J. A. Ivie, D. M. Campbell, W. Lepkowski, X. Gao, P. Lu, C. Arose, T.-M. Lu, C. Halsey, T. D. England, D. R. Ward, D. A. Scrymgeour, S. Misra","doi":"10.1063/5.0278639","DOIUrl":"https://doi.org/10.1063/5.0278639","url":null,"abstract":"Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"64 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Ashiqur Rahman Laskar, Lennaert Wouters, Pieter Lagrain, Jill Serron, Nemanja Peric, Andrea Pondini, Pierre Eyben, Thomas Hantschel, Umberto Celano
Scanning spreading resistance microscopy (SSRM) has recently celebrated 30 years of existence when counting from the original patent of 1994. In this time, the technique has experienced an incredible journey with substantial evolutions that transformed SSRM from a small-scale experiment into a staple for chip manufacturing laboratories for physical analysis of materials, failure analysis, and process development of integrated circuits. As the nanoelectronics industry is ready for a new inflection point, with the introduction of nanosheet field-effect transistor to replace FinFETs and cell track scaling architectures such as the complementary field-effect transistors, SSRM is once again at a turning point. This review aims to highlight the state-of-the-art while discussing the emerging challenges introduced by the ever-increasing complexity in complementary metal–oxide–semiconductor (CMOS) manufacturing. We start by illustrating the unique capability of the SSRM technique, its origin, and its evolution. Next, we continue by showing the considerable research effort that enabled SSRM to transition to a tomographic sensing method in support of FinFET transistors. Here, the high aspect ratio fin geometry and the complex contacts technology have imposed important modifications to the original method. Later, we elaborate on some of the key challenges introduced by the upcoming device transition from three-sided channel FinFETs into nanosheet FETs, i.e., offering a four-sided electrostatic control of the channel. Finally, we present the use of machine learning for automation in carrier calibration with increased accuracy. We close by introducing some of the concepts that we consider promising for further extension of SSRM to obtain sub-nm structural information and doping profiles in the area of advanced FinFETs and nanosheet FET technologies, including (a) correlative analysis flow, (b) liquid-assisted probing, and (c) top–down and bottom–up multi-probe sensing schemes to merge low- and high-pressure SSRM scans.
{"title":"The enduring legacy of scanning spreading resistance microscopy: Overview, advancements, and future directions","authors":"Md Ashiqur Rahman Laskar, Lennaert Wouters, Pieter Lagrain, Jill Serron, Nemanja Peric, Andrea Pondini, Pierre Eyben, Thomas Hantschel, Umberto Celano","doi":"10.1063/5.0280969","DOIUrl":"https://doi.org/10.1063/5.0280969","url":null,"abstract":"Scanning spreading resistance microscopy (SSRM) has recently celebrated 30 years of existence when counting from the original patent of 1994. In this time, the technique has experienced an incredible journey with substantial evolutions that transformed SSRM from a small-scale experiment into a staple for chip manufacturing laboratories for physical analysis of materials, failure analysis, and process development of integrated circuits. As the nanoelectronics industry is ready for a new inflection point, with the introduction of nanosheet field-effect transistor to replace FinFETs and cell track scaling architectures such as the complementary field-effect transistors, SSRM is once again at a turning point. This review aims to highlight the state-of-the-art while discussing the emerging challenges introduced by the ever-increasing complexity in complementary metal–oxide–semiconductor (CMOS) manufacturing. We start by illustrating the unique capability of the SSRM technique, its origin, and its evolution. Next, we continue by showing the considerable research effort that enabled SSRM to transition to a tomographic sensing method in support of FinFET transistors. Here, the high aspect ratio fin geometry and the complex contacts technology have imposed important modifications to the original method. Later, we elaborate on some of the key challenges introduced by the upcoming device transition from three-sided channel FinFETs into nanosheet FETs, i.e., offering a four-sided electrostatic control of the channel. Finally, we present the use of machine learning for automation in carrier calibration with increased accuracy. We close by introducing some of the concepts that we consider promising for further extension of SSRM to obtain sub-nm structural information and doping profiles in the area of advanced FinFETs and nanosheet FET technologies, including (a) correlative analysis flow, (b) liquid-assisted probing, and (c) top–down and bottom–up multi-probe sensing schemes to merge low- and high-pressure SSRM scans.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"39 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145247499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xinyi Li, Shi-Hai Wei, Tianyi Chen, Mingxuan Chen, Jianing Zhou, Xueying Zhang, Si Shen, Hui Cao, Bo Jing, Guangwei Deng, Hai-Zhi Song
Optical microscopy constitutes an essential cornerstone in the life sciences, facilitating detailed investigations into the structural and dynamic complexities of biological systems. Nonetheless, classical optical microscopy encounters significant challenges in probing the intricate complexities of cellular and molecular systems, particularly due to the diffraction limit of light and limitations posed by detection noise. Although significant advances in optical microscopy have realized super-resolution, high signal-to-noise ratios, and high-speed imaging, these methods frequently require high-intensity illumination, potentially inducing photodamage and photobleaching in biological samples. Quantum-twinned photons, characterized by their unique properties of quantum entanglement, quantum correlation, and quantum interference at the single photon level, present transformative solutions to these limitations. Several imaging modalities have been developed that utilize quantum-twinned photons, encompassing quantum correlation imaging, quantum entanglement imaging, and quantum interference imaging. These techniques exhibit quantum-enhanced imaging capabilities that markedly outperform classical methods, with diverse applications in cellular, tissue, and organism imaging. Centered on this theme, here we present a comprehensive review of quantum biological imaging leveraging the three pivotal quantum properties of quantum-twinned photons. The review encompasses the physical principles underlying these methods, recent experimental advancements, and an exploration of future prospects and challenges in the practical implementation of quantum bio-imaging.
{"title":"Bio-imaging with quantum twinned photons","authors":"Xinyi Li, Shi-Hai Wei, Tianyi Chen, Mingxuan Chen, Jianing Zhou, Xueying Zhang, Si Shen, Hui Cao, Bo Jing, Guangwei Deng, Hai-Zhi Song","doi":"10.1063/5.0261444","DOIUrl":"https://doi.org/10.1063/5.0261444","url":null,"abstract":"Optical microscopy constitutes an essential cornerstone in the life sciences, facilitating detailed investigations into the structural and dynamic complexities of biological systems. Nonetheless, classical optical microscopy encounters significant challenges in probing the intricate complexities of cellular and molecular systems, particularly due to the diffraction limit of light and limitations posed by detection noise. Although significant advances in optical microscopy have realized super-resolution, high signal-to-noise ratios, and high-speed imaging, these methods frequently require high-intensity illumination, potentially inducing photodamage and photobleaching in biological samples. Quantum-twinned photons, characterized by their unique properties of quantum entanglement, quantum correlation, and quantum interference at the single photon level, present transformative solutions to these limitations. Several imaging modalities have been developed that utilize quantum-twinned photons, encompassing quantum correlation imaging, quantum entanglement imaging, and quantum interference imaging. These techniques exhibit quantum-enhanced imaging capabilities that markedly outperform classical methods, with diverse applications in cellular, tissue, and organism imaging. Centered on this theme, here we present a comprehensive review of quantum biological imaging leveraging the three pivotal quantum properties of quantum-twinned photons. The review encompasses the physical principles underlying these methods, recent experimental advancements, and an exploration of future prospects and challenges in the practical implementation of quantum bio-imaging.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"112 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145241203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carbon quantum dots (CQDs) are a type of zero-dimensional carbon-based nano-luminescent material with excellent fluorescent properties and have potential applications in many areas. Usually, the fluorescence of CQDs is quenched when they aggregate, limiting further exploration of their application. In recent years, research on CQDs with aggregation-induced emission (AIE) features has shown promise in addressing the issue of poor luminescence efficiency upon aggregation, although the underlying mechanisms are not yet fully understood. Here, inter-dots/molecular excitonic and intra-dots/molecular electron-vibration couplings are employed to potentially explore the mechanism of aggregation-caused quenching and AIE of CQDs. In addition, the CQDs with AIE feature are classified into two categories, the CQDs possessing intrinsic AIE properties (AIE-CQDs) and the exogenous CQDs (endowed-AIE-CQDs). The detailed research progress on both types is also summarized. Furthermore, the documented applications of AIE-CQDs and endowed-AIE-CQDs in biomedical imaging, chemical analysis, and solid-state lighting are summarized based on their enhanced fluorescence and redshifted emission wavelengths upon aggregation.
{"title":"Aggregation-induced emission of carbon quantum dots: Mechanisms and applications","authors":"Haoyi Wu, Yanan Yan, Qian Peng, Youhong Tang","doi":"10.1063/5.0268816","DOIUrl":"https://doi.org/10.1063/5.0268816","url":null,"abstract":"Carbon quantum dots (CQDs) are a type of zero-dimensional carbon-based nano-luminescent material with excellent fluorescent properties and have potential applications in many areas. Usually, the fluorescence of CQDs is quenched when they aggregate, limiting further exploration of their application. In recent years, research on CQDs with aggregation-induced emission (AIE) features has shown promise in addressing the issue of poor luminescence efficiency upon aggregation, although the underlying mechanisms are not yet fully understood. Here, inter-dots/molecular excitonic and intra-dots/molecular electron-vibration couplings are employed to potentially explore the mechanism of aggregation-caused quenching and AIE of CQDs. In addition, the CQDs with AIE feature are classified into two categories, the CQDs possessing intrinsic AIE properties (AIE-CQDs) and the exogenous CQDs (endowed-AIE-CQDs). The detailed research progress on both types is also summarized. Furthermore, the documented applications of AIE-CQDs and endowed-AIE-CQDs in biomedical imaging, chemical analysis, and solid-state lighting are summarized based on their enhanced fluorescence and redshifted emission wavelengths upon aggregation.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"22 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145241212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Radio frequency (RF) filters for communication have been developed rapidly, driven by new communication standards and the dramatic expansion of wide-range applications. Although they are currently playing crucial roles in applications such as mobile communication, space-to-ground communication, and the Internet of Thing, there are significantly stringent and challenging requirements demanded for their rapid and successful applications. Compared with conventionally adopted low-temperature co-fired ceramics, integrated passive device filters, and dielectric filters, acoustic wave filters have been regarded as the competitive choice, mainly attributed to their wide bandwidth, small size, and low insertion loss. This paper reviews the advances and outlines future perspectives of high frequency acoustic wave devices for RF communication, focusing on several critical issues including bandwidth, roll-off, frequency, power-handling, insertion loss, out-of-band rejection, tunability, and size/package. It is focused mainly on the extreme performance breakthroughs of RF acoustic wave filter, e.g., how to achieve acoustic devices with operating frequency above 8 GHz, bandwidth around 1 GHz, and quality factor exceeding 2000. Various principles, strategies, and technologies for achieving the superior performance of super-high frequency RF filters are discussed, e.g., applying advanced materials such as scandium-doped AlN or single crystals of AlN and LiNbO3, creating new topology structures such as hybrid filters, and generating new types of vibration modes of acoustic waves.
{"title":"Advances and future perspectives for super-high frequency, wide-band, and miniaturized acoustic wave filters","authors":"Rui Ding, Danyu Mu, Weipeng Xuan, Feng Gao, Haimeng Wu, Weijun Zhu, Huaping Zhang, Jikui Luo, Yuanjin Zheng, Shurong Dong, Yongqing Fu","doi":"10.1063/5.0277777","DOIUrl":"https://doi.org/10.1063/5.0277777","url":null,"abstract":"Radio frequency (RF) filters for communication have been developed rapidly, driven by new communication standards and the dramatic expansion of wide-range applications. Although they are currently playing crucial roles in applications such as mobile communication, space-to-ground communication, and the Internet of Thing, there are significantly stringent and challenging requirements demanded for their rapid and successful applications. Compared with conventionally adopted low-temperature co-fired ceramics, integrated passive device filters, and dielectric filters, acoustic wave filters have been regarded as the competitive choice, mainly attributed to their wide bandwidth, small size, and low insertion loss. This paper reviews the advances and outlines future perspectives of high frequency acoustic wave devices for RF communication, focusing on several critical issues including bandwidth, roll-off, frequency, power-handling, insertion loss, out-of-band rejection, tunability, and size/package. It is focused mainly on the extreme performance breakthroughs of RF acoustic wave filter, e.g., how to achieve acoustic devices with operating frequency above 8 GHz, bandwidth around 1 GHz, and quality factor exceeding 2000. Various principles, strategies, and technologies for achieving the superior performance of super-high frequency RF filters are discussed, e.g., applying advanced materials such as scandium-doped AlN or single crystals of AlN and LiNbO3, creating new topology structures such as hybrid filters, and generating new types of vibration modes of acoustic waves.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"94 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145209784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Arthur Aquino, Artem Rubinstein, Igor Kudryavtsev, Alexander Yakovlev, Alexey Golovkin
Extracellular vesicles (EVs) are membrane-bound nanoparticles naturally secreted by cells, playing a vital role in intercellular communication and holding significant promise as therapeutic agents. These natural carriers deliver various molecules into cells, including proteins and nucleic acids. There are numerous methods to load and modify EVs, encompassing physical, chemical, and biological approaches. EVs demonstrate the capacity to target specific cells within organs, even requiring blood–tissue transition. The protein corona significantly influences EV availability and cargo delivery, with biomolecules residing both within and conjugated to the EV membrane. Furthermore, embedding EVs within biomaterials such as hydrogels, scaffolds, and nanofibers can enhance their stability, targeting specificity, and therapeutic potential. By addressing cargo loading and cell/tissue-specific targeting, EVs offer a novel therapeutic strategy for various diseases, including cancer, autoimmune disorders, and neurodegenerative diseases. Furthermore, EVs show promise as vaccination tools, delivering messenger RNA and proteins of various pathogens. Advances in EV biology and engineering would provide improved strategies for vesicle targeting, enhanced cargo loading, and safe and effective delivery. The convergence of technological advancements, interdisciplinary collaboration, and an enhanced understanding of EVs promises to revolutionize therapeutic approaches to a wide range of diseases, establishing EV-based treatments as a cornerstone of future medicine.
{"title":"Extracellular vesicles as the drug delivery vehicle for gene-based therapy","authors":"Arthur Aquino, Artem Rubinstein, Igor Kudryavtsev, Alexander Yakovlev, Alexey Golovkin","doi":"10.1063/5.0255519","DOIUrl":"https://doi.org/10.1063/5.0255519","url":null,"abstract":"Extracellular vesicles (EVs) are membrane-bound nanoparticles naturally secreted by cells, playing a vital role in intercellular communication and holding significant promise as therapeutic agents. These natural carriers deliver various molecules into cells, including proteins and nucleic acids. There are numerous methods to load and modify EVs, encompassing physical, chemical, and biological approaches. EVs demonstrate the capacity to target specific cells within organs, even requiring blood–tissue transition. The protein corona significantly influences EV availability and cargo delivery, with biomolecules residing both within and conjugated to the EV membrane. Furthermore, embedding EVs within biomaterials such as hydrogels, scaffolds, and nanofibers can enhance their stability, targeting specificity, and therapeutic potential. By addressing cargo loading and cell/tissue-specific targeting, EVs offer a novel therapeutic strategy for various diseases, including cancer, autoimmune disorders, and neurodegenerative diseases. Furthermore, EVs show promise as vaccination tools, delivering messenger RNA and proteins of various pathogens. Advances in EV biology and engineering would provide improved strategies for vesicle targeting, enhanced cargo loading, and safe and effective delivery. The convergence of technological advancements, interdisciplinary collaboration, and an enhanced understanding of EVs promises to revolutionize therapeutic approaches to a wide range of diseases, establishing EV-based treatments as a cornerstone of future medicine.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"5 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145195022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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