Abhishek Moitra, Abhiroop Bhattacharjee, Yuhang Li, Youngeun Kim, Priyadarshini Panda
This review explores the intersection of bio-plausible artificial intelligence in the form of spiking neural networks (SNNs) with the analog in-memory computing (IMC) domain, highlighting their collective potential for low-power edge computing environments. Through detailed investigation at the device, circuit, and system levels, we highlight the pivotal synergies between SNNs and IMC architectures. Additionally, we emphasize the critical need for comprehensive system-level analyses, considering the inter-dependencies among algorithms, devices, circuit, and system parameters, crucial for optimal performance. An in-depth analysis leads to the identification of key system-level bottlenecks arising from device limitations, which can be addressed using SNN-specific algorithm–hardware co-design techniques. This review underscores the imperative for holistic device to system design-space co-exploration, highlighting the critical aspects of hardware and algorithm research endeavors for low-power neuromorphic solutions.
{"title":"When in-memory computing meets spiking neural networks—A perspective on device-circuit-system-and-algorithm co-design","authors":"Abhishek Moitra, Abhiroop Bhattacharjee, Yuhang Li, Youngeun Kim, Priyadarshini Panda","doi":"10.1063/5.0211040","DOIUrl":"https://doi.org/10.1063/5.0211040","url":null,"abstract":"This review explores the intersection of bio-plausible artificial intelligence in the form of spiking neural networks (SNNs) with the analog in-memory computing (IMC) domain, highlighting their collective potential for low-power edge computing environments. Through detailed investigation at the device, circuit, and system levels, we highlight the pivotal synergies between SNNs and IMC architectures. Additionally, we emphasize the critical need for comprehensive system-level analyses, considering the inter-dependencies among algorithms, devices, circuit, and system parameters, crucial for optimal performance. An in-depth analysis leads to the identification of key system-level bottlenecks arising from device limitations, which can be addressed using SNN-specific algorithm–hardware co-design techniques. This review underscores the imperative for holistic device to system design-space co-exploration, highlighting the critical aspects of hardware and algorithm research endeavors for low-power neuromorphic solutions.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"14 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142276761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the rapid fusion of temperature sensing technology and microwave technology, microwave temperature sensors have become the protagonist of competing research. We propose a planar resonator temperature sensor that combines substrate material modifications with sensor structure design. To realize this concept, high-performance TiO2-xwt. % ZnO (0 ≤ x ≤ 3) microwave dielectric ceramics are prepared. The various factors influencing dielectric properties, including crystal structure, phase composition, Raman vibration, microstructure, element valence, and oxygen vacancy, are completely investigated. The TiO2-0.7 wt. % ZnO ceramic exhibiting exceptional properties (εr = 106.6, Qf = 46 000 GHz, τf = 426.0 ppm/°C) is selected for substrate fabrication. The frequency and temperature dependence of εr and tan δ are analyzed at 2–4.5 GHz from −50 to 100 °C, revealing a good linearity between εr and temperature. A CSRR temperature sensor employing this substrate material is designed, simulated, fabricated, and validated from −50 to 90 °C. This sensor generates two resonance frequencies (around 0.5 and 1.4 GHz) in the UHF band, demonstrating sensitivities of 2.2 MHz/10 °C and 6.3 MHz/10 °C at the first and second resonance frequencies, along with an outstanding normalized sensitivity of approximately 0.045. Through a comprehensive analysis of the physical mechanisms affecting the sensor's sensitivity and quality factor, the design of the sensor is strengthened from the perspective of optimizing the performance of microwave dielectric ceramics. The regulation mechanism of dielectric characteristics is enriched and clarified, thereby achieving a synergistic improvement in sensor performance. This work expands the application scope of microwave dielectric ceramics and provides an innovative approach to environmental monitoring.
{"title":"An UHF band planar resonator temperature sensor constructed from high-performance titanium dioxide system microwave dielectric ceramics: Toward integrated ceramic-based sensor devices","authors":"Yaoxing Wang, Mingkun Du, Lingxia Li","doi":"10.1063/5.0218434","DOIUrl":"https://doi.org/10.1063/5.0218434","url":null,"abstract":"With the rapid fusion of temperature sensing technology and microwave technology, microwave temperature sensors have become the protagonist of competing research. We propose a planar resonator temperature sensor that combines substrate material modifications with sensor structure design. To realize this concept, high-performance TiO2-xwt. % ZnO (0 ≤ x ≤ 3) microwave dielectric ceramics are prepared. The various factors influencing dielectric properties, including crystal structure, phase composition, Raman vibration, microstructure, element valence, and oxygen vacancy, are completely investigated. The TiO2-0.7 wt. % ZnO ceramic exhibiting exceptional properties (εr = 106.6, Qf = 46 000 GHz, τf = 426.0 ppm/°C) is selected for substrate fabrication. The frequency and temperature dependence of εr and tan δ are analyzed at 2–4.5 GHz from −50 to 100 °C, revealing a good linearity between εr and temperature. A CSRR temperature sensor employing this substrate material is designed, simulated, fabricated, and validated from −50 to 90 °C. This sensor generates two resonance frequencies (around 0.5 and 1.4 GHz) in the UHF band, demonstrating sensitivities of 2.2 MHz/10 °C and 6.3 MHz/10 °C at the first and second resonance frequencies, along with an outstanding normalized sensitivity of approximately 0.045. Through a comprehensive analysis of the physical mechanisms affecting the sensor's sensitivity and quality factor, the design of the sensor is strengthened from the perspective of optimizing the performance of microwave dielectric ceramics. The regulation mechanism of dielectric characteristics is enriched and clarified, thereby achieving a synergistic improvement in sensor performance. This work expands the application scope of microwave dielectric ceramics and provides an innovative approach to environmental monitoring.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"12 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142245992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The scarcity of fuels, high pollution levels, climate change, and other major environmental issues are critical challenges that modern societies are facing, mostly originating from fossil fuels-based economies. These challenges can be addressed by developing green, eco-friendly, inexpensive energy sources and energy storage devices. Electrochemical energy storage materials possess high capacitance and superior power density. To engineer highly efficient next-generation electrochemical energy storage devices, the mechanisms of electrochemical reactions and redox behavior must be probed in operational environments. They can be studied by investigating atomic and electronic structures using in situ x-ray absorption spectroscopy (XAS) analysis. Such a technique has attracted substantial research and development interest in the field of energy science for over a decade. The mechanisms of charge/discharge, carrier transport, and ion intercalation/deintercalation can be elucidated. Supercapacitors generally store energy by two specific mechanisms—pseudocapacitance and electrochemical double-layer capacitance. In situ XAS is a powerful tool for probing and understanding these mechanisms. In this Review, both soft and hard x rays are used for the in situ XAS analysis of various representative electrochemical energy storage systems. This Review also showcases some of the highly efficient energy and power density candidates. Furthermore, the importance of synchrotron-based x-ray spectroscopy characterization techniques is enlightened. The impact of the electronic structure, local atomic structure, and electronically active elements/sites of the typical electrochemical energy storage candidates in operational conditions is elucidated. Regarding electrochemical energy storage mechanisms in their respective working environments, the unknown valence states and reversible/irreversible nature of elements, local hybridization, delocalized d-electrons spin states, participation of coordination shells, disorder, and faradaic/non-faradaic behavior are thoroughly discussed. Finally, the future direction of in situ XAS analysis combined with spatial chemical mapping from operando scanning transmission x-ray microscopy and other emerging characterization techniques is presented and discussed.
燃料稀缺、污染严重、气候变化和其他重大环境问题是现代社会面临的严峻挑战，而这些挑战大多源自以化石燃料为基础的经济。这些挑战可以通过开发绿色、环保、廉价的能源和储能设备来解决。电化学储能材料具有高电容和卓越的功率密度。要设计出高效的下一代电化学储能装置，就必须在工作环境中探究电化学反应和氧化还原行为的机理。可以通过使用原位 X 射线吸收光谱（XAS）分析来研究原子和电子结构。十多年来，这种技术在能源科学领域吸引了大量的研发兴趣。充放电、载流子传输和离子插层/脱插层的机制都可以得到阐明。超级电容器一般通过伪电容和电化学双层电容这两种特定机制储存能量。原位 XAS 是探测和了解这些机制的有力工具。在本综述中，软X射线和硬X射线都被用于对各种具有代表性的电化学储能系统进行原位XAS分析。本综述还展示了一些高效能量和功率密度的候选产品。此外，还介绍了基于同步辐射的 X 射线光谱表征技术的重要性。本综述阐明了典型电化学储能候选系统的电子结构、局部原子结构和电子活性元素/位点在运行条件下的影响。关于其各自工作环境中的电化学储能机制，深入讨论了未知价态和元素的可逆/不可逆性质、局部杂化、脱局域 d 电子自旋态、配位层的参与、无序以及远动能/非远动能行为。最后，介绍并讨论了原位 XAS 分析与操作扫描透射 X 射线显微镜的空间化学图谱及其他新兴表征技术相结合的未来发展方向。
{"title":"Energy storage chemistry: Atomic and electronic fundamental understanding insights for high-performance supercapacitors","authors":"Thanigai Arul Kumaravelu, Ramana Ramya Jayapalan, Han-Wei Chang, Asokan Kandasami, Lionel Vayssieres, Chung-Li Dong","doi":"10.1063/5.0203665","DOIUrl":"https://doi.org/10.1063/5.0203665","url":null,"abstract":"The scarcity of fuels, high pollution levels, climate change, and other major environmental issues are critical challenges that modern societies are facing, mostly originating from fossil fuels-based economies. These challenges can be addressed by developing green, eco-friendly, inexpensive energy sources and energy storage devices. Electrochemical energy storage materials possess high capacitance and superior power density. To engineer highly efficient next-generation electrochemical energy storage devices, the mechanisms of electrochemical reactions and redox behavior must be probed in operational environments. They can be studied by investigating atomic and electronic structures using in situ x-ray absorption spectroscopy (XAS) analysis. Such a technique has attracted substantial research and development interest in the field of energy science for over a decade. The mechanisms of charge/discharge, carrier transport, and ion intercalation/deintercalation can be elucidated. Supercapacitors generally store energy by two specific mechanisms—pseudocapacitance and electrochemical double-layer capacitance. In situ XAS is a powerful tool for probing and understanding these mechanisms. In this Review, both soft and hard x rays are used for the in situ XAS analysis of various representative electrochemical energy storage systems. This Review also showcases some of the highly efficient energy and power density candidates. Furthermore, the importance of synchrotron-based x-ray spectroscopy characterization techniques is enlightened. The impact of the electronic structure, local atomic structure, and electronically active elements/sites of the typical electrochemical energy storage candidates in operational conditions is elucidated. Regarding electrochemical energy storage mechanisms in their respective working environments, the unknown valence states and reversible/irreversible nature of elements, local hybridization, delocalized d-electrons spin states, participation of coordination shells, disorder, and faradaic/non-faradaic behavior are thoroughly discussed. Finally, the future direction of in situ XAS analysis combined with spatial chemical mapping from operando scanning transmission x-ray microscopy and other emerging characterization techniques is presented and discussed.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"33 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142236980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Emerging topological polar domains have a wide range of potential applications in electronic devices. It is critical to accurately manipulate these topological domains by electrical fields and explore their exotic properties for making more energy-efficient high-density non-volatile memories. Herein, we demonstrate that skyrmion-like polar nanodomains appear at room temperature in SrTiO3/PbTiO3 bilayer heterostructures by balancing the elastic and electrostatic energies via varying the SrTiO3 capping layer thickness. These polar nanodomains, stable at room temperature, can be electrically written, erased, and rewritten into the bilayer by applying an appropriate bias on the conductive tip of an atomic force microscope. The lateral size and location of these polar nanodomains can be precisely controlled. Moreover, ring-shaped conductive domain walls are observed around these polar nanodomains, with on/off ratios of more than two orders of magnitude with respect to the ferroelectric background. Based on these characteristics, the polar nanodomains can be created, erased, and probed electrically, suggesting applications for high-density ferroelectric hard disks.
{"title":"Highly tunable skyrmion-like polar nanodomains for high-density ferroelectric hard disks","authors":"Hongying Chen, Wenda Yang, Cheng Li, Peijie Jiao, Zhiyu Liu, Chuanjie Lin, Yaoyao Chen, Guo Tian, Yu Deng, Yuefeng Nie, Yongjun Wu, Jun-Ming Liu, Zijian Hong, Xingsen Gao, Di Wu","doi":"10.1063/5.0209179","DOIUrl":"https://doi.org/10.1063/5.0209179","url":null,"abstract":"Emerging topological polar domains have a wide range of potential applications in electronic devices. It is critical to accurately manipulate these topological domains by electrical fields and explore their exotic properties for making more energy-efficient high-density non-volatile memories. Herein, we demonstrate that skyrmion-like polar nanodomains appear at room temperature in SrTiO3/PbTiO3 bilayer heterostructures by balancing the elastic and electrostatic energies via varying the SrTiO3 capping layer thickness. These polar nanodomains, stable at room temperature, can be electrically written, erased, and rewritten into the bilayer by applying an appropriate bias on the conductive tip of an atomic force microscope. The lateral size and location of these polar nanodomains can be precisely controlled. Moreover, ring-shaped conductive domain walls are observed around these polar nanodomains, with on/off ratios of more than two orders of magnitude with respect to the ferroelectric background. Based on these characteristics, the polar nanodomains can be created, erased, and probed electrically, suggesting applications for high-density ferroelectric hard disks.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"189 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142236979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kazi Faridur Rahman, Shaili Falina, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Mohd Syamsul
It is only recently that the electric vehicle (EV) has evolved into a contemporary invention. There has been a rapid acceleration in the development of EVs in a number of nations in order to lessen their reliance on oil and their contribution to environmental pollution. In the tangible world, fully EVs do not release any carbon dioxide (CO2) emissions from their tailpipes, unlike any other conventional vehicles. This results in a 50%–70% CO2 reduction in air pollution per year. The achievement of electrification in transportation has led to a reduction in the weight and size of the vehicles as the need for internal combustion engines can be eliminated. Wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) offer advantages in the manufacturing of EVs. Beginning the late 2000s, the EV industry has begun to adopt GaN devices in their manufacturing processes. The semiconductor material GaN stands out as a material for power electronic systems in EVs owing to its high switching frequency, higher temperature limit, and high voltage breakdown. This review aims to provide a comprehensive overview of semiconductor GaN materials for EV applications, which could be useful to provide insights for researchers and scientists to accelerate their innovation for the improvement of EVs. This review begins with an introduction to EVs, followed by the anticipated demand for EVs. The application of GaN devices in EVs, compared to the traditional Si and SiC devices, which are the primary power devices in current EVs, is discussed. The recent advancement in GaN devices that are capable of being used in various components of a fully automated EV, such as the battery, energy storage system, auxiliary power unit, and motor drive, in addition to their use in different non-automotive vehicles such as electric aircraft, electric ships, electric railways, electric submarines, and heavy duty vehicles, is also discussed. Finally, the challenges posed by GaN devices and potential solutions to overcome these shortcomings have been addressed.
直到最近，电动汽车（EV）才发展成为当代发明。为了减少对石油的依赖和对环境的污染，一些国家迅速加快了电动汽车的发展。在有形世界中，与其他传统汽车不同，全电动汽车的尾气排放不释放任何二氧化碳（CO2）。因此，每年可减少 50%-70% 的二氧化碳空气污染。由于不再需要内燃机，交通实现电气化后，车辆的重量和体积都有所减小。碳化硅（SiC）和氮化镓（GaN）等宽带隙材料为电动汽车的制造提供了优势。从 2000 年代末开始，电动汽车行业已开始在其制造工艺中采用氮化镓器件。半导体材料氮化镓具有开关频率高、温度极限高和击穿电压高的特点，是电动汽车电力电子系统的理想材料。本综述旨在全面概述电动汽车应用中的半导体 GaN 材料，为研究人员和科学家提供有用的见解，以加快他们的创新，改进电动汽车。本综述首先介绍了电动汽车，然后介绍了电动汽车的预期需求。与传统的硅和碳化硅器件相比，氮化镓器件是目前电动汽车的主要功率器件，本文将讨论氮化镓器件在电动汽车中的应用。此外，还讨论了 GaN 器件的最新进展，这些器件可用于全自动电动汽车的各种组件，如电池、储能系统、辅助动力装置和电机驱动，还可用于不同的非汽车车辆，如电动飞机、电动船舶、电动铁路、电动潜艇和重型车辆。最后，还讨论了氮化镓器件面临的挑战以及克服这些缺点的潜在解决方案。
{"title":"The role of gallium nitride in the evolution of electric vehicles: Energy applications, technology, and challenges","authors":"Kazi Faridur Rahman, Shaili Falina, Mohamed Fauzi Packeer Mohamed, Hiroshi Kawarada, Mohd Syamsul","doi":"10.1063/5.0215799","DOIUrl":"https://doi.org/10.1063/5.0215799","url":null,"abstract":"It is only recently that the electric vehicle (EV) has evolved into a contemporary invention. There has been a rapid acceleration in the development of EVs in a number of nations in order to lessen their reliance on oil and their contribution to environmental pollution. In the tangible world, fully EVs do not release any carbon dioxide (CO2) emissions from their tailpipes, unlike any other conventional vehicles. This results in a 50%–70% CO2 reduction in air pollution per year. The achievement of electrification in transportation has led to a reduction in the weight and size of the vehicles as the need for internal combustion engines can be eliminated. Wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN) offer advantages in the manufacturing of EVs. Beginning the late 2000s, the EV industry has begun to adopt GaN devices in their manufacturing processes. The semiconductor material GaN stands out as a material for power electronic systems in EVs owing to its high switching frequency, higher temperature limit, and high voltage breakdown. This review aims to provide a comprehensive overview of semiconductor GaN materials for EV applications, which could be useful to provide insights for researchers and scientists to accelerate their innovation for the improvement of EVs. This review begins with an introduction to EVs, followed by the anticipated demand for EVs. The application of GaN devices in EVs, compared to the traditional Si and SiC devices, which are the primary power devices in current EVs, is discussed. The recent advancement in GaN devices that are capable of being used in various components of a fully automated EV, such as the battery, energy storage system, auxiliary power unit, and motor drive, in addition to their use in different non-automotive vehicles such as electric aircraft, electric ships, electric railways, electric submarines, and heavy duty vehicles, is also discussed. Finally, the challenges posed by GaN devices and potential solutions to overcome these shortcomings have been addressed.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"10 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142171412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kyung Ho Kim, Yejin Kim, Sung Eun Seo, Chul Soon Park, Jinyoung Kim, Yu Kyung Kim, Hyoung-il Kim, Yoo Min Park, Oh Seok Kwon
Interfacial chemicals for metal surface functionalization were developed for applications of high water dispersibility and environmental stability. Metal nanomaterials, i.e., gold nanoparticles (AuNPs), were synthesized by introducing various interfacial chemicals, to improve the hydrophilicity of biosensors, such as those used in fluorescence resonance energy transfer (FRET) and lateral flow assay (LFA), respectively. Previously, thiolated AuNPs (SH-AuNPs) exhibited colloidal instability by forming irreversible aggregates in extreme environmental conditions; this phenomenon led to limitations such as poor sensitivity and reproducibility, in terms of biosensor application fields. Therefore, the development of novel interfacial chemicals remained a challenge for AuNP-based biosensor applications. Here, we first synthesized and demonstrated an ultra-stable AuNP functionalization by introducing N-heterocyclic carbene (NHC) compounds with a polyethylene glycol chain and azide terminal groups (NHC-AuNPs). The high binding energy of NHC-AuNPs compared with SH-AuNPs was demonstrated by density functional theory simulation, with NHC-AuNPs showing an unprecedented stability in extreme environmental conditions with varying ranges of pH, salts, and temperature; in particular, ultra-stability was observed in condition by freezing/thawing over 120 times. NHC-AuNPs were applied FRET and LFA biosensors and showed excellent sensing performances. Based on the results, NHC-AuNPs can be introduced for performance improvement in the development of diagnostic platforms to utilize in extreme environmental conditions.
{"title":"Ultra-stable gold nanoparticles based on N-heterocyclic carbene interfacial compound","authors":"Kyung Ho Kim, Yejin Kim, Sung Eun Seo, Chul Soon Park, Jinyoung Kim, Yu Kyung Kim, Hyoung-il Kim, Yoo Min Park, Oh Seok Kwon","doi":"10.1063/5.0210703","DOIUrl":"https://doi.org/10.1063/5.0210703","url":null,"abstract":"Interfacial chemicals for metal surface functionalization were developed for applications of high water dispersibility and environmental stability. Metal nanomaterials, i.e., gold nanoparticles (AuNPs), were synthesized by introducing various interfacial chemicals, to improve the hydrophilicity of biosensors, such as those used in fluorescence resonance energy transfer (FRET) and lateral flow assay (LFA), respectively. Previously, thiolated AuNPs (SH-AuNPs) exhibited colloidal instability by forming irreversible aggregates in extreme environmental conditions; this phenomenon led to limitations such as poor sensitivity and reproducibility, in terms of biosensor application fields. Therefore, the development of novel interfacial chemicals remained a challenge for AuNP-based biosensor applications. Here, we first synthesized and demonstrated an ultra-stable AuNP functionalization by introducing N-heterocyclic carbene (NHC) compounds with a polyethylene glycol chain and azide terminal groups (NHC-AuNPs). The high binding energy of NHC-AuNPs compared with SH-AuNPs was demonstrated by density functional theory simulation, with NHC-AuNPs showing an unprecedented stability in extreme environmental conditions with varying ranges of pH, salts, and temperature; in particular, ultra-stability was observed in condition by freezing/thawing over 120 times. NHC-AuNPs were applied FRET and LFA biosensors and showed excellent sensing performances. Based on the results, NHC-AuNPs can be introduced for performance improvement in the development of diagnostic platforms to utilize in extreme environmental conditions.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"15 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142171411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yubin Fan, Shufan Chen, Xiaoyuan Liu, Xiaoyu Che, Xiaodong Qiu, Mu Ku Chen, Din Ping Tsai
Quantum random number generation (QRNG) leveraging intrinsic quantum uncertainty has attracted significant interest in the field of integrated photonic architecture, with applications in quantum cryptography, tests of quantum nonlocality, and beyond. The demand for compact, low-energy consumption, robust, fast, and cost-effective QRNGs integrated into photonic chips is highlighted, whereas most previous works focused on bulk optics. Here, based on the metalens array entangled source, we experimentally realized a miniaturized, high-dimensional quantum random number generator via a meta-device without post-randomness extraction. Specifically, the device has a high-density output with 100 channels per square millimeter. This chip-scale quantum randomness source can obtain random number arrays without post-randomness extraction and enable compact integration for quantum applications needing secure keys or randomness. Our approach demonstrates potential in secure key generation and randomness for quantum applications.
{"title":"Metalens array for quantum random number","authors":"Yubin Fan, Shufan Chen, Xiaoyuan Liu, Xiaoyu Che, Xiaodong Qiu, Mu Ku Chen, Din Ping Tsai","doi":"10.1063/5.0224766","DOIUrl":"https://doi.org/10.1063/5.0224766","url":null,"abstract":"Quantum random number generation (QRNG) leveraging intrinsic quantum uncertainty has attracted significant interest in the field of integrated photonic architecture, with applications in quantum cryptography, tests of quantum nonlocality, and beyond. The demand for compact, low-energy consumption, robust, fast, and cost-effective QRNGs integrated into photonic chips is highlighted, whereas most previous works focused on bulk optics. Here, based on the metalens array entangled source, we experimentally realized a miniaturized, high-dimensional quantum random number generator via a meta-device without post-randomness extraction. Specifically, the device has a high-density output with 100 channels per square millimeter. This chip-scale quantum randomness source can obtain random number arrays without post-randomness extraction and enable compact integration for quantum applications needing secure keys or randomness. Our approach demonstrates potential in secure key generation and randomness for quantum applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"9 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142166361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The phase diagram serves as a blueprint for designing the structure of a material, offering a comprehensive representation of its different phases under specific conditions, such as temperature and pressure. In the realm of two-dimensional (2D) materials, stacking order can play a crucial role in controlling and inducing phase transitions. However, in studying phase diagrams for 2D materials, the exploration of stacking degree of freedom has largely been overlooked, limiting our understanding and hindering future applications. Here, we experimentally explore the interplay of stacking and pressure degrees of freedom in revealing unique phase transitions in bilayer MoS2 with two different stacking configurations. In AA stacking, interlayer sliding and asymmetric intralayer compressing precede intralayer rotation, while in AB stacking, asymmetric intralayer compressing and intralayer distortion occur simultaneously. Under further elevated pressure, the bilayer system transitions into 1T′ phase before amorphization. Our findings offer valuable insights for creating comprehensive phase diagrams and exploring exotic phases as well as phase transitions of 2D materials in a broader parameter space.
相图是设计材料结构的蓝图，全面展示了材料在温度和压力等特定条件下的不同相态。在二维（2D）材料领域，堆积顺序在控制和诱导相变方面起着至关重要的作用。然而，在研究二维材料相图的过程中，对堆积自由度的探索在很大程度上被忽视了，这限制了我们的理解并阻碍了未来的应用。在这里，我们通过实验探索了堆叠自由度和压力自由度的相互作用，揭示了具有两种不同堆叠构型的双层 MoS2 的独特相变。在 AA 堆垛中，层间滑动和非对称层内压缩先于层内旋转，而在 AB 堆垛中，非对称层内压缩和层内扭曲同时发生。在压力进一步升高的情况下，双层体系会在非晶化之前过渡到 1T′ 相。我们的发现为绘制全面的相图、探索二维材料在更广阔的参数空间中的奇异相位和相变提供了宝贵的见解。
{"title":"Exploration toward a new stacking-pressure phase diagram in bilayer AA- and AB-MoS2","authors":"Chenyin Jiao, Shenghai Pei, Zejuan Zhang, Cheng Li, Jiankai Zhu, Jiaze Qin, Maodi Zhang, Ting Wen, Yu Zhou, Zenghui Wang, Juan Xia","doi":"10.1063/5.0202832","DOIUrl":"https://doi.org/10.1063/5.0202832","url":null,"abstract":"The phase diagram serves as a blueprint for designing the structure of a material, offering a comprehensive representation of its different phases under specific conditions, such as temperature and pressure. In the realm of two-dimensional (2D) materials, stacking order can play a crucial role in controlling and inducing phase transitions. However, in studying phase diagrams for 2D materials, the exploration of stacking degree of freedom has largely been overlooked, limiting our understanding and hindering future applications. Here, we experimentally explore the interplay of stacking and pressure degrees of freedom in revealing unique phase transitions in bilayer MoS2 with two different stacking configurations. In AA stacking, interlayer sliding and asymmetric intralayer compressing precede intralayer rotation, while in AB stacking, asymmetric intralayer compressing and intralayer distortion occur simultaneously. Under further elevated pressure, the bilayer system transitions into 1T′ phase before amorphization. Our findings offer valuable insights for creating comprehensive phase diagrams and exploring exotic phases as well as phase transitions of 2D materials in a broader parameter space.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"6 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142144436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yang Liu, Lang Bian, Rui Zhang, Jinhui Fan, Da Huo, Bingzhong Shen, Houbing Huang, Xiaoming Shi, Dawei Wang, Kui Yao
The progress of next-generation electromechanical devices is substantially reliant upon achieving high electromechanical coupling performance in piezoelectric materials. Here, a local stress regulation strategy is introduced to significantly enhance the overall electromechanical response of lead-free piezoceramics. A remarkable large piezoelectric coefficient (d33) of ∼800 pC N−1 and longitudinal electromechanical coupling factor (k33) of 88% are obtained in (K,Na)NbO3 (KNN)-based textured piezoceramics. From both experimental examinations and theoretical simulation, including phase-field analyses, it is found that the improved piezoelectric performance primarily stems from the stress-induced elastic field aligned with the preferred crystallographic orientation, which constrains the domain size, resulting in nanoscale short-range ordered domain structures. Such structures facilitate the flexible rotation of electric dipoles within coexisting phases due to flattened free energy distribution, thereby leading to the exceptionally large piezoelectric response. This understanding provides valuable guidance for the design of novel lead-free piezoceramics with excellent piezoelectric performance.
下一代机电设备的发展在很大程度上取决于压电材料能否实现较高的机电耦合性能。本文引入了一种局部应力调节策略，以显著增强无铅压电陶瓷的整体机电响应。在以（K,Na）NbO3（KNN）为基材的纹理压电陶瓷中，压电系数（d33）达到了惊人的 800 pC N-1，纵向机电耦合系数（k33）达到了 88%。通过实验检测和理论模拟（包括相场分析）发现，压电性能的提高主要源于应力诱导的弹性场与优选晶体学取向一致，从而限制了畴尺寸，形成了纳米级短程有序畴结构。由于自由能分布扁平化，这种结构有利于共存相内电偶极子的灵活旋转，从而产生超大的压电响应。这一认识为设计具有优异压电性能的新型无铅压电陶瓷提供了宝贵的指导。
{"title":"Ultrahigh electromechanical response in (K,Na)NbO3-based lead-free textured piezoceramics","authors":"Yang Liu, Lang Bian, Rui Zhang, Jinhui Fan, Da Huo, Bingzhong Shen, Houbing Huang, Xiaoming Shi, Dawei Wang, Kui Yao","doi":"10.1063/5.0224215","DOIUrl":"https://doi.org/10.1063/5.0224215","url":null,"abstract":"The progress of next-generation electromechanical devices is substantially reliant upon achieving high electromechanical coupling performance in piezoelectric materials. Here, a local stress regulation strategy is introduced to significantly enhance the overall electromechanical response of lead-free piezoceramics. A remarkable large piezoelectric coefficient (d33) of ∼800 pC N−1 and longitudinal electromechanical coupling factor (k33) of 88% are obtained in (K,Na)NbO3 (KNN)-based textured piezoceramics. From both experimental examinations and theoretical simulation, including phase-field analyses, it is found that the improved piezoelectric performance primarily stems from the stress-induced elastic field aligned with the preferred crystallographic orientation, which constrains the domain size, resulting in nanoscale short-range ordered domain structures. Such structures facilitate the flexible rotation of electric dipoles within coexisting phases due to flattened free energy distribution, thereby leading to the exceptionally large piezoelectric response. This understanding provides valuable guidance for the design of novel lead-free piezoceramics with excellent piezoelectric performance.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"310 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have examined the case of light atom (B, N) doped and co-doped graphitic films grown on copper for the anode-free Li Metal Battery (AFLMB) application. For nitrogen doping, the depositions were carried out by laser ablating pure graphite (Gr) in the presence of Nitrogen (N2) or Ammonia (NH3). In another interesting case, 5 wt. % Boron nitride (BN) was added into the graphite target itself to obtain BN-doped graphite films. It was found that the growth condition mediated film constitution and properties significantly influence the Coulombic efficiency and cycling stability of the cells when tested for AFLMB. The cycle life demonstrated by the cells of pure graphitic film (Gr) was only about 110 cycles, while the N-doped graphite films obtained using N2 gas (N2–Gr) exhibited stability up to about 300 cycles. Interestingly the N-doped films obtained using NH3 gas (NH3–Gr) exhibited a stability of 715 cycles and B, N co-doped graphite (BN–Gr) film resulted in an even longer cycle life of 795 cycles. Density functional theory calculations were also performed to deeply understand the interaction and binding energy of Lithium within the undoped and doped graphene sheets modeled through the addition of light elements. It was found that the binding of Li is stronger in the (B, N) co-doped graphene as compared to the N-doped graphene and undoped graphene but much weaker than the B-doped graphene. Therefore, an improved lateral Li diffusion in the (B, N) co-doped graphene is observed where the Li binding strength is optimum resulting in better cycling stability.
我们研究了在铜上生长的轻原子（B、N）掺杂和共掺杂石墨薄膜，用于无阳极金属锂电池（AFLMB）。对于氮掺杂，是在氮气（N2）或氨气（NH3）存在下通过激光烧蚀纯石墨（Gr）来实现沉积的。另一个有趣的例子是，在石墨靶材中加入 5 重量百分比的氮化硼（BN），以获得掺杂 BN 的石墨薄膜。研究发现，在进行 AFLMB 测试时，生长条件介导的薄膜构成和特性会显著影响电池的库仑效率和循环稳定性。纯石墨薄膜（Gr）电池的循环寿命仅为 110 次左右，而使用 N2 气体获得的 N-掺杂石墨薄膜（N2-Gr）的稳定性可达 300 次左右。有趣的是，使用 NH3 气体（NH3-Gr）获得的掺 N 薄膜显示出 715 次循环的稳定性，而 B、N 共掺石墨（BN-Gr）薄膜的循环寿命更长，达到 795 次循环。为了深入了解锂在未掺杂和掺杂石墨烯片中的相互作用和结合能，我们还通过添加轻元素进行了密度泛函理论计算。结果发现，与掺杂 N 的石墨烯和未掺杂的石墨烯相比，锂在（B，N）共掺杂石墨烯中的结合力更强，但比掺杂 B 的石墨烯弱得多。因此，(B，N) 共掺杂石墨烯中的锂横向扩散得到了改善，锂结合强度达到最佳，从而获得更好的循环稳定性。
{"title":"Light element (B, N) co-doped graphitic films on copper as highly robust current collectors for anode-free Li metal battery applications","authors":"Rhushikesh Godbole, Shweta Hiwase, Mujaffar Hossain, Supriya Kadam, Minal Wable, Sunit Rane, Sukanta Mondal, Bidisa Das, Abhik Banerjee, Satishchandra Ogale","doi":"10.1063/5.0208785","DOIUrl":"https://doi.org/10.1063/5.0208785","url":null,"abstract":"We have examined the case of light atom (B, N) doped and co-doped graphitic films grown on copper for the anode-free Li Metal Battery (AFLMB) application. For nitrogen doping, the depositions were carried out by laser ablating pure graphite (Gr) in the presence of Nitrogen (N2) or Ammonia (NH3). In another interesting case, 5 wt. % Boron nitride (BN) was added into the graphite target itself to obtain BN-doped graphite films. It was found that the growth condition mediated film constitution and properties significantly influence the Coulombic efficiency and cycling stability of the cells when tested for AFLMB. The cycle life demonstrated by the cells of pure graphitic film (Gr) was only about 110 cycles, while the N-doped graphite films obtained using N2 gas (N2–Gr) exhibited stability up to about 300 cycles. Interestingly the N-doped films obtained using NH3 gas (NH3–Gr) exhibited a stability of 715 cycles and B, N co-doped graphite (BN–Gr) film resulted in an even longer cycle life of 795 cycles. Density functional theory calculations were also performed to deeply understand the interaction and binding energy of Lithium within the undoped and doped graphene sheets modeled through the addition of light elements. It was found that the binding of Li is stronger in the (B, N) co-doped graphene as compared to the N-doped graphene and undoped graphene but much weaker than the B-doped graphene. Therefore, an improved lateral Li diffusion in the (B, N) co-doped graphene is observed where the Li binding strength is optimum resulting in better cycling stability.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"48 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2024-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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