The partial Pb2+ substitution with Cu+ ions has been thoroughly applied as an approach to produce new absorber materials with enhanced light and radiation hardness required for potential aerospace applications of perovskite solar cells. X-ray photoelectron spectroscopy revealed that Cu+ ions are partially integrated into the crystal lattice of MAPbI3 on the surface of perovskite grains and induce p-doping effect, which is crucial for a range of applications. Importantly, the presence of Cu+ enhances photostability of perovskite films and blocks the formation of metallic lead as a photolysis product. Furthermore, we have carried out one of the first studies on the radiation hardness of complex lead halides exposed to two different stressors: γ-rays and 8.5 MeV electron beams. The obtained results demonstrate that Cu+ doping alters completely the radiation-induced degradation pathways of the double cation perovskite. Indeed, while Cs0.12FA0.88PbI3 degrades mostly with segregation of δ-phase of FAPbI3 forming a Cs-rich perovskite phase, the Cs0.12FA0.88Pb0.99Cu0.01I2.99 films tend to expel δ-CsPbI3 and produce FA-rich perovskite phase, which shows impressive tolerance to both γ-rays and high energy electrons. The beneficial effect of copper ion incorporation on the stability of lead halide perovskite solar cells under light soaking and γ-ray irradiation conditions has been shown. The discovered possibility of controlling the electronic properties and major materials degradation pathways through minor modification of their chemical composition (e.g., replacing 1% of Pb2+ with Cu+) opens up tremendous opportunities for engineering new perovskite absorber compositions with significantly improved properties for both terrestrial and aerospace applications.