Pub Date : 2024-01-22DOI: 10.1109/OJIA.2024.3353309
Xingxuan Huang;Dingrui Li;Min Lin;Leon M. Tolbert;Fred Wang;William Giewont
This article presents a desat protection scheme with the ultrafast response for high-voltage (>3.3 kV) SiC MOSFETs. Its working principle is the same as the conventional desat protection designed for high-voltage SiC MOSFETs, yet its blanking time is implemented by fully considering the influence of high negative dvds/dt