Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698884
O. Maurice, J. Pigneret
The functional susceptibility of electronic circuits to radio-radar-type bursts is controlled by two factors: the energy coupling and propagation on interconnecting elements, cables and PCB's tracks on one hand, the intrinsic susceptibility of ICs, on the other hand. This paper addresses the problem of the upset threshold measurement in modern digital circuits stressed by conducted out-of-band signals. The results establish and quantify the variability associated with the injection circuit, the packaging and its interface with the PCB, the excitation shape and its position in the functional time sequence. An optimized characterization method is proposed to collect reproducible and useful data.
{"title":"Digital circuit susceptibility characterization to RF and microwave disturbances","authors":"O. Maurice, J. Pigneret","doi":"10.1109/RADECS.1997.698884","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698884","url":null,"abstract":"The functional susceptibility of electronic circuits to radio-radar-type bursts is controlled by two factors: the energy coupling and propagation on interconnecting elements, cables and PCB's tracks on one hand, the intrinsic susceptibility of ICs, on the other hand. This paper addresses the problem of the upset threshold measurement in modern digital circuits stressed by conducted out-of-band signals. The results establish and quantify the variability associated with the injection circuit, the packaging and its interface with the PCB, the excitation shape and its position in the functional time sequence. An optimized characterization method is proposed to collect reproducible and useful data.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114519808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698888
O. Flament, O. Musseau, J. Leray, E. Dutisseuil, T. Corbiere
This work concerns the development of a radiation hardness assurance methodology specially devoted to CMOS, JFET and bipolar transistors used in high total dose level environments. On the basis of recent studies, high temperature, high dose rate irradiations were performed. We propose a test procedure which combines high temperature irradiations and isochronal anneals for the qualification.
{"title":"Ionizing dose hardness assurance methodology for qualification of a BiCMOS technology dedicated to high dose level applications","authors":"O. Flament, O. Musseau, J. Leray, E. Dutisseuil, T. Corbiere","doi":"10.1109/RADECS.1997.698888","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698888","url":null,"abstract":"This work concerns the development of a radiation hardness assurance methodology specially devoted to CMOS, JFET and bipolar transistors used in high total dose level environments. On the basis of recent studies, high temperature, high dose rate irradiations were performed. We propose a test procedure which combines high temperature irradiations and isochronal anneals for the qualification.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"245 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121674126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698865
K. Matsuzaki, N. Nemoto, E. Nakamura, T. Akutsu, S. Matsuda, K. Yajima, H. Sasaki, M. Komaru, T. Katoh, T. Kashiwa, T. Asano, K. Mizuguchi
The effects of Co-60 /spl gamma/-ray irradiation under DC operation for two types of monolithic microwave integrated circuits (MMICs), Pseudomorphic HEMT (PHEMT) and Dual-Gate GaAs MES-FET, were investigated. These two types of MMICs have an excellent radiation hardness exceeding 10/sup 7/ rad(Si). We considered that degradation mechanisms of P-HEMT and MES-FET were the decrease of two dimensional electron gas (2DEG) carrier density and increase of electron traps near the Schottky gate electrode.
{"title":"Radiation hardness of pseudomorphic HEMT and dual-gate GaAs MES-FET MMICs","authors":"K. Matsuzaki, N. Nemoto, E. Nakamura, T. Akutsu, S. Matsuda, K. Yajima, H. Sasaki, M. Komaru, T. Katoh, T. Kashiwa, T. Asano, K. Mizuguchi","doi":"10.1109/RADECS.1997.698865","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698865","url":null,"abstract":"The effects of Co-60 /spl gamma/-ray irradiation under DC operation for two types of monolithic microwave integrated circuits (MMICs), Pseudomorphic HEMT (PHEMT) and Dual-Gate GaAs MES-FET, were investigated. These two types of MMICs have an excellent radiation hardness exceeding 10/sup 7/ rad(Si). We considered that degradation mechanisms of P-HEMT and MES-FET were the decrease of two dimensional electron gas (2DEG) carrier density and increase of electron traps near the Schottky gate electrode.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129363008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698878
V. Belyakov, G. Zebrev, I. N. Shvetzov-Shilovsky, R. G. Useinov
The postirradiation response of the MOSFET's transconductance and logarithmic slope has been studied as a function of measurement temperatures. It is found that the temperature dependence of the postirradiation change in transconductance cannot be accounted for by the occurrence of additional scattering centers. These results suggest that mainly an additional recharging through the radiation-induced interface traps rather than a change in microscopic mobility determine the postirradiation variation of transconductance. An analysis of the effect and a convenient procedure for parameter extraction are presented.
{"title":"Radiation response of MOSFET's parameters as a function of measurement temperature","authors":"V. Belyakov, G. Zebrev, I. N. Shvetzov-Shilovsky, R. G. Useinov","doi":"10.1109/RADECS.1997.698878","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698878","url":null,"abstract":"The postirradiation response of the MOSFET's transconductance and logarithmic slope has been studied as a function of measurement temperatures. It is found that the temperature dependence of the postirradiation change in transconductance cannot be accounted for by the occurrence of additional scattering centers. These results suggest that mainly an additional recharging through the radiation-induced interface traps rather than a change in microscopic mobility determine the postirradiation variation of transconductance. An analysis of the effect and a convenient procedure for parameter extraction are presented.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128563450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698895
L. Bonora, J. David, M. Calvet, R. Ecoffet, C. Barillot, P. Calvel
In this paper, are investigated the influences of experimental parameters such as dose rate, irradiation temperature and base-emitter bias upon the degradation of elementary NPN and lateral PNP transistors. Very low dose rate results (3 mrad(Si)/s) are included and compared with several sets of experimental conditions for high dose rate irradiations. A specific configuration, combining an elevated temperature and a moderate reverse bias applied to the emitter-base junction, was found to be reasonably consistent with the room-temperature, low dose-rate response.
{"title":"Comparison of elementary bipolar transistor degradations: Dose rate and combined experimental parameters effects","authors":"L. Bonora, J. David, M. Calvet, R. Ecoffet, C. Barillot, P. Calvel","doi":"10.1109/RADECS.1997.698895","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698895","url":null,"abstract":"In this paper, are investigated the influences of experimental parameters such as dose rate, irradiation temperature and base-emitter bias upon the degradation of elementary NPN and lateral PNP transistors. Very low dose rate results (3 mrad(Si)/s) are included and compared with several sets of experimental conditions for high dose rate irradiations. A specific configuration, combining an elevated temperature and a moderate reverse bias applied to the emitter-base junction, was found to be reasonably consistent with the room-temperature, low dose-rate response.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124709762","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698976
S. Semjonov, M. Bubnov, N.B. Kurinov, A.G. Schebuniaev
Silica fibres protected by different coatings were tested under /spl gamma/-irradiation (1.7 MGy (Si)). In contrast to the previous works the samples were irradiated both in air and in distilled water to observe whether there is a combined effect of /spl gamma/-rays and water. New types of protective coatings-namely, hermetic metal coatings (Al and Sn) were tested for the first time. A set of coatings which might be used under /spl gamma/-irradiation in combination with other possible harsh factors was characterised.
{"title":"Stability of mechanical properties of silica based optical fibres under /spl gamma/-radiation","authors":"S. Semjonov, M. Bubnov, N.B. Kurinov, A.G. Schebuniaev","doi":"10.1109/RADECS.1997.698976","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698976","url":null,"abstract":"Silica fibres protected by different coatings were tested under /spl gamma/-irradiation (1.7 MGy (Si)). In contrast to the previous works the samples were irradiated both in air and in distilled water to observe whether there is a combined effect of /spl gamma/-rays and water. New types of protective coatings-namely, hermetic metal coatings (Al and Sn) were tested for the first time. A set of coatings which might be used under /spl gamma/-irradiation in combination with other possible harsh factors was characterised.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128383568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698840
M. Shaneyfelt, J. Schwank, D. Fleetwood, P. Winokur
Effects of irradiation and annealing temperature on radiation-induced charge trapping are explored for MOS transistors. Transistors were irradiated with 10-keV x rays at temperatures from -25 to 100/spl deg/C and annealed at 100/spl deg/C for times up to 3.6/spl times/10/sup 6/ s. Transistor data were analyzed for the contributions of radiation-induced charge due to oxide traps, border traps, and interface traps. Increased irradiation temperature resulted in increased interface-trap and border-trap buildup and decreased oxide-trapped charge buildup during irradiation. Interface-trap buildup immediately following irradiation for transistors irradiated at 100/spl deg/C was equivalent to the buildup of interface traps in transistors irradiated at 27/spl deg/C and annealed for one week at 100/spl deg/C (standard rebound test). For the p-channel transistors, a one-to-one correlation was observed between the increase in interface-trap charge and the decrease in oxide-trapped charge during irradiation. This may imply a link between increased interface-trap buildup and the annealing of oxide-trapped charge in these devices. The observed data can be explained in terms of increased hydrogen ion transport rates to the Si/SiO/sub 2/ interface during elevated temperature irradiations. These results have implications on hardness assurance testing and potentially may be used to reduce costs associated with rebound qualification.
{"title":"Effects of irradiation temperature on MOS radiation response","authors":"M. Shaneyfelt, J. Schwank, D. Fleetwood, P. Winokur","doi":"10.1109/RADECS.1997.698840","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698840","url":null,"abstract":"Effects of irradiation and annealing temperature on radiation-induced charge trapping are explored for MOS transistors. Transistors were irradiated with 10-keV x rays at temperatures from -25 to 100/spl deg/C and annealed at 100/spl deg/C for times up to 3.6/spl times/10/sup 6/ s. Transistor data were analyzed for the contributions of radiation-induced charge due to oxide traps, border traps, and interface traps. Increased irradiation temperature resulted in increased interface-trap and border-trap buildup and decreased oxide-trapped charge buildup during irradiation. Interface-trap buildup immediately following irradiation for transistors irradiated at 100/spl deg/C was equivalent to the buildup of interface traps in transistors irradiated at 27/spl deg/C and annealed for one week at 100/spl deg/C (standard rebound test). For the p-channel transistors, a one-to-one correlation was observed between the increase in interface-trap charge and the decrease in oxide-trapped charge during irradiation. This may imply a link between increased interface-trap buildup and the annealing of oxide-trapped charge in these devices. The observed data can be explained in terms of increased hydrogen ion transport rates to the Si/SiO/sub 2/ interface during elevated temperature irradiations. These results have implications on hardness assurance testing and potentially may be used to reduce costs associated with rebound qualification.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131819153","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698974
B. Siebert, H. Henschel
The dose of fast neutrons in optical fibres with hydrogen-containing coating materials is considerably increased by energetic recoil protons. Their contribution to the dose in a SiO/sub 2/ fibre core is calculated by the Monte Carlo method for different fibre geometries and a fibre optic cable. With 14 MeV neutrons the dose in a single fibre is increased by about 21%, whereas in fibre bundles the dose increase can reach about 170%. Maximum dose enhancement in fibre bundles (about 610%) occurs at neutron energies around 5.5 MeV. The dose increase caused by 14 MeV neutrons in the fibre of a typical laboratory cable is about 124%.
{"title":"Calculation of fast neutron dose in plastic-coated optical fibres","authors":"B. Siebert, H. Henschel","doi":"10.1109/RADECS.1997.698974","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698974","url":null,"abstract":"The dose of fast neutrons in optical fibres with hydrogen-containing coating materials is considerably increased by energetic recoil protons. Their contribution to the dose in a SiO/sub 2/ fibre core is calculated by the Monte Carlo method for different fibre geometries and a fibre optic cable. With 14 MeV neutrons the dose in a single fibre is increased by about 21%, whereas in fibre bundles the dose increase can reach about 170%. Maximum dose enhancement in fibre bundles (about 610%) occurs at neutron energies around 5.5 MeV. The dose increase caused by 14 MeV neutrons in the fibre of a typical laboratory cable is about 124%.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"555 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134425146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698932
D. McMorrow, J. Melinger, A. Knudson, S. Buchner, L. Tran, A. Campbell, W. Curtice
The charge-collection processes of GaAs field-effect transistors are investigated as a function of the incident laser pulse energy via time-resolved charge-collection measurements and by two-dimensional computer simulation. The measurements and simulations reveal a feature that persists on a time scale of 100 ps, the amplitude of which varies strongly with the injected carrier density (pulse energy). The appearance of this feature is associated with a barrier lowering effect at the source/substrate junction, coupled with the drift-assisted transport of electrons through the substrate to the drain contact. This behavior is similar, but not identical to bipolar-gain models that have been suggested previously. We introduce the concept of ion-track segments and illustrate their utility in interrogating the complex mechanisms of charge collection and enhancement in GaAs FETs.
{"title":"Charge-enhancement mechanisms of GaAs field-effect transistors: experiment and simulation","authors":"D. McMorrow, J. Melinger, A. Knudson, S. Buchner, L. Tran, A. Campbell, W. Curtice","doi":"10.1109/RADECS.1997.698932","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698932","url":null,"abstract":"The charge-collection processes of GaAs field-effect transistors are investigated as a function of the incident laser pulse energy via time-resolved charge-collection measurements and by two-dimensional computer simulation. The measurements and simulations reveal a feature that persists on a time scale of 100 ps, the amplitude of which varies strongly with the injected carrier density (pulse energy). The appearance of this feature is associated with a barrier lowering effect at the source/substrate junction, coupled with the drift-assisted transport of electrons through the substrate to the drain contact. This behavior is similar, but not identical to bipolar-gain models that have been suggested previously. We introduce the concept of ion-track segments and illustrate their utility in interrogating the complex mechanisms of charge collection and enhancement in GaAs FETs.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133999546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698866
J. Ahn, W. T. Holman, peixiong zhao, K. Galloway, D. A. Bryant, P. Calvel, M. Calvet
This paper introduces a methodology for using standard commercial processes to design analog integrated circuits that can tolerate the adverse effects of ionizing radiation. First, several devices of various types and sizes were exposed to ionizing radiation and characterized under worst-case biasing conditions with dose rates and maximum total doses as stipulated in circuit specifications. Second, a determination was made as to what types of devices and circuit topologies were best suited for a desired application, given worst-case component parameters. Finally, taking into account the circuit specifications and the expected shifts in device performance, the circuit was designed, simulated, fabricated, and tested. This paper focuses on the design example of a radiation-tolerant 6-bit R-2R ladder digital-to-analog converter (DAC) in a commercial 2.0-/spl mu/m BiCMOS process.
{"title":"Design issues for a radiation-tolerant digital-to-analog converter in a commercial 2.0-/spl mu/m BiCMOS process","authors":"J. Ahn, W. T. Holman, peixiong zhao, K. Galloway, D. A. Bryant, P. Calvel, M. Calvet","doi":"10.1109/RADECS.1997.698866","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698866","url":null,"abstract":"This paper introduces a methodology for using standard commercial processes to design analog integrated circuits that can tolerate the adverse effects of ionizing radiation. First, several devices of various types and sizes were exposed to ionizing radiation and characterized under worst-case biasing conditions with dose rates and maximum total doses as stipulated in circuit specifications. Second, a determination was made as to what types of devices and circuit topologies were best suited for a desired application, given worst-case component parameters. Finally, taking into account the circuit specifications and the expected shifts in device performance, the circuit was designed, simulated, fabricated, and tested. This paper focuses on the design example of a radiation-tolerant 6-bit R-2R ladder digital-to-analog converter (DAC) in a commercial 2.0-/spl mu/m BiCMOS process.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127868289","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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